TWM460409U - Light emitting element - Google Patents

Description

Light-emitting element

The present invention provides a light-emitting element, which is mainly used in a light-emitting element group, and extends an insulating layer from a transparent conductive layer and a reflective layer to at least an N-type gallium nitride layer to ensure silver (Ag) during dispensing. The glue is connected to the PN to reduce the crisis of the short circuit, and the N electrode and the P electrode are arranged on the same side, so as to simplify the implementation of the related components of the light emitting element in the fabrication, and the flip chip package, and the effective effect on the light emitting element The light-transmitting region can be surely lifted, and the non-isotropic etching of the N-type gallium nitride layer is used to increase the adhesion of the insulating layer to the required thickness to prevent the occurrence of a short circuit, so that the light emitting diode (Light Emitting Diode) , LED) yield improvement.

According to the existing form of a gallium nitride (GaN) light emitting diode (LED) composition (as shown in the first figure), the light emitting diode 60 is included on a substrate 10 combined with an N-type nitrogen a gallium layer (N-GaN) 20, and a multi-layer quantum well (MQWS) 30 bonded to an N-type gallium nitride layer (N-GaN) 20, followed by a P layer on the uppermost quantum well (MQWS) 30 a gallium nitride layer (P-GaN) 40, after which a transparent light-emitting layer 50 is bonded to the P-type gallium nitride layer (P-GaN) 40, and an N-type gallium nitride layer (N-GaN) is incorporated therein. 20 and P-type gallium nitride layer (P-GaN) 40 are removed by etching to expose a portion of the N-type gallium nitride layer (N-GaN) 20 in the exposed N-type gallium nitride layer ( The N-GaN 20 is provided with a negative electrode 201, and between the P-GaN layer 40 and the transparent conductive layer 50, a positive electrode 401 is provided, and the positive electrode 401 and the transparent conductive layer are provided. Between 50, and between the N-type gallium nitride layer (N-GaN) 20 and the negative electrode 201, a protective layer 402, 202 is bonded.

The substrate 10 in the above-mentioned light-emitting diode 60 is made of sapphire so as to be incapable of conducting electricity, so the positive and negative electrodes 401 and 201 must be disposed in the light emitting diode (LED) 60. The positive electrode 401 is disposed on the front surface of the P-type gallium nitride layer (P-GaN) 40, and the negative electrode 201 is disposed on the N-type gallium nitride The front side of the layer (N-GaN) 20; the composition of the form is such that the surface of the P-GaN 40 is etched to the surface of the light-emitting diode (LED) 60 N-type gallium nitride layer (N-GaN) 20, and the etched trench must have sufficient width to be provided with a negative electrode on the surface of the N-GaN 20 by wire bonding 201. Therefore, the portion of the light-emitting region that is preliminarily caused by the multilayer quantum well (MQWS) 30 is etched away so as to affect the light-emitting region of the light-emitting diode 60. Further, since the substrate 10 made of sapphire has poor thermal conductivity, the performance of the Light Emitting Diode (LED) 60 is also lowered.

The present invention is specifically modified according to the existing defects of the existing light-emitting diodes, so as to extend the insulating layer from the transparent conductive layer and the reflective layer to at least the N-type gallium nitride in the light-emitting element group. Layer to ensure that the silver (Ag) glue is connected to the PN during the dispensing process, reducing the risk of short circuit, and the N electrode and the P electrode are arranged on the same side to simplify the assembly of related components of the light emitting element in the fabrication. Implementation, and flip chip packaging, and the effective light-emitting area of the light-emitting element can be surely improved, and the non-isotropic etching of the N-type gallium nitride layer therebetween increases the adhesion of the insulating layer to the required thickness to prevent short circuit This has led to an increase in the yield of Light Emitting Diodes (LEDs).

The main purpose of the present invention is to include a U-GaN layer and an N-type gallium nitride layer (N-GaN layer) which are slanted on both sides of a substrate. GaN), and in a pre-set paragraph of an N-GaN layer combined with a multilayer quantum well (MQWS), a P-type gallium nitride layer is additionally bonded over the multilayer quantum well (MQWS) (P- GaN), and a transparent conductive layer and a reflective layer are bonded on the P-type gallium nitride layer (P-GaN), and the transparent conductive layer and the reflective layer are overlaid on the insulating layer by a predetermined thickness and extended to at least N-type gallium nitride layer (N-GaN), or extended to the junction of U-GaN layer (U-GaN) and substrate, and P-type gallium nitride layer (P-GaN) and multilayer quantum The well (MQWS) is coated and insulated with an N-type gallium nitride layer (N-GaN) to ensure that the silver (Ag) glue is connected to the PN during the dispensing process, thereby reducing the risk of short circuit, and further on both sides of the insulating layer. The device is formed with a plurality of through holes, and materials such as chromium (Cr) and aluminum (Al) may be used to conduct the N electrode and the P electrode above the insulating layer for subsequent processing of the dispensing and the support; and the N electrode is correspondingly The through hole is formed with an N-type gallium nitride layer (N-GaN) N contact electrode and the electrode P via the corresponding through-holes in the transparent conductive layer and a reflective layer, P-type GaN layer (P-GaN) forms a P contact electrode, and after the N-type gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) are electrically connected to the multilayer quantum well (MQWS), The light generated by the multilayer quantum well (MQWS) is reflected by the reflective layer and is emitted from all sides by the principle of refraction in all directions.

The second purpose of the present invention is to fabricate a light-emitting device by using a U-GaN layer and a N-GaN layer bonded over the substrate. An isotropic etching method to form a slanted upper side layer, and sequentially combined with a slightly inclined upper multi-layer quantum well (MQWS), P-type nitrogen in a preset section of an N-GaN layer (N-GaN) a gallium layer (P-GaN), a transparent conductive layer and a reflective layer, followed by a layer along the transparent conductive layer and the reflective layer, and a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS) ) extending at least to the N-type gallium nitride layer (N-GaN), or extending to the junction of the U-GaN layer and the substrate, preferably covering a predetermined thickness of the insulating layer The insulating layer can be tilted on both sides of the N-GaN layer to form the layer, and the covering force is sufficient to easily reach the required thickness.

The third object of the present invention is to arrange the N-electrode and the P-electrode above the insulating layer of the light-emitting element, and the N-electrode and the P-electrode are arranged on the same side, so as to simplify the implementation of the relevant components of the light-emitting element in the fabrication. And the flip chip package, the brightness of the light emitting diode (LED) is improved, and the area of the other N electrode and the P electrode is extended to facilitate the adhesion of the solid crystal package.

[study]

10‧‧‧Substrate

20‧‧‧N-type gallium nitride layer

201‧‧‧Negative electrode

202, 402‧‧‧ protective layer

30‧‧‧Quantum Well

40‧‧‧P-type gallium nitride layer

401‧‧‧ positive electrode

50‧‧‧Indium tin oxide layer

60‧‧‧Lighting diode

[this creation]

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

First figure: A schematic cross-sectional view of a light-emitting element.

Second picture: a schematic view of the light-emitting element of the present invention.

Third figure: A-A cross-sectional view of the second figure (the insulating layer reaches the N-GAN layer, and the N electrode and the P electrode extend to the N-GAN layer).

Fourth figure: a schematic plan view of the N-electrode and P-electrode not combined with the present light-emitting element.

Fig. 5 is a cross-sectional view showing another preferred embodiment of the present light-emitting element (the insulating layer extends to the U-GAN layer).

Fig. 6(a): The state of implementation of the N electrode and the P electrode of the present light-emitting element (1).

Fig. 6(b): The state of implementation of the N electrode and the P electrode of the present light-emitting element (2).

Fig. 6(c): The state of implementation of the N electrode and the P electrode of the present light-emitting element (3).

The light-emitting elements of the present design (such as the second to sixth figures) are included in the light-emitting element 9: a U-GaN layer 21 (U-GaN) 21 which is inclined on both sides of a substrate 1 N-type gallium nitride layer (N-GaN) 2, and in a pre-set paragraph of N-GaN layer 2 combined with a multilayer quantum well (MQWS) 3, in the multilayer quantum well (MQWS) 3 A P-type GaN layer (P-GaN) 4 is bonded to the upper layer, and a transparent conductive layer is bonded to the P-type GaN layer 4 (such as ITO, GZO, etc.) And the reflective layer 5 (the materials used, such as: Al, Ag, DBR, etc.) are overlaid on the transparent conductive layer and the reflective layer by a predetermined thickness of the insulating layer 6 [material used such as: cerium oxide or the like] 5, and at least extended to the N-type gallium nitride layer (N-GaN) 2 [as shown in the third figure], or extended to the junction of the U-GaN layer (U-GaN) and the substrate is better (such as the fifth FIG. 4, the P-type gallium nitride layer (P-GaN) 4 and the multi-layer quantum well (MQWS) 3 are coated, and the predetermined portions on both sides of the insulating layer 6 are formed with a plurality of through holes 61, 62, respectively. On both sides of the insulating layer 6, the N electrode 7 and the P electrode 8 are combined, and the corresponding portions are The plurality of through holes 61, 62 are made to conduct the N electrode 7 and the P electrode 8 by using a material such as chromium (Cr) or aluminum (Al), and the N electrode 7 is passed through the corresponding through hole 61 and the N-type gallium nitride layer (N-GaN). 2 forming an N contact electrode 71, and the P electrode 8 forms a P contact electrode 81 through the corresponding through hole 62 and the transparent conductive layer and the reflective layer 5, the P-type gallium nitride layer (P-GaN) 4, and borrows N The gallium nitride layer (N-GaN) 2 and the P-type gallium nitride layer (P-GaN) 4 are electrically connected to the multilayer quantum well (MQWS) 3 to generate the multilayer quantum well (MQWS) 3 Light is reflected by the reflective layer and is emitted from all sides by the principle of refraction (mostly from the direction of the substrate).

The light-emitting element 9 (such as the second, third, fifth, and sixth figures) designed for the present invention is produced by the U-type gallium nitride layer (U-GaN) 21 and N-type nitride which are bonded above the substrate 1. The gallium layer (N-GaN) 2 is formed by etching to form a slanted upper side layer, and is sequentially connected in a predetermined step of the N-GaN layer 2 to be slightly inclined. Multilayer quantum well (MQWS) 3, P-type gallium nitride layer (P-GaN) 4, and a transparent conductive layer and reflective layer 5, and then along the action layer of the transparent conductive layer and the reflective layer 5, and P-type Gallium nitride layer (P-GaN) 4 and both sides of the multilayer quantum well (MQWS) 3 and extending at least to the N-type gallium nitride layer (N-GaN) 2 [as shown in the third figure] or to the U-type gallium nitride layer (U - GaN) is better at the interface with the substrate (as shown in the fifth figure), and is provided with a predetermined thickness of the insulating layer 6 so that the insulating layer 6 can be formed by an N-GaN layer 2 The two sides are inclined to the upper surface to obtain sufficient thickness to easily reach the required thickness. The predetermined portions on both sides of the insulating layer 6 are reserved for the plurality of through holes 61, 62 by using chromium (Cr) or aluminum (Al). The material is such that the N electrode 7 and the P electrode 8 are turned on, and a non-contact region 91 must be maintained between the N electrode 7 and the P electrode 8, and the insulating layer 6 having a predetermined thickness can avoid the N-type gallium nitride layer ( N-GaN) 2 is in contact with the P-type gallium nitride layer (P-GaN) 4, and the silver (Ag) gel in the dispensing process is turned on, resulting in a short circuit, thus lowering the yield of production.

The light-emitting element of the above composition has the following advantages in implementation:

1. The light-emitting element is extended in the form of a strip, so that the N-electrode and the P-electrode are disposed on both sides of the insulating layer, and a non-contact area is easily formed.

2. The N-type gallium nitride layer (N-GaN) and the P-type gallium nitride layer (P-GaN) between the light-emitting elements are kept in a space that is completely separated by the insulating layer to avoid the process of dispensing. Silver (Ag) glue is in contact at the same time, resulting in low yield.

3. The light-emitting element group can be arranged on the same side as the N-electrode and the P-electrode, so as to simplify the implementation of the related components of the light-emitting element in the fabrication and the flip-chip package.

4. The light-emitting element group can use the materials of chromium (Cr), aluminum (Al) and the like to conduct the N-electrode and the P-electrode by using a plurality of through-holes reserved, and the amount of the through-holes can be used to adjust the current.

5. The area of the light-emitting element group can extend the adhesion degree of the N-electrode and the P-electrode to facilitate the adhesion of the adhesion when the crystal is fixed, so as to increase the fixing degree of the support, and contribute to the improvement of the thermal conductivity and the yield of the LED.

1‧‧‧Substrate

2‧‧‧N-type gallium nitride layer

21‧‧‧U-type gallium nitride layer

3‧‧‧Quantum Well

4‧‧‧P-type gallium nitride layer

5‧‧‧Transparent conductive and reflective layers

6‧‧‧Insulation

61, 62‧‧‧ through holes

7‧‧‧N electrode

71‧‧‧N contact electrode

8‧‧‧P electrode

81‧‧‧P contact electrode

9‧‧‧Lighting elements

91‧‧‧ Non-contact areas

Claims (4)

A light-emitting element comprising: a U-GaN layer and an N-type gallium nitride layer (N-GaN) which are slanted on both sides of a substrate, and N-type nitrided The pre-set paragraph of the gallium layer (N-GaN) is combined with a multi-layer quantum well (MQWS), and a P-type gallium nitride layer (P-GaN) is bonded over the multi-layer quantum well (MQWS), while P-type nitridation is performed. The gallium layer (P-GaN) is bonded with a transparent conductive layer and a reflective layer; and is characterized in that: a predetermined thickness of the insulating layer is overlaid on the transparent conductive layer and the reflective layer, and extends to the N-type gallium nitride layer. (N-GaN); coated with a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS), the predetermined portions on both sides of the insulating layer are formed with a plurality of through holes, and are insulated The upper side of the layer is combined with the N electrode and the P electrode, and the plurality of through holes of the corresponding portion can be connected to the N electrode and the P electrode by using materials such as chromium (Cr) or aluminum (Al), and the number of the through holes is Used to adjust the current; and through the corresponding plurality of through holes to form an N contact electrode with the N-type gallium nitride layer (N-GaN), and the P electrode is through the corresponding through hole and the transparent conductive layer and the reflective layer, P type Gallium nitride layer (P-GaN) formation P contact electrode. The light-emitting element according to claim 1, wherein the N-electrode and the P-electrode of the light-emitting element of the composition are bonded on both sides of the insulating layer, and can extend to the surrounding or N-type gallium nitride layer (N-GaN). Or the substrate, the larger the extended area, the more favorable the adhesion at the time of die bonding. A light-emitting element comprising: a U-GaN layer and an N-type gallium nitride layer (N-GaN) which are slanted on both sides of a substrate, and N-type nitrided The pre-set paragraph of the gallium layer (N-GaN) is combined with a multi-layer quantum well (MQWS), and a P-type gallium nitride layer (P-GaN) is bonded over the multi-layer quantum well (MQWS), while P-type nitridation is performed. The gallium layer (P-GaN) is bonded with a transparent conductive layer and a reflective layer; and is characterized in that: a predetermined thickness of the insulating layer is overlaid on the transparent conductive layer and the reflective layer, and extends to the U-type gallium nitride layer (U-GaN); coated with a P-type gallium nitride layer (P-GaN) and a multilayer quantum well (MQWS), the predetermined portions on both sides of the insulating layer are formed with a plurality of through holes, and are insulated The upper side of the layer is combined with the N electrode and the P electrode, and the plurality of through holes of the corresponding portion can be connected to the N electrode and the P electrode by using materials such as chromium (Cr) or aluminum (Al), and the number of the through holes is Used to adjust the current; The plurality of through holes are formed to form an N contact electrode with the N-type gallium nitride layer (N-GaN), and the P electrode is through the corresponding through hole and the transparent conductive layer and the reflective layer, the P-type gallium nitride layer (P- GaN) forms a P contact electrode. The light-emitting element according to claim 3, wherein the N-electrode and the P-electrode of the light-emitting element of the composition are bonded to both sides of the insulating layer, and can extend to the surrounding or N-GaN layer (N-GaN). Or the substrate, the larger the extended area, the more favorable the adhesion at the time of die bonding.