JPH07326643A - Bonding head structure - Google Patents

Bonding head structure

Info

Publication number
JPH07326643A
JPH07326643A JP6120984A JP12098494A JPH07326643A JP H07326643 A JPH07326643 A JP H07326643A JP 6120984 A JP6120984 A JP 6120984A JP 12098494 A JP12098494 A JP 12098494A JP H07326643 A JPH07326643 A JP H07326643A
Authority
JP
Japan
Prior art keywords
semiconductor chip
bonding head
bonding
substrate
head structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6120984A
Other languages
Japanese (ja)
Inventor
Hidehiko Kira
秀彦 吉良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6120984A priority Critical patent/JPH07326643A/en
Publication of JPH07326643A publication Critical patent/JPH07326643A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/755Cooling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75743Suction holding means
    • H01L2224/75745Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Landscapes

  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

PURPOSE:To prevent adhesive agent used for reinforcing a semiconductor chip from flowing out and protruding, regarding bonding head structure for sucking, pressing, heating, and bonding a semiconductor chip when it is mounted on pads formed on a board. CONSTITUTION:In bonding head structure wherein a semiconductor chip 2 is sucked, pressed, heated, and bonded to a board 1 on which pads 7 are formed, refrigerant channels 4b, 4c for cooling reinforcing agent 10 which is used for the purpose of reinforcement when the semiconductor chip 2 is bonded to the board 1 are layed in the bonding head.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はボンディングヘッド構造
に係り、特に基板に形成されたパッドに半導体チップを
実装する際に、その半導体チップを吸着しながら加圧,
加熱してボンディング接合するボンディングヘッド構造
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding head structure, and in particular, when a semiconductor chip is mounted on a pad formed on a substrate, the semiconductor chip is pressed while being pressed,
The present invention relates to a bonding head structure for heating and bonding and bonding.

【0002】近年、電子機器の小型化,高密度化に伴っ
てベアチップ実装技術が開発されている。このベアチッ
プ実装とは半導体チップをパッケージに収納した状態で
基板に実装するのではなく、直接その半導体チップを基
板に実装するものである。また、ベアチップ実装といっ
てもバンプを用いて基板と半導体チップとの接合を行う
フリップチップタイプとワイヤを用いて基板と半導体チ
ップとの接合を行うワンヤボンディングタイプの二種類
があり、実装時に状況に応じて適宜選択されて採用され
ている。本発明では特にこのフリップチップタイプのベ
アチップ実装に関するものである。
In recent years, bare chip mounting technology has been developed along with miniaturization and high density of electronic devices. In this bare chip mounting, a semiconductor chip is not mounted on a substrate in a package, but the semiconductor chip is directly mounted on the substrate. In addition, there are two types of bare chip mounting, a flip chip type that uses bumps to join the substrate and the semiconductor chip, and a one-way bonding type that uses wires to join the substrate and the semiconductor chip. It is appropriately selected and adopted according to the situation. The present invention particularly relates to this flip chip type bare chip mounting.

【0003】[0003]

【従来の技術】まず、フリップチップタイプの半導体チ
ップ実装工程について図3を用いて説明する。
2. Description of the Related Art First, a flip chip type semiconductor chip mounting process will be described with reference to FIG.

【0004】まず半導体チップ30のパッド上にキャピ
ラリ31を用いたワイヤボンディング実装技術によりワ
イヤ(例えばアルミニウム,銅,金等)を用いてスタッ
ドバンプ(以下バンプと称する)32が所定数形成され
る。
First, a predetermined number of stud bumps (hereinafter referred to as bumps) 32 are formed on the pads of the semiconductor chip 30 using wires (for example, aluminum, copper, gold, etc.) by the wire bonding mounting technique using the capillaries 31.

【0005】この各バンプ32の高さは約20μm 程度
のバラツキがあるため、半導体チップ30のバンプ32
をガラス平板33に押しつけてレベリングを行い各バン
プ32の高さを揃える。
Since the height of each bump 32 has a variation of about 20 μm, the bumps 32 of the semiconductor chip 30 are different.
Are pressed against the glass flat plate 33 to perform leveling so that the bumps 32 have the same height.

【0006】続いて、予めガラス平板35(先のガラス
平板33と同様のものであってもよい)上に導電性接着
剤34が薄くスキージングされており、この導電性接着
剤34に各バンプ32を押しつけて付着させる転写が行
われる。
Subsequently, a conductive adhesive 34 is thinly squeezed on a glass flat plate 35 (which may be the same as the above-mentioned glass flat plate 33) in advance, and each bump is attached to the conductive adhesive 34. Transfer is performed by pressing 32 to attach.

【0007】一方、搭載される半導体チップ30のバン
プ32の数に対応して搭載パッド37が形成された基板
38上に、スクリーン印刷法により補強用として熱硬化
性の絶縁性接着剤36が塗布される。この基板38の上
方にボンディングヘッド(図示せず)で吸着された上記
半導体チップ30が移送される。
On the other hand, a thermosetting insulating adhesive 36 for reinforcement is applied by screen printing on a substrate 38 on which mounting pads 37 are formed corresponding to the number of bumps 32 of the semiconductor chip 30 to be mounted. To be done. The semiconductor chip 30 attracted by a bonding head (not shown) is transferred above the substrate 38.

【0008】そして、基板38の搭載パッド37と半導
体チップ30のバンプ32とをアラインメントし、ボン
ディングヘッドにより加圧,加熱して半導体チップ30
を基板38にフリップチップ接合と実装とを同時に行う
ものである。この場合、ボンディングヘッドには熱源が
具備されており、加熱により絶縁性接着剤を熱硬化させ
てフリップチップ接合を補強している。
Then, the mounting pads 37 of the substrate 38 and the bumps 32 of the semiconductor chip 30 are aligned, and the semiconductor chip 30 is pressurized and heated by the bonding head.
The flip chip bonding and the mounting are simultaneously performed on the substrate 38. In this case, the bonding head is equipped with a heat source, and the insulating adhesive is thermally cured by heating to reinforce the flip chip bonding.

【0009】このボンディングヘッドの従来例として図
4を用いて説明する。ボンディングヘッドには半導体チ
ップ41を吸着するための真空路47と、ボンディング
ヘッドと半導体チップ41との大きさの違いをカバーす
るアダプタ42を吸着するための真空路46が形成され
ている。更にこのボンディングヘッドにはヒータ44が
設けられており、このヒータ44は半導体チップ41を
基板40に接合する時の補強用となる熱硬化性の絶縁性
接着剤48を硬化させるためのものである。
A conventional example of this bonding head will be described with reference to FIG. The bonding head has a vacuum path 47 for sucking the semiconductor chip 41 and a vacuum path 46 for sucking the adapter 42 that covers the size difference between the bonding head and the semiconductor chip 41. Further, the bonding head is provided with a heater 44, and the heater 44 is for curing a thermosetting insulating adhesive 48 which serves as a reinforcement when the semiconductor chip 41 is bonded to the substrate 40. .

【0010】絶縁性接着剤48が硬化する時には接着剤
の流動性が上がり、接着剤が流れなすくなるという欠点
がある。接着剤は冷却すればその流動性が下降するため
ボンディングヘッドの外側からノズル45を用いて冷風
を噴射して直接接着剤を冷却してその流動が行われない
ようにしている。
When the insulative adhesive 48 is cured, the fluidity of the adhesive increases, and the adhesive does not flow smoothly. Since the fluidity of the adhesive decreases when cooled, the nozzle 45 blows cold air from the outside of the bonding head to directly cool the adhesive to prevent its flow.

【0011】[0011]

【発明が解決しようとする課題】しかしながら、冷風を
噴射するノズルによって絶縁性接着剤を直接冷却する
と、図3のように接着剤がはみ出し隣接部品の基板パッ
ド上に接着剤が飛散する恐れがある。
However, if the insulative adhesive is directly cooled by the nozzle for blowing cold air, the adhesive may stick out as shown in FIG. 3 and may be scattered on the board pad of the adjacent component. .

【0012】従って、本発明では半導体チップの補強用
として使用される接着剤の流れ出しによるはみ出しを防
止することを目的とするものである。
Therefore, it is an object of the present invention to prevent the adhesive used for reinforcing the semiconductor chip from flowing out due to the outflow.

【0013】[0013]

【課題を解決するための手段】上記目的は、パッド7が
形成された基板1に半導体チップ2を吸着しながら加
圧,加熱してボンディング接合するボンディングヘッド
構造において、前記基板1に前記半導体チップ2を接合
する時の補強用として使用される補強剤10を冷却する
冷媒流路4b,4cをボンディングヘッド内に埋設した
ことを特徴とするボンディングヘッド構造により、また
は、パッド7が形成された基板1に半導体チップ2を吸
着しながら加圧,加熱してボンデンィグ接合するボンデ
ィングヘッド構造において、前記基板1に前記半導体チ
ップ2を接合する時の補強用として使用される補強剤1
0の流動を防止する防護壁8cをボンディングヘッドに
設けたをことを特徴とするボンディングヘッド構造によ
って達成される。
The above-described object is to provide a bonding head structure in which a semiconductor chip 2 is adsorbed onto a substrate 1 on which a pad 7 is formed while being pressed and heated to bond the semiconductor chip 2 to the substrate 1. A substrate having a bonding head structure characterized in that coolant flow paths 4b and 4c for cooling a reinforcing agent 10 used for reinforcement when joining two are embedded in the bonding head, or a pad 7 is formed. Reinforcing agent 1 used for reinforcing when bonding the semiconductor chip 2 to the substrate 1 in a bonding head structure for bonding and bonding the semiconductor chip 2 to the substrate 1 while applying pressure and heat.
This is achieved by a bonding head structure characterized in that a protective wall 8c for preventing zero flow is provided on the bonding head.

【0014】[0014]

【作用】即ち、請求項1によれば、接着剤を直接冷風に
よって冷却するのではなく、ボンディングヘッド内にそ
の冷媒流路を形成することで間接冷風によって冷却する
ことができ、よって接着剤の流れ出しを防止することが
できる。
That is, according to the first aspect, the adhesive is not directly cooled by the cold air, but can be cooled by the indirect cold air by forming the cooling medium flow path in the bonding head. Runoff can be prevented.

【0015】また請求項2によれば、ボンディングヘッ
ドに設けた防護壁によってその接着剤の流れ出しを機械
的に防護することで、隣接する部品の方に接着剤が流れ
出すこともなくなる。
According to the second aspect of the invention, the protective wall provided on the bonding head mechanically protects the adhesive from flowing out, so that the adhesive does not flow out to the adjacent parts.

【0016】[0016]

【実施例】以下、本発明の望ましい実施例について図1
および図2を用いて説明する。尚、図1と図2を通じて
同一符号を付したものは同一対象物をそれぞれ示すもの
である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will now be described with reference to FIG.
And it demonstrates using FIG. The same reference numerals in FIGS. 1 and 2 denote the same objects.

【0017】まず本発明の第1の実施例について図1を
用いて説明する。表面にパッド6と導電性接着剤である
補強剤10が塗布された基板1に半導体チップ2を接合
する場合、その半導体チップ2をヘッドアダプタ3を介
してボンディングヘッド4によって吸着している。
First, a first embodiment of the present invention will be described with reference to FIG. When the semiconductor chip 2 is bonded to the substrate 1 on the surface of which the pad 6 and the reinforcing agent 10 which is a conductive adhesive are applied, the semiconductor chip 2 is adsorbed by the bonding head 4 via the head adapter 3.

【0018】特にこのヘッドアダプタ3はボンディング
ヘッド4と半導体チップ2の大きさが異なる場合にそれ
をカバーするためのものであり、半導体チップ2の大き
さによって適宜選択して使用されるものであり、更に、
このヘッドアダプタ3はボンディングヘッド4に形成さ
れた吸着用の真空路4aによって真空吸着されている。
In particular, the head adapter 3 is for covering the bonding head 4 and the semiconductor chip 2 when they are different in size, and is appropriately selected and used according to the size of the semiconductor chip 2. , In addition,
The head adapter 3 is vacuum-sucked by a suction vacuum path 4a formed in the bonding head 4.

【0019】またボンディングヘッド4には半導体チッ
プ2を同様に真空吸着するための真空路4dが形成され
ており、これによって半導体チップ2はボンディングヘ
ッド4に対して吸着された状態で基板1の所定位置に移
送されてくる。尚、ヘッドアダプタ3にぜ半導体チップ
2吸着用の穴3aが形成されている。
Further, the bonding head 4 is also formed with a vacuum path 4d for vacuum-sucking the semiconductor chip 2 in the same manner, whereby the semiconductor chip 2 is sucked to the bonding head 4 and predetermined on the substrate 1. It is transferred to the position. The head adapter 3 has a hole 3a for attracting the semiconductor chip 2.

【0020】半導体チップ2を基板1上の所定位置、つ
まり基板1に形成されたパッド7上に半導体チップ2の
バンプ6が当接される位置にアラインメントした状態
で、ヒータ5が形成されたボンディングヘッド4により
加圧,加熱してフリッフチップ接合が行われる。
Bonding with a heater 5 in a state where the semiconductor chip 2 is aligned at a predetermined position on the substrate 1, that is, a position where the bumps 6 of the semiconductor chip 2 are in contact with the pads 7 formed on the substrate 1. The head 4 pressurizes and heats so as to perform the frit chip bonding.

【0021】このボンディングヘッド4で加熱すること
により、前述した熱硬化性の導電性接着剤である補強剤
10を硬化させる。しかしこの補強剤10の加熱硬化時
の熱で流動性の高まる補強剤10の流動を冷却する必要
があり、この冷却を本実施例では、予めボンディングヘ
ッド4に冷風が流通する冷媒流路4b,4cを埋設して
形成しておき、この冷媒流路4b,4cによりボンディ
ングヘッド4とヘッドアダプタ3を介して間接冷却が行
われる。
By heating with this bonding head 4, the reinforcing agent 10 which is the above-mentioned thermosetting conductive adhesive is cured. However, it is necessary to cool the flow of the reinforcing agent 10 whose fluidity is increased by the heat when the reinforcing agent 10 is heated and hardened. In this embodiment, this cooling is performed in advance in the cooling medium passage 4b in which cold air flows through the bonding head 4. 4c is embedded and formed, and indirect cooling is performed by the coolant channels 4b and 4c via the bonding head 4 and the head adapter 3.

【0022】これにより、補強剤10を冷却することが
できるため、補強剤10の流れ出しを防止することがで
きる。次に本発明の第2の実施例について図2を用いて
説明する。
As a result, since the reinforcing agent 10 can be cooled, the reinforcing agent 10 can be prevented from flowing out. Next, a second embodiment of the present invention will be described with reference to FIG.

【0023】従来例および第1の実施例ではいずれも補
強剤を冷却することでその流れ出しを防止することを観
点にしていたが、第2の実施例では機械的に補強剤の流
れ出しを防止するものである。
In both the conventional example and the first embodiment, the reinforcement agent is cooled in order to prevent it from flowing out, but in the second embodiment, the reinforcement agent is mechanically prevented from flowing out. It is a thing.

【0024】つまり、ヘッドアダプタ3を吸着するボン
ディングヘッド8に、そのヘッドアダプタ3の外側に基
板1の表面に向かって延長された防護壁8cが形成され
ている。この防護壁8cによって熱硬化性の導電性接着
剤である補強剤10の流れ出しを防止するものである。
この防護壁8cは基板1と接するため、基板1へのダメ
ージを考慮すると、防護壁8cの先端8dに弾性体9を
形成しておくのが望ましい。
In other words, the bonding head 8 for attracting the head adapter 3 is provided with a protective wall 8c extending toward the surface of the substrate 1 outside the head adapter 3. The protective wall 8c prevents the reinforcing agent 10 which is a thermosetting conductive adhesive from flowing out.
Since the protective wall 8c is in contact with the substrate 1, it is desirable to form the elastic body 9 on the tip 8d of the protective wall 8c in consideration of damage to the substrate 1.

【0025】尚、ボンディングヘッド8に形成された真
空路である8aは半導体チップ2を真空吸着するための
ものであり、8bはヘッドアダプタ3を真空吸着するも
のである。ヘッドアダプタ3に形成された穴3aは半導
体チップ2をボンディングヘッド4に真空吸着させるた
めのものである。
A vacuum path 8a formed in the bonding head 8 is for vacuum-sucking the semiconductor chip 2, and a reference numeral 8b is for vacuum-sucking the head adapter 3. The hole 3a formed in the head adapter 3 is for vacuum-sucking the semiconductor chip 2 to the bonding head 4.

【0026】[0026]

【発明の効果】以上説明したように本発明によれば、半
導体チップ実装後の補強剤の流れ出しによるはみ出しを
防止することができるため、半導体チップ実装直後の洗
浄工程を削除することができる。
As described above, according to the present invention, it is possible to prevent the reinforcing agent from flowing out after the semiconductor chip is mounted, so that the cleaning step immediately after mounting the semiconductor chip can be eliminated.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.

【図2】本発明の第2の実施例を示す図である。FIG. 2 is a diagram showing a second embodiment of the present invention.

【図3】半導体チップ実装工程を示す図である。FIG. 3 is a diagram showing a semiconductor chip mounting process.

【図4】従来例を示す図である。FIG. 4 is a diagram showing a conventional example.

【符号の説明】[Explanation of symbols]

1 基板, 2 半導体チップ, 3 ヘッドアダプタ, 4,8 ボンディングヘッド, 4b,4c 冷媒流路, 5 ヒータ, 6 バンプ, 7 パッド, 8c 防護壁, 9 弾性体, 10 補強剤, 1 substrate, 2 semiconductor chips, 3 head adapters, 4, 8 bonding heads, 4b, 4c coolant passage, 5 heaters, 6 bumps, 7 pads, 8c protective wall, 9 elastic body, 10 stiffener,

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 パッド(7)が形成された基板(1)に
半導体チップ(2)を吸着しながら加圧,加熱してボン
ディング接合するボンディングヘッド構造において、 前記基板(1)に前記半導体チップ(2)を接合する時
の補強用として使用される補強剤(10)を冷却する冷
媒流路(4b,4c)をボンディングヘッド内に埋設し
たことを特徴とするボンディングヘッド構造。
1. A bonding head structure for bonding and bonding a semiconductor chip (2) to a substrate (1) on which a pad (7) is formed while adsorbing the semiconductor chip (2) by pressing and heating the semiconductor chip (2). A bonding head structure characterized in that a coolant flow path (4b, 4c) for cooling a reinforcing agent (10) used for reinforcement when joining (2) is embedded in the bonding head.
【請求項2】 パッド(7)が形成された基板(1)に
半導体チップ(2)を吸着しながら加圧,加熱してボン
デンィグ接合するボンディングヘッド構造において、 前記基板(1)に前記半導体チップ(2)を接合する時
の補強用として使用される補強剤(10)の流動を防止
する防護壁(8c)をボンディングヘッドに設けたをこ
とを特徴とするボンディングヘッド構造。
2. A bonding head structure for bonding and bonding a semiconductor chip (2) to a substrate (1) on which a pad (7) is formed by adsorbing and pressing the semiconductor chip (2), wherein the semiconductor chip is attached to the substrate (1). A bonding head structure characterized in that a protective wall (8c) for preventing the flow of a reinforcing agent (10) used for reinforcement when joining (2) is provided on the bonding head.
【請求項3】 前記防護壁(8c)の先端(8d)に弾
性体(9)を形成したことを特徴とする請求項2に記載
のボンディングヘッド構造。
3. The bonding head structure according to claim 2, wherein an elastic body (9) is formed at a tip (8d) of the protective wall (8c).
JP6120984A 1994-06-02 1994-06-02 Bonding head structure Withdrawn JPH07326643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6120984A JPH07326643A (en) 1994-06-02 1994-06-02 Bonding head structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6120984A JPH07326643A (en) 1994-06-02 1994-06-02 Bonding head structure

Publications (1)

Publication Number Publication Date
JPH07326643A true JPH07326643A (en) 1995-12-12

Family

ID=14799907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6120984A Withdrawn JPH07326643A (en) 1994-06-02 1994-06-02 Bonding head structure

Country Status (1)

Country Link
JP (1) JPH07326643A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351980A (en) * 2005-06-20 2006-12-28 Matsushita Electric Ind Co Ltd Thermo-compression tool for electronic component, and apparatus and method for mounting electronic component
US7357288B2 (en) 2003-07-17 2008-04-15 Matsushita Electric Industrial Co., Ltd. Component connecting apparatus
WO2012165313A1 (en) * 2011-05-27 2012-12-06 東レエンジニアリング株式会社 Mounting method and mounting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7357288B2 (en) 2003-07-17 2008-04-15 Matsushita Electric Industrial Co., Ltd. Component connecting apparatus
JP2006351980A (en) * 2005-06-20 2006-12-28 Matsushita Electric Ind Co Ltd Thermo-compression tool for electronic component, and apparatus and method for mounting electronic component
JP4539454B2 (en) * 2005-06-20 2010-09-08 パナソニック株式会社 Electronic component thermocompression bonding tool, electronic component mounting apparatus, and mounting method
WO2012165313A1 (en) * 2011-05-27 2012-12-06 東レエンジニアリング株式会社 Mounting method and mounting device
KR20140045436A (en) * 2011-05-27 2014-04-16 토레이 엔지니어링 컴퍼니, 리미티드 Mounting method and mounting device
JPWO2012165313A1 (en) * 2011-05-27 2015-02-23 東レエンジニアリング株式会社 Mounting method and mounting apparatus

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