TWI505375B - 自我對準沉積之場效電晶體通道之閘極的磊晶源/汲接觸 - Google Patents
自我對準沉積之場效電晶體通道之閘極的磊晶源/汲接觸 Download PDFInfo
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Description
本發明之諸方面有關自我對準運用奈米碳管之場效電晶體(CNTFET)之閘極的磊晶源/汲接觸。
運用奈米碳管(CNT)的開關裝置由於CNT的薄主體造成的高載子移動率及良好短通道效應而具有極大的潛力。例如,CNTFET已被提出作為密集邏輯應用的潛在後矽互補金氧半導體(CMOS)解決方案。為了能夠實現此潛力,必須使用以密集間距(pitch)建立CNTFET的方法。理想CNTFET的高移動率能夠使寬度尺度縮小(scaling),及理想CNTFET的良好短通道效應能夠使閘極長度尺度縮小。然而,運用CNTFET的技術所必須克服的許多額外挑戰之一是,與目前為傳統矽CMOS技術所支援之高佈線密度的相容性。尤其,為了高佈線密度佈局之故,必須精確定位圍繞每個CNT建立之開關裝置的源/汲極及閘極接觸。
閘極間距尺度縮小需要使用其中源/汲極自我對準閘極的可製造裝置結構。此種自我對準可消除由源/汲極與閘極的欠對準(misalignment)所引起的寄生電阻及電容變化性,且其亦可消除必須包括用於佈局中欠對準之餘裕的面積損失。在矽CMOS中,藉由使用閘極遮蔽界定植入接面輪廓及利用自我對準矽化製程,可實現此精確定位。對於CNTFET,這些方法通常不可行。
已使用方向性蒸發(directional evaporation)、化學摻雜及靜電摻雜展示具有自我對準閘極之源/汲接觸的CNTFET(SA CNTFET)。然而,在每個製程中,問題還是存在。例如,方向性蒸發的製程窗口對於可製造性過於狹窄,CNT源/汲接觸的化學摻雜仍屬積極研究中的領域但其成果仍無法再現且又不一致,及靜電摻雜進行得相當不錯但因靜電摻雜所需的後閘極需要額外佈局面積並引起較大寄生電容而不理想。
根據本發明之一方面,提供一種形成自我對準裝置的方法,包括:沈積奈米碳管(CNT)於一結晶介電基板上;隔離包圍該等CNT之位置之該結晶介電基板的一部分;形成閘極介電質及閘極電極閘極堆疊於該等CNT上並維持其結構完整性;及形成與在該結晶介電基板上自該等閘極介電質及閘極電極閘極堆疊暴露之該等CNT的部分接觸的磊晶源/汲區。
根據本發明之另一方面,提供一種形成自我對準磊晶源/汲接觸的製程,包括:沈積奈米碳管(CNT)於一結晶介電底層上;利用一硬光罩遮蔽場區;用一在該等CNT頂部上的硬光罩圖案化一閘極堆疊;用間隔物包封該閘極堆疊;及磊晶生長鄰接該等間隔物的源/汲區以提供自我對準源/汲極。
根據本發明之一方面,提供一種自我對準裝置,包括:複數個奈米碳管(CNT),其佈置於一結晶介電基板上;一場光罩,其佈置於該結晶介電基板上作為該等CNT的一矩形平面圍蔽;複數個絕緣閘極堆疊,其形成於該等CNT上且維持其結構完整性;及磊晶源/汲區,其設置與為該等絕緣閘極堆疊所暴露之該等CNT的部分接觸。
本文揭示的自我對準磊晶源/汲接觸製程提供從沈積的奈米結構(諸如奈米碳管或半導體奈米線)建立自我對準裝置的方案。假設奈米結構已經沈積在絕緣結晶底層(諸如氧化鏑釔(LaYO))上。場區以硬光罩遮蔽,在奈米結構頂部用硬光罩圖案化閘極堆疊,及接著用間隔物包封閘極堆疊。非絕緣材料,諸如矽,接著磊晶生長於源/汲區中以提供自我對準源/汲極。
參考圖1,提供矽基板10,且其具有其上佈置一層結晶介電質20的頂面。結晶介電質20可包括LaYO或某個其他相似的結晶介電質,其上可播種矽磊晶的晶種並可磊晶生長矽。此處,特別使用LaYO作為結晶介電質20以促使矽磊晶生長,因為已知矽磊晶的結晶結構實質上相似於LaYO的結晶結構,其相似程度致使即使沒有矽或矽鍺次結構,也能進行矽磊晶生長。
複數個奈米結構,諸如奈米碳管(CNT) 30或奈米線,係沈積於表面21上,諸如結晶介電質20的頂面。CNT 30實質上互相對準及實質上互相平行而沈積,但這並非必要。CNT 30沈積可根據各種已知方法完成,且因此省略其說明。
現在參考圖2,為了隔離包圍CNT 30之位置之結晶介電質20的部分,將包括二氧化矽(SiO2
)或某個其他相似材料的場光罩40放在結晶介電質20上作為CNT 30的實質上矩形平面圍蔽。以此方式,場光罩可包括形成圍繞CNT 30之周圍的邊緣41。當然,應明白,可以各種形狀及大小形成場光罩40,只要CNT 30視需要針對特定應用而被隔離,及圖2所示矩形形狀僅為例示性。
作為使用場光罩40的替代選項,亦可藉由蝕刻圍繞CNT 30的結晶介電質20以形成溝槽,隔離包圍CNT 30之位置之結晶介電質20的部分。接著使溝槽及/或基板10的暴露表面氧化。
參考圖3及圖4,將閘極介電質及閘極電極閘極堆疊50圖案化於CNT 30、結晶介電質20及場光罩40上。閘極堆疊50實質上互相平行及實質上垂直於CNT 30的定向,但這並非必要。閘極堆疊50可以各種配置由各種材料形成,各種配置諸如一層閘極介電質51(如,氧化鉿(HfO2
))、一層閘極堆疊材料52(如,氮化鈦(TiN),或鎢(W))及一次級層的閘極光罩材料53(如,氮化矽(SiN))。
在不會損壞CNT 30之結構完整性的情況下完成圖案化。例如,閘極介電質51可利用原子層沈積(ALD)加以沈積,尤其可利用預期不會損壞CNT 30的旋塗沈積加以沈積。閘極堆疊50由次級層的閘極光罩材料53進行絕緣。接著使用微影界定閘極,及使用例如計時以終止於接近CNT 30附近的部分反應性離子蝕刻(RIE)圖案化閘極。部分閘極介電質51可留下以保護CNT。
接著使用間隔物材料的等形沈積及其後經執行以免損壞CNT 30的非等向性蝕刻製程,沿著閘極側壁形成間隔物60。也就是說,間隔物60的非等向性蝕刻在一暴露剩餘的閘極介電質51後即在端點處停止,或計時以恰好在蝕刻劑(即,運用電漿的蝕刻劑)將到達CNT 30的時間之前終止。無論是哪一種情況,一旦蝕刻製程停止,接著即進行從源/汲區70實質上完全移除所有間隔物60及閘極介電質51材料的等向性濕式蝕刻。
如圖4所示,此製程的結果是間隔物60、或間隔物60及閘極介電質51將在軸向及圓周方向上接觸及實質上環繞CNT 30,致使源/汲區70(說明如下)可與閘極堆疊50隔離。尤其,間隔物60、或間隔物60及閘極介電質51沿著橫跨間隔物60厚度的接觸表面及CNT 30的幾乎整個曲面(即,幾乎360°圍繞CNT 30)接觸CNT 30,且不會使CNT 30從結晶介電質20脫離。
參考圖5及圖6,在形成絕緣閘極堆疊50及間隔物60後,磊晶生長源/汲區70以與為絕緣閘極堆疊50所暴露之CNT 30的部分接觸。如圖6所示,在磊晶源/汲區70與CNT 30之間的接觸圍繞CNT 30幾乎整個圓周延伸,結果形成可靠的接觸表面80。因此,如上述,源/汲區70沿著橫跨源/汲區70厚度的接觸表面及CNT 30幾乎整個曲面(即,同樣地,幾乎360°圍繞CNT 30)接觸CNT 30,且不會使CNT 30從結晶介電質20脫離。
如上述,結晶介電質20的存在可促進源/汲區70的磊晶生長,結晶介電質20由於其結晶結構與磊晶矽的結晶結構相似而可播下晶種且之後允許磊晶生長矽。所產生的磊晶源/汲區70為自我對準,因為採用了單一步驟微影界定兩個絕緣閘極區。
可根據各種已知方法完成磊晶生長源/汲區70的製程,且在稍後完成全部或局部矽化。例如,可藉由使用原位摻雜矽磊晶,添加摻雜硼或磷的矽於暴露的CNT 30,形成源/汲區70。或者,源/汲區70可未摻雜而生長及稍後用離子物種(諸如硼(B)、砷(As)或磷(P))植入,接著進行快速熱退火以活化植入的摻雜物。
可使用在微電子領域中熟知的自我對準矽化製程,將磊晶源/汲區轉化成金屬矽化物。
雖然本發明已參考例示性具體實施例進行說明,但熟習本技術者應明白,在不脫離本發明的範疇下,可進行各種改變,並可以同等物取代其中元件。此外,在不脫離本發明的基本範疇下,可對本發明的說明內容進行許多修改以適應特別情況或材料。因此,預計本發明並不受限於揭露為執行本發明所設想之最佳模式的特定例示性具體實施例;而是預計本發明將包括所有落在隨附申請專利範圍之範疇內的具體實施例。
10...矽基板
20...結晶介電質
21...表面/結晶介電質的頂面
30...奈米碳管(CNT)
40...場光罩
41...邊緣
50...閘極介電質及閘極電極閘極堆疊
51...閘極介電質
52...閘極堆疊材料
53...閘極光罩材料
60...間隔物
70...源/汲區
80...接觸表面
在說明書結尾處的申請專利範圍中,將具體點明並清楚主張被視為本發明的標的。在結合附圖的「實施方式」中,顯示本發明上述及其他方面、特徵、及優點,圖式中:
圖1圖解具有結晶介電層及沈積之奈米碳管的矽基板;
圖2圖解圍繞奈米碳管形成的場光罩;
圖3圖解圖案化於奈米碳管上的閘極堆疊;
圖4圖解圍繞閘極堆疊形成的絕緣體;
圖5圖解源/汲區的磊晶生長;及
圖6顯示與磊晶源/汲材料接觸之奈米碳管的視圖。
10...矽基板
20...結晶介電質
40...場光罩
50...閘極介電質及閘極電極閘極堆疊
60...間隔物
70...源/汲區
Claims (15)
- 一種形成一自我對準裝置的方法,包含:沈積奈米碳管(CNT)於一結晶介電基板上;隔離包圍該等CNT之位置之該結晶介電基板的一部分;形成閘極介電質、閘極電極及閘極堆疊於該等CNT上並維持其結構完整性;及形成與在該結晶介電基板上自該等閘極介電質、閘極電極及閘極堆疊暴露之該等CNT的部分接觸的磊晶源/汲區。
- 如申請專利範圍第1項所述之方法,其中該CNT沈積包含平行沈積該等CNT。
- 如申請專利範圍第1項所述之方法,其中該隔離包含形成一場光罩作為該結晶介電基板之該部分的一圍蔽(enclosure)。
- 如申請專利範圍第1項所述之方法,其中該形成閘極介電質、閘極電極及閘極堆疊於該等CNT上並維持其結構完整性包含相對於該等CNT平行及垂直形成絕緣閘極堆疊,或包含計時反應性離子蝕刻(RIE),或包含計時非等向性蝕刻及其後的濕式等向性蝕刻。
- 如申請專利範圍第1項所述之方法,其中該形成與在該結晶介電基板上自該等閘極介電質、閘極電極及閘極堆疊暴露之該等CNT的部分接觸的磊晶源/汲區包含未摻雜磊晶生長,或包含原位摻雜磊晶生長,包含退火。
- 一種形成自我對準磊晶源/汲接觸的製程,包含: 沈積奈米碳管(CNT)於一結晶介電底層上;利用一硬光罩遮蔽場區;用一在該等CNT頂部上的硬光罩圖案化一閘極堆疊;用間隔物包封(encapsulating)該閘極堆疊;及磊晶生長鄰接該等間隔物的源/汲區以提供自我對準源/汲極。
- 如申請專利範圍第6項所述之製程,其中該CNT沈積包含平行沈積該等CNT,或其中遮蔽包含形成其中沈積該等CNT之該結晶介電底層之一部分的一圍蔽。
- 如申請專利範圍第6項所述之製程,其中該圖案化包含相對於該等CNT平行及垂直圖案化多個閘極堆疊,或包含計時反應性離子蝕刻(RIE)該閘極堆疊。
- 如申請專利範圍第6項所述之製程,其中該包封包含計時非等向性蝕刻該等間隔物,繼而濕式等向性蝕刻該等間隔物。
- 如申請專利範圍第6項所述之製程,其中該磊晶生長包含未摻雜磊晶生長,或包含原位摻雜磊晶生長。
- 如申請專利範圍第6項所述之製程,另外包含在該等源/汲區退火。
- 一種自我對準裝置,包含:複數個奈米碳管(CNT),其佈置於一結晶介電基板上;一場光罩,其佈置於該結晶介電基板上作為圍繞該等CNT且 不接觸該等CNT的一矩形平面圍蔽;複數個絕緣閘極堆疊,其形成於該等CNT上且維持其結構完整性;及磊晶源/汲區,其設置與為該等絕緣閘極堆疊所暴露之該等CNT的部分接觸。
- 如申請專利範圍第12項所述之自我對準裝置,其中該等CNT實質上互相平行佈置,及該等閘極堆疊相對於該等CNT實質上垂直佈置。
- 如申請專利範圍第12項所述之自我對準裝置,其中該結晶介電基板包含氧化鑭釔(LaYO),或該場光罩包含二氧化矽(SiO2 )。
- 如申請專利範圍第12項所述之自我對準裝置,其中該等閘極堆疊包含一閘極介電質、一閘極堆疊材料及一絕緣材料,及其中該閘極介電質包含二氧化鉿(HfO2 ),該閘極堆疊材料包含氮化鈦(TiN)或鎢(W),及該絕緣材料包含氮化矽(SiN)。
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US8754403B2 (en) | 2014-06-17 |
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