TWI526411B - Method for manufacturing glass substrates - Google Patents

Method for manufacturing glass substrates Download PDF

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TWI526411B
TWI526411B TW101123487A TW101123487A TWI526411B TW I526411 B TWI526411 B TW I526411B TW 101123487 A TW101123487 A TW 101123487A TW 101123487 A TW101123487 A TW 101123487A TW I526411 B TWI526411 B TW I526411B
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glass
base material
main surface
chemical polishing
treatment
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TW101123487A
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TW201315702A (en
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Sakae Nishiyama
Yasuhiro Kashihara
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Nsc Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
  • Position Input By Displaying (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Description

玻璃基板之製造方法 Method for manufacturing glass substrate

本發明係關於將被施行強化處理的玻璃母材,且為以跨越應切斷的位置亦即區劃線的方式在第1主面及第2主面形成有阻劑層的玻璃母材,藉由化學研磨處理進行切斷分離,藉此獲得複數玻璃基板的玻璃基板之製造方法。 The present invention relates to a glass base material to be subjected to a tempering treatment, and is a glass base material in which a resist layer is formed on the first main surface and the second main surface so as to cross over a position to be cut, that is, a region. A method of producing a glass substrate of a plurality of glass substrates by cutting and separating by chemical polishing treatment.

在被適用於行動電話等顯示裝置的螢幕的防護玻璃或觸控面板,係大部分基於其透明性而使用玻璃基板。如上所示之玻璃基板係由提高裝置的攜帶性的觀點來看,被要求薄型化,另一方面,由安全性等觀點來看,則被要求高強度化。因此,以往嘗試將藉由風冷強化法或化學強化法等施行強化處理的強化玻璃使用在玻璃基板。尤其,對於被要求薄度的顯示裝置用玻璃基板,廣為使用化學強化處理。 In a cover glass or a touch panel that is applied to a screen of a display device such as a mobile phone, a glass substrate is mostly used based on its transparency. The glass substrate as described above is required to be thinner from the viewpoint of improving the portability of the device, and is required to have high strength from the viewpoint of safety and the like. Therefore, in the past, it has been attempted to use a tempered glass which is subjected to a strengthening treatment by an air-cooling strengthening method or a chemical strengthening method, etc., on a glass substrate. In particular, chemical strengthening treatment is widely used for a glass substrate for a display device which is required to be thin.

但是,已施行化學強化處理等強化處理的強化完畢玻璃係有不易進行切斷等加工的傾向。一般而言,係當將σc設為壓縮應力〔MPa〕、DOL設為化學強化層的厚度〔μm〕、T設為板厚〔μm〕、及σT設為CT值(Calculated Tensile Stress)〔MPa〕時,以下式所計算的σT的值亦即CT值愈大,則化學強化玻璃的切斷等加工愈為困難。 However, the strengthened glass which has been subjected to the strengthening treatment such as the chemical strengthening treatment tends to be difficult to perform processing such as cutting. In general, when σ c is a compressive stress [MPa], DOL is a thickness of a chemical strengthening layer [μm], T is a plate thickness [μm], and σ T is a calculated value (Calculated Tensile Stress). In the case of [MPa], the larger the value of σ T calculated by the following formula, that is, the larger the CT value, the more difficult it is to cut the chemically strengthened glass.

若無法進行切斷等加工,由於變得無法由大型的強化處理完畢玻璃母材採用複數枚玻璃基板,因此只好對於單個玻璃基板進行化學強化處理或晶片領域形成處理等。因此,無法達成使用強化玻璃之玻璃基板的生產性的提升,而會有玻璃基板的生產成本增大的問題。 If it is impossible to perform processing such as cutting, it is impossible to use a plurality of glass substrates for the glass base material after the large-scale strengthening treatment, and therefore it is only necessary to perform chemical strengthening treatment or wafer field formation treatment on a single glass substrate. Therefore, the productivity improvement of the glass substrate using a tempered glass cannot be achieved, and there exists a problem that the production cost of a glass substrate increases.

因此,在習知技術之中存在一種藉由壓縮應力層的厚度(相當於上述DOL)設為10μm以上30μm以下、及壓縮應力的值(相當於上述σc)設為30kgf/mm2以上60kgf/mm2以下(294MPa以上588MPa以下)來使切斷性提升的化學強化玻璃(參照例如專利文獻1)。藉由該技術,可穩定進行滿足市場需求的化學強化玻璃的切斷。 Therefore, in the prior art, the thickness (corresponding to the above DOL) of the compressive stress layer is set to 10 μm or more and 30 μm or less, and the value of the compressive stress (corresponding to the above σ c ) is set to 30 kgf/mm 2 or more and 60 kgf. / 2 or less mm (294MPa 588MPa or more or less) to enhance the cutting power so that the chemical strengthened glass (e.g. refer to Patent Document 1). By this technique, it is possible to stably cut the chemically strengthened glass that satisfies the market demand.

〔先前技術文獻〕 [Previous Technical Literature] 〔專利文獻〕 [Patent Document]

[專利文獻1]日本特開2004-83378號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-83378

但是,在上述專利文獻1之技術中,會有僅可切斷壓縮應力層(化學強化層)的厚度及壓縮應力的值在預定範圍內者的不良情形。實際上,若上述CT值為15左右,則可切斷,但是若CT值為20左右,會產生無法沿著切割線進行分斷的情形,或者若加強切斷壓力時,會有玻璃發生破壞的不良情形發生。另一方面,由於存在圖求更為薄型且更為強固的玻璃基板的市場需求,因此可謂為圖求一種關於CT值超過20者,亦可穩定切斷的技術。 However, in the technique of Patent Document 1, there is a problem that the thickness of the compressive stress layer (chemical strengthening layer) and the value of the compressive stress can be cut within a predetermined range. In fact, if the CT value is about 15, the cutting can be performed. However, if the CT value is about 20, there is a case where the cutting cannot be performed along the cutting line, or if the cutting pressure is increased, the glass may be broken. The bad situation happened. On the other hand, there is a market demand for a thinner and more robust glass substrate. Therefore, it is a technique for stably cutting off a CT value of more than 20.

本發明之目的在提供可由已施行強固強化處理的大型玻璃母材,穩定採用複數枚玻璃基板之玻璃基板之製造方法。 An object of the present invention is to provide a method for producing a glass substrate which can be stably used in a plurality of glass substrates by a large-sized glass base material which has been subjected to a strengthening and strengthening treatment.

本發明之玻璃基板之製造方法係將被施行強化處理的玻璃母材,且為以跨越應切斷的位置亦即區劃線的方式在第1主面及第2主面形成有阻劑層的玻璃母材,藉由化學研磨處理進行切斷分離,藉此獲得複數玻璃基板者。在此主面意指除了玻璃母材的周圍6面中的4端面以外的表側與背側的2平面。該玻璃基板之製造方法係包含第1化學研磨步驟及第2化學研磨步驟。在第1化學研磨步驟中,係僅在玻璃母材的第1主面以預定的單面研磨量施行化學研磨處理。在第2化學研磨步驟中,係在第1主面及第2主面的雙方施行化學研磨處理。 The method for producing a glass substrate according to the present invention is to form a glass base material to be tempered, and to form a resist layer on the first main surface and the second main surface so as to cross the region to be cut, that is, to scribe the region. The glass base material is cut and separated by a chemical polishing treatment, thereby obtaining a plurality of glass substrates. Here, the main surface means two planes of the front side and the back side other than the four end faces of the six sides of the glass base material. The method for producing the glass substrate includes a first chemical polishing step and a second chemical polishing step. In the first chemical polishing step, the chemical polishing treatment is performed only on the first main surface of the glass base material at a predetermined one-side polishing amount. In the second chemical polishing step, chemical polishing treatment is performed on both the first main surface and the second main surface.

在進行第2化學研磨處理之前或後,進行第1化學研 磨處理,藉此使被形成在第1主面的第1區劃溝、及被形成在第2主面的第2區劃溝,在由玻璃母材的厚度方向的中心以相當於前述單面研磨量的量偏離的位置貫穿。 The first chemical research is performed before or after the second chemical polishing treatment. The grinding treatment is performed so that the first region groove formed on the first main surface and the second region groove formed on the second main surface are corresponding to the single-side polishing in the center of the thickness direction of the glass base material. The amount of quantity deviates from the position.

第1化學研磨處理(單面化學研磨處理)及第2化學研磨處理(雙面化學研磨處理)係可以該順序進行,即使使順序前後相反進行,亦可享受相同的作用效果。 The first chemical polishing treatment (single-sided chemical polishing treatment) and the second chemical polishing treatment (double-sided chemical polishing treatment) can be carried out in this order, and the same operational effects can be obtained even if the order is reversed.

通常若上述CT值超過20左右,在切割裂片法等物理性方法中,玻璃母材變得不易切斷,此外,即使在藉由化學研磨處理來切斷的情形下,亦有在藉由蝕刻所發生的區劃溝貫穿的同時,玻璃基板發生破裂的傾向。但是,如上所述,藉由使第1區劃溝及第2區劃溝,在由玻璃母材的厚度方向的中心以相當於單面研磨量的量偏移的位置貫穿,在貫穿的同時在玻璃基板所發生的內部應力變化減低,而可防止玻璃基板破裂。 In general, when the CT value exceeds about 20, the glass base material is difficult to be cut by a physical method such as a cutting and splitting method, and even in the case of being cut by a chemical polishing treatment, it is also etched by etching. At the same time as the occurrence of the division groove, the glass substrate tends to be broken. However, as described above, the first region groove and the second region groove are penetrated at a position offset by the amount corresponding to the one-side polishing amount from the center in the thickness direction of the glass base material, and the glass is penetrated at the same time. The internal stress change occurring in the substrate is reduced, and the glass substrate is prevented from being broken.

此外,較佳為在第1區劃溝及第2區劃溝貫穿後,另外進行使玻璃基板的端面變形為剖面視下呈圓弧狀的端面處理。藉由進行該端面處理,由玻璃基板中的端面的突出部的厚度方向的中心矯正偏移,可期待外觀性或強度會提升。其中,在此,圓弧狀並非僅意指曲率半徑完全相一致的圓的一部分,而是設為亦包含曲率半徑彼此在±5%左右的範圍內彼此不同的複數圓弧呈連續的形狀。 Further, it is preferable that the end surface of the glass substrate is deformed into an end surface which is arcuate in cross section after the first region groove and the second region groove are inserted. By performing the end surface treatment, the center of the thickness direction of the protruding portion of the end surface in the glass substrate is corrected and shifted, and the appearance or strength can be expected to be improved. Here, the arc shape does not mean only a part of a circle in which the radius of curvature completely coincides, but a shape in which a plurality of circular arcs having mutually different curvature radii from each other within a range of about ±5% are continuous.

藉由本發明,可由已施行強固的強化處理的大型玻璃 母材,穩定採用複數枚玻璃基板。 By means of the invention, it is possible to use a large glass that has been subjected to a strong strengthening treatment The base material is stabilized by a plurality of glass substrates.

圖1(A)及圖1(B)係顯示施行本發明之製造方法之玻璃母材10的概略。玻璃母材10係例如具有400×500mm左右的面積,使用被薄型化成板厚0.5mm~1.2mm左右(在本實施形態中為0.7mm左右)之由矽酸鋁玻璃所成的玻璃母材10。玻璃母材10係在例如350~450℃左右的硝酸鉀熔融鹽中進行化學強化處理。玻璃母材10係在進行化學強化處理後,在第1主面側形成有具有觸控面板用的感測器元件等的複數晶片領域(使用領域)及保護晶片領域的保護層,之後另外在第1主面及第2主面形成有耐酸性的阻劑層14。 Fig. 1 (A) and Fig. 1 (B) show the outline of a glass base material 10 which is subjected to the production method of the present invention. The glass base material 10 has, for example, an area of about 400×500 mm, and a glass base material 10 made of aluminum silicate glass which is thinned to a thickness of about 0.5 mm to 1.2 mm (about 0.7 mm in this embodiment) is used. . The glass base material 10 is chemically strengthened in a molten salt of potassium nitrate of, for example, about 350 to 450 °C. After the chemical strengthening treatment, the glass base material 10 is formed on the first main surface side in the field of a plurality of wafers (using fields) including a sensor element for a touch panel, and a protective layer in the field of protecting wafers. The first main surface and the second main surface are formed with an acid resistant resist layer 14.

阻劑層14係以跨越用以區劃上述晶片領域的線寬1mm~5mm左右的區劃領域的方式形成。關於阻劑層14所使用的耐氫氟酸蝕刻阻劑,係可使用各式各樣者,例如在本實施形態中係使用Nippon Paint股份有限公司製OPTO(註冊商標)。在玻璃母材10的第2主面係另外由阻劑層14之上黏貼有耐酸性薄膜12。 The resist layer 14 is formed to span a region of a region having a line width of about 1 mm to 5 mm for arranging the above-mentioned wafer field. The hydrofluoric acid etch resist used in the resist layer 14 can be used in various forms. For example, in the present embodiment, OPTO (registered trademark) manufactured by Nippon Paint Co., Ltd. is used. On the second main surface of the glass base material 10, an acid-resistant film 12 is additionally adhered to the resist layer 14.

耐酸性薄膜12係通常被附加在與形成有晶片領域之面的相反側。其理由在於改善晶片領域側的阻劑層14的剝離性之故。此外,耐酸性薄膜12係以空氣不會混入至與玻璃母材10之間的方式進行黏貼為佳。在本實施形態中,係使用玻璃疊合機來進行耐酸性薄膜12的黏貼,但 是並非限定於此。此外,在此,以耐酸性薄膜12而言,使用由厚度70μm左右的PET(聚對苯二甲酸乙二酯)所構成的樹脂薄膜,但是亦可使用其他素材的薄膜。其中,在圖1(A)中係顯示黏貼耐酸性薄膜12前的玻璃母材10,在圖1(B)中係顯示在第2主面黏貼有耐酸性薄膜12的玻璃母材10。 The acid-resistant film 12 is usually attached to the opposite side to the surface on which the wafer is formed. The reason for this is to improve the peelability of the resist layer 14 on the wafer field side. Further, the acid-resistant film 12 is preferably adhered so that air does not mix between the glass base material 10 and the glass base material 10. In the present embodiment, the adhesion of the acid-resistant film 12 is performed using a glass laminator, but It is not limited to this. In addition, here, as the acid-resistant film 12, a resin film made of PET (polyethylene terephthalate) having a thickness of about 70 μm is used, but a film of another material may be used. In FIG. 1(A), the glass base material 10 before the adhesion of the acid-resistant film 12 is shown, and in FIG. 1(B), the glass base material 10 to which the acid-resistant film 12 is adhered to the second main surface is shown.

黏貼有耐酸性薄膜12的玻璃母材10係在進行化學研磨處理前先被安置在玻璃支持具16內。玻璃支持具16係藉由聚氯乙烯等具有耐氫氟酸性的素材所構成。此外,玻璃支持具16係具備有複數個以支持玻璃母材10的端部的方式所構成的導引溝,以可由開口面沿著導引溝插入玻璃母材10的方式所構成。若將複數玻璃母材10沿著導引溝插入在玻璃支持具16內,在複數玻璃母材10彼此設有間隙的狀態下,而且在各個垂直豎立的狀態下被配置在玻璃支持具16內。當對玻璃母材10進行化學研磨處理時,係使收容有玻璃母材10的玻璃支持具16浸漬在化學研磨槽。 The glass base material 10 to which the acid-resistant film 12 is adhered is placed in the glass holder 16 before the chemical polishing treatment. The glass support member 16 is composed of a material having hydrogen fluoride resistance such as polyvinyl chloride. Further, the glass holder 16 is provided with a plurality of guide grooves formed to support the end portions of the glass base material 10, and is configured to be inserted into the glass base material 10 along the guide grooves. When the plurality of glass base materials 10 are inserted into the glass holder 16 along the guide grooves, the plurality of glass base materials 10 are placed in the glass holder 16 in a state in which the plurality of glass base materials 10 are provided with a gap therebetween, and in each of the vertically erected states. . When the glass base material 10 is subjected to a chemical polishing treatment, the glass support member 16 containing the glass base material 10 is immersed in a chemical polishing bath.

接著,使用圖3(A)~圖3(B),說明對玻璃母材10的化學研磨處理。以化學研磨液而言,使用含有2~10重量%的氫氟酸、2~6重量%的硫酸、5~20重量%的鹽酸者。若使玻璃母材10浸漬在化學研磨液,如圖3(A)所示,玻璃母材10的第1主面中未設有阻劑層14的部分被蝕刻而形成第1區劃溝102。另一方面,由於在玻璃母材10的第2主面黏貼有耐酸性薄膜12,因此第2主面並未 被蝕刻。 Next, the chemical polishing treatment of the glass base material 10 will be described using FIGS. 3(A) to 3(B). For the chemical polishing liquid, those containing 2 to 10% by weight of hydrofluoric acid, 2 to 6% by weight of sulfuric acid, and 5 to 20% by weight of hydrochloric acid are used. When the glass base material 10 is immersed in the chemical polishing liquid, as shown in FIG. 3(A), the portion of the first main surface of the glass base material 10 where the resist layer 14 is not provided is etched to form the first division groove 102. On the other hand, since the acid-resistant film 12 is adhered to the second main surface of the glass base material 10, the second main surface is not Etched.

接著,在第1區劃溝102以所希望的量深化的階段,由化學研磨槽取出玻璃支持具16,將耐酸性薄膜12由玻璃母材10剝離。耐酸性薄膜12被剝離後的玻璃母材10係再度被安置在玻璃支持具16,且送回至化學研磨槽內。僅將第1主面進行單面化學研磨的單面研磨量係藉由玻璃母材10的CT值來進行設定。原則上,單面研磨量係必須隨著CT值變大而增加,但是若考慮到後處理的方便等,以形成為儘可能小的值為佳。在本實施形態中,係對CT值25左右的化學強化玻璃,施行50μm左右的單面研磨。 Next, at the stage where the first region groove 102 is deepened by a desired amount, the glass holder 16 is taken out from the chemical polishing bath, and the acid-resistant film 12 is peeled off from the glass base material 10. The glass base material 10 from which the acid-resistant film 12 has been peeled off is again placed on the glass holder 16 and returned to the chemical polishing bath. The single-side polishing amount in which only the first main surface is subjected to one-side chemical polishing is set by the CT value of the glass base material 10. In principle, the single-side polishing amount must be increased as the CT value becomes larger, but it is preferable to form as small as possible in consideration of the convenience of post-treatment. In the present embodiment, the chemically strengthened glass having a CT value of about 25 is subjected to single-side polishing of about 50 μm.

之後,如圖3(B)所示,在玻璃母材10的第1主面,第1區劃溝102更加深化,另一方面,玻璃母材10的第2主面中未設有阻劑層14的部分被蝕刻而形成第2區劃溝104。此外,若繼續化學研磨處理時,如圖3(C)所示,第1區劃溝102及第2區劃溝104會更加深化。若玻璃母材10中未設有阻劑層14的部分的厚度成為0.1mm左右,則由化學研磨槽取出玻璃支持具16。 Then, as shown in FIG. 3(B), the first partition groove 102 is further deepened on the first main surface of the glass base material 10, and the resist layer is not provided in the second main surface of the glass base material 10. A portion of 14 is etched to form a second region trench 104. Further, when the chemical polishing treatment is continued, as shown in FIG. 3(C), the first division groove 102 and the second division groove 104 are further deepened. When the thickness of the portion of the glass base material 10 where the resist layer 14 is not provided is about 0.1 mm, the glass holder 16 is taken out from the chemical polishing bath.

接著,玻璃母材10係在使第1主面為上的狀態下被水平載置於玻璃支持具18上。玻璃母材10之上係視需要載置有未圖示之其他玻璃支持具18。接著,支持有玻璃母材10的玻璃支持具18被浸漬在化學研磨槽內。若玻璃母材10被浸漬在化學研磨槽時,如圖5(A)所示,第1區劃溝102及第2區劃溝104更加深化,不久第1區劃溝102及第2區劃溝104即貫穿。由於第1區劃溝102及第 2區劃溝104貫穿,玻璃母材10被切斷,而得如圖4(B)及圖5(B)所示之複數玻璃基板100。 Next, the glass base material 10 is horizontally placed on the glass holder 18 in a state where the first main surface is placed upward. On the glass base material 10, other glass support members 18 (not shown) are placed as needed. Next, the glass support member 18 supporting the glass base material 10 is immersed in the chemical polishing bath. When the glass base material 10 is immersed in the chemical polishing bath, as shown in FIG. 5(A), the first zone ditch 102 and the second zone ditch 104 are further deepened, and soon the first zone ditch 102 and the second zone ditch 104 are penetrated. . Due to the first zone ditch 102 and the first The two-zone groove 104 is penetrated, and the glass base material 10 is cut, and a plurality of glass substrates 100 as shown in FIGS. 4(B) and 5(B) are obtained.

通常藉由蝕刻來切斷上述CT值超過20左右的化學強化玻璃時,在與區劃溝貫穿的同時,玻璃基板100會破裂。但是,如本實施形態所示,首先藉由進行單面研磨,防止在與區劃溝貫穿的同時,玻璃基板100發生破裂的情形。 When the chemically strengthened glass having a CT value of more than about 20 is usually cut by etching, the glass substrate 100 is broken while the partition groove is penetrated. However, as described in the present embodiment, first, the single-side polishing is performed to prevent the glass substrate 100 from being broken while passing through the division groove.

防止玻璃基板100在區劃溝貫穿的同時發生破裂的機制的詳細內容雖不明確,但是經許多實驗的結果,該機制被推測如下。亦即,通常在同時蝕刻玻璃母材10中的第1主面及第2主面時,在圖5(B)所示之中心線110上,區劃溝貫穿,稜線112位於中心線110上。在此,在化學強化玻璃中,係在表面形成壓縮應力層,另一方面,在背面形成拉伸應力層,在中心線110上,被認為拉伸應力變得最強。若區劃溝在該拉伸應力變得最強的部位貫穿時,在貫穿的同時所發生的內部應力的變化會巨大化,被預測玻璃基板會破裂。 Although the details of the mechanism for preventing cracking of the glass substrate 100 while the division trench penetrates are not clear, the mechanism is presumed to be as follows as a result of many experiments. That is, when the first main surface and the second main surface of the glass base material 10 are simultaneously etched, the division groove is penetrated on the center line 110 shown in FIG. 5(B), and the ridge line 112 is located on the center line 110. Here, in the chemically strengthened glass, a compressive stress layer is formed on the surface, and on the other hand, a tensile stress layer is formed on the back surface, and the tensile stress is considered to be the strongest on the center line 110. When the division groove penetrates at the portion where the tensile stress becomes the strongest, the change in the internal stress occurring at the same time as the penetration is large, and the glass substrate is predicted to be broken.

因此,在本發明之實施形態中,由於在該拉伸應力變得最強之由中心線110偏移預定偏移量114的位置發生玻璃基板的稜線112,因此採用上述單面研磨處理。經由實驗可知,上述偏移量114在原則上必須隨著CT值變高而設定為較大。其理由在於偏移量114變大而愈遠離中心線,玻璃母材10的內部的拉伸應力愈為降低之故。另一方面,若將偏移量114加大至所需以上時,由於會有強度 或設計性降低的可能性,因此偏移量114係可謂為以在可防止玻璃基板100發生破裂的範圍內儘可能地設定為較小為佳。 Therefore, in the embodiment of the present invention, since the ridge line 112 of the glass substrate is generated at a position where the center line 110 is shifted by the predetermined offset amount 114 when the tensile stress becomes the strongest, the single-side polishing process is employed. It has been experimentally found that the above-described offset amount 114 must be set large in principle as the CT value becomes higher. The reason for this is that the offset 114 is increased and the distance from the center line is increased, and the tensile stress inside the glass base material 10 is further lowered. On the other hand, if the offset 114 is increased above the required level, there will be strength. Alternatively, the design may be reduced. Therefore, the offset amount 114 is preferably set to be as small as possible within a range in which the glass substrate 100 can be prevented from being broken.

例如玻璃母材10的板厚為0.5mm~1.2mm左右,若CT值至30左右,藉由將偏移量114設定為50μm~100μm,來防止玻璃基板100破裂。例如,由於將偏移量114設定為50μm,因此以約2~3μm/分鐘左右的蝕刻率來執行單面化學研磨處理20分鐘左右後,以4~6μm/分鐘左右的蝕刻率,進行雙面化學研磨處理至區劃溝貫穿為止即可。在本實施形態中,係將單面研磨速度設定為2.5μm/分鐘,而且將雙面研磨速度設定為5μm/分鐘,但是研磨速度係可視需要來作適當增減。 For example, the thickness of the glass base material 10 is about 0.5 mm to 1.2 mm, and if the CT value is about 30, the offset amount 114 is set to 50 μm to 100 μm to prevent the glass substrate 100 from being broken. For example, since the offset amount 114 is set to 50 μm, the one-sided chemical polishing treatment is performed at an etching rate of about 2 to 3 μm/min for about 20 minutes, and then the etching rate is performed at an etching rate of about 4 to 6 μm/min. The chemical polishing treatment can be carried out until the division groove is penetrated. In the present embodiment, the single-side polishing rate is set to 2.5 μm/min, and the double-side polishing rate is set to 5 μm/min, but the polishing rate is appropriately increased or decreased as needed.

接著,使用圖6(A)~圖6(B),說明適用於各玻璃基板100的端面的端面處理。如圖6(A)所示,在區劃溝貫穿的時點,玻璃基板100的端面係在稜線112的位置形成為尖的形狀。因此,較佳為在區劃溝貫穿而得複數玻璃基板100之後,亦以玻璃基板100的端面在剖面視下呈圓弧狀的方式進行端面處理。 Next, the end surface treatment applied to the end faces of the respective glass substrates 100 will be described with reference to FIGS. 6(A) to 6(B). As shown in FIG. 6(A), the end surface of the glass substrate 100 is formed in a pointed shape at the position of the ridge line 112 at the time when the division groove is penetrated. Therefore, it is preferable to perform end surface treatment so that the end surface of the glass substrate 100 has an arc shape in cross section after the plurality of glass substrates 100 are formed through the division grooves.

若對玻璃基板100施行端面處理,係在以玻璃支持具18支持複數玻璃基板100的上下面的狀態下,將玻璃基板100浸漬在化學研磨槽1小時~10小時左右。此時,較佳為將欲蝕刻更多之側(在本實施形態中為第2主面側)形成為上。其理由在於上側之面不易滯留污泥等而使更為新鮮的化學研磨液容易循環,因此會有研磨速度高於下側的 傾向之故。如圖6(A)所示,第2主面側的研磨量大於第1主面側的結果,取得第1主面側及第2主面側的平衡。在本實施形態中,係藉由將欲蝕刻更多之側形成為上來進行端面處理,來取得第1主面側及第2主面側的平衡,但是端面處理的方法並非限定於此。例如,即使藉由將蝕刻液的循環速度以上下設置差異,或將蝕刻液的黏度以上下設置差異,亦可得相同的作用效果。 When the glass substrate 100 is subjected to the end surface treatment, the glass substrate 100 is immersed in the chemical polishing bath for about 1 hour to 10 hours in a state where the glass holder 18 supports the upper and lower surfaces of the plurality of glass substrates 100. At this time, it is preferable to form the side to be etched more (in the present embodiment, the second main surface side). The reason is that the upper surface is less likely to retain sludge or the like, and the fresher chemical polishing liquid is easily circulated, so that the polishing rate is higher than the lower side. The tendency is. As shown in FIG. 6(A), the amount of polishing on the second main surface side is larger than that on the first main surface side, and the balance between the first main surface side and the second main surface side is obtained. In the present embodiment, the end surface treatment is performed by forming the side to be etched more, and the balance between the first main surface side and the second main surface side is obtained. However, the method of the end surface treatment is not limited thereto. For example, even if the difference in the circulation speed of the etching liquid is set differently or more, or the viscosity of the etching liquid is set to be different from the above, the same effect can be obtained.

端面處理已結束的玻璃基板100係被浸漬在收容有苛性鹼或TMAH(氫氧化四甲銨)及DMI(1,3-二甲基-2-咪唑啉酮)的混合液等鹼性剝離液的剝離槽,如圖6(C)所示,阻劑14被剝離。藉由以上處理,可由化學強化完畢的玻璃母材,穩定且有效率地獲得複數玻璃基板。其中,在本實施形態中,係說明在阻劑層14剝離前進行端面處理之例,但是進行端面處理並非一定為必須。若即使形成在玻璃基板100的端面的稜線112由厚度方向的中心偏離,亦在實用上不成問題,則無須進行端面處理,即可使用玻璃基板100。 The glass substrate 100 whose end surface treatment has been completed is immersed in an alkaline stripping liquid such as a mixture containing caustic or TMAH (tetramethylammonium hydroxide) and DMI (1,3-dimethyl-2-imidazolidinone). The peeling groove, as shown in Fig. 6(C), the resist 14 is peeled off. By the above treatment, a plurality of glass substrates can be stably and efficiently obtained from the chemically strengthened glass base material. In the present embodiment, an example in which the end surface treatment is performed before the resist layer 14 is peeled off will be described. However, it is not always necessary to perform the end surface treatment. Even if the ridge line 112 formed on the end surface of the glass substrate 100 is deviated from the center in the thickness direction, it is practically not problematic, and the glass substrate 100 can be used without performing end surface treatment.

在上述實施形態中,係說明先在進行單面化學研磨處理後,再進行雙面化學研磨處理之例,但是即使先進行雙面化學研磨處理後,再進行單面化學研磨處理,亦可達成相同的作用效果,因此可視需要來變更處理的順序。 In the above embodiment, an example in which the double-sided chemical polishing treatment is performed after the one-side chemical polishing treatment is performed first, but the single-sided chemical polishing treatment may be performed after the double-sided chemical polishing treatment is performed first. The same effect, so the order of processing can be changed as needed.

接著,使用圖7(A)及圖7(B),說明單面研磨處理的變化。在上述實施形態中,在玻璃母材10的第2主面黏貼有耐酸性薄膜12的狀態下以預定時間進行化學研 磨處理,藉此防止區劃溝在厚度方向的中心貫穿。用以防止區劃溝在厚度方向的中心貫穿的手法,係亦可藉由上述黏貼耐酸性薄膜12以外的方法來達成。 Next, the change of the single-side polishing process will be described using FIG. 7(A) and FIG. 7(B). In the above embodiment, the chemical resistance is performed for a predetermined period of time in a state in which the acid-resistant film 12 is adhered to the second main surface of the glass base material 10. Grinding treatment, thereby preventing the division groove from penetrating through the center in the thickness direction. The method for preventing the division groove from penetrating the center in the thickness direction can be achieved by a method other than the above-described adhesion of the acid-resistant film 12.

圖7(A)及圖7(B)係一面藉由搬送滾輪36來搬送玻璃母材10,一面藉由被配置在搬送滾輪36的上下的上側淋洗噴嘴34及下側淋洗噴嘴32來進行化學研磨處理的單片式化學研磨裝置30。在該研磨裝置30中,如圖7(A)所示,即使藉由一面僅由下側淋洗噴嘴34噴射蝕刻液一面以預定時間進行單面化學研磨處理,亦可使用上述耐酸性薄膜12而得與單面研磨處理同樣的作用效果。此時,亦可在如圖7(A)所示進行單面化學研磨處理後,移至圖7(B)所示之雙面化學研磨處理,亦可在如圖7(A)所示進行單面化學研磨處理後,進行對上述化學研磨液槽的浸漬處理。此外,亦可視需要,使用上述玻璃支持具18來一面支持玻璃母材10一面搬送。此外,亦可變更單面化學研磨處理及雙面化學研磨處理的順序。 7(A) and 7(B), the glass base material 10 is conveyed by the conveyance roller 36, and the upper side rinse nozzle 34 and the lower side rinse nozzle 32 which are disposed on the upper and lower sides of the conveyance roller 36 are provided. A one-piece chemical polishing apparatus 30 that performs chemical polishing treatment. In the polishing apparatus 30, as shown in Fig. 7(A), the above-described acid-resistant film 12 can be used even if one-side chemical polishing treatment is performed for a predetermined period of time while ejecting the etching liquid from only the lower side eluting nozzle 34. It has the same effect as the single-side grinding process. At this time, after the one-side chemical polishing treatment as shown in FIG. 7(A), the double-sided chemical polishing treatment shown in FIG. 7(B) may be performed, or may be performed as shown in FIG. 7(A). After the one-side chemical polishing treatment, the immersion treatment of the above chemical polishing liquid tank is performed. Further, the glass support member 18 may be used to support the glass base material 10 while being conveyed as needed. In addition, the order of the one-side chemical polishing treatment and the double-sided chemical polishing treatment can also be changed.

此外,在上述實施形態中,係說明將大型玻璃母材10切斷而得複數長方形玻璃基板之例,但是玻璃基板100的形狀並非限定於圖8(A)所示之長方形。玻璃基板的形狀係可藉由光微影技術來適當變更被形成在阻劑層14的區劃領域的形狀而形成為任意形狀。若將玻璃母材藉由化學研磨處理進行切斷,如圖8(B)所示,即使為曲率半徑較小的複數圓弧呈連續的複雜形狀,亦不成問題,此外,即使為如在端部近傍設有貫穿孔152的形狀,亦不成 問題。 In the above-described embodiment, an example in which a large-sized glass base material 10 is cut to obtain a plurality of rectangular glass substrates will be described. However, the shape of the glass substrate 100 is not limited to the rectangular shape shown in FIG. 8(A). The shape of the glass substrate can be formed into an arbitrary shape by appropriately changing the shape formed in the region of the resist layer 14 by the photolithography technique. If the glass base material is cut by chemical polishing treatment, as shown in FIG. 8(B), even if the plurality of circular arcs having a small radius of curvature have a continuous complicated shape, it is not a problem, and even if it is at the end The shape of the through hole 152 is not formed in the vicinity of the rim. problem.

藉由上述之製造方法所得之玻璃基板100係可作為構成觸控面板一體型的液晶顯示器的使用者側的玻璃基板來使用。此外,亦可作為行動電話機的液晶顯示器的防護玻璃來使用。 The glass substrate 100 obtained by the above-described manufacturing method can be used as a glass substrate constituting a user side of a touch panel integrated liquid crystal display. In addition, it can also be used as a cover glass for a liquid crystal display of a mobile phone.

被設在晶片領域的感測器元件係一般較不耐熱,因此不易對形成有晶片領域的玻璃進行化學強化處理,但是若藉由本發明之實施形態,可穩定地切斷形成有晶片領域的化學強化完畢的大型玻璃母材10而得複數玻璃基板100,因此尤其在裝載有觸控面板用的感測器元件的玻璃基板中,可使生產性明顯提升。 The sensor element provided in the wafer field is generally less heat-resistant, so that it is difficult to chemically strengthen the glass in the wafer field. However, according to the embodiment of the present invention, the chemistry in which the wafer field is formed can be stably cut. Since the large-sized glass base material 10 is reinforced and the plurality of glass substrates 100 are obtained, the productivity can be remarkably improved particularly in the glass substrate on which the sensor elements for the touch panel are mounted.

上述實施形態的說明在所有方面均為例示,應考慮為不具限制性者。本發明之範圍係藉由申請專利範圍而非上述實施形態來表示。此外,在本發明之範圍係意圖包含有在與申請專利範圍均等的涵義及範圍內的所有變更。 The description of the above embodiments is illustrative in all aspects and should not be considered as limiting. The scope of the present invention is expressed by the scope of the claims and not the embodiments described above. In addition, the scope of the present invention is intended to embrace all modifications within the meaning and scope of the invention.

10‧‧‧玻璃母材 10‧‧‧Glass base metal

12‧‧‧耐酸性薄膜 12‧‧‧acid resistant film

14‧‧‧阻劑層 14‧‧‧Resist layer

16‧‧‧玻璃支持具 16‧‧‧glass support

18‧‧‧玻璃支持具 18‧‧‧glass support

30‧‧‧研磨裝置 30‧‧‧ grinding device

32‧‧‧下側淋洗噴嘴 32‧‧‧Lower side shower nozzle

34‧‧‧上側淋洗噴嘴 34‧‧‧Upper rinsing nozzle

36‧‧‧搬送滾輪 36‧‧‧Transport roller

100‧‧‧玻璃基板 100‧‧‧ glass substrate

102‧‧‧第1區劃溝 102‧‧‧Divulation in Zone 1

104‧‧‧第2區劃溝 104‧‧‧District 2

110‧‧‧中心線 110‧‧‧ center line

112‧‧‧稜線 112‧‧‧ ridgeline

114‧‧‧偏移量 114‧‧‧Offset

152‧‧‧貫穿孔 152‧‧‧through holes

圖1係顯示施行本發明之實施形態之玻璃基板之製造方法的玻璃母材的概略圖。 Fig. 1 is a schematic view showing a glass base material on which a method for producing a glass substrate according to an embodiment of the present invention is applied.

圖2係顯示將玻璃母材以縱置式安置在玻璃支持具的狀態圖。 Fig. 2 is a view showing a state in which a glass base material is placed in a longitudinal direction on a glass holder.

圖3係說明藉由化學研磨處理而在玻璃母材形成有區劃溝的狀態圖。 Fig. 3 is a view showing a state in which a groove is formed in a glass base material by a chemical polishing treatment.

圖4係顯示將玻璃母材以橫置式安置在玻璃支持具的 狀態圖。 Figure 4 shows the placement of the glass base material in a horizontal position on the glass support. State diagram.

圖5係顯示區劃溝貫穿後的狀態的玻璃部材的狀態圖。 Fig. 5 is a view showing a state of a glass member in a state in which a division groove is penetrated.

圖6係顯示對玻璃基板的端面施行化學研磨處理的狀態圖。 Fig. 6 is a view showing a state in which a chemical polishing treatment is performed on an end surface of a glass substrate.

圖7係顯示本發明之其他實施形態的圖。 Fig. 7 is a view showing another embodiment of the present invention.

圖8係顯示適用本發明之玻璃母材之其他例的圖。 Fig. 8 is a view showing another example of a glass base material to which the present invention is applied.

10‧‧‧玻璃母材 10‧‧‧Glass base metal

14‧‧‧阻劑層 14‧‧‧Resist layer

100‧‧‧玻璃基板 100‧‧‧ glass substrate

102‧‧‧第1區劃溝 102‧‧‧Divulation in Zone 1

104‧‧‧第2區劃溝 104‧‧‧District 2

110‧‧‧中心線 110‧‧‧ center line

112‧‧‧稜線 112‧‧‧ ridgeline

114‧‧‧偏移量 114‧‧‧Offset

Claims (2)

一種玻璃基板之製造方法,其係將被施行強化處理的玻璃母材,且為以跨越應切斷的位置亦即區劃線的方式在第1主面及第2主面形成有阻劑層的玻璃母材,藉由化學研磨處理進行切斷分離,藉此獲得複數玻璃基板之玻璃基板之製造方法,其特徵為包含:僅在第1主面以預定的單面研磨量施行化學研磨處理的第1化學研磨步驟;及在第1主面及第2主面的雙方施行化學研磨處理的第2化學研磨步驟,使被形成在第1主面的第1區劃溝、及被形成在第2主面的第2區劃溝,在由玻璃母材的厚度方向的中心以相當於前述單面研磨量的量偏離的位置貫穿。 A method for producing a glass substrate, which is a glass base material to which a tempering treatment is applied, and a resist layer is formed on the first main surface and the second main surface so as to cross over a region to be cut, that is, a scribe line. A method for producing a glass substrate of a plurality of glass substrates by cutting and separating by a chemical polishing treatment, wherein the glass base material is characterized in that the chemical polishing treatment is performed only on the first main surface at a predetermined single-side polishing amount. a first chemical polishing step; and a second chemical polishing step of performing chemical polishing treatment on both the first main surface and the second main surface to form the first division groove formed on the first main surface and the second division step The second area groove of the main surface penetrates at a position offset from the center of the glass base material in the thickness direction by an amount corresponding to the one-side polishing amount. 如申請專利範圍第1項之玻璃基板之製造方法,其中,在前述第1區劃溝及前述第2區劃溝貫穿後,另外包含進行使玻璃基板的端面變形為剖面視下呈圓弧狀的端面處理的端面處理步驟。 The method for producing a glass substrate according to claim 1, wherein the first region groove and the second region groove are inserted, and the end surface of the glass substrate is deformed into an end surface having an arc shape in a cross section. Processed end face processing steps.
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