TWI513984B - Probe card fixture, probe inspection device, and probe inspection method - Google Patents

Description

Probe card fixing device, probe inspection device, and probe inspection method

The present invention relates to a probe card fixing device, a probe inspection device, a probe inspection method, and a probe card, and more particularly to a position of a front end of a probe which can be suppressed by thermal expansion of a probe card or a card holder. Variable probe card holder, probe inspection device, probe inspection method, and probe card.

A probe card for inspecting an IC (Integrated Circuit) wafer formed on a wafer includes a card substrate and a plurality of probes (also referred to as pointers). In the inspection step, the plurality of probes are respectively brought into contact with the electrode pads of the IC wafer, and the electrical characteristics of the IC wafer are measured. In addition, in order to improve the inspection efficiency and the like, the wafer is subjected to a high temperature state, and the electrical characteristics of the IC wafer are measured (for example, refer to Patent Documents 1 to 3). In addition, in recent years, with the miniaturization and high integration of semiconductor devices, the narrow pitch of probes has been advanced, and it has been required to perform alignment of probes and electrode pads with higher precision.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 7-98330

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-200272

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2005-181284

When the wafer is in a high temperature state for inspection (ie, high temperature inspection), The wafer-mounted stage is heated by a heater built in the stage. Thereby, the wafer is heated to a preset temperature. Here, since the probe card is disposed above the wafer, the surface of the probe card is warmed due to the radiant heat from the wafer or the conduction heat from the probe in contact with the electrode pad. The temperature rises. At this time, since the probe card has a thickness, the heat transfer property is lower than that of the metal, and there is no heat source such as a high temperature on the side of the upper surface, so a temperature difference occurs between the upper surface and the lower surface of the probe card. (thermal gradient). Further, there is a problem that "the warp deformation of the lower side bump" occurs in the probe card due to the temperature difference between the upper and lower surfaces. Moreover, the card holder holding the probe card is also swollen by the radiation heat and deformed.

Further, the degree of deformation varies depending on the positional relationship between the wafer and the probe card (card holder). For example, when the IC wafer 411 located at the outer periphery of the wafer 410 is inspected and the IC wafer 411 located at the center of the wafer 410 is inspected, the size of the radiant heat received by the lower surface 401 of the probe card 400 is different. The shape of the curved deformation is different.

Specifically, as shown in FIGS. 18( a ) and ( b ), when the IC wafer 411 located on the outer peripheral portion of the wafer 410 is inspected, since one portion of the probe card 400 is exposed from the upper side of the stage 420, The portion exposed to the outside receives less radiant heat, so that the temperature of the probe card 400 is relatively lowered. Therefore, the warpage deformation generated in the probe card 400 is small. If the warping deformation is small, the displacement of the front end position of the probe 402 to the lower side is small, so the force of the probe 402 pressing the electrode pad (ie, the pressing pressure) is controlled to a preset value (ie, setting Within the range of values). Therefore, as shown in FIG. 18(b), the stitch formed on the electrode pad due to the contact with the probe 402 is small.

On the other hand, as shown in FIGS. 19(a) and 19(b), when the IC wafer 411 located at the center of the wafer 410 is inspected, since the probe card 400 is not exposed from above the stage 420, the probe is exposed. The radiant heat received by the lower surface 401 of the card 400 is large, and the temperature of the probe card 400 is relatively large. Therefore, the warpage deformation generated in the probe card 400 is large. If the warping deformation is large, the displacement of the front end position of the probe 402 to the lower side is large, so the pressing pressure exceeds the set value. because Thus, as shown in Fig. 19 (b), the stitch remaining on the electrode pad becomes large.

When the pressing pressure is large, it is possible that the front end of the probe 402 is wiped over the electrode pad and exposed to the passivation film, thereby rubbing the passivation film and causing damage to the passivation film. Moreover, there is also a possibility that the front end of the probe 402 penetrates the electrode pad to break the structure of the device below.

Further, in Citation 1, it is described that the displacement of the needle position is reduced by fixing the probe to a support plate having a small coefficient of linear expansion. However, even with this method, the needle position is affected by the expansion (i.e., thermal expansion) caused by the heat of the substrate at a very high or low temperature. Moreover, the longitudinal linear expansion of the needle pressing of the free-cutting ceramics cannot be ignored. Further, in Citation 2, it is described that the heat transfer member is interposed between the probe substrate and the reinforcing plate to improve heat dissipation from the probe substrate to the reinforcing plate. However, even with this method, it is difficult to reduce the temperature difference between the lower surfaces of the probe substrate, and it is difficult to reduce the warpage deformation caused by the temperature difference between the upper and lower surfaces.

Further, a reference numeral 3 discloses a card holder that holds a probe card. In the card holder, a plurality of slit portions or through holes (hereinafter referred to as slits) are provided from the open end of the opening portion at the center portion toward the outer peripheral end. However, when this method is used, although the lateral stress generated by the thermal expansion of the card holder can be absorbed by the deformation of the slit disposed in the lateral direction, the stress in the thickness direction is not set, for example, in the thickness direction. The slit is considered to be insufficiently absorbed.

Further, as a method of coping with stress in the thickness direction, a method of making the card holder thicker than before is also considered. However, in this method, in order to ensure the distance between the card holder and the wafer, it is necessary to increase the probe to a degree that the card holder is thickened, so that the variation in the displacement amount of the probe becomes large.

Accordingly, the present invention has been made in view of such circumstances, and an object thereof is to provide a probe card fixing device and a probe inspection capable of suppressing a change in a position of a front end of a probe caused by thermal expansion of a probe card or a card holder. Device, probe inspection method and probe card.

In order to solve the above problems, a probe card fixing device according to an aspect of the present invention is characterized in that the probe card is fixed to the probe device, and includes a connection ring for fixing to the above. a housing of the prober; a card holder for clamping an outer peripheral portion of the probe card between the connecting ring; and a locking device for fixing a central portion of the probe card and the connecting ring . Here, the "card holder" is, for example, an annular support plate that holds the outer peripheral portion of the probe card. Further, the "connection ring" is, for example, an annular relay substrate electrically connected to the probe card and the tester.

Further, in the probe card fixing device, the locking device includes a first component fixed to the central portion of the probe card, a second component fixed to the connecting ring, and a connection and fixing of the first component 1 part and the 3rd part of the above 2nd part.

Further, in the probe card fixing device, the first component includes a support member disposed at a distance from a surface of the probe card that is in contact with the connection ring, and the probe a plurality of pillars between the needle card and the support member, and the plurality of pillars include a material having a linear expansion coefficient smaller than that of the second component.

A probe inspection device according to another aspect of the present invention includes the probe card fixing device and a probe card, and the probe card fixing device is attached to the probe card.

According to still another aspect of the present invention, in the probe inspection method, when the probe is inspected by using a probe card that is held by a card holder and a connecting ring, the probe card is connected to the connecting ring in advance. A locking device is disposed on the side of the contact side, and the center portion of the probe card and the connecting ring are fixed by the locking device.

Further, in the probe inspection method described above, the connection ring is fixed to the housing of the probe device in advance when the probe inspection is performed.

A probe card according to still another aspect of the present invention includes: a probe card substrate having a front end of the probe on one side thereof; and a support member disposed on the other side of the probe card substrate; and plural a root pillar, which is interposed between the probe card substrate and the support structure And the plurality of pillars include a first pillar and a second pillar disposed further away from a center portion of the probe card substrate than the first pillar, and the second pillar has a thermal expansion coefficient greater than the first pillar The rate of thermal expansion.

Further, in the above probe card, the plurality of pillars each include a plurality of the first pillars and the second pillars, and the plurality of first pillars are provided at a central portion of the probe card substrate The center of the circle is disposed at equal intervals on the first circumference, and the plurality of second pillars are disposed at equal intervals on the second circumference which is concentric with the first circumference and has a diameter larger than the first circumference.

Further, in the above probe card, the plurality of pillars further include a third pillar disposed on a central portion of the probe card substrate, and the third pillar has a thermal expansion coefficient smaller than that of the first pillar Thermal expansion rate. Here, in the center portion of the probe card substrate, it is difficult to arrange a so-called dead space of an electronic component. The reason why the center portion is a dead space is that in order to make the electrical characteristics favorable, it is often the case that the electronic component is as close as possible to the connection point between the probe and the probe card substrate, and on the other hand, the probe is radially arranged. In many cases, the center portion of the probe card substrate is often GND (ground), and as a result, the number of components mounted on the center of the probe card is extremely small.

Further, in the probe card described above, the number of the second pillars is larger than the number of the first pillars.

According to an aspect of the present invention, a portion (e.g., a central portion) of the probe card that is located further inward than the outer peripheral portion is coupled and fixed to the connecting ring by the probe card fixing device. Moreover, the connecting ring can be fixed to the housing of the prober. The housing of the prober is kept away from the heat source of the high temperature inspection (for example, the heater in the stage), and thus the heat variation is small. Since the housing with less thermal variation can be used as the support point of the probe card, it is possible to suppress the "warping deformation of the lower side protrusion" of the probe card or the displacement or deformation of the card holder. The needle card moves to the lower side. Thereby, the fluctuation of the position of the front end of the probe can be suppressed (for example, the displacement amount is extremely small).

According to an aspect of the present invention, the force against warpage is applied to the probe card substrate by the difference in thermal expansion rates of the first and second pillars. By the two forces canceling each other, the warpage deformation caused by the temperature difference between the upper and lower surfaces of the probe card substrate can be alleviated. Thereby, the amount of displacement of the front end position of the probe can be reduced.

1‧‧‧ stage

3‧‧‧Shell

10‧‧‧ probe card

11‧‧‧ card substrate

11a‧‧‧ upper surface

11b‧‧‧ lower surface

13‧‧‧ probe

13a‧‧‧ front end

15‧‧‧ needle holder

20‧‧‧ card holder

21‧‧‧Sheet Department

23‧‧ ‧ step

30‧‧‧Connecting ring

31‧‧ ‧spring pin

35‧‧‧ screws

50‧‧‧PCLS

51‧‧‧lower parts

52‧‧‧lower support

53‧‧‧ pillar

54‧‧‧ screws

55‧‧‧ screws

61‧‧‧Upper parts

62‧‧‧Upper support

63‧‧‧Connecting Department

64‧‧‧ screws

65‧‧‧ screws

71‧‧‧ screws

100‧‧‧ probe inspection device

110‧‧‧Probe card substrate

111‧‧‧ (on the probe card substrate) upper surface

112‧‧‧ (the base of the probe card substrate)

113‧‧‧ screw holes

120‧‧‧ probe

121‧‧‧ front end

123‧‧‧ needle holder

130‧‧‧Support members

Upper surface of 131‧‧‧ (support member)

132‧‧‧ (support member) lower surface

133‧‧‧ screw holes

150‧‧‧ pillar

151‧‧‧1st pillar

152‧‧‧2nd pillar

153‧‧‧3rd pillar

155‧‧‧Electronic parts

161‧‧‧screw

162‧‧‧ screws

163‧‧‧ screws

166‧‧‧ screws

167‧‧‧ screws

171‧‧‧1st circumference

172‧‧‧2nd circumference

200‧‧‧ probe card

230‧‧‧Support plate (a circular and plate-shaped support member)

300‧‧‧ probe card

330‧‧‧Support plate (a circular and plate-shaped support member)

400‧‧‧ Probe Card

401‧‧‧ lower surface

402‧‧‧Probe

410‧‧‧ wafer

411‧‧‧ IC chip

420‧‧‧

F1‧‧‧ force

F2‧‧‧ force

F3‧‧‧ force

1 is a cross-sectional view showing an example of a configuration of a main part of a probe inspection device 100 according to a first embodiment of the present invention.

2(a) and 2(b) are perspective views showing a configuration example of the lower part 51 and the upper part 61 of the PCLS 50.

Fig. 3 is a plan view showing a configuration example of the PCLS 50.

Fig. 4 is a conceptual diagram showing forces F1, F2, and F3 applied to the probe card 10 at the time of high temperature inspection.

Fig. 5 is a view showing an example of loading and unloading of the PCLS 50.

Fig. 6 is a view showing the results obtained by the inventors for verifying the effect of PCLS.

Fig. 7 is a view showing a variation of the PCLS 50.

Fig. 8 is a view showing a variation of the PCLS 50.

9(a) to 9(c) are views showing a configuration example of a probe card 200 according to a second embodiment of the present invention.

Fig. 10 is a view showing forces F1 and F2 applied to the probe card substrate 110 at the time of high temperature inspection.

Fig. 11 is a view showing a variation of the probe card 200.

12(a) and 12(b) are diagrams showing a variation of the probe card 200.

Fig. 13 is a view showing a configuration example of a probe card 300 according to a third embodiment of the present invention.

Fig. 14 is a view showing a variation of the probe card 300.

Fig. 15 is a view showing a variation of the probe card 300.

Fig. 16 is a view showing a variation of the probe card 300.

Fig. 17 is a view showing a configuration example of a support plate 330 according to a fourth embodiment of the present invention.

18(a) and (b) are diagrams for explaining the problem.

19(a) and 19(b) are diagrams for explaining the problem.

Hereinafter, embodiments of the present invention will be described using the drawings. In the respective drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

"First Embodiment"

(constitution)

1 is a cross-sectional view showing an example of a configuration of a main part of a probe inspection device 100 according to a first embodiment of the present invention. The probe inspection device 100 is a device for inspecting electrical characteristics or functions of, for example, an IC chip formed on a wafer. As shown in FIG. 1, the probe inspection apparatus 100 includes a stage 1 on which a wafer is placed and fixed, a case 3, a probe card 10 disposed above the stage 1, and a card holder holding the probe card 10. 20. A connection ring 30 of a probe card 10 and a tester (not shown) and a PCLS (Probe Card Lock System) 50 are electrically connected.

The stage 1 and the housing 3 are part of the prober. A heat source such as a heater is incorporated in the stage 1. The wafer placed on the stage 1 is heated by a heater built in the stage 1. Thereby, the wafer is heated to a preset temperature, so that high temperature inspection can be performed. Further, the casing 3 covers one of the upper surface side and the side surface side of the prober, and contains a highly rigid metal such as a coated iron plate or a stainless steel plate.

The probe card 10 has a card substrate 11. The card substrate 11 contains, for example, epoxy glass. The shape (i.e., planar shape) of the card substrate 11 in a plan view is, for example, a circular shape. The size of the card substrate 11 is, for example, 100 to 300 mm in diameter and 3.2 to 4.8 mm in thickness. Further, on the upper surface 11a of the card substrate 11, for example, a circuit or an electronic component (not shown) is mounted. Further, a plurality of probes 13 connected to the above-described circuit, electronic components, and the like are mounted on the card substrate 11. The probe 13 is fixed by, for example, a needle holder 15 disposed on the lower surface 11b side of the card substrate 11, and is preceded by The end 13a is located on the lower surface 11b side of the card substrate 11. The number and arrangement interval of the probes 13 correspond to the number and arrangement intervals of the electrode pads of the inspection target (that is, the IC wafer formed on the wafer). Further, in order to connect to the plurality of pillars described below, a plurality of screw holes penetrating between the upper surface 11a and the lower surface 11b are provided on the card substrate 11.

The card holder 20 is detachably holding the probe card 10. The planar shape of the card holder 20 is, for example, an annular shape (that is, a shape having an opening at the center portion). Further, a thin plate portion 21 having a smaller thickness than the other portions is provided at the edge of the opening of the card holder 20. The outer peripheral portion of the probe card 10 is placed on the thin plate portion 21. Further, a step 23 is provided between the thin plate portion 21 and another portion on the outer side of the thin plate portion 21, and the thin plate portion 21 is one step lower than the other portions. This step 23 is formed along the outer circumference of the probe card 10, and restricts the movement of the probe card 10 placed on the thin plate portion 21 in the horizontal direction (for example, the X and Y axis directions). The thickness of the thin plate portion 21 of the card holder 20 is, for example, 2 mm, and the thickness of the other portion is, for example, 5 mm, and the step is, for example, 3 mm (= 5 mm - 2 mm). Further, although not shown, a clamping mechanism for connecting and fixing to the casing 3 is provided on the outer peripheral portion of the card holder 20.

Further, the card holder 20 is disposed at a position close to the stage 1 and which is susceptible to heat during high temperature inspection. Therefore, the card holder 20 preferably contains a material having a relatively small coefficient of linear expansion such as low thermal expansion cast iron (registered trademark). The linear expansion coefficient of the low thermal expansion cast iron (registered trademark) is, for example, 2 to 5 ppm/°C. Thereby, it is possible to suppress thermal expansion of the card holder 20 at the time of high temperature inspection.

The connecting ring 30 is, for example, a test head and a probe card 10 that are electrically connected to a tester (not shown). A plurality of spring pins (that is, movable pins that are extended and contracted by springs at the front end of the pin) 31 are formed in the connecting ring 30. The connecting ring 30 is disposed on the upper surface 11a side of the probe card 10. Further, one end of the spring pin 31 abuts against the electrode portion of the probe card 10 (i.e., contacts in a contact state), and the other end of the spring pin 31 abuts against the electrode portion of the test head. Thereby, the outer peripheral portion of the probe card 10 is sandwiched from the upper and lower sides by the thin plate portion 21 of the card holder 20 and the spring pin 31 of the connecting ring 30.

Further, a screw hole for connecting the connecting ring 30 to the casing 3 of the prober, for example, is provided on the outer peripheral portion of the connecting ring 30. The connecting ring 30 is coupled and fixed to the housing 3 (ie, screwed) by passing a screw (ie, screwing) in the screw hole of the outer peripheral portion and the screw hole of the housing 3.

The PCLS 50 is disposed on the upper surface 11a side of the probe card 10, that is, the surface of the probe card 10 that is in contact with the connection ring 30, and is connected to the inner side of the probe card 10 (for example, the center). The part is fixed to the connection ring 30. As shown in FIG. 1, the PCLS 50 includes, for example, a lower portion 51 fixed to the center portion of the probe card 10, a member 61 fixed to the upper side of the connecting ring 30, and a screw 71 for connecting and fixing the upper member 61 and the lower member 51. .

First, the lower part 51 will be described. The lower side member 51 includes a lower side support portion 52 disposed between the probe card 10 and the lower side support portion 52 at a distance from the upper surface 11a of the probe card 10, for lowering The side support portion 52 is fixed to a screw 54 on one end side of each of the stays 53 and a screw 55 for fixing the probe card 10 to the other end of each of the stays 53.

The lower side support portion 52 supports the probe card 10. The lower support portion 52 includes, for example, SUS430 (β = 10.4 × 10 ^-6 ° C, 0 to 100 ° C) or SUS 410 (β = 11.0 × 10 ^-6 ° C, 0) in JIS (Japanese Industrial Standards) specifications. 100 ° C) and other stainless steel. Here, β means the coefficient of thermal expansion. Further, the term "0 to 100 ° C" means the value of the coefficient of thermal expansion in the range of 0 to 100 ° C. The stainless steel material is suitable as the material of the lower side support portion 52 because it is inexpensive and easy to process, and can easily obtain high rigidity.

2(a) and 2(b) are perspective views showing a configuration example of the lower part 51 and the upper part 61 of the PCLS 50. As shown in FIG. 2(a), the shape of the lower side support portion 52 is, for example, a cross (cross) shape. Further, regarding the size of the lower support portion 52, for example, the length from one end to the other end of the cross is 100 to 300 mm, and the thickness is 5 to 20 mm. Further, as shown in FIG. 1, a plurality of screw holes for connecting to the respective pillars 53 are provided on the lower support portion 52, and are connected to the upper member 61 (that is, for the screw 71 to pass through). Screw hole.

Each of the pillars 53 connects the probe card 10 and the support member. The length of each of the pillars 53 is, for example, 10 to 20 mm. The length of each of the pillars 53 corresponds to the distance between the probe card 10 and the lower support portion 52. Moreover, as shown in FIG. 1, each of the pillars 53 is provided with a screw hole penetrating in the longitudinal direction (for example, the Z-axis direction). Each of the pillars 53 is coupled and fixed to the lower support portion 52 by passing the screw 54 through the screw hole provided in the lower support portion 52 and the screw hole of the support post 53.

Further, each of the stays 53 is coupled and fixed to the probe card 10 by passing the screw 55 through the screw hole formed in the probe card 10 and the screw hole formed in the stay 53.

Each of the pillars 53 constitutes a position of the PCLS 50 that is disposed closest to the probe card 10 and is most susceptible to heat during high temperature inspection. Therefore, each of the pillars 53 preferably contains a material having a very small thermal expansion rate such as Super Invar (β = ± 0.1 × 10 ^-6 / ° C, 0 to 100 ° C). Further, the screws 54, 55 (especially the screws 55) which pass through the screw holes of the respective struts 53 are also preferably made of a material having a small thermal expansion rate such as Super Invar. However, in the first embodiment, the material constituting the pillar 53 and the screws 54 and 55 is not limited to the super Invar. Further, it is preferable that a space is secured between the opposing screw 54 and the screw 55 in the screw hole of each of the stays 53, so that the screws 54 and 55 do not press each other when the screws 54 and 55 are thermally expanded.

Next, the upper part 61 will be described. The upper member 61 includes an upper support portion 62, a coupling portion 63 that connects the upper support portion 62 to the coupling ring 30, a screw 64 that fixes the upper support portion to the coupling portion 63, and a fixing portion 63 that is fixed to the connecting ring. A screw 65 of 30 (for example, refer to Fig. 2(b)).

The upper support portion 62 supports the probe card 10. The upper support portion 62 includes, for example, a stainless steel material such as SUS430 or SUS410 in the JIS standard. As described above, stainless steel steel is inexpensive and easy to process, and high rigidity can be easily obtained. Therefore, the stainless steel material is suitable not only as the material of the lower side support portion 52 but also as the material of the upper side support portion 62.

As shown in FIG. 2(b), the shape of the upper side support portion 62 is, for example, a cross (cross) shape. Further, regarding the size of the upper support portion 62, for example, the length from one end of the cross to the other end is 100~300mm, thickness is 5~20mm. Further, as shown in FIG. 1, a plurality of screw holes for connecting to the connecting portion 63 are provided on the upper support portion 62, and are connected to the lower member 51 (that is, for the screw 71 to pass through). Screw hole.

The connection portion 63 is a stainless steel material such as SUS430 or SUS410 in the JIS standard, in which the PCLS 50 is connected and fixed to the connection ring 30. The shape of the connecting portion 63 is, for example, a ring shape. The outer peripheral surface of the joint portion 63 is along the inner circumferential surface of the joint ring 30. When the connection portion 63 is attached to the connection ring 30, the inner circumferential surface of the connection ring 30 surrounds the connection portion 63, and the movement of the connection portion 63 in the horizontal direction is restricted.

Further, a plurality of screw holes for connecting to the upper support portion 62 and a plurality of screw holes for connecting to the connection ring 30 are provided in the connection portion 63. The upper support portion 62 is coupled and fixed to the joint portion 63 by passing the screw 64 through the screw hole of the upper support portion 62 and the screw hole provided in the joint portion 63. Further, as shown in FIG. 2(b), the connecting portion 63 is coupled and fixed to the connecting ring by passing the screw 65 through the screw hole of the connecting portion 63. Further, the screws 64 and 65 include, for example, a stainless steel material.

Fig. 3 is a plan view showing a configuration example of the PCLS 50. As shown in FIG. 3, the upper side support portion 62 is larger than the lower side support portion 52, for example, in plan view. The upper support portion 62 is disposed on the lower support portion so as to completely cover the upper surface of the lower support portion 52, and is fixed by a screw 71.

(action. role)

Fig. 4 is a conceptual diagram showing forces F1, F2, and F3 applied to the probe card 10 at the time of high temperature inspection. When the probe card 10 is used for high-temperature inspection, the heater is built in the stage shown in FIG. 1, and the heater built in the stage is energized to heat the stage. Thereby, the temperature of the wafer rises to, for example, 150 ° C to 200 ° C by the spacer. Further, after the temperature of the wafer is stabilized, the probe of the probe card 10 is brought into contact with the electrode pad of the IC wafer formed on the wafer, and the electrical characteristics of the IC wafer are measured.

In this process, the radiant heat from the wafer or the conduction heat from the probe is transferred to the lower surface 11b of the probe card 10. Thereby, the temperature of the probe card 10 rises from the side of the lower surface 11b, and A temperature difference (thermal gradient) is generated between the lower surface 11b and the upper surface 11a. As shown in FIG. 4, the force F1 of the "warp deformation of the lower side protrusion" is applied to the probe card 10 due to the temperature difference.

Further, the card holder 20 holding the probe card 10 is also thermally expanded from the wafer or the stage by radiating heat, and is intended to be displaced or deformed to the lower side. If the card holder 20 is displaced and deformed to the lower side, since the probe card is supported by the card holder, the probe card 10 generates a force F2 to be moved downward by gravity.

Here, the inner side (for example, the center portion) of the probe card 10 is connected and fixed to the connecting ring 30 by the PCLS 50. Further, the connecting ring 30 is fixed to the housing 3 of the prober. The housing 3 of the prober is away from a heat source such as a stage, and the heat variation is small. Therefore, with the housing 3 of the prober as a support point, the PCLS 50 can apply a force F3 opposite to the above-described forces F1, F2 to the probe card 10. This force F3 counteracts the forces F1, F2 and reduces the forces F1, F2.

Further, in the high-temperature inspection, since the probe card 10 is relatively moved relative to the wafer, the amount of radiated heat received by the probe card 10 or the card holder 20 fluctuates, and the forces F1 and F2 also fluctuate. For example, as shown in FIG. 18, when the probe is moved from the center portion to the outer peripheral portion of the wafer, at least a part of the probe card 10 is separated from the upper side of the stage 1 when moving to the cleaning area. When the probe card 10 is separated from the upper side of the stage 1, the amount of radiation heat received by the lower surface 11b of the probe card 10 becomes small, so that the temperature difference between the upper and lower surfaces becomes small. Thereby, the force F1 of the "warping deformation of the lower side protrusion" is changed in the probe card. At this time, the force F3 transmitted from the PCLS 50 to the probe card 10 is also changed, for example, in each of the pillars 53 in accordance with the action of the force and the law of reaction. Therefore, in the case of inspecting the IC wafer located on the outer periphery of the wafer, the force F3 also cancels the forces F1, F2, and the forces F1, F2 are reduced.

In the first embodiment, the lower member 51 corresponds to the "first component" of the present invention, the upper component 61 corresponds to the "second component" of the present invention, and the screw 71 corresponds to the "third component" of the present invention. Further, the lower support portion 52 corresponds to the "support member" of the present invention. Further, the PCLS 50 corresponds to the "locking device" of the present invention. Further, the combination of the connection ring 30 and the card holder 20 and the PCLS 50 corresponds to the "probe card fixing device" of the present invention.

(Effects of the first embodiment)

The first embodiment of the present invention exerts the following effects.

(1) The center portion of the probe card 01 is coupled and fixed to the connecting ring 30 by the PCLS 50. Further, the connecting ring 30 is fixed to the housing 3 of the prober. The housing 3 of the prober is kept away from the heat source of the high temperature inspection, and the heat variation is small. Since the casing 3 having a small heat variation can be used as a support point of the probe card 10, the "warp deformation of the lower projection" caused by thermal expansion of the probe card 10 or the card holder 20 can be suppressed. The shifting or deformation causes the probe card 10 to move to the lower side. With this configuration, it is possible to suppress the variation of the position (i.e., the front end position) of the front end 13a in the non-contact state without contact with the electrode pad or the like of the IC wafer, and to shift the position of the front end in the non-contact state. The amount is very small.

(2) The PCLS 50 includes a lower portion 51 fixed to the center portion of the probe card 10, a member 61 fixed to the upper side of the connecting ring 30, and a screw 71 that connects and fixes the lower member 51 and the upper member 61. Thereby, the attachment and detachment of the PCLS 50 with respect to the probe card 10 and the connection ring 30 becomes easy.

For example, as shown in FIG. 5, in the case where the PCLS 50 is mounted on the probe card 10 and the connection ring 30, it is previously placed on the probe card 10 before the probe inspection and before the probe card 10 is loaded on the prober. Install the lower part 51. Further, the upper member 61 is attached to the connecting ring 30 in advance before the connecting ring 30 is loaded on the probe. Then, after the probe card 10 and the connecting ring 30 are loaded on the prober, the lower member 51 and the upper member 61 are fixed and fixed by using the screw 71.

Further, when the PCLS 50 is removed, the screw 71 is removed from the screw hole before the probe card 10 and the connecting ring 30 are unloaded from the probe, and the connection state between the lower member 51 and the upper member 61 is released. Next, the probe card 10 and the connecting ring 30 are unloaded from the probe. Thereafter, the lower part 51 is detached from the probe card 10. Further, the upper member 61 is detached from the connecting ring 30.

As described above, the PCLS 50 is formed by the lower side member 51, the upper member 61, and the screw 71, and the PCLS 50 can be easily attached and detached to the probe card 10 and the connecting ring 30. Further, the timing at which the connecting ring 30 is fixed to the casing 3 of the probe device can be any point as long as it is before the probe inspection.

(3) Among the components constituting the PCLS 50, the plurality of pillars 53 which are closest to the probe card 10 and which are most susceptible to heat during the high temperature inspection include a material having a coefficient of linear expansion smaller than that of the upper side member 61. For example, each of the pillars 53 includes a super Invar alloy having a very small coefficient of linear expansion. Thereby, it is possible to prevent the pillars 53 from being thermally expanded when the high temperature inspection is performed, and the probe card 10 is pressed to the lower side. It is possible to prevent the probe card 10 from being "warped and deformed by the lower side protrusion" due to thermal expansion of the respective pillars 53.

(verification and results)

The inventors verified the effect of suppressing the fluctuation of the position of the tip end of the probe using PCLS. The result of this verification will be explained.

Fig. 6 is a graph showing the results obtained by the inventors of the present invention for verifying the effect of PCLS. The horizontal axis of Fig. 6 represents time. Further, the vertical axis indicates the displacement amount "μm" of the position of the tip end of the probe. The positive (+) of the vertical axis represents the amount of displacement to the + side (i.e., the upper side) in the Z-axis direction, and the negative (-) represents the amount of displacement to the side of the Z-axis direction (i.e., the lower side). In this verification, in the probe inspection apparatus 100 shown in FIG. 1, a wafer is placed on the stage 1 of the prober, and in this state, the stage 1 is heated to 150 ° C to perform high temperature inspection. Then, the front end position of the probe 13 in the non-contact state was measured every 5 minutes, and the displacement amount in the Z-axis direction with respect to the front end position (initial value: 0) before the high temperature inspection was recorded. The measurement and recording system continuously performs high temperature inspection on four wafers. As shown in FIG. 6, it was confirmed that the variation of the position of the front end of the probe 13 was controlled to ±5 μm in each of the four wafers.

Furthermore, the average value of the displacement amount of the first sheet is lower than the average value of the displacement amount of the second sheet and thereafter. For this reason, the inventors of the present invention thought that the temperature of each of the devices constituting the probe inspection device 100 such as the probe card 10, the card holder 20, the connection ring 30, and the PCLS 50 was not stabilized immediately after the high temperature inspection of the first sheet was started. .

(variation)

In the first embodiment, the case where the planar shape of each of the lower support portion 52 and the upper support portion 62 is a cross (cross) shape has been described. However, in the first embodiment The shape of the lower support portion 52 and the upper support portion 62 is not limited thereto. For example, as shown in FIG. 7, the lower support portion 52 may have a cross shape, and the upper support portion 62 may have a rectangular shape that extends long in one direction. Further, as shown in FIG. 8, the lower support portion 52 may have a cross shape, and the upper support portion 62 may have a circular shape. In such a case, the same effects as the effects (1) to (3) of the first embodiment described above are exerted.

"Second Embodiment"

(constitution)

FIG. 9 is a view showing a configuration example of the probe card 200 according to the second embodiment of the present invention. Fig. 9(a) is a plan view, Fig. 9(b) is a side view, and Fig. 9(c) is a XX' cross-sectional view.

As shown in FIGS. 9(a) to 9(c), the probe card 200 includes a probe card substrate 110, a support member 130 disposed at a distance from the upper surface 111 side of the probe card substrate 110, and a probe member 130. A plurality of pillars 150 between the card substrate 110 and the support member 130.

The probe card substrate 110 is attached to a probe device (not shown), and includes, for example, epoxy glass. The shape (i.e., planar shape) of the probe card substrate 110 in a plan view is, for example, a perfect circle. The size of the probe card substrate 110 is, for example, 100 to 300 mm in diameter and 3.2 to 4.8 mm in thickness.

Further, on the upper surface 111 of the probe card substrate 110, for example, a circuit or an electronic component (not shown) is mounted. Further, a plurality of probes 120 connected to the above-described circuit or electronic component are mounted on the probe card substrate 110. The probe 120 is fixed by, for example, a needle holder 123 disposed on the lower surface 112 side of the probe card substrate 110, and its front end 121 is located on the lower surface 112 side of the probe card substrate 110. The number of the probes 120 and the arrangement interval correspond to, for example, the number and arrangement interval of the electrode pads of the article to be inspected (that is, the IC wafer formed on the wafer).

Further, on the probe card substrate 110, a plurality of screw holes 113 penetrating between the upper surface 111 and the lower surface 112 are provided in order to fix the lower ends of the plurality of pillars 150, respectively.

The support member 130 is a member that supports the probe card substrate 110, and includes, for example, a stainless steel material. The support member 130 is used, for example, in a state of being fixed to a probe device (not shown). As shown in Figure 9(a) It is to be noted that the planar shape of the support member 130 is, for example, a cross (cross) shape. Regarding the size of the support member 130, for example, the length from one end to the other end of the cross is 100 to 300 mm, and the thickness is 5 to 20 mm. Further, in the support member 130, in order to fix the upper ends of the plurality of pillars 150, a plurality of screw holes 133 penetrating between the upper surface 131 and the lower surface 132 of the support member 130 are provided.

The plurality of pillars 150 are connected to the probe card substrate 110 and the support member 130, and have a length L of, for example, 10 to 20 mm. This length L corresponds to the distance between the probe card substrate 110 and the support member 130. Further, the plurality of pillars 150 include, for example, a plurality of first pillars 151 and a plurality of second pillars 152.

The plurality of first pillars 151 are arranged at equal intervals on the first circumference 171. Here, the first circumference 171 is, for example, a circumference of a perfect circle, and has an imaginary circumference having a center of a circle at a center portion of the probe card substrate 110. Further, the plurality of second pillars 152 are arranged at equal intervals on the second circumference 172. Here, the second circumference 172 is, for example, a circumference of a perfect circle, and is an imaginary circle having a concentric circle with respect to the first circumference 171 (that is, a center of a shared circle) and having a larger diameter than the first circumference 171. In the case where the four first pillars 151 are arranged at equal intervals on the first circumference 171, the four second pillars 152 are arranged at equal intervals on the first circumference 171, and the first pillars 151 and the first pillars are exemplified in FIG. The two pillars 152 are lined up in the diameter direction of the circle (for example, the X-axis direction and the Y-axis direction).

Further, in the first pillar 151 and the second pillar 152, for example, screw holes penetrating from the lower end to the upper end are provided. Further, as shown in FIG. 9(c), for example, the first stay 151 is fixed from the probe card substrate 110 side by screws 161, and is fixed from the support member 130 side by screws 166. In the intermediate portion of the longitudinal direction of the first pillar 151 (for example, the Z-axis direction), a space is secured between the screw 161 and the screw 166. Similarly, the second stay 152 is fixed from the probe card substrate 110 side by the screw 162, and is fixed from the support member 130 side by the screw 167. A space is secured between the screw 162 and the screw 167 in the intermediate portion of the second post 152 in the longitudinal direction.

Further, in the second embodiment of the present invention, the thermal expansion coefficient (thermal expansion) of the second pillar 152 The coefficient) is larger than the thermal expansion coefficient of the first pillar 151. In other words, when the coefficient of thermal expansion of the first pillar 151 is β1 and the coefficient of thermal expansion of the second pillar 152 is β2, the first pillar 151 and the second pillar are selected so as to satisfy the following formula (1). 152 material.

22>β1...(1)

For example, the material of the first pillar 151 is SUS430 (β = 10.4 × 10 ^-6 ° C, 0 to 100 ° C) in the JIS standard, and the material of the second pillar 152 is SUS 410 in the JIS standard (β = 11.0 × 10 ^-6 ° C, 0~100°C). The term "0 to 100 ° C" means the value of the coefficient of thermal expansion in the range of 0 to 100 ° C. Alternatively, the first pillar 151 may be a super Invar alloy having a small coefficient of thermal expansion (β = ± 0.1 × 10 ^-6 ° C, 0 to 100 ° C), and the second pillar 152 may be SUS430 or SUS 410 in JIS standard. In the second embodiment of the present invention, each material of the first pillar 151 and the second pillar 152 can be arbitrarily selected in accordance with the condition of the formula (1).

Moreover, when the thermal expansion coefficient of the probe card substrate 110 is βb, for example, the following formula (2) holds between β1, β2, and βb.

Bb>β2>β1...(2)

Further, in the second embodiment of the present invention, the screws 161 and 166 for fixing the first support 51 preferably include the same material as the first support 151. Since the first column 151 and the screws 161 and 166 have the same thermal expansion coefficient, the first column 151 and the screws 161 and 166 can be regarded as an integral body, and the expansion and contraction of the first column 151 in the heating test can be easily controlled. The amount of volume change (the amount of change in length L). Further, during expansion and contraction, it is possible to prevent the stress caused by the difference in thermal expansion coefficient from accumulating between the first stay 151 and the screws 161 and 166. For the same reason, the screws 162 and 167 that fix the second post 152 preferably also contain the same material as the second post 152.

(action. role)

Fig. 10 is a conceptual diagram showing forces F1 and F2 applied to the probe card substrate 110 at the time of high temperature inspection. When the probe card 200 is used for high temperature inspection, as shown in FIG. 19, the heater built in the stage is energized and heated while the wafer is fixed on the stage. station. Thereby, the temperature of the wafer rises to, for example, 150 ° C to 200 ° C by the spacer. Further, the probe card 200 is placed above the wafer (that is, above the stage), and after the temperature of the wafer is stabilized, the probe 120 is brought into contact with the electrode pad of the IC wafer formed on the wafer, and the IC chip is measured. Electrical characteristics.

In this process, the radiant heat from the wafer or the conduction heat from the probe is transferred to the lower surface 112 of the probe card substrate 110 disposed above the wafer. Thereby, the probe card substrate 110 rises in temperature from the lower surface 112 side, and a temperature difference (thermal gradient) is generated between the lower surface 112 and the upper surface 111. As shown in FIG. 10, the force F1 in the direction in which "the warp deformation of the lower side protrusion" is generated is applied to the probe card substrate 110 due to the temperature difference.

On the other hand, the radiation heat or conduction heat is transmitted to the plurality of pillars 150 disposed on the upper surface 111 side of the probe card substrate 110 via the probe card substrate 110. Further, the temperature of the plurality of pillars 150 rises due to heat transfer from the probe card substrate 110. Here, as shown in the formula (1), the thermal expansion coefficient β2 of the second pillar 152 is larger than the thermal expansion coefficient β1 of the first pillar 151. Therefore, the second pillar 152 expands more than the first pillar 151, and the second pillar 152 presses the probe card substrate 110 downward (that is, the wafer side) more strongly than the first pillar 151. As a result, as shown in FIG. 10, the force F2 in the direction in which "the warp deformation of the upper side protrusion" is generated is applied to the probe card substrate 110. The force F2 generated by the "warping deformation of the upper side protrusion" counteracts the force F1 which is intended to cause "warping deformation of the lower side protrusion". Thereby, the force F1 can be reduced, so that the "warping deformation of the lower side protrusion" caused by the temperature difference between the upper and lower surfaces of the probe card substrate 110 can be reduced.

Further, during the high temperature inspection, part or all of a plurality of IC chips formed on the wafer are inspected while the probe card 200 is relatively moved relative to the wafer. In this process, as shown in FIG. 18, there is a case where the IC chip located on the outer peripheral portion of the wafer is inspected or the probe card 200 is moved to the cleaning region outside the stage. In this case, at least a portion of the probe card 200 exits above the stage. When the probe card 200 is separated from the upper side of the stage, the amount of radiation heat received by the lower surface 112 of the probe card substrate 110 becomes small, so that the temperature difference between the upper and lower surfaces becomes small. Therefore, the force F1 generated by the "warping deformation of the lower side protrusion" is reduced, thereby exploring The warpage deformation of the card substrate 110 tends to converge. Moreover, since the amount of heat transfer from the probe card substrate 110 to each of the pillars 150 is also small, each of the pillars 150 contracts according to the coefficient of thermal expansion. Thereby, the force F2 which is generated by the "warping deformation of the upper side protrusion" is also reduced.

In the second embodiment, the lower surface 112 of the probe card substrate 110 corresponds to "one side" of the present invention, and the upper surface 111 corresponds to the "other side" of the present invention.

(Effect of the second embodiment)

The probe card of the present invention exerts the following effects.

(1) The probe card 200 has the first pillar 151 between the probe card substrate 110 and the support member 130, and is disposed at a position farther from the center portion of the probe card substrate 110 than the first pillar 151 (for example, the outer peripheral portion) The second pillar 152. Here, the thermal expansion coefficient β2 of the second pillar 152 is larger than the thermal expansion coefficient β1 of the first pillar 151.

Thereby, when the probe card 200 is used for the high temperature inspection, the force F1 at which the "warp deformation of the lower side protrusion" is generated is applied to the probe card substrate 110. Further, due to the difference in thermal expansion coefficient between the first pillar 151 and the second pillar 152, a force against the warpage deformation is applied to the probe card substrate 110. By the two forces cancel each other, the warpage deformation caused by the temperature difference between the upper and lower surfaces of the probe card substrate 110 can be alleviated.

(2) Further, a plurality of the first pillars 151 and the second pillars 152 are provided, and the first pillars 151 are arranged at equal intervals on the first circumference 171, and the second pillars 152 are equally spaced on the second circumference 172. Ground configuration. With this configuration, the center portion of the probe card substrate 110 can be surrounded concentrically, and the force for pressing the probe card substrate 110 downward (that is, the pressing force) can be set so that the center of the circle becomes larger toward the outer circumference. Distribution. The pressing force set in this manner is a force F2 for causing "warping deformation of the upper side protrusion" on the probe card substrate 110, and the force F2 acts on the "warping deformation of the lower side protrusion". The force F1 is in the opposite direction. Therefore, warpage deformation due to the temperature difference between the upper and lower surfaces of the probe card substrate 110 can be more effectively alleviated.

(3) Since the warpage deformation of the probe card substrate 110 can be alleviated during the high temperature inspection, it can be shrunk The amount of displacement of the front end position of the small probe 120. Thereby, the pressing of the electrode pads of the probe 120 can be made uniform. Further, since the displacement amount at the position of the front end of the probe 120 can be made small and the pressing pressure can be made uniform, the temperature of the high temperature inspection can be further increased (for example, a temperature exceeding 200 ° C).

(variation)

(1) Further, the case where the plurality of pillars 150 include, for example, a plurality of first pillars 151 and a plurality of second pillars 152 has been described. However, in the second embodiment, the plurality of pillars 150 are not limited to two types of the first pillar 151 and the second pillar 152. For example, as shown in FIG. 11, the plurality of pillars 150 may include the third pillars 153 in addition to the first pillars 151 and the second pillars 152. In this example, the third pillar 153 is disposed on the center portion of the probe card substrate 110. The center portion of the probe card substrate 110 is a so-called dead space in which it is difficult to arrange electronic components, but the third pillar 153 is disposed here.

Moreover, the coefficient of thermal expansion of the third pillar 153 is smaller than the coefficient of thermal expansion of the first pillar 151. In other words, when the coefficient of thermal expansion of the third pillar 153 is β3, the material of the third pillar 153 is selected so as to satisfy the following formula (3).

22>β1>β3...(3)

For example, when the material of the first pillar 151 is SUS430 in the JIS standard and the material of the second pillar 152 is SUS410 in the JIS standard, the super-invar alloy which is extremely small compared to the thermal expansion coefficient can be selected as the third. Pillar 153.

According to this configuration, the number of the pillars 150 can be increased in the probe card substrate 110 without sacrificing the arrangement space of the electronic components. Further, the center portion of the probe card substrate 110 is a portion that is easy to accumulate heat, but the third pillar 153 functions as a heat transfer path, and can efficiently be efficiently moved from the center portion of the probe card substrate 110 toward the support member 130 side. Cooling.

In the same manner as the first pillars 151 and the second pillars 152, the screws 163 that instruct the third pillars 153 from the support member 130 side and the screws (not shown) that fix the third pillars 153 from the probe card substrate 110 side are also compared. It is preferable to include the same material as the third pillar 153.

(2) Further, in the second embodiment, the first pillar 151 shown in Fig. 11 may be omitted. In other words, as shown in FIGS. 12(a) and 12(b), the third pillar 153 may be disposed at the center of the probe card substrate 110, and the second pillar 152 may be disposed on the outer peripheral portion between the center portion and the outer peripheral portion. The pillar 150 is not disposed in the middle portion.

With such a configuration, for example, it is possible to easily secure a space on the upper surface 111 side of the intermediate portion of the probe card substrate 110. Further, various electronic components 155 such as coils, capacitors, or packaged IC components can be disposed in the space to be secured. Thereby, the mounting density of the electronic components in the probe card substrate 110 can be increased. Further, in the variation shown in FIG. 12, the third pillar 153 corresponds to the "first pillar" of the present invention.

(3) In the second embodiment, the case where the relationship of the formula (2) is established, that is, the thermal expansion coefficient βb of the probe card substrate 110 is larger than the thermal expansion coefficient β2 of the second pillar 152 has been described. However, in the second embodiment, the magnitude relationship of the coefficient of thermal expansion is not limited to this. That is, as shown by the following formula (2)', the thermal expansion coefficient β2 of the second pillar 152 may be larger than the thermal expansion coefficient βb of the probe card substrate 110.

22>βb>β1...(2)'

For example, the second pillar 152 is made of a resin material, or the second pillar 152 and the screws 162 and 167 are made of the same resin material, whereby the formula (2) can be satisfied. When the equation (2) is satisfied, the difference between the thermal expansion coefficients of the first pillar 151 and the second pillar 152 is larger, and the second pillar 152 can further press the outer peripheral portion of the probe card substrate 110 downward. Therefore, the "warping deformation of the lower side protrusion" generated in the probe card 200 can be further reduced.

"Third Embodiment"

In the second embodiment described above, the case where the planar shape of the support member is a cross shape has been described. However, in the embodiment of the present invention, the planar shape of the support member is not limited thereto. The planar shape of the support member may also be a polygon such as a quadrangle or a hexagon, or a perfect circle. Further, the support member may be a plate having a thickness smaller than the vertical and horizontal dimensions.

Fig. 13 is a plan view showing a configuration example of a probe card 300 according to a third embodiment of the present invention. As shown in FIG. 13 , the probe card 300 includes a probe card substrate 110 , a support plate 230 disposed at a distance from the upper surface 111 side of the probe card substrate 110 , and a probe card substrate 110 and a support member. A plurality of struts 150 between 130. The support plate 230 is a member that supports the probe card 300, for example, including stainless steel. The support plate 230 is used, for example, in a state of being fixed to a probe device (not shown).

Regarding the support plate 230, as shown in FIG. 13, the planar shape of the support portion 230 is, for example, a perfect circle. Similarly to the support member 130 shown in FIG. 9, in order to also fix the upper end of the strut 150 on the support plate 230, a plurality of screw holes penetrating between the upper surface 111 and the lower surface 112 of the support plate 230 are provided.

In the probe card 300, the first pillar 151 and the second pillar 152 have the same configuration as that of the second embodiment and have the same functions. Thereby, the third embodiment exhibits the same effects as the effects (1) to (3) of the second embodiment. Further, in the third embodiment, the modifications (1) to (3) described in the second embodiment can be applied.

For example, as shown in FIG. 14, the plurality of pillars 150 may include the third pillars 153 in addition to the first pillars 151 and the second pillars 152. The third pillar 153 is disposed, for example, on a central portion of the probe card substrate 110. Further, the materials constituting the first pillar 151, the second pillar 152, and the third pillar 153 are selected so as to satisfy the above formula (3). According to this configuration, the same effects as the modification (1) of the second embodiment are exhibited.

Further, the first pillar 151 may be omitted in FIG. In other words, as shown in FIG. 15, the third pillar 153 may be disposed at the center of the probe card substrate 110, and the second pillar 152 may be disposed on the outer peripheral portion, and the first portion between the center portion and the outer peripheral portion may not be disposed first. Pillar 150. According to this configuration, the same effects as the modification (2) of the second embodiment are exhibited.

Further, as shown in FIG. 16, the number of the second pillars 152 may be larger than that of the first pillars 151. According to this configuration, the arrangement interval of the second pillars 152 on the second circumference 172 can be made close to the arrangement interval of the first pillars 151 on the first circumference 171. Thereby, the first circumference 171 can be prevented In comparison, the distribution of the pressing force on the second circumference 172 is sparse. On the second circumference 172, the distribution of the pressing force of the second stay 152 can be made closer to uniform.

In the third embodiment, the support plate 230 corresponds to the "support member" of the present invention.

"Fourth Embodiment"

Fig. 17 is a plan view showing a configuration example of a support plate 330 according to a fourth embodiment of the present invention. The planar shape of the support plate 330 is, for example, a perfect circle, and a plurality of screw holes 133 penetrating from the upper surface 111 to the lower surface 112 are formed. A plurality of screw holes 133 are formed in the support plate 330. Specifically, a plurality of screw holes 133 are disposed at equal intervals on each of a plurality of concentric circles having a center portion of the support plate 330 as a center of a circle. Further, a screw hole 133 may be formed in the center of the circle. Here, the circumference referred to here is the same as the second and third embodiments, and refers to a virtual circumference.

In such a configuration, for example, any of the plurality of screw holes 133 can be selected from the plurality of screw holes 133, and the screw can be passed through the selected screw hole 133 to fix the column 150. The screw hole 133 of the support plate 330 can be selected according to the position of the screw hole 133 of the probe card substrate 110, and the support 150 can be fixed therein, so that the versatility of the support plate 330 can be improved.

The present invention is not limited to the embodiments described above. Design changes and the like may be added to the respective embodiments based on the knowledge of those skilled in the art, and the addition of such deformation is also included in the scope of the present invention.

1‧‧‧ stage

3‧‧‧Shell

10‧‧‧ probe card

11‧‧‧ card substrate

11a‧‧‧ upper surface

11b‧‧‧ lower surface

13‧‧‧ probe

13a‧‧‧ front end

15‧‧‧ needle holder

20‧‧‧ card holder

21‧‧‧Sheet Department

23‧‧ ‧ step

30‧‧‧Connecting ring

31‧‧ ‧spring pin

35‧‧‧ screws

50‧‧‧PCLS

51‧‧‧lower parts

52‧‧‧lower support

53‧‧‧ pillar

54‧‧‧ screws

55‧‧‧ screws

61‧‧‧Upper parts

62‧‧‧Upper support

63‧‧‧Connecting Department

64‧‧‧ screws

71‧‧‧ screws

100‧‧‧ probe inspection device

Claims (6)

A probe card fixing device, which is characterized in that the probe card is fixed to the probe device, and includes: a connecting ring for fixing to the housing of the probe device; and a card holder for And clamping a peripheral portion of the probe card between the connecting ring; and a locking device for fixing a central portion of the probe card and the connecting ring. The probe card fixing device of claim 1, wherein the locking device comprises: a first component fixed to the central portion of the probe card; a second component fixed to the connecting ring; and a third component The first part and the second part are fixed and fixed. The probe card fixing device of claim 2, wherein the first component comprises: a support member disposed at a distance from a surface of the probe card on a side in contact with the connecting ring; and a plurality of pillars And the like is between the probe card and the support member; and the plurality of pillars comprise a material having a linear expansion coefficient smaller than that of the second component. A probe inspection device comprising: the probe card fixing device according to any one of claims 1 to 3; and a probe card; and the probe card fixing device is mounted on the probe card. A probe inspection method is characterized in that, when a probe is inspected by using a probe card that is clamped to the outer peripheral portion by a card holder and a connecting ring, the probe card is preliminarily A locking device is disposed on a surface on a side where the connecting ring contacts, and the center portion of the probe card and the connecting ring are fixed by the locking device. The probe inspection method of claim 5, wherein the connection ring is previously fixed to the housing of the prober when performing the probe inspection.