JP2001210683A - Chucking mechanism of prober - Google Patents
Chucking mechanism of proberInfo
- Publication number
- JP2001210683A JP2001210683A JP2000016256A JP2000016256A JP2001210683A JP 2001210683 A JP2001210683 A JP 2001210683A JP 2000016256 A JP2000016256 A JP 2000016256A JP 2000016256 A JP2000016256 A JP 2000016256A JP 2001210683 A JP2001210683 A JP 2001210683A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- chuck
- prober
- semiconductor device
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Measuring Leads Or Probes (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ウェハ上に形成さ
れた複数の半導体デバイスの電気的特性を測定するため
に、ウェハを移動ステージに設けられたチャック機構上
に載置して保持し、テスタに接続される触針（プローブ
ニードル）を各半導体デバイスの電極パッドに順次接触
させて、半導体チップの電気的な特性検査を行うプロー
バに関するもので、特にそのチャック機構の改良に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring the electrical characteristics of a plurality of semiconductor devices formed on a wafer, the wafer being placed and held on a chuck mechanism provided on a moving stage. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a prober for inspecting electrical characteristics of a semiconductor chip by sequentially contacting a stylus (probe needle) connected to a tester with an electrode pad of each semiconductor device, and particularly relates to improvement of a chuck mechanism thereof.
【０００２】[0002]
【従来の技術】半導体デバイスの製造工程においては、
製造効率を向上させるために、ウェハに形成された多数
の半導体デバイスの電極パッドに触針を接触させて、Ｉ
Ｃテスタからの試験信号を印加して半導体デバイスから
の出力信号を検出し、正常に動作しないデバイスは後の
組み立て工程から除くと共に、その検査結果が速やかに
フィードバックされる。この検査に使用されるのがプロ
ーバで、図３にその従来の一般的な構成の概略を示す。2. Description of the Related Art In a semiconductor device manufacturing process,
In order to improve the manufacturing efficiency, a stylus is brought into contact with the electrode pads of a large number of semiconductor devices formed on the wafer,
A test signal from the C tester is applied to detect an output signal from the semiconductor device, and a device that does not operate normally is removed from a later assembling process, and the test result is promptly fed back. A prober is used for this inspection, and FIG. 3 schematically shows a conventional general configuration.
【０００３】図３において、１はプローバを、２はウェ
ハ１０のチャック機構を、３はチャック機構２を支持し
ている移動ステージを、４はプローブカードを、５はプ
ローブカード４に設けられた触針を、６はプローブカー
ドを保持する部材を、７はテスタを、８はテスタ７の回
転軸を示している。移動ステージ３は、移動機構により
３次元方向に移動可能であると共に、ウェハ１０を吸着
保持するチャック機構２が設けられている。触針５は検
査する半導体デバイスの電極パッドに合わせて作られて
おり、プローブカード４は検査する半導体デバイスの電
極パッドの配列が異なる毎に交換される。プローブカー
ド４の上面には触針５に接続される電極が設けられてお
り、検査時にはテスタ７の端子と触針５が接続される。
この状態で、テスタ７から所定の信号を印加して半導体
デバイスからの出力信号を検出し、それが正常であるか
どうかを検査する。なお、検査するウェハ１０は、ウェ
ハカセットに複数収容されて供給され、図示していない
搬送機構で移動ステージ３のチャック機構２上に載置さ
れ、検査終了後再びウェハカセットに戻されて回収され
る。In FIG. 3, 1 is a prober, 2 is a chuck mechanism for the wafer 10, 3 is a moving stage supporting the chuck mechanism 2, 4 is a probe card, and 5 is a probe card. A stylus, a member 6 for holding the probe card, a tester 7, and a rotation axis 8 of the tester 7 are shown. The moving stage 3 is movable in a three-dimensional direction by a moving mechanism, and is provided with a chuck mechanism 2 for holding the wafer 10 by suction. The stylus 5 is made in accordance with the electrode pad of the semiconductor device to be inspected, and the probe card 4 is replaced every time the arrangement of the electrode pad of the semiconductor device to be inspected is different. An electrode connected to the stylus 5 is provided on the upper surface of the probe card 4, and the terminal of the tester 7 and the stylus 5 are connected at the time of inspection.
In this state, a predetermined signal is applied from the tester 7 to detect an output signal from the semiconductor device, and it is checked whether the output signal is normal. A plurality of wafers 10 to be inspected are housed and supplied in a wafer cassette, placed on the chuck mechanism 2 of the moving stage 3 by a transport mechanism (not shown), and returned to the wafer cassette again after the inspection and collected. You.
【０００４】このプローバ１のチャック機構２は、測定
される半導体デバイスに対して温度をコントロールでき
るようになっているものが多い。これによって測定時の
温度条件を変え、半導体デバイスの使用環境に準じた環
境での試験、あるいは加速試験等を行えるようになって
いる。このようなチャック機構２を高温チャック機構、
あるいは高低温チャック機構と一般に呼んでいる。通常
これらのチャック機構２は、図４にその断面図で示すよ
うにチャック機構２全体の温度が一様になるような設計
となっており、温度制御用のセンサ２４もチャック機構
２の内部の適当な１つの個所に埋め込まれている。即ち
チャック機構２は、ウェハ１０をその表面で保持する、
金属製のチャック部２１と、セラミック台２２と、その
間に挟持して設けられた加熱／冷却機構２３とから構成
されている。そして、この加熱／冷却機構２３は、チャ
ック機構全体を一様な温度にするように、チャック部２
１の裏面のほぼ全面に接するように設けられ、チャック
部２１裏面の適当な１つの個所にセンサ２４が埋め込ま
れている。In many cases, the chuck mechanism 2 of the prober 1 can control the temperature of the semiconductor device to be measured. As a result, the temperature condition at the time of measurement is changed, and a test in an environment similar to the usage environment of the semiconductor device, an acceleration test, or the like can be performed. Such a chuck mechanism 2 is a high-temperature chuck mechanism,
Or, it is generally called a high / low temperature chuck mechanism. Normally, these chuck mechanisms 2 are designed so that the temperature of the entire chuck mechanism 2 becomes uniform as shown in the sectional view of FIG. 4, and a temperature control sensor 24 is also provided inside the chuck mechanism 2. It is embedded in one suitable location. That is, the chuck mechanism 2 holds the wafer 10 on its surface.
It is composed of a metal chuck part 21, a ceramic base 22, and a heating / cooling mechanism 23 provided to be sandwiched therebetween. The heating / cooling mechanism 23 controls the chuck section 2 so that the entire chuck mechanism has a uniform temperature.
The sensor 24 is provided so as to be in contact with substantially the entire back surface of the chuck 1, and a sensor 24 is embedded at an appropriate location on the back surface of the chuck portion 21.
【０００５】この場合、測定される半導体デバイスの発
熱量が少なければ問題が無いが、半導体デバイスによっ
ては測定時の自己発熱がかなり大きいものもある。例え
ば、このような半導体デバイスをある温度条件で測ろう
とする場合、センサと被測定半導体デバイスの距離が離
れていると、実際の半導体デバイスの温度とセンサの認
識している温度にかなりの差が発生し、正確な測定温度
の設定ができない。また、発熱する半導体デバイスを冷
却して測定する場合、発熱半導体デバイスを基準に冷却
すると、それ以外の測定していない半導体デバイスに対
しては過冷却の状態となり、場合によっては半導体デバ
イスにダメージを与える恐れがある。[0005] In this case, there is no problem if the calorific value of the semiconductor device to be measured is small. However, some semiconductor devices generate a considerable amount of self-heating during measurement. For example, when trying to measure such a semiconductor device under a certain temperature condition, if the distance between the sensor and the semiconductor device to be measured is large, there is a considerable difference between the actual temperature of the semiconductor device and the temperature recognized by the sensor. Occurs and the measurement temperature cannot be set accurately. In addition, when a semiconductor device that generates heat is cooled and measured, if the semiconductor device is cooled based on the heat-generating semiconductor device, other semiconductor devices that are not measured are in a supercooled state, and in some cases, the semiconductor device may be damaged. May give.
【０００６】したがって、チャック機構全体の温度制御
では、上記の問題を解決することが難しい。ただ高温側
だけであれば半導体デバイス側の温度を、半導体デバイ
ス中のｐｎ接合を利用することでテスタ側で測定し、プ
ローバ側の高低温チャック機構温度を制御することであ
る程度は可能であるが、この方法は汎用性に欠ける。ま
た低温側については、仮にこの方法で被測定半導体デバ
イス温度を制御するにしても、上記したようにその他の
半導体デバイスが過冷却状態になることを防止できな
い。したがって、この方法も汎用性に欠け、かつチャッ
ク機構全体を冷却することはエネルギー効率の面からも
不利である。Therefore, it is difficult to solve the above problem by controlling the temperature of the entire chuck mechanism. However, if it is only the high temperature side, it is possible to some extent by measuring the temperature of the semiconductor device side with the tester side by using the pn junction in the semiconductor device and controlling the temperature of the high and low temperature chuck mechanism on the prober side. However, this method lacks versatility. On the low-temperature side, even if the temperature of the semiconductor device to be measured is controlled by this method, it is not possible to prevent the other semiconductor devices from being supercooled as described above. Therefore, this method also lacks versatility, and cooling the entire chuck mechanism is disadvantageous in terms of energy efficiency.
【０００７】[0007]
【発明が解決しようとする課題】本発明の目的は、上記
の問題に鑑み、半導体デバイスの使用環境温度に正確に
かつ迅速に温度設定して、半導体デバイスの検査を正確
に行えるようにしたプローバのチャック機構を提供する
ことである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, it is an object of the present invention to provide a prober which can accurately and quickly set the temperature of the environment in which a semiconductor device is to be used so that the semiconductor device can be inspected accurately. Is to provide a chuck mechanism.
【０００８】[0008]
【課題を解決するための手段】本発明は、前記課題を解
決するための手段として、特許請求の範囲の各請求項に
記載のプローバのチャック機構を提供する。請求項１，
２に記載のプローバのチャック機構は、ウェハを保持す
るチャック部表面を複数の領域に区分し、各々の領域毎
に独立した加熱／冷却機構及び温度センサを設けること
により、測定中の半導体デバイスの温度を正確に設定で
き、信頼性のある測定を行うことができる。また過熱及
び過冷却等による半導体デバイスの破壊を防止できる。
更に狭い領域単位で温度管理ができることから、温度設
定を早く行え、半導体デバイスの測定時間も短縮でき
る。ただし、あまり領域を狭く設定しすぎると、加熱／
冷却機構及びセンサの設置にコストがかかるので、５領
域程度が最適であろう。According to the present invention, as a means for solving the above-mentioned problems, there is provided a chuck mechanism of a prober described in each of the claims. Claim 1,
2. The chuck mechanism of the prober according to item 2, wherein the surface of the chuck portion holding the wafer is divided into a plurality of areas, and an independent heating / cooling mechanism and a temperature sensor are provided for each of the areas. Temperature can be set accurately and reliable measurements can be made. In addition, destruction of the semiconductor device due to overheating and overcooling can be prevented.
Further, since the temperature can be controlled in a narrow area unit, the temperature can be set quickly and the measurement time of the semiconductor device can be reduced. However, if the area is set too narrow, heating /
Since the installation of the cooling mechanism and the sensor is costly, about 5 regions will be optimal.
【０００９】[0009]
【発明の実施の形態】以下、本発明の実施の形態のプロ
ーバのチャック機構を、図１，２を参照して説明する。
図１，２は、本発明のプローバのチャック機構の平面図
及び縦断面図を示している。チャック機構２は、ウェハ
１０をその表面上に載置して保持するチャック部２１
と、その下部に設けられるセラミック台２２と、これら
の間に挟持して設置される加熱／冷却機構２３とから構
成されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a chuck mechanism of a prober according to an embodiment of the present invention will be described with reference to FIGS.
1 and 2 show a plan view and a longitudinal sectional view of a chuck mechanism of a prober of the present invention. The chuck mechanism 2 includes a chuck unit 21 for mounting and holding the wafer 10 on its surface.
And a ceramic base 22 provided thereunder, and a heating / cooling mechanism 23 interposed therebetween.
【００１０】チャック部２１は、金属で形成され、その
表面には、例えばウェハを吸引保持するための吸引空気
が通る溝（図示されず）が設けられるか、又はチャック
部２１がポーラス体で形成されている。このチャック部
２１の下面に接して加熱／冷却機構２３が設けられる。
この加熱／冷却機構２３は、図１，２に示された実施例
では、チャック部２１の中心部と周辺部４つの５個所の
領域に区分されて設置されている。この領域の区分は、
５つ以外にも最適と考えられる数を選定して行えるもの
である。The chuck portion 21 is formed of metal, and its surface is provided with a groove (not shown) through which suction air for sucking and holding the wafer passes, or the chuck portion 21 is formed of a porous body. Have been. A heating / cooling mechanism 23 is provided in contact with the lower surface of the chuck 21.
In the embodiment shown in FIGS. 1 and 2, the heating / cooling mechanism 23 is divided into five regions, that is, a central portion of the chuck portion 21 and four peripheral portions. The division of this area is
It is possible to select an optimum number other than five.
【００１１】それぞれの領域に設置される加熱／冷却機
構２３としては、適宜の公知の加熱／冷却器が採用でき
るものであり、例えば、面ヒータの加熱層と冷却流体の
通路を設けた冷却層との二重層構造にしたものや、熱伝
導体内に加熱ヒータを巻き付けた冷却管を埋設した一層
構造の加熱／冷却機構等、様々のものが考えられる。電
気加熱ではなく、熱流体を循環させてもよく、またペル
チェ素子を使用してもよい。As the heating / cooling mechanism 23 installed in each area, an appropriate known heating / cooling device can be adopted. For example, a cooling layer provided with a heating layer of a surface heater and a passage of a cooling fluid is provided. And a heating / cooling mechanism having a single-layer structure in which a cooling pipe in which a heater is wound around a heat conductor is embedded. Instead of electric heating, a heat fluid may be circulated, or a Peltier element may be used.
【００１２】更にこれらの加熱／冷却機構２３に１対１
で対応する形でチャック部２１の各領域内の裏面に埋め
込まれるように温度センサ２４が設けられる。この温度
センサ２４としては、例えば熱電対、白金抵抗体等が適
している。この温度センサ２４からの信号が制御装置２
５に取り込まれて、これに基づいて被測定半導体デバイ
スが存在する領域の温度が最適な温度になるように加熱
／冷却機構２３が制御される。またこの加熱／冷却機構
２３は、断熱効果があるセラミックで形成されたセラミ
ック台２２で上面を残して覆われているので、チャック
部２１を効率良く加熱・冷却することができる。これに
より、測定中の半導体デバイス付近のチャック部の領域
内の温度を例えば５０℃〜１５０℃の範囲、分解能±１
℃で、適切にコントロールすることができる。Further, these heating / cooling mechanisms 23 are provided on a one-to-one basis.
The temperature sensor 24 is provided so as to be embedded in the back surface in each region of the chuck portion 21 in a corresponding manner. As the temperature sensor 24, for example, a thermocouple, a platinum resistor, or the like is suitable. The signal from the temperature sensor 24 is transmitted to the controller 2
The heating / cooling mechanism 23 is controlled so that the temperature of the region where the semiconductor device to be measured is present becomes an optimum temperature based on the measurement. Further, since the heating / cooling mechanism 23 is covered except for the upper surface with the ceramic base 22 formed of ceramic having a heat insulating effect, the chuck portion 21 can be efficiently heated and cooled. Thereby, the temperature in the area of the chuck portion near the semiconductor device being measured is set to, for example, a range of 50 ° C. to 150 ° C. and a resolution of ± 1.
At ℃, it can be controlled appropriately.
【００１３】以上説明したように、本発明のプローバの
チャック機構においては、測定時に発熱量の大きい半導
体デバイスの測定においても、設定された温度と実際に
使用する環境における半導体デバイス温度との差が少な
く正確な測定が行え、かつ測定していない半導体デバイ
ス部分についても熱的なダメージを与えることがない。As described above, in the prober chuck mechanism of the present invention, the difference between the set temperature and the temperature of the semiconductor device in the environment in which the device is actually used is measured even in the measurement of a semiconductor device having a large amount of heat during measurement. A small and accurate measurement can be performed, and no thermal damage is given to a semiconductor device portion not measured.
【図１】本発明の実施の形態のプローバのチャック機構
の平面図である。FIG. 1 is a plan view of a chuck mechanism of a prober according to an embodiment of the present invention.
【図２】図１のＡ−Ａ線におけるチャック機構の縦断面
図である。FIG. 2 is a longitudinal sectional view of the chuck mechanism taken along line AA of FIG.
【図３】プローバの全体構成図である。FIG. 3 is an overall configuration diagram of a prober.
【図４】従来のプローバのチャック機構の縦断面図であ
る。FIG. 4 is a longitudinal sectional view of a chuck mechanism of a conventional prober.
２…チャック機構 ２１…チャック部 ２２…セラミック台 ２３…加熱／冷却機構 ２４…温度センサ 2. Chuck mechanism 21 ... Chuck section 22 ... Ceramic table 23 ... Heating / cooling mechanism 24 ... Temperature sensor
───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2G011 AA02 AA17 AB06 AB10 AE03 AF06 2G032 AB02 AB13 AE01 AE03 AE11 AF01 AH07 4M106 AA01 BA01 CA01 DD30 DJ04 DJ05 5F031 CA02 CA20 GA25 MA33 9A001 BB05 KK54 LL05 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2G011 AA02 AA17 AB06 AB10 AE03 AF06 2G032 AB02 AB13 AE01 AE03 AE11 AF01 AH07 4M106 AA01 BA01 CA01 DD30 DJ04 DJ05 5F031 CA02 CA20 GA25 MA33 9A001 BB05 KK54 LL05
Claims (2)
イスの電気的特性を検査するために、移動ステージに設
けられたウェハを保持するプローバのチャック機構にお
いて、 ウェハを保持するチャック部の表面を複数の領域に区分
し、該複数の領域に分けられたそれぞれの領域に対応す
るチャック部の裏面に接して個々に加熱／冷却機構を設
けると共に、それぞれの領域毎に温度センサを設けて、
領域単位で温度管理できるようにしたことを特徴とする
プローバのチャック機構。In order to inspect electrical characteristics of a large number of semiconductor devices formed on a wafer, a chuck mechanism of a prober for holding a wafer provided on a moving stage has a surface of a chuck section for holding a wafer. Dividing into a plurality of regions, while individually providing a heating / cooling mechanism in contact with the back surface of the chuck portion corresponding to each region divided into the plurality of regions, providing a temperature sensor for each region,
A prober chuck mechanism characterized in that the temperature can be controlled in area units.
らなる５つの領域であることを特徴とする請求項１に記
載のプローバのチャック機構。2. The prober chuck mechanism according to claim 1, wherein the plurality of regions are five regions including a central portion and a peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000016256A JP2001210683A (en) | 2000-01-25 | 2000-01-25 | Chucking mechanism of prober |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000016256A JP2001210683A (en) | 2000-01-25 | 2000-01-25 | Chucking mechanism of prober |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001210683A true JP2001210683A (en) | 2001-08-03 |
Family
ID=18543423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000016256A Pending JP2001210683A (en) | 2000-01-25 | 2000-01-25 | Chucking mechanism of prober |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001210683A (en) |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004040321A1 (en) * | 2002-10-31 | 2004-05-13 | Advantest Corporation | Probe card |
| EP1557877A1 (en) * | 2002-10-21 | 2005-07-27 | Tokyo Electron Limited | Probe device that controls temperature of object to be inspected and probe inspection method |
| JP2005277048A (en) * | 2004-03-24 | 2005-10-06 | Sumitomo Electric Ind Ltd | Semiconductor heater |
| JP2006147612A (en) * | 2004-11-16 | 2006-06-08 | Seiko Epson Corp | Semiconductor testing device and testing method of semiconductor device |
| JP2007180335A (en) * | 2005-12-28 | 2007-07-12 | Tokyo Seimitsu Co Ltd | Prober |
| JP2007201484A (en) * | 2004-11-30 | 2007-08-09 | Sumitomo Electric Ind Ltd | Wafer holder for wafer prober, and wafer prober mounted with the same |
| US7405584B2 (en) | 2006-05-16 | 2008-07-29 | Tokyo Seimitsu Co., Ltd. | Prober and probe contact method |
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