TWI504015B - A light source for various beam-shape led luminaries - Google Patents

Description

Luminaire light source with multiple light output LEDs

The invention relates to a luminaire light source technology with a plurality of light-emitting diodes, and in particular to a vehicular headlight source made of an arbitrarily shaped light-emitting diode wafer.

The illumination light emitted by the car headlights can be divided into low beam and high beam. The respective light distribution is of course the main purpose of driving illumination; however, considering the driving of the incoming car Safety, the light distribution of the car's headlights must be properly designed to minimize the impact on the sight of the car. Many countries even impose regulations on the distribution of light patterns, especially for the distribution of the low beam.

Due to advances in semiconductor technology for lighting, light-emitting diodes (LEDs) have become one of the best choices for automotive headlamp sources. However, due to the cutting technology of the conventional light-emitting diode, the shape of the light-emitting diode light source is mostly square or rectangular. For an application surface requiring a special light type such as an automobile headlight, it is often necessary to use an additional optical component. The light pattern is shielded to form an appropriate or compliant light pattern distribution, and the problem of its luminescent yellow halo and optical cut-off line is solved, which will reduce luminous efficiency and increase manufacturing cost.

In addition, cars driving at night often turn on the high beam to improve the visibility of the road due to poor road conditions or poor line of sight, but this can cause glare problems for the driver of the incoming or front vehicle. If the car is equipped with a detector, the vehicle system will automatically turn off the high beam when it detects the arrival of the oncoming vehicle or the preceding vehicle to avoid the glare problem; however, the visibility of the road is reduced after the high beam is turned off. Will increase the chance of an accident.

In an aspect of the invention, an embodiment provides a light source of a light emitting diode, comprising: a first light emitting diode chip that emits a first light beam pattern; and a second light emitting diode chip, The light emitting forms a second beam pattern, the second beam pattern is different from the first beam pattern, and the combination of the first and second beam patterns forms a third beam pattern. The light source can be controlled by a controller to emit a low beam and a high beam required for driving the vehicle, wherein the first beam pattern forms the low beam, and the third beam pattern forms the high beam.

The light emitting surface shape of the first light emitting diode wafer may be non-rectangular.

The first LED chip comprises: a first sub-wafer having a light-emitting surface shape of a first rectangle; and a second sub-wafer having a light-emitting surface shape of a first trapezoid; wherein the first rectangle The width is equal to the short base length of the first trapezoid. The first trapezoid is a right-angled trapezoid, and the short bottom inner angle is between 100 degrees and 140 degrees. The first and second wafers are respectively controlled by the controller.

The light emitting surface shape of the second light emitting diode wafer is non-rectangular.

The second LED chip comprises: a third sub-wafer having a light-emitting surface shape of a second rectangle; and a fourth sub-wafer having a light-emitting surface shape of a second trapezoid; wherein the second rectangle The width is equal to the length of the long base of the second trapezoid. The third and fourth wafers are respectively controlled by the controller.

The light-emitting surface shape of the first light-emitting diode wafer is non-rectangular, and the light-emitting surface shape of the second light-emitting diode wafer is non-rectangular.

The first LED chip comprises: a first sub-wafer having a light-emitting surface shape of a first rectangle; and a second sub-wafer having a light-emitting surface shape of a first trapezoid; and the second illumination The polar body wafer comprises at least: a third sub-wafer having a light-emitting surface shape of a second rectangle; and a fourth-order wafer having a light-emitting surface shape of a second trapezoid; wherein the width of the first rectangle is equal to the first a trapezoidal short base length, and the width of the second rectangle is equal to the long base length of the second trapezoid. The first, second, third and fourth wafers are respectively controlled by the controller.

In order to enable your review committee to have a better understanding and understanding of the features, purposes and functions of the present invention, the detailed description of the drawings is as follows:

1 is a schematic plan view of a light source of a light-emitting diode lamp according to a first embodiment of the present invention, which can be used for a headlight for a vehicle or other lamp. The light source can control the low beam and the high beam required for driving the vehicle by a controller (not shown). Referring to FIG. 1 , the light source 100 is composed of a plurality of light emitting diode chips. The first embodiment includes a first light emitting diode chip 110 and a second light emitting diode chip 120 . The illuminating of the polar body wafer can form a first beam pattern, and the illuminating of the second illuminating diode chip can form a second beam pattern, and the combination of the first and second beam patterns form a The third beam pattern. Each embodiment of the present invention will take the right side light source of the headlight for a vehicle as an example, and the light source on the left side or even the other side may adopt a symmetrical or corresponding design.

The car headlights can be generally divided into a low beam lamp and a high beam lamp in consideration of driving illumination. In this embodiment, the first beam pattern is used to form a low beam beam pattern for driving illumination, and the third beam is used. The pattern is used to form a high beam beam pattern for driving illumination. The embodiment may further include a focusing convex lens (not shown) such that the first and second light emitting diode chips are substantially disposed at a focus of the lens for accepting and collecting the first and second The light emitted by the LED chip is formed in the front of the vehicle to form a low beam or a high beam type projection.

Due to the imaging effect of the lens, although the light pattern formed by the headlight source of the vehicle in front of the vehicle and the shape of the light emitting surface of the light emitting diode wafer are upside down and left and right, the shape of the light emitting surface is basically It is equivalent to the formed light pattern distribution; therefore, FIG. 1 can also be used as a schematic diagram of the light distribution of the vehicle headlight source of the present embodiment, or a schematic diagram of the shape of the light emitting surface of the light emitting diode wafer. For the sake of simplicity and convenience of description, the present specification does not consider the directionality with respect to the above-described shape, and the shape in which the upper and lower sides or the left and right are reversed is the same. 2A to C are exploded views of the light source wafer structure according to FIG. 1. FIG. 2A shows the shape of the first light emitting diode wafer 110, and may also be a low beam light type distribution of the vehicle headlight; 2B shows the shape of the second LED wafer 120 and the light distribution formed thereby; and FIG. 2C is the superposition of FIG. 2A and B, and is the high beam of the headlight of the vehicle. Type distribution. According to FIG. 2A, the first LED array 110 is composed of a first rectangle 111 and a right-angled triangle 112. The first rectangle 111 belongs to an oblong rectangle having a length L greater than or equal to the width W _{1 .} And the right-angle end of the right-angled triangle 112 is disposed on the upper right side of the first rectangle 111 to form a light-type distribution having a low beam effect. According to FIG. 2B and C, the shape of the light emitting surface of the first and second LED chips is combined into a second rectangle 130 whose length L is greater than or equal to the width W to form a light distribution having the function of the high beam; The shape of the second LED chip 120 is the area of the second rectangle 130 that is occupied by the first LED chip 110, and is located in the upper half of the light source, which is also like FIG. Shown. The shape of the first or second light-emitting diode wafer described above is not limited thereto, and may be other light source shapes capable of forming a low beam or a high beam type distribution.

The first light emitting diode chip may be composed of at least two light emitting diode sub-wafers, and at least one of the light emitting surface shapes is non-rectangular; in addition, the second light emitting diode chip may also be at least Two light-emitting diode sub-wafers are formed, and at least one of the light-emitting surface shapes is non-rectangular. Figure 3 is a plan view showing a light source for a headlight for a vehicle according to a second embodiment of the present invention. Referring to FIG. 3 , the light source 300 is composed of four LED sub-wafers, and includes a first wafer 310 , a second wafer 320 , a third wafer 330 , and a fourth wafer 340 . The combination of the first wafer 310 and the second wafer 320 will be equivalent to the first LED wafer 110 of the first embodiment, and the first and second wafers are respectively the first LED The polar wafer 110 is approximately divided into the left and right halves; for the same reason, the combination of the third wafer 330 and the fourth wafer 340 is equivalent to the second LED wafer 120 of the first embodiment described above, And the third and fourth sub-discs are respectively left and right halves of the first LED sub-die 120. As shown in FIG. 3, the first wafer 310 has a rectangular shape, the second wafer 320 has a trapezoidal shape, and the width of the rectangle is equal to the short bottom length W _{1 of} the trapezoid; and the third wafer 330 The shape of the fourth wafer 340 is trapezoidal, and the width of the rectangle is equal to the long bottom length W _{2 of} the trapezoid. In order to achieve a better low beam illumination effect when the light source of the vehicle headlight is driven, the shape of the second wafer 320 can be designed as a right angle trapezoid, as shown in FIG. 3, and the right angle trapezoid has a short bottom angle. Between 100 degrees and 140 degrees.

In addition, the operations of the first and second wafers can be respectively controlled by the controller, and if the first and second wafers are simultaneously turned on, the low beam can be turned on; The first and second wafers can turn off the low beam. In addition, the first and second sub-arrays may be independently operated due to the difference in design of the beam pattern to be formed, for example, the first wafer is turned on and the second wafer is turned off. The above independent operation is also applicable to the driving of the third and fourth wafers. For example, the operations of the first, second, third, and fourth sub-chips can be respectively controlled by the controller, and if the wafers are simultaneously turned on (on), the high beam can be turned on; By turning off the secondary wafers, the high beam can be turned off. In addition, the first, second, third, and fourth sub-wafers may be independently operated according to the difference in design of the beam pattern to be formed, for example, the third wafer is turned on to make the fourth The secondary wafer is closed.

In another embodiment, the first, second, third, and fourth sub-wafers are respectively controlled by the controller, and the illumination combination thereof can form a beam pattern different from the foregoing, for example, the first beam. a pattern, the second beam pattern, or a combination of the first beam pattern and the second beam pattern. In addition, the operation of the above-described light-emitting diode wafer or sub-wafer also includes operating conditions such as color temperature, wavelength, and color rendering of each of the light-emitting diodes, which integrates a larger number of light-emitting diodes. The sub-wafer will be designed to derive a smart lighting system.

For example, FIG. 4 is a plan view showing a light source for a headlight for a vehicle according to a third embodiment of the present invention. Referring to FIG. 4, the light source 400 is composed of 11 light-emitting diode sub-wafers, including sub-wafers 401 to 411; wherein the sub-wafers 407 to 411 are used to form a light-type distribution having a low beam effect ( As shown in FIG. 5A, if the sub-wafers 401 to 406 are combined, a light pattern distribution having a high beam function can be formed (as shown in FIG. 5B). It is worth noting that the operations of the secondary wafers 401 to 411 are independent; this will be applicable to smart vehicle systems. For example, if it is detected that the position of the incoming vehicle is 404 and 405 of the high beam type distribution, then only the sub-wafers 404 and 405 can be closed, while the sub-wafers 401 to 403 and 406 to 411 are still retained. The glare effect on the oncoming vehicle can be minimized while maintaining sufficient visibility (as shown in Figure 5C).

In another embodiment, the sub-wafers 401 to 411 are respectively controlled by the controller, and the illumination combination thereof can form a beam pattern different from the foregoing, for example, the first beam pattern, the second beam. a pattern, or a combination of the first beam pattern and the second beam pattern. For example, the sub-wafers 401 to 411 can also specify operating conditions such as illuminating color temperature, wavelength, and color rendering of each of the LED sub-arrays 401 to 411 according to the illuminating characteristics required for forming the beam pattern, respectively. . In normal weather, the high color temperature makes the human eye feel stronger, but its penetrating power is relatively low, so that in the case of dense fog or rain, the visibility is worse, and the headlight source is easy to be positive. The light that illuminates the road surface in front causes the glare problem of the other party because of the reflection of the wet road surface. Therefore, the light-emitting diodes of the sub-wafers 402 to 405 and 408 to 410 belonging to the intermediate portion of the light source can be operated to emit lower The color temperature light (better color temperature is 4300K) increases the visibility of the driver's vision due to the increased penetration of the illumination. In addition, it is also possible to operate the light-emitting diode sub-wafers on light that emits a plurality of short-wavelength components, thereby increasing the visibility of the driver's vision due to an increase in lighting comfort. Considering the effect of color rendering, high color rendering will improve the stereo recognition of the object, but its price is relatively high. Further deriving from the concept of the present embodiment, the vehicle headlight light source can adjust the light-emitting characteristics such as color temperature, wavelength, or color rendering according to the weather conditions, thereby constructing a smart headlight system.

The above-mentioned light-emitting diode chips each have different shapes, and are not directly fabricated by a conventional light-emitting diode chip technology which can only form a square or a rectangle, and must be supplemented by an additional optical shielding element, but this will reduce the light emission. Efficiency and increase manufacturing costs. Therefore, it is necessary to develop a light-emitting diode technology capable of producing an illuminating surface of an arbitrary shape to satisfy the needs of the above embodiments. 6 is a flow chart of a method for fabricating a light-emitting diode wafer according to a fourth embodiment of the present invention, for fabricating a light-emitting diode wafer of any shape, to realize various embodiments of the present invention; and the light-emitting diode chip The schematic diagram of the structure is shown in Figure 7A to J according to the sequence of the production process.

This embodiment is directed to an epitaxial substrate 710 having a predetermined mesa shape etched prior to the native substrate removal process. Please refer to FIG. 6 and FIG. 7A to J at the same time, and the method 600 includes:

Step 610, a first substrate 701 is provided as a sapphire substrate, and has an epitaxial layer 702 thereon, and the epitaxial layer 702 is sequentially from bottom to top. A semiconductor layer 703, a light-emitting layer 704, and a second semiconductor layer 705 are formed as a light-emitting structure of the light-emitting diode 710, as shown in FIG. Here, the first substrate 701 may be any substrate suitable for the growth of the light emitting diode semiconductor layer, such as an alumina substrate, a tantalum carbide substrate, or a gallium arsenide substrate, etc., and the first substrate 701 may have a thickness greater than 150 μm. Or greater than 600 μm (the thickness of the substrate may be greater than 600 μm if it is a tantalum carbide substrate or a gallium arsenide substrate). The luminescent layer 704 may be a semiconductor layer of a multiple quantum well (MQW) structure, and the material thereof may be selected from the group consisting of a chemical element of group III-V, a chemical element of group II-VI, a chemical element of group IV, and IV. a chemical element of Group -IV or a combination of the above chemical elements, for example: AlN, GaN, AlGaN, InGaN, AlInGaN, GaP, GaAsP, GaInP, AlGaInP, or AlGaAs. The first semiconductor layer 703 and the second semiconductor layer 705 are respectively an N-type and a P-type epitaxial layer, or a P-type and an N-type epitaxial layer, which are not limited herein, and the material thereof is also optional. A combination of a chemical element of Group III-V, a chemical element of Group II-VI, a chemical element of Group IV, a chemical element of Group IV-IV, or a combination of the above. For example, when the first semiconductor layer 703 is an N-type gallium nitride-based semiconductor, the second semiconductor layer 705 is a P-type gallium nitride-based semiconductor, and the first semiconductor layer 703 is a P-type gallium nitride-based semiconductor. The second semiconductor layer 705 is an N-type gallium nitride-based semiconductor, and the light-emitting layer 704 may be a gallium nitride-based semiconductor. In addition, a cerium oxide layer 706 may be further formed on the second semiconductor layer 705; this is to ensure that the surface of the second semiconductor layer 705 is not subjected to insufficient protection of the photoresist during the subsequent etching process. Damage, as shown in Figure 7B. However, if the photoresist used has sufficient protection for subsequent etching processes, this step and subsequent removal of the ceria layer are not required.

Step 620, using photolithography, the photoresist layer 707 defines a predetermined pattern of the shape of the LED body on the epitaxial layer 702, and removes the photoresist layer by a wet etching process. The 707-covered ruthenium dioxide layer 706 is shown in Figure VIIC. Next, mesa etching is performed by the protection of the photoresist layer 707 and the hafnium oxide layer 706 to form a mesa 730 of a predetermined shape, as shown in FIG. At this time, the phase task of the photoresist layer 707 and the ceria layer 706 is completed, and can be removed, as shown in FIG. 7E.

Step 630, forming and defining an electrode reflective layer 708 on the mesa 730, as shown in FIG. 7F; the electrode reflective layer 708 is configured to form a ohmic contact with the epitaxial layer 702 to reduce the potential barrier and reduce leakage current. And has the effect of a mirror to improve the luminous efficiency of the light-emitting diode. The electrode reflective layer 708 material may be any electrically conductive material (eg, palladium, platinum, nickel, gold, silver, or a combination thereof), and may further comprise an ohmic contact material, a diffusion barrier material, a reflective material, or the like The combination.

Step 640, forming and defining an adhesive metal layer 709 on the mesa 730, the adhesive metal layer 709 completely covering the electrode reflective layer 708, as shown in FIG. The adhesive metal layer 709 material may be any electrically conductive material (for example: palladium, platinum, nickel, gold, silver, or a combination thereof), and may further comprise an ohmic contact material, a diffusion barrier material, a reflective material, or the like. The combination.

Step 650, forming and defining another photoresist layer 717 on the mesa 730 by using a photolithography technique, the photoresist layer 717 completely covering the adhesion metal layer 709.

Step 660, depositing a passivation layer 718 on the mesa, the passivation layer 718 completely covering the photoresist layer 717 and the circumferential side of the mesa, as shown in FIG.

Step 670, removing the photoresist layer 717 and a portion of the passivation layer 718 deposited on the photoresist layer 717, as shown in FIG. In this embodiment, before the step 680 of bonding the LEDs 710 to the second substrate 720, the LEDs 710 can be cut according to actual needs to form a plurality of rectangular LED dipoles. The light-emitting diode die has only a single electrode (the first electrode 711 formed by the adhesive metal layer 709 and the electrode reflective layer 708 of FIG. 7I), and the light-emitting diode can be completely electrically connected. The electrode is not described later because the primary substrate (the first substrate 701) has not been removed and will be described later.

Step 680, a second substrate 720 is provided as a submount substrate for a package, and the light emitting diode die 710 has the surface of the mesa 730 by means of hot pressing or ultrasonic heating or silver paste. Bonded to the second substrate 720, as shown in FIG. In this embodiment, the second substrate 720 is a germanium substrate, but not limited thereto, and may also be a substrate of ceramic or other materials. The second substrate 720 may be formed with a bonding pad and other circuits for electrically connecting to the bonding metal layer 709 of the LED die 710.

Step 690, removing the substrate portion 701 of the light-emitting diode die 710 by a laser lift-off, the original shape of the substrate 701 of the light-emitting diode die 710 is square or rectangular, after passing through After the laser lift-off process is removed, the remaining epitaxial layer 702 or the mesa 730 is the shape of the light-emitting diode wafer defined by the predetermined pattern of step 620, as shown in FIG. Further, if the first substrate is a GaAs, SiC, Si, or ZnO substrate, a wet etching process can be used to remove it. Therefore, the shape of the light-emitting diode wafer produced by the method is not limited, and may be circular, elliptical, rectangular, polygonal, or any other shape.

So far, in this embodiment, the fabrication of the single-electrode (electrode reflective layer 708) light-emitting diode wafer has been completed. If another electrode is to be formed to operate the light-emitting diode, the light-emitting diode can be removed after laser stripping. On the surface of the epitaxial layer 702 exposed by the wafer, the above steps 630 and 640 are performed again, and an electrode reflective layer 728 and an adhesive metal layer 729 are formed and defined to form another electrode (such as the second electrode 712 of FIG. 7L). Rewiring to the second substrate 720, until now, only to provide a complete electrical connection, as shown in Figure VII. In addition, in order to enable the light emitting diode to emit light of a suitable color according to actual needs, the embodiment may further form a fluorescent layer on the second substrate to add a fluorescent layer on the light emitting surface of the light emitting diode chip. To achieve this; the following are the steps of the preferred embodiment:

In step 692, another photoresist is formed on the second substrate 720 by a photolithography technique to form a temporary pattern covering a region of the second substrate 720 except the light emitting surface of the LED substrate.

In step 693, a phosphor layer is formed on the temporary pattern, and the phosphor layer is uniformly mixed with the phosphor powder in the resin.

Step 694, since the purpose of the temporary pattern is to form a phosphor layer having a uniform thickness on the epitaxial layer or the light-emitting surface of the light-emitting chip, and the staged task has been completed, the step is to remove the temporary pattern and A portion of the phosphor layer formed on the temporary pattern leaves a phosphor layer on the light emitting surface of the light emitting chip. Since the thickness of the light-emitting layer is reduced from 90 to 100 μm in the prior art to about 5 μm in the thickness of the epitaxial layer, the uniformity of the coating of the phosphor powder is greatly improved, so that the yellow haze and the color temperature unevenness can be improved.

The present invention can also be applied to directly etch a predetermined mesa shape or a light-emitting surface of the light-emitting wafer by a native epitaxial substrate removal process, which is a fifth embodiment according to the present invention. This embodiment is similar to the foregoing fourth embodiment, and only the differences between the two will be described below, and the same portions will not be described again. In step 620, the photoresist layer 707 defines a pattern for setting the approximate size of the LED wafer, and is generally square or rectangular instead of the final shape of the light emitting surface of the LED substrate. . Therefore, in this embodiment, after step 690, step 691 must be added to form another photoresist layer on the second substrate 720, and the photoresist layer is defined by a photolithography technique as a predetermined LED. Forming the light-emitting surface of the wafer and removing the epitaxial layer 702 not covered by the photoresist layer by a dry etching process, thereby defining the shape of the light-emitting diode wafer; therefore, using the embodiment The light-emitting diode wafer is not limited in shape, and may be circular, elliptical, rectangular, polygonal, or any other shape. After the dry etching process of the above step 691, a wet etching process may be applied to reduce the leakage current caused by the dry etching process to the light emitting diode. In addition, the phosphor layer process after this step 691 is also the same as steps 692 to 694 described above.

In addition, the above-described laser stripping technique can also be realized by excimer laser. FIG. 8 is a schematic diagram showing a process of removing the first substrate 701 of the native substrate using the excimer laser beam 800. The laser beam 800 melts the GaN material at its interface with the first substrate 701 to facilitate peeling of the first substrate 701. In addition, the etching process can be an alternative technique for removing the native substrate. FIG. 9 is a schematic diagram showing a process of removing the first substrate 701 of the native substrate using an etching process. The first substrate 701 may be a germanium-based substrate such as Si, SiC, tantalum carbide on insulator, tantalum carbide on quartz, or the like, such that a conventional etching technique such as reactive ion etching (RIE) may be used with the aid of the etchant 810. The etching process is performed. The layer between the native substrate and the epitaxial layer 702 can be etched away using a non-laser lift-off technique. For example, if the native substrate is silicon carbide on insulator (SiCOI) and the etchant solution etches away the insulator material, the remainder of the native substrate can then be removed; a sapphire substrate with an undercut etch layer can also be used.

Figure 10 is a cross-sectional view showing the structure of a light-emitting diode wafer according to a fifth embodiment of the present invention, and the light-emitting surface may have any shape. Referring to FIG. 10 , the LED device of the embodiment includes an adhesive layer 910 , an epitaxial layer 902 , and a substrate 920 . The adhesive layer 910 has a first surface and a second surface opposite to the first surface. The adhesive layer 910 includes an electrode reflective layer 908 and a metal layer 909 formed on the electrode reflective layer 908. The epitaxial layer 902 includes a passivation layer 918 disposed on an edge side of the epitaxial layer 902. The epitaxial layer 902 is bonded to the first surface of the adhesive layer 910, and the surface area of the epitaxial layer 902 is greater than the The surface area of the first surface of the adhesive layer 910. An integrated circuit is disposed on the surface of the substrate 920. The substrate 920 is bonded to the second surface of the adhesive layer 910, and the surface area of the substrate 920 is greater than the surface area of the second surface of the adhesive layer 910. As shown, the edge of the adhesive layer 910 can be a retraction of the edge of the epitaxial layer 902. The epitaxial layer 902 can be a sequential stack of a first semiconductor layer 903, a light emitting layer 904, and a second semiconductor layer 905 to form a light emitting mechanism of the light emitting diode chip. The electrode reflective layer 908 can be used to form a ohmic contact with the epitaxial layer 902 and have a mirror function, and the metal layer 909 can be further used to bond the epitaxial layer 902 to the substrate 920. The substrate 920 can be constructed of tantalum or ceramic material. An integrated circuit can be formed on the substrate 920 to electrically connect the electrode reflective layer 908. The electrode reflective layer 908 is configured to form a ohmic contact with the epitaxial layer 902 to reduce the potential barrier and reduce leakage current, and has the effect of the mirror to improve the luminous efficiency of the light emitting diode. The electrode reflective layer 908 material may be any electrically conductive material (eg, palladium, platinum, nickel, gold, silver, or a combination thereof), and may further comprise an ohmic contact material, a diffusion barrier material, a reflective material, or the like The combination. The metal layer 909 material may be any electrically conductive material (for example: palladium, platinum, nickel, gold, silver, or a combination thereof), and may further comprise an ohmic contact material, a diffusion barrier material, a reflective material, or the like. combination.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto. It is to be understood that the scope of the present invention is not limited by the spirit and scope of the present invention, and should be considered as a further embodiment of the present invention.

100. . . light source

110. . . First light emitting diode chip

111. . . First rectangle

112. . . Right triangle

120. . . Second light emitting diode chip

130. . . Second rectangle

300. . . light source

310. . . First wafer

320. . . Second wafer

330. . . Third chip

340. . . Fourth chip

400. . . light source

401 to 411. . . Secondary wafer

600. . . method

610/620/630/640/650/660/670/680/690. . . step

691/692/693/694. . . step

710. . . Light-emitting diode (grain)

701. . . First substrate

702/902. . . Epitaxial layer

703/903. . . First semiconductor layer

704/904. . . Luminous layer

705/905. . . Second semiconductor layer

706. . . Ceria layer

707/717. . . Photoresist layer

708/728/908. . . Electrode reflective layer

709/729. . . Bonded metal layer

711. . . First electrode

712. . . Second electrode

718/918. . . Passivation layer

720. . . Second substrate

730. . . mesa

800. . . Laser beam

810. . . Etchant

909. . . Metal layer

910. . . Adhesive layer

920. . . Substrate

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a light source for a headlight for a vehicle according to a first embodiment of the present invention.

2A to C are exploded structural views of the vehicle headlight light source according to Fig. 1.

Figure 3 is a plan view showing a light source for a headlight for a vehicle according to a second embodiment of the present invention.

Figure 4 is a plan view showing a light source for a headlight for a vehicle according to a third embodiment of the present invention.

5A to C are respectively a low beam, a high beam, and a light distribution of a special condition of the vehicle headlight light source of the third embodiment.

6 is a flow chart of a method of fabricating a light emitting diode wafer according to a fourth embodiment of the present invention.

7A to L are schematic cross-sectional views showing the structure of the light emitting diode wafer shown in the order of the manufacturing flow of the fourth embodiment, respectively.

Figure 8 illustrates the removal of the native substrate using the excimer laser beam 800.

Figure 9 is a schematic diagram of a process for removing a native substrate using an etching technique.

Figure 10 is a cross-sectional view showing the structure of a light-emitting diode wafer according to a fifth embodiment of the present invention.

600. . . method

610/620/630/640/650/660/670/680/690. . . step

Claims (15)

A light source for a light emitting diode (LED), comprising: a first light emitting diode chip that emits light to form a first light beam pattern; and a second light emitting diode chip that emits light to form a second light beam pattern The second beam pattern is different from the first beam pattern; wherein the combination of the first and second beam patterns forms a third beam pattern. For example, in the illuminating light source of the illuminating diode of claim 1, the light source can be controlled by a controller to emit a low beam and a high beam required for driving the vehicle, wherein the first beam pattern forms the near The light beam, the third beam pattern forms the high beam. The light source of the light-emitting diode of claim 2, wherein the light-emitting surface of the first light-emitting diode wafer has a non-rectangular shape. The illuminating diode of the illuminating diode of claim 3, wherein the first illuminating diode chip comprises: a first sub-wafer having a light-emitting surface shape of a first rectangle; and a second sub-wafer, The light emitting surface has a shape of a first trapezoid; wherein the width of the first rectangle is equal to the length of the short bottom of the first trapezoid. The illuminating light source of the illuminating diode of claim 4, wherein the first trapezoid is a trapezoidal trapezoid, and the short bottom inner angle is between 100 degrees and 140 degrees. The illuminating light source of the illuminating diode of claim 4, wherein the first and second sub-wafers are respectively controlled by the controller. The illuminating light source of the illuminating diode according to the second aspect of the invention, wherein the illuminating surface shape of the second illuminating diode chip is non-rectangular. The illuminating light source of the illuminating diode of claim 7 , wherein the second illuminating diode chip comprises: a third sub-wafer having a light-emitting surface shape of a second rectangle; and a fourth sub-wafer, The shape of the light emitting surface is a second trapezoid; wherein the width of the second rectangle is equal to the length of the long bottom of the second trapezoid. The illuminating light source of the illuminating diode of claim 8 is wherein the third and fourth sub-wafers are respectively controlled by the controller. The illuminating light source of the illuminating diode of claim 1 further includes a lens for receiving light emitted by the first and second illuminating diode chips, wherein the first and second illuminating diodes The wafer is disposed substantially at the focus of the lens. The light source of the light-emitting diode of claim 2, wherein the light-emitting surface of the first light-emitting diode wafer is non-rectangular, and the light-emitting surface shape of the second light-emitting diode wafer is non-rectangular. The illuminating light source of the illuminating diode of claim 11 , wherein the first illuminating diode chip comprises at least: a first sub-wafer having a light-emitting surface shape of a first rectangle; and a second sub-wafer The light emitting surface has a first trapezoidal shape; and the second LED wafer comprises at least: a third sub-wafer having a light emitting surface shape of a second rectangle; and a fourth sub-wafer having a light emitting surface shape Is a second trapezoid; wherein the width of the first rectangle is equal to the length of the short bottom of the first trapezoid, and the width of the second rectangle is equal to the length of the long base of the second trapezoid. The illuminating light source of the illuminating diode of claim 12, wherein the first, second, third and fourth sub-wafers are respectively controlled by the controller. The illuminating light source of the illuminating diode of claim 13, wherein the first, second, third and fourth wafers are controlled to emit light to form a fourth beam pattern, the fourth beam pattern being different from the first a beam pattern, the second beam pattern, or the third beam pattern. For example, the illuminating light source of the illuminating diode of the first application of the patent scope can be used for a vehicular headlight or other luminaire.