JPH07307364A - Lead bonding device - Google Patents

Abstract

PURPOSE:To avoid a vaporized gas from adhering to a carrier tape and a semiconductor chip when bonding in the lead bonding step to junction a semiconductor chip with the carrier tape having a bonding agent layer. CONSTITUTION:Within the lead bonding device, a gas exhaust through hole 15 is made in at least one element out of the elements i.e., a bonding stage 1, a bonding tool 2 and a tape guide 3 so as to exhaust a gas near the junction part of a semiconductor chip with a carrier tape 9 in the bonding step. Otherwise, the gas passes through a gas through hole 16 provided in either one element out of said elements 1, 2, 3 so that the gas may be blown upon the part near the junction part to the inner lead on the semiconductor chip 4 and a heat resistant insulating carrier tape 9.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead bonding apparatus used for manufacturing a semiconductor device, and more particularly to TAB.
It relates (T ape A utomated B onding) scheme to a technology effectively applied to the inner lead bonding apparatus.

[0002]

The manufacture of TCP semiconductor device having a (T ape C arrier P ackage) structure, for electrically joining the electrode formed on the lead and the semiconductor chip formed on the heat insulating carrier tape There is a process called inner lead bonding, and an inner lead bonding device is known as a device for performing a bonding operation in this process. For example, there is an inner lead bonding apparatus using a collective bonding method.

A conventional inner lead bonding apparatus using the collective bonding method will be briefly described below.

First, the carrier tape set in the tape loader is fed out at a constant pitch by a sprocket wheel or the like via a tension pulley so that the surface on which the leads are formed faces upward, and is provided in the tape guide. It is inserted in the tape passage. When the bump corresponding to the desired bonding position in the inserted carrier tape reaches the tool entry / exit hole directly below the bonding tool, the movement of the carrier tape is stopped. Here, the recognition camera detects a plurality of points of the inner lead in the portion of the carrier tape located in the tool entry / exit hole, and recognizes the position of the bump of the inner lead. On the other hand, the semiconductor chips are placed one by one from the wafer on the chip tray or the adhesive sheet on the bonding stage by the pickup arm, and then moved to the lower surface of the carrier tape located in the tool inlet / outlet hole. In this way, at the stage where the bumps located in the tool entry / exit holes and the semiconductor chip face each other vertically, two points of the semiconductor chip mounted on the bonding stage are detected by the recognition camera, and the detection result and the Positioning is completed by correcting the relative position of the electrode on the chip with respect to the position of the bump based on the detected position of the bump that has been recognized.

Next, the heated bonding tool descends and enters the tool insertion / exit hole, and the carrier tape is heated and pressed to bond the carrier tape and the semiconductor chip. After this, the bonding tool rises and the carrier tape
Until the next bonding area reaches the tool entry / exit hole,
It will be sent again.

In the conventional inner lead bonding apparatus, by repeating the above-described bonding operation as one cycle, semiconductor chips are sequentially bonded to a large number of bonding areas provided on the carrier tape. The conventional inner lead bonding technique is described, for example, on pages 87 to 95 (reference 1) of “VLSI packaging technique (below)” issued by Nikkei BP.

However, in the above-mentioned conventional inner lead bonding apparatus, the bonding tool presses silicon pieces, dust, foreign matters, etc. adhered to the active surface of the semiconductor chip to the active surface of the semiconductor chip at the time of bonding, resulting in malfunction of the semiconductor device. There was a problem. As one of methods for dealing with this problem, for example, Japanese Patent Laid-Open No. 3-147342
As disclosed in Japanese Patent Publication (Reference 2), a gas discharge port is provided in the tape guide, and when the semiconductor chip is moved to the lower surface of the carrier tape, gas is discharged from the gas discharge port provided in the tape guide. A method has been devised in which silicon pieces, dust, foreign matter, and the like adhering to the active surface of the semiconductor chip are eliminated by spraying the silicon on the active surface of the semiconductor chip.

In the inner lead bonding apparatus described in Document 2, the gas is discharged by
It is a time point when the semiconductor chip is moved to the lower surface of the carrier tape, not a bonding time point.

[0009]

However, as a result of examining the above-mentioned prior art, the present inventor has found the following problems.

That is, in the above-mentioned conventional inner lead bonding apparatus, the structure of the carrier tape to be bonded is a three-layer structure of a heat-resistant insulating substrate tape-adhesive-copper foil (a copper foil is adhered to the substrate tape with an adhesive). Structure), the temperature of the carrier tape located in the tool inlet / outlet hole is high due to heating during bonding (temperature during heating is 50%).
(0 ° C), the adhesive is once vaporized and released,
Immediately cooled, it becomes a viscous substance and adheres to the peripheral edge of the tool guide hole of the tape guide. Then, as the number of times of bonding increases, the viscous substance accumulates, but it drops on the active surface of the carrier tape or the semiconductor chip due to vibrations etc. generated when the carrier tape is sent out. Then, there was a problem that it caused an inspection failure.

An object of the present invention is to bond the adhesive on the active surface of the semiconductor chip and on the carrier when the leads on the carrier tape having the adhesive layer are bonded to the semiconductor chip, and the adhesive that is vaporized by the heating during the bonding and is released from the carrier tape. An object of the present invention is to provide a technique capable of preventing the tape from being attached.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0013]

Among the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

That is, the means of (1) of the present invention is that the heat-resistant insulating carrier tape is heated and pressed onto the bonding stage and the semiconductor chip mounted on the bonding stage to heat the electrodes on the semiconductor chip and the heat-resistant insulating property. A bonding tool for collectively joining the leads formed on the carrier tape, and a tape passage through which the heat-resistant insulating carrier tape is inserted, and the bonding tool heats the heat-resistant insulating carrier tape to the semiconductor chip. In a lead bonding apparatus provided with a tape guide having a tool entry / exit hole through which the bonding tool comes in and out each time it is pressed, a gas is supplied to at least one of the bonding stage, the bonding tool, and the tape guide. A through hole for discharge is provided to When hot-pressing the heat-insulating carrier tape to the semiconductor chip by a ring tool,
It is provided with means for discharging the gas in the vicinity of the joint between the semiconductor chip and the heat-resistant insulating carrier tape through the gas discharging through hole.

The means (2) of the present invention comprises: a bonding stage; and a semiconductor chip mounted on the bonding stage, wherein a heat resistant insulating carrier tape is heated and pressed to form electrodes on the semiconductor chip and the heat resistant insulating carrier tape. A bonding tool for jointly bonding the leads formed on the substrate and a tape passage through which the heat resistant insulating carrier tape is inserted, and the bonding tool heats and presses the heat resistant insulating carrier tape onto the semiconductor chip. In a lead bonding apparatus having a tape guide having a tool entry / exit hole through which the bonding tool enters / exits, a gas supply is provided to at least one of the bonding stage, the bonding tool, and the tape guide. A through hole is provided for the bonding tool. By means of heating and pressing the heat-resistant insulating carrier tape on the semiconductor chip, a means for passing a gas through the gas supply through hole to blow the gas in the vicinity of the joint between the semiconductor chip and the heat-resistant insulating carrier tape is provided. Be prepared.

According to a third aspect of the present invention, in the lead bonding apparatus including the first aspect, at least one of the bonding stage, the bonding tool, and the tape guide is gas. A through hole for supply is provided, and when the heat resistant insulating carrier tape is pressed against the semiconductor chip by the bonding tool, a gas is passed through the through hole for gas supply and the gas is passed through the semiconductor chip and the heat resistant insulating carrier. It is provided with a means for spraying in the vicinity of the joint with the tape.

[0017]

According to the above-mentioned means, in the lead bonding of the carrier tape having the adhesive layer and the semiconductor chip, the adhesive vaporized by the heating at the time of bonding is carried to the place away from the tool inlet / outlet hole. No viscous substance adheres to the peripheral edge of the tool guide hole of the tape guide. As a result, it is possible to prevent the adhesive that is vaporized at the time of bonding and released from the carrier tape from adhering to the active surfaces of the carrier tape and the semiconductor chip.

[0018]

Embodiments of the present invention will now be described in detail with reference to the drawings. In all the drawings for explaining the embodiments, those having the same function are given the same name and the same reference numeral, and the repeated description thereof will be omitted.

Example 1 FIG. 3 shows Example 1 according to the present invention.
2 is a perspective view showing a schematic configuration of the lead bonding apparatus of FIG. 1, 1 is a bonding stage, 2 is a bonding tool, 3 is a tape guide, 3a is a tool insertion / extraction hole into which the bonding tool 2 is inserted / extracted during bonding, 4 is a semiconductor wafer, and 4a is Semiconductor chip, 5 is a bonding head,
6 is a guide support for supporting the tape guide 3, 7 is a sprocket wheel, 8 is a pickup arm, 9 is a carrier tape, 10 is an adhesive sheet on which the semiconductor wafer 4 is placed, 11 is a Z stage, 12 is a cleaning stage, 13 Is a grindstone, and 14 is an XY stage.

FIG. 4 is a diagram showing the structure of the carrier tape 9, and FIG. 4 (a) is a plan view of the side where leads are formed,
FIG. 6B is a sectional view near the device hole 9a at the position AA in FIG. In FIG. 4, 9a is a device hole, 9b is an outer lead hole, 9c is a sprocket hole, 9d ₁ is an inner lead (copper foil), 9d ₂
Is the outer lead (copper foil) (hereinafter, inner lead 9d
₁ and the outer lead 9d ₂ are collectively referred to as a lead), 9e is a test pad, 9f is a base tape, 9g is an adhesive layer, and 9h is a bump. As can be seen from the diagram (b), the carrier tape 9 has a three-layer structure including a lead, a base tape 9f, and an adhesive layer 9g.

FIG. 1 shows a tool entry / exit hole 3a which is a main part of the inner lead bonding apparatus of the first embodiment shown in FIG.
It is sectional drawing which shows the structure of the vicinity, 2a is a heater, 3b
Is a tape passage provided in the tape guide 3 through which the carrier tape 9 is passed, 15 is a gas discharge through hole, and 16 is a gas supply through hole. Among the gas discharge through holes 15, those provided in the tape guide 3 are circular openings along the test pads 9e arranged vertically with respect to the direction of the position AA shown in FIG. 4 (a). Is a plurality of through holes having a plurality of parts arranged side by side, and passes through the inside of the tape guide 3 to form the guide support 6
After extending toward the tape guide 3, the tape guide 3 is connected to a gas suction device (not shown) via a discharge pipe (not shown). Of the gas discharge through holes 15, those having an opening in the bonding tool 2 extend toward the bonding head 5 through the inside of the bonding tool 2, and after the bonding tool 2 and the bonding head 5 are sequentially penetrated, a discharge pipe is formed. It is connected to the gas suction device via (not shown). Gas supply hole 16
Is a through hole 15 for gas discharge provided in the tape guide 3.
4A, a plurality of through-holes in which a plurality of circular openings are lined up along the test pad 9e lined up perpendicularly to the position AA line direction shown in FIG. The portion is provided at a position closer to the carrier tape 9 than the through hole 15 for discharging gas, extends through the inside of the tape guide 3 toward the guide support 6 and penetrates the tape guide 3, and then the supply pipe (shown in the figure). Is omitted) and is connected to a gas discharger (not shown). Both the gas suction device and the gas discharge device described above are set to operate in response to the bonding operation of the bonding tool 2.

The operation of the lead bonding apparatus of the first embodiment will be described below.

First, the carrier tape 9 set in a loader (not shown) is rotated by a sprocket wheel 7 at a constant pitch via a tension pulley (not shown) so that the surface on which the leads are formed faces upward. It is sent out and inserted into the tape passage 3b provided in the tape guide 3. The sprocket wheel 7 is provided with a large number of small protrusions (not shown), and each of the small protrusions meshes with the sprocket hole 9c to rotate the sprocket wheel 7, whereby the carrier tape 9 is removed. It is designed to be sent from the loader side to the unloader side.

Next, of the inserted carrier tape 9,
When the desired bonding position near the device hole 9a reaches the tool entry / exit hole 3a directly below the bonding tool 2, the movement of the carrier tape 9 is stopped.
Here, a plurality of points of the inner lead 9d _{1 in} the portion of the carrier tape 9 located in the tool entry / exit hole 3a are detected by a recognition camera (not shown), and the inner lead 9d _{1 is} detected.
The position of the tip bump 9h is recognized. On the other hand, the semiconductor chips 4a are adsorbed one by one from the semiconductor wafer 4 on the adhesive sheet 10 to the pickup arm 8 and transferred onto the bonding stage 1, and subsequently, the XY stage 14 is moved in the horizontal direction, so that the semiconductor chips The tip 4a moves below the carrier tape 9 located in the tool inlet / outlet hole 3a. Thus, the carrier tape 9 located in the tool entry / exit hole 3a
Of the semiconductor chip 4 mounted on the bonding stage 1 by the recognition camera when the desired bonding range and the semiconductor chip 4a face each other in the vertical direction.
Two points of a are detected. Based on this detection result and the detection result of the position of the bump 9h whose position is recognized, the semiconductor chip 4
The relative positional deviation between the electrode on the a and the bump 9h in the horizontal direction is calculated, and based on this calculation, the XY stage 14 is slightly moved to correct the positional deviation between the electrode and the bump 9h. Then, the Z stage 11 moves vertically upward, the electrodes and the bumps 9h are brought into close proximity to each other, and the positioning between the electrodes and the bumps 9h is completed.

Next, the bonding tool 2 heated by the heater 2a descends and enters the tool inlet / outlet hole 3a,
The carrier tape 9 is heated and pressed to bond the semiconductor chip 4a and the carrier tape 9 together. At this time, the gas in the vicinity of the joint between the semiconductor chip 4a and the carrier tape 9 is sucked by the gas suction device and discharged through the gas discharging through hole 15, and the air is discharged by the gas discharging device. It is passed through 16 and is sprayed vigorously near the joint. FIG. 1 shows such a situation, and the arrow in FIG. 1 indicates the flow of gas at the time of bonding.

When the semiconductor chip 4a and the carrier tape 9 are bonded in this way, the bonding tool 2 rises, and the carrier tape 9 is moved to the unloader side again until the next bonding position reaches the tool entry / exit hole 3a. Sent out. After that, by repeating the above-described bonding operation as one cycle, the semiconductor chips 4a are sequentially bonded to the bonding positions near the many device holes 9a provided on the carrier tape 9.

The set number (for example, 50 to 100)
When the (bonding) times have been completed, the bonding operation is temporarily stopped and the tool cleaning operation is started. That is, the bonding tool 2 is attached to the cleaning stage 1
Then, the tip of the bonding tool 2 is pressed against the grindstone 13 for a set time, and the tip of the bonding tool 2 is cleaned.

As can be seen from the above description, the first embodiment
According to this lead bonding apparatus, the following effects can be obtained.

That is, the components of the adhesive evaporate from the adhesive layer 9g of the carrier tape 9 due to the heating at the time of bonding and float in the vicinity of the joint portion, but a part of this vapor is taken into the gas discharge hole 15, The other part is carried to a place away from the tool inlet / outlet hole 3a by blowing the air discharged from the gas supply hole 16 to the vicinity of the joint portion, so that the vapor of the adhesive is used in the tool inlet / outlet hole of the tape guide 3. It does not adhere to the periphery of 3a as a viscous substance. Therefore, it is possible to prevent the adhesive, which is vaporized at the time of bonding and released from the carrier tape 9, from adhering to the test pad 9e of the carrier tape 9 and the active surface of the semiconductor chip 4a. This reduces the occurrence of defects in the subsequent inspection process and improves the product throughput.

Further, since the vaporized adhesive does not adhere to the tape guide 9, the frequency of cleaning the tape guide 9 decreases,
The operating rate of equipment is improved.

(Embodiment 2) FIG. 2 is a cross-sectional view showing a structure around a tool inlet / outlet hole 3a which is a main part of a lead bonding apparatus according to a second embodiment of the present invention. Except for the point that 16 is provided, it is exactly the same as the first embodiment. Further, the schematic configuration of the apparatus is as shown in FIG. 3 similarly to the first embodiment, and the bonding operation is exactly the same as the first embodiment. The gas supply through hole 16 newly provided in the bonding stage 1 in the second embodiment is a through hole having a plurality of circular openings on the upper surface of the bonding stage 1 so as not to be hidden by the semiconductor chip 4a. Has become
After sequentially penetrating the bonding stage 1 and the Z stage 11, the same gas discharger as the gas discharger to which the gas supply hole 16 provided in the tape guide 3 is connected via a supply pipe (not shown). It is connected to the.

Therefore, according to the lead bonding apparatus of the second embodiment, it is clear that the same effect as the first embodiment can be obtained.

Although the present invention has been specifically described based on the embodiments, it is needless to say that the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention.

[0034]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

(1) It is possible to prevent the adhesive from adhering to the test pad of the carrier tape and the active surface of the semiconductor chip, reduce the occurrence of defects in the subsequent inspection process, and improve the throughput.

(2) Since the vaporized adhesive does not adhere to the tape guide, the frequency of cleaning the tape guide can be reduced and the operating rate of the equipment can be improved.

[Brief description of drawings]

FIG. 1 is a sectional view showing a state near a tool inlet / outlet hole, which is a main part of a lead bonding apparatus according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a state near a tool entry / exit hole which is a main part of a lead bonding apparatus according to a second embodiment of the present invention.

FIG. 3 is a perspective view showing a schematic configuration of a lead bonding apparatus of Examples 1 and 2 according to the present invention.

FIG. 4 is a diagram showing a configuration of a carrier tape used for bonding in Examples 1 and 2 according to the present invention, FIG. 4A is a plan view of a side of a carrier tape on which leads are formed, and FIG. [Fig. 4] is a cross-sectional view of the carrier tape near the device hole.

[Explanation of symbols]

1 ... Bonding stage, 2 ... Bonding tool, 2a ... Heater, 3 ... Tape guide, 3a ... Tool entry / exit hole, 3b ... Tape passage, 4 ... Semiconductor wafer, 4a ... Semiconductor chip, 5 ... Bonding head, 6 ... Guide support , 7 ... sprocket wheels, 8 ... pickup arm, 9 ... carrier tape, 9a ... device hole, 9b ... outer lead holes, 9c ... sprocket holes, 9d ₁ ... inner lead, 9d ₂ ... outer leads, 9e ... test pad, 9f … Base tape, 9g… Adhesive layer,
9h ... bumps, 10 ... adhesive sheet, 11 ... Z stage, 12 ... cleaning stage, 13 ... grindstone,
14 ... XY stage, 15 ... Gas discharge through hole, 1
6 ... Through holes for gas supply.

Claims (3)

[Claims] 1. A bonding stage and a semiconductor chip mounted on the bonding stage are heated and pressed against a heat-resistant insulating carrier tape to collectively bond electrodes on the semiconductor chip and leads formed on the heat-resistant insulating tape. A bonding tool and a tape passage through which the heat-resistant insulating carrier tape is inserted, and a tool into and out of which the bonding tool is inserted each time the heat-resistant insulating carrier tape is pressed against the semiconductor chip by the bonding tool. A lead bonding apparatus comprising: a tape guide having an insertion / extraction hole, wherein the bonding stage, the bonding tool,
A gas discharge through hole is provided in at least one of the three tape guides, and the semiconductor chip and the heat-resistant insulation are provided when the heat-resistant insulating carrier tape is pressed against the semiconductor chip by the bonding tool. A lead bonding apparatus comprising means for discharging gas in the vicinity of a junction with a conductive carrier tape through the gas discharging through hole. 2. A bonding stage, an electrode on the semiconductor chip and a lead formed on the heat resistant insulating carrier tape are collectively formed by heating and pressing the heat resistant insulating carrier tape against the semiconductor chip mounted on the bonding stage. A bonding tool for bonding, and a tape passage through which the heat-resistant insulating carrier tape is inserted, and
In a lead bonding apparatus comprising: a tape guide having a tool insertion / extraction hole into / from which the bonding tool is inserted / extracted each time the heat resistant insulating carrier tape is heated and pressed onto the semiconductor chip by the bonding tool, the bonding stage, the bonding tool,
A gas supply through hole is provided in at least one of the three tape guides, and the gas supply through hole is provided when the heat resistant insulating carrier tape is pressed against the semiconductor chip by the bonding tool. A lead bonding apparatus comprising means for passing a gas through and spraying the gas in the vicinity of the joint between the semiconductor chip and the heat-resistant insulating carrier tape. 3. The lead bonding apparatus according to claim 1, wherein the bonding stage, the bonding tool,
A gas supply through hole is provided in at least one of the three tape guides, and the gas supply through hole is provided when the heat resistant insulating carrier tape is pressed against the semiconductor chip by the bonding tool. A lead bonding apparatus comprising means for passing a gas through and spraying the gas in the vicinity of the joint between the semiconductor chip and the heat-resistant insulating carrier tape.