TWI528604B - 發光、光伏或其它電子裝置及系統 - Google Patents
發光、光伏或其它電子裝置及系統 Download PDFInfo
- Publication number
- TWI528604B TWI528604B TW099130994A TW99130994A TWI528604B TW I528604 B TWI528604 B TW I528604B TW 099130994 A TW099130994 A TW 099130994A TW 99130994 A TW99130994 A TW 99130994A TW I528604 B TWI528604 B TW I528604B
- Authority
- TW
- Taiwan
- Prior art keywords
- conductor
- substrate
- conductors
- diodes
- exemplary
- Prior art date
Links
- 239000004020 conductor Substances 0.000 claims description 666
- 239000000758 substrate Substances 0.000 claims description 527
- 229920000642 polymer Polymers 0.000 claims description 145
- 239000004065 semiconductor Substances 0.000 claims description 98
- 239000012212 insulator Substances 0.000 claims description 90
- 239000000463 material Substances 0.000 claims description 79
- 150000001875 compounds Chemical class 0.000 claims description 46
- 239000002019 doping agent Substances 0.000 claims description 43
- 230000008878 coupling Effects 0.000 claims description 34
- 238000010168 coupling process Methods 0.000 claims description 34
- 238000005859 coupling reaction Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000000123 paper Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 229920003023 plastic Polymers 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000004033 plastic Substances 0.000 claims description 16
- 238000005286 illumination Methods 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000000969 carrier Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- -1 poster board Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 239000011111 cardboard Substances 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 210000004508 polar body Anatomy 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000002023 wood Substances 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims description 2
- 239000005060 rubber Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 265
- 239000010410 layer Substances 0.000 description 138
- 238000000034 method Methods 0.000 description 85
- 238000000151 deposition Methods 0.000 description 77
- 239000000976 ink Substances 0.000 description 68
- 238000007639 printing Methods 0.000 description 60
- 238000000576 coating method Methods 0.000 description 52
- 239000011230 binding agent Substances 0.000 description 47
- 239000011248 coating agent Substances 0.000 description 40
- 230000008569 process Effects 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 32
- 229920003002 synthetic resin Polymers 0.000 description 27
- 239000000725 suspension Substances 0.000 description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 20
- 230000008021 deposition Effects 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 20
- 230000001788 irregular Effects 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- 229910021393 carbon nanotube Inorganic materials 0.000 description 13
- 239000002041 carbon nanotube Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 13
- 238000001723 curing Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000005275 alloying Methods 0.000 description 7
- 239000007767 bonding agent Substances 0.000 description 7
- 210000004027 cell Anatomy 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 230000006835 compression Effects 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000000499 gel Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 238000005459 micromachining Methods 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 238000001429 visible spectrum Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000004512 die casting Methods 0.000 description 4
- BNMYXGKEMMVHOX-UHFFFAOYSA-N dimethyl butanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCC(=O)OC.COC(=O)CCCC(=O)OC BNMYXGKEMMVHOX-UHFFFAOYSA-N 0.000 description 4
- 238000004146 energy storage Methods 0.000 description 4
- 150000002484 inorganic compounds Chemical class 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 229920006309 Invista Polymers 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000007646 gravure printing Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000012798 spherical particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 241001479434 Agfa Species 0.000 description 2
- 241000579895 Chlorostilbon Species 0.000 description 2
- UDSFAEKRVUSQDD-UHFFFAOYSA-N Dimethyl adipate Chemical compound COC(=O)CCCCC(=O)OC UDSFAEKRVUSQDD-UHFFFAOYSA-N 0.000 description 2
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- SQNMYOLYEWHUCQ-UHFFFAOYSA-N acetic acid;methoxymethane;propane-1,2-diol Chemical compound COC.CC(O)=O.CC(O)CO SQNMYOLYEWHUCQ-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- FSCIDASGDAWVED-UHFFFAOYSA-N dimethyl hexanedioate;dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC.COC(=O)CCCCC(=O)OC FSCIDASGDAWVED-UHFFFAOYSA-N 0.000 description 2
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052876 emerald Inorganic materials 0.000 description 2
- 239000010976 emerald Substances 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002608 ionic liquid Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004816 latex Substances 0.000 description 2
- 229920000126 latex Polymers 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007649 pad printing Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000013500 performance material Substances 0.000 description 2
- QZRXRMPNCPCMSW-UHFFFAOYSA-N phosphanyl(phosphanylidene)phosphane Chemical compound PP=P QZRXRMPNCPCMSW-UHFFFAOYSA-N 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 239000011092 plastic-coated paper Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007651 thermal printing Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- PAAZPARNPHGIKF-UHFFFAOYSA-N 1,2-dibromoethane Chemical compound BrCCBr PAAZPARNPHGIKF-UHFFFAOYSA-N 0.000 description 1
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229920002907 Guar gum Polymers 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000012412 chemical coupling Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000665 guar gum Substances 0.000 description 1
- 235000010417 guar gum Nutrition 0.000 description 1
- 229960002154 guar gum Drugs 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 210000001589 microsome Anatomy 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011087 paperboard Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000006223 plastic coating Substances 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical group COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010019 resist printing Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000012056 semi-solid material Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- SITVSCPRJNYAGV-UHFFFAOYSA-L tellurite Chemical compound [O-][Te]([O-])=O SITVSCPRJNYAGV-UHFFFAOYSA-L 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Device Packages (AREA)
- Photovoltaic Devices (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/560,340 US8384630B2 (en) | 2007-05-31 | 2009-09-15 | Light emitting, photovoltaic or other electronic apparatus and system |
US12/560,334 US8395568B2 (en) | 2007-05-31 | 2009-09-15 | Light emitting, photovoltaic or other electronic apparatus and system |
US12/560,371 US8133768B2 (en) | 2007-05-31 | 2009-09-15 | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US12/560,355 US8456392B2 (en) | 2007-05-31 | 2009-09-15 | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US12/560,364 US8456393B2 (en) | 2007-05-31 | 2009-09-15 | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201133958A TW201133958A (en) | 2011-10-01 |
TWI528604B true TWI528604B (zh) | 2016-04-01 |
Family
ID=43758987
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099130997A TWI539631B (zh) | 2009-09-15 | 2010-09-14 | 製造發光、光伏或其它電子裝置及系統的方法 |
TW099130994A TWI528604B (zh) | 2009-09-15 | 2010-09-14 | 發光、光伏或其它電子裝置及系統 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099130997A TWI539631B (zh) | 2009-09-15 | 2010-09-14 | 製造發光、光伏或其它電子裝置及系統的方法 |
Country Status (14)
Country | Link |
---|---|
EP (1) | EP2478290A4 (pt) |
JP (1) | JP2013504861A (pt) |
KR (1) | KR20120093880A (pt) |
CN (1) | CN102695914B (pt) |
AU (1) | AU2010295691B2 (pt) |
BR (1) | BR112012008351A2 (pt) |
CA (1) | CA2772919A1 (pt) |
IL (2) | IL218610A (pt) |
MX (1) | MX2012003279A (pt) |
RU (1) | RU2012114787A (pt) |
SG (1) | SG179078A1 (pt) |
TW (2) | TWI539631B (pt) |
WO (1) | WO2011034908A1 (pt) |
ZA (1) | ZA201201893B (pt) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2599370T3 (es) | 2011-06-23 | 2017-02-01 | Big Solar Limited | Método para fabricar una estructura que comprende etapas de recubrimiento y dispositivo correspondiente |
US9396932B2 (en) * | 2014-06-04 | 2016-07-19 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
EP3629392B1 (en) * | 2012-10-11 | 2022-09-21 | The Regents Of The University Of Michigan | Organic photosensitive devices with reflectors |
GB201301683D0 (en) | 2013-01-30 | 2013-03-13 | Big Solar Ltd | Method of creating non-conductive delineations with a selective coating technology on a structured surface |
JP6024529B2 (ja) * | 2013-03-11 | 2016-11-16 | 株式会社豊田自動織機 | 太陽電池モジュール、および太陽電池モジュールの製造方法 |
US9525097B2 (en) * | 2013-03-15 | 2016-12-20 | Nthdegree Technologies Worldwide Inc. | Photovoltaic module having printed PV cells connected in series by printed conductors |
ES2952036T3 (es) * | 2013-06-12 | 2023-10-26 | Rohinni Inc | Teclado de retroiluminación con fuentes generadoras de luz depositadas |
US10319754B2 (en) | 2014-06-04 | 2019-06-11 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
JP6231641B2 (ja) * | 2015-10-09 | 2017-11-15 | ディフテック レーザーズ インコーポレイテッド | 電子デバイスおよびそれを作製する方法 |
US10629393B2 (en) | 2016-01-15 | 2020-04-21 | Rohinni, LLC | Apparatus and method of backlighting through a cover on the apparatus |
GB2549134B (en) | 2016-04-07 | 2020-02-12 | Power Roll Ltd | Asymmetric groove |
GB2549132A (en) | 2016-04-07 | 2017-10-11 | Big Solar Ltd | Aperture in a semiconductor |
GB2549133B (en) | 2016-04-07 | 2020-02-19 | Power Roll Ltd | Gap between semiconductors |
US20190221780A1 (en) * | 2016-06-03 | 2019-07-18 | Corning |ncorporated | Light extraction apparatus and methods for oled displays and oled displays using same |
JP6857517B2 (ja) * | 2016-06-16 | 2021-04-14 | ディフテック レーザーズ インコーポレイテッド | 基板上に結晶アイランドを製造する方法 |
DE102017115533A1 (de) | 2016-07-12 | 2018-01-18 | Dynamic Solar Systems Ag | Raumtemperatur-Druckverfahren zur Herstellung einer PV-Schichtfolge und verfahrensgemäß erhaltene PV-Schichtfolge |
CN107833525B (zh) * | 2016-09-15 | 2020-10-27 | 伊乐视有限公司 | 发光显示器的流体组装的系统和方法 |
GB201617276D0 (en) | 2016-10-11 | 2016-11-23 | Big Solar Limited | Energy storage |
KR20190099004A (ko) * | 2016-12-16 | 2019-08-23 | 테소로 사이언티픽, 인코포레이티드 | 발광 다이오드 테스트 장치 및 제조 방법 |
DE102017112668A1 (de) * | 2017-06-08 | 2018-12-13 | Aixtron Se | Verfahren zum Abscheiden von OLEDs |
KR101961834B1 (ko) * | 2017-11-06 | 2019-03-26 | 전북대학교산학협력단 | Led 디스플레이 장치 제조방법 |
CN108231969A (zh) * | 2017-12-30 | 2018-06-29 | 聚灿光电科技股份有限公司 | Led外延结构、led芯片及其制备方法 |
JP7054802B2 (ja) * | 2018-05-28 | 2022-04-15 | パナソニックIpマネジメント株式会社 | 表示基板およびled素子の実装方法 |
CN110277053B (zh) * | 2019-06-25 | 2020-12-08 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法、驱动方法、显示装置 |
CN110828517A (zh) * | 2019-11-08 | 2020-02-21 | 京东方科技集团股份有限公司 | 显示基板及其制作方法、显示装置 |
KR20210111919A (ko) * | 2020-03-03 | 2021-09-14 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR102500233B1 (ko) | 2021-11-12 | 2023-02-16 | (주)소프트피브이 | 코어쉘 구조의 광발전 파티클을 포함하는 반도체 패키징 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6510096A (pt) * | 1965-08-04 | 1967-02-06 | ||
US4919506A (en) * | 1989-02-24 | 1990-04-24 | General Electric Company | Single mode optical fiber coupler |
US7482764B2 (en) * | 1997-08-26 | 2009-01-27 | Philips Solid-State Lighting Solutions, Inc. | Light sources for illumination of liquids |
JPH11202140A (ja) * | 1998-01-08 | 1999-07-30 | Fujitsu Ltd | 光送受信デバイス及びその製造方法 |
US6476886B2 (en) * | 1999-02-15 | 2002-11-05 | Rainbow Displays, Inc. | Method for assembling a tiled, flat-panel microdisplay array |
WO2001008228A1 (fr) * | 1999-07-26 | 2001-02-01 | Labosphere Institute | Lentille en masse, corps luminescent, dispositif d'eclairage et systeme d'information optique |
JP2001210843A (ja) * | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
TW525213B (en) * | 2000-02-16 | 2003-03-21 | Hitachi Ltd | Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units |
US20010048968A1 (en) * | 2000-02-16 | 2001-12-06 | Cox W. Royall | Ink-jet printing of gradient-index microlenses |
US6441298B1 (en) * | 2000-08-15 | 2002-08-27 | Nec Research Institute, Inc | Surface-plasmon enhanced photovoltaic device |
AT410266B (de) * | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | Lichtquelle mit einem lichtemittierenden element |
TW552726B (en) * | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
AU2002255303B2 (en) * | 2002-05-02 | 2006-07-06 | Sphelar Power Corporation | Light-Receiving panel or light-emitting panel, and manufacturing method thereof |
JP3993475B2 (ja) * | 2002-06-20 | 2007-10-17 | ローム株式会社 | Ledチップの実装構造、およびこれを備えた画像読み取り装置 |
US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
TW560697U (en) * | 2002-11-26 | 2003-11-01 | Topson Technology Co Ltd | Surface-mounting type light-emitting diode structure |
JP2005175417A (ja) * | 2003-07-28 | 2005-06-30 | Ricoh Co Ltd | 発光素子アレイ、光書込ユニットおよび画像形成装置 |
CN1864027B (zh) * | 2003-10-06 | 2010-08-25 | 照明管理解决方案有限公司 | 使用发光二极管的改良光源和从中采集辐射能量的改良方法 |
US7279346B2 (en) * | 2004-03-31 | 2007-10-09 | Cree, Inc. | Method for packaging a light emitting device by one dispense then cure step followed by another |
US7538756B2 (en) * | 2004-12-17 | 2009-05-26 | Eastman Kodak Company | Methods for making display |
DE102007015233A1 (de) * | 2007-03-29 | 2008-10-02 | Osram Gesellschaft mit beschränkter Haftung | Leuchtdiodenlampe, Leuchte mit einer Leuchtdiodenlampe, Verfahren zum Betrieb einer Leuchte und Verfahren zur Erzeugung einer elektrischen Verlustleistung bei einer Leuchtdiodenlampe |
US8889216B2 (en) * | 2007-05-31 | 2014-11-18 | Nthdegree Technologies Worldwide Inc | Method of manufacturing addressable and static electronic displays |
US8013238B2 (en) * | 2007-07-09 | 2011-09-06 | Energy Related Devices, Inc. | Micro concentrators elastically coupled with spherical photovoltaic cells |
-
2010
- 2010-09-14 TW TW099130997A patent/TWI539631B/zh active
- 2010-09-14 TW TW099130994A patent/TWI528604B/zh not_active IP Right Cessation
- 2010-09-15 AU AU2010295691A patent/AU2010295691B2/en not_active Ceased
- 2010-09-15 WO PCT/US2010/048918 patent/WO2011034908A1/en active Application Filing
- 2010-09-15 MX MX2012003279A patent/MX2012003279A/es not_active Application Discontinuation
- 2010-09-15 JP JP2012529872A patent/JP2013504861A/ja not_active Withdrawn
- 2010-09-15 BR BR112012008351A patent/BR112012008351A2/pt not_active IP Right Cessation
- 2010-09-15 SG SG2012016861A patent/SG179078A1/en unknown
- 2010-09-15 RU RU2012114787/07A patent/RU2012114787A/ru not_active Application Discontinuation
- 2010-09-15 CA CA2772919A patent/CA2772919A1/en not_active Abandoned
- 2010-09-15 KR KR1020127009522A patent/KR20120093880A/ko not_active Application Discontinuation
- 2010-09-15 CN CN201080048098.8A patent/CN102695914B/zh active Active
- 2010-09-15 EP EP10817749.4A patent/EP2478290A4/en not_active Withdrawn
-
2012
- 2012-03-13 IL IL218610A patent/IL218610A/en not_active IP Right Cessation
- 2012-03-13 IL IL218611A patent/IL218611A/en not_active IP Right Cessation
- 2012-03-14 ZA ZA2012/01893A patent/ZA201201893B/en unknown
Also Published As
Publication number | Publication date |
---|---|
AU2010295691A1 (en) | 2012-03-29 |
EP2478290A1 (en) | 2012-07-25 |
EP2478290A4 (en) | 2014-01-15 |
RU2012114787A (ru) | 2013-10-27 |
IL218610A (en) | 2014-04-30 |
CA2772919A1 (en) | 2011-03-24 |
IL218611A0 (en) | 2012-05-31 |
TW201133958A (en) | 2011-10-01 |
CN102695914A (zh) | 2012-09-26 |
IL218611A (en) | 2015-04-30 |
SG179078A1 (en) | 2012-04-27 |
TW201133959A (en) | 2011-10-01 |
MX2012003279A (es) | 2012-10-03 |
AU2010295691B2 (en) | 2013-10-17 |
CN102695914B (zh) | 2015-12-09 |
JP2013504861A (ja) | 2013-02-07 |
WO2011034908A1 (en) | 2011-03-24 |
ZA201201893B (en) | 2012-11-28 |
TWI539631B (zh) | 2016-06-21 |
BR112012008351A2 (pt) | 2019-09-24 |
KR20120093880A (ko) | 2012-08-23 |
IL218610A0 (en) | 2012-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI528604B (zh) | 發光、光伏或其它電子裝置及系統 | |
US10516073B2 (en) | Light emitting, photovoltaic or other electronic apparatus and system | |
US8753947B2 (en) | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system | |
US9400086B2 (en) | Apparatus with light emitting or absorbing diodes | |
US10161615B2 (en) | Apparatus with forward and reverse-biased light emitting diodes coupled in parallel | |
TWI615994B (zh) | 用在可印組成物的二極體 | |
KR102030331B1 (ko) | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 | |
Hills et al. | Ray et al. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |