TWI518302B - 在單一封裝晶片上的多軸整合式微機電系統（ｍｅｍｓ）慣性感測裝置 - Google Patents

在單一封裝晶片上的多軸整合式微機電系統（ｍｅｍｓ）慣性感測裝置 Download PDF

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TWI518302B
TWI518302B TW103103000A TW103103000A TWI518302B TW I518302 B TWI518302 B TW I518302B TW 103103000 A TW103103000 A TW 103103000A TW 103103000 A TW103103000 A TW 103103000A TW I518302 B TWI518302 B TW I518302B
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axis
gyroscope
displacement sensor
sensor
displacement
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TW201435306A (zh
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李德璽
張文華
蘇德奇 史瑞哈藍穆斯
米岡真吾
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矽立公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/003—Details of instruments used for damping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
    • G01P2015/0871—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system using stopper structures for limiting the travel of the seismic mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0862—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system
    • G01P2015/088—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with particular means being integrated into a MEMS accelerometer structure for providing particular additional functionalities to those of a spring mass system for providing wafer-level encapsulation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Gyroscopes (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Description

在單一封裝晶片上的多軸整合式微機電系統(MEMS)慣性感測裝置 [相關申請案之交叉參考]
出於各種目的，本發明主張下列申請中專利申請案之優先權，及以引用併入下列申請中專利申請案：2013年1月25日申請之美國臨時申請案61/757,085號及2013年1月25日申請之美國臨時申請案61/757,088號。
整合式微電子之研究及開發已繼續在CMOS及MEMS中產生令人震驚之進步。CMOS技術已成為積體電路(IC)之主要製造技術。基於感測器之微機電系統(MEMS)可與IC技術一起結合以實現若干進化感測器應用。
本發明係關於一MEMS(微機電系統)之一裝置或系統架構。
在一實施例中，本發明提供一多軸整合式MEMS慣性感測器裝置之一結構。該裝置可包含在一單一晶片上之一整合式三軸陀螺儀及三軸加速度計，產生一六軸慣性感測器裝置。藉由將該加速度計裝置增加至該陀螺儀裝置之中央，該結構在空間上有效使用該晶片之該設計區域。在一特定實施例中，該設計架構幾何形狀可為一矩形或正方形，其利用整個晶片區域及在一界定區域中最大化該感測器之大小。該MEMS係在該封裝中居中，其有利於該感測器之溫度效能。此外， 該整合式多軸慣性感測器裝置之電焊墊可經組態於該矩形晶片佈局之四個隅角中。此組態保證設計對稱性及有效率使用晶片區域。
100‧‧‧裝置
110‧‧‧基板
120‧‧‧三軸陀螺儀/元件/慣性質量件
121‧‧‧錨
122‧‧‧位移感測器
123‧‧‧位移驅動器
150‧‧‧電焊墊
210‧‧‧半導體基板
211‧‧‧層
212‧‧‧層
220‧‧‧三軸陀螺儀
230‧‧‧三軸加速度計
圖1係圖解說明根據本發明之一實施例之一多軸整合式MEMS慣性感測器裝置之一簡化示意圖；及圖2係圖解說明根據本發明之一實施例之一多軸整合式MEMS慣性感測器裝置之一簡化橫截面圖。
本發明係關於一MEMS(微機電系統)之一裝置或系統架構。本文描述之實施例將涵蓋特定應用之各種態樣，但將明白本發明具有一極大廣闊範圍之應用性。
圖1係一簡化示意圖及圖2係一簡化橫截面圖，兩者皆圖解說明根據本發明之一實施例之一多軸整合式MEMS慣性感測器裝置。
如圖1中展示，裝置100使用容許一三軸陀螺儀120及一三軸加速度計130內建在上覆基板110之相同晶片中且在相同封裝腔中之一架構。三軸陀螺儀120係定位在晶片之外側或在晶片之一外側部分中，而加速度計130則係在晶片之中央區域。在一實施例中，可係一加速度計之一第一MEMS慣性感測器130及可係一陀螺儀之一第二MEMS慣性感測器120可經組態於具有一內部及外部表面區域之一基板110上。第一MEMS慣性感測器130可經組態於內部區域上，而第二MEMS慣性感測器120可經組態於外部區域上。同樣可使用MEMS之其他組合、感測器及類似物。
在一特定實施例中，一第一MEMS慣性感測器130及一第二MEMS慣性感測器120經組態上覆於一經完全處理之COMS基板110上。該第一慣性感測器130可經組態於CMOS表面區域之一內部部分中，而該第二慣性感測器120可經組態於CMOS表面區域之一外部部 分中。兩個感測器將覆在相同真空腔中且其間不存在氣密密封。在一特定實施例中，可在內部及外部部分之間存在氣密密封。因此，兩個慣性感測器可經組態於相同晶片上且在相同封裝中。
在一特定實施例中，三軸陀螺儀120可包含耦合至半導體基板110之錨121。如在圖1中指示，元件120之各者可係針對一指定感測軸(X、Y及Z)之一慣性質量件。同樣地，該等元件120之各者可包含各感測軸之對應位移感測器122。此外，陀螺儀元件120之各者可包含經組態以使該慣性質量件移位之一位移驅動器123。回應於藉由位移驅動器123使慣性質量件120移位，x軸、y軸及z軸位移感測器122提供資料。
在一實施例中，焊墊可經組態於該晶粒、基板及封裝之隅角之一或多者中。在一特定實施例中，所有四個隅角具有電焊墊150之專用區域。不存在額外之頂部/底部或左側/右側區域待分配給焊墊。此架構可最大化該感測器區域，且因此獲得更佳效能。該等感測器在幾何中全部係對稱的，歸因於封裝效應，其係有利於感測器溫度效能。
在一特定實施例中，陀螺儀結構之所有部分可自一單一遮罩層形成且經組態具有一空心中間部分。此單一層可合併感測陀螺儀運動之各者。並不需要單獨形成該整合式陀螺儀之X、Y及Z軸感測器，其在製造中減少步驟之數量。
圖2展示多軸整合式慣性感測器裝置之橫截面。如所示，裝置200包含可具有一中心區域及繞該中心區域之一邊界區域之一半導體基板210。一三軸加速度計230可形成在半導體基板210之中心區域內，及一三軸陀螺儀220可形成在該半導體基板之中心區域內。同樣地，層211及212可包含鈍化層或介電層。
一選用之設計涉及在一蓋晶圓中使用一Z移動制止結構，以在晶片之安置該加速度計裝置的中心區域調整阻尼的效能。如在圖2中展示，藉由相較於上覆於該陀螺儀部分之更高墊材之上覆於該加速度部 分之該蓋晶圓的更低墊材，展示該「Z移動制止」結構。可使用此組態來減輕被稱為「加速度計振鈴」之一現象，該現象可係各種應用不期望的。可需要某些閉合環回饋系統以控制感測器振鈴。藉由使用該Z移動制止結構，本設計可在操作期間減輕「加速度計振鈴」，且容許一低阻尼陀螺儀及一高阻尼加速度計共存於一單一封裝內。
亦應瞭解，本文描述之實例及實施例僅係為圖解說明之目的，且應瞭解根據其等之各種修改或改變將被熟習此項技術者提議，且係包含於本發明之精神及範圍及隨附申請專利範圍之範圍中。
100‧‧‧裝置
110‧‧‧基板
120‧‧‧三軸陀螺儀/元件/慣性質量件
121‧‧‧錨
122‧‧‧位移感測器
123‧‧‧位移驅動器
150‧‧‧電焊墊

Claims (20)

  1. 一種多軸整合式MEMS慣性感測器裝置，該裝置包括：一基板部件，其具有一表面區域，該表面區域具有一內部部分及一外部部分；至少一個焊墊，其經組態上覆於該表面區域之該外部部分之隅角的各者；一第一MEMS慣性感測器，其上覆該表面區域之該內部部分；及一第二MEMS慣性感測器，其上覆該表面區域之該外部部分；其中該第一及第二MEMS慣性感測器經組態具有一對稱幾何形狀。
  2. 如請求項1之裝置，其中該對稱幾何形狀由一對稱矩形幾何形狀或一對稱正方形幾何形狀組成。
  3. 如請求項1之裝置，其中該第一MEMS慣性感測器包含一三軸加速度計。
  4. 如請求項3之裝置，其中該加速度計包括在該外部部分內錨定至該基板部件之一慣性質量件。
  5. 如請求項1之裝置，其中該第二MEMS慣性感測器包含一三軸陀螺儀，其中該三軸陀螺儀係一單一遮罩層裝置。
  6. 如請求項5之裝置，其中該陀螺計包括在該內部部分內錨定至該基板部件之一慣性質量件。
  7. 如請求項6之裝置，其中該陀螺儀包括x軸位移感測器、y軸位移感測器及z軸位移感測器；其中該陀螺儀包括經組態以使該慣性質量件移位之一位移驅動器；及其中回應於藉由該位移驅動器使該慣性質量件移位，該x軸、 y軸及z軸位移感測器提供位移資料。
  8. 如請求項1之裝置，進一步包括具有空間上經組態上覆該內部部分之一Z移動制止結構之一蓋晶圓。
  9. 一整合式MEMS裝置，其包括：一半導體基板，其包括一中心區域及繞該中心區域之一邊界區域；一三軸加速度計，其形成於該半導體基板之該中心區域內；及一三軸陀螺儀，其形成於該半導體基板之該邊界區域內。
  10. 如請求項9之裝置，其中該中心區域係選自由大約矩形、大約正方形、大約四邊形及大約多邊形組成之一群組。
  11. 如請求項9之裝置，其中該三軸加速度計包括在該中心區域內錨定至該基板部件之一慣性質量件。
  12. 如請求項9之裝置，其中該三軸陀螺儀包括在該邊界區域內大約鄰近該中心區域錨定至該基板部件之一慣性質量件。
  13. 如請求項12之裝置，其中該三軸陀螺儀包括x軸位移感測器、y軸位移感測器及z軸位移感測器；其中該陀螺儀包括經組態以使該慣性質量件移位之一位移驅動器；及其中回應於藉由使該位移驅動器之該慣性質量件移位，該x軸位移感測器、y軸位移感測器及z軸位移感測器提供位移資料。
  14. 如請求項9之裝置，進一步包括具有空間上經組態上覆該內部部分之一Z移動制止結構之一蓋晶圓。
  15. 如請求項9之裝置，其中以對稱幾何形狀空間上組態該三軸加速度計及三軸陀螺儀。
  16. 如請求項15之裝置，其中該對稱幾何形狀由一對稱矩形幾何形狀或一對稱正方形幾何形狀組成。
  17. 一種多軸整合式MEMS慣性感測器裝置，該裝置包括：一半導體基板，其包括一中心區域及繞該中心區域之一邊界區域；至少一個焊墊，其經組態上覆於該邊界區域之該等隅角的各者；一三軸加速度計，其上覆該中心區域之一部分；一三軸陀螺儀，其上覆該邊界區域之一部分，其中該三軸加速度計及三軸陀螺儀經組態具有一對稱正方形幾何形狀；及一蓋晶圓，其具有空間上經組態上覆該中心區域之一Z移動制止結構。
  18. 如請求項17之裝置，其中該三軸加速度計包括在該中心區域內錨定至該基板部件之一慣性質量件。
  19. 如請求項17之裝置，其中該三軸陀螺儀包括在該邊界區域內大約鄰近該中心區域錨定至該基板部件之一慣性質量件。
  20. 如請求項19之裝置，其中該三軸陀螺儀包括x軸位移感測器、y軸位移感測器及z軸位移感測器；其中該陀螺儀包括經組態以使該慣性質量件移位之一位移驅動器；及其中回應於藉由該位移驅動器使該慣性質量件移位，該x軸位移感測器、y軸位移感測器及z軸位移感測器提供位移資料。
TW103103000A 2013-01-25 2014-01-27 在單一封裝晶片上的多軸整合式微機電系統（ｍｅｍｓ）慣性感測裝置 TWI518302B (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI752993B (zh) * 2016-08-11 2022-01-21 德商羅伯特博斯奇股份有限公司 用於慣性感測器的微機械感測器核心及相關的慣性感測器、製造方法及用途

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10036635B2 (en) 2013-01-25 2018-07-31 MCube Inc. Multi-axis MEMS rate sensor device
US10046964B2 (en) 2013-03-07 2018-08-14 MCube Inc. MEMS structure with improved shielding and method
JP6339669B2 (ja) 2013-07-08 2018-06-06 モーション・エンジン・インコーポレーテッド Ｍｅｍｓデバイスおよび製造する方法
US10273147B2 (en) 2013-07-08 2019-04-30 Motion Engine Inc. MEMS components and method of wafer-level manufacturing thereof
WO2015013828A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor and method of manufacturing
WO2015103688A1 (en) 2014-01-09 2015-07-16 Motion Engine Inc. Integrated mems system
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
WO2015184531A1 (en) 2014-06-02 2015-12-10 Motion Engine Inc. Multi-mass mems motion sensor
US11287486B2 (en) 2014-12-09 2022-03-29 Motion Engine, Inc. 3D MEMS magnetometer and associated methods
CA3220839A1 (en) 2015-01-15 2016-07-21 Motion Engine Inc. 3d mems device with hermetic cavity
TWI556169B (zh) 2015-03-24 2016-11-01 溫瓌岸 泛用型多功能感測器服務平台
CN104807454B (zh) * 2015-04-29 2017-07-18 东南大学 一种单片集成六自由度微惯性测量单元及其加工方法
DE102016122042B4 (de) 2015-11-20 2022-02-17 Jena Optronik Gmbh Sensorbaugruppe zur Lageermittlung eines Objekts
US10041854B2 (en) * 2015-12-10 2018-08-07 Panasonic Corporation Identification of a seal failure in MEMS devices
US10209157B2 (en) 2015-12-10 2019-02-19 Invensense, Inc. Dual-sealed MEMS package with cavity pressure monitoring
EP3315975B1 (en) * 2016-10-26 2019-04-24 NXP USA, Inc. Stiction detection and recovery in a micro-electro-mechanical system device
CN107063223B (zh) * 2017-04-17 2019-04-30 东南大学 单片式谐振加速度计陀螺仪结构
DE102017208357A1 (de) * 2017-05-18 2018-11-22 Robert Bosch Gmbh Mikroelektromechanisches Bauelement
US11005167B2 (en) * 2017-11-03 2021-05-11 Antenum Llc Low profile antenna-conformal one dimensional
US11733263B2 (en) 2018-09-21 2023-08-22 Analog Devices, Inc. 3-axis accelerometer
US11891297B2 (en) * 2019-07-05 2024-02-06 Aac Acoustic Technologies (Shenzhen) Co., Ltd. Motion control structure and actuator

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4075022B2 (ja) * 1998-06-24 2008-04-16 アイシン精機株式会社 角速度センサ
KR100436367B1 (ko) * 2001-12-14 2004-06-19 삼성전자주식회사 수직 진동 질량체를 갖는 멤스 자이로스코프
US6859751B2 (en) * 2001-12-17 2005-02-22 Milli Sensor Systems & Actuators, Inc. Planar inertial measurement units based on gyros and accelerometers with a common structure
US6725719B2 (en) 2002-04-17 2004-04-27 Milli Sensor Systems And Actuators, Inc. MEMS-integrated inertial measurement units on a common substrate
US7122395B2 (en) 2002-12-23 2006-10-17 Motorola, Inc. Method of forming semiconductor devices through epitaxy
CN101069099A (zh) * 2003-02-24 2007-11-07 佛罗里达大学 微机械加工的集成单片三轴加速度计
US7368312B1 (en) * 2004-10-15 2008-05-06 Morgan Research Corporation MEMS sensor suite on a chip
US7562573B2 (en) * 2005-07-21 2009-07-21 Evigia Systems, Inc. Integrated sensor and circuitry and process therefor
US7621183B2 (en) * 2005-11-18 2009-11-24 Invensense Inc. X-Y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging
US20070164378A1 (en) * 2006-01-13 2007-07-19 Honeywell International Inc. Integrated mems package
US7578189B1 (en) * 2006-05-10 2009-08-25 Qualtre, Inc. Three-axis accelerometers
US7900512B2 (en) 2006-07-25 2011-03-08 Denso Corporation Angular rate sensor
US20100071467A1 (en) 2008-09-24 2010-03-25 Invensense Integrated multiaxis motion sensor
US8047075B2 (en) * 2007-06-21 2011-11-01 Invensense, Inc. Vertically integrated 3-axis MEMS accelerometer with electronics
US7923790B1 (en) 2007-03-09 2011-04-12 Silicon Laboratories Inc. Planar microshells for vacuum encapsulated devices and damascene method of manufacture
US8061201B2 (en) 2007-07-13 2011-11-22 Georgia Tech Research Corporation Readout method and electronic bandwidth control for a silicon in-plane tuning fork gyroscope
US7677099B2 (en) * 2007-11-05 2010-03-16 Invensense Inc. Integrated microelectromechanical systems (MEMS) vibrating mass Z-axis rate sensor
JP4508230B2 (ja) * 2007-11-21 2010-07-21 ソニー株式会社 慣性センサ及びその検出装置
US8156806B1 (en) * 2007-12-10 2012-04-17 Milli Sensor Systems & Actuators Inertial measurement unit for spin-stabilized aerial vehicles, and method of providing guidance information using same
US7800190B2 (en) 2008-06-16 2010-09-21 Honeywell International Inc. Getter on die in an upper sense plate designed system
US8939029B2 (en) 2008-09-05 2015-01-27 Analog Devices, Inc. MEMS sensor with movable Z-axis sensing element
US7966880B2 (en) * 2008-10-13 2011-06-28 Hewlett-Packard Development Company, L.P. Adjusting the damping level of an encapsulated device
TW201020548A (en) 2008-11-18 2010-06-01 Ind Tech Res Inst Multi-axis capacitive accelerometer
US8205498B2 (en) 2008-11-18 2012-06-26 Industrial Technology Research Institute Multi-axis capacitive accelerometer
GB2467776A (en) 2009-02-13 2010-08-18 Wolfson Microelectronics Plc Integrated MEMS transducer and circuitry
WO2010107016A1 (ja) 2009-03-16 2010-09-23 パナソニック電工株式会社 Ｍｅｍｓデバイス
IT1394007B1 (it) * 2009-05-11 2012-05-17 St Microelectronics Rousset Struttura microelettromeccanica con reiezione migliorata di disturbi di accelerazione
EP2430656A1 (en) 2009-05-14 2012-03-21 Megica Corporation System-in packages
FR2945621B1 (fr) * 2009-05-15 2011-08-26 Commissariat Energie Atomique Structure de couplage pour gyrometre resonnant
US8823007B2 (en) 2009-10-28 2014-09-02 MCube Inc. Integrated system on chip using multiple MEMS and CMOS devices
US8710599B2 (en) 2009-08-04 2014-04-29 Fairchild Semiconductor Corporation Micromachined devices and fabricating the same
ITTO20091042A1 (it) 2009-12-24 2011-06-25 St Microelectronics Srl Giroscopio integrato microelettromeccanico con migliorata struttura di azionamento
US8584522B2 (en) * 2010-04-30 2013-11-19 Qualcomm Mems Technologies, Inc. Micromachined piezoelectric x-axis gyroscope
US8487398B2 (en) 2010-07-14 2013-07-16 Freescale Semiconductor, Inc. Capacitor device using an isolated well and method therefor
CN103221778B (zh) 2010-09-18 2016-03-30 快捷半导体公司 具有单驱动的微机械单片式三轴陀螺仪
JP2014504364A (ja) 2010-12-08 2014-02-20 マイクロファイン・マテリアルズ・テクノロジーズ・ピーティーイー・リミテッド 高性能湾曲加速度計
US8878312B2 (en) 2011-03-01 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical bypass structure for MEMS device
US9540230B2 (en) 2011-06-27 2017-01-10 Invensense, Inc. Methods for CMOS-MEMS integrated devices with multiple sealed cavities maintained at various pressures
US20130042686A1 (en) 2011-08-17 2013-02-21 Sitronix Technology Corp. Inertia sensing apparatus
US10036635B2 (en) 2013-01-25 2018-07-31 MCube Inc. Multi-axis MEMS rate sensor device
US9249012B2 (en) 2013-01-25 2016-02-02 Mcube, Inc. Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI752993B (zh) * 2016-08-11 2022-01-21 德商羅伯特博斯奇股份有限公司 用於慣性感測器的微機械感測器核心及相關的慣性感測器、製造方法及用途

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