TW201434175A - Light-emitting element and method for manufacturing the same - Google Patents

Abstract

The present invention provides a light-emitting element and a method for manufacturing the same. The light-emitting element includes: a substrate; a U-shaped gallium nitride layer (U-GaN) disposed on the substrate; an N-shaped gallium nitride layer (N-GaN) disposed on the U-shaped gallium nitride layer (U-GaN); multiple quantum wells (MQWS) disposed on the N-shaped gallium nitride layer (N-GaN); a P-shaped gallium nitride layer (P-GaN) disposed on the multiple quantum wells (MQWS) and then coupled to a transparent conductive layer and a reflective layer in sequence, wherein an insulating layer encloses the transparent conductive layer and the reflective layer, the P-shaped gallium nitride layer (P-GaN), and the multiple quantum wells (MQWS) and at least extends to the N-shaped gallium nitride layer (N-GaN), wherein a plurality of vias flanks the insulating layer to form a P contact electrode with the P-shaped gallium nitride layer (P-GaN) and form an N co! ntact electrode with the N-shaped gallium nitride layer (N-GaN). Hence, the light-emitting element extended in rectangular configuration features increased light-emitting area, enhanced heat dissipation, and optimization of wafer dicing.

Description

Light-emitting element and manufacturing method thereof

The invention provides a light-emitting element and a manufacturing method thereof, which are mainly used in a light-emitting element group, and an insulating layer extends from a transparent conductive layer and a reflective layer to at least an N-type gallium nitride layer to ensure a dispensing process. Avoiding the connection of silver glue to PN, reducing the crisis of short circuit, and arranging the N electrode and the P electrode in the same side to be arranged on the same side, so as to simplify the implementation of the related components of the light emitting element in the fabrication, and the flip chip package, and the light emitting element The effective light-transmissive region can be surely lifted, and the non-isotropic etching of the N-type gallium nitride layer therebetween increases the adhesion of the insulating layer to the required thickness to prevent the occurrence of a short circuit, so that the light emitting diode (Light Emitting) Diode, LED) yield improvement.

According to the existing form of a gallium nitride (GaN) light emitting diode (LED) composition (as shown in the first figure), the light emitting diode 60 is included on a substrate 10 combined with an N-type nitrogen a gallium layer (N-GaN) 20, and a multi-layer quantum well (MQWS) 30 bonded to an N-type gallium nitride layer (N-GaN) 20, followed by a P layer on the uppermost quantum well (MQWS) 30 a gallium nitride layer (P-GaN) 40, after which a transparent light-emitting layer 50 is bonded to the P-type gallium nitride layer (P-GaN) 40, and an N-type gallium nitride layer (N-GaN) is incorporated therein. 20 and P-type gallium nitride layer (P-GaN) 40 are removed by etching to expose a portion of the N-type gallium nitride layer (N-GaN) 20 in the exposed N-type gallium nitride layer ( The N-GaN 20 is provided with a negative electrode 201, and between the P-GaN layer 40 and the transparent conductive layer 50, a positive electrode 401 is provided, and the positive electrode 401 and the transparent conductive layer are provided. Between 50, and between the N-type gallium nitride layer (N-GaN) 20 and the negative electrode 201, a protective layer 402, 202 is bonded.

The substrate 10 in the above-mentioned light-emitting diode 60 is made of sapphire so as to be incapable of conducting electricity, so the positive and negative electrodes 401 and 201 must be disposed in the light emitting diode (LED) 60. The positive electrode 401 is disposed on the front surface of the P-type gallium nitride layer (P-GaN) 40, and the negative electrode 201 is disposed on the front surface of the N-GaN layer 20; The composition is such that the surface of the P-GaN 40 is etched to N during the Light Emitting Diode (LED) 60 a gallium nitride layer (N-GaN) 20, and the through-etched trench must have a sufficient width to be provided with a negative electrode 201 on the surface of the N-GaN layer 20 by wire bonding. . Therefore, the portion of the light-emitting region that is preliminarily caused by the multilayer quantum well (MQWS) 30 is etched away so as to affect the light-emitting region of the light-emitting diode 60. Further, since the substrate 10 made of sapphire has poor thermal conductivity, the performance of the Light Emitting Diode (LED) 60 is also lowered.

The invention is specifically improved according to the existing loss of the existing light-emitting diode, so as to extend the insulating layer from the transparent conductive layer and the reflective layer to at least the N-type gallium nitride in the light-emitting element group. Layer to ensure that the silver (Ag) glue is connected to the PN during the dispensing process, reducing the risk of short circuit, and the N electrode and the P electrode are arranged on the same side to simplify the assembly of related components of the light emitting element in the fabrication. Implementation, and flip chip packaging, and the effective light-emitting area of the light-emitting element can be surely improved, and the non-isotropic etching of the N-type gallium nitride layer therebetween increases the adhesion of the insulating layer to the required thickness to prevent short circuit This has led to an increase in the yield of Light Emitting Diodes (LEDs).

The main object of the present invention is to include a U-GaN layer and an N-type gallium nitride layer (N-) which are slanted on both sides of a substrate. GaN), and in a pre-set paragraph of an N-GaN layer combined with a multilayer quantum well (MQWS), a P-type gallium nitride layer is additionally bonded over the multilayer quantum well (MQWS) (P- GaN), and a transparent conductive layer and a reflective layer are bonded on the P-type gallium nitride layer (P-GaN), and the transparent conductive layer and the reflective layer are overlaid on the insulating layer by a predetermined thickness and extended to at least N-type gallium nitride layer (N-GaN), or extended to the junction of U-GaN layer (U-GaN) and substrate, and P-type gallium nitride layer (P-GaN) and multilayer quantum The well (MQWS) is coated and insulated with an N-type gallium nitride layer (N-GaN) to ensure that the silver paste (Ag) is connected to the PN during the dispensing process, thereby reducing the risk of short circuit, and further on both sides of the insulating layer. The device is formed with a plurality of through holes, and materials such as chromium (Cr) and aluminum (Al) may be used to conduct the N electrode and the P electrode above the insulating layer for subsequent processing of the dispensing and the support; and the N electrode is correspondingly The through hole is formed with an N-type gallium nitride layer (N-GaN) N contacts the electrode, and the P electrode forms a P contact electrode through the corresponding transparent hole with a transparent conductive layer and a reflective layer, a P-type gallium nitride layer (P-GaN), and an N-type gallium nitride layer (N-GaN) After the conductive connection with the P-type gallium nitride layer (P-GaN) and the multilayer quantum well (MQWS), to generate the multilayer quantum well (MQWS) Light is reflected from the reflective layer and emitted from all sides through the principle of refraction.

A second object of the present invention is to fabricate a light-emitting device by using a U-GaN layer and an N-GaN layer bonded over the substrate. An isotropic etching method to form a slanted upper side layer, and sequentially combined with a slightly inclined upper multi-layer quantum well (MQWS), P-type nitrogen in a preset section of an N-GaN layer (N-GaN) a gallium layer (P-GaN), a transparent conductive layer and a reflective layer, followed by a layer along the transparent conductive layer and the reflective layer, and a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS) ) extending at least to the N-type gallium nitride layer (N-GaN), or extending to the junction of the U-GaN layer and the substrate, preferably covering a predetermined thickness of the insulating layer The insulating layer can be tilted on both sides of the N-GaN layer to form the layer, and the covering force is sufficient to easily reach the required thickness.

A third object of the present invention is to provide an N-electrode and a P-electrode above the insulating layer of the light-emitting element, and the N-electrode and the P-electrode are arranged on the same side, thereby simplifying the implementation of the related components of the light-emitting element in the fabrication. And the flip chip package, the brightness of the light emitting diode (LED) is improved, and the area of the other N electrode and the P electrode is extended to facilitate the adhesion of the solid crystal package.

[study]

10‧‧‧Substrate

20‧‧‧N-type gallium nitride layer

201‧‧‧Negative electrode

202, 402‧‧‧ protective layer

30‧‧‧Quantum Well

40‧‧‧P-type gallium nitride layer

401‧‧‧ positive electrode

50‧‧‧Indium tin oxide layer

60‧‧‧Lighting diode

〔this invention〕

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

First figure: A schematic cross-sectional view of a light-emitting element.

Second drawing: a schematic top view of a light-emitting element of the invention.

Third figure: A-A cross-sectional view of the second figure (the insulating layer reaches the N-GAN layer, and the N electrode and the P electrode extend to the N-GAN layer).

Fourth: A schematic plan view of the light-emitting element of the present invention without the N electrode and the P electrode.

Fig. 5 is a cross-sectional view showing another preferred embodiment of the light-emitting element of the present invention (the insulating layer extends up to the U-GAN layer).

Fig. 6(a) is a view showing an implementation state (1) of the N electrode and the P electrode of the light-emitting element of the present invention.

Fig. 6(b) is a view showing an implementation state of the N electrode and the P electrode of the light-emitting element of the present invention (2).

Fig. 6(c) is a view showing an implementation state (3) of the N electrode and the P electrode of the light-emitting element of the present invention.

The illuminating element designed by the present invention and the manufacturing method thereof (such as the second to sixth figures) are included in the illuminating element 9: a U-shaped gallium nitride layer (U- slanted on both sides of the substrate 1) GaN) 21 and N-type gallium nitride layer (N-GaN) 2, and in a pre-set paragraph of N-GaN layer 2 combined with a multilayer quantum well (MQWS) 3, in the multilayer quantum well (MQWS) 3 is additionally combined with a P-type gallium nitride layer (P-GaN) 4, and a P-type gallium nitride layer (P-GaN) 4 is bonded with a transparent conductive layer [material used such as: ITO , GZO, etc. and the reflective layer 5 [materials used such as: Al, Ag, DBR, etc.] are coated on the transparent conductive layer 6 by a predetermined thickness of the insulating layer 6 [material used such as: cerium oxide, etc.] The layer and the reflective layer 5 extend at least to the N-type gallium nitride layer (N-GaN) 2 [as shown in the third figure] or extend to the junction of the U-GaN layer (U-GaN) and the substrate. [Fig. 5], a P-type gallium nitride layer (P-GaN) 4 and a multilayer quantum well (MQWS) 3 are coated, and a plurality of through holes 61 are formed at predetermined positions on both sides of the insulating layer 6. , 62, and on both sides of the insulating layer 6 are combined with the N electrode 7 and the P electrode 8, and The plurality of through holes 61, 62 of the corresponding portions are electrically connected to the N electrode 7 and the P electrode 8 by using a material such as chromium (Cr) or aluminum (Al), and the N electrode 7 is passed through the corresponding through hole 61 and the N-type gallium nitride layer (N). -GaN) 2 forms an N contact electrode 71, and the P electrode 8 forms a P contact electrode 81 through the corresponding through hole 62 to form a P contact contact with the transparent conductive layer and the reflective layer 5, the P-type gallium nitride layer (P-GaN) 4. The N-type GaN layer (N-GaN) 2 and the P-type gallium nitride layer (P-GaN) 4 are electrically connected to the multilayer quantum well (MQWS) 3 to conduct a multilayer quantum well (MQWS). 3 The generated light is reflected by the reflective layer and emitted from all sides by the principle of refraction (mostly emitted from the substrate direction).

The light-emitting element 9 (such as the second, third, fifth, and sixth figures) designed in the present invention is produced by: U-type gallium nitride layer (U-GaN) 21 and N-type nitride which are bonded above the substrate 1. The gallium layer (N-GaN) 2 is formed by etching to form a slanted upper side layer, and is sequentially connected in a predetermined step of the N-GaN layer 2 to be slightly inclined. Multilayer quantum well (MQWS) 3, P-type gallium nitride layer (P-GaN) 4, and a transparent conductive layer and reflective layer 5, and then along the action layer of the transparent conductive layer and the reflective layer 5, and P-type a gallium nitride layer (P-GaN) 4 and a plurality of quantum wells (MQWS) 3 are extended to at least an N-type gallium nitride layer (N-GaN) 2 [as shown in the third figure] or extended to U-type nitride The junction of the gallium layer (U-GaN) and the substrate is better (as shown in the fifth figure), and the insulating layer 6 of a predetermined thickness is coated so that the insulating layer 6 can pass the N-GaN layer (N-GaN). ) 2 formed on both sides of the slope and the upper layer to obtain sufficient covering power to easily achieve the required The thickness of the predetermined portion of the insulating layer 6 is a predetermined number of through holes 61, 62. The N electrode 7 and the P electrode 8 are electrically connected by using materials such as chromium (Cr) or aluminum (Al), and the N electrodes 7 and P are provided. A non-contact area 91 must be maintained between the electrodes 8, and the insulating layer 6 of a predetermined thickness can avoid the occurrence of the N-type GaN layer (N-GaN) 2 and the P-type GaN layer (P-GaN) 4 Contact, and the silver (Ag) glue in the dispensing process leads to a short circuit, which will result in low yield.

The light-emitting element of the above composition has the following advantages in implementation:

1. The light-emitting element is extended in the form of a strip, so that the N-electrode and the P-electrode are disposed on both sides of the insulating layer, and a non-contact area is easily formed.

2. The N-type gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) between the light-emitting elements are kept in a space that is completely separated by the insulating layer to avoid the process of dispensing. Silver (Ag) glue is in contact at the same time, resulting in low yield.

3. The light-emitting element group can be arranged on the same side as the N-electrode and the P-electrode, so as to simplify the implementation of the related components of the light-emitting element in the fabrication and the flip-chip package.

4. The light-emitting element group can use the materials of chromium (Cr), aluminum (Al) and the like to conduct the N-electrode and the P-electrode by using a plurality of through-holes reserved, and the amount of the through-holes can be used to adjust the current.

5. The area of the light-emitting element group can extend the adhesion degree of the N-electrode and the P-electrode to facilitate the adhesion of the adhesion when the crystal is fixed, so as to increase the fixing degree of the support, and contribute to the improvement of the thermal conductivity and the yield of the LED.

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

Claims (5)

A light-emitting element comprising: a U-GaN layer and an N-type gallium nitride layer (N-GaN) which are slanted on both sides of a substrate, and N-type nitrided The pre-set paragraph of the gallium layer (N-GaN) is combined with a multi-layer quantum well (MQWS), and a P-type gallium nitride layer (P-GaN) is bonded over the multi-layer quantum well (MQWS), while P-type nitridation is performed. The gallium layer (P-GaN) is bonded with a transparent conductive layer and a reflective layer; and is characterized in that: a predetermined thickness of the insulating layer is overlaid on the transparent conductive layer and the reflective layer, and extends to the N-type gallium nitride layer. (N-GaN); coated with a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS), the predetermined portions on both sides of the insulating layer are formed with a plurality of through holes, and are insulated The upper side of the layer is combined with the N electrode and the P electrode, and the plurality of through holes of the corresponding portion can be connected to the N electrode and the P electrode by using materials such as chromium (Cr) or aluminum (Al), and the number of the through holes is Used to adjust the current; and through the corresponding plurality of through holes to form an N contact electrode with the N-type gallium nitride layer (N-GaN), and the P electrode is through the corresponding through hole and the transparent conductive layer and the reflective layer, P type Gallium nitride layer (P-GaN) formation P contact electrode. The light-emitting element according to claim 1, wherein the N-electrode and the P-electrode of the light-emitting element of the composition are bonded on both sides of the insulating layer, and can extend to the surrounding or N-type gallium nitride layer (N-GaN). Or the substrate, the larger the extended area, the more favorable the adhesion at the time of die bonding. A light-emitting element comprising: a U-GaN layer and an N-type gallium nitride layer (N-GaN) which are slanted on both sides of a substrate, and N-type nitrided The pre-set paragraph of the gallium layer (N-GaN) is combined with a multi-layer quantum well (MQWS), and a P-type gallium nitride layer (P-GaN) is bonded over the multi-layer quantum well (MQWS), while P-type nitridation is performed. The gallium layer (P-GaN) is bonded with a transparent conductive layer and a reflective layer; and is characterized in that: a predetermined thickness of the insulating layer is overlaid on the transparent conductive layer and the reflective layer, and extends to the U-type gallium nitride layer (U-GaN); coated with a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS), the predetermined portions on both sides of the insulating layer are formed with a plurality of through holes, and are insulated The upper side of the layer is combined with the N electrode and the P electrode, and the plurality of through holes of the corresponding portion can be connected to the N electrode and the P electrode by using materials such as chromium (Cr) or aluminum (Al), and the number of the through holes is Used to adjust the current; and through the corresponding plurality of through holes to form an N contact electrode with the N-type gallium nitride layer (N-GaN), and the P electricity The pole is formed with a transparent contact layer and a transparent conductive layer and a reflective layer, a P-type gallium nitride layer (P-GaN) to form a P contact electrode. The light-emitting element according to claim 3, wherein the N-electrode and the P-electrode of the light-emitting element of the composition are bonded to both sides of the insulating layer, and can extend to the surrounding or N-GaN layer (N-GaN). Or the substrate, the larger the extended area, the more favorable the adhesion at the time of die bonding. A light-emitting device is produced by: an N-type gallium nitride layer (N-GaN) bonded on a substrate is formed by etching to form a sloped upper side layer and in an N-type gallium nitride layer. The pre-set paragraphs of (N-GaN) are sequentially combined with a slightly tilted upper multilayer quantum well (MQWS), a P-type gallium nitride layer (P-GaN), and a transparent conductive layer and a reflective layer, and then along the The active conductive layer and the active layer of the reflective layer, and the P-type gallium nitride layer (P-GaN) and the multilayer quantum well (MQWS) extend to the junction of the N-GaN layer and the substrate In order to cover a predetermined thickness of the insulating layer, the insulating layer can be tilted on both sides of the N-GaN layer to obtain the sufficient thickness and easy to reach the required thickness. The preset portions on both sides of the insulating layer are reserved for a plurality of through holes, and the N electrodes and the P electrodes are turned on by using materials such as chromium (Cr) or aluminum (Al), and the number of through holes is used to adjust the current; As a subsequent processing of dispensing, for the stent, and the N electrode is formed through the corresponding through hole to form an N contact electrode with the N-type gallium nitride layer (N-GaN), and the P electrode is transparent through the corresponding through hole The conductive layer and the reflective layer, the P-type gallium nitride layer (P-GaN) form a P contact electrode, and the N-type gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) are in After the contact of the multilayer quantum well (MQWS) is electrically conducted, the light generated by the multilayer quantum well (MQWS) is reflected by the reflective layer, and is emitted from all sides by the principle of refraction in all directions.