TWI531242B - 使用堆疊讀出積體電路來處理檢測器陣列信號之技術 - Google Patents

使用堆疊讀出積體電路來處理檢測器陣列信號之技術 Download PDF

Info

Publication number
TWI531242B
TWI531242B TW100142703A TW100142703A TWI531242B TW I531242 B TWI531242 B TW I531242B TW 100142703 A TW100142703 A TW 100142703A TW 100142703 A TW100142703 A TW 100142703A TW I531242 B TWI531242 B TW I531242B
Authority
TW
Taiwan
Prior art keywords
roic
current
time period
detector array
detector
Prior art date
Application number
TW100142703A
Other languages
English (en)
Chinese (zh)
Other versions
TW201230795A (en
Inventor
羅傑Ｗ 葛拉漢
Original Assignee
雷神公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 雷神公司 filed Critical 雷神公司
Publication of TW201230795A publication Critical patent/TW201230795A/zh
Application granted granted Critical
Publication of TWI531242B publication Critical patent/TWI531242B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J1/46—Electric circuits using a capacitor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/2803—Investigating the spectrum using photoelectric array detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36—Investigating two or more bands of a spectrum by separate detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
TW100142703A 2010-11-23 2011-11-22 使用堆疊讀出積體電路來處理檢測器陣列信號之技術 TWI531242B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/952,282 US8415623B2 (en) 2010-11-23 2010-11-23 Processing detector array signals using stacked readout integrated circuits

Publications (2)

Publication Number Publication Date
TW201230795A TW201230795A (en) 2012-07-16
TWI531242B true TWI531242B (zh) 2016-04-21

Family

ID=45094482

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100142703A TWI531242B (zh) 2010-11-23 2011-11-22 使用堆疊讀出積體電路來處理檢測器陣列信號之技術

Country Status (5)

Country Link
US (1) US8415623B2 (enExample)
EP (1) EP2456193B1 (enExample)
JP (1) JP5717612B2 (enExample)
IL (1) IL216363A (enExample)
TW (1) TWI531242B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637800B2 (en) * 2011-04-19 2014-01-28 Altasens, Inc. Image sensor with hybrid heterostructure
US9310495B2 (en) * 2011-05-04 2016-04-12 Oy Ajat Ltd. Photon/energy identifying X-ray and gamma ray imaging device (“PID”) with a two dimensional array of pixels and system therefrom
US8773562B1 (en) * 2013-01-31 2014-07-08 Apple Inc. Vertically stacked image sensor
US9110136B2 (en) 2013-09-27 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit and method for monolithic stacked integrated circuit testing
US20180376044A1 (en) * 2017-06-22 2018-12-27 Robert Bosch Gmbh Device Having A CMOS VL and IR Imaging System
US10883804B2 (en) * 2017-12-22 2021-01-05 Ams Sensors Uk Limited Infra-red device
US20200344426A1 (en) * 2019-04-15 2020-10-29 Owl Autonomous Imaging, Inc. Thermal ranging devices and methods
US12185018B2 (en) 2019-06-28 2024-12-31 Apple Inc. Stacked electromagnetic radiation sensors for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing
US12464263B2 (en) 2023-04-26 2025-11-04 Bae Systems Information And Electronic Systems Integration Inc. Programmable event output pixel

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570617B2 (en) 1994-01-28 2003-05-27 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US5512750A (en) * 1994-06-03 1996-04-30 Martin Marietta Corporation A-dual band IR sensor having two monolithically integrated staring detector arrays for simultaneous, coincident image readout
WO1997017800A1 (en) 1995-11-07 1997-05-15 California Institute Of Technology An image sensor with high dynamic range linear output
US5892541A (en) 1996-09-10 1999-04-06 Foveonics, Inc. Imaging system and method for increasing the dynamic range of an array of active pixel sensor cells
FR2759494B1 (fr) * 1997-02-07 1999-03-05 Commissariat Energie Atomique Detecteur de rayonnement photonique multicolore
US6493030B1 (en) 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6078037A (en) 1998-04-16 2000-06-20 Intel Corporation Active pixel CMOS sensor with multiple storage capacitors
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
US6504141B1 (en) 2000-09-29 2003-01-07 Rockwell Science Center, Llc Adaptive amplifier circuit with enhanced dynamic range
US6924841B2 (en) 2001-05-02 2005-08-02 Agilent Technologies, Inc. System and method for capturing color images that extends the dynamic range of an image sensor using first and second groups of pixels
US6885002B1 (en) 2001-08-31 2005-04-26 Raytheon Company IRFPA ROIC with dual TDM reset integrators and sub-frame averaging functions per unit cell
US6864965B2 (en) * 2002-03-12 2005-03-08 Bae Systems Information And Electronic Systems Integration Inc. Dual-mode focal plane array for missile seekers
US20060055800A1 (en) * 2002-12-18 2006-03-16 Noble Device Technologies Corp. Adaptive solid state image sensor
US7586074B2 (en) 2003-02-17 2009-09-08 Raytheon Company Multi-mode high capacity dual integration direct injection detector input circuit
US7492399B1 (en) * 2004-02-17 2009-02-17 Raytheon Company High dynamic range dual mode charge transimpedance amplifier/source follower per detector input circuit
US7091531B2 (en) 2004-04-07 2006-08-15 Micron Technology, Inc. High dynamic range pixel amplifier
US7723815B1 (en) * 2004-07-09 2010-05-25 Raytheon Company Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization
JP3976754B2 (ja) 2004-07-13 2007-09-19 マイクロン テクノロジー，インコーポレイテッド 選択読取りによる広ダイナミックレンジ撮像デバイス
US7551059B2 (en) * 2005-01-06 2009-06-23 Goodrich Corporation Hybrid infrared detector array and CMOS readout integrated circuit with improved dynamic range
US7095355B1 (en) 2005-05-09 2006-08-22 Raytheon Company Low power ADC for imaging arrays
US20070102622A1 (en) 2005-07-01 2007-05-10 Olsen Richard I Apparatus for multiple camera devices and method of operating same
JP4901320B2 (ja) * 2006-06-13 2012-03-21 三菱電機株式会社 ２波長イメージセンサ
US7592593B2 (en) * 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
US7616243B2 (en) 2007-03-07 2009-11-10 Altasens, Inc. Method and apparatus for improving and controlling dynamic range in an image sensor
US8154099B2 (en) * 2009-08-19 2012-04-10 Raytheon Company Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate

Also Published As

Publication number Publication date
EP2456193A3 (en) 2014-08-20
TW201230795A (en) 2012-07-16
JP2012114439A (ja) 2012-06-14
EP2456193A2 (en) 2012-05-23
IL216363A0 (en) 2012-02-29
US20120126121A1 (en) 2012-05-24
IL216363A (en) 2016-10-31
EP2456193B1 (en) 2020-07-08
US8415623B2 (en) 2013-04-09
JP5717612B2 (ja) 2015-05-13

Similar Documents

Publication Publication Date Title
TWI531242B (zh) 使用堆疊讀出積體電路來處理檢測器陣列信號之技術
US11588983B2 (en) High dynamic range imaging pixels with multiple photodiodes
US10586822B2 (en) Semiconductor module, MOS type solid-state image pickup device, camera and manufacturing method of camera
US10764526B1 (en) Spatial derivative pixel array with adaptive quantization
CN104429057B (zh) 固态成像设备、固态成像设备的驱动方法以及电子装置
EP3430648B1 (en) Stacked backside-illuminated quanta image sensor with cluster-parallel readout
US20100271517A1 (en) In-pixel correlated double sampling pixel
JP5224914B2 (ja) 固体撮像装置
TW201004326A (en) Suppression of row-wise noise in CMOS image sensors
TW200524413A (en) CMOS imaging system with low fixed pattern noise
CN108305884A (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
TW200950076A (en) Circuit and photo sensor overlap for backside illumination image sensor
CN108282625A (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
JP2009181986A (ja) 固体撮像素子および固体撮像装置
CN102695007B (zh) 图像传感器及其驱动方法
CN108269819A (zh) 像素单元和形成像素单元的方法及数字相机成像系统组件
KR20210054628A (ko) 이미지 센서
JP3965049B2 (ja) 撮像装置
US20220038662A1 (en) Solid-state image pickup device and image pickup device
EP3028305B1 (en) Pixel circuit
US11532654B2 (en) Image sensor
Scheffer A wafer scale active pixel CMOS image sensor for generic X-ray radiology
JP2020181932A (ja) 固体撮像装置、固体撮像装置の製造方法、および電子機器
US10847567B2 (en) Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other
US20230027347A1 (en) Bias circuit with improved noise performance