TWI533466B - Light-emitting element and method for manufacturing the same - Google Patents

Description

Light-emitting element and manufacturing method thereof

The invention provides a light-emitting element and a manufacturing method thereof, which are mainly used in a light-emitting element group, and an insulating layer extends from a transparent conductive layer and a reflective layer to at least an N-type gallium nitride layer to ensure a dispensing process. Avoiding the connection of silver glue to PN, reducing the crisis of short circuit, and arranging the N electrode and the P electrode in the same side to be arranged on the same side, so as to simplify the implementation of the related components of the light emitting element in the fabrication, and the flip chip package, and the light emitting element The effective light-transmissive region can be surely lifted, and the non-isotropic etching of the N-type gallium nitride layer therebetween increases the adhesion of the insulating layer to the required thickness to prevent the occurrence of a short circuit, so that the light emitting diode (Light Emitting) Diode, LED) yield improvement.

According to the existing form of a gallium nitride (GaN) light-emitting diode (LED) composition (as shown in the first figure), the light-emitting diode 60 is included on a substrate 10 combined with a N a gallium nitride layer (N-GaN) 20, and a multi-layer quantum well (MQWS) 30 bonded to an N-type gallium nitride layer (N-GaN) 20, followed by bonding on the uppermost quantum well (MQWS) 30 a P-type gallium nitride layer (P-GaN) 40, after which a transparent light-emitting layer 50 is bonded to the P-type gallium nitride layer (P-GaN) 40, and an N-type gallium nitride layer (N- GaN) 20 and P-type gallium nitride layer (P-GaN) 40 are removed by etching so that a portion of the exposed N-type gallium nitride layer (N-GaN) 20 is exposed in the N-type gallium nitride. The layer (N-GaN) 20 is provided with a negative electrode 201, and between the P-type gallium nitride layer (P-GaN) 40 and the transparent conductive layer 50, a positive electrode 401 is provided, and the positive electrode 401 and the transparent electrode are provided. Between the conductive layers 50 and between the N-type gallium nitride layer (N-GaN) 20 and the negative electrode 201, a protective layer is bonded 402, 202.

The substrate 10 in the above-mentioned light-emitting diode 60 is made of sapphire so as to be incapable of conducting electricity, so the positive and negative electrodes 401 and 201 must be disposed in a light emitting diode (LED). The action of 60 is positive (ie, the positive electrode 401 is disposed on the front surface of the P-type gallium nitride layer (P-GaN) 40, and the negative electrode 201 is disposed on the front surface of the N-GaN layer 20]; The morphological composition is such that the surface of the P-GaN 40 is etched to the N-GaN layer 20 during the Light Emitting Diode (LED) 60. The etched trench must have a sufficient width to provide a negative electrode 201 on the surface of the N-GaN layer 20 by wire bonding. Therefore, the portion of the light-emitting region that is preliminarily caused by the multilayer quantum well (MQWS) 30 is etched away so as to affect the light-emitting region of the light-emitting diode 60. Further, since the substrate 10 made of sapphire has poor thermal conductivity, the performance of the Light Emitting Diode (LED) 60 is also lowered.

The invention is specifically improved according to the existing loss of the existing light-emitting diode, so as to extend the insulating layer from the transparent conductive layer and the reflective layer to at least the N-type gallium nitride in the light-emitting element group. Layer to ensure that the silver (Ag) glue is connected to the PN during the dispensing process, reducing the risk of short circuit, and the N electrode and the P electrode are arranged on the same side to simplify the assembly of related components of the light emitting element in the fabrication. Implementation, and flip chip packaging, and the effective light-emitting area of the light-emitting element can be surely improved, and the non-isotropic etching of the N-type gallium nitride layer therebetween increases the adhesion of the insulating layer to the required thickness In order to prevent the occurrence of a short circuit, the yield of the light-emitting diode (LED) is improved.

The main object of the present invention is to include a U-GaN layer and an N-type gallium nitride layer (N-) which are slanted on both sides of a substrate. GaN), and in a pre-set paragraph of an N-GaN layer combined with a multilayer quantum well (MQWS), a P-type gallium nitride layer is additionally bonded over the multilayer quantum well (MQWS) (P- GaN), and a transparent conductive layer and a reflective layer are bonded on the P-type gallium nitride layer (P-GaN), and the transparent conductive layer and the reflective layer are overlaid on the insulating layer by a predetermined thickness and extended to at least N-type gallium nitride layer (N-GaN), or extended to the junction of U-GaN layer (U-GaN) and substrate, and P-type gallium nitride layer (P-GaN) and multilayer quantum The well (MQWS) is coated and insulated with an N-type gallium nitride layer (N-GaN) to ensure that the silver paste (Ag) is connected to the PN during the dispensing process, thereby reducing the risk of short circuit, and further on both sides of the insulating layer. The device is formed with a plurality of through holes, and materials such as chromium (Cr) and aluminum (Al) may be used to conduct the N electrode and the P electrode above the insulating layer for subsequent processing of the dispensing and the support; and the N electrode is correspondingly The through hole is formed with an N-type gallium nitride layer (N-GaN) N contacts the electrode, and the P electrode forms a P contact electrode through the corresponding transparent hole with a transparent conductive layer and a reflective layer, a P-type gallium nitride layer (P-GaN), and an N-type gallium nitride layer (N-GaN) After the P-GaN layer is electrically connected to the multilayer quantum well (MQWS), the light generated by the multilayer quantum well (MQWS) is reflected by the reflective layer, and the refractive principle is transmitted through all directions. Launched everywhere.

A second object of the present invention is to fabricate a light-emitting device by using a U-GaN layer and a N-type gallium nitride bonded over a substrate. The layer (N-GaN) is formed by an anisotropic etching method to form a slanted upper side layer, and is sequentially connected in a predetermined step of the N-GaN layer to be slightly inclined. Multilayer quantum wells (MQWS), P-type gallium nitride layers (P-GaN), and transparent conductive layers and reflective layers, followed by layers along the transparent conductive and reflective layers, and P-type gallium nitride layers ( P-GaN) and both sides of the multilayer quantum well (MQWS) extend at least to the N-type gallium nitride layer (N-GaN), or extend to the junction of the U-GaN layer and the substrate. In order to cover a predetermined thickness of the insulating layer, the insulating layer can be tilted on both sides of the N-GaN layer to obtain the sufficient thickness and easy to reach the required thickness. .

A third object of the present invention is to provide an N-electrode and a P-electrode above the insulating layer of the light-emitting element, and the N-electrode and the P-electrode are arranged on the same side, thereby simplifying the implementation of the related components of the light-emitting element in the fabrication. And the flip chip package, the brightness of the light emitting diode (LED) is improved, and the area of the other N electrode and the P electrode is extended to facilitate the adhesion of the solid crystal package.

The illuminating element designed by the present invention and the manufacturing method thereof (such as the second to sixth figures) are included in the illuminating element 9: a U-shaped gallium nitride layer (U- slanted on both sides of the substrate 1) GaN) 21 and N-type gallium nitride layer (N-GaN) 2, and in a pre-set paragraph of N-GaN layer 2 combined with a multilayer quantum well (MQWS) 3, in the multilayer quantum well (MQWS) 3 is additionally combined with a P-type gallium nitride layer (P-GaN) 4, and a P-type gallium nitride layer (P-GaN) 4 is bonded with a transparent conductive layer [material used such as: ITO , GZO, etc. and the reflective layer 5 [materials used such as: Al, Ag, DBR, etc.] The insulating layer 6 of a predetermined thickness [the material used, such as: bismuth telluride, etc.] is overlaid on the transparent conductive layer and the reflective layer 5, and extends at least to the N-GaN layer 2 (eg, Three diagrams], or extending to the junction of the U-GaN layer (U-GaN) and the substrate (as shown in the fifth figure), and the P-type gallium nitride layer (P-GaN) 4 and the multilayer quantum well (MQWS) 3 is coated, and a plurality of through holes 61 and 62 are formed at predetermined positions on both sides of the insulating layer 6, and N electrodes 7 and P electrodes 8 are respectively combined on both sides of the insulating layer 6 and The plurality of through holes 61, 62 of the corresponding portions are electrically connected to the N electrode 7 and the P electrode 8 by using a material such as chromium (Cr) or aluminum (Al), and the N electrode 7 is passed through the corresponding through hole 61 and the N-type gallium nitride layer (N). -GaN) 2 forms an N contact electrode 71, and the P electrode 8 forms a P contact electrode 81 through the corresponding through hole 62 to form a P contact contact with the transparent conductive layer and the reflective layer 5, the P-type gallium nitride layer (P-GaN) 4. The N-type GaN layer (N-GaN) 2 and the P-type gallium nitride layer (P-GaN) 4 are electrically connected to the multilayer quantum well (MQWS) 3 to conduct a multilayer quantum well (MQWS). 3 The generated light is reflected by the reflective layer and is emitted from all sides by the principle of refraction in all directions. [Mostly an emission direction of the substrate].

The light-emitting element 9 (such as the second, third, fifth, and sixth figures) designed in the present invention is produced by: U-type gallium nitride layer (U-GaN) 21 and N-type nitride which are bonded above the substrate 1. The gallium layer (N-GaN) 2 is formed by etching to form a slanted upper side layer, and is sequentially connected in a predetermined step of the N-GaN layer 2 to be slightly inclined. Multilayer quantum well (MQWS) 3, P-type gallium nitride layer (P-GaN) 4, and a transparent conductive layer and reflective layer 5, and then along the action layer of the transparent conductive layer and the reflective layer 5, and P-type a gallium nitride layer (P-GaN) 4 and a plurality of quantum wells (MQWS) 3 are extended to at least an N-type gallium nitride layer (N-GaN) 2 [as shown in the third figure Or extending to the junction of the U-GaN layer (U-GaN) and the substrate (as shown in the fifth figure), is to cover a predetermined thickness of the insulating layer 6, so that the insulating layer 6 can borrow N The two sides formed by the type of gallium nitride layer (N-GaN) 2 are inclined to the upper layer to obtain sufficient thickness to easily reach the required thickness, and the preset portions on both sides of the insulating layer 6 are reserved for each of the plurality of layers. The holes 61, 62 are electrically connected to the N electrode 7 and the P electrode 8 by using a material such as chromium (Cr) or aluminum (Al), and a non-contact region 91 must be maintained between the N electrode 7 and the P electrode 8 to reach a predetermined thickness. The insulating layer 6 prevents the N-type gallium nitride layer (N-GaN) 2 from coming into contact with the P-type gallium nitride layer (P-GaN) 4, and the silver (Ag) gel in the dispensing process leads to the short circuit. And thus will yield low yields.

The light-emitting element of the above composition has the following advantages in implementation:

1. The light-emitting element is extended in the form of a strip, so that the N-electrode and the P-electrode are disposed on both sides of the insulating layer, and a non-contact area is easily formed.

2. The N-type gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) between the light-emitting elements are kept in a space that is completely separated by the insulating layer to avoid silver during the dispensing process. (Ag) glue is in contact at the same time, resulting in low yield.

3. The light-emitting element group can be arranged on the same side as the N-electrode and the P-electrode, so as to simplify the implementation of the related components of the light-emitting element in the fabrication and the flip-chip package.

4. The light-emitting element group can use the materials of chromium (Cr), aluminum (Al) and the like to conduct the N-electrode and the P-electrode by using a plurality of through-holes reserved, and the amount of the through-holes can be used to adjust the current.

5. The area of the light-emitting element group can extend the length of the adhesion by the N electrode and the P electrode to facilitate the adhesion of the adhesion during the solid crystal, so as to increase the fixation degree of the support. The thermal conductivity and yield of the LED are improved.

[study]

10‧‧‧Substrate

20‧‧‧N-type gallium nitride layer

201‧‧‧Negative electrode

202, 402‧‧‧ protective layer

30‧‧‧Quantum Well

40‧‧‧P-type gallium nitride layer

401‧‧‧ positive electrode

50‧‧‧ tin oxide layer

60‧‧‧Lighting diode

〔this invention〕

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

First figure: A schematic cross-sectional view of a light-emitting element.

Second drawing: a schematic top view of a light-emitting element of the invention.

Third figure: A-A cross-sectional view of the second figure (the insulating layer reaches the N-GAN layer, and the N electrode and the P electrode extend to the N-GAN layer).

Fourth: A schematic plan view of the light-emitting element of the present invention without the N electrode and the P electrode.

Fig. 5 is a cross-sectional view showing another preferred embodiment of the light-emitting element of the present invention (the insulating layer extends up to the U-GAN layer).

Fig. 6(a) is a view showing an implementation state (1) of the N electrode and the P electrode of the light-emitting element of the present invention.

Fig. 6(b) is a view showing an implementation state of the N electrode and the P electrode of the light-emitting element of the present invention (2).

Fig. 6(c) is a view showing an implementation state (3) of the N electrode and the P electrode of the light-emitting element of the present invention.

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

Claims (1)

A light-emitting device is produced by: an N-type gallium nitride layer (N-GaN) bonded on a substrate is formed by etching to form a sloped upper side layer and in an N-type gallium nitride layer. The pre-set paragraph of (N-GaN) is sequentially combined with a slightly slanted U-shaped gallium nitride layer, a multilayer quantum well (MQWS), a P-type gallium nitride layer (P-GaN), a transparent conductive layer, and a reflection. a layer, then, along the active layer of the transparent conductive layer and the reflective layer, and both the P-type gallium nitride layer (P-GaN) and the multilayer quantum well (MQWS) and extend to the N-type gallium nitride layer (N- The interface between the GaN and the substrate is covered with a predetermined thickness of the insulating layer, so that the insulating layer can be tilted on both sides of the N-GaN layer to obtain the covering force. Easy to achieve the required thickness, the predetermined portions on both sides of the insulating layer are reserved for a plurality of through holes, and the N electrode and the P electrode are turned on by using materials such as chromium (Cr) or aluminum (Al), wherein the N electrode and the N electrode are The P electrodes are in the same layer and arranged on the same side, and the number of through holes is used to adjust the current; as a reworking of dispensing, for the stent, and the N electrode is in the corresponding through hole and the N type The gallium layer (N-GaN) forms an N contact electrode, and the P electrode forms a P contact electrode through the corresponding transparent via transparent conductive layer and reflective layer, P-type gallium nitride layer (P-GaN), and borrows N The gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) are electrically connected to the multilayer quantum well (MQWS) to pass light generated by the multilayer quantum well (MQWS) through the reflective layer. The reflection is emitted from all sides by the principle of refraction in all directions.