TWI535876B - 導電膜形成用銀合金濺鍍靶及其製造方法 - Google Patents
導電膜形成用銀合金濺鍍靶及其製造方法 Download PDFInfo
- Publication number
- TWI535876B TWI535876B TW101116355A TW101116355A TWI535876B TW I535876 B TWI535876 B TW I535876B TW 101116355 A TW101116355 A TW 101116355A TW 101116355 A TW101116355 A TW 101116355A TW I535876 B TWI535876 B TW I535876B
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- target
- silver alloy
- particle diameter
- conductive film
- Prior art date
Links
- 229910001316 Ag alloy Inorganic materials 0.000 title claims description 65
- 238000005477 sputtering target Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 18
- 239000013078 crystal Substances 0.000 claims description 63
- 239000002245 particle Substances 0.000 claims description 54
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 38
- 229910052718 tin Inorganic materials 0.000 claims description 38
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 34
- 229910052709 silver Inorganic materials 0.000 claims description 34
- 239000004332 silver Substances 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 30
- 238000005096 rolling process Methods 0.000 claims description 30
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 26
- 229910052733 gallium Inorganic materials 0.000 claims description 26
- 239000006185 dispersion Substances 0.000 claims description 17
- 230000009467 reduction Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 14
- 238000003490 calendering Methods 0.000 claims description 13
- 238000005266 casting Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 238000005098 hot rolling Methods 0.000 claims description 7
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 84
- 238000004544 sputter deposition Methods 0.000 description 42
- 238000005401 electroluminescence Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 16
- 230000002159 abnormal effect Effects 0.000 description 14
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 238000003754 machining Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001018 Cast iron Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011362 coarse particle Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000015784 hyperosmotic salinity response Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012005053A JP5159963B1 (ja) | 2012-01-13 | 2012-01-13 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201329263A TW201329263A (zh) | 2013-07-16 |
| TWI535876B true TWI535876B (zh) | 2016-06-01 |
Family
ID=48013558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101116355A TWI535876B (zh) | 2012-01-13 | 2012-05-08 | 導電膜形成用銀合金濺鍍靶及其製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5159963B1 (ja) |
| KR (1) | KR101854009B1 (ja) |
| CN (1) | CN103958727B (ja) |
| TW (1) | TWI535876B (ja) |
| WO (1) | WO2013105285A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5472353B2 (ja) * | 2012-03-27 | 2014-04-16 | 三菱マテリアル株式会社 | 銀系円筒ターゲット及びその製造方法 |
| DE102012006718B3 (de) | 2012-04-04 | 2013-07-18 | Heraeus Materials Technology Gmbh & Co. Kg | Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben |
| JP5590258B2 (ja) * | 2013-01-23 | 2014-09-17 | 三菱マテリアル株式会社 | Ａｇ合金膜形成用スパッタリングターゲットおよびＡｇ合金膜、Ａｇ合金反射膜、Ａｇ合金導電膜、Ａｇ合金半透過膜 |
| JP2015079739A (ja) * | 2013-09-13 | 2015-04-23 | 三菱マテリアル株式会社 | 有機ｅｌ用反射電極膜、積層反射電極膜、及び、反射電極膜形成用スパッタリングターゲット |
| JP6172230B2 (ja) | 2014-09-18 | 2017-08-02 | 三菱マテリアル株式会社 | Ａｇ合金スパッタリングターゲット、Ａｇ合金膜およびＡｇ合金膜の製造方法 |
| EP3168325B1 (de) * | 2015-11-10 | 2022-01-05 | Materion Advanced Materials Germany GmbH | Sputtertarget auf der basis einer silberlegierung |
| JP2018176493A (ja) * | 2017-04-07 | 2018-11-15 | 三菱マテリアル株式会社 | 積層膜、及び、Ａｇ合金スパッタリングターゲット |
| KR20210070264A (ko) * | 2018-10-03 | 2021-06-14 | 미쓰비시 마테리알 가부시키가이샤 | 적층막, 및 Ag 합금 스퍼터링 타깃 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4801279B2 (ja) * | 2001-05-09 | 2011-10-26 | 石福金属興業株式会社 | スパッタリングターゲット材 |
| JP2004002929A (ja) * | 2001-08-03 | 2004-01-08 | Furuya Kinzoku:Kk | 銀合金、スパッタリングターゲット、反射型ｌｃｄ用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス |
| JP3765540B2 (ja) * | 2003-01-14 | 2006-04-12 | 田中貴金属工業株式会社 | 光記録媒体の反射膜用の銀合金 |
| DE10327336A1 (de) * | 2003-06-16 | 2005-01-27 | W. C. Heraeus Gmbh & Co. Kg | Legierung und deren Verwendung |
| JP4384453B2 (ja) * | 2003-07-16 | 2009-12-16 | 株式会社神戸製鋼所 | Ａｇ系スパッタリングターゲット及びその製造方法 |
| JP4309227B2 (ja) * | 2003-10-16 | 2009-08-05 | 石福金属興業株式会社 | スパッタリングターゲット材 |
| JP4569863B2 (ja) * | 2004-04-27 | 2010-10-27 | 日立金属株式会社 | Ａｇ合金スパッタリングターゲット材およびＡｇ合金膜 |
| JP3907666B2 (ja) * | 2004-07-15 | 2007-04-18 | 株式会社神戸製鋼所 | レーザーマーキング用再生専用光情報記録媒体 |
| CN102652182B (zh) * | 2009-12-22 | 2014-06-18 | 三菱伸铜株式会社 | 纯铜板的制造方法及纯铜板 |
| JP5533545B2 (ja) * | 2010-01-12 | 2014-06-25 | 三菱マテリアル株式会社 | 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法 |
-
2012
- 2012-01-13 JP JP2012005053A patent/JP5159963B1/ja not_active Expired - Fee Related
- 2012-05-08 TW TW101116355A patent/TWI535876B/zh not_active IP Right Cessation
- 2012-05-09 KR KR1020147013670A patent/KR101854009B1/ko active IP Right Grant
- 2012-05-09 WO PCT/JP2012/061872 patent/WO2013105285A1/ja active Application Filing
- 2012-05-09 CN CN201280058004.4A patent/CN103958727B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101854009B1 (ko) | 2018-05-02 |
| WO2013105285A1 (ja) | 2013-07-18 |
| CN103958727B (zh) | 2016-03-16 |
| TW201329263A (zh) | 2013-07-16 |
| CN103958727A (zh) | 2014-07-30 |
| KR20140113634A (ko) | 2014-09-24 |
| JP5159963B1 (ja) | 2013-03-13 |
| JP2013144823A (ja) | 2013-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |