TWI503455B - Electroplating device and electroplating method - Google Patents

Electroplating device and electroplating method Download PDF

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TWI503455B
TWI503455B TW099130141A TW99130141A TWI503455B TW I503455 B TWI503455 B TW I503455B TW 099130141 A TW099130141 A TW 099130141A TW 99130141 A TW99130141 A TW 99130141A TW I503455 B TWI503455 B TW I503455B
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space
plating
plating solution
tank
partition wall
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TW201109478A (en
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Toshihisa Isono
Shinji Tachibana
Naoyuki Omura
Shunsaku Hoshi
Kanako Matsuda
Koji Shimizu
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Uyemura C & Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02Tanks; Installations therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/04Removal of gases or vapours ; Gas or pressure control
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/16Regeneration of process solutions
    • C25D21/18Regeneration of process solutions of electrolytes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Description

電鍍裝置及電鍍方法Electroplating device and plating method

本發明係關於電鍍裝置及電鍍方法。The present invention relates to a plating apparatus and a plating method.

電鍍係利用於例如在印刷電路板上形成配線圖案之用途等。例如在硫酸銅電鍍,為得光澤、披膜物性、披覆性、對導通孔的填充性等的目的之披膜特性於鍍液添加有稱為光亮劑、柔軟劑、平整劑等的促進劑或抑制劑等的各種添加劑。The plating is used for, for example, a purpose of forming a wiring pattern on a printed circuit board. For example, in the copper sulfate plating, a coating agent called a brightener, a softener, a leveling agent, etc. is added to the plating solution for the purpose of glossiness, film property, drape property, filling property to a via hole, and the like. Or various additives such as inhibitors.

該等添加劑,於電路板表面抑制劑有效地作用,於通孔和導通孔之中藉由促進劑有效地作用,可促進對通孔的披覆或對導通孔的填孔。但是,在鍍液中促進劑變的過剩,則以抑制劑抑制活性核成長的效果會下降,而無法得到緻密的披膜,降低披膜的物性。此外,對電路板表面的析出抑制效果降低,而對通孔的覆蓋變差,對導通孔的填孔性變差等的不良情形。另一方面,若在於鍍液中的促進劑不足,則促進產生活性核之效果下降,而無法得到緻密的披膜,降低披膜的物性。此外,對通孔或導通孔內的促進效果變的不足,而對通孔的覆蓋性變差,對導通孔的填孔性變差等的不良情形。因此,鍍液中的各種添加劑以適當的平衡添加非常重要。The additives act effectively on the surface of the circuit board and act to promote the coating of the through holes or the filling of the via holes by the effective action of the promoter in the through holes and the via holes. However, when the accelerator is excessive in the plating solution, the effect of suppressing the growth of the active nucleus by the inhibitor is lowered, and a dense film is not obtained, and the physical properties of the film are lowered. Further, the effect of suppressing precipitation on the surface of the board is lowered, and the coverage of the via hole is deteriorated, and the hole filling property of the via hole is deteriorated. On the other hand, if the accelerator in the plating solution is insufficient, the effect of promoting the production of the active nucleus is lowered, and a dense film is not obtained, and the physical properties of the film are lowered. Further, the effect of promoting the inside of the through hole or the via hole is insufficient, and the coverage of the through hole is deteriorated, and the hole filling property of the via hole is deteriorated. Therefore, it is very important that the various additives in the plating solution are added in an appropriate balance.

此外,鍍液中的溶存氧濃度,眾所周知係影響電鍍披膜性能之主要原因之一。關於其理由,舉使用硫酸銅電鍍的一般光亮劑之雙(3-硫丙基)二硫化物(SPS)時之例加以說明。即,在於鍍敷處理中發生以下的一連串的氧化還原反應。於陰極的表面SPS被還原成為3-胇基丙烷-1-硫酸(MPS)。SPS是在陰極附近由兩個MPS回到一個SPS時藉由將銅離子還原而作為促進劑作用。不參與該反應的MPS會被溶存氧氧化而恢復成SPS。但是,如果溶存氧不足,則MPS與Cu+ 鍵結以Cu+ -MPS積蓄。Cu+ -MPS積蓄,則光亮劑濃度變的過剩,而無法充分得到目標的披膜性能。氧濃度變得過剩,則被氧氧化的MPS的量變多而還原銅離子的MPS的量降低,使促進效果不足,而無法充分得到目標得披膜性能。In addition, the concentration of dissolved oxygen in the plating solution is known to be one of the main factors affecting the performance of the plating film. The reason for this is described by way of an example of a bis(3-thiopropyl) disulfide (SPS) of a general brightener which is plated with copper sulfate. That is, the following series of redox reactions occur in the plating treatment. The surface SPS on the cathode was reduced to 3-mercaptopropane-1-sulfuric acid (MPS). SPS acts as a promoter by reducing copper ions when two MPSs are returned to one SPS near the cathode. MPS that does not participate in this reaction is oxidized by dissolved oxygen to return to SPS. However, if the dissolved oxygen is insufficient, the MPS and Cu + bonds are accumulated in Cu + -MPS. When Cu + -MPS is accumulated, the concentration of the brightener becomes excessive, and the target film performance cannot be sufficiently obtained. When the oxygen concentration is excessive, the amount of MPS oxidized by oxygen is increased, and the amount of MPS for reducing copper ions is lowered, so that the effect of promoting is insufficient, and the target film performance cannot be sufficiently obtained.

如此地,須要將鍍液中的溶存氧濃度調整在適正的範圍,惟作為陽極使用可溶性陽極時,因金屬銅的溶解等而消耗溶存氧,而容易使鍍液中的溶存氧濃度變低,作為陽極使用不溶性陽極時,由於從陽極會產生氧,固鍍液中的溶存氧濃度容易變高。因此,有各種將鍍液中的溶存氧濃度調整在既定範圍的技術被提案。In this case, it is necessary to adjust the dissolved oxygen concentration in the plating solution to a proper range. However, when a soluble anode is used as the anode, dissolved oxygen is consumed due to dissolution of metallic copper, and the dissolved oxygen concentration in the plating solution is easily lowered. When an insoluble anode is used as the anode, the concentration of dissolved oxygen in the solid plating solution tends to be high because oxygen is generated from the anode. Therefore, various techniques for adjusting the dissolved oxygen concentration in the plating solution to a predetermined range have been proposed.

例如日本特開2004-143478號公報,揭示有作為陽極使用可溶性陽極之電鍍裝置。該裝置,包括:儲留鍍液之鍍敷槽;及與該鍍敷槽為別體之他槽,於上述鍍敷槽與他槽之間具有鍍液循環的構造。於該裝置,在他槽藉由透過空氣吹入管將空氣吹入鍍液中,可將鍍液的溶存氧濃度維持在5ppm以上,以解決披膜質量之惡化。For example, Japanese Laid-Open Patent Publication No. 2004-143478 discloses a plating apparatus using a soluble anode as an anode. The device comprises: a plating tank for storing the plating solution; and a groove which is separate from the plating tank, and has a plating circulation structure between the plating tank and the other tank. In this apparatus, air is blown into the plating solution through the air blowing pipe in the tank, and the dissolved oxygen concentration of the plating solution can be maintained at 5 ppm or more to solve the deterioration of the quality of the film.

此外,日本特開2007-169700號公報,揭示作為陽極使用不溶性陽極的電鍍方法。於該方法,在於鍍敷槽藉由空氣或者惰性氣體攪拌鍍液,將鍍液的溶存氧濃度維持在30mg/公升以下,而可長期間穩定地填充被鍍物中的非貫通孔內部。Further, Japanese Laid-Open Patent Publication No. 2007-169700 discloses a plating method using an insoluble anode as an anode. In this method, the plating bath is stirred with air or an inert gas to maintain the dissolved oxygen concentration of the plating solution at 30 mg/liter or less, and the inside of the non-through hole of the object to be plated can be stably filled for a long period of time.

然而,近年,在印刷電路板等的配線,由於通孔、導通孔的微細化,而對鍍敷要求的品質也提升。例如,於鍍液中有異物浮游,則有該異物成核而在鍍敷披膜的一部份產生鍍瘤(瘤狀的部位),於電鍍裝置,設有由鍍液中分離鍍液中的異物之過濾器。該過濾器係將鍍液過濾將鍍液中的各種異物由鍍液分離。However, in recent years, in wirings such as printed circuit boards, the quality required for plating has been improved due to the miniaturization of through holes and via holes. For example, if there is foreign matter floating in the plating solution, the foreign matter nucleates and a part of the plating film is formed in a plated portion (tumor-like portion), and in the plating device, the plating solution is separated from the plating solution. Foreign body filter. The filter filters the plating solution to separate various foreign matters in the plating solution from the plating solution.

但是,如果有很多例如銅粒子等的金屬粒子附著於過濾器,則有因該金屬粒子消耗鍍液中的溶存氧,而使含於鍍液之添加劑(例如硫系添加劑等)變質之情形。因此,為了抑制鍍敷披膜的品質下降,須要頻繁地交換過濾器。However, if a large amount of metal particles such as copper particles adhere to the filter, the metal particles may dissolve the dissolved oxygen in the plating solution, and the additive (for example, a sulfur-based additive) contained in the plating solution may be deteriorated. Therefore, in order to suppress the deterioration of the quality of the plating film, it is necessary to frequently exchange the filter.

本發明的目的在於提供可調整鍍液的溶存氧濃度的同時,可減少起因於交換過濾器之成本之電鍍裝置及電鍍方法。It is an object of the present invention to provide a plating apparatus and a plating method which can reduce the concentration of dissolved oxygen in a plating solution while reducing the cost of the exchange filter.

本發明之電鍍裝置,包括:儲留鍍液之鍍敷槽;及他槽,其係與上述鍍敷槽為別體之槽,上述鍍液於與上述鍍敷槽之間循環,上述他槽,於其內部具有:第1空間;及位於較該第1空間為下游側之第2空間,而具有:上述第1空間內的上述鍍液之中超過既定高度的部分由上述第1空間流入上述第2空間,上述鍍液在於該第2空間在空氣中流下的構造。The plating apparatus of the present invention comprises: a plating tank for storing the plating solution; and a groove which is a groove of the plating tank, wherein the plating solution circulates between the plating tank and the plating tank a first space in the interior of the first space and a second space on the downstream side of the first space, and a portion of the plating solution in the first space that exceeds a predetermined height flows in from the first space In the second space, the plating solution is a structure in which the second space flows down in the air.

以下,邊參照圖面詳細說明本發明之實施形態。於以下之各實施形態,舉對被鍍物進行鍍銅之情形為例說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In each of the following embodiments, a case where copper plating is performed on a material to be plated will be described as an example.

<第1實施形態><First embodiment>

如圖1所示,本發明之第1實施形態之電鍍裝置11,包括:鍍敷槽13;與該鍍敷槽13為別體之他槽15;由鍍敷槽13輸送鍍液至他槽15之輸送側配管29;由他槽15送回鍍液至鍍敷槽13之回送側配管41。As shown in Fig. 1, a plating apparatus 11 according to a first embodiment of the present invention includes a plating tank 13; a tank 15 which is a separate body from the plating tank 13; and a plating solution 13 to transport the plating solution to the tank The conveying side piping 29 of 15; the plating liquid is returned from the other tank 15 to the returning side piping 41 of the plating tank 13.

鍍敷槽13,具有:上部開口之略長方體形狀的槽本體47;與該槽本體47一體設置之溢出槽49。於槽本體47的內部,配設有陽極55。此外,槽本體47,其構成可設置被鍍物的陰極57。The plating tank 13 has a groove main body 47 having a substantially rectangular parallelepiped shape with an upper opening, and an overflow groove 49 integrally provided with the groove main body 47. An anode 55 is disposed inside the tank body 47. Further, the groove body 47 constitutes a cathode 57 on which a plated object can be placed.

陽極55,分別配設在陰極57的兩旁。作為陽極55,使用可溶性陽極或不溶性陽極。作為可溶性陽極,例如可使用銅板。此外,可溶性陽極,亦可使用例如將球狀的銅(銅球)用鈦等所形成之網狀收容容器所收容者。該等銅板或銅球,可舉例如含有磷的含磷銅所形成者。作為不溶性陽極,可使用例如對Ti-Pt塗敷氧化銦者。The anodes 55 are disposed on both sides of the cathode 57, respectively. As the anode 55, a soluble anode or an insoluble anode is used. As the soluble anode, for example, a copper plate can be used. Further, as the soluble anode, for example, a cage in which a spherical copper (copper ball) is formed of titanium or the like can be used. The copper plate or the copper ball may be formed, for example, of phosphorus-containing copper containing phosphorus. As the insoluble anode, for example, an indium oxide coated with Ti-Pt can be used.

各陽極55,係配置於可使鍍液流通而不使陽極淤渣通過的陽極袋59的內部。陽極袋59,係例如以聚丙烯、聚乙烯等的材料形成。Each of the anodes 55 is disposed inside the anode bag 59 through which the plating solution can flow without passing the anode sludge. The anode bag 59 is formed of, for example, a material such as polypropylene or polyethylene.

陰極57與各陽極55之間,沿著陰極57的高度方向分別配設有噴嘴61。各噴嘴61,設有將通過回送側配管41由他槽15輸送之鍍液向陰極57側噴出之多數噴出口(無圖示)。藉由如此之噴嘴61的噴流,可攪拌陰極57周邊的鍍液。此外,陰極57周邊的鍍液的攪拌,在如上所述的噴流之攪拌之外,亦可以省略圖示之攪拌刀、攪拌槳等的機械式攪拌機的機械性攪拌。此外,亦可併用以噴流之攪拌與機械性攪拌。A nozzle 61 is disposed between the cathode 57 and each of the anodes 55 in the height direction of the cathode 57. Each of the nozzles 61 is provided with a plurality of discharge ports (not shown) that eject the plating liquid conveyed from the other grooves 15 through the return-side piping 41 toward the cathode 57 side. By such a jet flow of the nozzle 61, the plating solution around the cathode 57 can be stirred. Further, in addition to the stirring of the jet flow as described above, the stirring of the plating solution around the cathode 57 may omit mechanical stirring of a mechanical agitator such as a stirring blade or a stirring blade as shown. In addition, it can also be used for mixing and mechanical stirring of jet flow.

於陽極55與陰極57的之間,由省略圖示的電源裝置施加電壓。藉此,可對作為被鍍物的陰極57進行電鍍。A voltage is applied between the anode 55 and the cathode 57 by a power supply device (not shown). Thereby, the cathode 57 as a material to be plated can be plated.

溢出槽49,係一體地安裝於槽本體47的側部。於該溢出槽49,槽本體47內的鍍液會超過槽本體47的側壁51的上緣部53而流入。於該溢出槽49,設有感測該槽內的液水準的省略圖示的液面傳感器。藉由根據該液面傳感器的感測結果進行控制幫浦63的驅動或停止,可調節溢出槽49之液水準。The overflow groove 49 is integrally attached to the side of the groove body 47. In the overflow tank 49, the plating solution in the tank body 47 flows in beyond the upper edge portion 53 of the side wall 51 of the tank body 47. The overflow tank 49 is provided with a liquid level sensor (not shown) that senses the liquid level in the tank. The liquid level of the overflow tank 49 can be adjusted by controlling the driving or stopping of the pump 63 according to the sensing result of the liquid level sensor.

他槽15,具有:上部開口之略長方體形狀之他槽本體20;及將該他槽本體20的內部空間分成兩個的第1隔壁21。第1隔壁21,呈略矩形狀,由他槽本體20的底側向上立設。藉由該第1隔壁21,將他槽15內部分成第1空間17及位於該第1空間17之下游側之第2空間19。如圖1及圖2A所示,第1隔壁21,具有:由他槽15底側向上延伸的隔壁主體25;及由該隔壁主體25的上端向第2空間19側延設之突出片27。The groove 15 has a groove body 20 having a slightly rectangular parallelepiped shape with an upper opening, and a first partition wall 21 dividing the internal space of the other groove body 20 into two. The first partition wall 21 has a substantially rectangular shape and is erected upward from the bottom side of the tank body 20. The inside of the other tank 15 is divided into a first space 17 and a second space 19 located on the downstream side of the first space 17 by the first partition wall 21. As shown in FIG. 1 and FIG. 2A, the first partition wall 21 has a partition main body 25 extending upward from the bottom side of the other groove 15, and a protruding piece 27 extending from the upper end of the partition main body 25 toward the second space 19 side.

第1隔壁21的上緣部23,設定於較他槽本體20的上緣部為低的既定高度。即,他槽15,具有使超過第1空間17內的鍍液之中超過上述既定高度的部分溢出上緣部23,由第1空間17流進第2空間19的構造。於他槽15,只有較第1隔壁21上緣部23為上方的空間,第1空間17與第2空間19連通。此外,他槽15,在較上緣部23為下方係以避免鍍液在第1空間17與第2空間19之間移動地將第1空間17與第2空間19隔離的構造。The upper edge portion 23 of the first partition wall 21 is set to a predetermined height lower than the upper edge portion of the other groove main body 20. In other words, the groove 15 has a structure in which the portion exceeding the predetermined height in the plating liquid in the first space 17 overflows the upper edge portion 23 and flows into the second space 19 from the first space 17. In the other groove 15, the space above the upper edge portion 23 of the first partition wall 21 is the upper space, and the first space 17 communicates with the second space 19. Further, the groove 15 has a structure in which the first space 17 and the second space 19 are separated from each other by the lower edge portion 23 so as to prevent the plating solution from moving between the first space 17 and the second space 19.

流入第2空間19的鍍液,在於該第2空間19在空氣中流下。為如此地使鍍液在第2空間19在空氣中流下,在於第2空間19的鍍液的液面,調節成位於較第1隔壁21的上緣部23的上述既定高度為低的位置。The plating solution that has flowed into the second space 19 is that the second space 19 flows down in the air. In order to allow the plating solution to flow in the air in the second space 19, the liquid level of the plating solution in the second space 19 is adjusted to be lower than the predetermined height of the upper edge portion 23 of the first partition wall 21.

在於第2空間19的鍍液的液面,可藉由例如控制設於回送側配管41之幫浦64的驅動或停止而調節。此外,於第2空間19,亦可設置感測該空間內的液面水準之省略圖示的液面傳感器。可藉由根據該液面傳感器的感測結果進行控制幫浦64的驅動或停止,調節第2空間19的液面水準。The liquid level of the plating solution in the second space 19 can be adjusted by, for example, controlling the driving or stopping of the pump 64 provided on the return-side pipe 41. Further, in the second space 19, a liquid level sensor (not shown) that senses the level of the liquid in the space may be provided. The level of the liquid level of the second space 19 can be adjusted by controlling the driving or stopping of the pump 64 based on the sensing result of the liquid level sensor.

突出片27,係由隔壁主體25的上端向第2空間19側延設,其先端由隔壁主體25的第2空間19側的側面離隔。藉由設置如此之突出片27,由第1空間17流入第2空間19之鍍液,沿著突出片27的導至其先端部,由該先端部之前面由突出片27離開而放出至空氣中。由於突出片27的先端部與隔壁主體25的側面離隔,故可抑制鍍液沿著隔壁主體25的側面流下。The protruding piece 27 is extended from the upper end of the partition main body 25 toward the second space 19 side, and the tip end thereof is separated from the side surface of the partition main body 25 on the second space 19 side. By providing such a protruding piece 27, the plating liquid that has flowed into the second space 19 from the first space 17 is guided to the leading end portion along the protruding piece 27, and is separated from the front surface of the leading end portion by the protruding piece 27 to be released to the air. in. Since the tip end portion of the protruding piece 27 is spaced apart from the side surface of the partition wall main body 25, the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25.

於本實施形態,雖舉以第1隔壁21,具有如圖2A所示之突出片27之情形為例說明,惟亦可為具有如圖2B~圖2D所示之變形例之突出片27的形態,亦可為具有如圖2E及圖2F所示之變形例之突出片的形態。In the present embodiment, the first partition wall 21 has a protruding piece 27 as shown in FIG. 2A as an example, but may be a protruding piece 27 having a modification as shown in FIGS. 2B to 2D. The form may be in the form of a protruding piece having a modification as shown in FIGS. 2E and 2F.

於圖2B的變形例,突出片27,由隔壁主體25的上端向第2空間19側且向斜上方延設。該變形例之情形,亦與圖2A的形態同樣地,突出片27的先端部與隔壁主體25的側面離隔。因此,可能抑制鍍液沿著隔壁主體25的側面流下,惟與圖2A的形態相比,鍍液有較容易沿著突出片27的第2空間19側的面(下面)流下的趨勢。In the modification of FIG. 2B, the protruding piece 27 is extended from the upper end of the partition main body 25 toward the second space 19 side and obliquely upward. Also in the case of this modification, the tip end portion of the protruding piece 27 is spaced apart from the side surface of the partition wall main body 25, similarly to the embodiment of Fig. 2A. Therefore, it is possible to prevent the plating solution from flowing down along the side surface of the partition main body 25, but the plating liquid tends to flow down along the surface (lower surface) on the second space 19 side of the protruding piece 27 as compared with the embodiment of FIG. 2A.

於圖2C的變形例,突出片27,係由隔壁主體25的上端向第2空間19側且向斜下方延設。該變形例之情形亦與圖2A的形態同樣地,由於突出片27的先端部與隔壁主體25的側面離隔,故可抑制鍍液沿著隔壁主體25的側面流下。並且,由於突出片27向斜下方傾斜,故可大致防止鍍液流進突出片27的下面(內面)。此點圖2C的變形例較圖2A的形態更佳。In the modification of FIG. 2C, the protruding piece 27 is extended from the upper end of the partition main body 25 toward the second space 19 side and obliquely downward. Also in the case of this modification, as in the embodiment of FIG. 2A, since the tip end portion of the protruding piece 27 is spaced apart from the side surface of the partition wall main body 25, the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25. Further, since the protruding piece 27 is inclined obliquely downward, the plating solution can be substantially prevented from flowing into the lower surface (inner surface) of the protruding piece 27. At this point, the modification of FIG. 2C is better than the embodiment of FIG. 2A.

於圖2D的變形例,突出片27,具有由隔壁主體25上端向第2空間19側且向橫方向延伸的橫部27a及由該橫部27a的先端向下方延伸的縱部27b。該縱部27b的先端由隔壁主體25的側面離隔。該變形例之情形亦與圖2A的形態同樣地,由於突出片27的先端部與隔壁主體25的側面離隔,故可抑制鍍液沿著隔壁主體25的側面流下。In the modification of FIG. 2D, the protruding piece 27 has a lateral portion 27a extending in the lateral direction from the upper end of the partition main body 25 toward the second space 19, and a vertical portion 27b extending downward from the tip end of the lateral portion 27a. The tip end of the vertical portion 27b is separated from the side surface of the partition main body 25. Also in the case of this modification, as in the embodiment of FIG. 2A, since the tip end portion of the protruding piece 27 is spaced apart from the side surface of the partition wall main body 25, the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25.

並且,於該形態,由第1空間17流入第2空間19之鍍液,沿著橫部27a引導至其先端部後,沿著縱部27b向下方流下。該先端部,與隔壁主體25的側面的距離很大。因此,可大致預防鍍液流入突出片27的內面。在此點圖2D的變形例較圖2A的形態更佳。In this embodiment, the plating solution that has flowed into the second space 19 from the first space 17 is guided to the tip end portion along the lateral portion 27a, and then flows downward along the vertical portion 27b. The tip end portion has a large distance from the side surface of the partition main body 25. Therefore, it is possible to substantially prevent the plating solution from flowing into the inner surface of the protruding piece 27. At this point, the modification of FIG. 2D is better than the embodiment of FIG. 2A.

於圖2E及圖2F的變形例,第1隔壁21並不具有突出片。在圖2E的變形例,第1隔壁21係沿著垂直方向配置。於圖2F的變形例,第1隔壁21對垂直方向傾斜配置。該變形例的第1隔壁21係隨著由上方向下方位於下游側地傾斜。In the modification of FIGS. 2E and 2F, the first partition wall 21 does not have a protruding piece. In the modification of FIG. 2E, the first partition walls 21 are arranged along the vertical direction. In the modification of FIG. 2F, the first partition wall 21 is disposed to be inclined in the vertical direction. The first partition wall 21 of this modification is inclined on the downstream side from the upper direction to the lower side.

輸送側配管29,係其上游側的端部連接於溢出槽49之底部及槽本體47的側壁51之下部,與溢出槽49及槽本體47連通。輸送側配管29之下游側,設有對他槽15供給鍍液之供給口29a。The conveying-side pipe 29 is connected to the bottom of the overflow groove 49 and the lower portion of the side wall 51 of the groove body 47, and communicates with the overflow groove 49 and the groove body 47. On the downstream side of the conveying-side pipe 29, a supply port 29a for supplying plating liquid to the other tank 15 is provided.

如圖1及圖3A所示,供給口29a,係位於較第1空間17內的鍍液的液面為高之處,未與鍍液接觸。因此,由供給口29a吐出的鍍液,由供給口29a向下方流下與儲留於第1空間17內的鍍液接觸,則會對該鍍液造成某種程度的衝擊。藉此,多少會使第1空間17內的鍍液流動。As shown in FIG. 1 and FIG. 3A, the supply port 29a is located higher than the liquid level of the plating solution in the first space 17, and is not in contact with the plating solution. Therefore, the plating solution discharged from the supply port 29a flows downward from the supply port 29a and comes into contact with the plating solution stored in the first space 17, and the plating solution is somewhat impacted. Thereby, the plating solution in the first space 17 is caused to flow somewhat.

如圖3B~圖3E所示的變形例,回送側配管29之供給口29a,係位於較上述既定高度為下方之處。即,可為供給口29a位於較第1空間17內的鍍液的液面為下方之處而浸漬於鍍液之形態。於該等變形例,由供給口29a吐出的鍍液,將直接供給於儲留在第1空間17的鍍液的液中。藉此,可較由供給口29a一旦被吐出於空氣中的鍍液落入儲留於第1空間17的鍍液液面之圖3A之形態,減低對第1空間17之鍍液之衝擊。In the modification shown in FIG. 3B to FIG. 3E, the supply port 29a of the return-side pipe 29 is located below the predetermined height. In other words, the supply port 29a may be immersed in the plating solution at a position below the liquid level of the plating solution in the first space 17. In the above-described modifications, the plating solution discharged from the supply port 29a is directly supplied to the liquid stored in the plating solution in the first space 17. Thereby, the impact on the plating solution of the first space 17 can be reduced as compared with the embodiment of FIG. 3A in which the plating liquid discharged into the air from the supply port 29a falls into the plating liquid surface stored in the first space 17.

於圖3C之變形例,回送側配管29的下游側端部,被彎曲成鍍液由供給口29a吐出之方向朝他槽本體20之內側面20a。於該變形例,較鍍液的吐出方向朝下方的圖3B之形態,可抑制儲留於第1空間17之鍍液之流動,特別是位於下方側之鍍液之流動。In the modification of FIG. 3C, the downstream end portion of the return-side pipe 29 is bent so that the plating liquid is discharged from the supply port 29a toward the inner side surface 20a of the other groove body 20. In this modification, in the form of FIG. 3B in which the discharge direction of the plating solution is downward, the flow of the plating solution stored in the first space 17 can be suppressed, in particular, the flow of the plating solution located on the lower side.

於圖3D之變形例,輸送側配管29之下游側之端部分歧成多數(該變形例為六個),輸送側配管29,具有多數吐出鍍液之供給口29a。藉此,由各供給口29a吐出的鍍液的吐出速度變得較圖3B的變形例小。因此,可抑制儲留於第1空間17之鍍液之流動,特別是位於下方側之鍍液之流動。In the modification of Fig. 3D, the end portion on the downstream side of the conveying-side pipe 29 is plural (six in the modification), and the conveying-side pipe 29 has a plurality of supply ports 29a for discharging the plating solution. Thereby, the discharge speed of the plating solution discharged from each supply port 29a becomes smaller than the modification of FIG. 3B. Therefore, the flow of the plating solution stored in the first space 17 can be suppressed, in particular, the flow of the plating solution located on the lower side.

於圖3E之變形例,回送側配管29,具有其下游側的內徑較其他部位為大的構造。藉此,由供給口29a吐出之鍍液之吐出速度變得較圖3B的變形例小。因此,可抑制儲留於第1空間17之鍍液之流動,特別是位於下方側之鍍液之流動。In the modification of FIG. 3E, the return-side piping 29 has a structure in which the inner diameter on the downstream side is larger than the other portions. Thereby, the discharge speed of the plating solution discharged from the supply port 29a becomes smaller than the modification of FIG. 3B. Therefore, the flow of the plating solution stored in the first space 17 can be suppressed, in particular, the flow of the plating solution located on the lower side.

如圖1所示,回送側配管41,其上游側的端部連接於他槽本體20之側部,而與第2空間19連通。回送側配管41之下游側之端部,分歧成複數(於本實施形態是三個)。該等複數配管邊端部之中的二個端部41a、41b,分別與上述一對噴嘴61連接而分別與各個噴嘴61連通。複數配管端部之剩下的端部41c,連接於槽本體47之底部而與槽本體47之內部連通。該端部41c,係配置於與溢出槽49相反側之槽本體47的側面。As shown in FIG. 1, the return-side pipe 41 has its upstream end connected to the side of the groove body 20 and communicates with the second space 19. The end portion on the downstream side of the return-side pipe 41 is divided into plural numbers (three in the present embodiment). Two of the end portions 41a and 41b of the plurality of pipe end portions are connected to the pair of nozzles 61 and communicate with the respective nozzles 61. The remaining end portion 41c of the end portion of the plurality of pipes is connected to the bottom of the groove body 47 to communicate with the inside of the groove body 47. The end portion 41c is disposed on the side surface of the groove body 47 on the side opposite to the overflow groove 49.

在分歧處之更上游側之回送側配管41,裝有過濾器65。在該濾器65之更上游側之回送側配管41設有幫浦64。藉由驅動該幫浦64及上述之幫浦63,鍍液在鍍敷槽13及他槽15之間循環。過濾器65,可將鍍液過濾由鍍液分離鍍液中的各種異物。The return-side pipe 41 on the upstream side of the branch is provided with a filter 65. A pump 64 is provided on the return-side pipe 41 on the upstream side of the filter 65. The plating solution circulates between the plating tank 13 and the other tank 15 by driving the pump 64 and the above-described pump 63. The filter 65 filters the plating solution to separate various foreign matters in the plating solution from the plating solution.

鍍敷槽13與他槽15之浴量比(鍍敷槽13之容積:他槽15之容積)以0.1:1~30:1為佳,以0.3:1~10:1更佳。鍍敷槽13之容積對於他槽15之容積未滿0.1倍,則他槽15的尺寸變的過大而並不實用。另一方面,鍍敷槽13之容積對他槽15之容積超過30倍,則有溶存氧在於他槽15的調整能力不足之情形。The bath ratio of the plating tank 13 to the tank 15 (the volume of the plating tank 13: the volume of the tank 15) is preferably 0.1:1 to 30:1, more preferably 0.3:1 to 10:1. When the volume of the plating tank 13 is less than 0.1 times the volume of the groove 15, the size of the groove 15 becomes too large to be practical. On the other hand, if the volume of the plating tank 13 exceeds the volume of the tank 15 by more than 30 times, there is a case where the dissolved oxygen is insufficient in the adjustment ability of the tank 15.

循環量(轉),係以循環速度(公升/分)×60(分/時間)÷全浴量(公升)計算,對全浴量(循環電鍍裝置的鍍液之總量)以5~100轉,以10~80轉更佳。循環量未滿10轉,則有溶存氧在於他槽15的調整能力不足之情形。另一方面,循環量超過100轉,需要很大的循環幫浦或很多的循環幫浦而不實用。The circulation amount (rotation) is calculated by the circulation speed (liters/min) × 60 (minutes/time) ÷ the total bath amount (liters), and the total bath amount (the total amount of the plating solution of the circulating plating apparatus) is 5 to 100. Turn, 10 to 80 turns better. If the circulation amount is less than 10 revolutions, there is a case where the dissolved oxygen is insufficient in the adjustment ability of the tank 15. On the other hand, the circulation amount exceeds 100 rpm, which requires a large circulation pump or a lot of cycle pumps and is not practical.

作為鍍液使用例如硫酸銅鍍液等。該硫酸銅鍍液,係對成為銅源的硫酸銅加入既定量的硫酸者。於該硫酸銅鍍液,可按照必要添加各種添加劑。該添加劑,可舉例如被稱為光亮劑、平整劑、柔軟劑之促進劑或抑制劑等有機添加劑。作為該有機添加劑,可舉例如含氮有機化合物、含硫有機化合物、含氧有機化合物等。具體而言,含硫有機化合物,可舉例如選自由下述通式(1)~(4)之硫系化合物。As the plating solution, for example, a copper sulfate plating solution or the like is used. The copper sulfate plating solution is a method in which copper sulfate which is a copper source is added to a predetermined amount of sulfuric acid. For the copper sulfate plating solution, various additives may be added as necessary. The additive may, for example, be an organic additive such as a brightener, a leveling agent, a promoter of a softening agent, or an inhibitor. Examples of the organic additive include a nitrogen-containing organic compound, a sulfur-containing organic compound, and an oxygen-containing organic compound. Specifically, the sulfur-containing organic compound is, for example, a sulfur-based compound selected from the following general formulae (1) to (4).

H─S─(CH2 )a ─(O)b ─SO3 M (1)H─S─(CH 2 ) a ─(O) b ─SO 3 M (1)

(式中R1 、R2 及R3 係分別表示碳數1~5的烷基,M係表示氫原子或鹼金屬,a係表示1~8之整數,b、c及d係分別表示0或1。)(wherein R 1 , R 2 and R 3 each represent an alkyl group having 1 to 5 carbon atoms; M represents a hydrogen atom or an alkali metal; a represents an integer of 1 to 8, and b, c and d represent 0, respectively. Or 1.)

此外,作為含氮有機化合物,可使用習知者,可舉例如3級胺化合物、4級銨化合物等。作為含氧有機化合物,可使用習知者,可舉例如聚乙烯乙二醇等的聚醚系化合物等。Further, as the nitrogen-containing organic compound, a conventional one may be used, and examples thereof include a tertiary amine compound and a tertiary ammonium compound. As the oxygen-containing organic compound, a conventional one may be used, and examples thereof include a polyether compound such as polyethylene glycol.

硫酸銅鍍液的各成分,亦可將因連續進行電鍍銅而減少的部分按照需要添加補充液等補充。藉此,可連續地進行電鍍銅。此外,使用可溶性陽極時,亦可由該可溶性陽極補充銅離子。此外,使用不溶性陽極時,亦可於鍍敷槽13之外另外設置可供給銅離子的槽,由該槽對鍍敷槽補充銅離子。Each component of the copper sulfate plating solution may be supplemented by adding a replenishing liquid or the like as needed by continuously performing electroplating of copper. Thereby, copper plating can be continuously performed. In addition, when a soluble anode is used, copper ions can also be supplemented by the soluble anode. Further, when an insoluble anode is used, a groove for supplying copper ions may be additionally provided in addition to the plating tank 13, and the plating tank may be supplemented with copper ions.

其次,說明本實施形態之電鍍裝置11的動作。首先,在建浴時,於鍍敷槽13之槽本體47及溢出槽49,以及他槽15之第1空間17及第2空間19儲留既定量的鍍液。Next, the operation of the plating apparatus 11 of the present embodiment will be described. First, at the time of the bath construction, a predetermined amount of plating solution is stored in the tank main body 47 and the overflow tank 49 of the plating tank 13, and the first space 17 and the second space 19 of the other tank 15.

接著,驅動幫浦63及幫浦64使鍍液在鍍敷槽13與他槽15之間循環。溢出槽49及第2空間19的液面水準,可藉由控制幫浦63及幫浦64的驅動或停止調節。以此狀態,將被鍍物陰極57浸漬於槽本體47的鍍浴,於陽極55與陰極57之間通電。藉此,於被鍍物電鍍銅。被鍍物鍍敷結束則與其他者交換依序進行電鍍銅。Next, the pump 63 and the pump 64 are driven to circulate the plating solution between the plating tank 13 and the tank 15. The liquid level of the overflow tank 49 and the second space 19 can be adjusted by controlling the driving or stopping of the pump 63 and the pump 64. In this state, the substrate cathode 57 is immersed in the plating bath of the tank body 47, and is energized between the anode 55 and the cathode 57. Thereby, copper is electroplated on the object to be plated. When the plating is finished, the other ones exchange the copper plating in sequence.

其次,說明鍍液之流向。當驅動幫浦64,則透過回送側配管41對槽本體47內提供鍍液。對該槽本體47提供鍍液,則與供給之液量相同份量的鍍液越過槽本體47的側壁51的上緣部53流入溢出槽49。Next, the flow direction of the plating solution will be described. When the pump 64 is driven, the plating liquid is supplied into the tank body 47 through the return-side piping 41. When the plating liquid is supplied to the tank main body 47, the plating liquid having the same amount as the supplied liquid amount flows into the overflow tank 49 beyond the upper edge portion 53 of the side wall 51 of the tank body 47.

此外,驅動幫浦63,則溢出槽49及槽本體47內的鍍液透過輸送側配管29對他槽15之第1空間17供給。於鍍液中,有起因於例如由陰極57脫落或在可溶性陽極產生的殘渣而產生的銅粒子等的異物浮游。於他槽15之第1空間17,密度較鍍液大的銅粒子將沉降而沉澱在第1空間17的底部。Further, when the pump 63 is driven, the plating liquid in the overflow tank 49 and the tank body 47 is supplied to the first space 17 of the tank 15 through the transport-side piping 29. In the plating solution, foreign matter floating due to, for example, copper particles generated by the cathode 57 falling off or the residue generated in the soluble anode may occur. In the first space 17 of the groove 15, the copper particles having a higher density than the plating solution settle and settle in the bottom of the first space 17.

另一方面,透過送側配管29對第1空間17供給鍍液,則與供給之液量相同份量的鍍液越過第1隔壁21的上緣部23流入第2空間19。流入第2空間19的鍍液,在第2空間19流下空氣中之後,到達儲留於第2空間19的鍍液之液面。藉由鍍液如此地流下時暴露於空氣,而調整鍍液的溶存氧濃度。具體而言,作為陽極使用可溶性陽極55時,藉由鍍敷時將空氣中的氧取入鍍液,可抑制鍍液的溶存氧濃度的下降。另一方面,作為陽極使用不溶性陽極時,藉由鍍敷時適度地將氧由鍍液釋放到空氣中,可抑制鍍液的溶存氧濃度的上升。On the other hand, when the plating solution is supplied to the first space 17 through the delivery-side piping 29, the plating solution having the same amount as the supplied liquid amount flows into the second space 19 beyond the upper edge portion 23 of the first partition wall 21. The plating solution that has flowed into the second space 19 flows into the air in the second space 19, and then reaches the liquid surface of the plating solution stored in the second space 19. The concentration of dissolved oxygen in the plating solution is adjusted by exposure to air when the plating solution flows down in this manner. Specifically, when the soluble anode 55 is used as the anode, oxygen in the air is taken into the plating solution by plating, and the decrease in the dissolved oxygen concentration of the plating solution can be suppressed. On the other hand, when an insoluble anode is used as the anode, oxygen is appropriately released from the plating solution into the air during plating, and an increase in the dissolved oxygen concentration of the plating solution can be suppressed.

溶存氧濃度,可藉由改變鍍液流下空氣中的時間,流下空氣中時與空氣的接觸表面積等調整。鍍液流下空氣中的時間,流下空氣中時與空氣的接觸表面積,可藉由改變例如第1隔壁21的上緣部23與第2空間19內的鍍液液面的距離,改變鍍液溢出之上緣部23的寬度而調節。The dissolved oxygen concentration can be adjusted by changing the time in which the plating solution flows down the air, and the surface area of contact with the air when flowing down the air. The time during which the plating solution flows down the air and the surface area of contact with the air when flowing down the air can change the plating solution overflow by changing, for example, the distance between the upper edge portion 23 of the first partition wall 21 and the liquid level in the second space 19. The width of the upper edge portion 23 is adjusted.

在於鍍敷槽13之槽本體47之鍍液的溶存氧濃度,以4~20mg/升為佳。溶存氧濃度未滿4mg/升或超過20mg/升,則有鍍敷品質下降之虞。具體而言,例如有鍍敷披膜的延伸率、抗張力等的披膜物性下降,或在於印刷電路板之通孔的均一性(TP)下降,導通孔的填孔性下降(凹陷量變大)之情形。The concentration of dissolved oxygen in the plating solution of the tank body 47 of the plating tank 13 is preferably 4 to 20 mg/liter. When the dissolved oxygen concentration is less than 4 mg/liter or exceeds 20 mg/liter, the plating quality is lowered. Specifically, for example, the coating properties such as the elongation of the plating film and the tensile strength are lowered, or the uniformity (TP) of the through holes of the printed circuit board is lowered, and the hole filling property of the via hole is decreased (the amount of the depression is increased) The situation.

於本實施形態,由於如上所述地第1空間17的鍍液溢出而流入第2空間19,故藉由如此之溢出之鍍液的流下將空氣捲入鍍液。藉此,可使鍍液中的溶存氧濃度接近飽和溶存氧濃度。空氣,係以氧(約20%)及氮(約80%)為主要的成分。此外,作為基準,例如25℃的水的飽和溶存氧濃度約為8.1mg/升。鍍液中的溶存氧濃度較上述較佳的範圍(4~20mg/升)小時,藉由溢出使鍍液流下而使空氣中的氧溶入鍍液中,使鍍液中的溶存氧濃度接近飽和溶存氧濃度。藉此,可容易地將鍍液中的溶存氧濃度調整在上述較佳的範圍。另一方面,鍍液中的溶存氧濃度較上述較佳的範圍大時,藉由溢出使鍍液流下而使溶入鍍液中的氧的一部分,因空氣中之氮的影響而適當地釋出於空氣中,使鍍液中的溶存氧濃度接近飽和溶存氧濃度。藉此,可將鍍液中的溶存氧濃度調整為上述較佳的範圍。In the present embodiment, since the plating solution in the first space 17 overflows and flows into the second space 19 as described above, air is entangled in the plating solution by the flow of the plating liquid thus overflowed. Thereby, the dissolved oxygen concentration in the plating solution can be made close to the saturated dissolved oxygen concentration. Air is mainly composed of oxygen (about 20%) and nitrogen (about 80%). Further, as a reference, for example, a saturated dissolved oxygen concentration of water at 25 ° C is about 8.1 mg / liter. When the concentration of dissolved oxygen in the plating solution is smaller than the above preferred range (4 to 20 mg/liter), the oxygen in the air is dissolved in the plating solution by overflowing the plating solution, so that the dissolved oxygen concentration in the plating solution is close to Saturated dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the plating solution can be easily adjusted to the above preferred range. On the other hand, when the dissolved oxygen concentration in the plating solution is larger than the above preferred range, a part of the oxygen dissolved in the plating solution is caused to flow down by the overflow of the plating solution, and is appropriately released by the influence of nitrogen in the air. In the air, the dissolved oxygen concentration in the plating solution is close to the saturated dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the plating solution can be adjusted to the above preferred range.

第1隔壁21的上緣部23與第2空間19內的鍍液液面的距離(落差),並無特別限定,可有效地調整溶存氧濃度之點,以10cm以上為佳,以15cm以上更佳。此外,為了避免他槽15尺寸變的過大落差以100cm以下為佳。The distance (difference) between the upper edge portion 23 of the first partition wall 21 and the plating liquid surface in the second space 19 is not particularly limited, and the concentration of dissolved oxygen concentration can be effectively adjusted, preferably 10 cm or more, and 15 cm or more. Better. Further, in order to avoid an excessively large difference in the size of the groove 15 thereof, it is preferably 100 cm or less.

此外,於本實施形態,例示於他槽15內設置1隔壁,僅使鍍液溢出一次之構成,惟亦可如後所述藉由在他槽本體內設置複數隔壁,使在於他槽15的溢出次數為複數次。在可提高溶存氧濃度的調整效率之點,在於他槽15的溢出次數以2次以上為佳。此外,為避免他槽15尺寸變的過大,溢出次數以5次以下為佳。Further, in the present embodiment, a partition wall is provided in the other groove 15 and only the plating solution is once overflowed. However, a plurality of partition walls may be provided in the tank body as will be described later. The number of overflows is plural. In order to increase the adjustment efficiency of the dissolved oxygen concentration, it is preferable that the number of overflows of the tank 15 is two or more. Further, in order to prevent the size of the groove 15 from becoming too large, the number of overflows is preferably 5 or less.

如以上所說明在第1實施形態,於上述他槽15,鍍液之中超過上述既定高度的部分從第1空間17流入第2空間19,既定高度以下的部分則停留在第1空間17內。因此,可使停留在該第1空間17的鍍液中的金屬粒子沉降在第1空間17的下方。只要如此地將金屬粒子沉降集中在第1空間17的下方,則可藉由實施回收手段定期地將該等金屬粒子回收,可有效地將鍍液中的金屬粒子去除。藉此,在於電鍍裝置11,可降低過濾器65的交換頻率,依情形甚至可省略過濾器65。此外,使第1空間17內的鍍液之中超過上述既定高度的部分流入第2空間19使之於該第2空間19在空氣中流下,即藉由使流動狀態的鍍液暴露於空氣可調整鍍液的溶存氧濃度。因此,根據第1實施形態,可調整鍍液的溶存氧濃度的同時,可減低起因於交換過濾器的成本。As described above, in the first embodiment, the portion of the plating solution that exceeds the predetermined height flows into the second space 19 from the first space 17, and the portion below the predetermined height stays in the first space 17. . Therefore, the metal particles remaining in the plating solution in the first space 17 can be settled below the first space 17. As long as the metal particles are concentrated and settled below the first space 17, the metal particles can be periodically removed by performing a recovery means, and the metal particles in the plating solution can be effectively removed. Thereby, in the plating apparatus 11, the frequency of exchange of the filter 65 can be lowered, and the filter 65 can be omitted even in the case. Further, a portion of the plating solution in the first space 17 that exceeds the predetermined height flows into the second space 19 so that the second space 19 flows down in the air, that is, by exposing the plating solution in a flowing state to the air. Adjust the dissolved oxygen concentration of the plating solution. Therefore, according to the first embodiment, the dissolved oxygen concentration of the plating solution can be adjusted, and the cost due to the exchange filter can be reduced.

具體而言,使用可溶性陽極作為陽極時,由於在鍍敷時將空氣中的氧取入鍍液,故可抑制鍍液的溶存氧濃度的下降。另一方面,使用不溶性陽極作為陽極時,由於鍍敷時由鍍液將氧釋放到空氣中,故可抑制鍍液的溶存氧濃度的上升。Specifically, when a soluble anode is used as the anode, since oxygen in the air is taken into the plating solution during plating, a decrease in the dissolved oxygen concentration of the plating solution can be suppressed. On the other hand, when an insoluble anode is used as the anode, since oxygen is released into the air by the plating solution during plating, an increase in the dissolved oxygen concentration of the plating solution can be suppressed.

此外,於第1實施形態,緣部23,僅向於第2空間19側延設,並且,其先端部具有與第1隔壁21之側面離隔的突出片27。因此,由第1空間17流入第2空間19的鍍液沿著突出片27引導至該先端部,由該先端部之前端由突出片27離開放出至空氣中。因此,於第1實施形態,可抑制鍍液沿著第1隔壁21的側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面積,故可更有效地進行鍍液的溶存氧濃度之調整。Further, in the first embodiment, the edge portion 23 is extended only toward the second space 19 side, and the tip end portion has the protruding piece 27 spaced apart from the side surface of the first partition wall 21. Therefore, the plating solution that has flowed into the second space 19 from the first space 17 is guided to the tip end portion along the protruding piece 27, and the front end portion of the tip end portion is opened and released into the air by the protruding piece 27. Therefore, in the first embodiment, it is possible to suppress the plating solution from flowing down along the side surface of the first partition wall 21. Thereby, since the contact area with air at the time of the plating liquid flow can be increased, the adjustment of the dissolved oxygen concentration of the plating liquid can be performed more effectively.

<第2實施形態><Second embodiment>

圖4係表示關於本發明之第2實施形態之電鍍裝置11之他槽15之構成圖。於該第2實施形態,他槽15之第1空間17的構造與第1實施形態不同。再者,在此對與第1實施形態相同的構成要素賦予相同的符號,省略其詳細說明。Fig. 4 is a view showing the configuration of the other groove 15 of the plating apparatus 11 according to the second embodiment of the present invention. In the second embodiment, the structure of the first space 17 of the groove 15 is different from that of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖4所示,他槽15加上他槽本體20及第1隔壁21,進一步具有第2隔壁35。該第2隔壁35,呈略矩形狀,由他槽本體20的底面向上方立設。第2隔壁35,將第1空間17的內部分成兩個空間。一邊的空間係由輸送側配管29之供給口29a供給鍍液之供給空間33,另一邊的空間,位於供給空間33的下流側,使鍍液中的金屬粒子32沉降之沉降空間31。As shown in FIG. 4, the other groove 15 is provided with the groove main body 20 and the first partition wall 21, and further has a second partition wall 35. The second partition wall 35 has a substantially rectangular shape and is erected upward from the bottom surface of the groove main body 20. The second partition wall 35 divides the inside of the first space 17 into two spaces. The space on one side is supplied to the supply space 33 of the plating solution by the supply port 29a of the delivery-side pipe 29, and the space on the other side is located on the downstream side of the supply space 33, and the sedimentation space 31 in which the metal particles 32 in the plating solution are settled.

第2隔壁35,具有連通沉降空間31與供給空間33之複數連通口。該等連通口,係設於較上述既定高度,即第1隔壁21的上緣部23的高度為下方。在於第1空間17內,鍍液可透過上述複數連通口由供給空間33移至沉降空間31。作為第2隔壁35,可使用例如,大致全面以既定間隔排列複數貫通口之金屬板、樹脂板等。連通口調整為至少可使金屬粒子透過的大小。The second partition wall 35 has a plurality of communication ports that communicate the settling space 31 and the supply space 33. The communication ports are provided below the predetermined height, that is, the height of the upper edge portion 23 of the first partition wall 21 is below. In the first space 17, the plating solution can be moved from the supply space 33 to the settling space 31 through the plurality of communication ports. As the second partition wall 35, for example, a metal plate or a resin plate in which a plurality of through holes are arranged at substantially regular intervals can be used. The communication port is adjusted to a size at which the metal particles can be transmitted.

於第2實施形態,第1空間17,以第2隔壁35分成沉降空間31與供給空間33,由輸送側配管29之供給口29a對供給空間33供給鍍液。因此,即使在供給鍍液時儲留在供給空間33的鍍液流動,該流動不易傳到沉降空間31。因此,與於第1空間17沒有設置第2隔壁35之情形相比,可使金屬粒子32更有效地沉降。In the second embodiment, the first space 17 is divided into the sedimentation space 31 and the supply space 33 by the second partition wall 35, and the plating solution is supplied to the supply space 33 by the supply port 29a of the transport-side pipe 29. Therefore, even if the plating solution stored in the supply space 33 flows while the plating solution is supplied, the flow is not easily transmitted to the settling space 31. Therefore, the metal particles 32 can be more effectively settled than in the case where the second partition wall 35 is not provided in the first space 17.

此外,於第2實施形態,第2隔壁35,具有設於較上述既定高度為下方,連通沉降空間31與供給空間33之複數連通口。因此,供給於供給空間33之鍍液,可透過第2隔壁35的複數連通口分散移至沉降空間31。藉由鍍液如此地透過複數的連通口分散流入沉降空間31可抑制儲留於沉降空間31的鍍液之流動。Further, in the second embodiment, the second partition wall 35 has a plurality of communication ports that are provided below the predetermined height and that communicate the settling space 31 and the supply space 33. Therefore, the plating solution supplied to the supply space 33 can be dispersed and moved to the sedimentation space 31 through the plurality of communication ports of the second partition wall 35. By allowing the plating solution to be dispersed into the sedimentation space 31 through the plurality of communication ports, the flow of the plating solution stored in the sedimentation space 31 can be suppressed.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第3實施形態><Third embodiment>

圖5係表示關於本發明第3實施形態之電鍍裝置11之他槽15之構成圖。於該第3實施形態,他槽15之第1空間17的構造與第1實施形態及第2實施形態不同。再者,在此與第1實施形態相同的構成要素賦予相同的符號,省略其詳細說明。Fig. 5 is a view showing the configuration of the other tank 15 of the plating apparatus 11 according to the third embodiment of the present invention. In the third embodiment, the structure of the first space 17 of the groove 15 is different from that of the first embodiment and the second embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖5所示,他槽15,加上他槽本體20及第1隔壁21,進一步具有第2隔壁35。該第2隔壁35,呈略矩形狀,與上述第2實施形態同樣地,由他槽本體20的底面向上方立設。第2隔壁35,將第1空間17的內部分成供給空間33及沉降空間31。與第2實施形態不同的地方是第3實施形態的第2隔壁35並沒有設置複數的連通口。As shown in FIG. 5, the groove 15 is provided with the groove main body 20 and the first partition wall 21, and further has a second partition wall 35. The second partition wall 35 has a substantially rectangular shape, and is vertically erected from the bottom surface of the groove main body 20 as in the second embodiment. The second partition wall 35 divides the inside of the first space 17 into the supply space 33 and the settling space 31. The difference from the second embodiment is that the second partition wall 35 of the third embodiment does not have a plurality of communication ports.

於該第3實施形態,由於第2隔壁35的上緣部35a位於較上述既定高度為下方之處,故第2隔壁35的上緣部35a的高度位於較儲留於沉降空間31的鍍液的液面之下方。藉此,在於第1空間17內之鍍液,可超過第2隔壁35的上緣部35a由供給空間33移至沉降空間31。In the third embodiment, since the upper edge portion 35a of the second partition wall 35 is located below the predetermined height, the height of the upper edge portion 35a of the second partition wall 35 is located in the plating solution stored in the settling space 31. Below the liquid level. Thereby, the plating liquid in the first space 17 can be moved from the supply space 33 to the sedimentation space 31 beyond the upper edge portion 35a of the second partition wall 35.

因此,在第3實施形態,由於具有第2隔壁35,故鍍液由供給口29a供給於供給空間33時之流動不易傳到沉降空間31。並且,由於鍍液越過第2隔壁35的上緣部35a由供給空間33流入沉降空間31,故可抑制將沉降在沉降空間下方的金屬粒子32捲起之情形。Therefore, in the third embodiment, since the second partition wall 35 is provided, the flow of the plating solution when it is supplied to the supply space 33 by the supply port 29a is less likely to be transmitted to the settling space 31. Further, since the plating solution flows into the sedimentation space 31 from the supply space 33 beyond the upper edge portion 35a of the second partition wall 35, it is possible to suppress the rolling up of the metal particles 32 that have settled under the sedimentation space.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第4實施形態><Fourth embodiment>

圖6係表示關於本發明第4實施形態之電鍍裝置11之構成圖。於該第4實施形態,設有再供給配管43之點與第1實施形態不同。再者,在此與第1實施形態相同的構成要素賦予同樣的符號,省略其詳細說明。Fig. 6 is a view showing the configuration of a plating apparatus 11 according to a fourth embodiment of the present invention. In the fourth embodiment, the point at which the resupply pipe 43 is provided is different from that of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖6所示,於該第4實施形態,電鍍裝置11進一步包括將他槽15所排出之鍍液送回第1空間17之再供給配管43。該再供給配管43之一端43a,與連接於他槽本體20之側部之下部之第2空間19連通。另一端43b,配置於第1空間17的上部。於再供給配管43設有幫浦66及過濾器68。As shown in Fig. 6, in the fourth embodiment, the plating apparatus 11 further includes a resupply pipe 43 for returning the plating liquid discharged from the tank 15 to the first space 17. One end 43a of the resupply pipe 43 communicates with the second space 19 connected to the lower portion of the side portion of the tank body 20. The other end 43b is disposed at an upper portion of the first space 17. A pump 66 and a filter 68 are provided in the resupply pipe 43.

因此,於第4實施形態,將在於他槽15之第2空間19之鍍液之一部分,送回鍍敷槽13之前,可透過再供給配管43再度對第1空間17供給。可進一步有效地去除鍍液中的異物。Therefore, in the fourth embodiment, a part of the plating solution in the second space 19 of the other tank 15 is returned to the plating tank 13 and can be supplied to the first space 17 again through the resupply pipe 43. The foreign matter in the plating solution can be further effectively removed.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第5實施形態><Fifth Embodiment>

圖7係表示關於本發明第5實施形態之電鍍裝置11之構成圖。於該第5實施形態,於第2空間19內配設有下溢用隔板45之點與第1實施形態不同。再者,在此與第1實施形態相同的構成要素賦予同樣的符號,省略其詳細說明。Fig. 7 is a view showing the configuration of a plating apparatus 11 according to a fifth embodiment of the present invention. In the fifth embodiment, the point at which the underflow partition 45 is disposed in the second space 19 is different from that of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖7所示,於該第5實施形態,於在於較第1空間17為下游側之第2空間19進一步包括隔板45。該隔板45,係於第2空間19內,於隔板45的下端邊與他槽本體20的底側之間設有縫隙,並且在較該縫隙為上方係將第2空間19隔成上游側區域與下游側區域二個區域地配設之板狀體。因此,由第1空間17流入第2空間19之鍍液,在於第2空間19內由上述上游側區域移至上述下游側區域時必定通過上述縫隙。因此,第2空間19內的鍍液,可更均勻地攪拌。As shown in FIG. 7, in the fifth embodiment, the second space 19 on the downstream side of the first space 17 further includes a partition plate 45. The partition plate 45 is disposed in the second space 19, and is provided with a gap between the lower end side of the partition plate 45 and the bottom side of the groove main body 20, and the second space 19 is vertically formed above the slit. A plate-like body disposed in two regions of the side region and the downstream region. Therefore, the plating solution that has flowed into the second space 19 from the first space 17 passes through the slit when the upstream space is moved to the downstream side region in the second space 19. Therefore, the plating solution in the second space 19 can be more uniformly stirred.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第6實施形態><Sixth embodiment>

圖8A及圖8B係表示關於本發明第6實施形態之電鍍裝置11之鍍敷槽13的一部分之構成圖、圖8A係將鍍敷槽13之一部分由側邊所視之圖,圖8B係將此由上方所視之圖。於該第6實施形態,鍍敷槽13之溢出槽49之構造與第1實施形態不同。再者,在此與第1實施形態相同的構成要素賦予同樣的符號,省略其詳細說明。8A and 8B are views showing a part of the plating tank 13 of the plating apparatus 11 according to the sixth embodiment of the present invention, and Fig. 8A is a view showing a part of the plating tank 13 from the side, and Fig. 8B is a view. Take this picture from the top. In the sixth embodiment, the structure of the overflow groove 49 of the plating tank 13 is different from that of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖8A及圖8B所示,於該第6實施形態,鍍敷槽13之溢出槽49,於內部具有上游側空間71及較該上游側空間71位於下游側的下游側空間73。溢出槽49,係以兩個槽(第1槽75及第2槽77)所構成。上游側空間71,係以第1槽75與槽本體47的側壁51所包圍的空間,下游側空間73係以第2槽77與槽本體47的側壁51所包圍的空間。As shown in FIG. 8A and FIG. 8B, in the sixth embodiment, the overflow groove 49 of the plating tank 13 has an upstream side space 71 and a downstream side space 73 located on the downstream side of the upstream side space 71. The overflow tank 49 is composed of two grooves (the first groove 75 and the second groove 77). The upstream side space 71 is a space surrounded by the first groove 75 and the side wall 51 of the groove body 47, and the downstream side space 73 is a space surrounded by the second groove 77 and the side wall 51 of the groove body 47.

槽本體47的側壁51的上緣部53、第1槽75的上緣部、及第2槽77的上緣部之中,第2槽77最高,第1槽75最低。如圖8B所示,於第1槽75的上緣部,設有一對溢出部81。該等溢出部81,為使鍍液溢出由第1槽75流入第2槽77,較其他的部位更低。於第2槽77的底側設有連接輸送側配管29之貫通口79。Among the upper edge portion 53 of the side wall 51 of the groove body 47, the upper edge portion of the first groove 75, and the upper edge portion of the second groove 77, the second groove 77 is the highest, and the first groove 75 is the lowest. As shown in FIG. 8B, a pair of overflow portions 81 are provided at the upper edge portion of the first groove 75. The overflow portion 81 is made to flow into the second groove 77 from the first groove 75 so that the plating solution overflows, which is lower than other portions. A through port 79 that connects the delivery-side pipe 29 is provided on the bottom side of the second groove 77.

藉此,鍍液將溢出槽本體47的側壁51的上緣部53流入第1槽75的上游側空間71,進一步溢出第1槽75的上緣部流入第2槽77的下游側空間73,通過貫通口79流入輸送側配管29。如此地於第6實施形態,係鍍液在空氣中流下2次之構造。因此,不僅在他槽15,於鍍敷槽13的溢出槽49,亦可進行鍍液溶存氧濃度之調整。As a result, the plating solution flows into the upstream side space 71 of the first groove 75 in the upper edge portion 53 of the side wall 51 of the overflow tank body 47, and further overflows the upper edge portion of the first groove 75 into the downstream side space 73 of the second groove 77. The through-port 79 flows into the transport-side pipe 29 . As described above, in the sixth embodiment, the plating solution is allowed to flow twice in the air. Therefore, not only in the tank 15, but also in the overflow tank 49 of the plating tank 13, the concentration of dissolved oxygen in the plating solution can be adjusted.

特別是在於第6實施形態,藉由使第1槽75的上緣部到第2槽77之液面的落差大到10cm以上,使鍍液由上游側空間71流入下游側空間73在空氣中流下時更有效地調整溶存氧濃度。In particular, in the sixth embodiment, the plating liquid is caused to flow from the upstream side space 71 into the downstream side space 73 in the air by making the liquid level difference between the upper edge portion of the first groove 75 and the second groove 77 larger than 10 cm. The dissolved oxygen concentration is more effectively adjusted when flowing down.

此外,槽本體47的側壁51的上緣部53,具有與圖2所示者相同的突出片為佳。第1槽75的上緣部亦同樣地具有與圖2所示者相同的突出片為佳。如此地上緣部具有突出片時,由槽本體47流入第1槽75之鍍液,及由第1槽75流入第2槽77之鍍液,沿著突出片引導至其先端部,由該先端部之前端由突出片27離開放出至空氣中。因此,可抑制鍍液沿著槽本體的側面或第1槽75的側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面積,故可更有效地進行鍍液溶存氧濃度之調整。Further, it is preferable that the upper edge portion 53 of the side wall 51 of the groove body 47 has the same protruding piece as that shown in Fig. 2 . Similarly, the upper edge portion of the first groove 75 preferably has the same protruding piece as that shown in Fig. 2 . When the upper edge portion has the protruding piece, the plating liquid that has flowed into the first groove 75 from the groove body 47 and the plating liquid that has flowed into the second groove 77 from the first groove 75 are guided to the tip end portion along the protruding piece, and the tip end is The front end of the portion is separated from the air by the protruding piece 27. Therefore, it is possible to suppress the plating solution from flowing down along the side surface of the groove body or the side surface of the first groove 75. Thereby, since the contact area with the air at the time of flowing the plating liquid can be increased, the adjustment of the dissolved oxygen concentration in the plating solution can be performed more effectively.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第7實施形態><Seventh embodiment>

圖9A及圖9B係表示關於本發明第7實施形態之電鍍裝置11之鍍敷槽13之一部分之構成圖、圖9A係將鍍敷槽13之一部分由側邊所視之圖,圖9B係將此由上方所視之圖。於該第7實施形態,鍍敷槽13之溢出槽49之構造與第1實施形態不同,而第1槽75的構造與第6實施形態不同。再者,在此與第1實施形態及第6實施形態相同的構成要素賦予同樣的符號,省略其詳細說明。9A and 9B are views showing a configuration of a portion of the plating tank 13 of the plating apparatus 11 according to the seventh embodiment of the present invention, and Fig. 9A is a view of a portion of the plating tank 13 as viewed from the side, and Fig. 9B is a view. Take this picture from the top. In the seventh embodiment, the structure of the overflow groove 49 of the plating tank 13 is different from that of the first embodiment, and the structure of the first groove 75 is different from that of the sixth embodiment. The same components as those in the first embodiment and the sixth embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖9A及圖9B所示,於該第7實施形態,第1槽75於其底面具有貫通口85,於該等貫通口85分別連接吐出管83。上游側空間71內的鍍液透過該等吐出管83,流下空氣中流入下游側空間73。第1槽75的底部係配置在較第2槽77的底部為上方。吐出管83可省略。As shown in FIG. 9A and FIG. 9B, in the seventh embodiment, the first groove 75 has a through hole 85 at its bottom surface, and the discharge pipe 83 is connected to each of the through holes 85. The plating solution in the upstream side space 71 passes through the discharge pipes 83, and flows into the downstream side space 73 through the flowing air. The bottom of the first groove 75 is disposed above the bottom of the second groove 77. The discharge tube 83 can be omitted.

此外其他的構成、作用以及效果省略其說明,但是和上述第1實施形態相同。The other configurations, operations, and effects are omitted, but are the same as those in the first embodiment.

<第8實施形態><Eighth Embodiment>

圖10係表示關於本發明第8實施形態之電鍍裝置11之構成圖。於該第8實施形態,在於他槽15的溢出次數為2次之點與第1實施形態不同。再者,在此與第1實施形態相同的構成要素賦予同樣的符號,省略其詳細說明。Fig. 10 is a view showing the configuration of a plating apparatus 11 according to an eighth embodiment of the present invention. In the eighth embodiment, the number of overflows of the groove 15 is two, which is different from the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.

如圖10所示,於該第8實施形態,他槽15進一步具有第3隔壁91。該第3隔壁91,係呈略矩形狀,由他槽本體20的底面向上方立設。他槽15之內部,藉由該第3隔壁91分成第2空間19及位於較該第2空間19下游側之第3空間93。藉此,可更加有效地調整鍍液的溶存氧濃度。As shown in Fig. 10, in the eighth embodiment, the groove 15 further has a third partition wall 91. The third partition wall 91 has a substantially rectangular shape and is erected upward from the bottom surface of the groove main body 20. The inside of the groove 15 is divided into a second space 19 and a third space 93 located on the downstream side of the second space 19 by the third partition wall 91. Thereby, the dissolved oxygen concentration of the plating solution can be more effectively adjusted.

此外,於該第8實施形態,在較使金屬粒子沉降的第1空間17為下游側之第2空間19及第3空間93進一步包括下溢用隔板45。與圖7之第5實施形態同樣地,該等隔板45,係在於第2空間19及第3空間93內,於隔板45之下端邊與他槽本體20之底面之間分別設置縫隙的同時,在較該等縫隙為上方,將第2空間19隔成上游側的區域及下游側的區域之二個區域,將第3空間93隔成上游側的區域及下游側的區域之二個區域地配置之板狀體。因此,由第1空間17流入第2空間19之鍍液,於第2空間19內由上述上游側區域移至上述下游側區域時必定通過上述縫隙。由第2空間19流入第3空間93之鍍液,由於在第3空間93內由上述上游側區域移至上述下游側區域時必定通過上述縫隙,故可將第2空間19及第3空間93之鍍液更均勻地攪拌。Further, in the eighth embodiment, the second space 19 and the third space 93 on the downstream side of the first space 17 in which the metal particles have settled further include the underflow partition plate 45. Similarly to the fifth embodiment of Fig. 7, the partition plates 45 are provided in the second space 19 and the third space 93, and gaps are provided between the lower end of the partition plate 45 and the bottom surface of the groove body 20, respectively. At the same time, the second space 19 is partitioned into two regions of the upstream side and the downstream side, and the third space 93 is partitioned into the upstream side and the downstream side. The plate body is arranged regionally. Therefore, the plating solution that has flowed into the second space 19 from the first space 17 passes through the slit when the upstream side region is moved to the downstream side region in the second space 19. The plating solution that has flowed into the third space 93 from the second space 19 passes through the slit when moving from the upstream side region to the downstream side region in the third space 93, so that the second space 19 and the third space 93 can be provided. The plating solution is stirred more uniformly.

第3隔壁91之上緣部24,具有與第1隔壁21之上緣部23相同的構造。即,第3隔壁91之上緣部24,由於具有如第1隔壁21之上緣部23之突出片27,故由第2空間19流入第3空間93之鍍液,沿著突出片27引導至其先端部,由其先端部之前端離開突出片27放出於空氣中。故,可抑制鍍液沿著第3隔壁91的側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面積,故可更有效地進行調整鍍液的溶存氧濃度。The upper edge portion 24 of the third partition wall 91 has the same structure as the upper edge portion 23 of the first partition wall 21. In other words, since the upper edge portion 24 of the third partition wall 91 has the protruding piece 27 as the upper edge portion 23 of the first partition wall 21, the plating liquid that has flowed into the third space 93 from the second space 19 is guided along the protruding piece 27. To the tip end portion, the front end portion of the tip end portion is separated from the protruding piece 27 and placed in the air. Therefore, it is possible to suppress the plating solution from flowing down along the side surface of the third partition wall 91. Thereby, since the contact area with the air at the time of the plating liquid flow can be increased, the dissolved oxygen concentration of the plating solution can be more effectively adjusted.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<第9實施形態><Ninth Embodiment>

圖11A及圖11B係表示關於第9實施形態之電鍍裝置之他槽之第1隔壁21之圖。於該第9實施形態,並非如上所述實施形態鍍液溢出第1隔壁21的上緣部23,而是鍍液通過設於第1隔壁21之上述既定高度之貫通口95,由第1空間17流入第2空間19之構造。Figs. 11A and 11B are views showing the first partition wall 21 of the other tank of the plating apparatus according to the ninth embodiment. In the ninth embodiment, the plating solution does not overflow the upper edge portion 23 of the first partition wall 21 as described above, but the plating solution passes through the through hole 95 provided at the predetermined height of the first partition wall 21, and the first space is provided. 17 is configured to flow into the second space 19.

於該第9實施形態,鍍液由第1空間17流入第2空間19流時,亦可沿著第1隔壁21之側面流下,惟不沿著第1隔壁21之側面流下較佳。例如,如圖11B所示,第1隔壁21,以具有由位於第2空間19側之側面之貫通口95之下緣部向橫方向突出的突出片95a為佳。此時,由第1空間17流入第2空間19之鍍液沿著突出片95a引導至其先端部,由其先端部之前端離開突出片95a放出至空氣中。因此,可抑制鍍液沿著第1隔壁21的側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面積,故可更有效地進行調整鍍液的溶存氧濃度。In the ninth embodiment, when the plating solution flows into the second space 19 from the first space 17, it may flow down along the side surface of the first partition wall 21, but it is preferable not to flow down the side surface of the first partition wall 21. For example, as shown in FIG. 11B, the first partition wall 21 preferably has a protruding piece 95a that protrudes in the lateral direction from the lower edge portion of the through hole 95 on the side surface on the side of the second space 19. At this time, the plating solution that has flowed into the second space 19 from the first space 17 is guided to the tip end portion along the protruding piece 95a, and is discharged from the front end portion of the tip end portion away from the protruding piece 95a into the air. Therefore, it is possible to suppress the plating solution from flowing down along the side surface of the first partition wall 21. Thereby, since the contact area with the air at the time of the plating liquid flow can be increased, the dissolved oxygen concentration of the plating solution can be more effectively adjusted.

再者,省略說明其他的構成、作用及效果,但與上述第1實施形態相同。In addition, the other configurations, operations, and effects will be omitted, but they are the same as those in the first embodiment.

<其他的實施形態><Other Embodiments>

再者,本發明並非限定於上述實施形態,在不脫離其趣旨之範圍可有各種變更改良等。In addition, the present invention is not limited to the above-described embodiments, and various modifications and improvements can be made without departing from the scope of the invention.

例如,於上述各實施形態,舉對被鍍物進行鍍銅之情形為例做說明,本發明在電鍍銅之外,亦可使用於例如電鍍鎳,電鍍金等其他的電鍍。For example, in the above embodiments, the case where the object to be plated is plated with copper is described as an example. The present invention may be used for other plating such as electroplating of nickel or electroplating of gold in addition to electroplating of copper.

此外,於上述實施形態,舉他槽15以隔壁分成兩個或者三個空間情形為例做說明,惟他槽15亦可分成四個以上的空間。Further, in the above embodiment, the case where the other groove 15 is divided into two or three spaces by the partition wall will be described as an example, but the groove 15 may be divided into four or more spaces.

此外,亦可將如第4實施形態之再供給配管,設於其他的實施形態之電鍍裝置。Further, the resupply pipe according to the fourth embodiment may be provided in the plating apparatus of another embodiment.

使用上述各實施形態之電鍍裝置及使用此之電鍍方法,適於在被鍍物,例如印刷電路板、晶圓等形成配線圖案等之用途,惟並非限定於該等用途者。The plating apparatus and the plating method using the above embodiments are suitable for use in forming a wiring pattern or the like on a substrate to be plated, for example, a printed circuit board or a wafer, but are not limited to such applications.

整理以上的實施形態,如下。The above embodiments are organized as follows.

上述實施形態之電鍍裝置,包括:儲留鍍液之鍍敷槽;與該鍍敷槽為別體之槽而上述鍍液於與上述鍍敷槽之間循環之他槽。上述他槽,具有於其內部具有:第1空間;及位於較該第1空間為下游側之第2空間,上述第1空間內之上述鍍液之中,超過既定高度的部分由上述第1空間流入上述第2空間,上述鍍液於該第2空間流下空氣中的構造。The plating apparatus according to the above embodiment includes: a plating tank for storing the plating solution; and the plating tank is a groove of the other body, and the plating solution circulates between the plating tank and the plating tank. The other groove has a first space therein and a second space located downstream of the first space, and a portion exceeding the predetermined height of the plating solution in the first space is the first portion The space flows into the second space, and the plating solution has a structure in which air flows in the second space.

以該構成,由於鍍液之中超過既定高度的部分會由第1空間流入第2空間,而既定高度以下的部分會停留在第1空間內,故可使停留在該第1空間之鍍液中的金屬粒子沉降於第1空間的下方。只要如此地使金屬粒子沉降於第1空間的下方集中,則可藉由實施回收手段定期地將該等金屬粒子回收,可有效地將鍍液中的金屬粒子去除。藉此在電鍍裝置,可減少過濾器的交換頻率,依情形,可省略過濾器。According to this configuration, since the portion of the plating solution that exceeds the predetermined height flows into the second space from the first space, and the portion below the predetermined height stays in the first space, the plating solution that stays in the first space can be left. The metal particles in the solution settle below the first space. When the metal particles are deposited in the lower portion of the first space as described above, the metal particles can be periodically recovered by performing a recovery means, and the metal particles in the plating solution can be effectively removed. Thereby, in the electroplating apparatus, the frequency of exchange of the filter can be reduced, and the filter can be omitted depending on the situation.

此外,使第1空間內之鍍液之中超過上述既定高度的部分流入第2空間,在於該第2空間流下空氣中,即藉由使流動狀態的鍍液暴露於空氣而可調整鍍液的溶存氧濃度。Further, a portion of the plating liquid in the first space that exceeds the predetermined height flows into the second space, and the plating liquid can be adjusted by exposing the plating solution in the flowing state to the air in the second space. Dissolved oxygen concentration.

如以上,根據該構成,可調整鍍液的溶存氧濃度的同時,可減少起因於過濾器之交換之成本。As described above, according to this configuration, the dissolved oxygen concentration of the plating solution can be adjusted, and the cost due to the exchange of the filter can be reduced.

具體而言,作為上述他槽的上述構造,可舉例如,具有隔開上述第1空間與上述第2空間而在上下方向延設的隔壁,上述第1空間之上述鍍液溢出在於上述隔壁位於上述既定高度之位置之上緣部而流入上述第2空間之構造。Specifically, the above-described structure of the above-described other groove includes a partition wall extending in the vertical direction so as to partition the first space and the second space, and the plating solution in the first space overflows in the partition wall. The structure in which the edge of the predetermined height is above the edge and flows into the second space.

於上述電鍍裝置,上述隔壁的上述上緣部,具有向上述第2空間側延設之突出片,上述突出片具有由上述隔壁的側面離隔之先端為佳。In the above plating apparatus, the upper edge portion of the partition wall has a protruding piece extending toward the second space side, and the protruding piece preferably has a tip end separated from a side surface of the partition wall.

於該構成,由第1空間流入第2空間的鍍液,沿著上述突出片引導至其先端,由其先端之前端離開突出片放出至空氣中。即,未在上緣部設置上述突出片時,由第1空間流入第2空間的鍍液,容易接觸隔壁的側面而沿著該側面流下,惟在於本構成,可抑制鍍液沿著隔壁的側面流下。藉此,由於可增加鍍液流下時與空氣之接觸面積,故可更有效地進行調整鍍液的溶存氧濃度。With this configuration, the plating solution that has flowed into the second space from the first space is guided to the tip end along the protruding piece, and is released from the protruding piece by the front end of the tip end and released into the air. In other words, when the protruding piece is not provided at the upper edge portion, the plating solution that has flowed into the second space from the first space easily contacts the side surface of the partition wall and flows down along the side surface. However, in this configuration, the plating solution can be prevented from passing along the partition wall. The side is flowing down. Thereby, since the contact area with the air at the time of flowing the plating liquid can be increased, the dissolved oxygen concentration of the plating solution can be more effectively adjusted.

此外,在於上述電鍍裝置,上述突出片,以具有由上述第2空間邊向橫方向延伸的橫部及由該橫部的先端向下方延伸的縱部,該縱部的先端與上述隔壁的側面離隔之構造為佳。Further, in the above-described plating apparatus, the protruding piece has a lateral portion extending in the lateral direction from the second space side and a vertical portion extending downward from the tip end of the lateral portion, the leading end of the vertical portion and the side surface of the partition wall The structure of the separation is better.

於該構成,由第1空間流入第2空間的鍍液,藉由沿著上述橫部引導至其先端部,由隔壁的側面之距離變大之後,沿著上述縱部向下方向流下,故可進一步抑制鍍液沿著隔壁的側面流下。With this configuration, the plating solution that has flowed into the second space from the first space is guided to the tip end portion along the lateral portion, and the distance from the side surface of the partition wall increases, and then flows downward in the downward direction along the vertical portion. It is possible to further suppress the plating liquid from flowing down along the side of the partition wall.

此外,於上述電鍍裝置,上述他槽對,亦可為例如,上述第1空間的上述鍍液通過位於上述隔壁之上述既定高度之貫通口流入上述第2空間之構造。Further, in the above-described plating apparatus, for example, the plating solution in the first space may have a structure in which the plating solution flows into the second space through a through opening located at the predetermined height of the partition wall.

此外,上述電鍍裝置,進一步具有將上述鍍液由上述鍍敷槽輸送至上述他槽之輸送之輸送側配管,該輸送側配管於上述第1空間具有供給上述鍍液之供給口,該供給口位於較上述既定高度為下方為佳。Further, the plating apparatus further includes a transport-side pipe that transports the plating solution from the plating tank to the other tank, and the transport-side pipe has a supply port for supplying the plating solution in the first space, and the supply port It is better to be below the above-mentioned predetermined height.

以此構成,由於上述輸送側配管的供給口在較上述既定高度為下方,即位於較儲留於第1空間之鍍液之液面為下方,故由供給口對第1空間供給鍍液時可直接供給於儲留於第1空間之鍍液的液中。如此地,直接對第1空間的鍍液中供給鍍液之情形,與由供給口一旦吐出於空氣中之鍍液落入儲留於第1空間之鍍液液面之情形相比,可減低對第1空間之鍍液之衝擊。藉此,可抑制儲留於第1空間之鍍液流動,可在第1空間使金屬粒子更有效地沉降。According to this configuration, when the supply port of the transport-side pipe is located below the predetermined height, that is, below the liquid level of the plating solution stored in the first space, the plating solution is supplied to the first space by the supply port. It can be directly supplied to the liquid stored in the plating solution in the first space. In this way, the case where the plating solution is directly supplied to the plating solution in the first space can be reduced as compared with the case where the plating solution discharged from the supply port into the air is deposited in the liquid level of the plating liquid stored in the first space. Impact on the plating solution in the first space. Thereby, the flow of the plating solution stored in the first space can be suppressed, and the metal particles can be more effectively settled in the first space.

此外,由上述供給口之上述鍍液之吐出方向朝向上述他槽之內側面之情形,例如與上述突出方向朝下方之情形相比,可抑制儲留於第1空間之鍍液之流動,特別是位於下方側的鍍液之流動。藉此,由於可抑制在於第1空間沉降的金屬粒子被再度捲起,故可抑制金屬粒子在於第1空間的沉降被妨礙。Further, when the discharge direction of the plating solution of the supply port is directed toward the inner side surface of the other groove, for example, the flow of the plating solution stored in the first space can be suppressed, in particular, compared with the case where the protruding direction is downward. It is the flow of the plating solution on the lower side. Thereby, since the metal particles which settled in the first space can be suppressed from being rolled up again, it is possible to suppress the sedimentation of the metal particles in the first space from being hindered.

此外,上述電鍍裝置,亦可為進一步具有由上述鍍敷槽對上述他槽輸送上述鍍液之輸送側配管,上述隔壁係第1隔壁,上述他槽,具有第2隔壁,其係將上述第1空間的內部,分成使上述鍍液中的金屬粒子沉降的沉降空間,及位於較該沉降空間為上游側,由上述輸送側配管之供給口供給上述鍍液之供給空間,而上下方向延設之構成。Further, the plating apparatus may further include a transport side pipe that transports the plating solution to the other tank by the plating tank, wherein the partition wall is a first partition wall, and the other tank has a second partition wall The inside of the space is divided into a sedimentation space for sedimenting the metal particles in the plating solution, and is located upstream of the sedimentation space, and the supply space of the plating solution is supplied from the supply port of the transport-side pipe, and is extended in the vertical direction. The composition.

以此構成,第1空間以第2隔壁能分成沉降空間及供給空間,由於對供給空間由輸送側配管之供給口供給鍍液,故即使在供給鍍液時儲留於供給空間的鍍液流動,該流動不易傳至沉降空間。因此,與未於第1空間設置第2隔壁之情形相比,可使金屬粒子更有效地沉降。According to this configuration, the first space can be divided into the sedimentation space and the supply space by the second partition wall, and the plating liquid is supplied from the supply port of the transport-side pipe to the supply space, so that the plating solution stored in the supply space is supplied even when the plating solution is supplied. This flow is not easily transmitted to the settlement space. Therefore, the metal particles can be more effectively settled than in the case where the second partition wall is not provided in the first space.

此外,上述第2隔壁,設於較上述既定高度為下方而具有連通上述沉降空間與上述供給空間之複數連通口時,供給於供給空間之鍍液通過第2隔壁的複數的連通口分散移至沉降空間。如此地藉由使鍍液通過複數的連通口而分散流入沉降空間,可抑制儲留於沉降空間之鍍液流動。Further, when the second partition wall is provided below the predetermined height and has a plurality of communication ports that communicate with the settling space and the supply space, the plating solution supplied to the supply space is dispersed and transferred to the plurality of communication ports of the second partition wall. Settling space. By dispersing the plating solution into the sedimentation space through the plurality of communication ports as described above, the flow of the plating solution stored in the sedimentation space can be suppressed.

此外,上述第2隔壁之上緣部位於上述既定高度或較上述既定高度為下方時,第2隔壁上之上緣部的高度呈與儲留於沉降空間之鍍液之液面相同或其以下。因此,由於沉降空間的鍍液之液面與供給空間的鍍液之液面呈大致相同的高度,故由供給空間流入沉降空間的鍍液可緩和流入時之衝擊。由於可抑制在於沉降空間的金屬粒子被再度捲起,故可抑制金屬粒子在於沉降空間的沉降被妨礙。Further, when the upper edge portion of the second partition wall is located at the predetermined height or lower than the predetermined height, the height of the upper edge portion of the second partition wall is the same as or lower than the liquid level of the plating solution stored in the settling space. . Therefore, since the liquid level of the plating solution in the settling space is substantially the same height as the liquid level of the plating solution in the supply space, the plating solution flowing into the settling space from the supply space can alleviate the impact during the inflow. Since the metal particles in the settling space can be suppressed from being rolled up again, it is possible to suppress the sedimentation of the metal particles in the sedimentation space from being hindered.

此外,上述電鍍裝置,包括:由上述他槽對上述鍍敷槽回送上述鍍液之回送側配管,及將上述他槽所排出之上述鍍液送回上述第1空間之再供給配管時,在將在於他槽之鍍液之一部分送回鍍敷槽之前,可通過再供給配管再度供給第1空間。藉此,可更加有效地分離鍍液中的異物。Further, the plating apparatus includes: a return-side pipe for returning the plating solution to the plating tank by the other tank, and a resupply pipe for returning the plating solution discharged from the other tank to the first space; The first space can be re-supplied to the plating tank by returning one of the plating solutions in the tank to the plating tank. Thereby, the foreign matter in the plating solution can be separated more effectively.

此外,進一步包括設於較上述第1空間為下游側的空間之機械式攪拌機時,於第1空間使金屬粒子沉降之後,在更下游側的空間藉由上述機械式攪拌機攪拌鍍液。藉此,可進行鍍液的溶存氧濃度的微調整。Further, when the mechanical agitator is provided in the space on the downstream side of the first space, the metal particles are sedimented in the first space, and then the plating solution is stirred by the mechanical agitator in the space on the downstream side. Thereby, fine adjustment of the dissolved oxygen concentration of the plating solution can be performed.

此外,上述鍍敷槽,亦可為具有儲留上述鍍液之槽本體,及溢出槽,其係與該槽本體一體設置,上述槽本體之上述鍍液溢出上述槽本體的側壁之上緣部而流入,該溢出槽於內部具有上游側空間及位於較該上游側空間為下游側之下游側空間,上述鍍液由上述上游側空間流入上述下游側空間於空氣中流下之構造。Further, the plating tank may be a tank body having a plating solution for storing the plating solution, and an overflow tank integrally provided with the tank body, wherein the plating solution of the tank body overflows the upper edge portion of the side wall of the tank body In the meantime, the overflow tank has an upstream side space therein and a downstream side space which is located downstream of the upstream side space, and the plating solution flows into the downstream side space from the upstream side space and flows down in the air.

於此構成,不僅是他槽,在於鍍敷槽之溢出槽亦可進行鍍液溶存氧濃度的調整。於該溢出槽,鍍液由上述上游側空間流入上述下游側空間於空氣中流下時之間調整溶存氧濃度。In this configuration, not only the groove but also the overflow groove of the plating tank can also adjust the oxygen concentration of the plating solution. In the overflow tank, the plating solution adjusts the dissolved oxygen concentration between when the upstream side space flows into the downstream side space and flows down in the air.

此外,上述槽本體的上述上緣部,具有向上述溢出槽側延設之突出片,上述突出片,具有與上述槽本體的側面離隔之先端時,由槽本體流入溢出槽之鍍液,沿著上述突出片引導至其先端部,由該先端部之前端離開突出片放出至空氣中。因此,於本構成,可能抑制鍍液沿著槽本體的側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面積,故可更有效地進行鍍液溶存氧濃度之調整。Further, the upper edge portion of the groove main body has a protruding piece extending toward the overflow groove side, and the protruding piece has a plating liquid flowing into the overflow groove from the groove main body when the front end of the groove main body is separated from the side surface of the groove main body. The above-mentioned protruding piece is guided to the tip end portion thereof, and is separated from the protruding piece by the front end of the leading end portion and discharged into the air. Therefore, with this configuration, it is possible to suppress the plating solution from flowing down along the side surface of the groove body. Thereby, since the contact area with the air at the time of flowing the plating liquid can be increased, the adjustment of the dissolved oxygen concentration in the plating solution can be performed more effectively.

在於上述第2空間,上述鍍液流下空氣中的落差以10cm以上為佳。如此地藉由使上述落差為10cm以上,可更加有效地進行在他槽之鍍液之溶存氧濃度之調整。In the second space, the drop in the air flowing through the plating solution is preferably 10 cm or more. By adjusting the above-described drop to 10 cm or more, the concentration of dissolved oxygen in the plating solution in the other bath can be more effectively performed.

上述實施形態之電鍍方法,係使用包括:儲留鍍液之鍍敷槽;與該鍍敷槽為別體之槽而與上述鍍敷槽之間使上述鍍液循環之他槽之電鍍裝置。上述他槽,於其內部具有第1空間及位於較該第1空間為下游側之第2空間。於該方法,於上述第1空間將上述鍍液儲留至既定高度,使上述鍍液中的金屬粒子沉降於上述第1空間之下方。再者於該方法,使上述第1空間內的上述鍍液之中超過上述既定高度的部分流入上述第2空間,藉由於該第2空間流下空氣中調整上述鍍液之溶存氧濃度。藉此,可調整鍍液之溶存氧濃度的同時,可有效地去除鍍液中的金屬粒子。In the plating method according to the above embodiment, a plating tank including a plating bath is used, and a plating apparatus for circulating the plating solution between the plating tank and the plating tank is used. The other groove has a first space therein and a second space located downstream of the first space. In this method, the plating solution is stored in a predetermined height in the first space, and metal particles in the plating solution are deposited below the first space. Further, in this method, a portion of the plating solution in the first space that exceeds the predetermined height flows into the second space, and the dissolved oxygen concentration of the plating solution is adjusted by the air in the second space. Thereby, the concentration of dissolved oxygen in the plating solution can be adjusted, and the metal particles in the plating solution can be effectively removed.

上述實施形態之電鍍裝置及電鍍方法,係上述鍍液為使用於鍍銅者,而包含作為光亮劑特別適合使用含硫有機化合物之情形。In the plating apparatus and the plating method according to the above embodiment, the plating solution is used for copper plating, and it is particularly preferable to use a sulfur-containing organic compound as a brightener.

以下,舉實施例更加具體地說明本發明,惟本發明並非限定於以下實施例者。Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to the following examples.

<實施例1><Example 1>

使用電鍍裝置,以下述條件對被鍍物(試料No.1~8)進行電鍍銅。於試料No.2~4,使用圖12所示之電鍍裝置11。於該電鍍裝置11,鍍敷槽13係與圖1所示構造相同,他槽15係他槽本體20內以第1隔壁21及第3隔壁91分成第1空間17、第2空間19及第3空間93的三個空間之構造。鍍液,溢出第1隔壁21之上緣部,由第1空間17流入第2空間19,溢出第3隔壁91之上緣部,由第2空間19流入第3空間93。於第2空間19配設有下溢用隔板45。The object to be plated (sample No. 1 to 8) was subjected to electroplating using the plating apparatus under the following conditions. For the sample Nos. 2 to 4, the plating apparatus 11 shown in Fig. 12 was used. In the plating apparatus 11, the plating tank 13 is the same as the structure shown in FIG. 1, and the groove 15 is divided into the first space 17, the second space 19, and the first partition 21 and the third partition 91 in the tank body 20. 3 The structure of the three spaces of space 93. The plating solution overflows the upper edge portion of the first partition wall 21, flows into the second space 19 from the first space 17, overflows the upper edge portion of the third partition wall 91, and flows into the third space 93 from the second space 19. An underflow partition 45 is disposed in the second space 19.

此外,於試料No.1,5~8,使用由圖12所示電鍍裝置11之他槽15取下隔壁21、91者。Further, in Sample Nos. 1, 5 to 8, the partition walls 21 and 91 were removed by using the other grooves 15 of the plating apparatus 11 shown in Fig. 12.

第1隔壁21及第3隔壁91之上緣部之構造,係如後述之表2所示,試料No.4為構造A(示於圖2D之構造),試料No.2、3為構造B(示於圖2E之構造)。The structure of the upper edge portion of the first partition wall 21 and the third partition wall 91 is as shown in Table 2 to be described later, the sample No. 4 is the structure A (the structure shown in FIG. 2D), and the sample Nos. 2 and 3 are the structure B. (shown in the construction of Figure 2E).

第1隔壁21及第3隔壁91之上緣部至鍍液的液面的落差,如後所述之表2所示之5cm、10cm、20cm的三個條件。The difference between the upper edge portion of the first partition wall 21 and the third partition wall 91 to the liquid surface of the plating solution is three conditions of 5 cm, 10 cm, and 20 cm as shown in Table 2 below.

被鍍物(陰極),使用不鏽鋼板,及具有導通孔之基板(具有盲導通孔之印刷電路板)。使基板之導通孔的開口徑為100μm,導通孔的深度為75μm。The object to be plated (cathode) uses a stainless steel plate and a substrate having a via hole (a printed circuit board having a blind via hole). The via diameter of the via hole of the substrate was set to 100 μm, and the depth of the via hole was 75 μm.

其他的電鍍銅條件等如下。Other copper plating conditions are as follows.

鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合計):4300公升The amount of bath of the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 4,300 liters

他槽15之浴量(於第1空間17、第2空間19及第3空間93之浴量之合計):800公升The amount of bath in the tank 15 (the total amount of baths in the first space 17, the second space 19, and the third space 93): 800 liters

浴量:5100公升Bath volume: 5100 liters

鍍液:硫酸銅鍍液(包含硫酸銅五水和物200g/L、硫酸50g/L、及氯化物離子50mg/L)Plating solution: copper sulfate plating solution (including copper sulfate pentahydrate and 200g/L, sulfuric acid 50g/L, and chloride ion 50mg/L)

添加於鍍液之添加劑:上村工業社製「THRU-CUP EVF-T」Additive added to plating solution: "THRU-CUP EVF-T" manufactured by Uemura Industrial Co., Ltd.

鍍液的循環速度:860公升/分The circulation speed of the plating solution: 860 liters / minute

陽極:可溶性陽極(於鈦盒裝含磷銅球,將此裝於聚丙烯製之陽極袋者)Anode: Soluble anode (containing titanium phosphate in titanium box, this is packed in polypropylene anode bag)

以上述條件對被鍍物進行電鍍銅,評估此時之溶存氧濃度、披膜物性、導通孔的凹陷量。披膜物性(延伸率及抗張力)之評估,係使用於被鍍物之上述不鏽鋼板施以50μm的鍍銅者。於導通孔的凹陷量之評估,使用於被鍍物之上述附有導通孔之電路板施以20μm之鍍銅者。The object to be plated was subjected to electroplating copper under the above conditions, and the dissolved oxygen concentration, the physical property of the film, and the amount of depression of the via hole at this time were evaluated. The evaluation of the physical properties (elongation and tensile strength) of the film was carried out by applying a 50 μm copper plate to the above-mentioned stainless steel plate of the object to be plated. For the evaluation of the amount of depression of the via hole, a copper plate of 20 μm was applied to the above-mentioned circuit board with the via hole of the object to be plated.

於該實施例1,對不鏽鋼板,以如下步驟1~8之順序施以前處理、電鍍銅處理、及後處理。In the first embodiment, the stainless steel sheets were subjected to the prior treatment, the electroplating copper treatment, and the post treatment in the order of the following steps 1 to 8.

步驟1:酸洗清潔劑(上村工業社製MSC-3-A)Step 1: Pickling Cleaner (MSC-3-A, manufactured by Uemura Industrial Co., Ltd.)

步驟2:湯洗Step 2: Soup wash

步驟3:水洗Step 3: Washing

步驟4:酸洗Step 4: Pickling

步驟5:水洗Step 5: Washing

步驟6:電鍍銅Step 6: Electroplating copper

步驟7:水洗Step 7: Washing

步驟8:乾燥Step 8: Dry

此外,對於附有導通孔之基板,則進行習知之去膠渣處理及化學鍍銅(0.3μm)處理之後,以與上述相同的步驟1~8之順序施以前處理、電鍍銅處理、及後處理。Further, for the substrate with the via hole, the conventional desmear treatment and the electroless copper plating (0.3 μm) are performed, and the pretreatment, the electroplating copper treatment, and the subsequent steps are performed in the same steps as the above-mentioned steps 1 to 8. deal with.

此外,在於實施例1之電鍍銅之條件如表1。電鍍銅之處理溫度(鍍液的溫度)為25℃。再者,表1中的陰極電流密度的單位為A/dm2Further, the conditions for electroplating copper in Example 1 are shown in Table 1. The processing temperature of the electroplated copper (temperature of the plating solution) was 25 °C. Further, the unit of the cathode current density in Table 1 is A/dm 2 .

將結果示於表2。此外,於表3記載各試料之試驗程序。此外,於表4表示試料No.1之鍍敷處理結束後,作為他槽安裝圖12所示之隔壁21、91,電解30分鐘、60分鐘、90分鐘時之溶存氧濃度。此外,使各噴嘴61對被鍍物(陰極57)之鍍液流量大致一定地,使通過回送側配管41對槽本體47供給之鍍液之一部分通過配管端部41c供給。溶存氧濃度,係測定採自安裝於圖12之配管端部41c附近之配管之省略圖示之閥門之鍍液之溶存氧。The results are shown in Table 2. In addition, the test procedure of each sample is shown in Table 3. In addition, in Table 4, after the completion of the plating treatment of Sample No. 1, the partition walls 21 and 91 shown in Fig. 12 were attached as the other tanks, and the dissolved oxygen concentration was electrolyzed for 30 minutes, 60 minutes, and 90 minutes. In addition, a portion of the plating liquid supplied to the tank main body 47 through the return-side piping 41 is supplied through the piping end portion 41c so that the flow rate of the plating liquid to the object to be plated (cathode 57) is substantially constant. The dissolved oxygen concentration is measured by the dissolved oxygen of the plating solution of the valve which is omitted from the piping attached to the pipe end portion 41c of Fig. 12 .

導通孔的凹陷量,係對圖15A所示之附有導通孔之基板101,施以圖15B所示之鍍銅103後,藉由測定形成於導通孔101c內之鍍銅103之表面中最低的部分,及形成於導通孔101c之周緣部之鍍銅103之表面之高度(厚度方向之尺寸)之差距Δh求得(圖15B)。再者,圖15A之附有導通孔之基101,包括樹脂層101a及形成於該樹脂層101a表面之銅層101b,對此形成導通孔101c者。The amount of recess of the via hole is the lowest in the surface of the copper plating 103 formed in the via hole 101c after the copper plating 103 shown in FIG. 15B is applied to the substrate 101 with the via hole shown in FIG. 15A. The portion Δh of the height (the dimension in the thickness direction) of the surface of the copper plating 103 formed on the peripheral portion of the via hole 101c is obtained (Fig. 15B). Further, the base 101 to which the via hole is attached in FIG. 15A includes a resin layer 101a and a copper layer 101b formed on the surface of the resin layer 101a, and the via hole 101c is formed therewith.

此外,延伸率及抗張力,係使用圖16所示之試驗片如下測定。即,首先,對不鏽鋼板施以50μ±5μm之鍍銅,接著,避免有皺紋或傷痕地仔細地由不鏽鋼板剝下鍍銅層(銅箔)。將該銅箔以120℃熱處理2小時後,以沖模製作圖16所示形狀的試驗片。將該試驗片之中央部之膜厚以螢光X射線膜厚計測定,將該測定值作為試驗片之膜厚d(mm)。接著,使拉張試驗機之夾頭之間的距離為40mm,使試驗片之內圓部分由夾頭露出,將試驗片以夾頭固定,以拉張速度4mm/分進行試驗。其次,由試驗所得圖表讀取最大拉張應力F(kgf),將該值以F(kgf)以試驗片的剖面積商除,得到表2、6、9所示之抗張力(kgf/mm2 )。試驗片的剖面積,係以試驗片的中央部的寬度10mm與膜厚dmm之積。延伸率E(%),係測量將試驗片開始拉伸至試驗片破斷所伸長之尺寸ΔL(mm),將該ΔL(mm)以拉伸錢之試驗片之中央部之直線部分之尺寸(20mm)商除而算出。Further, the elongation and the tensile strength were measured by using the test piece shown in Fig. 16 as follows. Namely, first, the stainless steel plate was subjected to copper plating of 50 μ ± 5 μm, and then the copper plating layer (copper foil) was carefully peeled off from the stainless steel plate without wrinkles or scratches. After the copper foil was heat-treated at 120 ° C for 2 hours, a test piece having the shape shown in Fig. 16 was produced by punching. The film thickness of the center portion of the test piece was measured by a fluorescent X-ray film thickness meter, and the measured value was defined as the film thickness d (mm) of the test piece. Next, the distance between the chucks of the tensile tester was set to 40 mm, the inner round portion of the test piece was exposed by the chuck, and the test piece was fixed by a chuck, and the test was performed at a tensile speed of 4 mm/min. Next, the maximum tensile stress F (kgf) was read from the chart obtained by the test, and the value was divided by the cross-sectional area of the test piece at F (kgf) to obtain the tensile strength shown in Tables 2, 6, and 9 (kgf/mm 2 ). ). The cross-sectional area of the test piece was the product of the width of the central portion of the test piece of 10 mm and the film thickness dmm. The elongation E (%) is a measure of the dimension ΔL (mm) at which the test piece is stretched until the test piece is broken, and the ΔL (mm) is the size of the straight portion of the central portion of the test piece for stretching the money. (20mm) is calculated by dividing.

由表2之試料No.1的結果,可知使用沒有設置隔壁21、91之他槽時,鍍液的溶存氧濃度低,有增大導通孔凹陷量之趨勢。As a result of the sample No. 1 of Table 2, it was found that when the other grooves in which the partition walls 21 and 91 were not provided, the dissolved oxygen concentration of the plating solution was low, and the amount of the via hole depression was increased.

由試料No.2~4的結果,可知藉由於他槽15設置隔壁21、91使鍍液溢出可提高溶存氧濃度。此外,如試料No.3、4藉由使溢出時鍍液的落差為10cm以上,可顯著地提高溶存氧濃度。於該等試料No.3、4,即使長時間電解,溶存氧濃度並沒有減少。As a result of the sample Nos. 2 to 4, it is understood that the dissolved oxygen concentration can be increased by overflowing the plating solution by providing the partition walls 21 and 91 in the groove 15. Further, in Sample Nos. 3 and 4, the concentration of dissolved oxygen was remarkably increased by making the difference in plating solution at the time of overflow of 10 cm or more. In these sample Nos. 3 and 4, even if electrolysis was performed for a long period of time, the dissolved oxygen concentration did not decrease.

由試料No.4之鍍敷處理之後,接續進行之試料No.5~8之結果,可知由他槽15取下隔壁21、91,則隨著電解時間變長溶存氧濃度下降,而有增大導通孔凹陷量的趨勢。After the plating treatment of the sample No. 4, the results of the sample Nos. 5 to 8 which were successively carried out, it was found that the partition walls 21 and 91 were removed from the other grooves 15, and the dissolved oxygen concentration decreased as the electrolysis time became longer. The tendency of the amount of large via holes to be recessed.

此外,如表4所示,於試料No.1之鍍敷處理之後,於他槽安裝隔壁21、91電解,則隨著時間經過可提高溶存氧濃度。Further, as shown in Table 4, after the plating treatment of the sample No. 1, the electrolysis was performed by the partition walls 21 and 91 in the other tank, and the dissolved oxygen concentration was increased over time.

<實施例2><Example 2>

使用如圖13A及圖13B所示之電鍍裝置,以下述條件對被鍍物(試料No.9~14)進行電鍍銅。於試料No.12~14,作為他槽15使用具有與圖12之的裝置相同的隔壁21、91之他槽。此外,鍍敷槽13,係如圖13A及圖13B所示,包括槽本體47,及溢出槽49,由槽本體47溢出之鍍液流入溢出槽49之構造。於槽本體47內,將陰極57的板狀被鍍物以略水平配置,於該陰極57上下分別排列複數陽極55。此外,於陰極57上下,分別配設噴嘴61。各噴嘴61,設有將通過回送側配管41由他槽15輸送之鍍液朝向陰極57側噴出之複數噴出口(無圖示)。The object to be plated (sample No. 9 to 14) was plated with copper under the following conditions using a plating apparatus as shown in Figs. 13A and 13B. In the sample Nos. 12 to 14, as the other groove 15, a groove having the partition walls 21, 91 which are the same as those of the device of Fig. 12 was used. Further, as shown in FIGS. 13A and 13B, the plating tank 13 includes a tank body 47 and an overflow tank 49, and the plating liquid overflowed from the tank body 47 flows into the overflow tank 49. In the tank body 47, the plate-shaped object to be plated of the cathode 57 is arranged slightly horizontally, and a plurality of anodes 55 are arranged above and below the cathode 57, respectively. Further, nozzles 61 are disposed above and below the cathode 57, respectively. Each of the nozzles 61 is provided with a plurality of discharge ports (not shown) that eject the plating liquid transported from the other grooves 15 through the return-side piping 41 toward the cathode 57 side.

此外,於試料No.9~11,係使用由他槽15取下隔壁21、91者。Further, in Sample Nos. 9 to 11, the partition walls 21 and 91 were removed from the other grooves 15.

由第1隔壁21及第3隔壁91之上緣部至鍍液液面之落差,係如後述之表6所示之5cm、10cm、20cm之三個條件。The difference between the upper edge portion of the first partition wall 21 and the third partition wall 91 to the plating liquid surface is three conditions of 5 cm, 10 cm, and 20 cm as shown in Table 6 to be described later.

作為被鍍物(陰極),使用不鏽鋼板及附有通孔之基板。在於該基板之通孔的內徑為0.3mm,基板的板厚為1.6mm。As the object to be plated (cathode), a stainless steel plate and a substrate with a through hole were used. The inner diameter of the through hole of the substrate was 0.3 mm, and the thickness of the substrate was 1.6 mm.

其他的電鍍銅之條件如下。Other conditions for electroplating copper are as follows.

鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合計):1000公升The amount of bath of the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 1000 liters

他槽15之浴量(於第1空間17、第2空間19及第3空間93之浴量之合計):1400公升The amount of bath in the tank 15 (the total amount of baths in the first space 17, the second space 19, and the third space 93): 1400 liters

浴量:2400公升Bath volume: 2400 liters

鍍液:硫酸銅鍍液(包含硫酸銅五水和物100g/L、硫酸200g/L、及氯化物離子50mg/L)Plating solution: copper sulfate plating solution (including copper sulfate pentahydrate and 100g/L, sulfuric acid 200g/L, and chloride ion 50mg/L)

添加於鍍液之添加劑:上村工業社製「THRU-CUP ETN」Additive added to plating solution: "THRU-CUP ETN" manufactured by Uemura Industrial Co., Ltd.

鍍液之循環速度:3000公升/分Plating rate of plating solution: 3000 liters / minute

陽極:不溶性陽極(於Ti-Pt塗敷氧化銥)Anode: Insoluble anode (coated with bismuth oxide on Ti-Pt)

於該實施例2,對不鏽鋼板,以與實施例1同樣的步驟1~8之順序施以前處理、電鍍銅處理及後處理。In the second embodiment, the stainless steel sheets were subjected to the prior treatment, the electroplating copper treatment, and the post treatment in the same manner as in the first to the first steps.

此外,對於附有通孔之基板,係以與實施例1同樣地進行習知之去膠渣處理及化學鍍銅(0.3μm)處理之後,以與實施例1同樣的步驟1~8之順序施以前處理、電鍍銅處理及後處理。Further, the substrate having the through holes was subjected to conventional desmearing treatment and electroless copper plating (0.3 μm) treatment in the same manner as in Example 1, and then applied in the same manner as in the first to the first steps of the first embodiment. Previous treatment, electroplating copper treatment and post treatment.

此外,於實施例2之電鍍銅條件如表5所示。電鍍銅處理溫度(鍍液的溫度)為25℃。再者,表5中的陰極電流密度之單位係A/dm2Further, the copper plating conditions in Example 2 are shown in Table 5. The electroplating copper treatment temperature (temperature of the plating solution) was 25 °C. Further, the unit of the cathode current density in Table 5 is A/dm 2 .

以上述條件對被鍍物進行電鍍銅,評估此時之溶存氧濃度、披膜物性、通孔的均一性(TH-TP)。將結果示於表6。此外,於表7記載各試料之試驗程序。溶存氧濃度,係測定採自安裝於圖13之過濾氣65之下游側之回送側配管41之省略圖示之閥門之鍍液之溶存氧。The object to be plated was subjected to electroplating copper under the above conditions, and the dissolved oxygen concentration, the physical properties of the film, and the uniformity of the through holes (TH-TP) were evaluated. The results are shown in Table 6. In addition, the test procedure of each sample is shown in Table 7. The dissolved oxygen concentration is measured by the dissolved oxygen of the plating solution of the valve (not shown) taken from the return-side pipe 41 installed on the downstream side of the filtered gas 65 of Fig. 13 .

均一性,其定義係鍍在通孔的深度方向之中央之鍍銅厚度對通孔附近之基板表面之鍍銅厚度之比。即,均一性(TH-TP),係如圖17所示,對形成友通孔105a之基板105以上述條件施以鍍銅107之後,分別測定鍍在通孔之深度方向之中央部之鍍銅厚度e、f,及通孔附近的基板表面之鍍銅面之厚度a~d,藉由將各值代入下式(5)而求得。Uniformity, which is defined as the ratio of the thickness of the copper plated in the center of the depth direction of the through hole to the thickness of the copper plated on the surface of the substrate near the through hole. In other words, the uniformity (TH-TP) is as shown in FIG. 17, and after the copper plating 107 is applied to the substrate 105 on which the friend via hole 105a is formed, the plating in the central portion in the depth direction of the via hole is measured. The copper thicknesses e, f, and the thickness a to d of the copper plating surface on the surface of the substrate in the vicinity of the through hole are obtained by substituting each value into the following formula (5).

TH-TP(%)=2(e+f)/(a+b+c+d)×100 (5)TH-TP(%)=2(e+f)/(a+b+c+d)×100 (5)

由表6之試料No.9之結果,於開始鍍敷時之溶存氧濃度為7.4mg/公升,故披膜物性良好。但是,由試料No.10、11之結果,可知隨著電解時間變長溶存氧濃度增加,3小時後的試料No.10之披膜物性變差,而TH-TP變的相當低,6小時後的試料No.11,則披膜物性變得更差,TH-TP降低至65.6%。As a result of the sample No. 9 of Table 6, the dissolved oxygen concentration at the start of plating was 7.4 mg/liter, so that the physical properties of the film were good. However, as a result of the samples Nos. 10 and 11, it was found that as the electrolysis time became longer and the dissolved oxygen concentration increased, the physical properties of the sample No. 10 after 3 hours deteriorated, and the TH-TP became quite low, 6 hours. In the subsequent sample No. 11, the physical property of the film became worse, and the TH-TP was lowered to 65.6%.

另一方面,試料No.12~14,藉由在他槽15設置隔壁21、91使鍍液溢出而可抑制溶存氧濃度的上升。特別是,藉由如試料No.13、14使鍍液溢出時的落差為10cm以上,可顯著地提高抑制溶存氧濃度上升的效果。於該等試料No.13、14,可使溶存氧濃度降低至20mg/公升以下,而披膜物性亦良好,TH-TP亦成75%以上。On the other hand, in Sample Nos. 12 to 14, the plating liquid was overflowed by providing the partition walls 21 and 91 in the other tank 15, and the increase in the dissolved oxygen concentration was suppressed. In particular, when the amount of the plating solution overflowed by the sample Nos. 13 and 14 is 10 cm or more, the effect of suppressing the increase in the dissolved oxygen concentration can be remarkably enhanced. In these samples Nos. 13 and 14, the dissolved oxygen concentration was lowered to 20 mg/liter or less, and the physical properties of the film were also good, and the TH-TP was also 75% or more.

<實施例3><Example 3>

使用如圖14所示之電鍍裝置以下述條件對被鍍物(試料No.15~18)進行電鍍銅。於試料No.17、18,作為他槽15使用具有與圖12之裝置同樣的隔壁21、91之他槽。此外,鍍敷槽13,係如圖14所示,包括槽本體47,及溢出槽49,由槽本體47溢出之鍍液流入溢出槽49之構造。The object to be plated (sample No. 15 to 18) was subjected to electroplating using the plating apparatus shown in Fig. 14 under the following conditions. In the sample Nos. 17 and 18, as the other groove 15, a groove having the partition walls 21 and 91 similar to those of the device of Fig. 12 was used. Further, as shown in FIG. 14, the plating tank 13 includes a tank body 47 and an overflow tank 49, and the plating liquid overflowed from the tank body 47 flows into the overflow tank 49.

槽本體47內,以膈膜99分成兩個空間。作為該膈膜99,使用Yuasa Membrane System公司製「Y-9205T」。於一邊的空間配置陰極57之被鍍物,於另一邊的空間配置陽極55。陰極57附近配設有噴嘴61。噴嘴61,設有將通過回送側配管41由他槽15輸送之鍍液朝向陰極57側噴出之噴出口(無圖示)。Inside the tank body 47, the diaphragm 99 is divided into two spaces. As the ruthenium film 99, "Y-9205T" manufactured by Yuasa Membrane System Co., Ltd. was used. The object to be plated of the cathode 57 is disposed in one space, and the anode 55 is disposed in the space on the other side. A nozzle 61 is disposed in the vicinity of the cathode 57. The nozzle 61 is provided with a discharge port (not shown) that ejects the plating liquid conveyed from the other tank 15 through the return-side pipe 41 toward the cathode 57 side.

此外,試料No.15、16,使用由他槽15取下隔壁21、91者。Further, in Sample Nos. 15 and 16, the partition walls 21 and 91 were removed from the other grooves 15.

由第1隔壁21及第3隔壁91的上緣部到鍍液液面的落差,係如後述之表9所示之10cm、20cm之兩個條件。The difference between the upper edge portion of the first partition wall 21 and the third partition wall 91 to the plating liquid surface is two conditions of 10 cm and 20 cm as shown in Table 9 to be described later.

作為被鍍物(陰極),使用具有不鏽鋼板、及盲導通孔之晶圓。在該基板之導通孔的開口徑為15μm,導通孔的深度為25μm。As the object to be plated (cathode), a wafer having a stainless steel plate and a blind via hole is used. The via diameter of the via hole of the substrate was 15 μm, and the depth of the via hole was 25 μm.

其他的電鍍銅的條件如下。Other conditions for electroplating copper are as follows.

鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合計):50公升The amount of bath of the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 50 liters

他槽15之浴量(於第1空間17、第2空間19及第3空間93之浴量之合計):150公升The amount of bath in the tank 15 (the total amount of baths in the first space 17, the second space 19, and the third space 93): 150 liters

浴量:200公升Bath volume: 200 liters

鍍液:硫酸銅鍍液(包含硫酸銅五水和物200g/L、硫酸50g/L、及氯化物離子50mg/L)Plating solution: copper sulfate plating solution (including copper sulfate pentahydrate and 200g/L, sulfuric acid 50g/L, and chloride ion 50mg/L)

添加於鍍液之添加劑:上村工業社製「THRU-CUP ESA-21」Additive added to plating solution: "THRU-CUP ESA-21" manufactured by Uemura Industrial Co., Ltd.

鍍液的循環速度:100公升/分The circulation speed of the plating solution: 100 liters / minute

陽極:可溶性陽極(於鈦盒裝含磷銅球者)Anode: Soluble anode (in titanium box containing phosphor bronze balls)

於該實施例3,對不鏽鋼板,以與實施例1同樣的步驟1~8的順序施以前處理、電鍍銅處理及後處理。In the third embodiment, the pretreatment, the electroplating copper treatment, and the post treatment were applied to the stainless steel sheets in the same manner as in the first to the first steps of the first embodiment.

此外,對晶圓,以習知之方法施以阻障層、種晶層之後,以與實施例1同樣的步驟1~8的順序施以前處理、電鍍銅處理及後處理。Further, after the barrier layer and the seed layer were applied to the wafer by a conventional method, the prior treatment, the copper plating treatment, and the post treatment were applied in the same manner as in the first to the first steps of the first embodiment.

此外,於實施例3的電鍍銅之條件如表8所示。電鍍銅處理之溫度(鍍液的溫度)為25℃。此外,表8中之陰極電流密度之單位為A/dm2Further, the conditions for electroplating copper in Example 3 are shown in Table 8. The temperature of the electroplating copper treatment (temperature of the plating solution) was 25 °C. Further, the unit of the cathode current density in Table 8 is A/dm 2 .

以上述條件對被鍍物進行電鍍銅,評估此時之溶存氧濃度、披膜物性、導通孔的凹陷量。結果示於表9。此外,於表10記載各試料的試驗程序。溶存氧濃度,係測定採自安裝於圖14之過濾氣65之下游側之回送側配管41之省略圖示之閥門之鍍液之溶存氧。The object to be plated was subjected to electroplating copper under the above conditions, and the dissolved oxygen concentration, the physical property of the film, and the amount of depression of the via hole at this time were evaluated. The results are shown in Table 9. Further, the test procedures of the respective samples are shown in Table 10. The dissolved oxygen concentration is measured by the dissolved oxygen of the plating solution of the valve (not shown) taken from the return-side piping 41 installed on the downstream side of the filtration gas 65 of Fig. 14 .

此外,於試料No.15,在於他槽15之第1空間17藉由使用空氣攪拌裝置94將空氣供給鍍液中邊進行空氣攪拌施以鍍敷。Further, in sample No. 15, the first space 17 of the other tank 15 was plated by air agitation using air agitation device 94 while supplying air to the plating solution.

一邊在他槽15之第1空間17進行空氣攪拌進行電解之表9之試料No.15,鍍敷槽13之溶存氧濃度如表9所示為3.8mg/公升,而此時之他槽15之溶存氧濃度為7.2mg/公升。藉由如此地進行空氣攪拌雖可將他槽的溶存氧濃度維持在合適的範圍,但由於進行空氣攪拌會妨礙銅粒子在第1空間17的沉降,於過濾器65確認到多數的銅粒子之附著。由於附著於該過濾器65之銅粒子會消耗溶存氧,故在於鍍敷槽之溶存氧濃度會下降,而有使導通孔凹陷量變大的趨勢。The sample No. 15 of Table 9 was electrolyzed by air agitation in the first space 17 of the tank 15, and the dissolved oxygen concentration of the plating tank 13 was 3.8 mg/liter as shown in Table 9, and at this time, the tank 15 was The dissolved oxygen concentration was 7.2 mg / liter. By performing the air agitation in this manner, the dissolved oxygen concentration in the other tank can be maintained in an appropriate range. However, the air agitation hinders the sedimentation of the copper particles in the first space 17, and the filter 65 confirms that a large number of copper particles are present. Attached. Since the copper particles adhering to the filter 65 consume dissolved oxygen, the concentration of dissolved oxygen in the plating tank is lowered, and the amount of recessed via holes tends to increase.

由試料No.16之結果,交換過濾器65之後不久的銅粒子幾乎沒有附著,故鍍敷槽的溶存氧濃度亦呈良好的值,導通孔凹陷量亦變小。As a result of the sample No. 16, the copper particles immediately after the exchange of the filter 65 hardly adhered, so that the dissolved oxygen concentration in the plating tank was also good, and the amount of recessed in the via hole was also small.

試料No.17、18,由銅粒子幾乎沒有附著於過濾器65之狀態(新品最初的白色狀態),可知銅粒子有效地在第1空間17沉降。如此地藉由在他槽設置隔壁使鍍液溢出可提高溶存氧濃度的同時,可將銅粒子有效地由鍍液分離。藉此,可將在於鍍敷槽的溶存氧濃度維持在合適的範圍,導通孔凹陷量亦變小。Sample Nos. 17 and 18 were in a state where the copper particles hardly adhered to the filter 65 (the first white state of the new product), and it was found that the copper particles effectively settled in the first space 17. Thus, the copper particles can be effectively separated from the plating solution while overflowing the plating solution by providing a partition wall in the other groove to increase the dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the plating tank can be maintained in an appropriate range, and the amount of recessed in the via hole can also be reduced.

<參考例><Reference example>

使用循環式伏特剝離法(CVS)測定法,調查鍍液中的溶存氧濃度、光亮劑的濃度及Ar值之關係。CVS測定之方法如下。The relationship between the dissolved oxygen concentration in the plating solution, the concentration of the brightener, and the Ar value was investigated using a cyclic volt stripping method (CVS) measurement method. The method of CVS measurement is as follows.

1)Ar值之測定方法1) Method for determining Ar value

將作為工作電極(Working electrode)之旋轉白金電極,作為輔助電極(counter electrode)之銅棒,作為參考電級(Reference electrode)之銀/氯化銀雙鹽橋電極分別浸漬在鍍液中,邊變化施加於旋轉白金電極之電位,反覆鍍敷步驟、剝離步驟、及清洗步驟,製作電位-電流曲線(Voltammogram),由該電位-電流曲線求剝離步驟之面積(Ar值)。A rotating platinum electrode as a working electrode, a copper rod serving as a counter electrode, and a silver/silver chloride double salt bridge electrode as a reference electrode are respectively immersed in the plating solution. The potential applied to the rotating platinum electrode was changed, and the plating step, the peeling step, and the cleaning step were repeated to prepare a potential-current curve (Voltammogram), and the potential-current curve was used to determine the area (Ar value) of the peeling step.

後述表11、12所示結果,係應用上述CVS測定法所得者,藉由在於上述測定方法反覆連續掃描所得之Ar值之經時變化。The results shown in Tables 11 and 12 below are those obtained by applying the above CVS measurement method, and the time-dependent change of the Ar value obtained by repeating the continuous scanning in the above measurement method.

2)用於測定Ar值之測定機器、測定條件2) Measuring machine for measuring Ar value, measurement conditions

測定機器:ECI公司製「QL-5」Measuring machine: "QL-5" made by ECI

測定條件:旋轉白金電極之旋轉數2500rpm、電位掃描速度100mV/秒、溫度25℃Measurement conditions: Rotating platinum electrode rotation number 2500 rpm, potential scanning speed 100 mV / sec, temperature 25 ° C

3)測定液3) Measuring solution

將測定液如下調製。將後述之VMS30mL放入容器,於該容器使用加入測定對象之鍍液30mL的混合液作為測定液。The measurement solution was prepared as follows. A VMS 30 mL to be described later was placed in a container, and a mixed solution of 30 mL of a plating solution to be measured was used as the measurement liquid.

4)VMS及測定對象鍍敷液4) VMS and measuring object plating solution

測定對象的鍍敷液,關於試料No. 19~23係如表11所示,關於試料No. 24~28則如表12所示。即,試料No. 19之測定對象鍍敷液,係於實施例1之試料No. 1之鍍敷處理中,由安裝於圖12之配管端部41c附近之配管之省略圖示之閥所採取之鍍液,試料No. 20之測定對象鍍敷液,係於實施例1之試料No. 3之鍍敷處理中,由同樣的位置採取之鍍液。此外,試料No. 24之測定對象之鍍敷液,係於實施例2之試料No. 11之鍍敷處理中,由安裝於圖13之過濾器65之下游側之回送側配管41之省略圖示之閥所採取之鍍液,試料No. 25之測定對象之鍍敷液,係於實施例2之試料No. 13之鍍敷處理中,由同樣的位置採取的鍍液。The plating solution to be measured is shown in Table 11 for Sample Nos. 19 to 23, and Table 12 for Sample Nos. 24 to 28. In the plating process of the sample No. 1 of the first embodiment, the plating solution of the sample No. 19 of the first embodiment is taken by a valve (not shown) attached to the pipe near the pipe end portion 41c of Fig. 12 . In the plating solution of the sample No. 20 of the sample No. 20, the plating solution was taken from the same position in the plating treatment of the sample No. 3 of the first embodiment. In addition, in the plating process of the sample No. 11 of the second embodiment, the plating liquid of the sample No. 24 of the sample No. 24 is omitted from the return-side pipe 41 attached to the downstream side of the filter 65 of Fig. 13 . The plating solution to be used for the valve, and the plating liquid to be measured by the sample No. 25 are the plating liquids taken at the same position in the plating treatment of the sample No. 13 of the second embodiment.

此外,試料No.21~23及試料No.26~28之測定對象之鍍敷液,係於燒杯中調製使調製後之測定液之溶存氧濃度及光亮劑濃度呈表11、12之各試料之值。In addition, the plating liquids to be measured in Sample Nos. 21 to 23 and Sample Nos. 26 to 28 were prepared in a beaker, and the dissolved oxygen concentration and the brightener concentration of the prepared measurement liquid were shown in Tables 11 and 12. The value.

試料No.19~23之測定對象之鍍敷液之添加劑,係使用上村工業公司社製「THRU-CUP EVF-T」,試料No.24~28之測定對象之鍍敷液之添加劑,分別使用上村工業公司製之「THRU-CUP ETN」。The additive of the plating solution to be measured by the sample No. 19 to 23 is used as "THRU-CUP EVF-T" manufactured by Uemura Industrial Co., Ltd., and the additive of the plating solution to be measured in samples No. 24 to 28, respectively. "THRU-CUP ETN" manufactured by Uemura Industrial Co., Ltd.

作為VMS(無添加添加劑之鍍敷液),關於表11之試料No.19~23,使用硫酸銅鍍液(包含硫酸銅五水和物200g/L、硫酸50g/L、及氯化物離子50mg/L),關於表12之試料No.24~28,使用硫酸銅鍍液(包含硫酸銅五水和物100g/L、硫酸200g/L、及氯化物離子50mg/L)。As VMS (plating solution without additive), for the sample Nos. 19 to 23 of Table 11, a copper sulfate plating solution (containing copper sulfate pentahydrate and 200 g/L, sulfuric acid 50 g/L, and chloride ion 50 mg) was used. /L) For the sample Nos. 24 to 28 of Table 12, a copper sulfate plating solution (containing copper sulfate pentahydrate and 100 g/L, sulfuric acid 200 g/L, and chloride ion 50 mg/L) was used.

5)測定結果5) Measurement results

將測定結果示於表11及表12。The measurement results are shown in Table 11 and Table 12.

測定之Ar值,反映光亮劑之濃度的高低。由表11,如試料No.20、21以適當的溶存氧濃度及光亮劑濃度時,Ar值為1.14~1.16左右。如試料No.19,即使光亮劑濃度適當而溶存氧濃度不足時,初期的Ar值大致與光亮劑濃度過剩之情形(試料No.22)為1.2左右。該試料No.19之Ar值,隨著時間的經過降低至大致與試料No.20一樣的1.15左右。The measured Ar value reflects the concentration of the brightener. From Table 11, in the case of Sample Nos. 20 and 21 with an appropriate dissolved oxygen concentration and a brightener concentration, the Ar value was about 1.14 to 1.16. In sample No. 19, even when the concentration of the brightener was insufficient and the dissolved oxygen concentration was insufficient, the initial Ar value was almost equal to the case where the brightener concentration was excessive (sample No. 22) was about 1.2. The Ar value of the sample No. 19 was reduced to approximately 1.15 as much as the sample No. 20 as time passed.

此外,由表12,如試料No.25、26,溶存氧濃度及光亮劑濃度適正時,Ar值為1.97左右。如試料No.24即使光亮劑濃度適當而溶存氧濃度過剩時,初期的Ar值大致與光亮劑濃度不足之情形(試料No.28)一樣為1.91左右。該試料No.24之Ar值隨著時間的經過增加至大致與試料No.25一樣的1.96左右。Further, from Table 12, in Sample Nos. 25 and 26, when the dissolved oxygen concentration and the brightener concentration were appropriate, the Ar value was about 1.97. In the sample No. 24, even if the concentration of the brightener was excessive and the dissolved oxygen concentration was excessive, the initial Ar value was approximately 1.91 as much as the case where the brightener concentration was insufficient (sample No. 28). The Ar value of the sample No. 24 was increased to approximately 1.96 as much as the sample No. 25 with the passage of time.

再者,如上述試料No.19及No.24,隨著時間的經過Ar值分別接近試料No.20及試料No.25之Ar值之起因如下。即,如果連續重複進行掃描,則由於空氣會溶入測定液,故如表11、12所示地溶存氧濃度變動而接近適當的濃度。空氣溶入測定液的理由係以旋轉白金電極攪拌,及VMS的溶存氧濃度接近於空氣的飽和濃度。Further, as in the above-mentioned samples No. 19 and No. 24, the Ar values corresponding to the Ar values of the sample No. 20 and the sample No. 25 with the passage of time were as follows. In other words, if the scanning is repeated continuously, since the air is dissolved in the measuring liquid, the dissolved oxygen concentration changes as shown in Tables 11 and 12 and approaches an appropriate concentration. The reason why the air is dissolved in the measuring liquid is to stir with a rotating platinum electrode, and the dissolved oxygen concentration of the VMS is close to the saturated concentration of the air.

11...電鍍裝置11. . . Plating device

13...鍍敷槽13. . . Plating tank

15...他槽15. . . He slot

17...第1空間17. . . First space

19...第2空間19. . . Second space

20...他槽本體20. . . He slot body

21...第1隔壁twenty one. . . 1st next door

23...上緣部twenty three. . . Upper edge

24...上緣部twenty four. . . Upper edge

25...隔壁主體25. . . Next door body

27...突出片27. . . Protruding piece

27a...橫部27a. . . Transverse

27b...縱部27b. . . Longitudinal

29...輸送側配管29. . . Conveying side piping

29a...供給口29a. . . Supply port

31...沉降空間31. . . Settling space

32...金屬粒子32. . . Metal particles

33...供給空間33. . . Supply space

35...第2隔壁35. . . Second next door

35a...上緣部35a. . . Upper edge

41...回送側配管41. . . Return side piping

41a...端部41a. . . Ends

41b...端部41b. . . Ends

41c...端部41c. . . Ends

43...再供給配管43. . . Resupply piping

43a...再供給配管43之一端43a. . . One end of the supply pipe 43

43b...再供給配管43之另一端43b. . . The other end of the supply pipe 43

45...隔板45. . . Partition

47...槽本體47. . . Slot body

49...溢出槽49. . . Overflow slot

51...側壁51. . . Side wall

53...上緣部53. . . Upper edge

55...陽極55. . . anode

57...陰極57. . . cathode

59...陽極袋59. . . Anode bag

61...噴嘴61. . . nozzle

63...幫浦63. . . Pump

64...幫浦64. . . Pump

65...過濾器65. . . filter

66...幫浦66. . . Pump

68...過濾器68. . . filter

71...上游側空間71. . . Upstream space

73...下游側空間73. . . Downstream side space

75...第1槽75. . . First slot

77...第2槽77. . . Second slot

79...貫通口79. . . Through hole

83...吐出管83. . . Spit tube

85...貫通口85. . . Through hole

91...第3隔壁91. . . 3rd next door

93...第3空間93. . . Third space

95...貫通口95. . . Through hole

95a...突出片95a. . . Protruding piece

圖1係表示關於本發明之第1實施形態之電鍍裝置之構成圖。Fig. 1 is a view showing the configuration of a plating apparatus according to a first embodiment of the present invention.

圖2A~圖2F係分別表示在於上述電鍍裝置的他槽之上緣部之構造之變形例。2A to 2F are diagrams each showing a modification of the structure of the upper edge portion of the groove of the plating apparatus.

圖3A~圖3E係分別表示輸送側配管之形狀及配置狀態之變形例。3A to 3E show modifications of the shape and arrangement state of the piping on the transport side, respectively.

圖4係表示關於本發明之第2實施形態之電鍍裝置之他槽之構成圖。Fig. 4 is a view showing the configuration of a groove of a plating apparatus according to a second embodiment of the present invention.

圖5係表示關於本發明第3實施形態之電鍍裝置之他槽之構成圖。Fig. 5 is a view showing the configuration of a groove of a plating apparatus according to a third embodiment of the present invention.

圖6係表示關於本發明第4實施形態之電鍍裝置之構成圖。Fig. 6 is a view showing the configuration of a plating apparatus according to a fourth embodiment of the present invention.

圖7係表示關於本發明第5實施形態之電鍍裝置之構成圖。Fig. 7 is a view showing the configuration of a plating apparatus according to a fifth embodiment of the present invention.

圖8A及圖8B係表示關於本發明第6實施形態之電鍍裝置之鍍敷槽之構成圖。8A and 8B are views showing a configuration of a plating tank of a plating apparatus according to a sixth embodiment of the present invention.

圖9A及圖9B係表示關於本發明第7實施形態之電鍍裝置之鍍敷槽之構成圖。9A and 9B are views showing a configuration of a plating tank of a plating apparatus according to a seventh embodiment of the present invention.

圖10係表示關於本發明第8實施形態之電鍍裝置之構成圖。Fig. 10 is a view showing the configuration of a plating apparatus according to an eighth embodiment of the present invention.

圖11A係表示關於本發明第9實施形態之電鍍裝置之他槽的第1隔壁之圖,圖11B係圖11A之XIB-XIB線剖面圖。Fig. 11A is a view showing a first partition wall of a tank of a plating apparatus according to a ninth embodiment of the present invention, and Fig. 11B is a sectional view taken along line XIB-XIB of Fig. 11A.

圖12係表示使用於實施例1之電鍍裝置之構成圖。Fig. 12 is a view showing the configuration of a plating apparatus used in the first embodiment.

圖13A係表示使用於實施例2之電鍍裝置之構成圖,圖13B係圖13A之XIIIB-XIIIB線剖面圖。Fig. 13A is a view showing a configuration of a plating apparatus used in the second embodiment, and Fig. 13B is a sectional view taken along line XIIIB-XIIIB of Fig. 13A.

圖14係表示使用於實施例3之電鍍裝置之構成圖。Fig. 14 is a view showing the configuration of a plating apparatus used in the third embodiment.

圖15A及圖15B係用於說明在於實施例1、3之導通孔的凹陷量之測定方法之剖面圖。15A and 15B are cross-sectional views for explaining a method of measuring the amount of depression of the via holes in the first and third embodiments.

圖16係表示在於實施例1~3用於測定伸展率及抗張力之試驗片之形狀之平面圖。Fig. 16 is a plan view showing the shapes of the test pieces for measuring the elongation and the tensile strength in Examples 1 to 3.

圖17係用於說明在於實施例2之通孔之均一性(throwing power)之評估方法之剖面圖。Fig. 17 is a cross-sectional view for explaining a method of evaluating the throwing power of the through hole of the second embodiment.

11...電鍍裝置11. . . Plating device

13...鍍敷槽13. . . Plating tank

15...他槽15. . . He slot

17...第1空間17. . . First space

19...第2空間19. . . Second space

20...他槽本體20. . . He slot body

21...第1隔壁twenty one. . . 1st next door

23...上緣部twenty three. . . Upper edge

29...輸送側配管29. . . Conveying side piping

29a...供給口29a. . . Supply port

41...回送側配管41. . . Return side piping

41a...端部41a. . . Ends

41b...端部41b. . . Ends

41c...端部41c. . . Ends

47...槽本體47. . . Slot body

49...溢出槽49. . . Overflow slot

51...側壁51. . . Side wall

53...上緣部53. . . Upper edge

55...陽極55. . . anode

57...陰極57. . . cathode

59...陽極袋59. . . Anode bag

61...噴嘴61. . . nozzle

63...幫浦63. . . Pump

64...幫浦64. . . Pump

65...過濾器65. . . filter

Claims (17)

一種電鍍裝置,包括:儲留鍍液之鍍敷槽;他槽,其係與上述鍍敷槽為別體之槽,上述鍍液於與上述鍍敷槽之間循環;及輸送側配管,由上述鍍敷槽對上述他槽輸送上述鍍液;上述他槽,於其內部具有:第1空間;及位於較該第1空間為下游側之第2空間,而具有:上述第1空間內的上述鍍液之中超過既定高度的部分由上述第1空間流入上述第2空間,上述鍍液在於該第2空間在空氣中流下的構造,上述他槽,具有:第1隔壁,其係為隔開上述第1空間與上述第2空間而上下方向延設者;及第2隔壁,其係將上述第1空間的內部,分成使上述鍍液中的金屬粒子沉降的沉降空間,及位於該沉降空間之上游側,由上述輸送側配管之供給口供給上述鍍液之供給空間,而上下方向延設者。 An electroplating apparatus comprising: a plating tank for storing a plating solution; a groove which is a groove of the plating tank; the plating solution is circulated between the plating tank; and a conveying side pipe, The plating tank conveys the plating solution to the other tank; the other tank has a first space therein and a second space located downstream of the first space, and has a first space A portion of the plating solution that exceeds a predetermined height flows into the second space from the first space, and the plating solution is a structure in which the second space flows down in the air, and the other groove has a first partition wall which is separated by a partition. Opening the first space and the second space to extend in the vertical direction; and the second partition wall dividing the inside of the first space into a sedimentation space for sedimenting metal particles in the plating solution, and located in the sedimentation On the upstream side of the space, the supply space of the plating solution is supplied from the supply port of the transport-side pipe, and is extended in the vertical direction. 如申請專利範圍第1項所述的電鍍裝置,其中上述他槽,具有上述第1空間的上述鍍液溢出在於上述第1隔壁位於上述既定高度之上緣部流入上述第2空間之構造。 The plating apparatus according to claim 1, wherein the plating solution having the first space overflows in a structure in which the first partition wall is located at an upper edge of the predetermined height and flows into the second space. 如申請專利範圍第1項所述的電鍍裝置,其中上述他槽,具有上述第1空間的上述鍍液通過在於上述第1隔壁位於上述既定高度之貫通口流入上述第2空間之構造。 The plating apparatus according to claim 1, wherein the plating solution having the first space is configured to flow into the second space through a through opening of the first partition wall at the predetermined height. 如申請專利範圍第2項所述的電鍍裝置,其中上述第1隔壁的上述上緣部,具有向上述第2空間側延設之突出片,上述突出片具有由上述第1隔壁的側面離隔之先端。 The plating apparatus according to claim 2, wherein the upper edge portion of the first partition wall has a protruding piece extending toward the second space side, and the protruding piece has a side surface separated by the first partition wall Apex. 如申請專利範圍第4項所述的電鍍裝置,其中上述突出片,具有向上述第2空間側橫方向延伸之橫部及由該橫部之先端向下方向延伸之縱部,該縱部之先端與上述第1隔壁之側面離隔。 The plating apparatus according to claim 4, wherein the protruding piece has a lateral portion extending in a lateral direction toward the second space side and a vertical portion extending downward from a distal end of the lateral portion, the vertical portion The tip end is spaced apart from the side surface of the first partition wall. 如申請專利範圍第1至5項中任一項所述的電鍍裝置,其中進一步具有由上述鍍敷槽對上述他槽輸送上述鍍液之輸送側配管,上述輸送側配管,具有對上述第1空間供給上述鍍液之供給口,上述供給口,位於較上述既定高度為下方。 The plating apparatus according to any one of claims 1 to 5, further comprising: a transport-side pipe that transports the plating solution to the other tank by the plating tank, and the transport-side pipe has the first The space is supplied to the supply port of the plating solution, and the supply port is located below the predetermined height. 如申請專利範圍第6項所述的電鍍裝置,其中上述鍍液由上述供給口之吐出方向朝向上述他槽之內側面。 The plating apparatus according to claim 6, wherein the plating solution is directed from a discharge direction of the supply port toward an inner side surface of the other groove. 如申請專利範圍第1項所述的電鍍裝置,其中上述第2隔壁,具有設於較上述既定高度為下方,連通上述沉降空間與上述供給空間之複數連通口。 The plating apparatus according to claim 1, wherein the second partition wall has a plurality of communication ports that are provided below the predetermined height and that communicate with the settling space and the supply space. 如申請專利範圍第1項所述的電鍍裝置,其中上述第2隔壁之上緣部位於上述既定高度或者較上述既定高度為下方。 The plating apparatus according to claim 1, wherein the upper edge of the second partition wall is located at the predetermined height or lower than the predetermined height. 如申請專利範圍第1項所述的電鍍裝置,其中進一步包括:由上述他槽將上述鍍液送回上述鍍敷槽之回送側配管;及將上述他槽所排出之上述鍍液送回上述第1空間 之再供給配管。 The electroplating apparatus according to claim 1, further comprising: returning the plating solution to the return-side pipe of the plating tank by the tank, and returning the plating solution discharged from the tank to the tank First space Re-supply piping. 如申請專利範圍第1項所述的電鍍裝置,其中進一步包括:設於較上述第1空間為下游側之機械式攪拌機。 The plating apparatus according to claim 1, further comprising: a mechanical agitator disposed downstream of the first space. 如申請專利範圍第1項所述的電鍍裝置,其中上述鍍敷槽,具有:儲留上述鍍液之槽本體;及該槽本體一體設置,上述槽本體之上述鍍液溢出上述槽本體之側壁之上緣部而流入之溢出槽,該溢出槽,於內部具有:上游側空間;及位於較該上游側空間為下游側之下游側空間,而具有上述鍍液由上述上游側空間流入上述下游側空間流下空氣中之構造。 The plating apparatus according to claim 1, wherein the plating tank has: a tank body for storing the plating solution; and the tank body is integrally provided, wherein the plating liquid of the tank body overflows a side wall of the tank body An overflow tank into which the upper edge portion flows, the overflow tank having an upstream side space therein; and a downstream side space located downstream of the upstream side space, and having the plating liquid flowing into the downstream from the upstream side space The construction of the air in the side space. 如申請專利範圍第12項所述的電鍍裝置,其中上述槽本體的上述上緣部,具有向上述溢出槽側延設之突出片,上述突出片具有與上述槽本體之側面離隔之先端。 The plating apparatus according to claim 12, wherein the upper edge portion of the groove body has a protruding piece extending toward the overflow groove side, and the protruding piece has a tip end spaced apart from a side surface of the groove body. 如申請專利範圍第1項所述的電鍍裝置,其中上述鍍液在在於上述第2空間流下空氣中的落差是10cm以上。 The plating apparatus according to claim 1, wherein the plating solution has a drop of 10 cm or more in the air in the second space. 如申請專利範圍第1項所述的電鍍裝置,其中上述鍍液係使用於鍍銅者,包含作為光亮劑之含硫有機化合物。 The plating apparatus according to claim 1, wherein the plating solution is used for copper plating, and contains a sulfur-containing organic compound as a brightening agent. 一種電鍍方法,使用包括:儲留鍍液之鍍敷槽;及與該鍍敷槽為別體之槽,上述鍍液於與上述鍍敷槽之間循環之他槽之如申請專利範圍第1至15項中任一項所述之電鍍裝置,上述他槽,於其內部具有:第1空間;及位於較第1空間為下游側之第2有空間,在於上述第1空間,將上述鍍液儲留至既定高度,使 上述鍍液中的金屬粒子沉降於上述第1空間之下方,使上述第1空間內的上述鍍液之中超過上述既定高度的部分流入上述第2空間,藉由使上述鍍液在於該第2空間流下空氣中而調整上述鍍液之溶存氧濃度之電氣鍍方法。 An electroplating method comprising: a plating bath for depositing a plating solution; and a groove which is separate from the plating bath, wherein the plating solution circulates between the plating tank and the plating tank as claimed in claim 1 The plating apparatus according to any one of the preceding claims, wherein the other tank has a first space therein and a second space located downstream of the first space, and the plating is performed in the first space. The liquid is stored to a predetermined height so that The metal particles in the plating solution are deposited below the first space, and a portion of the plating solution in the first space that exceeds the predetermined height flows into the second space, and the plating solution is in the second space. An electroplating method for adjusting the dissolved oxygen concentration of the above plating solution in a space under air. 如申請專利範圍第16項所述的電鍍方法,其中上述鍍液係使用於鍍銅者,包含作為光亮劑之含硫有機化合物。 The electroplating method according to claim 16, wherein the plating solution is used for copper plating, and comprises a sulfur-containing organic compound as a brightening agent.
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