JP2007165675A - Semiconductor inspecting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor inspecting device capable of testing a substrate for holding a contact shoe at high temperatures and at low temperatures with preventing an occurrence of a distortion and an expansion caused by the temperature. <P>SOLUTION: The semiconductor inspecting device of this invention for giving and receiving signals with each contact shoe 150 which contacts with each terminal part of a wafer substrate 2 comprises a probe substrate 100 for holding the contact shoe 150, a temperature controlling member 110 provided on the surface facing the substrate 2 of the substrate 100 and cooling and heating the substrate 100, a temperature detecting element 120 for measuring the temperature of the substrate 100, and a temperature controlling device 140 for controlling a cooling operation and a heating operation of the member 110 on the basis of the detection output of the element 120. The device 140 controls a driving of the member 110 so that the detected temperature by the element 120 is the temperature at the time of fix adjusting the contact shoe 150 to the substrate 100 or the temperature close to that temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a semiconductor inspection apparatus, and more particularly to a semiconductor inspection apparatus that performs inspection by bringing a plurality of contacts into contact with IC terminal portions of a semiconductor device.

  A wafer test of a semiconductor device is performed by, for example, applying a needle-shaped or pogo-pin-shaped contact to an IC terminal portion (pad) of each chip and electrically controlling it. The contact is fixed to a substrate called a probe card.

  When performing a wafer test under a high temperature or low temperature condition, the probe card substrate warps, strains or expands due to thermal expansion or contraction. Due to this warpage or the like, the contact may be displaced.

  Due to the displacement of the contact, there arises a problem that the contact does not contact the pad uniformly or protrudes from the pad and cannot be inspected.

  By the way, the position adjustment of the contact attached to the substrate of the probe card is usually performed at room temperature (for example, 23 ° C.). As a result, even after stabilization due to a temperature change, it is not possible to eliminate misalignment due to distortion such as thermal expansion or contraction. For this reason, there is a case where the adjustment of the contact is adjusted in accordance with the operating temperature, but it is difficult to share it in a plurality of temperature ranges.

  In addition, due to the fine integration of semiconductors, the pad pitch is 50 μm or less, and one side of the contactable part is about 20 μm. The adjustment position cannot be shared in multiple temperature zones because it is in the direction of further miniaturization. It is also a cause.

  On the other hand, by simultaneously measuring a large number of chips in order to increase the efficiency of the test, the range in which the contacts are fixed is expanded, and the area of the probe card substrate is also expanded. For this reason, it is easily affected by expansion and distortion.

  On the other hand, since the wafer test requires a reliable contact between the pad and the contactor, the temperature of the substrate becomes uniform and the time until the strain stabilizes (30 minutes to 1 hour) is set as a waiting time, and the strain is stabilized. Later, alignment in units of several μm is performed. The range of requirements for the temperature of semiconductor products has been expanded as the various products have been digitized.

  All of the above conditions are directed toward increasing the influence of strain on the probe card substrate.

Conventionally, in order to prevent occurrence of bending of the substrate due to temperature gradient in the probe card substrate, a temperature control device is attached to the surface opposite to the object to be measured of the probe card so that the temperature of both surfaces of the substrate is the same as the object to be measured. Has been proposed (see Patent Document 1).
JP 2004-150999 A

  In the thing of above-mentioned patent document 1, a board | substrate is heated or cooled by the temperature control apparatus provided in the surface opposite to the to-be-measured object of a probe card, and the temperature of both surfaces of a board | substrate is made the same as a to-be-measured object. This eliminates the bending of the probe card. For this reason, the probe card substrate is heated or cooled to a temperature different from the temperature at the time of adjusting the position of the contact attached to the substrate of the probe card. As a result, there is a problem that the temperature is different from that at the time of adjusting the position of the contact, and the probe card expands or contracts as compared with that at the time of adjusting the position of the contact, thereby causing a positional shift of the contact.

  The present invention has been made to solve the above-described problems, and provides a semiconductor inspection apparatus capable of performing high and low temperature tests without causing distortion and expansion due to temperature on a substrate holding a contact. With the goal.

  The present invention provides a semiconductor inspection apparatus in which signals are transmitted and received by each contact that contacts each terminal portion of an object to be measured, provided on a substrate that holds the contact and a surface of the substrate that faces the object to be measured. A temperature control member that cools or heats the substrate, a temperature detection element that measures the temperature of the substrate, and a temperature control that controls a cooling operation or a heating operation of the temperature control member based on a detection output of the temperature detection element. And the temperature control device drives the temperature control member so that the detected temperature of the temperature detection element is equal to or close to the temperature at which the contactor is mounted and adjusted on the substrate. It is characterized by controlling.

  In addition to the above configuration, the present invention may be configured such that a plurality of the temperature control members are provided on the substrate, and the temperature control device controls each temperature control member independently.

  In addition to the above-described configuration, the present invention provides a second temperature detecting element for detecting the temperature of the back side of the facing surface that should face the object to be measured of the substrate, and a second temperature detecting element for cooling or heating the back surface of the substrate. The temperature control device is configured such that the detected temperature of the second temperature detecting element is a temperature at which the contact is adjusted on the substrate or a temperature near the temperature. As described above, the driving of the second temperature control member can be controlled.

  According to this invention, by attaching a temperature control member between the object to be measured and the substrate, the temperature at which the contactor is adjusted to be attached to the substrate while shielding the heat from the object to be measured, or the temperature Appropriate temperature can be given so that it may become near normal temperature. By maintaining the substrate at the above temperature, the substrate is not distorted or expanded due to heat, and the contact can be brought into contact with the terminal portion of the object to be measured without causing displacement.

  Further, a plurality of temperature control members are provided on the substrate, and the temperature control device is configured to control each temperature control member independently, so that even when temperature variation occurs in the substrate, distortion is caused. Temperature control can be performed to prevent

  Further, by further providing the second temperature detection element and the second temperature control member on the back side of the opposing surface of the substrate, a temperature difference between the front and back surfaces of the substrate can be prevented.

  Embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated in order to avoid duplication of description.

  FIG. 1 is a schematic diagram showing a configuration of a semiconductor inspection apparatus according to a first embodiment of the present invention, and FIG. 2 shows a configuration of a temperature control portion of the semiconductor inspection apparatus according to the first embodiment of the present invention. 3 is a cross-sectional view taken along line AA in FIG.

  As shown in FIG. 1, a probe card substrate 100 holding a plurality of contacts 150 is attached to a head 130 of a semiconductor inspection apparatus. A temperature control member 110, which is a feature of the present invention, is attached to the surface of the probe card substrate 100 facing the wafer substrate 2, which is the object to be measured.

  The wafer substrate 2 is fixed to a chuck base 1 that can move in the XYZ directions. Although not shown, the chuck base 1 is provided with a heating control unit including a heater for heating the wafer substrate 2 for a high temperature test. The wafer substrate 2 is moved toward the probe card 100 by the movement of the chuck base 1.

  As shown in FIG. 4, a large number of chips are formed on the wafer substrate 2 as an object to be measured, and the probe card 100 applies these chips to each pad in order for each chip or for each of a plurality of chips. Probing is performed by electrically connecting the contact 150.

  As described above, the position adjustment of the contact 150 attached to the probe card substrate 100 is usually performed at room temperature (for example, 23 ° C.). When the wafer substrate 2 is heated to perform a high temperature test or the like, the surface of the probe card substrate 100 facing the wafer substrate 2 is heated by the heat. By this heating, the probe card substrate 100 is thermally expanded, and distortion occurs at the adjustment position of the contact 150.

  Therefore, in the first embodiment, a plurality of temperature control members 110 for cooling or heating the facing surface of the substrate are provided on the surface facing the wafer substrate 2 of the probe card substrate 100 to adjust the position of the contact 150. Even in a test at a different temperature, the temperature of the probe card substrate 100 is controlled so as to be at or near the temperature at the time of position adjustment. Therefore, a temperature detection element 120 that measures the temperature of the opposing surface of the probe card substrate 100 is provided, and this detection output is given to the temperature control device 140 configured by a microcomputer. The temperature control device 140 controls the cooling drive operation or the heating drive operation of the temperature control member 110 based on the output of the temperature detection element 120, and the temperature of the probe card substrate 100 is the temperature at the time of adjusting the position of the contact 150. Control at room temperature, around 23 ° C. in this embodiment.

  The first embodiment of the present invention will be further described with reference to FIGS. In the first embodiment, eight rectangular temperature control members 110 are arranged on the opposing surface (wafer surface) side of the probe card substrate 100. The temperature control member 110 may be, for example, a ceramic heater, but preferably has a small thickness in order to be attached to the wafer side of the probe card substrate 100, with a Peltier element (several mm) sandwiched between metal plates. Is used.

  As shown in the cross-sectional view of FIG. 3, in this first embodiment, a temperature composed of eight Peltier elements at equal intervals between two disk-shaped metal plates 101 and 102 having good thermal conductivity. The control member 110 is disposed and fixed by being sandwiched between the two metal plates 101 and 102. The advantages of the Peltier element are that the temperature change is fast and that heating and heat absorption are possible depending on the direction of current.

  The temperature of the probe card substrate 100 is detected by attaching a thermocouple, which is a temperature detecting element 120, in the vicinity of each temperature control member 110 on the opposite surface side of the probe card substrate 100. The detection output from the temperature detection element 120 is given to the temperature control device 140. The temperature control device 140 controls the current applied to the corresponding individual temperature control member 110 based on the output from each temperature detection element 120.

  The temperature control member 110 is attached to the probe card substrate 100 by providing an adhesive sheet 103 made of a nonconductive material between the metal plate 102 and the probe card substrate 100 and bonding them together. The contact surface between the probe card substrate 100 and the metal plate 102 is made of a non-conductor so as not to be electrically connected to the pattern on the probe card substrate 100. For example, ceramic or resin that does not cause deformation within the test temperature range (silicone resin or epoxy resin) Etc.) is used in the form of a sheet.

  If the substrate surface is not uniform among the components on the probe card substrate 100, the thickness of the adhesive sheet 103 and the shape of forming a dig may be devised. As the material and thickness of the adhesive sheet 103 increase, there is a difference in the transmission of temperature from the probe card substrate 100 to the temperature detection element 120. Therefore, a correlation between the temperature of the probe card substrate 100 and the temperature detected by the temperature detection element 120 is obtained. What is necessary is just to calculate beforehand and to control according to the correlation value.

  Each temperature detection element 120 detects the temperature of the probe card substrate 100, and the detection result is given to the temperature control device 140. The temperature control device 140 drives the temperature control member 110 corresponding to the temperature detection element 120 that performs the output corresponding to the temperature exceeding the range of the normal temperature so that the probe card 100 does not distort or expand, Control is performed so that the probe card 100 becomes normal temperature (temperature at the time of position adjustment of the contact 150).

  If the temperature at the time of adjusting the position of the contact 150 is, for example, 23 ° C., this control may be controlled with a range of 2 ° C. to 3 ° C. around 23 ° C. . For example, when the temperature of the probe card substrate 100 becomes lower than 20 ° C., the temperature control member 110 is heated, and when the probe card substrate 100 reaches 23 ° C., the temperature control member 110 is controlled to stop driving. Conversely, the temperature control member 110 is cooled when the temperature of the probe card substrate 100 becomes higher than 25 ° C., and the drive of the temperature control member 110 is stopped when the probe card substrate 100 reaches 23 ° C. By controlling in this way, the substrate temperature of the probe card 100 can be kept near normal temperature (23 ° C.).

  As described above, in the first embodiment of the present invention, the temperature control member 110 is attached between the wafer substrate 2 as the object to be measured and the probe card substrate 100, so that the heat from the wafer substrate 2 is increased. An appropriate temperature can be applied so that the probe card substrate 100 is at room temperature while blocking. By keeping the probe card 100 at room temperature, the substrate of the probe card 100 is free from distortion and expansion due to heat, and the contact 150 can contact the pad of the wafer 2 without causing a positional shift. Moreover, since it is not necessary to wait until the probe card 100 reaches the test temperature, the processing time can be shortened.

  The wafer substrate 2 is applied with a temperature from a chuck stage (stage) 1 holding the wafer substrate 2, and the wafer substrate 2 needs to be brought into contact with a contact 150 that holds the chip here on the probe card substrate 100. Therefore, it moves under the probe card substrate 100 while moving together with the chuck base 1. Further, when a chip (aluminum (Al) or the like) obtained by shaving the terminal of the object to be measured is attached to the needle tip of the contact 150 of the probe card substrate 100, it is provided at a position different from the chuck base 1. It is necessary to move to the polishing table and perform polishing at that position. The polishing table is not temperature controlled. Thus, the positional relationship between the object to be measured and the probe card substrate 100 to which the temperature is applied during the test changes every moment. In some cases, the probe card substrate 100 and the wafer substrate 2 to be measured are arranged a few mm apart from each other so that they are overlapped on the entire surface. There is also.

  In the first embodiment of the present invention, as described above, the time during which the wafer substrate 2 and the probe card substrate 100 are separated from each other during measurement is long, and distortion occurs even when temperature variation occurs in the probe card substrate 100. The plurality of temperature control members 110 are divided into a large number of blocks so that the temperature control device 140 can control each temperature control member 110.

  As described above, in any case, it is not necessary to consider the temperature characteristics of the components mounted on the probe card substrate 100 by keeping the probe card substrate 100 at room temperature. Conventionally, the material of the probe card substrate 100 and the material for fixing the contact 150 need to be changed according to the test temperature. However, according to the present invention, since the probe card substrate 100 is kept at room temperature, it is not necessary to consider materials that are wide in the operating temperature range but difficult to process.

  Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 5 is a plan view showing the configuration of the temperature control portion of the semiconductor inspection apparatus according to the second embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same part as 1st Embodiment, and the description is omitted here in order to avoid duplication of description.

  As shown in FIG. 5, the temperature control member 110 of the first embodiment is formed in a rectangular shape, whereas in the second embodiment, the temperature control element 110 a is a circular probe card substrate 100. A fan shape is formed along the planar shape. Then, eight temperature control members 110a formed in a fan shape are arranged on the surface of the probe card substrate 110 facing the wafer substrate 2 at equal intervals. Other configurations are the same as those of the first embodiment.

  By using the fan-shaped temperature control member 110a in this manner, the surface of the probe card substrate 100 facing the wafer substrate 2 can be largely covered with the temperature control member 110a, and the temperature control of the substrate of the probe card 100 can be performed. The area that can be expanded can be expanded, and an improvement in responsiveness of temperature control can be expected.

  Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 6 is a schematic cross-sectional view showing the configuration of the temperature control portion of the semiconductor inspection apparatus according to the third embodiment of the present invention. In addition, the same code | symbol is attached | subjected to the same part as 1st, 2nd embodiment, and the description is omitted here in order to avoid duplication of description.

  This third embodiment is a first method for measuring the temperature of the back surface of the opposing surface of the probe card 100 in order to eliminate the occurrence of expansion, distortion, etc. even when there is a difference in the temperature between the front and back surfaces of the probe card 100. 2 temperature detection elements 125 and a second temperature control member 115 controlled according to the detection output of the second temperature detection element 125 is provided. That is, the second temperature detection elements 125 are attached to a plurality of locations on the back side of the opposite surface of the probe card 100. A second temperature control member 115 made of a Peltier element is disposed in a recess 130 a provided in the head 130 so that the back side of the probe card 100 can be heated or cooled. Note that the probe card substrate 100 facing the wafer substrate 2 is provided with the temperature control member shown in the first embodiment or the second embodiment.

  The temperature control device 140 takes in the output from the first detection element 120 and the output from the second temperature detection element 125, and controls the temperature control members 110 and 115 so that the substrate temperatures on the front and back sides of the probe card 100 become room temperature. Control the drive. By controlling the probe card 100 so that it is at room temperature together with the front and back surfaces of the probe card 100, the temperature control members 110 and 115 on the front and back sides can be efficiently controlled even when the substrate is accumulated and a temperature difference occurs between the front and back sides. By doing so, it can be controlled to eliminate the temperature difference.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and is intended to include meanings equivalent to the scope of claims for patent and all modifications within the scope.

  The present invention can be applied to a probing inspection apparatus for a semiconductor device, and can efficiently perform a high temperature inspection and a low temperature inspection.

It is a schematic diagram which shows the structure of the semiconductor inspection apparatus concerning 1st Embodiment of this invention. It is a top view which shows the structure of the temperature control part of the semiconductor inspection apparatus concerning 1st Embodiment of this invention. It is the sectional view on the AA line of FIG. It is a typical top view which shows the wafer as a to-be-measured object.

It is concerning embodiment of this invention.
It is a top view which shows the structure of the temperature control part of the semiconductor inspection apparatus concerning 2nd Embodiment of this invention. It is a top view which shows the structure of the temperature control part of the semiconductor inspection apparatus concerning 1st Embodiment of this invention.

Explanation of symbols

  1 chuck base, 2 wafer substrate, 100 probe substrate, 110 temperature control member, 120 temperature detection element, 140 temperature control device.

Claims (3)

  In a semiconductor inspection apparatus that transmits and receives a signal by each contact that contacts each terminal portion of an object to be measured, a substrate that holds the contact and the substrate that is provided on a surface of the substrate that faces the object to be measured. A temperature control member that cools or heats, a temperature detection element that measures the temperature of the substrate, and a temperature control device that controls a cooling operation or a heating operation of the temperature control member based on a detection output of the temperature detection element. The temperature control device controls the drive of the temperature control member so that the temperature detected by the temperature detection element is equal to or close to the temperature at which the contact is adjusted for attachment to the substrate. A semiconductor inspection apparatus.   The semiconductor inspection apparatus according to claim 1, wherein a plurality of the temperature control members are provided on the substrate, and the temperature control device controls each temperature control member independently. A second temperature detecting element for detecting the temperature of the back surface side of the facing surface to be opposed to the object to be measured of the substrate, and a second temperature control member for cooling or heating the back surface of the substrate. The control device drives the second temperature control member so that the detected temperature of the second temperature detection element is equal to or close to the temperature at which the contact is adjusted on the substrate. The semiconductor inspection apparatus according to claim 1, wherein the semiconductor inspection apparatus is controlled.

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