TWI505488B - 用於太陽能集中器之多點冷卻系統 - Google Patents

用於太陽能集中器之多點冷卻系統 Download PDF

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TWI505488B
TWI505488B TW100100284A TW100100284A TWI505488B TW I505488 B TWI505488 B TW I505488B TW 100100284 A TW100100284 A TW 100100284A TW 100100284 A TW100100284 A TW 100100284A TW I505488 B TWI505488 B TW I505488B
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solar
heat
heat exchange
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Supratik Guha
Yves C Martin
Robert L Sandstrom
Theodore G Van Kessel
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S23/00—Arrangements for concentrating solar-rays for solar heat collectors
    • F24S23/30—Arrangements for concentrating solar-rays for solar heat collectors with lenses
    • F24S23/31—Arrangements for concentrating solar-rays for solar heat collectors with lenses having discontinuous faces, e.g. Fresnel lenses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
    • F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H01L31/0521—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells using a gaseous or a liquid coolant, e.g. air flow ventilation, water circulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24S—SOLAR HEAT COLLECTORS; SOLAR HEAT SYSTEMS
    • F24S25/00—Arrangement of stationary mountings or supports for solar heat collector modules
    • F24S2025/01—Special support components; Methods of use
    • F24S2025/011—Arrangements for mounting elements inside solar collectors; Spacers inside solar collectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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Description

用於太陽能集中器之多點冷卻系統
本發明有關於一種太陽能集中器(solar concentrator)，更明確地說，有關於一種用於太陽能集中器之多點冷卻系統(multi-point cooling system)。
太陽能發電系統(solar power system)一般分為兩類：固定位置的平板系統(fixed position flat panel system)，以及追蹤聚光器系統(tracking concentrator system)。固定位置的平板系統採用一個或多個固定的面板，其配置在具有陽光不受阻隔的區域。由於地球自轉，太陽射線依地理位置、一天中的時刻以及一年中的時間以不同程度的強度在該(等)固定面板上移動。相反的，太陽聚光器系統收集，並集中太陽射線到一個或多個太陽能電池上。某些太陽聚光系統採用追蹤系統，其等跟隨著太陽的路徑以提高能量的收集。簡單地說，固定位置的平板系統代表為一種被動式太陽能收集系統(passive solar collection system)，而太陽能集中器系統代表一種更主動的能源收集系統(active energy collection system)。
利用光伏打電池(photovoltaic cell)的太陽能集中器系統通常在或低於約500太陽光強度(suns)之聚光度(concentration)下運作。在較高太陽光強度聚光程度下運作會造成冷卻的挑戰。目前，太陽能集中器冷卻系統是大型笨重的系統及/或具有有限的冷卻能力(cooling capacity)。因此，限制太陽能集中器系統的主要限制是適當地冷卻光伏打電池的能力。
根據一示例性具體實施例，一種太陽能集中器包含一具有焦點(focal point)的光學部件(optical member)，該光學部件被配置及佈置以將入射的太陽輻射導向該焦點。一支撐部件(support member)被定位於鄰近該光學部件的焦點。一太陽能收集器(solar energy collector)被支撐於該支撐部件上，該太陽能收集器係定位於光學部件的焦點處。一基底部件(base member)被定位以與支撐部件保持間隔關係(spaced relationship)，該基底部件與支撐部件界定一個與太陽能收集器具熱交換關係(heat exchange relationship)的隔室區(chamber section)，該隔室區被配置以吸收及消散來自太陽能收集器的熱。
根據另一示例性具體實施例，一種冷卻太陽能收集器的方法包含將來自太陽能收集器的熱吸收到隔室區中，該隔室區以熱交換關係配置在太陽能收集器的下方。
附加特徵及優勢透過本發明的技術實現。本發明之其他具體實施例及態樣在此處詳細描述並視為所主張之本發明的一部分。為更能理解本發明的優點及特徵，參考實施方式及圖示。
參照圖1，根據一示例性具體實施例建立之一種太陽能集中器一般標示為2。太陽能集中器2包含一光學部件或透鏡(lens)4，其具有複數個焦點6-8。複數個太陽能收集器10-12定位於每一各別的焦點6-8處。以此配置，穿透光學部件4之入射的太陽輻射被導引至焦點6-8並延伸導至太陽能收集器10-12上。太陽能收集器10-12轉換太陽能成電能。正如以下將更全面的討論，太陽能收集器10-12採取三接面光伏打聚光器電池(triple-junction photovoltaic concentrator cell)的形式，其在高太陽能聚光度(solar concentrations)下運作，例如大於50 W/cm2 之聚光度(約500太陽光強度(suns))。根據該示例性具體實施例之一態樣，太陽能收集器10-12可在聚光程度高達200 W/cm2 (約2000太陽光強度)或更高下運作。如此，太陽能集中器2需要冷卻系統，其吸收及消散產生於在此等聚光程度運作之太陽能收集器10-12的熱。在此點應當理解雖然只有顯示三個太陽能收集器，太陽能集中器2可以包含更多的太陽能收集器而沒有偏離申請專利範圍的範疇。
根據一示例性具體實施例，太陽能收集器10-12被安裝於多點冷卻系統14。更明確地說，太陽能收集器10-12被安裝於由具有高散熱係數(heat dissipation coefficient)之金屬或陶瓷材料所形成的支撐部件16。根據示例性具體實施例之一態樣，支撐部件16由氮化鋁(AlN)、氧化鋁(Al2 O3 )、鎳以及銅中之一種或多種所形成。太陽能收集器10-12經由對應的複數個熱介面部件(thermal interface member)17-19而安裝於支撐部件16。該示例性具體實施例顯示，一絕緣層20安裝於太陽能收集器10-12附近之支撐部件16上。電連接(electrical connection)23-25從各別的太陽能收集器10-12沿著絕緣層20延伸。電連接23-25導引至一能源儲存裝置(energy storage device)(未顯示)。
進一步根據該示例性具體實施例，多點冷卻系統14包含基底部件36。支撐部件16透過周邊牆(peripheral wall)40安裝在基底部件36上。在類似於上述之方式中，基底部件36由具有高熱擴散係數(heat diffusion coefficient)之金屬或陶瓷材料所形成。基底部件36與支撐部件16間隔以界定隔室區44。根據本發明之一態樣，隔室區44以例如水或氨形成的蒸汽所填滿，其促進消散來自太陽能收集器10-12的熱。基底部件36也透過複數個結構支撐(structural support)47-50耦合至支撐部件16。每個結構支撐47-50以芯吸材料(wicking material)52-55所覆蓋。根據示例性具體實施例之一態樣，芯吸材料52-55由燒結銅粒(sintered copper particle)或具有加工過溝槽(machined groove)之材料所形成。芯吸材料52-55促進熱由太陽能收集器10-12到隔室區44的傳輸。為了進一步促進熱的傳輸，安裝複數個核膜(nucleation membrane)59-61在隔室區44內之支撐部件16上。每個核膜59-61經定位鄰近於太陽能收集器10-12之對應一者。根據示例性具體實施例之一態樣，核膜59-61由配置在以銅或鋁形成之主體(body)裡的燒結銅粒所形成。以此配置，蒸汽行進於芯吸材料52-55及/或核膜59-61。來自蒸汽之熱係例如經由基底部件36而消散，其形成一個回到隔室區44的冷凝物(condensate)。
為了便於熱能自隔室區44轉移，太陽能集中器2包含了複數個安裝在基底部件36上的冷卻片(cooling fin)66。冷卻片66自隔室區44轉移熱能，其經由通過基底部件36的氣流而消散。根據本發明之一態樣，複數個延伸經過隔室區44的導管(conduit)71-73進一步促進熱能消散。導管71-73經配置及佈置以吸收來自隔室區44的熱能。根據本具體實施例之本發明的一態樣，導管71-73充滿了一種在隔室區44內循環的液體。該液體吸收傳遞到例如冷卻介質(cooling medium)的熱能，其後該液體經再循環回到隔室區44。
現參考圖2，其中相似參照數字代表在各自使用中的對應部位，其描述該示例性具體實施例的另一態樣。根據所示之該具體實施例，太陽能集中器2包含安裝於基底部件36上的帶鰭冷卻板(finned cold plate)86。更明確地說，帶鰭冷卻板86包含主體88，其具有第一實質上平坦表面90以及相對的第二實質上平坦表面91。第一實質上平坦表面90提供有複數個以類似於上述方式消散熱能的冷卻片95。第二實質上平坦表面91透過熱介面部件98附於基底部件36。熱介面部件98促進能量自基底部件36轉移到帶鰭冷卻板86。根據示例性具體實施例之一態樣，冷卻板86由銅、鋁或是高散熱係數陶瓷材料中之一者形成。
在此點，應當理解該等示例性具體實施例提供了一種自太陽能集中器移除熱能的系統。也就是說，本示例性具體實施例使得一太陽能集中器可以在超過2000太陽光強度下運作同時保持冷卻。即，相較於必須運作在實質上低於2000太陽光強度的現存系統，該等示例性具體實施例提供充份的冷卻使太陽能集中器能運作在更高的太陽能聚光程度以促進能量轉換。
此處所使用的術語僅以描述特殊具體實施例為目的而不是為本發明設限。本文中所使用單數形式的「一」、「一個」及「該」意欲包含複數形式，除非內容清楚地另有所指。在此將進一步了解使用於此說明書的術語「包含」及/或「包括」具體指出所陳述之特徵、整數、步驟、操作、元件及/或組件的存在，但其中並不排除存在或增設一或多個的其他特徵、整數、步驟、操作、元件組件及/或群組。
儘管已描述本發明較佳之具體實施例，應理解熟習本技術者可在現在及未來於隨後的申請專利範圍的範疇之內進行各種改進和增強。此等申請專利範圍應該被解釋為對第一個發表的本發明維持適當的保護。
2．．．太陽能集中器
4．．．光學部件或透鏡
6-8．．．焦點
10-12．．．太陽能收集器
14．．．多點冷卻系統
16．．．支撐部件
17-19．．．熱介面部件
20．．．絕緣層
23-25．．．電連接
36．．．基底部件
40．．．周邊牆
44．．．隔室區
47-50．．．結構支撐
52-55．．．芯吸材料
59-61．．．核膜
66．．．冷卻片
71-74．．．導管
86．．．帶鰭冷卻板
88．．．主體
90．．．第一實質上平坦表面
91．．．第二實質上平坦表面
95．．．冷卻片
98．．．熱介面部件
視為本發明之標的係在本說明書之結論處的申請專利範圍中特別指出以及明確地主張。本發明之前述及其他特徵和優勢從以上的實施方式聯同隨附圖式是顯而易見的，其中：
圖1是一種根據一示例性具體實施例的太陽能集中器的示意平面圖，其包含多點冷卻系統；及
圖2是一種根據該示例性具體實施例之另一態樣的太陽能集中器的示意平面圖，其包含多點冷卻系統。
2．．．太陽能集中器
4．．．光學部件或透鏡
6-8．．．焦點
10-12．．．太陽能收集器
14．．．多點冷卻系統
16．．．支撐部件
17-19．．．熱介面部件
20．．．絕緣層
23-25．．．電連接
36．．．基底部件
40．．．周邊牆
44．．．隔室區
47-50．．．結構支撐
52-55．．．芯吸材料
59-61．．．核膜
66．．．冷卻片
71-74．．．導管

Claims (14)

  1. 一種太陽能集中器，其包括：一具有一焦點之光學部件，該光學部件被配置及佈置以將入射的太陽輻射導向該焦點；一支撐部件，其被定位鄰近於該光學部件的該焦點；一太陽能收集器，其被支撐於該支撐部件上，該太陽能收集器被定位於該光學部件的該焦點上；一基底部件，其被定位以與該支撐部件保持間隔關係，該基底部件與該支撐部件界定一個與該太陽能收集器具熱交換關係的隔室區，該隔室區被配置以吸收及消散來自該太陽能收集器的熱；複數個延伸通過該隔室區的導管，其於該隔室區內直接接觸該基底部件之一表面，其中該複數個導管吸收來自該隔室區所接收自該太陽能收集器的熱，該複數個導管傳送一通過該隔室區的熱交換介質(heat exchange medium)以與該隔室區內的一工作流體具熱交換關係；以及一或多個核膜，其於該隔室區內被配置於該複數個導管之一或多個以及該支撐部件之一表面之間，且直接接觸該複數個導管之一或多個以及該支撐部件之該表面，其中該複數個導管僅經由該一或多個核膜之對應一者而與該支撐部件之該表面具熱交換關係。
  2. 如申請專利範圍第1項之太陽能集中器，其進一步包括：一定位於該太陽能收集器與該支撐部件間的熱介面部件。
  3. 如申請專利範圍第1項之太陽能集中器，其中該隔室區包 括一蒸汽隔室(vapor chamber)。
  4. 如申請專利範圍第3項之太陽能集中器，其進一步包括：一於該隔室區內延伸於該支撐部件與該基底部件之間的支撐元件。
  5. 如申請專利範圍第4項之太陽能集中器，其中該支撐元件由芯吸材料形成，該支撐元件促進在該太陽能收集器與該隔室區之間的熱能轉移。
  6. 如申請專利範圍第1項之太陽能集中器，其進一步包括：複數個安裝在該基底部件之一外部表面的散熱片(heat dissipating fin)。
  7. 如申請專利範圍第1項之太陽能集中器，其中該熱交換介質係一液體。
  8. 如申請專利範圍第1項之太陽能集中器，其進一步包括：一安裝於該基底部件的帶鰭冷卻板。
  9. 如申請專利範圍第8項之太陽能集中器，其進一步包括：一定位於該帶鰭冷卻板與該基底部件之間的熱介面材料。
  10. 一種冷卻太陽能集中器的方法，該方法包括：吸收從一太陽能收集器進入一隔室區的熱，該隔室區由一 基底部件以及一與該基底部件間隔的支撐部件所界定，該隔室區以熱交換關係配置於該太陽能收集器的下方，僅經由一或多個核膜而將熱導進，其中該一或多個核膜配置於該隔室區內而與複數個導管具直接的熱交換關係，該複數個導管含有一熱交換介質且延伸通過該隔室區而直接接觸該基底部件之一表面；將該熱的一部分吸收至該複數個導管；將該熱的另一部分吸收至配置於該隔室區內的芯吸材料，該芯吸材料緊靠該基底部件與該支撐部件；以及傳送該熱交換介質以與該隔室區內的一工作流體具熱交換關係。
  11. 如申請專利範圍第10項之方法，其進一步包括：將該熱導進一形成該熱交換介質且流經該複數個導管的流體。
  12. 如申請專利範圍第10項之方法，其進一步包括：將該熱由該太陽能收集器經由一熱介面部件導向該隔室區。
  13. 如申請專利範圍第10項之方法，其進一步包括：將該熱吸收至存在於該隔室區內的一蒸汽。
  14. 如申請專利範圍第13項之方法，其進一步包括：將該熱由該太陽能收集器經由該一或多個核膜導進該蒸汽。
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