TWI529829B - Installation method and installation device - Google Patents
Installation method and installation device Download PDFInfo
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- TWI529829B TWI529829B TW101118622A TW101118622A TWI529829B TW I529829 B TWI529829 B TW I529829B TW 101118622 A TW101118622 A TW 101118622A TW 101118622 A TW101118622 A TW 101118622A TW I529829 B TWI529829 B TW I529829B
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/75301—Bonding head
- H01L2224/75302—Shape
- H01L2224/75303—Shape of the pressing surface
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
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- Supply And Installment Of Electrical Components (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本發明是關於透過熱固性樹脂(thermosetting resin)將倒裝晶片(flip chip)安裝於基板(substrate)之安裝方法(mounting method)及安裝裝置(mounting apparatus)。
The present invention relates to a mounting method and a mounting apparatus for mounting a flip chip on a substrate through a thermosetting resin.
已知有透過熱固性樹脂將倒裝晶片(以下稱為晶片)安裝於樹脂基板(resin substrate)(以下稱為基板)的方法。例如如圖8所示的安裝裝置1被使用。安裝裝置1具備:緊壓晶片2之接合工具(bonding tool)4；保持基板3之基板平台5。在接合工具4具備有將晶片2加熱之加熱工具(heat tool)7與吸附晶片2之附件(attachment)8。附件8透過設於接合工具4的吸引孔16與設於附件8的吸引孔15真空吸引。晶片2透過設於接合工具4的吸引孔9與設於附件8的吸引孔14真空吸引。加熱工具7透過未圖示的螺旋(screw)固定於接合工具4。各個吸引孔9、16經由吸引管10a、10b、變換閥(changeover valve)11a、11b等與真空吸入泵(vacuum suction pump)12連接。
[專利文獻1] 日本國特開2003-289088號公報
A method of attaching a flip chip (hereinafter referred to as a wafer) to a resin substrate (hereinafter referred to as a substrate) through a thermosetting resin is known. For example, the mounting device 1 shown in Fig. 8 is used. The mounting device 1 includes a bonding tool 4 that presses the wafer 2 and a substrate platform 5 that holds the substrate 3. The bonding tool 4 is provided with a heat tool 7 for heating the wafer 2 and an attachment 8 for adsorbing the wafer 2. The attachment 8 is vacuum-applied through the suction hole 16 provided in the bonding tool 4 and the suction hole 15 provided in the attachment 8. The wafer 2 is vacuum-sucked through a suction hole 9 provided in the bonding tool 4 and a suction hole 14 provided in the attachment 8. The heating tool 7 is fixed to the bonding tool 4 by a screw (not shown). Each of the suction holes 9 and 16 is connected to a vacuum suction pump 12 via suction pipes 10a and 10b, changeover valves 11a and 11b, and the like.
[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-289088
當使用圖8所示的安裝裝置1將晶片2安裝於基板3時，將加熱工具7升溫至規定的溫度，將附件8加熱，將供給至基板3的熱固性樹脂30加熱。此時，熱固性樹脂30的揮發成分(volatile component)的一部分隨著加熱而散發到熱固性樹脂30的周邊。該等散發的揮發成分因附件8被真空吸引，故由圖8所示的加熱工具7與附件8的間隙(圖8的箭頭A部)及/或附件8與晶片2的間隙(圖8的箭頭B部)被吸引。與安裝裝置1的運轉時間相應，被吸引的揮發成分凝結或凝固於加熱工具7與附件8的間隙，或凝結或凝固於進行真空吸引的運轉停止的變換閥11a、11b等。若凝結或凝固於加熱工具7與附件8之間，則會發生由加熱工具7到附件8的熱傳導不良，即使以規定溫度將加熱工具7升溫，附件8也不被以規定的溫度加熱而會招致安裝不良。而且，若揮發成分凝結或凝固於變換閥11a、11b，則會招致真空吸引的動作不良。
因此，本發明的課題為提供一種安裝方法及安裝裝置，在將晶片安裝於基板時，不會由配設於接合頭(bondinghead)的附件與加熱工具的間隙及/或晶片與附件的間隙吸引由被加熱的熱固性樹脂產生的揮發成分。
為了解決上述課題，記載於申請專利範圍第1項的發明是一種安裝方法，一邊將被吸附保持於接合工具的晶片加熱，一邊將晶片安裝於填充或配置有熱固性樹脂的基板，
接合工具包含:被升溫至規定的溫度之加熱工具，與吸附保持晶片之附件，與覆蓋接合工具外周，延伸至附件的側部之外殼(cover)，
在外殼的側面設有氣體供給口，
附件透過設於接合工具內的吸引孔真空吸引，
一邊由外殼側面的氣體供給口供給氣體，一邊將被吸附保持於附件的晶片安裝於基板。
記載於申請專利範圍第2項的發明是在申請專利範圍第1項的發明的安裝方法中，在前述附件的晶片吸引孔的外周設有外部空氣導入溝，一邊將前述氣體供給至外部空氣導入溝，一邊將被吸附保持於附件的晶片安裝於基板。
記載於申請專利範圍第3項的發明是在申請專利範圍第1項的發明的安裝方法中，在前述接合工具設有將前述加熱工具冷卻的外部空氣供給孔，在將前述晶片安裝於基板後，由外部空氣供給孔供給氣體將加熱工具冷卻。
記載於申請專利範圍第4項的發明是在申請專利範圍第3項的發明的安裝方法中，在前述基板的側方配設有吸引噴嘴，在將前述晶片安裝於基板後，使用吸引噴嘴吸引漂浮於基板上部的揮發成分。
記載於申請專利範圍第5項的發明是一種安裝裝置，一邊將被吸附保持於接合工具的晶片加熱，一邊將晶片安裝於填充或配置有熱固性樹脂的基板，包含:
接合工具，包含:被升溫至規定的溫度之加熱工具，與吸附保持晶片之附件，與覆蓋接合工具外周，延伸至附件的側部之外殼；以及
吸引孔，真空吸引附件，其中
在外殼側面設有氣體供給口而供給氣體。
記載於申請專利範圍第6項的發明是在申請專利範圍第5項的發明的安裝裝置中，在前述附件的晶片吸引孔的外周設有外部空氣導入溝，前述氣體被供給至外部空氣導入溝。
記載於申請專利範圍第7項的發明是在申請專利範圍第5項的發明的安裝裝置中，在前述接合工具設有將加熱工具冷卻的外部空氣供給孔。
記載於申請專利範圍第8項的發明是在申請專利範圍第7項的發明的安裝裝置中，在前述基板的側方具備吸引噴嘴。
When the wafer 2 is mounted on the substrate 3 by using the mounting device 1 shown in FIG. 8, the heating tool 7 is heated to a predetermined temperature, and the attachment 8 is heated to heat the thermosetting resin 30 supplied to the substrate 3. At this time, a part of the volatile component of the thermosetting resin 30 is emitted to the periphery of the thermosetting resin 30 as it is heated. The emitted volatile components are vacuum-absorbed by the attachment 8, so the gap between the heating tool 7 and the attachment 8 shown in Fig. 8 (the arrow A portion of Fig. 8) and/or the gap between the attachment 8 and the wafer 2 (Fig. 8 Arrow B) is attracted. In response to the operation time of the mounting device 1, the attracted volatile components are condensed or solidified in the gap between the heating tool 7 and the attachment 8, or the switching valves 11a, 11b and the like which are condensed or solidified in the operation for stopping the vacuum suction. If it is condensed or solidified between the heating tool 7 and the attachment 8, heat conduction failure from the heating tool 7 to the attachment 8 occurs, and even if the heating tool 7 is heated at a predetermined temperature, the attachment 8 is not heated at a predetermined temperature. Inadequate installation. Further, when the volatile component is condensed or solidified in the changeover valves 11a and 11b, the malfunction of the vacuum suction is caused.
Accordingly, an object of the present invention is to provide a mounting method and mounting apparatus that does not attract a gap between an attachment disposed on a bonding head and a heating tool and/or a gap between a wafer and an attachment when the wafer is mounted on the substrate. A volatile component produced by a heated thermosetting resin.
In order to solve the above problems, the invention of the first aspect of the invention is a mounting method in which a wafer is mounted on a substrate filled with or placed with a thermosetting resin while heating the wafer held by the bonding tool.
The bonding tool includes: a heating tool that is heated to a predetermined temperature, an attachment that adsorbs and holds the wafer, and a cover that covers the outer periphery of the bonding tool and extends to the side of the attachment,
a gas supply port is provided on the side of the outer casing,
The attachment is vacuum-applied through a suction hole provided in the bonding tool.
The wafer which is adsorbed and held by the attachment is attached to the substrate while supplying gas from the gas supply port on the side surface of the casing.
According to the invention of the second aspect of the invention, in the method of the invention of the first aspect of the invention, the external air introduction groove is provided on the outer periphery of the wafer suction hole of the accessory, and the gas is supplied to the outside air. The groove is attached to the substrate while the wafer held by the attachment is attached.
According to a third aspect of the invention, in the mounting method of the invention of claim 1, the bonding tool is provided with an external air supply hole for cooling the heating tool, and after the wafer is mounted on the substrate The gas is supplied from the external air supply hole to cool the heating tool.
According to a fourth aspect of the invention, in the fourth aspect of the invention, in the method of mounting the third aspect of the invention, a suction nozzle is disposed on a side of the substrate, and after the wafer is mounted on the substrate, the suction nozzle is used to attract Volatile components floating on the upper part of the substrate.
The invention described in claim 5 is a mounting apparatus for mounting a wafer on a substrate filled or disposed with a thermosetting resin while heating the wafer held by the bonding tool, including:
The bonding tool comprises: a heating tool heated to a predetermined temperature, an attachment for adsorbing and holding the wafer, and an outer casing covering the outer periphery of the bonding tool and extending to the side of the attachment; and a suction hole, a vacuum suction attachment, wherein the outer side of the outer casing is provided There is a gas supply port to supply gas.
According to a sixth aspect of the invention, in the mounting device of the invention of claim 5, the outer air introduction groove is provided on the outer periphery of the wafer suction hole of the attachment, and the gas is supplied to the outer air introduction groove. .
According to a seventh aspect of the invention, in the mounting device of the invention of claim 5, the joining tool is provided with an external air supply hole for cooling the heating tool.
According to a seventh aspect of the invention, in the mounting device of the invention of claim 7, the suction nozzle is provided on the side of the substrate.
【發明的功效】
依照記載於申請專利範圍第1項及第5項的發明，被外殼包圍的接合工具的周邊環境透過來自氣體供給口的氣體的供給而成為正壓，可防止熱固性樹脂的揮發成分的流入。由附件與加熱工具的間隙及/或晶片與附件的間隙，被由氣體供給口供給的氣體被吸引。因此，揮發成分不會凝結或凝固於附件與加熱工具之間。而且，揮發成分不會凝結或凝固於變換閥。
依照記載於申請專利範圍第2項及第6項的發明，被由附件的晶片吸引孔吸引的氣體成為設於其外周的外部空氣導入溝的氣體。因被由外殼的側面的氣體供給口供給至外部空氣導入溝的氣體被供給，故包含揮發成分的氣體不會透過晶片吸附而被吸引。因此，揮發成分不會凝結或凝固於晶片與附件之間。
依照記載於申請專利範圍第3項及第7項的發明，在晶片之安裝於基板完了後，能以短時間冷卻加熱工具，作業時間(tact time)被縮短生產性提高。
依照記載於申請專利範圍第4項及第8項的發明，因在晶片之安裝於基板完了後，可透過吸引噴嘴吸引漂浮於基板的上部的揮發成分，故揮發成分不會附著於附件或被吸引到附件。
[Effect of the invention]
According to the invention described in the first and fifth aspects of the patent application, the surrounding environment of the bonding tool surrounded by the outer casing is positively pressurized by the supply of gas from the gas supply port, and the inflow of the volatile component of the thermosetting resin can be prevented. The gap between the attachment and the heating tool and/or the gap between the wafer and the attachment is attracted by the gas supplied from the gas supply port. Therefore, the volatile components do not condense or solidify between the attachment and the heating tool. Moreover, the volatile components do not condense or solidify in the shift valve.
According to the invention described in the second and sixth aspects of the patent application, the gas sucked by the wafer suction hole of the attachment becomes the gas of the outer air introduction groove provided on the outer periphery thereof. Since the gas supplied to the external air introduction groove by the gas supply port on the side surface of the outer casing is supplied, the gas containing the volatile component is not sucked by the wafer and is attracted. Therefore, the volatile components do not condense or solidify between the wafer and the attachment.
According to the invention described in the third and seventh aspects of the patent application, after the wafer is mounted on the substrate, the heating tool can be cooled in a short time, and the tact time is shortened and the productivity is improved.
According to the invention described in the fourth and eighth aspects of the patent application, since the volatilization component floating on the upper portion of the substrate can be sucked through the suction nozzle after the wafer is mounted on the substrate, the volatile component does not adhere to the attachment or is Attracted to the attachment.
<實施的形態一>
針對本發明的實施的形態一，一邊參照圖面一邊進行說明。圖1是本發明的實施的形態一的安裝裝置之側視圖。在圖1中設面向安裝裝置1左右方向為X軸，設前後方向為Y軸，設正交於由X軸與Y軸構成的XY平面的軸為Z軸(上下方向)，設繞Z軸旋轉為θ軸。圖2是由Z軸下側參照 安裝裝置1的接合工具4，隔著間隔配置構成零件之附件8與加熱工具7與框架(frame)6而圖示之概略斜視圖。此外，在先前技術使用的機器的符號在實施的形態中也使用同樣的符號。
安裝裝置1是由如下的構件構成:將晶片2加壓於基板3之接合工具4；保持基板3之基板平台5。接合工具4可移動於Z軸方向而構成。基板平台5可移動於X、Y軸方向及θ軸方向而構成。
如圖2所示，接合工具4為加熱工具7的頂面7a透過未圖示的螺旋固定於框架6的底面6b。在加熱工具7的底面7b吸附保持有附件8。在附件8的底面8b吸附保持有晶片2。如圖1所示，在框架6設有真空吸引用的吸引孔9。吸引孔9連接於吸引管10a，經由變換閥11a連接於吸入泵(suction pump)12。在吸入泵12配設有變換閥11b當作吸引附件8的系統。變換閥11b經由吸引管10b連接於框架6的吸引孔16。真空吸引的運轉及停止是透過變換閥11a、11b進行。
在加熱工具7設有由頂面7a貫通到底面7b的吸引孔13。進而在附件8也設有由頂面8a貫通到底面8b的吸引孔14。再者，吸引孔13、14成為與框架6的吸引孔9連通的構造。如圖2所示，在附件8的底面8b設有晶片吸附溝8c。在晶片吸附溝8c的中央附近配置有吸引孔14，藉由附件8的底面8b真空吸附晶片2而構成。
在加熱工具7的底面7b設有吸引附件8的吸附溝7c。在吸附溝7c設有吸引孔15。吸引孔15經由框架6的內部的吸引孔16連接於吸引管10b(參照圖1)。
附件8的頂面8a(加熱工具7側的吸附面)被加工成平坦。底面8b配合晶片2的尺寸形成有凸部8d。凸部8d其外周(與晶片2的頂面2a接觸的面)被加工成平坦，在內側形成有晶片吸附溝8c與外部空氣導入溝8f。
如圖1所示，在接合工具4的外周配設有覆蓋接合工具4的框架與加熱工具7與附件8的外殼20。外殼20的上端20a連接於接合工具4的上部。外殼20的下端20b位於附件8的側面8e。在外殼20的側面20c設有由外部供給氣體的氣體供給口21。在氣體供給口21連接有供給導管22，供給導管22的他端連接於加壓泵23。來自加壓泵23為供給被過濾過的氣體(例如空氣)，外殼20內為被潔淨化的氣體且成為正壓狀態。被潔淨化的空氣由附件8的側面8e與外殼20的下端20b的間隙洩漏。所洩漏的空氣具備由漂浮於附件8的周圍的逸出氣體(outgas)(由熱固性樹脂30的加熱所產生的揮發成分)對附件8進行空氣沖洗(air purge)的功效。
在框架6於與加熱工具7的頂面7a接觸之處設有與外殼20內連通的空隙17。在加熱工具7設有與空隙17相通的導入孔18。而且，在附件8也設有導入孔19。進入了空隙17的氣體經由導入孔18與導入孔19供給至設於附件8的外部空氣導入溝8f。外部空氣導入溝8f設於晶片吸附溝8c的外側。為了防止吸入來自附件8的底面8b的揮發成分，在外部空氣導入溝8f設有導入孔19，透過導入孔19及導入孔18與空隙17連接。空隙17側由於是比附件8的外側還成為正壓狀態，故外部空氣導入溝8f內也成為正壓。因此，由被塗佈於基板3的熱固性樹脂30的加熱所產生的揮發成分既不會侵入空氣導入溝8f，也不會侵入晶片吸附溝8c及晶片吸引孔14。此外，熱固性樹脂30例如可舉出非導電性漿糊(non-conductive paste)或導電性漿糊(conductive paste)、將樹脂作成片狀(sheet-like)之非導電性片、導電性片等。
使用圖4說明附件8與加熱工具7之間的氣體的流動。流入到空隙17的氣體(圖4的箭頭C)通過導入孔18與導入孔19流到附件8的外部空氣導入溝8f。外部空氣導入溝8f的氣體由附件8與晶片2的間隙流到晶片吸附溝8c。流到晶片吸附溝8c的氣體(圖4的箭頭D)流到吸引孔14，經由吸引孔13、9而被吸引(圖4的箭頭E)。而且，藉由外殼20覆蓋且正壓狀態的氣體的一部分由加熱工具7與附件8的間隙流入(圖4的箭頭F)，通過吸附溝7c，經由吸引孔15、16而被吸引(圖4的箭頭G)。
使用這種安裝裝置1針對將晶片2安裝於基板3的安裝方法，根據圖3的流程圖進行說明。
首先，熱固性樹脂30被塗佈於基板3的安裝處，基板由被吸附保持於基板平台5的狀態開始(步驟SP01)。
接著，透過晶片運送裝置將晶片2供給至接合工具4的附件8(步驟SP02)。晶片2的頂面2a被吸附保持於附件8的底面8b。吸附是透過如下而進行:吸入泵12被驅動，變換閥11a、11b動作，經由吸引管10a、10b及吸引孔13、14真空吸引晶片吸附溝8c。
接著，未圖示的2視野的辨識手段(recognition means)被插入晶片2與基板3之間，影像辨識(image recognition)被附加於晶片2與基板3的對準標記(alignment mark)(步驟SP03)。根據對準標記的影像辨識資料，基板平台5動作於X、Y方向及θ方向，晶片2與基板3的對準(alignment)被進行。
接著，加熱工具7的加熱器(heater)被升溫至規定溫度。而且，由外殼20的氣體供給口21供給氣體。氣體被由加壓泵23經由供給導管22供給(步驟SP04)。所供給的氣體經由設於框架6的底面6b的空隙17通過導入孔18、19流到附件8的外部空氣導入溝8f。然後由外部空氣導入溝8f通過附件8與晶片2的頂面2a的間隙流到晶片吸附溝8c。而且，所供給的氣體也被由加熱工具7的底面7b與附件8的頂面8a的間隙吸引。
接著，使接合工具4下降，將晶片2緊壓於基板3。因加熱工具7升溫，故被塗佈於基板3的熱固性樹脂30被加熱(步驟SP05)。由熱固性樹脂30的加熱所產生的揮發成分散發至晶片2的周邊。因接合工具4的周圍藉由外殼20覆蓋，外殼20內被保持於正壓，故散發至晶片2的周邊的揮發成分不會侵入吸引孔15、16。因晶片吸附溝8c被真空吸引，故由外殼20的氣體供給口21供給的氣體被吸引。因此，即使安裝裝置1的運轉時間增加，熱固性樹脂30的揮發成分也不會凝結或凝固於加熱工具7與附件8的間隙及/或吸引孔13、14及/或變換閥11a、11b。
接著，在緊壓晶片2規定時間後，使變換閥11a動作停止真空吸引，解除由附件8進行的晶片2的吸附保持(步驟SP06)。而且，停止加熱工具7的升溫。即使晶片2被由附件8移除，也藉由被由設於晶片吸附溝8c的外周的外部空氣導入溝8f供給的氣體使得晶片吸附溝8c周邊成為正壓狀態。因此，不會將散發的揮發成分吸入晶片吸附溝8c。
接著，使接合工具4上升，準備好來自晶片運送裝置之下一次的晶片2的供給(步驟SP07)。
如此，因熱固性樹脂30的揮發成分不會凝結或凝固於加熱工具7與附件8的間隙及/或吸引孔13、14及/或變換閥11a、11b，故即使是長時間的運轉，由加熱工具7到附件8的熱傳導不良也消失，不會招致安裝不良。而且，因揮發成分不會凝結或凝固於變換閥11a、11b，故可防止真空吸引的動作不良。
<實施的形態二>
其次，針對本發明的實施的形態二進行說明。實施的形態二與實施的形態一的不同為在實施的形態一使用的安裝裝置1的附件8的構成不同。顯示在實施的形態二使用的附件與加熱工具之概略側視圖於圖5。在實施的形態二的附件8未設有外部空氣導入溝8f與導入孔19。設於加熱工具7的導入孔18是當作使用被供給至空隙17的氣體(例如外部空氣)將加熱工具7冷卻的冷卻孔而使用。外部空氣供給孔31設於空隙17的上部。藉由自外部空氣供給孔31供給高流量的氣體，將加熱工具7的側面冷卻，能以短時間冷卻至規定的溫度。
顯示具備圖5的附件8的安裝裝置1之概略側視圖於圖6。外部空氣供給孔31連接於外部空氣供給泵32。在圖6所示的安裝裝置1中，在將晶片2安裝於基板3之後，斷開加熱工具7的供電，使接合工具4上升(實施的形態一的步驟SP07)，驅動外部空氣供給泵32，強制地將氣體(例如外部空氣)導入到空隙17。據此可更有效地冷卻加熱工具7。而且，斷開變換閥11a，晶片2的吸附保持被解除的附件8的周圍為氣體由外殼20與附件8的間隙之外殼20的下端20b洩漏而構成氣簾(air curtain)。據此，即使附件8的底面8b露出，由熱固性樹脂30的加熱所產生的揮發成分的附著或吸入也不發生。
<實施的形態三>
其次，針對本發明的實施的形態三使用圖7的概略側視圖進行說明。實施的形態三是在實施的形態二的安裝裝置1具備吸引噴嘴33與吸引泵34。吸引噴嘴33是可滑動於水平方向而構成。成為如下之構成:在晶片2與基板3的安裝完了，接合工具4上升的狀態下，吸引噴嘴33由基板3的側方移動，吸引由熱固性樹脂30的加熱所產生的揮發成分。附件8在到晶片2被供給至運送裝置為止之間位於基板3的上部，會受到揮發成分的影響。由於是附件8的底面8b露出的狀態，在由運送裝置到接受下一片晶片2為止之間，可藉由以吸引噴嘴33吸引漂浮於基板3與附件8的空間的揮發成分，防止揮發成分之附著或吸入到附件8。
<Formation 1>
The first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a side view of a mounting device according to a first embodiment of the present invention. In Fig. 1, the left-right direction of the mounting device 1 is the X-axis, the front-rear direction is the Y-axis, and the axis orthogonal to the XY plane formed by the X-axis and the Y-axis is the Z-axis (up-and-down direction), and the Z-axis is set. Rotate to the θ axis. 2 is a schematic perspective view showing the attachment tool 8 of the component and the heating tool 7 and the frame 6 disposed at intervals by the bonding tool 4 of the mounting device 1 on the lower side of the Z-axis. Further, the same symbols are used in the embodiment of the symbols of the machines used in the prior art.
The mounting device 1 is composed of a bonding tool 4 that presses the wafer 2 onto the substrate 3, and a substrate stage 5 that holds the substrate 3. The bonding tool 4 is configured to be movable in the Z-axis direction. The substrate stage 5 is configured to be movable in the X, Y-axis direction, and θ-axis direction.
As shown in Fig. 2, the bonding tool 4 is fixed to the bottom surface 6b of the frame 6 by a screw (not shown) on the top surface 7a of the heating tool 7. An attachment 8 is sucked and held on the bottom surface 7b of the heating tool 7. The wafer 2 is adsorbed and held on the bottom surface 8b of the attachment 8. As shown in FIG. 1, the frame 6 is provided with a suction hole 9 for vacuum suction. The suction hole 9 is connected to the suction pipe 10a, and is connected to a suction pump 12 via a change valve 11a. The suction pump 12 is provided with a changeover valve 11b as a system for attracting the attachment 8. The changeover valve 11b is connected to the suction hole 16 of the frame 6 via the suction pipe 10b. The operation and the stop of the vacuum suction are performed through the changeover valves 11a and 11b.
The heating tool 7 is provided with a suction hole 13 penetrating from the top surface 7a to the bottom surface 7b. Further, in the attachment 8, a suction hole 14 penetrating from the top surface 8a to the bottom surface 8b is also provided. Further, the suction holes 13 and 14 have a structure that communicates with the suction holes 9 of the frame 6. As shown in Fig. 2, a wafer adsorption groove 8c is provided on the bottom surface 8b of the attachment 8. A suction hole 14 is disposed in the vicinity of the center of the wafer adsorption groove 8c, and the wafer 2 is vacuum-adsorbed by the bottom surface 8b of the attachment 8.
An adsorption groove 7c that attracts the attachment 8 is provided on the bottom surface 7b of the heating tool 7. A suction hole 15 is provided in the adsorption groove 7c. The suction hole 15 is connected to the suction pipe 10b via the suction hole 16 inside the frame 6 (refer to FIG. 1).
The top surface 8a of the attachment 8 (the adsorption surface on the side of the heating tool 7) is processed to be flat. The bottom surface 8b is formed with a convex portion 8d in accordance with the size of the wafer 2. The outer periphery (the surface in contact with the top surface 2a of the wafer 2) of the convex portion 8d is processed to be flat, and the wafer adsorption groove 8c and the external air introduction groove 8f are formed inside.
As shown in FIG. 1, a frame covering the frame of the bonding tool 4 and the outer casing 20 of the heating tool 7 and the attachment 8 are disposed on the outer periphery of the bonding tool 4. The upper end 20a of the outer casing 20 is coupled to the upper portion of the bonding tool 4. The lower end 20b of the outer casing 20 is located on the side 8e of the attachment 8. A gas supply port 21 for supplying a gas from the outside is provided on the side surface 20c of the outer casing 20. A supply conduit 22 is connected to the gas supply port 21, and the other end of the supply conduit 22 is connected to the pressure pump 23. The pressurized pump 23 supplies a filtered gas (for example, air), and the inside of the casing 20 is a cleaned gas and is in a positive pressure state. The cleaned air leaks from the gap between the side 8e of the attachment 8 and the lower end 20b of the outer casing 20. The leaked air has an effect of air purge of the attachment 8 by an outgas floating around the attachment 8 (a volatile component generated by heating of the thermosetting resin 30).
A space 17 communicating with the inside of the outer casing 20 is provided at a position where the frame 6 is in contact with the top surface 7a of the heating tool 7. The heating tool 7 is provided with an introduction hole 18 that communicates with the gap 17. Further, an introduction hole 19 is also provided in the attachment 8. The gas that has entered the gap 17 is supplied to the external air introduction groove 8f provided in the attachment 8 through the introduction hole 18 and the introduction hole 19. The external air introduction groove 8f is provided outside the wafer adsorption groove 8c. In order to prevent the inhalation of the volatile component from the bottom surface 8b of the attachment 8, the introduction hole 19 is provided in the external air introduction groove 8f, and is connected to the gap 17 through the introduction hole 19 and the introduction hole 18. Since the side of the air gap 17 is in a positive pressure state outside the outer side of the attachment 8, the inside air introduction groove 8f also becomes a positive pressure. Therefore, the volatile component generated by the heating of the thermosetting resin 30 applied to the substrate 3 does not enter the air introduction groove 8f, and does not enter the wafer adsorption groove 8c and the wafer suction hole 14. Further, examples of the thermosetting resin 30 include a non-conductive paste or a conductive paste, a sheet-like non-conductive sheet, a conductive sheet, and the like. .
The flow of gas between the attachment 8 and the heating tool 7 will be described using FIG. The gas that has flowed into the gap 17 (arrow C in Fig. 4) flows through the introduction hole 18 and the introduction hole 19 to the outside air introduction groove 8f of the attachment 8. The gas of the outside air introduction groove 8f flows from the gap between the attachment 8 and the wafer 2 to the wafer adsorption groove 8c. The gas (arrow D in Fig. 4) flowing to the wafer adsorption groove 8c flows into the suction hole 14, and is sucked through the suction holes 13 and 9 (arrow E in Fig. 4). Further, a part of the gas covered by the outer casing 20 and in a positive pressure state flows in from the gap between the heating tool 7 and the attachment 8 (arrow F in FIG. 4), and is attracted through the suction holes 15 and 16 through the adsorption grooves 7c (FIG. 4). Arrow G).
The mounting method for mounting the wafer 2 on the substrate 3 using such a mounting device 1 will be described based on the flowchart of FIG.
First, the thermosetting resin 30 is applied to the mounting portion of the substrate 3, and the substrate is started to be held by the substrate platform 5 (step SP01).
Next, the wafer 2 is supplied to the attachment 8 of the bonding tool 4 through the wafer transfer device (step SP02). The top surface 2a of the wafer 2 is adsorbed and held on the bottom surface 8b of the attachment 8. The adsorption is performed by the suction pump 12 being driven, the shift valves 11a and 11b operating, and the wafer suction grooves 8c being vacuum-sucked through the suction pipes 10a and 10b and the suction holes 13 and 14.
Next, a recognition means of two fields of view (not shown) is inserted between the wafer 2 and the substrate 3, and image recognition is added to the alignment mark of the wafer 2 and the substrate 3 (step SP03) ). According to the image identification data of the alignment mark, the substrate stage 5 operates in the X, Y direction and the θ direction, and the alignment of the wafer 2 and the substrate 3 is performed.
Next, the heater of the heating tool 7 is heated to a predetermined temperature. Further, gas is supplied from the gas supply port 21 of the outer casing 20. The gas is supplied from the pressurizing pump 23 via the supply conduit 22 (step SP04). The supplied gas flows through the introduction holes 18, 19 through the gaps 17 provided in the bottom surface 6b of the frame 6 to the outside air introduction groove 8f of the attachment 8. Then, the outside air introduction groove 8f flows through the gap between the attachment 8 and the top surface 2a of the wafer 2 to the wafer adsorption groove 8c. Further, the supplied gas is also sucked by the gap between the bottom surface 7b of the heating tool 7 and the top surface 8a of the attachment 8.
Next, the bonding tool 4 is lowered to press the wafer 2 against the substrate 3. Since the heating tool 7 is heated, the thermosetting resin 30 applied to the substrate 3 is heated (step SP05). The volatilization generated by the heating of the thermosetting resin 30 is dispersed to the periphery of the wafer 2. Since the periphery of the bonding tool 4 is covered by the outer casing 20 and the inside of the outer casing 20 is held at a positive pressure, the volatile components emitted to the periphery of the wafer 2 do not intrude into the suction holes 15, 16. Since the wafer adsorption groove 8c is sucked by the vacuum, the gas supplied from the gas supply port 21 of the outer casing 20 is attracted. Therefore, even if the operation time of the mounting device 1 increases, the volatile component of the thermosetting resin 30 does not condense or solidify in the gap between the heating tool 7 and the attachment 8 and/or the suction holes 13, 14 and/or the changeover valves 11a, 11b.
Next, after the wafer 2 is pressed for a predetermined time, the change valve 11a is operated to stop the vacuum suction, and the adsorption holding of the wafer 2 by the attachment 8 is released (step SP06). Moreover, the temperature rise of the heating tool 7 is stopped. Even if the wafer 2 is removed by the attachment 8, the periphery of the wafer adsorption groove 8c is brought into a positive pressure state by the gas supplied from the external air introduction groove 8f provided on the outer periphery of the wafer adsorption groove 8c. Therefore, the emitted volatile components are not sucked into the wafer adsorption grooves 8c.
Next, the bonding tool 4 is raised to prepare the supply of the wafer 2 from the wafer transfer device next time (step SP07).
As described above, since the volatile component of the thermosetting resin 30 does not condense or solidify in the gap between the heating tool 7 and the attachment 8 and/or the suction holes 13 and 14 and/or the changeover valves 11a and 11b, even if it is operated for a long period of time, it is heated. The poor heat conduction from tool 7 to accessory 8 also disappears and does not cause poor installation. Further, since the volatile components do not condense or solidify in the changeover valves 11a and 11b, the malfunction of the vacuum suction can be prevented.
<Form 2 of the implementation>
Next, a second embodiment of the present invention will be described. The second embodiment and the first embodiment are different in the configuration of the attachment 8 of the mounting device 1 used in the first embodiment. A schematic side view of the attachment and the heating tool used in the second embodiment shown in Fig. 5 is shown. The external air introduction groove 8f and the introduction hole 19 are not provided in the attachment 8 of the second aspect of the embodiment. The introduction hole 18 provided in the heating tool 7 is used as a cooling hole for cooling the heating tool 7 using a gas (for example, outside air) supplied to the air gap 17. The external air supply hole 31 is provided in the upper portion of the gap 17. By supplying a high-flow gas from the outside air supply hole 31, the side surface of the heating tool 7 is cooled, and it can be cooled to a predetermined temperature in a short time.
A schematic side view showing the mounting device 1 having the attachment 8 of Fig. 5 is shown in Fig. 6. The external air supply hole 31 is connected to the external air supply pump 32. In the mounting device 1 shown in FIG. 6, after the wafer 2 is mounted on the substrate 3, the power supply of the heating tool 7 is turned off, the bonding tool 4 is raised (step SP07 of the first embodiment), and the external air supply pump 32 is driven. A gas (for example, outside air) is forcibly introduced into the gap 17. According to this, the heating tool 7 can be cooled more efficiently. Further, the switching valve 11a is opened, and the periphery of the attachment 8 in which the suction holding of the wafer 2 is released is such that the gas leaks from the lower end 20b of the outer casing 20 in the gap between the outer casing 20 and the attachment 8 to constitute an air curtain. According to this, even if the bottom surface 8b of the attachment 8 is exposed, the adhesion or inhalation of the volatile component by the heating of the thermosetting resin 30 does not occur.
<Form 3 of the implementation>
Next, a third aspect of the embodiment of the present invention will be described using a schematic side view of FIG. 7. In the third embodiment, the mounting device 1 of the second embodiment is provided with the suction nozzle 33 and the suction pump 34. The suction nozzle 33 is configured to be slidable in the horizontal direction. In the state in which the bonding of the wafer 2 and the substrate 3 is completed and the bonding tool 4 is raised, the suction nozzle 33 is moved from the side of the substrate 3, and the volatile component generated by the heating of the thermosetting resin 30 is sucked. The attachment 8 is located on the upper portion of the substrate 3 until the wafer 2 is supplied to the transport device, and is affected by the volatile component. Since the bottom surface 8b of the attachment 8 is exposed, the volatile component in the space floating in the substrate 3 and the attachment 8 can be sucked by the suction nozzle 33 between the transport device and the next wafer 2, thereby preventing the volatile component. Attach or inhale to attachment 8.
1．．．安裝裝置1. . . Mounting device
2．．．晶片2. . . Wafer
2a．．．晶片2的頂面2a. . . Top surface of wafer 2
3．．．基板3. . . Substrate
4．．．接合工具4. . . Bonding tool
5．．．基板平台5. . . Substrate platform
6．．．框架6. . . frame
6b．．．框架6的底面6b. . . Bottom of frame 6
7．．．加熱工具7. . . Heating tool
7a．．．加熱工具7的頂面7a. . . Top surface of heating tool 7
7b．．．加熱工具7的底面7b. . . Bottom of heating tool 7
7c．．．加熱工具7的吸附溝7c. . . Adsorption groove of heating tool 7
8．．．附件8. . . annex
8a．．．附件8的頂面8a. . . Top surface of Annex 8
8b．．．附件8的底面8b. . . Bottom of attachment 8
8c．．．附件8的側面8c. . . Side of attachment 8
8d．．．凸部8d. . . Convex
8e．．．附件8的側面8e. . . Side of attachment 8
8f．．．外部空氣導入溝8f. . . External air introduction groove
9、13、14、15、16．．．吸引孔9, 13, 14, 15, 16. . . Attraction hole
10a、10b．．．吸引管10a, 10b. . . Suction tube
11a、11b．．．變換閥11a, 11b. . . Change valve
12．．．吸入泵12. . . Suction pump
17．．．空隙17. . . Void
18、19．．．導入孔18, 19. . . Import hole
20．．．外殼20. . . shell
20a．．．外殼20的上端20a. . . Upper end of the outer casing 20
20b．．．外殼20的下端20b. . . Lower end of the outer casing 20
20c．．．外殼20的側面20c. . . Side of the outer casing 20
21．．．氣體供給口twenty one. . . Gas supply port
22．．．供給導管twenty two. . . Supply conduit
23．．．加壓泵twenty three. . . Pressurized pump
30．．．熱固性樹脂30. . . Thermosetting resin
31．．．外部空氣供給孔31. . . External air supply hole
32．．．外部空氣供給泵32. . . External air supply pump
33．．．吸引噴嘴33. . . Suction nozzle
34．．．吸引泵34. . . Suction pump
圖1是本發明的實施的形態一的安裝裝置之概略側視圖。
圖2是由下側看附件與加熱工具與框架之概略斜視圖。
圖3是顯示本發明的實施的形態的安裝裝置的概略動作流程之流程圖。
圖4是說明附件與加熱工具間的氣體的流動之圖。
圖5是在實施的形態二使用的附件與加熱工具之概略側視圖。
圖6是實施的形態二的安裝裝置之概略側視圖。
圖7是實施的形態三的安裝裝置之概略側視圖。
圖8是習知的安裝裝置之概略側視圖。
Fig. 1 is a schematic side view of a mounting device according to a first embodiment of the present invention.
Fig. 2 is a schematic perspective view of the attachment and the heating tool and the frame as seen from the lower side.
3 is a flow chart showing a schematic operation flow of a mounting device according to an embodiment of the present invention.
Figure 4 is a diagram illustrating the flow of gas between the attachment and the heating tool.
Fig. 5 is a schematic side view of the attachment and the heating tool used in the second embodiment.
Fig. 6 is a schematic side view of the mounting device of the second embodiment.
Fig. 7 is a schematic side view of the mounting device of the third embodiment.
Figure 8 is a schematic side view of a conventional mounting device.
1．．．安裝裝置1. . . Mounting device
2．．．晶片2. . . Wafer
2a．．．晶片2的頂面2a. . . Top surface of wafer 2
3．．．基板3. . . Substrate
4．．．接合工具4. . . Bonding tool
5．．．基板平台5. . . Substrate platform
6．．．框架6. . . frame
6b．．．框架6的底面6b. . . Bottom of frame 6
7．．．加熱工具7. . . Heating tool
7a．．．加熱工具7的頂面7a. . . Top surface of heating tool 7
8．．．附件8. . . annex
8a．．．附件8的頂面8a. . . Top surface of Annex 8
8b．．．附件8的底面8b. . . Bottom of attachment 8
8c．．．附件8的側面8c. . . Side of attachment 8
8d．．．凸部8d. . . Convex
8e．．．附件8的側面8e. . . Side of attachment 8
8f．．．外部空氣導入溝8f. . . External air introduction groove
9、13、14、15、16．．．吸引孔9, 13, 14, 15, 16. . . Attraction hole
10a、10b．．．吸引管10a, 10b. . . Suction tube
11a、11b．．．變換閥11a, 11b. . . Change valve
12．．．吸入泵12. . . Suction pump
17．．．空隙17. . . Void
18、19．．．導入孔18, 19. . . Import hole
20．．．外殼20. . . shell
20a．．．外殼20的上端20a. . . Upper end of the outer casing 20
20b．．．外殼20的下端20b. . . Lower end of the outer casing 20
20c．．．外殼20的側面20c. . . Side of the outer casing 20
21．．．氣體供給口twenty one. . . Gas supply port
22．．．供給導管twenty two. . . Supply conduit
23．．．加壓泵twenty three. . . Pressurized pump
30．．．熱固性樹脂30. . . Thermosetting resin
Claims (8)
接合工具包含:被升溫至規定的溫度之加熱工具，與吸附保持晶片之附件，與覆蓋接合工具外周，延伸至附件的側部之外殼，
在外殼的側面設有氣體供給口，
附件透過設於接合工具內的吸引孔真空吸引，
一邊由外殼側面的氣體供給口供給氣體，一邊將被吸附保持於附件的晶片安裝於基板。A mounting method for mounting a wafer on a substrate filled or provided with a thermosetting resin while heating a wafer that is adsorbed and held by the bonding tool.
The bonding tool includes: a heating tool that is heated to a predetermined temperature, an attachment that adsorbs and holds the wafer, and an outer casing that covers the outer periphery of the bonding tool and extends to the side of the attachment,
a gas supply port is provided on the side of the outer casing,
The attachment is vacuum-applied through a suction hole provided in the bonding tool.
The wafer which is adsorbed and held by the attachment is attached to the substrate while supplying gas from the gas supply port on the side surface of the casing.
接合工具，包含:被升溫至規定的溫度之加熱工具，與吸附保持晶片之附件，與覆蓋接合工具外周，延伸至附件的側部之外殼；以及
吸引孔，真空吸引附件，其中
在外殼側面設有氣體供給口而供給氣體。A mounting device for mounting a wafer on a substrate filled or disposed with a thermosetting resin while heating a wafer adsorbed and held by a bonding tool, comprising:
The bonding tool comprises: a heating tool heated to a predetermined temperature, an attachment for adsorbing and holding the wafer, and an outer casing covering the outer periphery of the bonding tool and extending to the side of the attachment; and a suction hole, a vacuum suction attachment, wherein the outer side of the outer casing is provided There is a gas supply port to supply gas.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011118745 | 2011-05-27 |
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| TW201248750A TW201248750A (en) | 2012-12-01 |
| TWI529829B true TWI529829B (en) | 2016-04-11 |
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| TW101118622A TWI529829B (en) | 2011-05-27 | 2012-05-25 | Installation method and installation device |
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| JP (1) | JP6038783B2 (en) |
| KR (1) | KR101974670B1 (en) |
| TW (1) | TWI529829B (en) |
| WO (1) | WO2012165313A1 (en) |
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| KR102039769B1 (en) * | 2012-10-23 | 2019-11-01 | 토레이 엔지니어링 컴퍼니, 리미티드 | Bonding tool cooling apparatus and bonding tool cooling method |
| US9484241B2 (en) * | 2013-07-29 | 2016-11-01 | Asm Technology Singapore Pte Ltd | Device for holding multiple semiconductor devices during thermocompression bonding and method of bonding |
| US9659902B2 (en) * | 2014-02-28 | 2017-05-23 | Kulicke And Soffa Industries, Inc. | Thermocompression bonding systems and methods of operating the same |
| JP5627057B1 (en) * | 2014-03-31 | 2014-11-19 | アルファーデザイン株式会社 | Component mounting equipment |
| WO2016152661A1 (en) * | 2015-03-20 | 2016-09-29 | 東レエンジニアリング株式会社 | Bonding tool cooling device, bonding device provided with same, and bonding tool cooling method |
| JP6836317B2 (en) * | 2015-10-16 | 2021-02-24 | 東レエンジニアリング株式会社 | Bonding head and mounting device |
| SG11201910002SA (en) | 2016-11-17 | 2019-11-28 | Shinkawa Kk | Mounting head |
| JP6307729B1 (en) * | 2016-11-30 | 2018-04-11 | 株式会社新川 | Bonding apparatus and bonding method |
| KR102347123B1 (en) * | 2017-03-24 | 2022-01-05 | 주식회사 미코세라믹스 | Bonding head and apparatus for bonding chips having the bonding head |
| US10700038B2 (en) * | 2017-08-25 | 2020-06-30 | Micron Technology, Inc. | Methods and systems for inhibiting bonding materials from contaminating a semiconductor processing tool |
| KR102115935B1 (en) * | 2017-09-01 | 2020-05-28 | 주식회사 에이치앤이루자 | Heater assembly |
| SG11202004896TA (en) * | 2017-09-28 | 2020-06-29 | Shinkawa Kk | Suction stage |
| JP6991614B2 (en) * | 2018-08-31 | 2022-01-12 | ボンドテック株式会社 | Component mounting system and component mounting method |
| CN111212489A (en) * | 2018-11-21 | 2020-05-29 | 南韩商H&世温股份有限公司 | Heater assembly |
| KR102191179B1 (en) * | 2019-02-07 | 2020-12-15 | (주)에이피텍 | Pulse heater power dispensing solution with alignment plate curing heater |
| KR102229860B1 (en) * | 2019-02-07 | 2021-03-19 | (주)에이피텍 | Cartridge integrated dispensing solution curing heater |
| KR102221704B1 (en) * | 2019-09-03 | 2021-03-02 | 세메스 주식회사 | Vacuum picker and die bonding apparatus including the same |
| KR102441538B1 (en) * | 2020-10-13 | 2022-09-07 | 정라파엘 | Bonding block and method of bonding a chip using the same |
| JP7456399B2 (en) * | 2021-02-12 | 2024-03-27 | 株式会社村田製作所 | Sheet conveying device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH06338543A (en) * | 1993-05-28 | 1994-12-06 | Hitachi Ltd | Bonding equipment |
| JPH07307364A (en) * | 1994-05-11 | 1995-11-21 | Hitachi Ltd | Lead bonding device |
| JPH07326643A (en) * | 1994-06-02 | 1995-12-12 | Fujitsu Ltd | Bonding head structure |
| JP3454154B2 (en) * | 1998-06-26 | 2003-10-06 | 松下電器産業株式会社 | Thermocompression device and thermocompression method for work |
| JP2000091384A (en) * | 1998-09-10 | 2000-03-31 | Casio Comput Co Ltd | Structure and method for bonding electronic component and thermocompression bonding equipment |
| JP3721559B2 (en) | 2002-03-28 | 2005-11-30 | 東レエンジニアリング株式会社 | Chip mounting method |
| JP2004119866A (en) * | 2002-09-27 | 2004-04-15 | Sanyo Electric Co Ltd | Collet chuck and element mounting method using the same |
| JP2010212274A (en) * | 2009-03-06 | 2010-09-24 | Nec Corp | Chip mounting machine and chip mounting method |
-
2012
- 2012-05-25 WO PCT/JP2012/063427 patent/WO2012165313A1/en active Application Filing
- 2012-05-25 JP JP2013518043A patent/JP6038783B2/en active Active
- 2012-05-25 TW TW101118622A patent/TWI529829B/en active
- 2012-05-25 KR KR1020137034093A patent/KR101974670B1/en active IP Right Grant
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| Publication number | Publication date |
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| KR101974670B1 (en) | 2019-05-02 |
| JP6038783B2 (en) | 2016-12-07 |
| WO2012165313A1 (en) | 2012-12-06 |
| KR20140045436A (en) | 2014-04-16 |
| TW201248750A (en) | 2012-12-01 |
| JPWO2012165313A1 (en) | 2015-02-23 |
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