TWI516649B - - Google Patents

Info

Publication number
TWI516649B
TWI516649B TW103122072A TW103122072A TWI516649B TW I516649 B TWI516649 B TW I516649B TW 103122072 A TW103122072 A TW 103122072A TW 103122072 A TW103122072 A TW 103122072A TW I516649 B TWI516649 B TW I516649B
Authority
TW
Taiwan
Application number
TW103122072A
Other versions
TW201502325A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201502325A publication Critical patent/TW201502325A/zh
Application granted granted Critical
Publication of TWI516649B publication Critical patent/TWI516649B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
TW103122072A 2013-06-27 2014-06-26 晶片蝕刻方法 TW201502325A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310271160.5A CN104253017B (zh) 2013-06-27 2013-06-27 基片刻蚀方法

Publications (2)

Publication Number Publication Date
TW201502325A TW201502325A (zh) 2015-01-16
TWI516649B true TWI516649B (zh) 2016-01-11

Family

ID=52141076

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103122072A TW201502325A (zh) 2013-06-27 2014-06-26 晶片蝕刻方法

Country Status (3)

Country Link
CN (1) CN104253017B (zh)
TW (1) TW201502325A (zh)
WO (1) WO2014206296A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108133888B (zh) * 2016-12-01 2022-04-22 北京北方华创微电子装备有限公司 一种深硅刻蚀方法
CN111129955B (zh) * 2019-12-04 2021-05-18 中国电子科技集团公司第十三研究所 一种低温等离子体干法刻蚀方法及其应用

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
JP2000150477A (ja) * 1998-11-12 2000-05-30 Nec Corp ドライエッチング方法
US6599437B2 (en) * 2001-03-20 2003-07-29 Applied Materials Inc. Method of etching organic antireflection coating (ARC) layers
TWI243404B (en) * 2001-05-24 2005-11-11 Lam Res Corp Applications of oxide hardmasking in metal dry etch processors
CN1169198C (zh) * 2002-05-13 2004-09-29 华南师范大学 一种紧凑型感应耦合低温等离子体干法刻蚀系统
KR100604535B1 (ko) * 2004-12-31 2006-07-24 동부일렉트로닉스 주식회사 금속 피팅 개선 방법
CN100524615C (zh) * 2006-12-14 2009-08-05 上海华虹Nec电子有限公司 射频器件薄介电质电容的刻蚀方法
CN101285189B (zh) * 2007-04-12 2010-05-19 上海宏力半导体制造有限公司 减少金属刻蚀工艺反应腔室产生沉积物的方法
CN102468145A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 金属栅极的形成方法
CN102983076A (zh) * 2011-09-07 2013-03-20 中国科学院微电子研究所 半导体集成电路制造方法
CN102738074B (zh) * 2012-07-05 2014-07-02 中微半导体设备(上海)有限公司 半导体结构的形成方法

Also Published As

Publication number Publication date
CN104253017A (zh) 2014-12-31
CN104253017B (zh) 2018-05-08
TW201502325A (zh) 2015-01-16
WO2014206296A1 (zh) 2014-12-31

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