TWI506684B - Electronic components and manufacturing method thereof - Google Patents

Description

Electronic component and method of manufacturing same

This case relates to an electronic component and a method of fabricating the same. In particular, the present invention suppresses the shrinkage of the sintering of the element layer by sintering the suppression layer together with the element layer, and considers an electronic component that suppresses the influence of the layer on the overall electrical properties.

With the market trend of combining information and wireless communication, as well as the modern people's versatility and portability of electronic products, the electronic components in various electronic products tend to be lighter, thinner and shorter. In terms of passive components, the application range of laminated ceramic components is quite extensive. However, in order to achieve thinness and shortness while maintaining good electrical properties, in addition to improving the properties of the raw materials, it is also possible to proceed from the process direction to achieve better electronic component characteristics.

The current laminated ceramic component 1 is as shown in the first figure, and the manufacturing method is to provide the terminal electrode 12 to both ends of the laminated ceramic layer 11 after the laminated ceramic layer 11 is passed through the sintering process, so that the laminated ceramic component 1 can be externally connected. The circuit (not shown) is connected. However, under various processes such as a dipping process of the terminal electrode 12, the electrode depth d _{121 of the} terminal electrode is not easily controlled, and thus the electrode depth d ₁₂₁ is likely to cause a large difference. Since the characteristics of various electronic components are greatly related to the distance between the electrodes (for example, the resistance value of the resistor is proportional to the distance between the electrodes, and the capacitance value of the panel capacitor is inversely proportional to the distance between the electrodes), so if the entire batch of electrons The greater the difference in electrode depth d ₁₂₁ of the element, that is, the greater the difference in electrode distance d ₁₂₂ representing the distance between the end electrodes, which seriously affects the yield of the entire batch of electronic components.

Further, as shown in the second figure, the laminated ceramic green body 21 is placed on the carrier ceramic substrate 24 for sintering. However, at high During the temperature sintering process, some reactions occur between the laminated ceramic green body 21 and the bearing ceramic substrate 24, which seriously affects the overall characteristics of the electronic component. In addition, when the laminated ceramic green body 21 is sintered, the shrinkage phenomenon is inevitably caused by the densification process of the ceramic sintering itself, so that the sintered laminated ceramic layer 11 will increase the overall characteristics of the electronic component due to internal shrinkage and the like. Instability.

In view of the deficiencies in the prior art, the applicant of this case, after careful experimentation and research, and a perseverance spirit, finally conceived the "electronic components and their manufacturing methods" in this case, combined with the suppression layer to suppress the sintering shrinkage method, and through The choice of suppression layer minimizes the difference in electrode depth for the overall electrical difference. As a result, the electrical differences of the entire batch of electronic components can be minimized to further improve the overall yield.

In order to enhance the yield of the laminated ceramic component, the present invention serves as a suppressing layer for suppressing shrinkage of the element layer by selecting a material having a specific relative electrical property. The effect of the depth of the terminal electrode on the overall electrical properties can be minimized by suppressing the choice of the electrical relative relationship between the layer material and the component layer material itself.

In order to achieve the above object, the present invention provides an electronic component having a specific electrical property, comprising: a sintered component layer having a first electrical property; and a sintering inhibiting layer having a second electrical property and The sintered element layer forms a parallel state, wherein the second electrical property is sized such that the electronic component is in the parallel state, the specific electrical system being dominated by the first electrical property.

In order to achieve the above object, the present invention further provides an electronic component having a specific electrical property, comprising: a component layer having a first electrical property and a first sintering shrinkage amount; and a suppression layer having a first Two electrical and one a second amount of sintering shrinkage and located on the component layer, wherein if the electronic component is one of a resistor and an inductor, the first electrical property is less than the second electrical property, and if the electronic component is a capacitor The first electrical property is greater than the second electrical property.

In order to achieve the above object, the present invention further provides an electronic component having a specific electrical property, comprising: a sintered component layer having a first electrical property; and a sintering inhibiting layer having a second electrical property, and Forming a parallel state with the sintered element layer, wherein the second electrical property is sized such that the electronic component is in the parallel state, and the specific electrical system is dominated by the first electrical property.

In order to achieve the above object, the present invention also provides an electronic component having an elemental electrical property, comprising: a sintered component layer having a first electrical property; and a sintering inhibiting layer having a second electrical property, and The magnitude of the second electrical property causes the electrical properties of the component to be dominated by the first electrical property.

The "electronic component and its manufacturing method" as set forth in the present disclosure will be fully understood by the following examples, so that those skilled in the art can do so. However, the implementation of the present invention is not limited by the following embodiments. Other embodiments may be derived from the spirit of the embodiments disclosed herein, and such embodiments are within the scope of the invention.

Please refer to the third figure (a), which is a schematic diagram of the electronic component 3 of the present invention. In order to fully understand the overall structure of the electronic component 3, the third figure (a) partially dissects the electronic component 3. The electronic component 3 includes an element layer 31, a terminal electrode 32, a first suppression layer 331 and a second suppression layer 332, and the overall electronic component 3 has a specific electrical property, and the component layer 31 has a first electrical property, and the second suppression layer 332 has a second electrical property, the left end electrode depth is the electrode depth d ₃₂₁ , and the distance between the left and right end electrodes is the electrode distance d ₃₂₂ . Although the depth of the right end electrode may be different from the depth of the left end electrode, the depth of the end electrode on the left and right sides may affect the distance between the electrodes, thereby affecting the specific electrical properties of the overall electronic component 3, but the electrode depths on the left and right sides. The effect of the difference is not different, so only the left end electrode depth is used as a representative. Similarly, although the electrical properties of the first suppression layer 331 and the electrical properties of the second suppression layer 332 may be different from each other, there is no difference in the manner in which the two are affected by the overall electrical properties, and therefore only the second of the second suppression layer Electricality is explained as a representative. In addition, in order to facilitate the understanding of the position of the terminal electrode 32 on the electronic component 3, the thickness of the terminal electrode 32 is expressed in a more exaggerated manner. In fact, the terminal electrode 32 is plated on both ends of the electronic component 3 in a transparent manner.

Since the terminal electrode 32 is electrically connected to the external circuit, the terminal electrode 32 can be located on the common side surface of the element layer 31, the first suppression layer 331 and the second suppression layer 332, and the terminal electrode 32 simultaneously with the element layer 31. The first suppression layer 331 and the second suppression layer 332 are electrically connected. Therefore, the electrical relationship between the respective elements of the electronic component 3 of the present invention is as shown in the third diagram (b), wherein each of the third diagram (b) The components represented by the component symbols correspond to the components represented by the respective component symbols of the third diagram (a), and the component layer 31, the first suppression layer 331 and the second suppression layer 332 are electrically connected in parallel. The specific electrical properties of the entire electronic component 3 are formed.

Please refer to the third figure (a) and the third figure (b). Since the second suppression layer 332 is formed on the element layer 31, and the terminal electrode 32 is formed by the entire method of the electronic component 3, such as a immersion process, the terminal electrode 32 is covered by the periphery. A suppression layer 331, a second suppression layer 332, and both ends of the element layer 31 are covered therein. Therefore, since only the two ends of the element layer 31 are in contact with the terminal electrode 32, the electrode depth d ₃₂₁ does not affect the electrical performance of the element layer 31, but since the first suppression layer 331 and the second suppression layer 332 are The terminal electrode 32 is in contact with each other, and a part of the lower surface or the upper surface thereof is also covered by the terminal electrode 32, so that the electrode depth d ₃₂₁ has an influence on the electrical performance of the suppression layer.

In the prior art, since the upper and lower surfaces of the element layer itself are covered by the terminal electrodes, the element layer electrical properties directly representing the overall electrical properties cannot be removed from the electrode depth d ₁₂₁ . Therefore, the electronic component 3 of the present invention transfers the influence of the electrode depth d ₃₂₁ to the first and second suppression layers 331, 332, and selects the material for the electrical value of the first and second suppression layers 331, 332 to make the overall electron The specific electrical properties of the component are unaffected by the first and second suppression layers 331, 332 and are dominated by the component layer 31. Therefore, the specific electrical properties can neglect the influence of the electrode depth d ₃₂₁ , and only the electrical control of the component layer 31 needs to be considered.

In one embodiment, the electronic component 3 is a laminated ceramic component, and the laminated ceramic component is used as a resistor, so that the specific electrical property, the first electrical property, and the second electrical property are specific resistance values, respectively. A resistance value and a second resistance value. Since the reciprocal of the specific resistance value in the parallel state is equal to the first resistance value and the reciprocal addition of the second resistance value, the second resistance value should be greater than the first resistance value such that the first resistance value dominates the magnitude of the specific resistance value. Preferably, the second resistance value is much larger than the first resistance value, so that the second resistance value can be directly ignored.

In one embodiment, the laminated ceramic component is used as a capacitor, and thus the specific electrical property, the first electrical property, and the second electrical property are a specific capacitance value, a first capacitance value, and a second capacitance value, respectively. Since the specific capacitance value in the parallel state is equal to the addition of the first capacitance value and the second capacitance value, the second capacitance value should be smaller than the first capacitance value such that the first capacitance value dominates the magnitude of the specific capacitance value. Preferably, the second capacitance value is much smaller than the first capacitance value, so that the second capacitance value can be directly ignored.

In one embodiment, the laminated ceramic component is used as an inductor, and thus the specific electrical property, the first electrical property, and the second electrical property are respectively a specific inductance value, a first inductance value, and a second inductance value. Since the inductance value formula of the parallel state corresponds to the resistance value formula of the parallel state, the relationship between the first inductance value and the second inductance value is the same as the relationship between the first resistance value and the second resistance value.

Since the electrical selection of the first and second suppression layers 331, 332 has made their electrical properties negligible, the specific electrical properties of the electronic component 3 are dominated by the first electrical property of the component layer 31, and the electrode depth d ₃₂₁ is affected. The first and second suppression layers 331, 332 of the influence are independent of the magnitude of the specific electrical properties.

In the above embodiment, the electronic component 3 may have only one suppression layer 331 to suppress the amount of shrinkage when the element layer 31 is sintered, and at the same time reduce the influence of the electrode depth d ₃₂₁ on the characteristics of the electronic component.

Please refer to the fourth figure, which is a schematic diagram of the electronic component green body 4 of the present invention under the sintering process. The electronic component green body 4 has the element layer green body 41, the first suppression layer green body 431, and the second suppression layer green body 432, and the element layer is sandwiched between the first suppression layer green body 431 and the second suppression layer green body 432. The green body 41 and the electronic component green body 4 are brought into contact with the carrier substrate 44 by the first suppression layer green body 431, and placed in a heating furnace (not shown) through the carrier substrate 44 to be sintered at a sintering temperature. Process.

After sintering, the element layer green body 41 forms the element layer 31 in the third figure (a), and the first suppression layer green body 431 and the second suppression layer green body 431 form the third layer (a), respectively. A suppression layer 331 and a second suppression layer 332. The element layer 31 and the first and second suppression layers 331, 332 are formed by a sintering process, and therefore may be referred to as a sintered element layer and a sintering suppression layer, respectively.

The element layer 31 formed at the sintering temperature of the element layer green body 41 has a first contraction amount, and the second suppression layer green body 432 is formed at the sintering temperature. The second suppression layer 332 has a second shrinkage amount (the first suppression layer green body 431 also has a shrinkage amount after sintering, which has the same effect as the second shrinkage amount, so only the second suppression layer green body 432 and the second shrinkage amount As a representative to explain).

In an embodiment, the component layer green body 41 further comprises a ceramic green body and an electrode green body. Since the ceramic green body and the electrode green body have different shrinkage rates after sintering, the ceramic layer and the electrode layer which are generated in the element layer after sintering will be discontinuous due to the difference in shrinkage rate of the electrode layer. phenomenon. In order to suppress the shrinkage ratio of the ceramic layer, the difference in shrinkage between the ceramic layer and the electrode layer is lowered, and the second shrinkage ratio of the second suppression layer green body 432 is smaller than the first shrinkage ratio of the element layer green body 41, so that The amount of shrinkage is less than the first amount of shrinkage, which in turn causes the portion of the component layer green body 41 that is in contact with the second suppression layer green body 432 to be inhibited by the shrinkage of the second suppression layer green body, thereby reducing its contact on the contact surface. The amount of shrinkage. Similarly, the suppression effect of the relatively outer element layer green body 41 is also transmitted inward to the inner element layer green body 41, resulting in an overall suppressing effect.

In an embodiment, since the second contraction amount is smaller than the first contraction amount, the plane of the element layer green body 41 in contact with the second suppression layer green body 432 during contraction is subjected to a contraction suppressing force. Since the entire plane is suppressed by the suppression force, the microstructure distribution of the entire plane is relatively uniform. Further, since the inner side of the element layer green body 41 is also affected by the shrinkage suppressing force, the microstructure distribution of the entire element layer 31 is made uniform. Since the electrical properties of the ceramic particles themselves are affected by the size of the particles, the uniform microstructure distribution can also make the electrical properties of the integral component layer 31 relatively fixed, and the electrical properties of the entire batch of electronic components are relatively similar. And have a higher yield.

In one embodiment, element layer 31 has a first onset sintering temperature and second suppression layer 332 has a second onset sintering temperature. The first starting sintering temperature The degree may be less than the second starting sintering temperature, so that the element layer green body 41 is first subjected to sintering shrinkage when the second suppression layer green body has not been shrunk. As a result, since the second suppression layer green body has not yet produced shrinkage, it is more resistant to the shrinkage phenomenon of the element layer green body 41, thereby enhancing the effect of suppressing shrinkage.

In an embodiment, the material of the first suppression layer green body 431 may also be a material that is less reactive with the carrier substrate 44, so that the element layer green body 41 can pass through the first suppression layer green body 431 during the sintering process. The barrier is avoided to avoid reaction with the carrier substrate 44. Even if a portion of the first suppression layer green body 431 reacts with the carrier substrate 44, since the specific electrical property of the electronic component 3 is dominated by the first electrical property of the component layer 31, the existence of the reaction does not Electrical effects.

Referring to FIG. 5, which is a manufacturing process of the electronic component of the present invention, the steps include: (S51) forming a sintered component layer having a first electrical property; (S52) forming a second electrical property on the sintered component layer. a sintering suppression layer; (S53) heating to a sintering temperature for sintering; and (S54) forming a terminal electrode on the same side surface of both the sintered device layer and the sintering suppression layer.

In step S51, an unsintered sintered element layer, that is, the element layer green body 41 shown in Fig. 4 is formed first. The unsintered sintered component layer has a first electrical property and a first shrinkage.

In step S52, an unsintered sintering suppression layer, that is, the suppression layer green bodies 431 and/or 432 shown in Fig. 4, is formed on the unsintered sintered element layer. The unsintered sintering suppression layer has a second electrical property and a second shrinkage. Wherein the material selection of the sintering suppression layer is such that the influence of the second electrical property on the electrical properties of the components of the overall electronic component is relatively small, and the electrical property of the component is dominated by the first electrical property. For example, if the electronic component is a resistor or an inductor, the first electrical property should be less than the second electrical property; if the electronic component is a capacitor, the second electrical property Should be less than the first electrical property.

In the step S53, the sintering element layer and the sintering suppression layer may have a first sintering shrinkage amount and a second sintering shrinkage amount respectively at the sintering temperature due to the influence of the respective sintering shrinkage rates during the sintering process. Therefore, the second sintering shrinkage amount should be controlled to be smaller than the first sintering shrinkage amount, whereby the sintering suppression layer can suppress the shrinkage phenomenon of the sintered component layer at the sintering temperature. Further, the sintering temperature should be greater than the first on-sintering temperature of the sintered component layer to ensure that the sintered component layer has undergone sintering shrinkage.

Since the sintering shrinkage layer itself may not undergo sintering shrinkage (that is, the second shrinkage amount is zero) as long as the second shrinkage amount of the sintering suppression layer is smaller than the first shrinkage amount of the sintered component layer, therefore, in an embodiment, The sintering temperature may be greater than the second initial sintering temperature of the sintering suppression layer; in another embodiment, the sintering temperature may also be less than the second starting sintering temperature. In still another embodiment, the second starting sintering temperature should be greater than the first starting sintering temperature to increase the effect of the sintering suppression layer on the shrinkage suppression of the sintered component layer.

In an embodiment of the present invention, the material selection of the suppression layer may be selected according to the state before the sintering, or may be selected according to the electrical relationship between the green layer of the suppression layer and the green body of the element layer. In another embodiment, the material selection of the suppression layer may be selected according to the state after sintering, or may be selected according to the electrical relationship between the suppression layer and the element layer. In still another embodiment, since the relative relationship between the unsintered suppression layer green body and the element layer green body and the electrical relationship between the sintered suppression layer and the element layer does not change, The raw material of the unsintered suppression layer or the material of the suppression layer after sintering is selected.

Please refer to the sixth figure, which takes the resistance as an example to compare the influence of different electrode depths on the resistance value in the presence or absence of the suppression layer. The curve 61 in the figure represents the resistance value of the resistor having no suppression layer at different electrode depths, Curve 62 in the figure represents the resistance value of the resistor having the suppression layer at different electrode depths in the present invention. It can be clearly seen from the figure that the curve 62 does not have much resistance change at different electrode depths, and the curve 61 will obviously decrease as the electrode depth increases. It can be seen that the resistor without the suppression layer reduces the distance between the electrodes due to the increase of the electrode depth, and reduces the resistance value of the electrode; in contrast, the resistor with the suppression layer has the distance between the electrodes and the resistance value. The influence is transferred to the suppression layer, and since the resistance value of the suppression layer is larger than the resistance value of the element layer, the influence of the distance between the electrodes on the overall resistance value is significantly affected by the suppression layer to the whole in the state in which the suppression layer is in parallel with the element layer. The resistance value has little effect, so that the curve 61 does not change drastically due to the increase in electrode depth.

Furthermore, since the electrode depth control is not easy, even if the electrode depth is set to 500 μm, the electrode depth of each of the manufactured resistors will have a certain difference. Taking the electrode depth of 500 μm as an example, the resistance value in the curve 61 is significantly changed sharply, and the resistance value of the curve 62 is relatively stable. It can be seen that since the electrode depth control is not easy, the difference in electrode depth between each resistor without the suppression layer will be directly expressed in the resistance value, and further, the particle size inside the element layer due to the absence of the suppression layer. Relatively non-uniform, the electrical properties of the element layer will also change abnormally; in contrast, the difference in electrode depth between each resistor having a suppression layer will be reflected in the resistance value through the suppression layer, while the suppression layer The resistance value is large, so that the influence of the electrode depth is relatively inconspicuous in the parallel state. Furthermore, the presence of the suppression layer also causes the particle size inside the element layer to be relatively uniform, so that the electrical properties of the element layer are not different.

Please refer to Table 1 on the next page. Take the resistance as an example to compare the difference in resistance between the presence or absence of the suppression layer. The experimental data in the table is a resistance value measured by randomly sampling 20 resistors of 5,000 resistors at room temperature of 25 °C. its The medium resistance 1 represents a resistor having no suppression layer, and the resistance second represents a resistor having a suppression layer.

From the above table, the maximum value of the resistor 1 (11280 Ω) is larger than the maximum value of the resistor 2 (11110 Ω), and the minimum value of the resistor 1 (9800 Ω) is smaller than the minimum value of the resistor 2 (10460 Ω). From this, it is understood that the resistance 1 of the resistor 1 having no suppression layer is significantly larger than the resistance 2 having the suppression layer. Please refer to the seventh figure, which is drawn from the data in Table 1 to indicate the distribution range of the resistance values. As is apparent from the figure, the resistor 2 having the suppression layer has a narrow distribution of resistance values and a high yield with respect to the resistor 1 having no suppression layer.

Example

What is claimed is: 1. An electronic component having a specific electrical property, comprising: a sintered component layer having a first electrical property; and a sintering inhibiting layer having a second electrical property and forming a layer with the sintered component layer a parallel state, wherein the second electrical property is such that the electronic component is in the parallel state, and the specific electrical system is dominated by the first electrical property.

2. The electronic component of embodiment 1, wherein the electrical component is a resistor, the specific electrical property, the first electrical property, and the second electrical property are resistance values, and the second electrical property is greater than the electrical component The first electrical property is such that the specific electrical property is dominated by the first electrical property.

3. The electronic component of any of embodiments 1-2, When the electronic component is a capacitor, the specific electrical property, the first electrical property, and the second electrical property are capacitance values, and the second electrical property is less than the first electrical property, so that the specific electrical property is The first electrical dominant.

4. The electronic component of any one of embodiments 1 to 3, wherein the specific electrical property, the first electrical property, and the second electrical property are both inductance values, and wherein the electrical component is an inductor, and The second electrical property is greater than the first electrical property such that the specific electrical property is dominated by the first electrical property.

5. The electronic component of any one of embodiments 1 to 4, wherein the sintered component layer and the sintering suppression layer respectively have a first shrinkage amount and a second shrinkage amount at a sintering temperature, and the The first shrinkage amount is greater than the second shrinkage amount such that the sintering suppression layer suppresses shrinkage of the sintered component layer at the sintering temperature.

6. The electronic component of any one of embodiments 1 to 5, wherein the sintered component layer has a first onset sintering temperature, the sintered suppression layer has a second onset sintering temperature, and the first onset sintering temperature Below the second starting sintering temperature.

7. The electronic component of any one of embodiments 1 to 6 further comprising: an end electrode located on the same side surface of both the element layer and the suppression layer.

8. An electronic component comprising: a component layer having a first electrical property and a first amount of sintering shrinkage; and a suppression layer having a second electrical property and a second sintering shrinkage amount and located On the component layer, if the electronic component is one of a resistor and an inductor, the first electrical property is less than the second electrical property, and if the electronic component is a capacitor, the first electrical property is greater than the Second electrical.

9. The electronic component of embodiment 8, wherein the component layer has a first At the beginning of the sintering temperature, the suppression layer has a second onset sintering temperature, and the first onset sintering temperature is lower than the second onset sintering temperature.

10. The electronic component according to any one of embodiments 8 to 9 further comprising: an end electrode located on the same side surface of both the element layer and the suppression layer.

11. The electronic component of any one of embodiments 8 to 10, wherein the first amount of sintering shrinkage and the second amount of sintering shrinkage are shrinkage of the component layer and the suppression layer at a sintering temperature, respectively. the amount.

12. The electronic component of any one of embodiments 8-11, wherein the first amount of sintering shrinkage is greater than the second amount of sintering shrinkage.

A method of manufacturing an electronic component, the method comprising: forming a sintering suppression layer having a second electrical property on a layer of a sintered component having a first electrical property, wherein the electronic component is a resistor Or the first electrical property is less than the second electrical property, and if the electronic component is a capacitor, the first electrical property is greater than the second electrical property; and the sintered component layer and the sintering The suppression layer is sintered together at a sintering temperature.

14. The method of the method of embodiment 13 further comprising: forming an end electrode on the same side surface of both the sintered suppression layer and the sintered element layer after sintering.

15. The method of any one of embodiments 13 to 14, wherein the first amount of sintering shrinkage and the second amount of sintering shrinkage are respectively generated by the sintered element layer and the sintering inhibiting layer at the sintering temperature. The amount of contraction.

16. The method of any one of embodiments 13 to 15, wherein the sintered element layer has a first onset sintering temperature, the sintering suppression layer has a second onset sintering temperature, and the first onset sintering temperature Below the second starting sintering temperature.

17. The method of any one of embodiments 13-16, wherein the sintering temperature is greater than the first onset sintering temperature.

18. The method of any one of embodiments 13-17, wherein the sintering temperature is greater than the second starting sintering temperature.

19. The method of any one of embodiments 13 to 18, wherein the sintering element layer and the sintering suppression layer respectively have a first shrinkage amount and a second shrinkage amount at the sintering temperature, and the first The amount of contraction is less than the first amount of contraction such that the sintering suppression layer suppresses shrinkage of the layer of the sintered element at the sintering temperature.

20. An electronic component having an electrical component comprising: a sintered component layer having a first electrical property; and a sintering inhibiting layer having a second electrical property and a second electrical property The electrical properties of the component are caused to be dominated by the first electrical property.

The embodiments described above are merely illustrative for convenience of description and are not intended to limit the invention. Therefore, those skilled in the art can make modifications and changes to the above embodiments without departing from the spirit and scope of the invention.

1‧‧‧Laminated ceramic components

11‧‧‧Multilayer ceramic layer

12,32‧‧‧ terminal electrode

d ₁₂₁ ,d ₃₂₁ ‧‧‧electrode depth

d ₁₂₂ ,d ₃₂₂ ‧‧‧electrode distance

21‧‧‧Laminated ceramic green body

24‧‧‧bearing ceramic substrate

3‧‧‧Electronic components

31‧‧‧Component layer

331‧‧‧First suppression layer

332‧‧‧second suppression layer

4‧‧‧Electronic component blanks

41‧‧‧Component layer green body

431‧‧‧First suppression layer green body

432‧‧‧Second suppression layer green body

44‧‧‧Loading substrate

S51-S54‧‧‧Steps

The first figure is a schematic diagram of the current laminated ceramic component; the second figure is a schematic diagram of the sintering method of the current laminated ceramic component; the third figure (a) is a schematic view of the electronic component of the present invention; the third figure (b) is The electrical connection diagram between the various components in the electronic component of the invention; the fourth figure is an illustration of the green component green body of the invention under the sintering process Figure 5 is a flow chart showing the manufacturing process of the electronic component of the present invention; the sixth figure is a data chart of the resistance value of the resistor having the suppression layer at different electrode depths; and the seventh figure is the resistance of the resistor having the suppression layer. Value data graph.

3‧‧‧Electronic components

31‧‧‧Component layer

32‧‧‧ terminal electrode

331‧‧‧First suppression layer

332‧‧‧second suppression layer

d ₃₂₁ ‧‧‧electrode depth

d ₃₂₂ ‧‧‧electrode distance

Claims (12)

An electronic component comprising: a sintered component layer having a first electrical property, an upper surface and a lower surface; a first sintering suppression layer having a second electrical property and covering the upper surface; a second sintering suppression layer having a third electrical property and covering the lower surface, wherein the first sintering suppression layer, the second sintering suppression layer and the sintered element layer form a parallel state; and an end electrode, The same side surface of the sintered element layer, the first sintering suppression layer and the second sintering suppression layer; wherein the electronic component has a fourth electrical property, and the fourth electrical property and the second electrical property The difference between the fourth electrical property and the third electrical property is greater than a difference between the fourth electrical property and the first electrical property, wherein the first electrical property, the second electrical property, the first electrical property The third electrical property and the fourth electrical property are resistance values, inductance values, or capacitance values. The electronic component of claim 1, wherein the electronic component is a resistor, and the first electrical property, the second electrical property, the third electrical property, and the fourth electrical property are resistance values. And the second electrical property is greater than the first electrical property such that the specific electrical property is dominated by the first electrical property. The electronic component of claim 1, wherein the electronic component is an inductor, and the first electrical property, the second electrical property, the third electrical property, and the fourth electrical property are inductance values, And the second electrical property is greater than the first electrical property such that The specific electrical property is dominated by the first electrical property. The electronic component of claim 1, wherein the electronic component is a capacitor, and the first electrical property, the second electrical property, the third electrical property, and the fourth electrical property are capacitance values, and The second electrical property is less than the first electrical property such that the specific electrical property is dominated by the first electrical property. The electronic component of claim 1, wherein the sintered component layer, the first sintering suppression layer, and the second sintering suppression layer respectively have a first shrinkage amount and a second shrinkage at a sintering temperature. And a third shrinkage amount, wherein the first shrinkage amount is greater than the second shrinkage amount and the third shrinkage amount, so that the first sintering suppression layer and the second sintering suppression layer suppress the sintering at the sintering temperature Shrinkage of the component layer. An electronic component comprising: a component layer having a first electrical property and a first amount of sintering shrinkage; a first suppression layer having a second electrical property and a second sintering shrinkage amount and covering a surface of the element layer; and a second suppression layer having a third electrical property and a third sintering shrinkage amount and covering the lower surface of the component layer; wherein the first sintering shrinkage amount, the The second sintering shrinkage amount and the third sintering shrinkage amount are respectively the shrinkage amount of the element layer, the first suppression layer, and the second suppression layer at a sintering temperature, and the second sintering shrinkage amount and the first The third sintering shrinkage amount is less than the first sintering shrinkage amount, so that the first suppression layer and the second suppression layer suppress the shrinkage of the element layer at the sintering temperature; wherein the electronic component is a resistor and an inductor one of them, The first electrical property is less than the second electrical property and the third electrical property, and if the electronic component is a capacitor, the first electrical property is greater than the second electrical property and the third electrical property, wherein the first electrical property The second electrical property and the third electrical property are resistance values, inductance values, or capacitance values. The electronic component of claim 6, further comprising: an end electrode located on the same side surface of the element layer, the first suppression layer and the second suppression layer. The electronic component according to claim 6, wherein the first sintering shrinkage amount, the second sintering shrinkage amount, and the third sintering shrinkage amount are the component layer, the first suppression layer, and the second suppression, respectively. The amount of shrinkage produced by the layer at a sintering temperature. A method of manufacturing an electronic component, comprising: forming a first sintering suppression layer having a second electrical property on a surface of a sintered component layer having a first electrical property; forming a lower surface of the sintered component layer a second sintering suppression layer having a third electrical property; wherein if the electronic component is a resistor or an inductor, the first electrical property is less than the second electrical property and the third electrical property, and if When the electronic component is a capacitor, the first electrical property is greater than the second electrical property and the third electrical property, wherein the first electrical property, the second electrical property, and the third electrical property are both resistance values and inductance values. Or a capacitance value; and sintering the sintered element layer, the first sintering suppression layer, and the second sintering suppression layer together at a sintering temperature. The method of claim 9, further comprising forming an end electrode on the same side surface of the sintered first sintering suppression layer, the second sintering suppression layer, and the sintered element layer. The method of claim 9, wherein the sintered element layer has a first onset sintering temperature, the first sintering suppression layer has a second onset sintering temperature, and the second sintering suppression layer has a third start a sintering temperature, and the first starting sintering temperature is lower than the second starting sintering temperature and the third starting sintering temperature. The method of claim 10, wherein the sintering element layer, the first sintering suppression layer, and the second sintering suppression layer respectively have a first shrinkage amount, a second shrinkage amount, and a third shrinkage amount, and the second shrinkage amount and the third shrinkage amount are smaller than the first shrinkage amount, so that the first sintering suppression layer and the second sintering suppression layer suppress the sintering element layer at the sintering temperature Contraction.