JP2006108456A - Probe device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To quickly stabilize the Z displacement of a probe pin, at a high-temperature test or a low-temperature test so as to improve the throughput of a device test where a probe device is used. <P>SOLUTION: A thermostat unit 51, composed of a heater (Peltier element) and a temperature sensor, is provided to a card holder 22. When preheating (precooling) is carried out, the card holder 22 is directly and quickly heated up (cooled down) so as to stabilize the Z displacement of the card holder 22 due to thermal deformation at an early stage. A thermostat unit 52, composed of a heater (Peltier element) and a temperature sensor, is provided to a cabinet top plate 31. When preheating (pre-cooling) is carried out, the cabinet top plate 31 is heated up directly and quickly (cooled down) so as to stabilize the Z displacement of the cabinet top plate 31 due to thermal deformation at an early stage. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a probe apparatus, and more particularly, to a probe apparatus that contacts a probe pin with a temperature-adjusted inspection object (for example, a semiconductor wafer) and measures electrical characteristics of the inspection object.

  Generally, the manufacturing process of a semiconductor device includes a device test process for inspecting characteristics of a circuit formed on a semiconductor wafer before dicing. In this device testing process, in addition to a tester device for measuring electrical characteristics, a probe device for connecting a measurement terminal of the tester device to a circuit on a semiconductor wafer is used.

  In the probe apparatus, an inspection table for mounting and lowering a semiconductor wafer is accommodated in an apparatus housing. A probe card having a large number of probe pins (probes) is attached to the housing top plate via a card holder. For this reason, after the horizontal alignment (positioning) of the semiconductor wafer and the probe pin, if the inspection table is raised to a predetermined height, the probe pin can be brought into contact with the semiconductor wafer. Thus, the circuit on the semiconductor wafer and the tester device can be electrically connected.

  When such a device test is performed at a high temperature, a probe device in which a heater is attached to an inspection table is used to heat the semiconductor wafer. In such a probe apparatus, by raising the inspection table, the semiconductor wafer as a heat source approaches, and thermal deformation occurs in the probe card, the card holder supporting the probe card, and the housing top plate. As a result, a “Z displacement” in which the vertical position of the probe pin changes occurs, and the relative height of the probe pin and the semiconductor wafer changes.

  In order to perform a device test in a state where the probe pins are in good contact with the semiconductor wafer, the probe pins must be brought into contact after the Z displacement is stabilized. However, since the probe card, card holder, and housing top plate are at a temperature that is relatively close to room temperature before the device test, when the inspection table is raised during the device test, these members are subject to a sudden temperature change. A temperature gradient is generated inside. That is, there has been a problem that the Z displacement of the probe pin occurs even after the probe pin contacts, and the device test cannot be performed in a state where the probe pin is in good contact.

  For this reason, in the conventional probe apparatus, preheating (preheating) was performed (for example, patent document 1). Pre-heating means that before the device test, the probe table is temporarily raised to a height at which the probe pins do not contact the semiconductor wafer, and the probe card, card holder, housing top plate, etc. are preheated by radiant heat from the high temperature semiconductor wafer. It is a method to keep. By performing such preheating, the device test can be started by bringing the probe pin into contact with the semiconductor wafer after the Z displacement is stabilized.

  FIG. 10 is an explanatory diagram of Z displacement and preheating during a high temperature test. FIG. 10A shows the state inside the probe apparatus before preheating, and FIG. 10B shows the inside of the probe apparatus during preheating. When the inspection table 10 is raised, the card holder 22 is thermally deformed by the radiant heat. Here, the end of the card holder 22 warps upward, and a Z displacement occurs in which the position of the probe pin 21 is lowered.

  For this reason, in the conventional probe apparatus, the inspection table 10 is stopped in the state (b) in which the inspection table 10 is raised to such a height that the probe pins 21 do not contact the semiconductor wafer 1, and the Z displacement is stabilized. Preheating was performed until.

  FIG. 11 is an explanatory diagram of Z displacement and preliminary cooling during a low temperature test, and shows the inside of the probe apparatus during preliminary cooling. Also in the low temperature test, when the inspection table 10 is raised, the card holder 22 is thermally deformed by the radiation cooling, and the problem of Z displacement occurs. Here, contrary to the time of the high temperature test, the end of the card holder 22 warps downward, and a Z displacement is generated in which the position of the probe pin 21 rises. For this reason, in the case of the low temperature test, preliminary cooling is performed by once raising the inspection table 10 to such a height that the probe pins 21 do not contact the semiconductor wafer 1 in exactly the same manner as in the high temperature test.

Some conventional probe devices have a heating or cooling means provided on a probe card (for example, Patent Document 2). The probe device disclosed in Patent Document 2 preliminarily heats or cools the probe pin, thereby bringing the temperature of the probe pin before contact closer to the temperature of the semiconductor wafer and preventing contact displacement due to thermal expansion during contact. It was something to do.
JP-A-11-121558 JP 2003-215162 A

  The probe apparatus of Patent Document 1 can perform the preheating to bring the temperature of the probe card and its supporting member close to the temperature of the semiconductor wafer before the device test. However, since preheating to be heated by radiant heat takes time, there is a problem that the throughput of the device test is lowered.

  Moreover, the probe apparatus of patent document 2 cannot stabilize Z displacement by the thermal deformation of a card holder or a case top plate.

  The present invention has been made in view of the above circumstances, and aims to stabilize the Z displacement of a probe pin at the time of a high temperature test or a low temperature test at an early stage and improve the throughput of a device test using the probe apparatus. To do. In particular, an object is to quickly stabilize the Z displacement of the probe pin due to thermal expansion or thermal contraction of the probe card support portion supporting the probe card.

  A probe apparatus according to a first aspect of the present invention includes an inspection table on which an inspection object is placed and driven to be moved up and down, a probe card disposed above the inspection table and having a number of probe pins, and the probe card being attached and detached. A probe card support that supports the probe card, a first temperature control element that is provided on the inspection table and that heats or cools the inspection object, and a probe card support that is provided on the probe card support and heats the probe card support. Alternatively, the second temperature control element to be cooled and the first and second temperature control elements are controlled, and the test table and the probe card support are heated before the probe pin contacts the test object. Or it comprises a temperature control device for cooling.

  With such a configuration, when a high temperature test or a low temperature test is performed by heating or cooling the inspection object using the first temperature control element, the second temperature is set before the probe pin is brought into contact with the inspection object. The probe card support can be rapidly heated or cooled using the adjusting element, and the Z displacement of the probe pin can be stabilized at an early stage. For this reason, when the test is started by bringing the probe pin into contact with the inspection object after the Z displacement is stabilized, the throughput of the test process can be improved. The temperature control element refers to a heating element such as a heater or a cooling element such as a Peltier element.

  A probe device according to a second aspect of the present invention includes a temperature sensor that is provided in the probe card support portion and measures the temperature of the probe card support portion, and the temperature control device is based on the measured temperature of the temperature sensor, The second temperature control element is configured to be controlled.

  With such a configuration, the second temperature control element can be controlled based on the temperature of the probe card support part, and the probe card support part can be rapidly heated or cooled and maintained at a desired temperature. Can do.

  In the probe device according to a third aspect of the present invention, the probe card support portion is attached to the case top plate having an inspection opening and the case top plate, and the peripheral end portion of the probe card is detachably supported. And a card holder for disposing the probe card in the inspection opening, and the second temperature control element is provided in the card holder. With such a configuration, the card holder can be heated or cooled before the test is started, and the Z displacement due to the thermal deformation of the card holder can be stabilized at an early stage.

  A probe device according to a fourth aspect of the present invention includes a third temperature control element that is provided on the casing top plate and heats or cools the casing top plate, and the temperature control device includes the third temperature control element. The device is controlled so that the casing top plate is heated or cooled before the probe pin contacts the inspection object. With such a configuration, the casing top plate can be heated or cooled before the test is started, and the Z displacement resulting from the thermal deformation of the casing top plate can be stabilized at an early stage.

In the probe device according to a fifth aspect of the present invention, the probe card support portion is attached to the case top plate having an inspection opening and the case top plate, and the peripheral end portion of the probe card is detachably supported. And a card holder for disposing the probe card in the inspection opening,
The second temperature control element and the temperature sensor are provided in the card holder. With such a configuration, the second temperature control element can be controlled based on the temperature of the card holder, and the card holder can be rapidly heated or cooled and maintained at a desired temperature.

  In the probe device according to a sixth aspect of the present invention, the probe card has a ring shape having a probe opening in which the probe pin is disposed, and the second temperature control element is evenly arranged in the circumferential direction of the probe card. Two temperature sensors are arranged at different positions in the radial direction. With such a configuration, the card holder can be heated or cooled evenly, the temperature distribution on the card holder can be measured, and appropriate temperature control can be performed.

  ADVANTAGE OF THE INVENTION According to this invention, the Z displacement of the probe pin at the time of a high temperature test or a low temperature test can be stabilized at an early stage, and the throughput of the device test using a probe apparatus can be improved. In particular, the Z displacement of the probe pin due to thermal expansion or thermal contraction of the probe card support portion supporting the probe card can be stabilized at an early stage.

Embodiment 1 FIG.
FIGS. 1A and 1B are external views showing an example of a probe device according to the present invention. The probe device includes a housing body 30, a housing top plate 31, and a loader box 32. The opening 30h provided on the upper surface of the housing body 30 is covered with the housing top plate 31, and when performing maintenance or the like, the housing top plate 31 is removed and the opening 30h is opened. . The loader box 32 is a carry-in port for a semiconductor wafer which is an inspection object, and a semiconductor wafer stored in a wafer cassette is set therein.

  FIG. 2 is a diagram showing an example of the internal configuration of the probe device according to Embodiment 1 of the present invention, and is a cross-sectional view taken along the line AA in FIG. The inspection table 10 includes a wafer chuck that holds the semiconductor wafer 1 by suction, and the semiconductor wafer 1 transferred from the loader box 32 is placed on the inspection table 10. The inspection table 10 is connected to a drive device 12 via a drive shaft 11 and can move in a horizontal direction (XY direction) and a vertical direction (Z direction). The detection device 13 is an alignment camera or sensor, is attached to the drive shaft 11, and moves together with the inspection table 10. The drive device 12 drives the inspection table 10 based on the output of the detection device 13.

  An inspection table 10 is housed in the housing body 30, and a probe card 20 having a large number of probe pins 21 is attached to the housing top plate 31. The probe card 20 is arranged with the probe pins 21 facing the mounting surface of the inspection table 10. The probe card 21 is brought into contact with the semiconductor wafer 1 by raising the inspection table 10 to a predetermined height. be able to.

  The housing top plate 31 has an inspection opening 31h, and the card holder 22 is attached to the inspection opening 31h, and the probe card 20 can be attached to and detached from the housing top plate 31 by the card holder 22. Is attached. The probe card 20 has a generally disk shape, and a probe pin 21 is provided near the center thereof. The card holder 22 has a substantially ring shape having a probe opening 22 h in which the probe pin 21 is disposed, and the outer peripheral end of the card holder 22 is connected to the inspection opening on the housing top plate 31 by the locking screw 23. The inner peripheral edge of the card holder 22 supports the outer peripheral edge of the probe card 20.

  The interface board 24 is disposed on the probe card 20 and electrically connects the probe card 20 and the test head 40. The interface board 24 is provided with a large number of spring pins 26. The spring pins 26 are brought into contact with electrodes on the probe card 20 that are electrically connected to the probe pins 21, and the probe pins 21 are electrically connected to the test head 40. Connected to. The test head 40 is a part of a tester device (not shown).

  The temperature adjustment unit 50 is attached to the inspection table 10 and adjusts the temperature of the semiconductor wafer 1 placed on the inspection table 10. The temperature control unit 51 is attached to the lower surface side of the card holder 22 and adjusts the temperature of the card holder 22. The temperature adjustment unit 52 is attached to the lower surface side of the housing top plate 31 and adjusts the temperature of the housing top plate 31. That is, in addition to the inspection table 10, the temperature adjustment unit is provided not only for the semiconductor wafer 1 but also for the card holder 22 and the case top plate 31 by providing temperature control units for the card holder 22 and the case top plate 31. be able to. In order to effectively adjust the temperature, it is desirable that the temperature adjustment units 50 to 52 be incorporated in the inspection table 10, the card holder 22, and the housing top plate 31, respectively. An example of the case is shown.

  FIG. 3 is a diagram showing a configuration example of a temperature control system employed by the probe device of FIG. The temperature control units 50 to 52, the temperature control device 53, and the temperature control data storage unit 54 in the figure are all provided in the probe device.

  The temperature control unit 50 includes a heater 50 </ b> H for heating the semiconductor wafer 1 and a temperature sensor 50 </ b> S for measuring the temperature of the semiconductor wafer 1. Similarly, the temperature adjustment unit 51 includes a heater 51H for heating the card holder 22 and a temperature sensor 51S for measuring the temperature of the card holder 22. The temperature adjustment unit 52 includes a heater 52H for heating the casing top plate 31 and a temperature sensor 52S for measuring the temperature of the casing top plate 31. The heaters 50H to 52H are an example of a heating element, and generate heat according to supplied power.

  FIG. 4 is a view showing an arrangement example of the heaters 51H and 52H and the temperature sensors 51S and 52S, and is a view as seen from an arrow B in FIG. is there. It is desirable that the heaters 51H and 52H and the temperature sensors 51S and 52S are equally arranged with respect to the semiconductor wafer 1 during device measurement. Further, it is desirable that the heaters 51H and 52H are arranged at positions close to the semiconductor wafer 1. In other words, the heaters 51H are desirably arranged evenly on the ring-shaped card holder 22, and are desirably arranged closer to the center. Here, an example is shown in which the heater 51H is provided on the inner end of the card holder 22 over substantially the entire circumference. The heaters 52H are desirably arranged evenly along the inspection opening 31h, and are desirably arranged closer to the center. Here, an example is shown in which the heater 52H is provided on the peripheral edge of the inspection opening 31h over substantially the entire circumference.

The temperature adjustment data storage unit 54 stores temperature adjustment data 54D used by the temperature control device 53 when the temperature adjustment units 50 to 52 are controlled. The temperature control data 54D is composed of control target values to be controlled, that is, target temperatures T ₁ , T ₂₂ , T _{31 of} the semiconductor wafer 1, the card holder 22, and the housing top plate 31. For example, measured in advance the temperature of a temperature sensor 50S~52S during device testing, and stores temperature control data 54D to these target temperatures _{T 1, T 22, T 31} .

The temperature control data 54D is associated with the probe card 20 and the card holder 22, and the temperature control data storage unit 54 stores a plurality of temperature control data 54D. The probe card 20 and the card holder 22 are exchangeable, and the target temperatures of the temperature control units 51 and 52 are different depending on the material, structure, shape, mounting position, and the like. For this reason, different temperature control data 54D is used for each combination of the probe card 20 and the card holder 22. The temperature conditions during device testing, i.e., when the target temperature _{T 1} of the temperature control unit 50 are different, also different target temperature _{T 22, T 31} of temperature control unit 51, require different temperature adjustment data 54D Needless to say.

The temperature control device 53 controls the power supplied to the heaters 50H to 52H based on the temperatures measured by the temperature sensors 50S to 52S and the temperature adjustment data 54D read from the temperature adjustment data storage unit 54. The temperatures of the semiconductor wafer 1, the card holder 22, and the housing top plate 31 are controlled. For example, calculated and measured temperature at the temperature sensor 50S～52S, each target temperature read from the temperature adjustment data storage unit _{54 T 1, T 22, T} 31 differences between each, based on the temperature difference, the heater 50H~ The energization to 52H is turned on or off, or the applied voltage is controlled.

  In the probe apparatus according to the present embodiment, preheating for a high temperature test is performed using such a temperature control system. That is, temperature control using the temperature control units 50 to 52 is started before the device test is started. This preheating procedure will be further described.

  First, the temperature control device 53 reads any temperature adjustment data 54 </ b> D in the temperature adjustment data storage unit 54. The selection of the temperature control data 54D may be performed based on a user's operation input, or the probe card 20 or the card holder 22 attached to the probe device may be automatically determined and based on the determination result. Good.

Next, the semiconductor wafer 1, the temperature of the card holder 22 and the housing top plate 31, so that the target temperature _{T 1,} T _{22, T 31,} shown in the temperature adjustment data 54D, controls the heater 50H~52H . At this time, each temperature control target is directly heated by the heaters 50H to 52H, and is controlled independently for each temperature control target based on the outputs of the temperature sensors 50S to 52S. For this reason, the card holder 22 and the housing top plate 31 can be rapidly heated until the target temperatures T ₂₂ and T ₃₁ are reached.

Thereafter, when the Z displacement of the probe pin 21 is stabilized, the device test is started. For example, when each temperature adjustment target reaches the target temperatures T ₁ , T ₂₂ , T ₃₁ , or when a predetermined time has passed since this arrival, the inspection table 10 is raised and the probe pin 21 is moved to the semiconductor wafer. 1 to start the device test.

  After the probe pin 21 is contacted, the heaters 51H and 52H are not energized. That is, the temperature adjustment of the semiconductor wafer 1 by the temperature control unit 50 is continued during the device test, but the temperature adjustment by the temperature control units 51 and 52 is not performed during the device test. However, the Z displacement after the contact can also be suppressed by continuing the temperature adjustment by the temperature control units 51 and 52 even after the probe pin 21 is contacted.

  According to the present embodiment, heaters 51H and 52H are provided on the card holder 22 and the case top plate 31 that support the probe card 20, and the card holder 22 and the case top plate 31 are directly connected during preheating. Heating. For this reason, compared with the conventional preheating using the radiant heat from the semiconductor wafer 1, these members can be heated rapidly, the temperature gradient inside the members can be eliminated quickly, and the Z displacement can be stabilized quickly. it can.

  In addition, according to the present embodiment, the temperature sensors 51S and 52S are provided on the card holder 22 and the case top plate 31 that support the probe card 20, and temperature control is performed based on the measured temperatures during preheating. Is going. That is, temperature control is performed independently for the semiconductor wafer 1, the card holder 22, and the housing top plate 31. For this reason, compared with the conventional preheating using the radiant heat from the semiconductor wafer 1, these members can be heated rapidly, the temperature gradient inside the members can be eliminated quickly, and the Z displacement can be stabilized quickly. it can.

  Further, according to the present embodiment, the temperature adjustment data storage unit 54 stores a plurality of temperature adjustment data 54D, and uses the temperature adjustment data 54D corresponding to the exchangeable probe card 20 and card holder 22 combination. The temperature control of the card holder 22 and the case top plate 31 is performed. For this reason, these members can be heated rapidly, an internal temperature gradient can be eliminated quickly, and Z displacement can be stabilized quickly.

  Furthermore, according to the present embodiment, the temperature of the card holder 22 and the case top 31 can be made the same as the temperature during the device test before the device test. For this reason, Z displacement when the probe pin 21 is brought into contact with the semiconductor wafer 1 can be effectively suppressed.

  In general, the Z displacement is caused by thermal deformation of the probe card 20 and the probe card support portions such as the card holder 22 and the case top plate 31 that support the probe card 20. For example, when these members have a multilayer structure made of different materials, warping occurs due to a difference in thermal expansion coefficient of each layer due to temperature change.

  When such thermal deformation occurs in the probe card 20, the height of the probe pin 21 varies. However, since the probe pins 21 are made of a leaf spring-shaped metal material disposed obliquely with respect to the main surface of the semiconductor wafer 1, the contact positions on the semiconductor wafer 1 are shifted when the height of the probe pins 21 varies. End up. Further, when an excessive stroke is applied to the probe pin 21 due to being too close to the semiconductor wafer 1, the plastic pin is deformed plastically beyond the elastic limit. For this reason, it is desirable to employ a probe card 20 having a structure that hardly causes thermal deformation.

  When such a probe card 20 that is difficult to be thermally deformed is employed, the Z displacement of the probe pin 21 is caused by the thermal deformation of the probe card support portion. In particular, the thermal deformation of the card holder 22 and the case top plate 31 that are easily affected by radiant heat from the semiconductor wafer 1 is a major cause of Z displacement. For this reason, as described in detail in the present embodiment, if the temperature of the card holder 22 and the housing top plate 31 is stabilized at an early stage and the internal temperature gradient is eliminated, the Z displacement of the probe pin 21 can be accelerated. Can be stabilized.

Embodiment 2. FIG.
In the first embodiment, an example of a probe device for performing a high temperature test has been described. In this embodiment, a probe device for performing a low temperature test will be described. The schematic configuration of the probe apparatus according to the present embodiment is the same as in the case of FIGS. 1 and 2 (Embodiment 1).

  FIG. 5 is a diagram showing another configuration example of the temperature control system employed by the probe device of FIG. Compared to the case of FIG. 3 (Embodiment 1), only the Peltier elements 50P to 52P are used instead of the heaters 50H to 52H. That is, the temperature control unit 50 includes a Peltier element 50P for cooling the semiconductor wafer 1 and a temperature sensor 50S. Similarly, the temperature control unit 51 includes a Peltier element 51P for cooling the card holder 22 and a temperature sensor 51S. The temperature adjustment unit 52 includes a Peltier element 52P for cooling the housing top plate 31 and a temperature sensor 52S. Note that the Peltier elements 50P to 52P are examples of cooling elements, and can perform cooling according to the supplied power using the Peltier effect.

  The configurations and operations of the temperature control device 53 and the temperature control data storage unit 54 are exactly the same as those in the first embodiment, and the probe device according to the present embodiment uses such a temperature control system to perform a low temperature test. Precooling is performed for. Note that the preliminary cooling procedure is the same as that in the case of the preliminary heating, and thus the description thereof is omitted.

  According to the present embodiment, the Peltier elements 51P and 52P are provided on the card holder 22 and the case top plate 31 that support the probe card 20, and the card holder 22 and the case top plate 31 are directly connected during preliminary cooling. It has cooled down. For this reason, compared with the case where radiation cooling from the semiconductor wafer 1 is used, these members can be cooled rapidly, the temperature gradient inside the members can be eliminated quickly, and the Z displacement can be stabilized quickly.

  Further, according to the present embodiment, the temperature sensors 51S and 52S are provided on the card holder 22 and the case top plate 31 that support the probe card 20, and temperature control is performed based on the respective measured temperatures during preliminary cooling. Is going. For this reason, compared with the case where radiation cooling from the semiconductor wafer 1 is used, these members can be cooled rapidly, the temperature gradient inside the members can be eliminated quickly, and the Z displacement can be stabilized quickly.

  Further, according to the present embodiment, the temperature adjustment data storage unit 54 stores a plurality of temperature adjustment data 54D, and uses the temperature adjustment data 54D corresponding to the exchangeable probe card 20 and card holder 22 combination. The temperature control of the card holder 22 and the case top plate 31 is performed. For this reason, these members can be cooled rapidly, the internal temperature gradient can be eliminated quickly, and the Z displacement can be stabilized quickly.

Embodiment 3 FIG.
In the present embodiment, another configuration example of the card holder 22 provided with the temperature control unit 51 will be described in detail.

  FIG. 6 is a cross-sectional view showing a configuration example of a main part of the probe device according to the third embodiment of the present invention. FIG. 7 is a view showing an example of the card holder 22 used in the probe apparatus of FIG. 6, in which (a) is a view of the card holder 22 as viewed from above, and (b) is (a) ) Is a cross-sectional view taken along the line CC of FIG. 6C, and FIG. 5C is a cross-sectional view taken along the line DD of FIG.

  A card holder 22 is attached to the housing top plate 31 so as to be easily detachable. The card holder 22 has a plurality of engagement flanges 22k formed by protruding a part of the ring-shaped outer peripheral end in the centrifugal direction, and the housing top plate 31 is on the lower surface side around the inspection opening 31h. A flange receiving portion 31k is formed on the bottom. For this reason, if the card holder 22 is rotated in a predetermined direction on the lower surface of the casing top plate 31, the engaging flange portion 22 k is engaged with the flange receiving portion 31 k and the card holder 22 is attached to the casing top plate 31. be able to. If the card holder 22 is rotated in the reverse direction, the card holder 22 can be removed.

  In addition to the spring pins 26 that are brought into contact with the electrodes on the probe card 20, the interface board 24 is provided with power supply pins 26H and measurement pins 26S that are brought into contact with the electrodes on the card holder 22. The power supply pin 26H is a power supply terminal for contacting the power supply electrodes 60 and 61 on the card holder 22 and supplying power to the heater 51H in the card holder 22, and is composed of two spring pins. The measurement pin 26S is a measurement terminal for bringing the terminal of the temperature sensor 51S in the card holder 22 into contact with the measurement electrodes 62 and 63 on the card holder 22 and is composed of two spring pins. .

  On the card holder 22, a heater 51H and two temperature sensors 51S are provided. The heater 51H is arranged over the entire circumference near the outer periphery of the card holder 22, and both ends thereof are connected to the power feeding electrodes 60 and 61 on the upper surface of the card holder 22 through contact holes 61a. The two temperature sensors 51S are arranged at different positions in the radial direction, and are connected to the measurement electrodes 62 and 63 on the upper surface of the card holder 22 through contact holes 63a. The contact holes 61a and 63a are both made of a conductive member covered with an insulating film.

  With such a configuration, the terminals of the heater 51H and the temperature sensor 51S of the card holder 22 can be taken out of the probe device via the interface board 24. The power supply pin 26H and the measurement pin 26S of the interface board 24 may be connected to the temperature control device 53 via the test head 40 or may be connected to the temperature control device 53 without passing through the test head 40.

  Further, by arranging the heater 51H in the circumferential direction, the card holder 22 can be heated uniformly in the circumferential direction. Then, by arranging one temperature sensor 51S inside the card holder 22 and the other outside the card holder 22, two temperature sensors 51S can be arranged in the heat transfer direction. Therefore, the temperature control device 53 can control the heater 51H based on the temperature distribution of the card holder 22, and can perform more appropriate temperature adjustment.

  In the present embodiment, an example in which the heater 51H having a long shape in the circumferential direction of the card holder 22 has been described, but the present invention is not limited to such a case. That is, it is desirable that the heaters 51H be evenly arranged in the circumferential direction of the card holder 22, and a shape that is long in the circumferential direction is an example. For example, two or more heaters 51H may be equally arranged in the circumferential direction.

  The two temperature sensors 51S are preferably arranged on the same radius, but may not necessarily be arranged on the same radius as long as the distance from the heater 51H is different.

Embodiment 4 FIG.
In the present embodiment, another configuration example of the card holder 22 including the temperature control unit 51 will be described.

  FIG. 8 is a cross-sectional view showing a configuration example of a main part of a probe device according to Embodiment 4 of the present invention. FIG. 9 is a view showing an example of the card holder 22 used in the probe apparatus of FIG. 8. FIG. 9A is a view of the card holder 22 as viewed from below, and FIG. ) Is a cross-sectional view taken along the line EE, and FIG. 8C is a cross-sectional view taken along the line FF of FIG.

  The card holder 22 has power supply electrodes 70 and 71 and measurement electrodes 72 and 73 provided on the lower surface of the card holder 22 and is connected to a temperature control device 53 in the probe device. The heater 51H is connected to the power supply electrodes 70 and 71 through contact holes, and the temperature sensor 51S is connected to the measurement electrodes 72 and 73 through contact holes 73a.

  Compared to the case of FIG. 7 (Embodiment 3), the interface board 24 is different in that the power supply pin 26H and the measurement pin 26S are not provided. The arrangement of the heater 51H and the two temperature sensors 51S is the same as in FIG.

  In the third and fourth embodiments, the example of the probe device for the high temperature test having the heater 51H has been described. However, if the Peltier element 51P is used instead of the heater 51H, the probe for the low temperature test is exactly the same. Of course, it becomes a device.

  In each of the above embodiments, an example in which the inspection target is the semiconductor wafer 1 before dicing has been described, but the present invention is not limited to such a case. That is, the present invention can be applied to various probe devices that measure the electrical characteristics by bringing a probe pin into contact with a temperature-controlled inspection object. For example, the inspection object may be a substrate made of glass or resin, or a semiconductor chip after dicing.

  In addition, when preheating or precooling is performed, if the method according to the present embodiment is used in combination with the conventional method using radiant heat or radiant cooling, the preheating or precooling time is further shortened, and the throughput is further increased. Can be improved. That is, before the device test, the card holder 22 and the casing top plate 31 are heated or heated by the temperature control units 51 and 52 in a state where the inspection table is once raised and stopped to a height at which the probe pins do not contact the semiconductor wafer. It is more desirable to cool.

It is the external view which showed an example of the probe apparatus by Embodiment 1 of this invention. It is the figure which showed the example of an internal structure of the probe apparatus by Embodiment 1 of this invention, and is sectional drawing by the AA cut line of Fig.1 (a). It is the figure which showed the example of 1 structure of the temperature control system which the probe apparatus of FIG. 2 employ | adopts. It is the figure which showed the example of arrangement | positioning of the heaters 51H and 52H and the temperature sensors 51S and 52S, and is B arrow view of FIG.1 (b). It is the figure which showed the other structural example of the temperature control system which the probe apparatus of FIG. 2 employ | adopts (Embodiment 2). It is sectional drawing which showed one structural example of the principal part of the probe apparatus by Embodiment 3 of this invention. It is the figure which showed an example of the card holder 22 used with the probe apparatus of FIG. It is sectional drawing which showed one structural example of the principal part of the probe apparatus by Embodiment 4 of this invention. It is the figure which showed an example of the card holder 22 used with the probe apparatus of FIG. It is explanatory drawing about Z displacement and preheating at the time of a high temperature test. It is explanatory drawing about Z displacement and preliminary cooling at the time of a low-temperature test.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 10 Inspection table 11 Drive shaft 12 Drive device 20 Probe card 21 Probe pin 22 Card holder 31 Case top plate 31h Inspection opening 50-52 Temperature control unit 50H-52H Heater 50P-52P Peltier device 50S-52S Temperature Sensor 53 Temperature controller 54 Temperature control data storage unit 54D Temperature control data T ₁ , T ₂₂ , T ₃₁ target temperature

Claims (6)

An inspection table on which an inspection object is placed and driven up and down;
A probe card disposed above the inspection table and having a number of probe pins;
A probe card support for removably supporting the probe card;
A first temperature control element provided on the inspection table for heating or cooling the inspection object;
A second temperature control element provided on the probe card support, for heating or cooling the probe card support;
A temperature control device that controls the first and second temperature control elements and that heats or cools the inspection table and the probe card support before the probe pin contacts the inspection object; A probe device. Provided in the probe card support part, comprising a temperature sensor for measuring the temperature of the probe card support part,
The probe apparatus according to claim 1, wherein the temperature control device controls the second temperature control element based on a temperature measured by the temperature sensor. The probe card support part is attached to the housing top plate having an inspection opening and the housing top plate, and removably supports the peripheral end of the probe card, and the probe card is attached to the inspection opening. A card holder arranged in the section,
The probe device according to claim 1, wherein the second temperature control element is provided in the card holder. A third temperature control element provided on the housing top plate for heating or cooling the housing top plate;
The temperature control device controls the third temperature control element, and heats or cools the housing top plate before the probe pin contacts the inspection object. The probe apparatus as described. The probe card support part is attached to the housing top plate having an inspection opening and the housing top plate, and removably supports the peripheral end of the probe card, and the probe card is attached to the inspection opening. A card holder arranged in the section,
The probe apparatus according to claim 2, wherein the second temperature control element and the temperature sensor are provided in the card holder. The card holder has a ring shape having a probe opening in which the probe pin is disposed,
The second temperature control elements are evenly arranged in the circumferential direction of the card holder;
The probe apparatus according to claim 2, wherein at least two temperature sensors are arranged at different positions in the radial direction of the card holder.

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