TWI506162B - 沉積包封膜之方法 - Google Patents

沉積包封膜之方法 Download PDF

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Publication number
TWI506162B
TWI506162B TW102105487A TW102105487A TWI506162B TW I506162 B TWI506162 B TW I506162B TW 102105487 A TW102105487 A TW 102105487A TW 102105487 A TW102105487 A TW 102105487A TW I506162 B TWI506162 B TW I506162B
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TW
Taiwan
Prior art keywords
gas
substrate
layer
nitrogen
gas mixture
Prior art date
Application number
TW102105487A
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English (en)
Chinese (zh)
Other versions
TW201341580A (zh
Inventor
陳志堅
元泰景
範洙 朴
崔永鎭
崔壽永
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201341580A publication Critical patent/TW201341580A/zh
Application granted granted Critical
Publication of TWI506162B publication Critical patent/TWI506162B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW102105487A 2012-02-15 2013-02-18 沉積包封膜之方法 TWI506162B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261599364P 2012-02-15 2012-02-15

Publications (2)

Publication Number Publication Date
TW201341580A TW201341580A (zh) 2013-10-16
TWI506162B true TWI506162B (zh) 2015-11-01

Family

ID=48945906

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102105487A TWI506162B (zh) 2012-02-15 2013-02-18 沉積包封膜之方法

Country Status (6)

Country Link
US (1) US8901015B2 (https=)
JP (1) JP6082032B2 (https=)
KR (1) KR101539635B1 (https=)
CN (1) CN104115300B (https=)
TW (1) TWI506162B (https=)
WO (1) WO2013123431A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838003B (zh) * 2017-02-17 2024-04-01 美商蘭姆研究公司 半導體裝置製造中之氧化錫膜

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101842586B1 (ko) * 2011-04-05 2018-03-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US9299956B2 (en) * 2012-06-13 2016-03-29 Aixtron, Inc. Method for deposition of high-performance coatings and encapsulated electronic devices
WO2014134714A2 (en) 2013-03-07 2014-09-12 Switch Materials Inc. Seal and seal system for a layered device
KR102036327B1 (ko) * 2013-03-27 2019-11-27 삼성디스플레이 주식회사 유기발광장치 및 그 제조방법
WO2015089663A1 (en) * 2013-12-19 2015-06-25 Switch Materials Inc. Switchable objects and methods of manufacture
WO2015174318A1 (ja) 2014-05-16 2015-11-19 シャープ株式会社 封止フィルム、有機ｅｌ素子、及び有機ｅｌ表示装置
TWI545827B (zh) * 2014-05-23 2016-08-11 群創光電股份有限公司 有機發光二極體顯示面板
KR20160036722A (ko) 2014-09-25 2016-04-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6584162B2 (ja) * 2015-06-22 2019-10-02 東京エレクトロン株式会社 積層封止膜形成方法および形成装置
US10163859B2 (en) 2015-10-21 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method for chip package
US11751426B2 (en) * 2016-10-18 2023-09-05 Universal Display Corporation Hybrid thin film permeation barrier and method of making the same
US20190097175A1 (en) * 2017-09-28 2019-03-28 Applied Materials, Inc. Thin film encapsulation scattering layer by pecvd
US10957543B2 (en) 2017-09-29 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Device and method of dielectric layer
JP7407121B2 (ja) * 2018-04-09 2023-12-28 アプライド マテリアルズ インコーポレイテッド パターニング用途のためのカーボンハードマスク及び関連方法
WO2019212799A1 (en) 2018-05-03 2019-11-07 Applied Materials, Inc. Rf grounding configuration for pedestals
US11180847B2 (en) * 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
CN113841263B (zh) * 2019-04-25 2024-04-26 应用材料公司 具有低折射率和低水蒸气穿透率的湿气阻挡膜
KR102808971B1 (ko) * 2019-09-10 2025-05-16 어플라이드 머티어리얼스, 인코포레이티드 디스플레이 캡슐화 애플리케이션을 위한 고밀도 플라즈마 cvd
CN111029479A (zh) * 2019-11-13 2020-04-17 武汉华星光电半导体显示技术有限公司 显示面板、显示装置以及显示面板的制造方法
KR102882467B1 (ko) * 2020-01-16 2025-11-05 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
US11538677B2 (en) * 2020-09-01 2022-12-27 Applied Materials, Inc. Systems and methods for depositing high density and high tensile stress films
CN116964740A (zh) * 2021-02-22 2023-10-27 应用材料公司 用于固化印刷在基板上的油墨的设备、系统和方法
TWI782762B (zh) * 2021-10-21 2022-11-01 天虹科技股份有限公司 擴散機構及應用該擴散機構的薄膜沉積機台
TWI843325B (zh) * 2022-12-09 2024-05-21 元太科技工業股份有限公司 顯示裝置及其製作方法
KR20240123479A (ko) * 2023-02-06 2024-08-14 삼성디스플레이 주식회사 표시 패널 및 이의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901493A (en) * 2007-04-12 2009-01-01 Applied Materials Inc Silicon nitride passivation for a solar cell

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US6743524B2 (en) 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
CN1259710C (zh) 2002-09-11 2006-06-14 联华电子股份有限公司 在低介电材料层与内连线间形成阻障层的方法
US7086918B2 (en) * 2002-12-11 2006-08-08 Applied Materials, Inc. Low temperature process for passivation applications
JP5848862B2 (ja) * 2004-06-25 2016-01-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ カプセル化膜の遮水性能の改善
US7220687B2 (en) * 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
JP2007030387A (ja) * 2005-07-28 2007-02-08 Fujifilm Corp バリア性フィルム基板およびそれを用いた有機電界発光素子
US20080006819A1 (en) 2006-06-19 2008-01-10 3M Innovative Properties Company Moisture barrier coatings for organic light emitting diode devices
JP2009221541A (ja) * 2008-03-17 2009-10-01 Fujifilm Corp 無機層の真空成膜法、バリア性積層体、デバイスおよび光学部材
KR20100087514A (ko) 2009-01-28 2010-08-05 한국산업기술대학교산학협력단 유기 전기 발광 다이오드의 제조장치 및 제조방법
KR101097321B1 (ko) 2009-12-14 2011-12-23 삼성모바일디스플레이주식회사 유기 발광 장치 및 이의 제조 방법
KR101106173B1 (ko) 2010-06-16 2012-01-20 한국기계연구원 유기태양전지용 다층박막봉지 및 이의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200901493A (en) * 2007-04-12 2009-01-01 Applied Materials Inc Silicon nitride passivation for a solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI838003B (zh) * 2017-02-17 2024-04-01 美商蘭姆研究公司 半導體裝置製造中之氧化錫膜

Also Published As

Publication number Publication date
US20130210199A1 (en) 2013-08-15
KR101539635B1 (ko) 2015-07-27
CN104115300B (zh) 2017-02-22
TW201341580A (zh) 2013-10-16
JP2015513609A (ja) 2015-05-14
JP6082032B2 (ja) 2017-02-15
WO2013123431A1 (en) 2013-08-22
CN104115300A (zh) 2014-10-22
KR20140129075A (ko) 2014-11-06
US8901015B2 (en) 2014-12-02

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