TW201109478A - Electrolytic plating equipment and electrolytic plating method - Google Patents

Electrolytic plating equipment and electrolytic plating method Download PDF

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Publication number
TW201109478A
TW201109478A TW099130141A TW99130141A TW201109478A TW 201109478 A TW201109478 A TW 201109478A TW 099130141 A TW099130141 A TW 099130141A TW 99130141 A TW99130141 A TW 99130141A TW 201109478 A TW201109478 A TW 201109478A
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Taiwan
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space
plating
plating solution
tank
groove
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TW099130141A
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Chinese (zh)
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TWI503455B (en
Inventor
Toshihisa Isono
Shinji Tachibana
Naoyuki Omura
Shunsaku Hoshi
Kanako Matsuda
Koji Shimizu
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Uyemura C & Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02Tanks; Installations therefor
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/04Removal of gases or vapours ; Gas or pressure control
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/10Agitating of electrolytes; Moving of racks
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/16Regeneration of process solutions
    • C25D21/18Regeneration of process solutions of electrolytes
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

An electrolytic plating equipment includes: a plating tank for holding plating solution; and a separate tank apart from the plating tank, for holding the plating solution circulating between the plating tank and the separate tank. The separate tank contains a first space and a second space located downstream from the first space. The plating solution in the first space in an amount exceeding a specific height flows from the first space into the second space, and the plating solution falls through air in the second space.

Description

201109478 四、指定代表圖: )本案指定代表圖為:第( 1 )圖。 )本代表圖之元件符號簡單 說明: 1卜電鍍裝置; 13〜鍍敷槽; 15〜他槽; 17~第1空間 19〜第2空間; 20〜他槽本體 21〜第1隔壁; 2 3〜上緣部; 2 9〜輸送側配管; 29a〜供給〇 41〜回送側配管; 4 la〜端部; 4 lb〜端部; 41 c〜端部; 47〜槽本體; 49〜溢出槽; 51〜側壁; 5 3〜上緣部; 5 5〜陽極; 57~陰極; 59〜陽極袋; 61〜喷嘴; 63〜幫浦; 64〜幫浦; 6 5〜過濾器。 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 〇 六、發明說明: 【發明所屬之技術領域】 本發明係關於電鍍裝置及電鍍方法。 2 201109478 【先前技術】 電鐘係利用丨&lt; 用於例如在印刷電路板上形成配線圖案之用 迷等你丨如在硫酸銅電鍍,為得光澤、披膜物性、披覆性、 對導通孔的填亦^士 @ &amp; 、充1·生4的目的之披膜特性於鍍液添加有稱為 光亮劑、柔軟劑、承敕杰,丨欲, m 十整劑4的促進劑或抑制劑等的各種添 加劑。 該等添加劑,於電路板表面抑制劑有效地作用,於通 孔和導通孔之中藉由促進劑有效地作用,可促進對通孔的 彼覆或對導通孔的填孔。但是,在鍍液中促進劑變的過剩, 則以抑制劑抑制活性核成長的效果會下降,而無法得到緻 Φ的披膜降低披膜的物性。此外,對電路板表面的析出 抑制效果降低’而對通孔的覆蓋變差,對導通孔的填孔性 變差等的不良情形。另-方®,若在於鍍液中的促進劑不 足則促進產生活性核之效果下降,而無法得到緻密的披 膜’降低披膜的物性。必匕外’對通孔或導通孔内的促進效 果艾的不足,而對通孔的覆蓋性變差,對導通孔的填孔性 變差等的不良情形。因此,鍍液中的各種添加劑以適當的 平衡添加非常重要。 此外’鍍液中的溶存氧濃度’眾所周知係影響電鍍披 膜性能之主要原因之一。關於其理由,舉使用硫酸銅電鍍 的一般光亮劑之雙(3-硫丙基)二硫化物(sps)時之例加以 s兒明。即,在於鍍敷處理中發生以下的一連串的氧化還原 反應。於陰極的表面SPS被還原成為3_狒基丙烷—卜硫酸 (MPS)。SPS是在陰極附近由兩個mps回到一個SPS時藉由 3 201109478 將銅離子還原而作為促進劑作用。不參與該反應的㈣會 被溶存氧氧化而恢復成SPS。但是,如果溶存氧不足,則 MPS與Cu +鍵結以Cui-ΜΡς接接 „ + , MPS積畜。Cu + -MPS積蓄,則光亮劑濃 度變的過剩’而無法右公^呈 …兄刀仔到目標的披膜性能。氧濃度變 得過剩,則被氧氧化的MPS的量變多而還原銅離子的奶 的量降低’使促進效果不^,而無法充分得到目標得披膜 性能。 如此地,須要將鍍液中的溶存氧濃度調整在適正的範 圍I'M乍為陽極使用可溶性陽極時,因金屬銅的溶解等而 消耗溶存氧,而容易使鍍液中的溶存氧濃度變⑯,作為陽 極使用不溶性陽極時,由於從陽極會產线,固鑛〉夜中的 溶存氧濃度容易變高。因此,有各種錢液中的溶存氧濃 度調整在既定範圍的技術被提案。 例如日本特開20〇4-143478號公報,揭示有作為陽極 使用可溶性陽極之電鍍裝置。該裝置’包括:f堵留鍍液之 ㈣槽;及與—敷槽為別體之他槽,於上述錢敷槽與他 槽之間具有鑛液循環的構造。於該裝置,在他槽藉由透過 空氣吹入管將空氣吹入鍍液中,可將鍍液的溶存氧濃度維 持在5ppm以上’以解決披膜質量之惡化。 本特開2007-1 69700號公報’揭示作為陽極 :用不溶性陽極的電鍍方法。於該方法,在於鍍敷槽藉由 空氣或者惰性氣體搜拌鍍液,將錢的溶存氧濃度維持在 30mg/么升以下,而可長期間穩定地填充被鍍物中的* 孔内部。 貝通 201109478 然而,近年,在印刷電路板等的配線,由於通孔、導 通孔的微細化,而對鍍敷要求的品質也提升。例如,於鍍 液中有異物浮游,則有該異物成核而在鐘敷披膜的一部份 產生鍍瘤(瘤狀的部位),於電鍍裝置,設有由鍍液中分離 鍵液中的異物之過濾器。該過濾器係將鍍液過渡將鑛液中 的各種異物由鍍液分離。 但是,如果有很多例如銅粒子等的金屬粒子附著於過 濾器’則有因該金屬粒子消耗鍍液中的溶存氧,而使含於 鍍液之添加劑(例如硫系添加劑等)變質之情形。因此,為 了抑制鍍敷披膜的品質下降,須要頻繁地交換過濟器。 【發明内容】 本發月的目的在於提供可調整鍵液的溶存氧濃度的同 夺可減;起因於交換過遽器之成本之電鑛裝置及電鑛方 法。 本發明之電链褒置,包括:儲留錄液之錢敷槽;及他 L其係與亡述錢敷槽為別體之槽,上述鐘液於與上述鍍 曰之間循ί衣’上述他槽,於其内部具有 位於較該第1空間工間,及 -下游側之第2空F曰1,而具有:上述第 工s 、上述鍍液之中超過既定高度的部分由上述第丄 門机入上述第2空間,上述鍍液在於該帛2空間在空氣 中流下的構造。 乳 【實施方式] 5 201109478 。於以 以下,邊參照圖面詳細說明本發明之實施形態 下之各實施形態’舉對被鍍物進行銀銅之情形為例說明。 〈第1實施形態〉 如圖1所示,本發明之第i實施形態之電鍍裝置i i, 包括:鍍敷槽13;與該鍍敷槽13為別體之他槽15;由鍍 敷槽13輸送鍍液至他槽15之輸送側配管29;由他槽15 送回鍍液至鍍敷槽13之回送側配管41。 鍵敷槽13,具有:上部開口之略長方體形狀的槽本體 47 ;與該槽本體47 —體設置之溢出槽49。於槽本體47的 内部’配設有陽極55。此外,槽本體47,其構成可設置被 鍍物的陰極5 7。 陽極55,分別配設在陰極57的兩旁。作為陽極”, 使用可溶性陽極或不溶性陽極。作為可溶性陽極,例如可 使用銅板。此外,可溶性陽極,亦可使用例如將球狀的銅(銅 :)用:等所形成之網狀收容容器所收容者。該等鋼板或銅 可舉例如含有料含伽所形成者。作為不溶性陽極, 可使用例如對Ti -Pt塗敷氧化銦者。 各陽極55 ’係配置於可使鍍液流通而不使 過的陽極势从士 Μ β 查通 ““々内部。陽極袋59,係例如以 乙稀等的材料形成。 聚 陰極57與各陽極55之間,沿著陰 別配設有嘴嘴6卜各喷嘴61,設有將 ^度方向分 由他槽15輪送之链液向…側喷出之多數::配广41 -藉“—的—: 6 201109478 卜’陰極57周邊的鍍液的攪拌,在如上 之攪拌之外^ 上所述的噴流 卜,亦可以省略圖示之攪拌刀、攪拌槳 式授摔機的機械性㈣。此外,亦可併用以喷流之= 機械性攪拌。 &lt;攪拌與 於陽極55與陰極57的之間,由省略圖示的 施加電[。藉此’可對作為被鑛物的陰極57進行電鍛1 、/益出槽49 ’係一體地安裝於槽本體47的側部。於該 ’益出槽49,槽本體47内的鍍液會超過槽本體47的側壁51 的上緣部53而流入。於該溢出# 49,設有感測該槽内的 液水準的省略圖示的液面傳感器。藉由根據該液面傳感器 、感則-果進行控制幫浦63的驅動或停止,可調節溢出槽 4 9之液水準。 s 他槽15’具有:上部開口之略長方體形狀之他槽本體 2°;及將該他槽本體20的内部空間分成兩個的第i隔壁 21。第1隔壁2卜呈略矩形狀,由他槽本體2〇的底側向 上立設。藉由該第1隔壁21,將他槽15内部分成第上空 間17及位於該帛17之下游側之第2空旧9。如圖 及圖2八所不,第丄隔壁2卜具有:由他槽底側向上 、伸的隔壁主冑25,及由該隔壁主體25的上端向第2空 間19側延設之突出片2 7。 第1隔』21的上緣部23,設定於較他槽本體20的上201109478 IV. Designated representative map: ) The representative representative of the case is: (1). The symbol of the symbol of the representative figure is briefly described: 1 plating device; 13~ plating groove; 15~ his groove; 17~ first space 19~2 space; 20~ his groove body 21~1st partition; 2 3 ~ upper edge; 2 9 ~ transport side piping; 29a ~ supply 〇 41 ~ return side piping; 4 la ~ end; 4 lb ~ end; 41 c ~ end; 47 ~ slot body; 49 ~ overflow slot; 51 ~ side wall; 5 3 ~ upper edge; 5 5 ~ anode; 57 ~ cathode; 59 ~ anode bag; 61 ~ nozzle; 63 ~ pump; 64 ~ pump; 6 5 ~ filter. 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 〇 6. Description of the invention: [Technical Field of the Invention] The present invention relates to a plating apparatus and a plating method. 2 201109478 [Prior Art] The electric clock system uses 丨&lt;for the use of a wiring pattern for forming a wiring pattern on a printed circuit board, etc., for example, in copper sulfate plating, for gloss, film properties, drape, and conduction The filling of the hole is also the result of the purpose of adding a lightening agent, a softening agent, a sturdy agent, a scenting agent, or a promoter of the fourth agent. Various additives such as inhibitors. The additives act effectively on the surface of the circuit board and act to promote the filling of the via holes or the filling of the via holes by the effective action of the promoter in the via holes and the via holes. However, when the accelerator is excessively formed in the plating solution, the effect of suppressing the growth of the active nucleus by the inhibitor is lowered, and the physical properties of the pleats which are not caused by Φ are lowered. Further, the effect of suppressing the precipitation on the surface of the board is lowered, and the coverage of the via hole is deteriorated, and the hole filling property of the via hole is deteriorated. In addition, if the accelerator in the plating solution is insufficient, the effect of promoting the production of the active nucleus is lowered, and the dense film is not obtained, and the physical properties of the film are lowered. In addition, the outer surface of the through hole or the via hole is insufficient for the effect of the effect, and the coverage of the through hole is deteriorated, and the hole filling property of the via hole is deteriorated. Therefore, it is very important that the various additives in the plating solution are added in an appropriate balance. Further, the concentration of dissolved oxygen in the plating solution is known to be one of the main factors affecting the performance of the plating film. For the reason, a case of using a bis(3-thiopropyl) disulfide (sps) of a general brightener plated with copper sulfate will be described. That is, the following series of redox reactions occur in the plating treatment. The surface SPS on the cathode was reduced to 3_mercaptopropane-sulfuric acid (MPS). SPS acts as a promoter by reducing copper ions by 3 201109478 when two mps are returned to an SPS near the cathode. (4) that does not participate in the reaction will be oxidized by dissolved oxygen to recover into SPS. However, if the dissolved oxygen is insufficient, the MPS and Cu + bonds are connected by Cui-ΜΡς, and the MPS accumulates. Cu + -MPS accumulates, the concentration of the brightener becomes excessive, and the right public is not able to be presented... When the oxygen concentration becomes excessive, the amount of oxygen-oxidized MPS is increased and the amount of reduced copper ions is decreased, so that the promotion effect is not obtained, and the target film performance cannot be sufficiently obtained. In the ground, it is necessary to adjust the dissolved oxygen concentration in the plating solution to a proper range I'M. When the soluble anode is used for the anode, the dissolved oxygen is consumed due to the dissolution of the metallic copper, and the dissolved oxygen concentration in the plating solution is easily changed to 16 When an insoluble anode is used as the anode, the concentration of dissolved oxygen in the solid ore is likely to increase due to the production line from the anode. Therefore, various techniques have been proposed in which the concentration of dissolved oxygen in the liquid solution is adjusted within a predetermined range. Japanese Patent Publication No. 20-144478 discloses a plating apparatus using a soluble anode as an anode. The apparatus 'includes: (4) a tank for blocking the plating solution; and a tank for the other side of the coating tank. Slot with his slot There is a structure of a mineral liquid circulation. In this device, the air is blown into the plating solution through the air blowing pipe, and the dissolved oxygen concentration of the plating solution can be maintained at 5 ppm or more to solve the deterioration of the quality of the film. JP-A-2007-1 69700 discloses a method of electroplating using an insoluble anode. In this method, the plating bath is used to mix the bath with air or an inert gas to maintain the dissolved oxygen concentration of the money at 30 mg. In the case of a printed circuit board or the like, the wiring of a printed circuit board or the like is thinned due to the miniaturization of the through holes and the via holes. The required quality is also improved. For example, if there is foreign matter floating in the plating solution, the foreign matter nucleates and a part of the bell coating is formed in the bellows (the tumor-like portion), and the plating device is provided with plating. a filter for separating foreign matter in the key liquid in the liquid. The filter separates the various foreign matters in the ore liquid from the plating solution by a plating solution. However, if many metal particles such as copper particles are attached to the filter, Due to this The metal particles consume dissolved oxygen in the plating solution, and the additives contained in the plating solution (for example, a sulfur-based additive) are deteriorated. Therefore, in order to suppress the deterioration of the quality of the plating film, it is necessary to frequently exchange the filter. SUMMARY OF THE INVENTION The purpose of the present month is to provide an electric ore device and an electric ore method which can reduce the dissolved oxygen concentration of the key liquid; the electric chain device and the electric ore method which are caused by the cost of exchanging the filter. : The money storage tank for storing liquid recording; and the groove of the L-series and the dead money-slotting tank, the above-mentioned clock liquid is circulated between the above-mentioned rhodium-plating and the above-mentioned other tank, which is located in the interior thereof. The first space chamber and the second space F曰1 on the downstream side have: the portion s and the portion of the plating solution that exceeds a predetermined height are inserted into the second space by the first door machine, and the plating is performed The liquid is in a configuration in which the space of the crucible 2 flows down in the air. Milk [Embodiment] 5 201109478. Hereinafter, each embodiment of the embodiment of the present invention will be described in detail with reference to the drawings, and a case where silver or copper is to be plated is described as an example. <First Embodiment> As shown in Fig. 1, a plating apparatus ii according to an i-th embodiment of the present invention includes a plating tank 13; a tank 15 having a separate body from the plating tank 13; and a plating tank 13 The plating solution is transported to the transport side piping 29 of the other tank 15; the plating liquid is returned from the other tank 15 to the return side piping 41 of the plating tank 13. The key application groove 13 has a groove body 47 having a substantially rectangular parallelepiped shape with an upper opening, and an overflow groove 49 provided integrally with the groove body 47. An anode 55 is disposed inside the tank body 47. Further, a groove body 47 constituting a cathode 57 to which a plated object can be placed is formed. The anodes 55 are disposed on both sides of the cathode 57, respectively. As the anode, a soluble anode or an insoluble anode is used. As the soluble anode, for example, a copper plate can be used. Further, the soluble anode can be accommodated, for example, in a mesh-shaped storage container formed of spherical copper (copper:) or the like. These steel sheets or copper may, for example, be formed by containing a gamma. As the insoluble anode, for example, a coating of indium oxide on Ti-Pt may be used. Each anode 55' is disposed so that the plating solution can be circulated without causing The anode potential is passed from the gentry β to “the inside of the crucible. The anode pouch 59 is formed, for example, of a material such as ethylene. The polycathode 57 and each anode 55 are provided with a mouthpiece 6 along the cathode. Each of the nozzles 61 is provided with a plurality of chain liquids which are sent by the groove 15 in the direction of the direction to the side of the ...: a wide range of 41 - by "---: 6 201109478 卜" plating solution around the cathode 57 Stirring, in addition to the above-mentioned stirring, the mechanical properties of the stirring knife and the stirring paddle type weighing machine shown in the figure (4) may be omitted. In addition, it can also be used in combination with jetting = mechanical agitation. &lt;Stirring is applied between the anode 55 and the cathode 57, and electricity is applied by an illustration (not shown). Thereby, the electric forging 1 and the extraction groove 49' of the cathode 57 as the mineral can be integrally attached to the side portion of the tank body 47. In the "extraction groove 49", the plating solution in the groove body 47 flows in beyond the upper edge portion 53 of the side wall 51 of the groove body 47. In the overflow #49, a liquid level sensor (not shown) that senses the liquid level in the tank is provided. The liquid level of the overflow tank 4 can be adjusted by controlling the driving or stopping of the pump 63 according to the level sensor and the sensor. The other groove 15' has a groove body 2 of a slightly rectangular parallelepiped shape having an upper opening; and an i-th partition wall 21 for dividing the internal space of the other groove body 20 into two. The first partition wall 2 has a substantially rectangular shape and is erected from the bottom side of the groove body 2〇. The inside of the other tank 21 is divided into an upper space 17 and a second empty space 9 located on the downstream side of the crucible 17 by the first partition wall 21. As shown in Fig. 2 and Fig. 2, the second partition wall 2 has a partition main flange 25 extending upward from the bottom side of the groove, and a protruding piece 2 extending from the upper end of the partition main body 25 toward the second space 19 side. 7. The upper edge portion 23 of the first partition 21 is set on the upper tank body 20

緣部為低的既定高廑。g卩..A 卩’他槽15,具有使超過第1空間 1 7内的錢液之中超過.+、Bir K上述既定高度的部分溢出上緣部 23’由第i空間17流進第2空間19的構造。於他槽15, 201109478 只有較第1隔壁21上緣部23為上方的空間,坌7 + j第1空間17 與第2空間19連通。此外,他槽15,在較上绥 牡权上緣部23為下 方係以避免鍍液在第1空間17與第2空間19 ^ ^ Λ ^ •^間移動地 將第1二間17與第2空間19隔離的構造。 流入第2空間19的鍍液,在於該第2空 ^ 间丄9在空氣 中〜下。為如此地使鍍液在第2空間i 9在空氣中苄下在 於第2空間19的鍍液的液面,調節成位於較第1隔辟2丄 的上緣部23的上述既定高度為低的位置。 在於第2空間19的鐘液的液面,可μ由 』糟由例如控制設於 回送側配管41之幫浦64的驅動或停止而調節。此外,於 第2空間1 9,亦可設置感測該空間内的液面水準之省略圖 示的液面傳感器。可藉由根據該液面傳感器的感測結果進 行控制幫浦64的驅動或停止’調節第2办! η ^ 布乙二間19的液面水 準。 突出片27,係由隔壁主體25的上端向第2空間^則 延設’其先端由隔壁主體25㈣2空間19側的側面離隔。 藉由設置如此之突出片27,由第i空間17流入第2空間 19之鍍液’沿著突出片27的導至其先端部,由該先端部 之前面由突出片27離開而放出至空氣中。由於突出片27 的先端部與隔壁主體25的側面離隔’故可抑制鍍液沿著隔 壁主體25的側面流下。 於本實施形態,雖舉以第1隔壁21 ’具有如圖2人所 示之突出片27之情形為例說明,惟亦可為具有如圖2β〜圖 2D所示之變形例之突出片27的形態’亦可為具有如圖 8 201109478 及圖2F所示之變形例之突出片的形態。 於圖2B的變形例’突出片27,由隔壁主體25的上端 向第2空間19側且向斜上方延設。該變形例之情形,亦與 圖2A的形態同樣地’犬出片27的先端部與隔壁主體25的 側面離隔。因此’可能抑制鍍液沿著隔壁主體2 5的側面流 下’惟與圖2A的形態相比,鍍液有較容易沿著突出片27 的第2空間19側的面(下面)流下的趨勢。 於圖2C的變形例1突出片27,係由隔壁主體25的上 端向第2空間19側且向斜下方延設》該變形例之情形亦與 圖2A的形態同樣地’由於突出片27的先端部與隔壁主體 25的側面離隔’故可抑制鍍液沿著隔壁主體25的側面流 下。並且’由於突出片27向斜下方傾斜,故可大致防止鍍 液流進突出片2 7的下面(内面)。此點圖2 C的變形例較圖 2A的形態更佳。 於圖2D的變形例,突出片27,具有由隔壁主體25上 端向第2空間19側且向橫方向延伸的橫部27a及由該橫部 27a的先端向下方延伸的縱部27b。該縱部27b的先端由隔 壁主體25的側面離隔。該變形例之情形亦與圖2A的形態 同樣地,由於突出片27的先端部與隔壁主體25的側面離 隔’故可抑制鍍液沿著隔壁主體2 5的側面流下。 並且’於該形態’由第1空間17流入第2空間19之 鑛液’沿著橫部27a引導至其先端部後’沿著縱部27b向 下方流下。該先端部’與隔壁主體25的側面的距離很大。 因此,可大致預防鑛液流入突出片2 7的内面。在此點圖 201109478 2D的變形例較圖2A的形態更佳。 於圖2E及圖2F的變形例,第1隔壁21並不具有突出 片。在圖2E的變形例’第1隔€ 21係沿著垂直方向配置。 於圖2F的變形例,第(隔壁21對垂直方向傾斜配置。該 文形例的第1隔壁21係隨著由上方向下方位於下游側地傾 斜。 輸送側配管29,係其上游側的端部連接於溢出槽49 之底部及槽本體47的側壁51之下部,與溢出槽49及槽本 體47連通。輸送側配管29之下游側,設有對他槽15供給 鍍液之供給口 29a。 如圖1及圖3A所示,供給口 29a,係位於較第i空間 Π内的鍍液的液面為高之處,未與鍍液接觸。因此,由供 給口 29a吐出的鍍液,由供給口 29a向下方流下與儲留於 第1空間17内的鍍液接觸,則會對該鍍液造成某種程度的 衝擊。藉此,多少會使第i空間丨7内的鍍液流動。 如圖3B〜圖3E:所示的變形例,回送側配管2 &lt;供給 口 29a ,係位於較上述既定高度為下方之處。 J為供 給口 29a位於較第!空間17内的鍍液的液面為下方之声 浸潰於鍍液之形態。於該等變形例,由供給口 吐出的 鑛液’將直接供給於儲留在第丨空間17的鍍液的液中* 此’可較由供給口 29a 一旦被吐出於空氣中的鍍液落日 留於第1空間17的鍍液液面之圖3A之形態,減低對第= 空間17之錄液之衝擊。 、’ 於圖3C之變形例,回送側配管29的下游側端立 〇丨’被 10 201109478 彎曲成鐘液由供給口 29a吐出之方向朝他槽本體2G之内側 面施。於該變形例,較鍍液的吐出方向朝下方的圖犯之 形悲’可抑制儲留於笛1介pq 1 7 宙於第1二間17之鍍液之流動,特別是位 於下方側之鍍液之流動。 於圖3D之變形例,輸送側配管29之下游側之端部分 歧成夕數(該變形例為六個),輪送側配管Μ,具有多數吐 出鍍液之供給口 29a。藉此’由各供給口 29a吐出的鍍液 的吐出速度變得較圖3B的變形例小。因此,可抑制儲留於 第1空間17之鍍液之流動,特別是位於下方側之鍍液之流 動。 於圖3E之變形例,回送側配管29 ’具有其下游側的 内佐#又其他部位為大的構造。藉此,由供給口 Ma吐出之 鍍液之吐出速度變得較圖3B的變形例小。因此,可抑制儲 留於第1空間17之鍍液之流動,特別是位於下方側之錢液 之流動。 如圖1所示,回送侧配管41,其上游側的端部連接於 他槽本體20之側部’而與第2空間19連通。回送側配管 =,之下游侧之端部,分歧成複數(於本實施形態是三個)。 該等複數配管邊端部之中的二個端部41a、41b,分別與上 V對噴嘴61連接而分別與各個噴嘴61連通。複數配管 端。卩之剩下的端部41c,連接於槽本體47之底部而與栌 4 7 十 (之内部連通。該端部41c,係配置於與溢出槽49相 反側之槽本體47的側面。 在分歧處之更上游側之回送側配管41,裝有過濾器 11 201109478 6 5。在該濾器6 5之更上游側 列之回送側配管41設有幫浦64。 藉由驅動該幫浦64及上述之劫· 4駕浦63’鍍液在鍍敷槽13及 他槽1 5之間循環。過液器β ζ ’可將鍍液過濾、由锻液分離 鍍液中的各種異物。 鍍敷槽13與他槽15之 合S比(鍍敷槽13之容積:他 槽15之容積)以〇. ι:1〜3〇.ι .丄為佳,以〇· 3:1〜1〇:1更佳。 鑛敷槽13之谷積對於他槽^ ΰ之谷積未滿0. 1倍,則他槽 15的尺寸變的過大而並不實 — 良用另一方面,鍍敷槽13之 谷積對他槽15之容積超過3 借則有〉谷存氧在於他槽15 的調整能力不足之情形。 循環量(轉),係以循環 入田 衣速度(公升/分)x60(分/時間)丄 王浴置(公升)計算,對全浴 · t n. A;fe (循%電鍍裝置的鍍液之總量) 以5〜1〇〇轉,以1〇〜8〇 十产t 科尺佳循裱量未滿1 〇轉,則有 存氧在於他槽15的調整能 *貝】有冷 曰也证 b力不足之情形。另一方面,循環 罝超過100轉,需要很大 不實用。 衣幫浦或很多的循環幫浦而 作為鍍液使用例如硫酸銅鍵 對成為銅源的硫酸鋼加入既 酉文銅鑛液,係 液,可按昭必要六士欠 、瓜酸者。於該硫酸鋼鍍 稱為光亮劑=種添加劑。該添加劑,可舉例如被 加劑。作為唁有機A柔軟劑之促進劑或抑制劑等有機添 硫有機化==劑,可舉例如含氮有機化合物、含 3氧有機化合物等。且體而^ a 化合物,可舉例 /、體而&amp;,含硫有機 b選自由下述通式⑴〜⑷之硫系化合物。 12 201109478 • H- S -(CH2)a—(〇)b—s〇3M d)The edge is a low stiletto.卩 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他2 The structure of the space 19. In the other groove 15, 201109478, only the upper edge portion 23 of the first partition wall 21 is a space above, and the first space 17 of the 坌7 + j is in communication with the second space 19. In addition, the groove 15 is lower than the upper edge portion 23 of the upper oyster weight to prevent the plating solution from moving between the first space 17 and the second space 19 ^ ^ • ^ ^ ^ to move the first two 17 and the first 2 space 19 isolated structure. The plating solution flowing into the second space 19 is such that the second space 丄9 is in the air to the lower portion. In order to adjust the liquid level of the plating solution in the second space i 9 in the air in the second space 19, the plating solution is adjusted so that the predetermined height of the upper edge portion 23 of the first partition 2 is lower. s position. The liquid level of the clock liquid in the second space 19 can be adjusted by, for example, controlling the driving or stopping of the pump 64 provided on the return-side pipe 41. Further, in the second space 196, a liquid level sensor that senses the level of the liquid level in the space may be provided. The liquid level of the control unit 64 can be controlled or stopped according to the sensing result of the liquid level sensor, and the liquid level of the second chamber 19 can be adjusted. The protruding piece 27 is extended from the upper end of the partition main body 25 toward the second space, and the tip end thereof is separated from the side surface of the partition main body 25 (four) 2 on the space 19 side. By providing such a protruding piece 27, the plating liquid 'flowing into the second space 19 from the i-th space 17 leads to the leading end portion along the protruding piece 27, and the front surface of the leading end portion is separated from the protruding piece 27 to be discharged to the air. in. Since the tip end portion of the protruding piece 27 is separated from the side surface of the partition wall main body 25, the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25. In the present embodiment, the case where the first partition wall 21' has the protruding piece 27 as shown in FIG. 2 is taken as an example, but the protruding piece 27 having the modified example shown in FIGS. 2β to 2D may be used. The form 'may also be in the form of a protruding piece having a modification as shown in FIG. 8 201109478 and FIG. 2F. In the modification of Fig. 2B, the projecting piece 27 is extended from the upper end of the partition main body 25 toward the second space 19 side and obliquely upward. Also in the case of this modification, the tip end portion of the dog pull piece 27 is separated from the side surface of the partition wall main body 25 in the same manner as the embodiment of Fig. 2A. Therefore, it is possible to prevent the plating solution from flowing down along the side surface of the partition main body 25, but the plating liquid tends to flow down along the surface (lower surface) on the second space 19 side of the protruding piece 27 as compared with the embodiment of Fig. 2A. The protruding piece 27 of the modification 1 of Fig. 2C is extended from the upper end of the partition main body 25 toward the second space 19 side and obliquely downward. The case of this modification is also the same as the embodiment of Fig. 2A. The tip end portion is spaced apart from the side surface of the partition wall main body 25, so that the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25. Further, since the protruding piece 27 is inclined obliquely downward, it is possible to substantially prevent the plating liquid from flowing into the lower surface (inner surface) of the protruding piece 27. The modification of Fig. 2C is better than the form of Fig. 2A. In the modification of Fig. 2D, the protruding piece 27 has a lateral portion 27a extending from the upper end of the partition main body 25 toward the second space 19 and extending in the lateral direction, and a vertical portion 27b extending downward from the tip end of the lateral portion 27a. The tip end of the vertical portion 27b is separated from the side surface of the partition main body 25. Also in the case of this modification, the tip end portion of the protruding piece 27 is separated from the side surface of the partition wall main body 25 in the same manner as in the embodiment of Fig. 2A, so that the plating solution can be prevented from flowing down along the side surface of the partition wall main body 25. Further, in this form, the ore liquid which has flowed into the second space 19 from the first space 17 is guided to the tip end portion along the lateral portion 27a, and then flows downward along the vertical portion 27b. The tip end portion has a large distance from the side surface of the partition main body 25. Therefore, the inflow of the mineral liquid into the inner surface of the protruding piece 27 can be substantially prevented. At this point, the modification of 201109478 2D is better than the form of FIG. 2A. In the modification of Figs. 2E and 2F, the first partition wall 21 does not have a protruding piece. In the modification of Fig. 2E, the first partition 21 is arranged in the vertical direction. In the modification of Fig. 2F, the partition wall 21 is disposed obliquely to the vertical direction. The first partition wall 21 of the document example is inclined on the downstream side from the upper side to the lower side. The transport side piping 29 is the upstream side end. The portion is connected to the bottom portion of the overflow groove 49 and the lower portion of the side wall 51 of the groove body 47, and communicates with the overflow groove 49 and the groove body 47. On the downstream side of the conveying-side pipe 29, a supply port 29a for supplying plating liquid to the other groove 15 is provided. As shown in Fig. 1 and Fig. 3A, the supply port 29a is located higher than the liquid level of the plating solution in the i-th space, and is not in contact with the plating solution. Therefore, the plating solution discharged from the supply port 29a is When the supply port 29a flows downward and comes into contact with the plating solution stored in the first space 17, the plating solution is caused to have a certain degree of impact. This causes the plating solution in the i-th space 丨7 to flow somewhat. 3B to 3E, the return-side pipe 2 &lt;the supply port 29a is located below the predetermined height. J is the plating solution in which the supply port 29a is located in the first space 17. The liquid surface is submerged in the form of a plating solution. In these variants, the spit is spit from the supply port. The mineral liquid 'will be directly supplied to the liquid of the plating liquid stored in the second space 17 * This can be left in the plating liquid of the first space 17 by the supply port 29a once it is discharged into the air. In the form of Fig. 3A, the impact on the liquid recording of the first space 17 is reduced. In the modification of Fig. 3C, the downstream side end of the return side pipe 29 is bent by 10 201109478 into a clock liquid supply port. The direction of the discharge of 29a is applied to the inner side of the groove body 2G. In this modification, the shape of the plating liquid is lower than that of the discharge direction of the plating liquid, which can inhibit the storage of the flute 1 in the pq 1 7 in the first two The flow of the plating solution between the two, in particular, the flow of the plating liquid on the lower side. In the modification of Fig. 3D, the end portion on the downstream side of the conveying-side pipe 29 is erected (the modification is six), the wheel The supply-side pipe Μ has a supply port 29a for discharging a plurality of plating solutions. The discharge rate of the plating solution discharged from each of the supply ports 29a is smaller than that of the modification of Fig. 3B. Therefore, storage in the first space can be suppressed. The flow of the plating solution of 17, especially the flow of the plating liquid on the lower side. The modification of Fig. 3E The return-side piping 29' has a structure in which the other side of the downstream side is in a large structure. Thereby, the discharge speed of the plating liquid discharged from the supply port Ma becomes smaller than the modification of Fig. 3B. The flow of the plating liquid stored in the first space 17, in particular, the flow of the liquid liquid on the lower side. As shown in Fig. 1, the upstream side end portion of the return-side piping 41 is connected to the side of the tank body 20. In the second space 19, the end portion of the downstream side is divided into a plurality of (three in the present embodiment). Two end portions 41a of the plurality of side ends of the plurality of pipes, 41b is connected to the upper V nozzle 61 and communicates with each nozzle 61. Multiple piping ends. The remaining end portion 41c is connected to the bottom of the groove body 47 and communicates with the inside of the groove body 47. The end portion 41c is disposed on the side surface of the groove body 47 on the side opposite to the overflow groove 49. The return-side pipe 41 on the upstream side is provided with a filter 11 201109478 6 5. The return-side pipe 41 on the upstream side of the filter 65 is provided with a pump 64. By driving the pump 64 and the above The robbery of 4 driving Pu 63' is circulated between the plating tank 13 and the tank 1 5 . The liquid separator β ζ 'filters the plating solution and separates various foreign materials in the plating solution from the forging liquid. 13 is the ratio of S to his groove 15 (the volume of the plating tank 13: the volume of his groove 15) is 〇. ι:1~3〇.ι .丄 is better, 〇· 3:1~1〇:1 More preferably. The grain product of the ore tank 13 is less than 0.1 times for the valley product of the tank, and the size of the groove 15 is too large and not true - on the other hand, the plating tank 13 The volume of grain in the tank 15 exceeds 3, and there is a case where the oxygen storage in the tank is insufficient in the adjustment capacity of the tank 15. The circulation amount (rotation) is the speed of the circulation (liters per minute) x60 (minutes/time) King Bath set (liters) calculation, for the whole bath · t n. A; fe (the total amount of plating solution by the % plating device) to 5~1〇〇, to 1〇~8〇10 production t If the amount of sputum is less than 1 〇 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The pump or a lot of circulating pumps are used as a plating solution, for example, a copper sulfate bond is used to add a copper source to a copper source, and the copper is added to the copper ore liquid, and the liquid can be used as a sulphuric acid. The steel plating is referred to as a brightener=species additive. The additive may, for example, be an additive. The organic sulfur-adding organic compound such as a promoter or an inhibitor of the hydrazine organic A softener may, for example, be a nitrogen-containing organic compound. The compound containing 3 oxygen, etc., and the compound of the compound, can be exemplified /, and the sulfur-containing organic b is selected from the sulfur-based compounds of the following general formulae (1) to (4). 12 201109478 • H-S - (CH2 ) a—(〇)b—s〇3M d)

^ —(CH2)a—(〇)b—SO3M (S)c—(CH2)a—(0)b—S03M ⑵ R1\ S—(CHs)il一(CH〇H)广(CH2)e—⑼b—S〇3M ⑶ s 一⑽,备„ (式中R&gt;、R2及R3係分別表示碳數的烷基,M係表 不氫原子或驗金屬,a係表示卜8之整數,b、^d係分 別表示0或1。) 此外,作為含氮有機化合物,可使用習知者,可舉例 如3級胺化合物、4級鍵化合物等。作為含氧有機化合物, 可使用習知者,可舉例如聚乙烯乙二醇等的聚醚系化合物 等。 I硫酸銅鑛液的各成分,亦可將因連續進行電鍛銅而減 乂的部分按照需要添加補充液等補充。藉此,可連續地進 行電鍍銅。此外,使用可溶性陽極時,亦可由該可溶性陽 極補充銅離子。此外,使用不溶性陽極時,亦可於鑛敷槽 3之外另外設置可供給銅離子的槽,由該槽對錢敷槽 銅離子。 其次,說明本實施形態之電鍍裝置丨丨的動作。首先, 在建浴時’於鑛敷槽13之槽本體47及溢出槽49,以及他 201109478 槽1 5之第1空間17及第2空間1 9儲留既.定量的鍍液。 接著’驅動幫浦63及幫浦64使鍍液在鍍敷槽13與他 槽15之間循環。溢出槽49及第2空間19的液面水準,可 藉由控制幫浦63及幫浦的驅動或停止調節。以此狀態, 將被鍍物陰極57浸潰於槽本體4?的鍍浴,於陽極Η與陰 木 之間通電。藉此,於被鑛物電鍵銅。被锻物鍵敷結束 則與其他者交換依序進行電鍍銅。 其人°兒明鍍液之流向。當驅動幫浦6 4,則透過回送 側配官41對槽本體47内提供鍍液。對該槽本體〇提供鍍 液’則與供給之液量相同份量的鍍液越過槽本體47的側壁 51的上緣部5 3流入溢出槽4 g。 此外,驅動幫浦63,則溢出槽49及槽本體47内的鏟 液透過輸送側配管29對他槽15之第】空間17供給。於鍍 液中’有起因於例如由险搞k 7 1_ =極57脫洛或在可溶性陽極產生的 殘逢而產生的銅粒子等的異物浮游。於他槽15之第丄空間 1 7,密度較鍍液大的銦如;脸_ 叼刮粒子將沉降而沉澱在第1空間丨7的 底部。 另-方面’透過送侧配管29對第i空間17供_ 則與供給之液量相同份量的㈣越過第i隔壁Η的上緣 2 3流入第2空間1 9。流入笼9 Bn 机入第2空間19的鍍液,在第2 間1 9流下空氣中之後,到i幸綠 』運儲留於第2空間19的鍍液 液面。藉由鍍液如此地流下眭異於 下時暴露於空氣,而調整鍍液^ —(CH2)a—(〇)b—SO3M (S)c—(CH2)a—(0)b—S03M (2) R1\ S—(CHs)il—(CH〇H)Guang (CH2)e— (9) b—S〇3M (3) s I(10), prepared „ (wherein R&gt;, R2 and R3 are respectively alkyl groups having a carbon number, M is a hydrogen atom or a metal test, and a is an integer representing b, b. In addition, as a nitrogen-containing organic compound, a conventional one may be used, and, for example, a tertiary amine compound, a tertiary compound, or the like may be used. As the oxygen-containing organic compound, a conventional one may be used. For example, a polyether compound such as polyethylene glycol may be used. Each component of the copper sulfate ore solution may be supplemented with a replenishing liquid or the like as needed by continuously performing electric forging of copper. The copper plating may be continuously performed. Further, when a soluble anode is used, the copper ions may be supplemented by the soluble anode. Further, when an insoluble anode is used, a tank capable of supplying copper ions may be additionally provided in addition to the ore tank 3, The groove is used to deposit copper ions in the tank. Next, the operation of the plating apparatus 本 of the present embodiment will be described. First, in the tank of the ore tank 13 during the construction of the bath The body 47 and the overflow tank 49, and the first space 17 and the second space 19 of the 201109478 tank 15 retain a quantitative liquid amount. Then, the driving pump 63 and the pump 64 are used to make the plating solution in the plating tank. 13 circulates with the tank 15. The level of the overflow tank 49 and the second space 19 can be adjusted by controlling the driving or stopping of the pump 63 and the pump. In this state, the cathode 57 of the object is impregnated. The plating bath in the tank body 4? is energized between the anode crucible and the yin wood. Thereby, the copper is bonded by the mineral. When the forged material is bonded, the other is exchanged for copper plating. When the pump 6 6 is driven, the plating solution is supplied to the tank body 47 through the return side dispenser 41. The plating solution is supplied to the tank body ', and the plating solution having the same amount as the supplied liquid passes over the tank. The upper edge portion 53 of the side wall 51 of the main body 47 flows into the overflow groove 4g. Further, when the pump 63 is driven, the shovel in the overflow groove 49 and the groove main body 47 passes through the delivery side pipe 29 to the space 17 of the groove 15 Supply. In the plating solution, 'causes are caused by, for example, the danger of k 7 1_ = pole 57 detachment or the residue generated at the soluble anode. The foreign matter floating in the space of the child, etc., in the second space of the groove 15, the density of the indium is larger than that of the plating solution; the face _ 叼 scraping particles will settle and precipitate at the bottom of the first space 丨7. The side pipe 29 supplies _ to the i-th space 17 and the same amount of liquid as supplied (4) flows into the second space 1 through the upper edge 2 3 of the i-th partition wall. The plating liquid which flows into the second space 19 into the cage 9 Bn After the second air flow in the second space, the liquid is left in the liquid level of the second space 19. The plating liquid is exposed to the air and is exposed to the air, and the plating is adjusted. liquid

溶存氧濃度。具體而言,作A 1卞马陽極使用可溶性陽極55時 藉由鍍敷時將空氣中的氧取入辦、为 乳取入鍍液,可抑制鍍液的溶存 14 201109478 濃度的下降。另一方面,作為陽極使用不溶性陽極時,藉 由鍍敷時適度地將氧由鍍液釋放到空氣中,可抑制鍍液的 溶存氧濃度的上升。 溶存氧濃度,可藉由改變鍍液流下空氣中的時間,流 下空氣中時與空氣的接觸表面積等調整。鍍液流下空氣中 的時間,流下空氣中時與空氣的接觸表面積,可藉由改變 例如第1隔壁21的上緣部23與第2空間19内的鍍液液面 的距離,改變鍍液溢出之上緣部23的寬度而調節。 在於鍍敷槽13之槽本體47之鍍液的溶存氧濃度,以 4〜2〇mg/升為佳。溶存氧濃度未滿4mg/升或超過2〇mg/升, 則有鍍敷品質下降之虞。具體而言,例如有鍍敷披膜的延 伸率、抗張力等的披膜物性下降,或在於印刷電路板之通 孔的均一性(TP)下降,導通孔的填孔性下降(凹陷量變大) 之情形。 於本實施形態’由於如上所述地第1空間17的鍍液溢 出而流入第2空間1 9,故藉由如此之溢出之鍍液的流下將 空氣捲入鍍液。藉此,可使鍍液中的溶存氧濃度接近飽和 洛存氧濃度。空氣,係以氧(約20%)及氮(約80%)為主要的 成分。此外,作為基準,例如25t的水的飽和溶存氧濃度 約為8. lmg/升❺鍍液中的溶存氧濃度較上述較佳的範圍 (4~20mg/升)小時’藉由溢出使鍍液流下而使空氣中的氧溶 入鍍液中,使鍍液中的溶存氧濃度接近飽和溶存氧濃度。 藉此,可容易地將鍍液中的溶存氧濃度調整在上述較佳的 範圍。另一方面,鍍液中的溶存氧濃度較上述較佳的範圍 15 201109478 大時,藉由溢出使鍍液流下而使溶入鍍液令的氧的一部 分’因空氣中之氮的影響而適當地釋出於空氣中,使鍍液 中的〉谷存氧濃度接近飽和溶存氧濃度。藉此,可將鐘液中 的溶存氧濃度調整為上述較佳的範圍。 第1隔壁21的上緣部23與第2空間19内的鍍液液面 的距離(落差),並無特別限定,可有效地調整溶存氧濃度 之點’以1 Ocm以上為佳,以15cm以上更佳。此外,為了 避免他槽15尺寸變的過大落差以i〇0cm以下為佳。 此外’於本實施形態,例示於他槽15内設置1隔壁, 僅使鍍液溢出一次之構成,惟亦可如後所述藉由在他槽本 體内設置複數隔壁,使在於他槽15的溢出次數為複數次。 在可提高溶存氧濃度的調整效率之點’在於他槽15的溢出 次數以2次以上為佳。此外,為避免他槽15尺寸變的過大, 溢出次數以5次以下為佳。 如以上所說明在第1實施形態,於上述他槽15,鑛液 之中超過上述既定高度的部分從第1空間17流入第2空間 19,既定高度以下的部分則停留在第1空間I?内。因此, 可使停留在該第1空間17的鍍液中的金屬粒子沉降在第i 空間17的下方。只要如此地將金屬粒子沉降集中在第丄空 間1 7的下方,則可藉由實施回收手段定期地將該等金屬粒 子回收’可有效地將鍍液中的金屬粒子去除。藉此,在於 電鍍裝置11,可降低過濾器65的交換頻率,依情形甚至 可省略過濾器65。此外,使第1空間17内的鍍液之中超 過上述既定高度的部分流入第2空間1 9使之於該第2空間 16 201109478 1 9在空氣中流下,即藉由使流動狀態的鑛液暴露於空氣可 調整鍍液的溶存氧濃度。因此,根據第1實施形態,可調 整錢液的溶存氧濃度的同時’可減低起因於交換過滤器的 成本。 具體而言,使用可溶性陽極作為陽極時,由於在鍍敷 時將空氣中的氧取入鍍液’故可抑制鍍液的溶存氧濃度的 下降。另一方面,使用不溶性陽極作為陽極時,由於鍍敷 時由鍍液將氧釋放到空氣中,故可抑制鍍液的溶存氧濃度 的上升。 此外,於第1實施形態,緣部2 3,僅向於第2空間19 側延。又並且,其先端部具有與第1隔壁21之側面離隔的 突出片27。因此,由第!空間17流入第2空間19的鍛液 沿著突出片27引導至該先端部,由該先端部之前端由突出 片27離開放出至空氣中。因此,於第】實施形態,可抑制 鍍液沿著第1隔壁21的側面流下。藉此,由於可增加鍍液 流下時與空氣的接觸面#,故可更有效地進行鍍液的溶存 氧濃度之調整。 〈第2實施形態&gt; 圖4係表示關於本發明之第2實施形態之電鍍裝置“ 之他槽15之構成圖。於該第2實施形態,他槽15之第^ 工間17的構造與帛J實施形態不$。再者,在此對與第1 實施形態相同的構成要素賦予相同的符號,省略其詳細說 明。 如圖4所示,他槽15加上他槽本體20及第1隔壁21, 17 201109478 進-步具有第2隔壁35。該第2隔壁35,呈略矩形狀由 他槽本體20的底面向上方立設。第2隔壁35,將第 間17的内部分成兩個空間。-邊的空間係由輸送側配; 29之供給口 29a供給鍍液之供給空間33,另一邊的空間’ 位於供給空間33的下流側,使鍍液中的金屬粒子32沉降 之沉降空間31。 第2隔壁35,具有連通沉降空間31與供給空間33之 複數連通口。該等連通口,係設於較上述既定高度,即第 1隔壁21的上緣部23的高度為下方。在於第!空間17内, 鑛液可透過上述複數連通口由供給空間33移至沉降空間 31。作為第2隔壁3 5 ’可使用例如,大致全面以既定間隔 排列複數貫通口之金屬板、樹脂板等。連通口調整為至少 可使金屬粒子透過的大小。 於第2實施形態,第1空間17,以第2隔壁35分成 沉降空間31與供給空間3 3,由輸送側配管2 9之供給口 2 9 a 對供給空間33供給鍍液。因此,即使在供給鍍液時儲留在 供給空間33的鍍液流動,該流動不易傳到沉降空間31。 因此’與於第1空間1 7沒有設置第2隔壁35之情形相比, 可使金屬粒子32更有效地沉降。 此外,於第2實施形態,第2隔壁35,具有設於較上 述既定高度為下方,連通沉降空間31與供給空間33之複 數連通口。因此,供給於供給空間33之鍍液,可透過第2 隔壁35的複數連通口分散移至沉降空間31。藉由鍍液如 此地透過複數的連通口分散流入沉降空間31可抑制儲留 18 201109478 於沉降空間31的鏟液之流動。 再者’省略說明其他的構成、作用及效果,但與上述 第1實施形悉相同。 〈第3實施形態〉 圖5係表示關於本發明第3實施形態之電鍍裝置11之 他槽15之構成圖。於該第3實施形態,他槽15之第1空 間17的構造與第1實施形態及第2實施形態不同。再者, 在此與第1實施形態相同的構成要素賦予相同的符號,省 略其詳細說明。 如圖5所示,他槽15’加上他槽本體20及第1隔壁 21’進一步具有第2隔壁35。該第2隔壁35,呈略矩形狀, 與上述第2實施形態同樣地,由他槽本體20的底面向上方 立设。第2隔壁3 5 ’將第1空間17的内部分成供給空間 33及沉降空間3卜與第2實施形態不同的地方是第3實施 形態的第2隔壁35並沒有設置複數的連通口。 於該第3實施形態,由於第2隔壁35的上緣部35a位 於較上述既定高度為下方之處’故第2隔壁35的上緣部 35a的高度位於較儲留於沉降空間31的鍍液的液面之下 方。藉此,在於第1空間17内之鍍液’可超過第2隔壁 35的上緣部35a由供給空間33移至沉降空間31。 因此’在第3實施形態,由於具有第2隔劈% ,, 4王0 0 ’故錢 液由供給口 29a供給於供給空間33時之流動不易傳到沉降 空間31。並且,由於鍍液越過第2隔壁π沾 扣的上緣部35a 由供給空間33流入沉降空間31,故可抑制蔣、、„ 市』析/儿降在沉降 19 201109478 空間下方的金屬粒子32捲起之情形。 再者,省略說明其他的構成、作用及效果,但與上述 第1實施形態相同。 〈第4實施形態〉 圖6係表示關於本發明第4實施形態之電鐘裝置11之 構成圖。於該第4實施形態,設有再供給配管43之點與第 1實施形態不同。再者,在此與第丨實施形態相同的構成 要素賦予同樣的符號,省略其詳細說明。 如圖6所示’於該第4實施形態,電鍍裝置π進一步 包括將他槽15所排出之鍍液送回第1空間17之再供給配 ^ 43。該再供給配管43之一端43a,與連接於他槽本體 20之侧部之下部之第2空間19連通。另一端43b,配置於 第1空間1 7的上部。於再供給配管43設有幫浦66及過濾 器68。 因此’於第4實施形態,將在於他槽15之第2空間 ^之鍵液之一部分,送回鍍敷槽13之前,可透過再供給 配管43再度對第1空間17供給。可進一步有效地去除鍍 液中的異物。 再者’省略說明其他的構成、作用及效果,但與上述 第1實施形態相同。 〈第5實施形態&gt; 圖7係表示關於本發明第5實施形態之電鍍裝置11之 構成圖。於該第5實施形態,於第2空間19内配設有下溢 用隔板45之點與第1實施形態不同。再者,在此與第1實 20 201109478 施形態相同的構成要素賦予同檨的效 丁丨』樣的符唬,省略其詳細說明。 如圖7所示,於該第5竇淪裕蚱 貫施形態,於在於較第1空間 1 7為下游側之第2空間19迮一牛勹以 J iy進步包括隔板45。該隔板45, 係於第2空間19内,於隔板45的下端邊與他槽本體2〇的 底側之間設有縫隙,並且在較該縫隙為上方係將第2空間 19隔成上游側區域與下游側區域二個區域地配設之板狀 體。因此,由第i空間17流入第2空間19之錢液,在於 第2空間19内由上述上游彳目丨丨r5&quot; 教7~ 好惻&amp;域移至上述下游側區域時必 定通過上述縫隙。因此,第2空間19内賴液,可更均句 地攪拌。 再者,省略說明其他的構成、作用及效果,但與上述 第1實施形態相同。 〈第6實施形態〉 圖8A及圖8B係表示關於本發明第6實施形態之電鍍 裝置11之鍍敷槽13的一部分之構成圖、圖8A係將鍍敷槽 13之一部分由側邊所視之圖,圖8B係將此由上方所視之 圖。於該第6貫施形態,鍍敷槽丨3之溢出槽49之構造與 第1實施形態不同。再者,在此與第i實施形態相同的構 成要素賦予同樣的符號,省略其詳細說明。 如圖8A及圖8B所示,於該第6實施形態,鍍敷槽13 之溢出槽49 ’於内部具有上游側空間71及較該上游側空 間71位於下游側的下游側空間73。溢出槽49,係以兩個 槽(第1槽7 5及第2槽7 7)所構成。上游側空間71,係以 第1槽75與槽本體47的側壁51所包圍的空間,下游側空 21 201109478 間73係以第2槽77與槽本體47的側壁51所包圍的空間。 槽本體47的側壁51的上緣部53、第?5的上緣 部、及第2槽77的上緣部之中,第2槽7?最高,第&quot;曹 75最低。如圖8B所示,於第1槽75的上緣部,,有一對 溢出部81。該等溢出部8卜為使鍍液溢出由第^^流 入第2槽77 ’較其他的部位更低。於第2槽?7的底側設 有連接輪送側配管29之貫通口 79。 藉此,鍍液將溢出槽本體47的侧壁51的上緣部53流 入第1槽75的上游側空間71,進一步溢出第i槽75的上 緣部流入第2槽77的下游側空間73,通過貫通口 ?9流入 輸送側配管29。如此地於第6實施形態,係鍍液在空氣中 下2 _人之構造。因此,不僅在他槽15,於鑛敷槽13的 溢出槽49,亦可進行鍍液溶存氧濃度之調整。 特別是在於第6實施形態,藉由使第1槽75的上緣部 到第2槽77之液面的落差大到1〇cni以上,使鏟液由上游 側空間71流入下游側空間73在空氣中流下時更有效地調 整溶存氧濃度。 此外’槽本體47的側壁51的上緣部53,具有與圖2 斤示者相同的突出片為佳。第1槽75的上緣部亦同樣地具 有與圖2所示者相同的突出片為佳。如此地上緣部具有突 出片時’由槽本體47流入第1槽75之鍍液,及由第1槽 75流入第2槽77之鍍液,沿著突出片引導至其先端部, 由該先端部之前端由突出片27離開放出至空氣中。因此, 可抑制鍍液沿著槽本體的侧面或第1槽7 5的侧面流下。藉 22 201109478 此,由於可增加鍍液流下時與空氣的接觸面積,故可更有 效地進行鍍液溶存氧濃度之調整。 再者,省略說明其他的構成、作用及效果,但與上述 第1實施形態相同。 〈第7實施形態〉 圖9A及圖9B係表示關於本發明第7實施形態之電鍍 裝置11之鍍敷槽13之一部分之構成圖、圖9 A係將鍍敷槽 1 3之一部分由側邊所視之圖,圖9B係將此由上方所視之 圖。於該第7實施形態’鍍敷槽13之溢出槽49之構造與 第1實施形態不同’而第1槽7 5的構造與第6實施形態不 同。再者’在此與第1實施形態及第6實施形態相同的構 成要素賦予同樣的符號,省略其詳細說明。 如圖9A及圖9B所示’於該第7實施形態,第1槽75 於其底面具有貫通口 85,於該等貫通口 85分別連接吐出 管83。上游侧空間71内的鍍液透過該等吐出管83,流下 二氣中流入下游側空間7 3。第1槽7 5的底部係配置在較 第2槽77的底部為上方。吐出管83可省略。 此外其他的構成、作用以及效果省略其說明,但是和 上述第1實施形態相同。 〈第8實施形態〉 圖10係表示關於本發明第8實施形態之電鍍裝置J i 之構成圖。於該第8實施形態,在於他槽15的溢出次數為 2 -人之點與第1實施形態不同。再者,在此與第1實施形 態相同的構成要素賦予同樣的符號,省略其詳細說明。 23 201109478 如圖 1 0 ^ίτ Τ ,、 於該第8實施形態,他槽15進一步且 有第3隔壁91。兮货。* /、 '^第3隔壁91’係呈略矩形狀,由他槽. 體20的底面向上太a &lt; 方立扠。他槽15之内部,藉由該第3隔 土 91刀成第2空間1 9及位於較該第2空間1 9下游側之第 3空严曰,93。葬ι·ι* ^ 工 稚此’可更加有效地調整鍍液的溶存氧濃度。 卜於該第8實施形態,在較使金屬粒子沉降的第 1空間17為下游側之第2空間19及第3空間93進一步包 括下溢用隔板45。與圖7之第5實施形態同樣地,該等隔 板45,係在於第2空間19及第3空間93内,於隔板c 之下端邊與他槽本體2〇之底面之間分別設置縫隙的同 時,在較該等縫隙為上方,將第2空間19隔成上游側的區 域及下游側的區域之二個區域,將第3空間93隔成上游側 的區域及下游側的區域之二個區域地配置之板狀體。因 此,由第1空間17流入第2空間19之鍍液,於第2空間 1 9内由上述上游側區域移至上述下游側區域時必定通過上 述縫隙。由第2空間19流入第3空間93之鍍液,由於在 第3空間93内由上述上游側區域移至上述下游側區域時必 定通過上述縫隙,故可將第2空間1 9及第3空間93之錄 液更均勻地攪拌。 第3隔壁91之上緣部24 ’具有與第1隔壁21之上緣 部23相同的構造。即,第3隔壁91之上緣部24,由於具 有如第1隔壁21之上緣部23之突出片27,故由第2空間 1 9流入第3空間93之鍍液,沿著突出片27引導至其先端 部,由其先端部之前端離開突出片27放出於空氣中。故, 24 201109478 可抑制鍵液沿著第3隔壁91的側面流下。藉此,由於可增 加鍍液流下時與空氣的接觸面積,故可更有效地進行調整 鑛液的溶存氧濃度。 再者’省略說明其他的構成、作用及效果,但與上述 第1實施形態相同。 〈第9實施形態〉 圖11A及圖11B係表示關於第9實施形態之電鍍裝置 之他槽之第1隔壁21之圖。於該第9實施形態,並非如上 隔壁21的上緣部23, 而是鍍 所述實施形態鍍液溢出第 液通過設於第1隔壁21之上述既定高度之貫通口 95,由 第1空間17流入第2空間19之構造。 於該第9實施形態,鍍液由第i空間17流入第2空間 19流時’亦可沿著第1丨 1隔壁21之側面流下,惟 ’惟不沿著第1Dissolved oxygen concentration. Specifically, when the soluble anode 55 is used as the A 1 hummer anode, oxygen in the air is taken in during plating, and the plating solution is taken in the milk to suppress the dissolution of the plating solution 14 201109478 The concentration is lowered. On the other hand, when an insoluble anode is used as the anode, oxygen is appropriately released from the plating solution into the air during plating, and an increase in the dissolved oxygen concentration of the plating solution can be suppressed. The dissolved oxygen concentration can be adjusted by changing the time in which the plating solution flows down the air, and the surface area of contact with the air when flowing in the air. The time during which the plating solution flows down the air and the surface area of contact with the air when flowing down the air can change the plating solution overflow by changing, for example, the distance between the upper edge portion 23 of the first partition wall 21 and the liquid level in the second space 19. The width of the upper edge portion 23 is adjusted. The concentration of dissolved oxygen in the plating solution of the tank body 47 of the plating tank 13 is preferably 4 to 2 mg/liter. When the dissolved oxygen concentration is less than 4 mg/liter or more than 2 〇mg/liter, the plating quality is deteriorated. Specifically, for example, the coating properties such as the elongation of the plating film and the tensile strength are lowered, or the uniformity (TP) of the through holes of the printed circuit board is lowered, and the hole filling property of the via hole is decreased (the amount of the depression is increased) The situation. In the present embodiment, since the plating solution overflows from the first space 17 and flows into the second space 179 as described above, air is entangled in the plating solution by the flow of the plating liquid thus overflowed. Thereby, the dissolved oxygen concentration in the plating solution can be made close to the saturated oxygen concentration. Air is mainly composed of oxygen (about 20%) and nitrogen (about 80%). Further, as a reference, for example, the saturated dissolved oxygen concentration of water of 25 t is about 8. The concentration of dissolved oxygen in the lmg/liter bismuth plating solution is smaller than the above preferred range (4 to 20 mg/liter). The oxygen in the air is dissolved in the plating solution by flowing down, so that the dissolved oxygen concentration in the plating solution is close to the saturated dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the plating solution can be easily adjusted to the above preferred range. On the other hand, when the concentration of dissolved oxygen in the plating solution is larger than the above-mentioned preferred range of 15 201109478, a part of the oxygen dissolved in the plating solution is caused by the overflow of the plating solution and is affected by the influence of nitrogen in the air. The ground release is in the air, so that the oxygen concentration in the plating solution is close to the saturated dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the clock solution can be adjusted to the above preferred range. The distance (difference) between the upper edge portion 23 of the first partition wall 21 and the plating liquid surface in the second space 19 is not particularly limited, and the point at which the dissolved oxygen concentration can be effectively adjusted is preferably 1 cm or more, and is 15 cm. The above is better. Further, in order to avoid an excessively large difference in the size of the groove 15 thereof, it is preferable that it is less than or equal to 0 cm. Further, in the present embodiment, a partition wall is provided in the other groove 15 and the plating solution is only once overflowed. However, as described later, by providing a plurality of partition walls in the tank body, the groove 15 is provided. The number of overflows is plural. The point at which the adjustment efficiency of the dissolved oxygen concentration can be increased is that the number of overflows of the tank 15 is preferably two or more. Further, in order to prevent the size of the groove 15 from becoming too large, the number of overflows is preferably 5 or less. As described above, in the first embodiment, the portion of the ore liquid that exceeds the predetermined height flows into the second space 19 from the first space 17, and the portion below the predetermined height stays in the first space I. Inside. Therefore, the metal particles remaining in the plating solution of the first space 17 can be settled below the i-th space 17. As long as the metal particles are settled and concentrated under the first space 17 in this manner, the metal particles can be periodically recovered by performing a recovery means to effectively remove the metal particles in the plating solution. Thereby, in the plating apparatus 11, the exchange frequency of the filter 65 can be lowered, and the filter 65 can be omitted even in the case. Further, a portion of the plating liquid in the first space 17 that exceeds the predetermined height flows into the second space 19 so that the second space 16 201109478 1 9 flows down in the air, that is, by flowing the mineral liquid. Exposure to air adjusts the dissolved oxygen concentration of the bath. Therefore, according to the first embodiment, the concentration of dissolved oxygen in the money liquid can be adjusted, and the cost due to the exchange filter can be reduced. Specifically, when a soluble anode is used as the anode, since oxygen in the air is taken into the plating solution during plating, the decrease in the dissolved oxygen concentration of the plating solution can be suppressed. On the other hand, when an insoluble anode is used as the anode, oxygen is released into the air by the plating solution during plating, so that an increase in the dissolved oxygen concentration of the plating solution can be suppressed. Further, in the first embodiment, the edge portion 23 is only laterally extended to the second space 19. Further, the tip end portion has a protruding piece 27 spaced apart from the side surface of the first partition wall 21. Therefore, by the first! The forging liquid that has flowed into the second space 19 in the space 17 is guided to the leading end portion along the protruding piece 27, and the front end portion of the leading end portion is opened and released into the air by the protruding piece 27. Therefore, in the first embodiment, it is possible to suppress the plating solution from flowing down along the side surface of the first partition wall 21. Thereby, since the contact surface # with air at the time of flowing the plating liquid can be increased, the dissolved oxygen concentration of the plating solution can be more effectively adjusted. <Second Embodiment> Fig. 4 is a view showing a configuration of a groove 15 of a plating apparatus according to a second embodiment of the present invention. In the second embodiment, the structure of the second chamber 17 of the groove 15 is The same components as those of the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted. As shown in Fig. 4, the groove 15 is provided with the groove body 20 and the first portion. The partition wall 21, 17 201109478 has a second partition wall 35. The second partition wall 35 has a substantially rectangular shape and is vertically erected from the bottom surface of the tank main body 20. The second partition wall 35 divides the inside of the first partition 17 into two spaces. The space on the side is provided by the transport side; the supply port 29a of 29 supplies the supply space 33 of the plating solution, and the space 'on the other side is located on the downstream side of the supply space 33, and the settling space 31 for sedimenting the metal particles 32 in the plating solution. The second partition wall 35 has a plurality of communication ports that communicate the settling space 31 and the supply space 33. The communication ports are provided at a predetermined height, that is, the height of the upper edge portion 23 of the first partition wall 21 is lower than that. In the space 17, the mineral liquid can be supplied through the plurality of communication ports The space 33 is moved to the settling space 31. As the second partition wall 35', for example, a metal plate or a resin plate in which a plurality of through holes are arranged at substantially regular intervals can be used. The communication port is adjusted to a size at which the metal particles can be transmitted. In the second embodiment, the first space 17 is divided into the sedimentation space 31 and the supply space 33 by the second partition wall 35, and the plating solution is supplied to the supply space 33 by the supply port 2 9 a of the transport-side pipe 2 9. Therefore, even in the supply The plating solution stored in the supply space 33 during the plating solution flows, and the flow is not easily transmitted to the sedimentation space 31. Therefore, the metal particles 32 can be made more effective than when the second partition 35 is not provided in the first space 17 In addition, in the second embodiment, the second partition wall 35 has a plurality of communication ports that are provided below the predetermined height and that communicate the settling space 31 and the supply space 33. Therefore, the plating liquid supplied to the supply space 33 is The plurality of communication ports of the second partition 35 can be dispersed and moved to the settling space 31. By dispersing the plating solution into the settling space 31 through the plurality of communication ports, the shovel of the storage space 31 can be suppressed. In addition, the other configurations, operations, and effects are omitted, but the same as the first embodiment described above. <Third Embodiment> FIG. 5 shows a tank 15 of the plating apparatus 11 according to the third embodiment of the present invention. In the third embodiment, the structure of the first space 17 of the groove 15 is different from that of the first embodiment and the second embodiment. Further, the same components as those of the first embodiment are given the same. The detailed description of the reference numerals is omitted. As shown in Fig. 5, the other groove body 15 and the first partition wall 21' further have a second partition wall 35. The second partition wall 35 has a substantially rectangular shape, and In the same manner as in the second embodiment, the bottom surface of the groove body 20 is erected upward. The second partition wall 3 5 ' divides the inside of the first space 17 into the supply space 33 and the settling space 3. The second partition wall 35 of the third embodiment is not provided with a plurality of communication ports. In the third embodiment, the upper edge portion 35a of the second partition wall 35 is located below the predetermined height. Therefore, the height of the upper edge portion 35a of the second partition wall 35 is located at a level higher than that of the plating liquid remaining in the settling space 31. Below the liquid level. Thereby, the plating liquid ' in the first space 17 can be moved from the supply space 33 to the sedimentation space 31 beyond the upper edge portion 35a of the second partition wall 35. Therefore, in the third embodiment, since the second barrier is provided, the flow of the money liquid supplied from the supply port 29a to the supply space 33 is less likely to be transmitted to the sedimentation space 31. Further, since the plating liquid flows into the sedimentation space 31 from the supply space 33 through the upper edge portion 35a of the second partition wall π, it is possible to suppress the volume of the metal particles 32 under the space of the settlement 19 201109478. In the case of the first embodiment, the configuration of the electric clock device 11 according to the fourth embodiment of the present invention is shown in Fig. 6 . In the fourth embodiment, the re-supply pipe 43 is different from the first embodiment. The same components as those in the third embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted. In the fourth embodiment, the plating apparatus π further includes a resupply device for returning the plating solution discharged from the tank 15 to the first space 17. The one end 43a of the resupply pipe 43 is connected to The second space 19 at the lower portion of the side portion of the tank body 20 communicates with each other. The other end 43b is disposed at the upper portion of the first space 17. The pump 66 and the filter 68 are provided in the resupply pipe 43. The embodiment will be in his slot 15 One of the two key liquids of the space can be supplied to the first space 17 again through the resupply pipe 43 before returning to the plating tank 13. The foreign matter in the plating solution can be further effectively removed. The fifth embodiment is the same as the above-described first embodiment. Fig. 7 is a view showing the configuration of the plating apparatus 11 according to the fifth embodiment of the present invention. The point where the underflow partition 45 is disposed in the space 19 is different from that of the first embodiment. Here, the same components as those of the first embodiment 20 201109478 are given the same effect as the same. The detailed description is omitted. As shown in Fig. 7, in the fifth sinus sinus, the second space 19 is located on the downstream side of the first space 177, and the burdock is improved by Jiy. a plate 45. The partition plate 45 is disposed in the second space 19, and a gap is formed between the lower end side of the partition plate 45 and the bottom side of the groove body 2〇, and the second space is formed above the slit. 19 is a plate-like body that is disposed in two regions of the upstream side region and the downstream side region. The money liquid that has flowed into the second space 19 from the i-th space 17 passes through the gap in the second space 19 when the upstream target 丨丨r5&quot; teaches the 7~ 恻&amp; field to move to the downstream side region. In the second space 19, the liquid can be stirred more uniformly. Further, other configurations, operations, and effects will be omitted, but the same as the above-described first embodiment. <Sixth embodiment> Figs. 8A and 8B FIG. 8A is a view showing a part of the plating tank 13 of the plating apparatus 11 according to the sixth embodiment of the present invention, and FIG. 8A is a view of a part of the plating tank 13 as viewed from the side, and FIG. 8B is viewed from above. Picture. In the sixth embodiment, the structure of the overflow groove 49 of the plating tank 3 is different from that of the first embodiment. The same components as those in the i-th embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in Fig. 8A and Fig. 8B, in the sixth embodiment, the overflow groove 49' of the plating tank 13 has an upstream side space 71 and a downstream side space 73 located on the downstream side of the upstream side space 71. The overflow tank 49 is composed of two grooves (the first groove 75 and the second groove 7 7). The upstream space 71 is a space surrounded by the first groove 75 and the side wall 51 of the groove body 47, and the downstream side space 21 201109478 is a space surrounded by the second groove 77 and the side wall 51 of the groove body 47. Among the upper edge portion 53 of the side wall 51 of the groove main body 47, the upper edge portion of the fifth portion, and the upper edge portion of the second groove 77, the second groove 7 is the highest, and the second is the lowest. As shown in Fig. 8B, a pair of overflow portions 81 are formed in the upper edge portion of the first groove 75. The overflow portion 8 is such that the plating solution overflows from the second groove 77' to be lower than the other portions. In the second slot? The bottom side of the seventh side is provided with a through port 79 that connects the piping side piping 29. As a result, the plating solution flows into the upstream side space 71 of the first groove 75 from the upper edge portion 53 of the side wall 51 of the overflow tank body 47, and further overflows the upper edge portion of the i-th groove 75 into the downstream side space 73 of the second groove 77. Through the through port? 9 Flows into the delivery side piping 29. As described above, in the sixth embodiment, the plating solution is in the air and has a structure of 2 persons. Therefore, not only in the tank 15, but also in the overflow tank 49 of the ore tank 13, the adjustment of the dissolved oxygen concentration in the plating solution can be performed. In particular, in the sixth embodiment, the shovel flows into the downstream side space 73 from the upstream side space 71 by making the drop of the liquid level of the upper edge portion of the first groove 75 to the second groove 77 larger than 1 〇 cii or more. The dissolved oxygen concentration is more effectively adjusted when flowing down in the air. Further, the upper edge portion 53 of the side wall 51 of the groove body 47 preferably has the same protruding piece as that of Fig. 2 . Similarly, the upper edge portion of the first groove 75 preferably has the same protruding piece as that shown in Fig. 2 . When the upper edge portion has the protruding piece, the plating liquid that has flowed into the first groove 75 from the groove main body 47 and the plating liquid that has flowed into the second groove 77 from the first groove 75 are guided to the tip end portion along the protruding piece, and the tip end is provided. The front end of the portion is separated from the air by the protruding piece 27. Therefore, it is possible to suppress the plating solution from flowing down along the side surface of the groove body or the side surface of the first groove 75. Borrowing 22 201109478, since the contact area with the air when the plating solution flows down can be increased, the concentration of the dissolved oxygen in the plating solution can be more effectively adjusted. Further, the other configurations, operations, and effects will be omitted, but are the same as those in the first embodiment. (Seventh Embodiment) Figs. 9A and 9B are views showing a configuration of a part of a plating tank 13 of a plating apparatus 11 according to a seventh embodiment of the present invention, and Fig. 9A shows a part of the plating tank 13 by a side. As seen from the figure, Fig. 9B is a view from the top. In the seventh embodiment, the structure of the overflow groove 49 of the plating tank 13 is different from that of the first embodiment. The structure of the first groove 75 is different from that of the sixth embodiment. The same components as those in the first embodiment and the sixth embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in Fig. 9A and Fig. 9B, in the seventh embodiment, the first groove 75 has a through hole 85 at its bottom surface, and the discharge pipe 83 is connected to each of the through holes 85. The plating solution in the upstream side space (71) passes through the discharge tubes (83), and flows into the downstream side space (73). The bottom of the first groove 753 is disposed above the bottom of the second groove 77. The discharge tube 83 can be omitted. The other configurations, operations, and effects are omitted, but are the same as those in the first embodiment. <Eighth Embodiment> Fig. 10 is a view showing the configuration of a plating apparatus J i according to an eighth embodiment of the present invention. In the eighth embodiment, the point that the number of overflows of the groove 15 is two - is different from that of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted. 23 201109478 As shown in Fig. 10, in the eighth embodiment, the groove 15 further has a third partition wall 91. Pick up the goods. * /, '^ The third partition wall 91' is slightly rectangular in shape, and the bottom surface of the body 20 is upwardly a &lt; square fork. The inside of the groove 15 is formed by the third partition 91 into a second space 19 and a third airtight portion 93 located on the downstream side of the second space 19. The burial ι·ι* ^ work is a more effective adjustment of the dissolved oxygen concentration of the plating solution. In the eighth embodiment, the second space 19 and the third space 93 on the downstream side of the first space 17 in which the metal particles have settled further include the underflow partition plate 45. Similarly to the fifth embodiment of Fig. 7, the partition plates 45 are provided in the second space 19 and the third space 93, and gaps are provided between the lower end sides of the partition plates c and the bottom surfaces of the groove bodies 2, respectively. At the same time, the second space 19 is partitioned into two regions of the upstream side and the downstream side, and the third space 93 is partitioned into the upstream side and the downstream side. Plates arranged regionally. Therefore, the plating solution that has flowed into the second space 19 from the first space 17 passes through the slit when it is moved from the upstream side region to the downstream side region in the second space 19. The plating solution that has flowed into the third space 93 from the second space 19 passes through the slit when moving from the upstream side region to the downstream side region in the third space 93, so that the second space 19 and the third space can be used. The recording liquid of 93 is more uniformly stirred. The upper edge portion 24' of the third partition wall 91 has the same structure as the upper edge portion 23 of the first partition wall 21. In other words, the upper edge portion 24 of the third partition wall 91 has the protruding piece 27 as the upper edge portion 23 of the first partition wall 21, so that the plating liquid flows into the third space 93 from the second space 19, along the protruding piece 27 It is guided to its tip end, and is separated from the protruding piece 27 by the front end of its tip end and placed in the air. Therefore, 24 201109478 can suppress the flow of the key liquid along the side of the third partition wall 91. Thereby, since the contact area with the air when the plating solution flows down can be increased, the dissolved oxygen concentration of the ore solution can be more effectively adjusted. Further, the other configurations, operations, and effects are omitted, but are the same as those in the first embodiment. <Ninth embodiment> Figs. 11A and 11B are views showing the first partition wall 21 of the other tank of the plating apparatus according to the ninth embodiment. In the ninth embodiment, instead of the upper edge portion 23 of the partition wall 21, the plating solution overflowing liquid of the embodiment is passed through the through hole 95 provided at the predetermined height of the first partition wall 21, and the first space 17 is provided. The structure that flows into the second space 19. In the ninth embodiment, when the plating solution flows into the second space 19 from the i-th space 17, it may flow down the side of the first 隔1 partition 21, but only along the first

調整鍍液的溶存氧濃度。Adjust the dissolved oxygen concentration of the plating solution.

第1貫施形態相同。 &lt;其他的實施形態&gt; 25 201109478 再者,本發明並非限定於上述實施形態,在不脫離其 趣旨之範圍可有各種變更改良等。 例如’於上述各實施形態’舉對被鑛物進行鑛銅之情 形為例做說明,本發明在電鍍銅之外,亦可使用於例如電 鍍鎳,電鑛金等其他的電鍍。 此外’於上述實施形態,舉他槽1 5以隔壁分成兩個或 者二個空間情形為例做說明,惟他槽丨5亦可分成四個以上 的空間* 此外,亦可將如第4實施形態之再供給配管,設於其 他的實施形態之電鐘裝置。 使用上述各實施形態之電鍍裝置及使用此之電鍍方 法,適於在被鑛物’例如印刷電路板、晶圓等形成配線圖 案等之用途,惟並非限定於該等用途者。 整理以上的實施形態,如下。 上述實把形態之電鍍裝置,包括:儲留鍍液之鍍敷槽; :。玄鍍敷槽為別體之槽而上述鍍液於與上述鍍敷槽之間循 衣之他槽。上述他槽’具有於其内部具有:第1空間;及 位於較該第!空間為下游側之第2空間上述第1空間内 之上述錄液之中,超過既古 ^ 屹過既疋间度的部分由上述第1空間流 入上述第2空間,上述鍵液於兮笸9处叫、亡个如产 、 &lt;殿欣於这第2空間流下空氣中的構 介以該構成,由於鍍液之中超過既定高度的部分會由第 1工間机入第2空間’而既定高度以下的部分會停留在第1 空間内,故可使停留在該第1空間之鍍液中的金屬粒子沉 26 201109478 降於第1 $間的下方。只要如此地使金屬粒子沉降於第丄 空間的下方集中1可藉由實施回收手段^期地將該等金 屬粒子回1文,可有效地將鍍液中的金屬粒子去除。藉此在 電鍍裝置,可減少過濾器的交換頻率’依情形,可省略過 滤器。 此外’使第1空間内之鍵液之中超過上述既定高度的 部分流入第2空間,在於該第2空間流下空氣t,即藉由 使流動狀態㈣液暴露於空氣而可調整鑛液的溶存氧濃 度0 如以上,根據該㈣,可調整鑛液的溶存氧漢度的同 時,可減少起因於過濾器之交換之成本。 具體而吕,作為上述他槽的上述構造,可舉例如,具 有隔開上述第i空間與上述第2空間而在上下方向延設: 隔壁,上述第i空間之上述鑛液溢出在於上述隔壁位於上 述既定高度之位置之上緣部而流入上述第2空間之構造。 於上述電鑛裝置,上述隔壁的上述上緣部,具有向上 述第2空間側延設之突出片,上述突出片具有由上述隔壁 的側面離隔之先端為佳。 、,於該構成’由第1空間流入第2空間的鍍液,沿著上 述大丨導至m由其先端之前端離開突出片放出 至空氣中。即’未在上緣部設置上述突出片時,由第^空 間抓入第2空間的鍍液’容易接觸隔壁的側面而沿著該侧 ,流下,惟在於本構成,可抑制鑛液沿著隔壁的側面流下。 猎此’由於可增加鑛液流下時與空氣之接觸面積,故可更 27 201109478 有效地進行調_液的溶存氧濃度。 下 此外,在於上述電鍍裝置,上述突出片,以 述第2工間邊向橫方向延伸的橫部及由該橫部的先端 的縱部’該縱部的先端與上述隔壁的側面離隔:構 於該構成,由第i空間流入第2空間的錢液藉由、 者上述橫部引導至其先端部,由隔壁的側面之距離變大: :矣々者上述縱部向下方向流下,故可進一步抑 著隔壁的側面流下。 收/a 此外,於上述電鑛裝置,上述他槽對,亦可為例如, 上述第1空間的上述鍍液通過位於上述隔壁之上述既定高 度之貫通口流入上述第2空間之構造。 此外,上述電鍍裝置,進-步具有將上述錢液由上述 鑛敷槽輸运至上述他槽之輸送之輸送側配管,該輸送側配 管於上述帛i空間具有供給上述鍍液之供給口,該供給口 位於較上述既定高度為下方為佳。 以此構成,由於上述輸送側配管的供給口在較上述既 定高度為下方’即位於較儲留於帛1空間之鏟液之液面為 下方,故由供給口對第i空間供給鑛液時可直接供給於儲 留於第i空間之鑛液的液中。如此地,直接對第i空間的 鍍液中供給鍍液之情形,與由供給口一 旦吐出於空氣中之 鑛液落入儲留於第1空間之鑛液液面之情形相比,可減低 對第1空間之鐘液之衝擊。藉此,可抑制健留於第i空間 之鍍液流動,可在第1空間使金屬粒子 τ灵有效地沉降。 28 201109478 此外,由上述供給口之上述鍍液之吐出方向朝向上述 他槽之内側面之情形,例如與上述突出方向朝下方之情形 相比,可抑制儲留於第丨空間之鍍液之流動,特別是位於 下方側的鐘液之流動。藉此,由於可抑制在於第i空間沉 降的金屬粒子被再度捲起,故可抑制金屬粒子在於第丨空 間的沉降被妨礙。 此外’上述電鐵裝置,亦可為進一步具有由上述鍵敷 槽對上述他槽輸送上述鍍液之輸送側配管,上述隔壁係第 1隔壁’上述他槽’具有第2隔壁,其係將上述第1空間 的内π刀成使上述鍍液中的金屬粒子沉降的沉降空間, 及位於較該,儿降空間為上游側,由上述輸送側配管之供給 口供給上述鍍液之供給空間,而上下方向延設之構成。 'W ,rrv工扣〇々叹&quot;U「牛-王间汉供 給空間5由於董十供·私 (Λ? p q丄、., 八’’Ό二間由輸送側配管之供給口供給鑛 液’故即使在供給链液昧性防认认&amp; Ββ 艰农吟储留於供給空間的鍍液流動,該 流動不易傳至沉降空P, m 平工間因此,與未於第1空間設置第2 隔壁之情形相比’可使金屬粒子更有效地沉降。 此外上述第2隔壁’設於較上述既定高度為下方而 具有連通上述沉降空間鱼 千工间興上述供給空間之複數連通口時, 供給於供給空間之縫游.s。 液通過第2隔壁的複數的連通口分散 移至沉降空間。如此±士餘丄&amp; 藉由使鑛液通過複數的連通口而分 散流入沉降空間,可虹座,^ 了抑制儲留於沉降空間之鍍液流動。 此外,上述第2卩3 β电 阳·!之上緣部位於上述既定高度或較 上述既定高度為下方時, 卞第2隔壁上之上緣部的高度呈與 29 201109478 儲留於沉降空間之鍍液之液面相同或其以下。因此,由於 沉降空間的鍍液之液面與供給空間的鍵液之液面呈大致相 同的高度’故由供給空間流入沉降空間的鍍液可緩和流入 時之衝擊。由於可抑制在於沉降空間的金屬粒子被再度捲 起’故可抑制金屬粒子在於沉降空間的沉降被妨礙。 此外’上述電鍍裝置,包括:由上述他槽對上述鐘敷 槽回送上述鍍液之回送侧配管,及將上述他槽所排出之上 述鍍液送回上述第丨空間之再供給配管時,在將在於他槽 之鍍液之一部分送回鍍敷槽之前,可通過再供給配管再度 供給第1空間。藉此,τ更加有效地分離鍍液中的異物。 此外,進-步包括設於較上述第!空間為下游側的空 間之機械式授拌機時,於第i ^間使金屬粒子沉降之後, 在更下游側的空間藉由上述機械錢拌機授拌鑛液。藉 此,可進行鍍液的溶存氧濃度的微調整。 〜八W .〜印丄%艰狀之精 :.=溢㈣,其係與該槽本體—體設置,上述槽本靡 述鍍液溢出上述槽本體賴壁之上緣“流人, 槽於内部具有上游側♦ 〇Λ ^ 之下…, 1二間及位於較該上游側空間為下游 之下游側空間,上述鍍 側空間於““ 迷上游側空間流入上述下 二间於二中流下之構造。 π稱成,不僅是他槽,在於鍍敷槽 行鍍液溶存氧θ溢出槽亦1 巩辰度的调整。於該溢出 側空間片λ L i 戮戒由上述 氧濃度。 二孔中机下時之間調整^ 30 201109478 此外,上述槽本體的上述上緣部,具有向上述溢出槽 側延設之突出片,上述突出片,具有與上述槽本體的側= 離隔之先端時,由槽本體流入溢出槽之鍍液,沿著上述突 出片引導至其先端部,由該先端部之前端離開突出片放出 至空氣中。因此,於本構成,可能抑制鍍液沿著槽本體的 側面流下。藉此,由於可增加鍍液流下時與空氣的接觸面 積’故可更有效地進行鍍液溶存氧濃度之調整。 在於上述第2空間,上述鍍液流下空氣中的落差以 以上為佳。如此地藉由使上述落差為l〇cm以上,可 更加有效地進行在他槽之鍍液之溶存氧濃度之調整。 上述實施形態之電鍍方法,係使用包括:儲留鍍液之 鍍敷槽;與該鍍敷槽為別體之槽而與上述鍍敷槽之間使上 述鍍液循環之他槽之電鑛裝置。上述他槽,於其内部具有 第1空間及位於較該第!空間為下游側之第2空間。於該 方法,於上述第1空間將上述鍍液儲留至既定高度,使上 述鍍液中的金屬粒子沉降於上述第i $間之下方。再者於 :方法’使上述第1空間内的上述鍍液之中超過上述既定 :度的邛分流入上述第2空間,冑由於該第2空間流下空 虱中調整上述鍍液之溶存氧濃度。藉此,可調整鍍液之溶 存氧濃度的同時,可有效地去除鍍液中的金屬粒子。 上述實施形態之電鑛裝置及電鍍方法,係上述鐘液為The first embodiment is the same. &lt;Other Embodiments&gt; 25 201109478 The present invention is not limited to the above-described embodiments, and various modifications and improvements can be made without departing from the scope of the invention. For example, in the above embodiments, the case where the mineral is subjected to mineral ore is described as an example. The present invention may be applied to other electroplating such as electroless nickel or electric gold in addition to electroplating copper. In addition, in the above embodiment, the case where the other side of the tank 15 is divided into two or two spaces by the partition wall will be described as an example, but the tank 5 may be divided into four or more spaces. The form resupply pipe is provided in an electric clock device of another embodiment. The plating apparatus according to each of the above embodiments and the plating method using the same are suitable for use in forming a wiring pattern or the like on a mineral such as a printed circuit board or a wafer, but are not limited to such applications. The above embodiments are organized as follows. The electroplating device of the above-mentioned actual form includes: a plating tank for storing the plating solution; The black plated groove is a groove of the body and the plating solution is grooved between the plating tank and the plating tank. The above-mentioned tank ' has a first space in its interior; and is located at the same time! The space in which the space is the second space on the downstream side is the portion of the liquid recording in the first space, and the portion exceeding the intermediate level flows into the second space from the first space, and the key liquid is in the 兮笸9 The screaming, dying, and the production of the air in the space of the second space, the composition of the plating liquid exceeding the predetermined height will be entered into the second space by the first work space. The portion below the predetermined height stays in the first space, so that the metal particle sink 26 201109478 staying in the plating solution in the first space can be lowered below the first $. As long as the metal particles are deposited in the lower concentration 1 of the second space, the metal particles in the plating solution can be effectively removed by performing the recovery means to return the metal particles. Thereby, in the plating apparatus, the frequency of exchange of the filter can be reduced. Depending on the case, the filter can be omitted. Further, 'the portion of the key liquid in the first space that exceeds the predetermined height flows into the second space, and the air t in the second space flows, that is, the liquid state (4) is exposed to the air to adjust the dissolution of the ore solution. The oxygen concentration is 0 or more. According to the above (4), the dissolved oxygen of the ore solution can be adjusted, and the cost due to the exchange of the filter can be reduced. Specifically, as the above-described structure of the above-described groove, for example, the first i-space and the second space are spaced apart from each other in the vertical direction: a partition wall, and the ore liquid in the i-th space overflows in the partition wall The structure in which the edge of the predetermined height is above the edge and flows into the second space. In the above-described electric ore device, the upper edge portion of the partition wall has a protruding piece extending toward the second space side, and the protruding piece preferably has a tip end separated from a side surface of the partition wall. In this configuration, the plating solution that has flowed into the second space from the first space is guided to the air from the front end of the apex. In other words, when the protruding piece is not provided at the upper edge portion, the plating liquid "catched into the second space by the second space easily contacts the side surface of the partition wall and flows down along the side, but this configuration suppresses the mineral liquid along the side. The side of the next wall flows down. Since this can increase the contact area with the air when the ore liquid flows down, it is possible to effectively carry out the dissolved oxygen concentration of the liquid. Further, in the above-described plating apparatus, the protruding piece has a lateral portion extending in the lateral direction with respect to the second intermediate side and a longitudinal portion of the leading end of the lateral portion. The leading end of the vertical portion is separated from the side surface of the partition wall. With this configuration, the money flowing into the second space from the i-th space is guided to the tip end portion by the lateral portion, and the distance from the side surface of the partition wall is increased: : The vertical portion of the partition portion flows downward, so that the vertical portion flows downward. It can further inhibit the side of the partition wall from flowing down. In addition, in the above-described electric ore device, the above-described tank pair may have a structure in which the plating solution in the first space flows into the second space through a through port located at the predetermined height of the partition wall. Further, the plating apparatus further includes a transport-side pipe for transporting the money liquid from the mineral deposit tank to the tank, and the transport-side pipe has a supply port for supplying the plating solution in the 帛i space. Preferably, the supply port is located below the predetermined height. According to this configuration, when the supply port of the transport-side pipe is located below the predetermined height, that is, below the liquid level of the scooping liquid stored in the space of the crucible 1, the supply port is supplied with the mineral liquid in the i-th space. It can be directly supplied to the liquid stored in the ore liquid in the i-th space. In this way, the case where the plating solution is directly supplied to the plating solution in the i-th space can be reduced as compared with the case where the mineral liquid which is discharged into the air from the supply port falls into the liquid level of the mineral liquid stored in the first space. The impact on the bell of the first space. Thereby, the flow of the plating solution retained in the i-th space can be suppressed, and the metal particles τ can be effectively settled in the first space. In addition, in the case where the discharge direction of the plating solution of the supply port is directed toward the inner side surface of the other groove, for example, the flow of the plating liquid stored in the second space can be suppressed as compared with the case where the protruding direction is downward. Especially the flow of the bell liquid on the lower side. Thereby, since the metal particles whose precipitation in the i-th space is suppressed can be suppressed from being rolled up again, it is possible to suppress the sedimentation of the metal particles in the first space. Further, the electric iron device may further include a transport side pipe that transports the plating solution to the other tank by the key groove, and the partition wall first partition wall 'the other groove' has a second partition wall The inner π-knife of the first space is a settling space for causing the metal particles in the plating solution to settle, and the supply space for supplying the plating solution is supplied from the supply port of the transport-side pipe to the upstream side. The structure is extended in the up and down direction. 'W, rrv work buckle sighs &quot; U "bull - the king of the Han supply space 5 due to Dong Shi supply · private (Λ? pq丄,., eight ''Ό two supply by the supply side of the supply side of the mine Therefore, even if the liquid in the supply chain is deflated and the 镀β 艰 吟 吟 吟 吟 吟 吟 吟 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In the case where the second partition wall is provided, it is possible to make the metal particles more effectively settle. Further, the second partition wall is provided below the predetermined height, and has a plurality of communication ports that communicate with the above-mentioned supply space. At the time, the liquid is supplied to the supply space. The liquid is dispersed and moved to the settling space through the plurality of communication ports of the second partition wall. Thus, ± 丄 丄 &amp; is dispersed into the settlement space by passing the ore through a plurality of communication ports It is possible to suppress the flow of the plating solution stored in the sedimentation space. Further, when the upper edge portion of the second 卩3 电 阳 阳! is located at the predetermined height or below the predetermined height, 卞 second The height of the upper edge of the next wall is presented with 29 201109478 The liquid level of the plating solution remaining in the settling space is the same or less. Therefore, since the liquid level of the plating solution in the settling space is substantially the same height as the liquid level of the key liquid in the supply space, the plating space flows into the settling space from the supply space. The liquid can alleviate the impact during the inflow. Since the metal particles in the settling space can be suppressed from being rolled up again, it is possible to suppress the sedimentation of the metal particles in the sedimentation space from being hindered. Further, the above plating apparatus includes: The groove feed back the return-side pipe of the plating solution, and when the plating solution discharged from the other tank is returned to the re-supply pipe of the second space, before a part of the plating solution in the groove is returned to the plating tank The first space can be re-supplied by the re-supply pipe. The τ can more effectively separate the foreign matter in the plating solution. Further, the step further includes a mechanical mixer that is disposed on the downstream side of the first space. When the metal particles are sedimented between the first and second sides, the ore liquid is supplied to the space on the downstream side by the above-mentioned mechanical money mixing machine, whereby the dissolved oxygen concentration of the plating solution can be made slightly. The whole of the ~ W W : 艰 艰 艰 艰 : : : 艰 艰 艰 艰 艰 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The tank has an upstream side ♦ 〇Λ ^ under the inside, 1 and 2 and a downstream side space which is downstream of the upstream side space, and the plating side space flows into the lower second space in the second upstream space. The structure of the flow down. The π is called, not only the groove, but also the adjustment of the concentration of the oxygen θ overflow groove in the plating bath. The space λ L i 戮 由 由 上述 上述 上述 上述 二 二Adjustment between the time of the machine ^ 30 201109478 Further, the upper edge portion of the groove body has a protruding piece extending toward the overflow groove side, and the protruding piece has a front end of the groove body and a front end of the groove body The plating liquid flowing into the overflow tank of the groove body is guided to the tip end portion along the protruding piece, and is discharged from the protruding piece to the air by the front end of the tip end portion. Therefore, with this configuration, it is possible to suppress the plating solution from flowing down along the side surface of the groove body. Thereby, since the contact area with the air at the time of flowing the plating solution can be increased, the adjustment of the dissolved oxygen concentration in the plating solution can be performed more effectively. In the second space, the drop in the air flowing through the plating solution is preferably the above. By adjusting the above-described drop to 10 〇 cm or more, the concentration of dissolved oxygen in the plating solution in the other bath can be more effectively performed. In the plating method of the above embodiment, a plating bath including a plating bath is used, and an electroplating apparatus for circulating the plating solution between the plating tank and the plating tank is used. . The above-mentioned slot has a first space inside and is located at the same time! The space is the second space on the downstream side. In this method, the plating solution is stored in the first space to a predetermined height, and the metal particles in the plating solution are deposited below the ith $. Further, in the method of the present invention, the enthalpy exceeding the predetermined degree of the plating solution in the first space flows into the second space, and the dissolved oxygen concentration of the plating solution is adjusted in the second space. . Thereby, the concentration of dissolved oxygen in the plating solution can be adjusted, and the metal particles in the plating solution can be effectively removed. The electric ore device and the electroplating method according to the above embodiment are

使用於鍍銅者,而包含作A 匕各作為先壳劑特別適合使用含硫有 化合物之情形。 以下,舉實施例更加具體地說明本發明,惟本發明並 31 201109478 非限定於以下實施例者。 〈實施例1&gt; 使用電鍍裝置,以下.+, 行電鐘銅。於試料件對被鍵物(試料版卜8)進 使用圖12所示之電鐘萝置11。 於該電鍍裝置11,鍍敷榉電鍍裝置Η 辑〗…心触 與圖1所示構造相同,他 槽15係他槽本體20内以坌】 ^ 以第1隔壁21及第3隔壁91分成 第1工間17、第2空間19及 弟d工間9 3的三個空間之構 造。鍍液,溢出第1隔辟9 隔壁21之上緣部,由第1空間17流 入第2空間19,溢出第q@ n, a弟3隔壁91之上緣部,由第2空間 1 9流入第3空間9 3。於笛9 *Λ? p日1 rv π第2空間19配設有下溢用隔板45。 此外,於試料No 1 ς Q .. m , .,5 8’使用由圖12所示電鍍裝置 11之他槽15取下隔壁21、91者。 第1隔壁21及第3隔壁91之上緣部之構造,係如後 述之表2所示,„式料N〇.4為構造a(示於圖2D之構造), 。式料No· 2、3為構造b(示於圖2E之構造)。 第1隔壁21及第3隔壁91之上緣部至鐘液的液面的 落差,如後所述之表2所示之5cm、l〇cm、20cm的三個條 件。 被鑛物(陰極),使用不鏽鋼板,及具有導通孔之基板 (具有盲導通孔之印刷電路板)。使基板之導通孔的開口徑 為100;/ m,導通孔的深度為75&quot; m。 其他的電鍍銅條件等如下。 鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合 計):4300公升 32 201109478 他槽15之浴量(於第1空間π、第2空間19及第3 空間93之浴量之合計)_· 8〇〇公升 浴量:51 0 0公升 鍍液:硫酸銅鑛液(包含硫酸銅五水和物200g/L、硫 酸5 0g/L '及氣化物離子5〇mg/L) 添加於鍍液之添加劑:上村工業社製「THRU-CUP EVF-Tj 鑛液的循環速度:860公升/分 陽極:可溶性陽極(於鈦盒裝含磷銅球,將此裝於聚丙 稀製之陽極袋者) 以上述條件對被鍍物進行電鍍銅,評估此時之溶存氧 /辰度、披膜物性、導通孔的凹陷量。彼膜物性(延伸率及抗 張力)之評估,係使用於被鍍物之上述不鏽鋼板施以5〇以m 的鍵銅者。於導通孔的凹陷量之評估,使用於被鍍物之上 述附有導通孔之電路板施以20 μπι之錄銅者。 於該貫施例1,對不鏽鋼板,以如下步驟1〜8之順序 施以前處理、電鍍銅處理、及後處理。 步驟1 :酸洗清潔劑(上村工業社製msc_3 a) 步驟2 :湯洗 步驟3 :水洗 步驟4 :酸洗 步驟5 :水洗 步驟6 ·電鑛銅 步驟7 :水洗 201109478 步驟8 :乾燥 此外’對於附有導通孔之基板,則進行習知之去膠、杳 處理及化學鍍銅(〇. 3 μ m)處理之後,以與上述相同的步驟 1〜8之順序施以前處理、電鍍銅處理、及後處理。 此外,在於實施例1之電鍍銅之條件如表1。電錢銅 之處理溫度(鍍液的溫度)為25°C。再者,表1中的陰極電 流密度的單位為A/dm2。 [表1] 不鑛鋼板 附有導通孔之基板 陰極電流密度(ASD) 1.0 1.0 鍍敷時間(分) 226 90~ 膜厚(//m) 50 20~ 將結果示於表2。此外,於表3記載各試料之試驗程 序。此外’於表4表示試料No. 1之鍍敷處理結束後,作為 他槽安裝圖12所示之隔壁2卜91,電解30分鐘、60分鐘、 9 0分鐘時之溶存氧濃度。此外,使各喷嘴6丄對被鍍物(陰 極5 7)之鑛液流量大致一定地,使通過回送側配管41對槽 本體47供給之鍍液之一部分通過配管端部4ic供給。溶存 氧濃度’係測定採自安裝於圖12之配管端部41 c附近之配 管之省略圖示之閥門之鍍液之溶存氧。 導通孔的凹陷量,係對圖丨5A所示之附有導通孔之基 板101,施以圖15B所示之鍍銅1〇3後,藉由測定形成於 導通孔101c内之鍍銅103之表面中最低的部分,及形成於 導通孔101c之周緣部之鑛鋼1〇3之表面之高度(厚度方向 之尺寸)之差距Ah求得(圖15B)。再者,圖15八之附有導 34 201109478 通孔之基101,包括樹脂層101a及形成於該樹脂層i〇ia 表面之銅層101b,對此形成導通孔i〇lc者。 此外,延伸率及抗張力,係使用圖16所示之試驗片如 下測定。即’首先’對不鏽鋼板施以5〇“±5 “之鍍銅, 接著’避免有皺紋或傷痕地仔細地由不鏽鋼板剝下鍛銅層 (銅馆)。將該銅箱以120t熱處理2小時後,以沖模製作 圖16所示形狀的試驗片。將該試驗片之中央部之膜厚2螢 光X射線膜厚計測定,將該測定值作為試驗片之膜厚 d(nm)。接著,使拉張試驗機之夾頭之間的距離為4〇_, 使試驗片之内圓部分由夾頭露出,將試驗片以爽頭固定, 以拉張速度W分進行試驗。其次’由試驗所得圖表讀取 2拉:應力F(kgf)’將該值以F(kgf)以試驗片的剖面積 剖I::表,6、9所示之抗張力(kg&quot;&quot;10。試驗片的 係以5式驗片的中央部的寬度1〇mm與膜 積。延伸率,总 、dmm之 ()係測S將試驗片開始拉伸至試驗片破斯 所伸長之尺+ΛΤγ、 月破·斷 Μ&quot;0,將該△以随)以拉伸錢之試驗片之 中央4之直線部分之尺寸(2〇mm)商除而算出。 35 201109478 [表2] 試料No. 他槽之規格 循環量 溶存氧濃度 mg/公升 披膜物性 導通孔 凹陷量 β\Ά 隔壁 落差 延伸率 % 抗張力 kgf/mm2 1 無 — 10轉 2.4 25.6 35.6 28.5 2 有⑻ 5cm 10轉 3.7 31.2 32.4 19.2 3 有(B) 20cm 10轉 7.7 32 33.1 15.2 4 有(A) 10cm 10轉 7.4 31.5 32.8 14.5 5 無 10轉 6 32 33 15.2 6 益 1 »»&gt; 10轉 4.3 30.7 32.2 16.3 7 益 #»*、 10轉 3.4 31.1 33.3 18.1 8 益 »«»\ 10轉 2.6 31 33.3 24.4 [表3: 試料 No. 1 使用無隔壁(隔板)之他槽,以陰極電流密度1. 〇ASD電解3〇小時。 之後’對不鑪鋼板、及附有導通孔之基板進行錄數。 2 使用圖14所示之他槽,以1. 0ASD電解24小時。 鏽鋼板、及附有導通孔之基板進行链數。 3 使用圖14所示之他槽,以1. 0ASD電解24小時。 鏽鋼板、及附有導通孔之基板進行链數。 4 使,用圖14所示之他槽,以1. 0ASD電解24小時。 予鏽鋼板、及附有導通孔之基板進行鐘数。 5 接,试料Ν〇· 4 ’使用無隔壁(隔板)之他槽,將鑛液循環電解8小時。 鏽鋼板、及附有導通孔之基板進行鏟数。 6 咸,Ν〇· 5連續’使用無隔壁(隔板)之他槽,將鑛液循環電解8小時。 5^-’ 鏽鋼板、及附有導通孔之基板進行鍵敷。 7 决,No· 6連續’使用無隔壁(隔板)之他槽,將鍵液循環電解8小時。 鏽鋼板、及附有導通孔之基板進行鍍敷。 8 试,Μ〇· 7連續’使用無隔壁(隔板)之他槽,將鑛液循環電解8小時。 鏽鋼板、及附有導通孔之基板進行鍍敷。 溶存氧濃度 (mg/公升) ^9 7^6 電解時 (分) 30^ 90~^ 36 201109478 由表2之試料No. 1的結果,可知使用沒有設置隔壁 21、91之他槽時,鍍液的溶存氧濃度低’有增大導通孔凹 陷量之趨勢。 由試料No. 2〜4的結果,可知藉由於他槽15設置隔壁 21、91使鑛液溢出可提咼溶存氧濃度。此外,如試料N〇, 3、 4藉由使溢出時鍍液的落差為1〇cm以上,可顯著地提高溶 存氧濃度°於該等試料No. 3、4,即使長時間電解,溶存 氧濃度並沒有減少。 由試料No. 4之鍍敷處理之後,接續進行之試料ν〇·5〜8 之結果’可知由他槽15取下隔壁21、91,則隨著電解時 間變長溶存氧濃度下降,而有增大導通孔凹陷量的趨勢。 此外,如表4所示,於試料Νο.丨之鍍敷處理之後,於 他槽安裝隔壁21、91電解,則隨著時間經過可提高溶存氧 濃度。 〈實施例2 &gt; 使用如圖13Α及圖13Β所示之電鍍裝置,以下述條件 對被鍍物(試料No. 9〜14)進行電鍍銅。於試料Ν〇. 12〜14, 作為他槽15使用具有與圖12之的裝置相同的隔壁21、9ι 之他槽。此外,鍍敷槽13,係如圖13Α及圖13β所示包 括槽本體47,及溢出槽49,由槽本體4?溢出之鍍液流入 溢出槽49之構造。於槽本體47内,將陰極57的板狀被鍍 物以略水平配置,於該陰極57上下分別排列複數陽極55。 此外,於陰極57上下,分別配設噴嘴61。各噴嘴61,設 有將通過回送側配管41由他槽15輸送之鑛液朝向陰極57 37 201109478 側噴出之複數喷出口(無圖示)。 此外,於”式料Νο·9〜11’係使用由他槽a取下隔壁21、 91者。 由第1隔壁21及第3隔壁91之上緣部至鍍液液面之 落差’係如後述之表6所示之5cm' 1〇cm、—之三個條 件。 作為被鍍物(陰極),使用不鏽鋼板及附有通孔之基 板。在於該基板之通孔的内徑為〇3龍,基板的板厚為 1.6mm 〇 其他的電鍍銅之條件如下。 鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合 計):1 000公升 他槽15之浴量(於第丨空間17、第2空間19及第3 空間9 3之浴量之合計):14 〇 〇公升 浴量:2400公升 鑛液:硫酸銅鍍液(包含硫酸銅五水和物l〇〇g/L、硫 酸· 200g/L、及氣化物離子5〇mg/L) 添加於鑛液之添加劑:上村工業社製「THRU_CUp ETN」 鍍液之循環速度:3000公升/分 陽極:不溶性陽極(於Ti-Pt塗敷氧化銥) 於該實施例2,對不鏽鋼板’以與實施例1同樣的步 驟1〜8之順序施以前處理、電鍍銅處理及後處理。 此外,對於附有通孔之基板,係以與實施例1同樣地 進行習知之去膠渣處理及化學鍍銅(〇. 3 # m)處理之後,以 38 201109478 與實施例1同樣的步驟1〜8之順序祐丨、7 &amp;占 施u刖處理、電鍍銅處 理及後處理。 此外’於實施例2之電鍍銅條件 丨术仟如表5所示。電鍍銅 處理溫度(鍍液的溫度)為25°C 〇 *去 * —a 〇 考’表5中的陰極電流 密度之卓位係A/dm2。 [表5] 不鏽鋼板 陰極電流密度(ASD) 5.0 _ 鍍敷時間(分) 45 ' 膜厚(Am) 50 _ 、曲以上述條件對被鍍物進行電鑛銅,評估此時之溶存氧 濃度、披膜物性、通孔的均一性(ΤΗ_τρ)。將結果示於表6。 此外,於表7記載各試料之試驗㈣。溶存氧濃度,係測 疋採自安裝於圖13之過渡氣65之下游側之回送側配管η 之省略圖示之閥門之鍍液之溶存氧。 均-性,其定義係鍍在通孔的深度方向之中央之鑛銅 厚度對通孔附近之基板表面之鍍銅厚度之比。#,均一性 (ΤΗ-ΤΡ)’係如圖17所示,對形成友通孔i〇5a之基板ι〇5 以上迤條件施以鑛銅m之後,分別測定鍵在通孔之深度 方向之中央部之鑛銅厚度e、f,及通孔附近的基板表面之 鍍銅面之厚度a〜d ’藉由將各值代入下式⑸而求得。 TH-TP(%)=2(e+f)/(a+b+c+d)xi〇〇 (5) 39 201109478 [表6] 试料No. 他槽之規格 循環量 溶存氧濃度 mg/公升 披膜物性 ΤΗ TP % 隔壁 落差 上升率 °/〇 反抗張力 kgf/mm2 9 無 - 75轉 7.4 30.4 33.6 75.7 10 益 — 75轉 23.4 23.5 37.8 70.7 11 無 — 75轉 38.5 15.4 43.4 65.6 12 有⑻ 5 cm 75轉 21.5 24.5 37.5 72.5 13 有⑻ 20cm 75轉 15.6 30.3 31.2 76.2 14 有(A) 10cm 75轉 18.5 30.1 32.2 75.6 [表7] 試料No. 9 使用無隔壁(隔板)之他槽邊循環鍍液 對不鏽鋼板以及電路板進行鍍敷。 10 接續試料No. 9,電解3小時。 之後,對不鏽鋼板以及電路板進行鍍敷。 11 接續試料No. 10,電解3小時。 之後,對不鏽鋼板以及電路板進行鍍敷。 12 使用具有隔壁之他槽,以陰極電流密度5. 0ASD電解24小時。 之後,對不鏽鋼板以及電路板進行鍍敷。 13 使用具有隔壁之他槽,以5. 0ASD電解24小時。 之後,對不鏽鋼板以及電路板進行鍍敷。 14 使用具有隔壁之他槽,以5. 0ASD電解24小時。 之後,對不鏽鋼板以及電路板進行鍍敷。 由表6之試料No. 9之結果,於開始鍍敷時之溶存氧濃 度為7. 4mg /公升,故披膜物性良好。但是,由試料No. 1 0、 11之結果,可知隨著電解時間變長溶存氧濃度增加,3小 時後的試料No. 1 0之彼膜物性變差,而TH-TP變的相當低, 6小時後的試料No. 11,則披膜物性變得更差,TH-TP降低 至 65. 6% 。 另一方面,試料No. 12〜14,藉由在他槽15設置隔壁 21、91使鍍液溢出而可抑制溶存氧濃度的上升。特別是, 40 201109478 1 Ocm以上, 於該等試料 以下,而披 藉由如試料Νο·ΐ3、14使鍍液溢出時的落差為 可顯著地提高抑制溶存氧濃度上升的效果。 No. 13、14 ’可使溶存氧濃度降低至2〇mg/公升 膜物性亦良好’ ΤΗ-TP亦成75%以上。 〈實施例3 &gt; 使用如圖14所示之電鍍裝置以下述條件對被鍍物(試 料No. 15〜18)進行電鍍銅。於試料N〇17、18,作為他槽 15使用具有與圖12之裝置同樣的隔壁21、9ι之他槽。^ 外,鍍敷槽13,係如圖14所示,包括槽本體47,及溢出 槽49,由槽本體47溢出之鍍液流入溢出槽49之構造。 槽本體47内,以隔膜99分成兩個空間。作為該腸膜 99,使用 Yuasa Membrane System 公司製「Y-9205T 。格 邊的空間配置陰極5 7之被鑛物’於另一邊的空間配置陽 極55。陰極57附近配設有喷嘴61 ^喷嘴61,設有將通過 回送側配管41由他槽1 5輸送之鍍液朝向陰極57側喷出之 喷出口(無圖示)。 此外’试料No. 15、16,使用由他槽15取下隔壁21、 91者。 由第1隔壁21及第3隔壁91的上緣部到鍍液液面的 落差’係如後述之表9所示之1 〇cm、2 〇cin之兩個條件。 作為被鍍物(陰極),使用具有不鏽鋼板、及盲導通孔 之晶圓。在該基板之導通孔的開口徑為丨5 μ m,導通孔的 深度為2 5 // m。 其他的電鑛銅的條件如下。 41 201109478 鍍敷槽13之浴量(槽本體47與溢出槽49之浴量之合 計):5 0公升 他槽15之浴量(於第丄空間17、第2空間19及第3 空間93之浴量之合計):1 50公升 浴量:2 0 0公升 鍵液.硫酸銅鑛液(包含硫酸銅五水和物2 Q Q g / L、硫 酸50g/L、及氣化物離子50mg/L) 添加於經液之添加劑:上村工業社製「thru-cup ESA-21」 鍍液的循環速度:100公升/分 陽極:可溶性陽極(於鈦盒裝含磷銅球者) 於該實施例3 ’對不鏽鋼板’以與實施例1同樣的步 驟1~8的順序施以前處理、電鍍銅處理及後處理。 此外,對晶圓,以習知之方法施以阻障層、種晶層之 後’以與實施例1同樣的步驟卜8的順序施以前處理、電 鍍銅處理及後處理。 此外’於實施例3的電鍍銅之條件如表8所示。電鍍 鋼處理之溫度(鍍液的溫度)為25°C。此外,表8中之陰極 電流密度之單位為A/dm2。It is used in copper plating, and it is particularly suitable to use a sulfur-containing compound as a pre-shell agent. Hereinafter, the present invention will be described more specifically by way of examples, but the present invention is not limited to the following examples. <Example 1> Using a plating apparatus, the following .+, electric clock copper. The test piece is placed on the object to be pressed (sample material 8). In the plating apparatus 11, the plating plating apparatus is the same as the structure shown in Fig. 1. The groove 15 is in the groove body 20, and the first partition 21 and the third partition 91 are divided into the first partition 21 and the third partition 91. The structure of the three spaces of the 1st work room 17, the second space 19, and the younger work room 9 3 . The plating solution overflows the first partition 9 and the upper edge of the partition 21 flows into the second space 19 from the first space 17, overflowing the upper edge of the q@n, a brother 3 partition 91, and flows in from the second space 19 The third space 9 3. In the whistle 9 * Λ ? p 1 1 rv π second space 19 is provided with an underflow partition 45. Further, in the samples No 1 ς Q .. m , . , 5 8 ', the partition walls 21 and 91 were removed from the other grooves 15 of the plating apparatus 11 shown in Fig. 12 . The structure of the upper edge portion of the first partition wall 21 and the third partition wall 91 is as shown in Table 2, which will be described later, and the material N〇.4 is the structure a (the structure shown in Fig. 2D). 3 is a structure b (the structure shown in Fig. 2E). The difference between the upper edge of the first partition wall 21 and the third partition wall 91 to the liquid surface of the bell liquid is 5 cm, which is shown in Table 2, which will be described later. Three conditions of cm and 20 cm. The mineral (cathode), the stainless steel plate, and the substrate with the via hole (the printed circuit board with the blind via). The opening diameter of the via hole of the substrate is 100; / m, conduction The depth of the hole is 75 &quot; m. Other copper plating conditions are as follows. The bath amount of the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 4300 liters 32 201109478 The bath volume of the tank 15 (in The total amount of baths of the first space π, the second space 19, and the third space 93) _· 8 〇〇 liter bath amount: 51 0 0 liter plating bath: copper sulfate ore (containing copper sulfate pentahydrate and 200 g/ L, sulfuric acid 50 g/L 'and vaporization ion 5 〇mg/L) Additive added to the plating solution: "The cycle speed of THRU-CUP EVF-Tj mineral liquid manufactured by Shangcun Industrial Co., Ltd.: 860 liter / liter Pole: Soluble anode (in a titanium box containing phosphor bronze balls, this is placed in a polypropylene anode bag). The plated material is electroplated with copper under the above conditions, and the dissolved oxygen/initiality and the film properties are evaluated. The amount of depression of the via hole. The evaluation of the physical properties (elongation and tensile strength) of the film is applied to the above-mentioned stainless steel plate of the object to be plated with a bond copper of 5 〇 m. The evaluation of the amount of depression of the via hole is used. Applying a copper plate of 20 μm to the above-mentioned circuit board with the via hole of the object to be plated. In the first embodiment, the stainless steel plate is subjected to the prior treatment, electroplating copper treatment, and the following steps 1 to 8. Post-treatment. Step 1: Acid-washing detergent (MSc_3 a, manufactured by Uemura Kogyo Co., Ltd.) Step 2: Soup washing Step 3: Water washing Step 4: Pickling Step 5: Water washing step 6 • Electro-mineral copper Step 7: Washing 201109478 Step 8: Drying, 'For the substrate with the via hole, after the conventional degumming, enamel treatment and electroless copper plating (〇. 3 μ m), the previous treatment and plating are carried out in the same order as the above steps 1 to 8. Copper treatment and post-treatment. The conditions for electroplating copper of 1 are shown in Table 1. The treatment temperature of the copper (the temperature of the plating solution) was 25 ° C. Furthermore, the unit of the cathode current density in Table 1 was A/dm 2 . [Table 1] Plate cathode current density (ASD) 1.0 1.0 plating time (minutes) 226 90~ film thickness (//m) 50 20~ The results are shown in Table 2. In addition, Table 3 shows the contents of each sample. In the test procedure, after the plating treatment of the sample No. 1 was completed, the partition wall 2 shown in Fig. 12 was attached as a tank, and the dissolved oxygen concentration was electrolyzed for 30 minutes, 60 minutes, and 90 minutes. In addition, a portion of the plating liquid supplied to the tank main body 47 through the return-side piping 41 is supplied through the piping end portion 4ic by making the flow rate of the ore of the respective nozzles 6 to the object to be plated (the cathodes 5 7) substantially constant. The dissolved oxygen concentration is measured by the dissolved oxygen of the plating solution of the valve which is omitted from the piping attached to the pipe end portion 41c of Fig. 12 . The amount of depression of the via hole is the substrate 101 with the via hole shown in FIG. 5A, and after the copper plating 1〇3 shown in FIG. 15B is applied, the copper plating 103 formed in the via hole 101c is measured. The difference between the lowest portion of the surface and the height (the dimension in the thickness direction) of the surface of the steel 1〇3 formed at the peripheral portion of the via hole 101c is obtained (Fig. 15B). Further, the base 101 of the through-hole 34 201109478 is provided with a resin layer 101a and a copper layer 101b formed on the surface of the resin layer i〇ia, and a via hole i〇lc is formed therewith. Further, the elongation and the tensile strength were measured as follows using the test piece shown in Fig. 16. That is, 'first' the stainless steel plate was subjected to 5 〇 "±5" of copper plating, and then the wrought copper layer (copper hall) was carefully peeled off from the stainless steel plate by avoiding wrinkles or scratches. After the copper box was heat-treated at 120 t for 2 hours, a test piece of the shape shown in Fig. 16 was produced by punching. The thickness of the central portion of the test piece was measured by a fluorescent X-ray film thickness meter, and the measured value was defined as the film thickness d (nm) of the test piece. Next, the distance between the chucks of the tensile tester was set to 4 〇 _, and the inner round portion of the test piece was exposed by the chuck, and the test piece was fixed with a cool head, and the test was performed at a tensile speed W. Next, 'read from the chart obtained by the test 2 pull: stress F (kgf)', the value is F (kgf) in the cross-sectional area of the test piece I:: Table, 6, 9 shows the tensile strength (kg&quot;&quot;10 The test piece is made up of a width of 1 〇mm and a film at the center of the 5th piece. The elongation, total, and dmm are measured by S. The test piece is stretched to the length of the test piece. ΛΤγ, 破破·断Μ·0, and this Δ was calculated by dividing the size (2 〇mm) of the straight portion of the center 4 of the test piece of the stretched money. 35 201109478 [Table 2] Sample No. The specification of the tank is the circulating amount of dissolved oxygen concentration mg / liter of the membrane physical permeability hole depression amount β \ Ά the partition wall elongation elongation % tensile strength kgf / mm2 1 - 10 turns 2.4 25.6 35.6 28.5 2 Yes (8) 5cm 10 turns 3.7 31.2 32.4 19.2 3 Yes (B) 20cm 10 turns 7.7 32 33.1 15.2 4 Yes (A) 10cm 10 turns 7.4 31.5 32.8 14.5 5 No 10 turns 6 32 33 15.2 6 Benefit 1 »»&gt; 10 turns 4.3 30.7 32.2 16.3 7 益#»*, 10 3.4 3.4 31.1 33.3 18.1 8 益»«»\10 2.6 31 33.3 24.4 [Table 3: Sample No. 1 Using a tank without partition (separator) to cathodic current Density 1. 〇ASD electrolysis for 3 hours. Then, the number of the steel sheets and the substrate with the via holes are recorded. 2 Electrolyze at 1.0 ASD for 24 hours using the tank shown in Fig. 14. The rust steel plate and the substrate with the via holes are subjected to chain number. 3 Electrolyze at 1.0 ASD for 24 hours using the tank shown in Fig. 14. The rust steel plate and the substrate with the via holes are subjected to chain number. 4, using the tank shown in Figure 14, electrolysis at 1.0 ASD for 24 hours. The number of clocks is given to the rust steel plate and the substrate with the via holes. 5, sample Ν〇· 4 ‘Use the tank without partition (separator) to circulate the ore liquid for 8 hours. The number of shovel is performed on the rust steel plate and the substrate with the through holes. 6 Salty, Ν〇·5 continuous 'Use the tank without partition (separator) to circulate the ore liquid for 8 hours. The 5^-' rust steel plate and the substrate with the via holes are bonded. 7 决, No. 6 continuous 'Using a tank without a partition (separator), the key liquid was electrolyzed for 8 hours. The rust steel plate and the substrate with the via holes are plated. 8 test, Μ〇·7 continuous 'Use the tank without partition (separator) to circulate the ore liquid for 8 hours. The rust steel plate and the substrate with the via holes are plated. Dissolved oxygen concentration (mg/liter) ^9 7^6 Electrolysis (minutes) 30^ 90~^ 36 201109478 From the results of sample No. 1 of Table 2, it can be seen that plating is performed using a groove in which the partition walls 21 and 91 are not provided. The low dissolved oxygen concentration of the liquid has a tendency to increase the amount of depression of the via hole. As a result of the samples No. 2 to 4, it is understood that the dissolved oxygen concentration can be extracted by overflowing the ore liquid by providing the partition walls 21 and 91 in the groove 15. Further, if the sample N〇, 3, and 4 have a drop of the plating solution of 1 〇cm or more at the time of overflow, the dissolved oxygen concentration can be remarkably increased. In the samples No. 3 and 4, even if electrolysis is performed for a long period of time, the dissolved oxygen is dissolved. The concentration did not decrease. After the plating treatment of the sample No. 4, the results of the samples ν〇·5 to 8 which were successively carried out were determined, and it was found that the partition walls 21 and 91 were removed from the other grooves 15, and the dissolved oxygen concentration decreased as the electrolysis time became longer. Increase the tendency of the via hole to be recessed. Further, as shown in Table 4, after the plating treatment of the sample Νο.丨, the partition walls 21 and 91 were electrolyzed in the other tank, and the dissolved oxygen concentration was increased over time. <Example 2> Using the plating apparatus shown in Fig. 13A and Fig. 13A, the object to be plated (sample No. 9 to 14) was subjected to electroplating copper under the following conditions. For the sample Ν〇. 12 to 14, as the other groove 15, a groove having the same partition walls 21, 9 ι as the device of Fig. 12 was used. Further, the plating tank 13 includes a tank body 47 as shown in Figs. 13A and 13β, and an overflow tank 49, and the plating liquid overflowing from the tank body 4 flows into the overflow tank 49. In the tank body 47, the plate-like objects of the cathode 57 are arranged in a horizontally arranged manner, and a plurality of anodes 55 are arranged on the upper and lower sides of the cathode 57, respectively. Further, nozzles 61 are disposed above and below the cathode 57, respectively. Each of the nozzles 61 is provided with a plurality of discharge ports (not shown) for discharging the ore liquid conveyed from the other tanks 15 through the return-side piping 41 toward the cathode 57 37 201109478 side. Further, in the "type material Νο·9 to 11', the partition walls 21 and 91 are removed from the other tank a. The difference between the upper edge portion of the first partition wall 21 and the third partition wall 91 to the plating liquid level is as follows. Three conditions of 5 cm' 1 〇 cm and - shown in Table 6 to be described later. As the object to be plated (cathode), a stainless steel plate and a substrate having a through hole are used. The inner diameter of the through hole of the substrate is 〇3. The thickness of the substrate is 1.6 mm. The conditions of other electroplated copper are as follows. The amount of bath of the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 1 000 liters of bath of the tank 15 ( The total amount of baths in the second space 17, the second space 19 and the third space 9 3): 14 〇〇 liter bath: 2400 liters of mineral liquid: copper sulfate plating solution (including copper sulfate pentahydrate and substance l〇〇) g/L, sulfuric acid · 200g / L, and vapor ion 5〇mg / L) Additive added to the mineral liquid: "THRU_CUp ETN" made by Shangcun Industrial Co., Ltd. The circulation speed of the plating solution: 3000 liters / min. Anode: Insoluble anode ( Coating the ruthenium oxide on Ti-Pt) In the second embodiment, the stainless steel plate was treated in the same manner as in the first step 1 to 8 of the first embodiment. Copper treatment and post-treatment. Further, the substrate having the through holes was subjected to conventional desmear treatment and electroless copper plating (〇. 3 #m) treatment in the same manner as in Example 1, and the same procedure as in Example 1 was carried out at 38 201109478. ~8 order of 丨, 7 &amp; accounted for 刖 刖 treatment, electroplating copper treatment and post-treatment. Further, the electroplated copper conditions of Example 2 are shown in Table 5. The electroplating copper treatment temperature (temperature of the plating solution) is 25 ° C 〇 * go * - a 〇 test the cathode current density in Table 5 is the A/dm2. [Table 5] Stainless steel plate cathode current density (ASD) 5.0 _ plating time (minutes) 45 ' film thickness (Am) 50 _ , 曲 The above conditions were used to conduct copper ore plating, and the dissolved oxygen concentration at this time was evaluated. , the physical properties of the membrane, the uniformity of the through holes (ΤΗ_τρ). The results are shown in Table 6. Further, Test (4) of each sample is shown in Table 7. The dissolved oxygen concentration is measured by the dissolved oxygen in the plating solution of the valve which is omitted from the return side pipe η installed on the downstream side of the transition gas 65 of Fig. 13 . Uniformity, which is defined as the ratio of the thickness of the ore-plated copper plated in the center of the through-hole to the thickness of the copper plated on the surface of the substrate near the through-hole. #,均性(ΤΗ-ΤΡ)' is as shown in Fig. 17, and after applying the ore copper m to the substrate 〇5 or more of the formation of the friend hole i〇5a, the key is measured in the depth direction of the through hole. The thicknesses e and f of the ore in the center portion and the thickness a to d' of the copper plating surface on the surface of the substrate in the vicinity of the through hole are obtained by substituting each value into the following formula (5). TH-TP(%)=2(e+f)/(a+b+c+d)xi〇〇(5) 39 201109478 [Table 6] Sample No. The specification of the tank is the circulating amount of dissolved oxygen concentration mg/ Liters of the physical properties TP TP % rise rate of the next drop ° / 〇 resistance tension kgf / mm2 9 no - 75 7.4 7.4 30.4 33.6 75.7 10 benefits - 75 to 23.4 23.5 37.8 70.7 11 no - 75 to 38.5 15.4 43.4 65.6 12 with (8) 5 Cm 75 to 21.5 24.5 37.5 72.5 13 Yes (8) 20cm 75 rpm 15.6 30.3 31.2 76.2 14 Yes (A) 10cm 75 rpm 18.5 30.1 32.2 75.6 [Table 7] Sample No. 9 Using grooved side plating without partition (separator) The liquid is plated on a stainless steel plate and a circuit board. 10 Continued sample No. 9, electrolysis for 3 hours. After that, the stainless steel plate and the circuit board are plated. 11 Continue the sample No. 10 and electrolyze for 3 hours. After that, the stainless steel plate and the circuit board are plated. 12 Electrolysis was carried out for 24 hours at a cathode current density of 5.0 ASD using a tank having a partition. After that, the stainless steel plate and the circuit board are plated. 13 Electrolyse for 24 hours at 5.0 ASD using a tank with a partition. After that, the stainless steel plate and the circuit board are plated. 14 Electrolyse for 24 hours at 5.0 ASD using a tank with a partition. After that, the stainless steel plate and the circuit board are plated. As a result of the sample No. 9 of Table 6, the dissolved oxygen concentration at the start of plating was 7.4 mg / liter, so that the physical property of the film was good. However, as a result of the sample Nos. 10 and 11, it was found that as the electrolysis time became longer and the dissolved oxygen concentration increased, the physical properties of the sample No. 10 after 3 hours deteriorated, and the TH-TP became relatively low. The sample No. 11 after 6 hours showed that the physical properties of the film became worse, and the TH-TP decreased to 65.6%. On the other hand, Sample Nos. 12 to 14 can suppress the increase in the concentration of dissolved oxygen by providing the partition walls 21 and 91 in the other grooves 15 to overflow the plating solution. In particular, 40 201109478 1 Ocm or more, below the above-mentioned samples, the effect of suppressing the increase in the dissolved oxygen concentration can be remarkably improved by the difference in the case where the plating solution is overflowed by the samples Νο·ΐ3, 14. No. 13, 14 ' can reduce the dissolved oxygen concentration to 2 〇 mg / liter. The film properties are also good ΤΗ TP-TP is also 75% or more. <Example 3 &gt; Electroplating of the object to be plated (Sample No. 15 to 18) was carried out under the following conditions using a plating apparatus as shown in Fig. 14 . For the samples N 〇 17 and 18, as the other grooves 15, the same grooves 21 and 9 ι as those of the device of Fig. 12 were used. Further, the plating tank 13, as shown in Fig. 14, includes a tank body 47, and an overflow tank 49, and the plating liquid overflowed from the tank body 47 flows into the overflow tank 49. Inside the groove body 47, the diaphragm 99 is divided into two spaces. As the intestinal film 99, an anode 55 is disposed in a space of "Y-9205T, a space-arranged cathode of the grid 5' of the space of the grid", and a nozzle 61 ^ nozzle 61 is disposed in the vicinity of the cathode 57. A discharge port (not shown) that ejects the plating liquid transported from the other side of the pipe through the return-side pipe 41 toward the cathode 57 is provided. Further, in the sample No. 15, 16, the partition wall 15 is used to remove the partition wall. 21, 91. The difference between the upper edge portion of the first partition wall 21 and the third partition wall 91 to the plating liquid surface is two conditions of 1 〇cm and 2 〇cin as shown in Table 9 to be described later. For the plating (cathode), a wafer having a stainless steel plate and a blind via is used. The opening diameter of the via hole in the substrate is 丨5 μm, and the depth of the via hole is 2 5 // m. The conditions are as follows: 41 201109478 The amount of bath in the plating tank 13 (total of the bath volume of the tank body 47 and the overflow tank 49): 50 liters of the bath volume of the tank 15 (in the second space 17, the second space 19 and the 3 The total amount of bath in space 93): 1 50 liter bath: 200 liters of key solution. Copper sulphate ore (containing copper sulfate and water) Material 2 QQ g / L, sulfuric acid 50g / L, and vaporization ion 50mg / L) Additive added to the menstrual fluid: "thru-cup ESA-21" plating solution manufactured by Shangcun Industrial Co., Ltd. Cycle speed: 100 liter / minute anode : Soluble anode (in the case of a titanium-containing phosphor-containing copper ball) In the third embodiment, the "stainless steel plate" was subjected to the prior treatment, the electroplating copper treatment, and the post-treatment in the same manner as in the first step of the first embodiment. Further, after the barrier layer and the seed layer were applied to the wafer by a conventional method, the prior treatment, the electroplating copper treatment, and the post treatment were carried out in the same manner as in the first embodiment. Further, the conditions for electroplating copper in Example 3 are shown in Table 8. The temperature of the electroplated steel treatment (temperature of the plating solution) was 25 °C. Further, the unit of the cathode current density in Table 8 is A/dm2.

以上述條件對被鍍物進行電鍍銅,評估此時之溶存氧 42 201109478 濃度、彼膜物性、導通孔的凹陷量。結果示於表9。此外, 於表1 0記載各試料的試驗程序。溶存氧濃度,係測定採自 安裝於圖14之過濾氣6 5之下游側之回送側配管41之省略 圖示之閥門之鑛液之溶存氧。 此外,於試料No. 15,在於他槽15之第1空間17藉 由使用空氣攪拌裝置94將空氣供給鍍液中邊進行空氣攪 拌施以鍍敷。 [表9 5式料 No. 他槽之規格 溶存氧濃度 mg/公升 彼膜物性 導通孔 凹陷量 //m 過濾器 隔壁 落差 空氣攪拌 延伸率 % 抗張力 kgf/ram2 15 無 - 有 3.8 30.5 33.4 7.4 m 16 無 - 益 7.1 31.3 33.1 3.5 換新品 17 有⑻ 20cm 無 7.7 30.7 32.6 2.7 白 18 有(A) 10cm 無 7.5 31.4 32.3 3.3 白 [表 10] 試料No. 15 使用無隔壁(隔板)之他槽,以陰極電流密度1.0ASD電解24小時。 之後,對不鏽鋼板及基板之以鍍敷。 16 試料No. 15之鍍敷之後,交換過濾器 之後馬上對不鏽鋼板及基板施以鍍敷。 17 使用具有隔壁之他槽,以1.0ASD電解24小時。 之後,對不鏽鋼板及基板施以鍍敷。 18 使用具有隔壁之他槽,以1.0ASD電解24小時。 之後,對不鏽鋼板及基板施以鍍敷。 一邊在他槽1 5之第1空間17進行空氣攪拌進行電解 之表9之試料No.15,鍍敷槽13之溶存氧濃度如表9所示 為3.8mg/公升,而此時之他槽15之溶存氧濃度為7.2mg/ 公升。藉由如此地進行空氣攪拌雖可將他槽的溶存氧濃度 維持在合適的範圍,但由於進行空氣攪拌會妨礙銅粒子在 43 201109478 空間17的沉降’於過濾器65確認到多數的銅粒子之 附著由於附著於該過濾器65之鋼粒子會消耗溶存氧,故 在於鑛敷槽之溶存氧濃度會下降,而有使導通孔凹陷量變 大的趨勢。 由試料No. 16之結果,交換過遽器65之後不久的銅粒 子幾乎沒有附著,故鍍敷槽的溶存氧濃度亦呈良好的值, 導通孔凹陷量亦變小。 试料No. 17、18,由銅粒子幾乎沒有附著於過濾器65 之狀態(新品最初的白色狀態),可知銅粒子有效地在第i 空間17沉降。如此地藉由在他槽設置隔壁使鍍液溢出可提 高溶存氧濃度的同時,可將銅粒子有效地由鍍液分離。藉 此,可將在於鍍敷槽的溶存氧濃度維持在合適的範圍,導 通孔凹陷量亦變小。 &lt;參考例&gt; 使用循環式伏特剝離法(CVS)測定法,調查鍍液中的溶 存氧濃度、光亮劑的濃度及Ar值之關係。CVS測定之方法 如下。 1 )Ar值之測定方法 將作為工作電極(W〇rking electrode)之旋轉白金電 極’作為輔助電極(counter electrode)之銅棒,作為來考 電級(Reference electrode)之銀/氣化銀雙鹽橋電極分別 浸潰在鍍液中’邊變化施加於旋轉白金電極之電位,反覆 鑛敷步驟、剝離步驟、及清洗步驟’製作電位_電流曲線 (Voltammogram),由該電位-電流曲線求剝離步驟之面積 44 201109478 (Ar 值)。 後述表11、1 2所示結果’係應用上述CVS測定法所得 者’藉由在於上述測定方法反覆連續掃描所得之Ar值之經 時變化。 2) 用於測定Ar值之測定機器、測定條件 測定機器:ECI公司製「QL-5」The object to be plated was subjected to electroplating copper under the above conditions, and the concentration of dissolved oxygen 42 201109478, the physical properties of the film, and the amount of depression of the via holes were evaluated. The results are shown in Table 9. Further, the test procedure of each sample is shown in Table 10. The dissolved oxygen concentration is measured by the dissolved oxygen of the ore of the valve which is omitted from the return-side pipe 41 installed on the downstream side of the filtered gas 65 of Fig. 14 . Further, in Sample No. 15, the first space 17 of the other tank 15 was plated by air agitation using air agitation means 94 while supplying air to the plating solution. [Table 9 5 type material No. The specification of the tank dissolved oxygen concentration mg / liter of the membrane physical permeability hole recessed / / m filter partition drop air stirring elongation % tensile strength kgf / ram2 15 no - there are 3.8 30.5 33.4 7.4 m 16 None - Benefit 7.1 31.3 33.1 3.5 New product 17 Yes (8) 20cm No 7.7 30.7 32.6 2.7 White 18 Yes (A) 10cm No 7.5 31.4 32.3 3.3 White [Table 10] Sample No. 15 Use the groove without partition (separator) Electrolyzed at a cathode current density of 1.0 ASD for 24 hours. Thereafter, the stainless steel plate and the substrate are plated. 16 After the plating of sample No. 15, the stainless steel plate and the substrate were plated immediately after the filter was exchanged. 17 Electrolyze at 1.0 ASD for 24 hours using a tank with a partition. Thereafter, the stainless steel plate and the substrate are plated. 18 Electrolyze at 1.0 ASD for 24 hours using a tank with a partition. Thereafter, the stainless steel plate and the substrate are plated. The sample No. 15 of Table 9 was electrolyzed by air agitation in the first space 17 of the tank 1 5, and the dissolved oxygen concentration of the plating tank 13 was 3.8 mg/liter as shown in Table 9, and at this time, the tank was The dissolved oxygen concentration of 15 is 7.2 mg / liter. By performing the air agitation in this manner, the dissolved oxygen concentration in the other tank can be maintained in an appropriate range. However, the air agitation hinders the sedimentation of the copper particles in the space of 43 201109478, and the majority of the copper particles are confirmed in the filter 65. Since the steel particles adhering to the filter 65 are depleted of dissolved oxygen, the concentration of dissolved oxygen in the ore-growing tank is lowered, and the amount of recessed in the via hole tends to increase. As a result of the sample No. 16, the copper particles immediately after the exchange of the crucible 65 were hardly adhered, so that the dissolved oxygen concentration in the plating tank was also good, and the amount of recessed in the via hole was also small. In Sample Nos. 17, and 18, the copper particles hardly adhered to the filter 65 (in the first white state of the new product), and it was found that the copper particles effectively settled in the i-th space 17. Thus, the copper particles can be effectively separated from the plating solution while the plating solution is overflowed by the partition wall in the other tank to increase the dissolved oxygen concentration. Thereby, the dissolved oxygen concentration in the plating tank can be maintained in an appropriate range, and the amount of recessed in the via hole becomes small. &lt;Reference Example&gt; The relationship between the dissolved oxygen concentration in the plating solution, the concentration of the brightener, and the Ar value was investigated using a cyclic volt stripping method (CVS) measurement method. The method of CVS measurement is as follows. 1) Method for measuring Ar value A rotating platinum electrode as a working electrode is used as a copper rod of a counter electrode as a silver/vaporized silver double salt of a reference electrode. The bridge electrode is immersed in the plating solution to change the potential applied to the rotating platinum electrode, and the re-plating step, the stripping step, and the cleaning step are used to create a potential-current curve (Voltammogram), and the potential-current curve is used to determine the stripping step. The area is 44 201109478 (Ar value). The results shown in Tables 11 and 12 below are the results obtained by applying the above CVS measurement method by the repeated measurement of the Ar value by the above-described measurement method. 2) Measuring equipment and measuring conditions for measuring Ar value Measuring equipment: "QL-5" manufactured by ECI Corporation

測定條件:旋轉白金電極之旋轉數2500rpm、電位婦 描速度100mV/秒、溫度25°C 3) 測定液 將測定液如下調製。將後述之VMS30mL放入容器,於 °玄谷器使用加入測定對象之鍍液30mL的混合液作為測定 液。 、 VMS及測定對象鍍敷液 一測足對象的鍍敷液,關於試料No_ 19〜23係如表η所 =於試料Νο.24〜28則如表12所示。即,試料Μ 中、 象鑛敷液,係於實施例1之試料No. 1之鍍敷處理 安裝於圖12之配管端部41c附近之配管之省略圖示 之間所採取之铲汸 _ 眚尬 X液’试料N〇. 20之測定對象鍍敷液,係於Measurement conditions: Rotational platinum electrode rotation number 2500 rpm, potential pumping speed 100 mV/sec, temperature 25 ° C 3) Measurement liquid The measurement liquid was prepared as follows. A VMS 30 mL, which will be described later, was placed in a container, and a mixed solution of 30 mL of a plating solution to be measured was used as a measuring liquid. , VMS and measurement target plating solution 1. The plating solution of the test object No. 19 to 23 is as shown in Table η = as shown in Table 12 for the sample Νο. 24 to 28. In other words, in the sample Μ, the ore-like coating liquid, the shovel taken between the illustrations of the piping of the sample No. 1 of the first embodiment, which is attached to the vicinity of the pipe end portion 41c of Fig. 12, is omitted.尬X liquid 'sample N 〇. 20 measurement object plating solution, tied to

貫施例1之埒粗M 鍍液。 D — N〇. 3之鍍敷處理中,由同樣的位置採取之 例? 卜試料No. 24之測定對象之鍍敷液’係於實施 65之〇. U之錢敷處理中,由安裝於圖13之過濾器 下游側之回送側配# 液,己s 41之省略圖示之閥所採取之鍍 式料No. 25之測定斟条 料。 又對象之鍍敷液,係於實施例2之試 .13之鍍敷處理中,山 ^ 由同樣的位置採取的鍍液。 45 201109478 此外,試料No· 21〜23及試料No. 26〜28之測定對象之 鍍敷液,係於燒杯中調製使調製後之測定液之溶存氧濃度 及光亮劑濃度呈表11、丨2之各試料之值。 試料No. 19〜23之測定對象之鍍敷液之添加劑,係使用 上村工業公司社製「THRU-CUP EVF-T」,試料Νο· 24~28之 測定對象之鍍敷液之添加劑,分別使用上村工業公司製之 「THRU-CUP ΕΤΝ」。 作為VMS (無添加添加劑之鑛敷液)’關於表11之試料 No_ 19〜23’使用硫酸銅鍍液(包含硫酸銅五水和物2〇〇g/L、 硫酸50g/L、及氯化物離子5〇mg/L),關於表12之試料 No. 24~28 ’使用硫酸銅鑛液(包含硫酸銅五水和物丨〇〇g/L、 硫酸20 0g/L、及氣化物離子5〇mg/L)。 5)測定結果 將測定結果示於表11及表1 2。 表11 試料 No. 測定對象 之鍍敷液 添加劑 溶存氧 濃度 (mg/L) 光亮劑 濃度 (%) Ar 值(me) 0 15分 30分45分 鐘後鐘後 60分 鐘後 75分90分 鐘後鐘後 105分120分 鐘後鐘後 19 試料No. 1 之鍍敷液 EVF-T 2.4 100 1.249 1.2 1.176 1.166 1.163 1.16 1.157 1.152 1.155 20 試料No. 3 之鍍敷液 7.7 100 1.142 1.143 1.144 1.145 1.144 1.144 1.144 1.142 1.142 21 燒杯建浴 8 100 1.155 1 158 1.16 1.162 1.157 1.158 1.157 1.16 1.157 22 燒杯建浴 8 200 1.211 1 ?,1?, 1.214 1.209 1.207 1.21 1.214] 1.218 1.213 23 燒杯建浴 8 20 1.11 1.104 1.111 1.Π3 1.114 1.111 1.104 1.1 Π02] 表12 試料 No. 測定對象 之鍍敷液 添加劑 溶存氧 濃度 (mg/L) 光亮劑 濃度 (%) Ar 值(me) 0 15分 鐘後 30分45分 鐘後鐘後 60分 鐘後 75分90分 鐘後鐘後 105分12U分 鐘後鐘後 24 試料No. 11 之鍍敷液 ETN 38.5 100 1.907 1.918 1.923 1.935 1.95 1.955 1.959 1.963 1.964 25 試料No. 13 之鍍敷液 15.6 100 1.967 1.965 1.963 1.963 1.963 1.965 1.966 1.964 1.967 27 燒杯建浴 8 100 1.97 1.973 1.973 1.974 1.972 1.969 1.972 1.973 1.975 燒杯建浴 8 200 2.01 2 009 2.012 2.013 2.011 2.008 2.007 2.008 2.009 2« 燒杯建浴 8 20 1.899 1.89 1.892 1.892 1.892 1.9 1.9 1.898 1.893 46 201109478 測疋之Ar值,反映光亮劑之濃度的高低。由表11, 如試料 N 〇 2 0、21 w、态木 λαp k s的浴存氧濃度及光亮劑濃度時, A二值為1 ·16左右。如試料n〇. 19,即使光亮劑濃度 ^而二⑷農度不足時’初期的Ar值大致與光亮劑濃度 :清:(試料n〇.22)為&quot;左右。該試料No. 19之Ar 隨者打間的經過降低至大致與試料Ν〇· 一樣的&quot;5 左右。 * ,商由表12 ’如試料N。·25、26 ’溶存氧濃度及光 正時,k值為W左右。如試…即使 光冗Μ濃度適當而溶存惫、.當 光亮劑濃度不足之情二=時’初期的AM大致與 試料Νο·24之Αι/值隨〇·28)一樣為1,91左右。該 一樣的1:左:者時間的經_ 再者’如上述試料N〇 H …別接近試料I” : /隨著 ^即’如果連續重複進行掃描,則 液,故如表11、12斛-仏 工虱會冷入測疋 度。空氣溶入測〜 溶存氧濃度變動而接近適當的濃 、 '疋液的理由係以旋轉白金雷搞德4丄The crude M plating solution of Example 1 was applied. D — N〇. 3 In the plating process, what is the case with the same position? The plating solution of the measurement target No. 24 is carried out after the implementation of 65. The U-packing process of the U-packing process on the downstream side of the filter attached to Fig. 13 is omitted. The measurement of the plating material No. 25 taken by the valve is shown. Further, the plating solution of the object was the plating solution taken from the same position in the plating treatment of the test of Example 2. 45 201109478 In addition, the plating solution for the measurement of the sample No. 21 to 23 and the sample No. 26 to 28 is prepared in a beaker so that the dissolved oxygen concentration and the brightener concentration of the prepared measurement liquid are shown in Table 11 and Table 2. The value of each sample. The additive of the plating solution to be measured by the sample No. 19 to 23 is used as "THRU-CUP EVF-T" manufactured by Uemura Industrial Co., Ltd., and the additives of the plating solution to be measured by the sample Νο· 24~28 are used. "THRU-CUP ΕΤΝ" made by Uemura Industrial Co., Ltd. As VMS (mineral solution without added additive) 'About sample No. 19 to 23' of Table 11, copper sulfate plating solution (containing copper sulfate pentahydrate and 2 g/L, sulfuric acid 50 g/L, and chloride) Ion 5〇mg/L), regarding the sample No. 24~28 of Table 12, the use of copper sulfate ore (including copper sulfate pentahydrate and substance g/L, sulfuric acid 20 g/L, and vaporization ion 5 〇mg/L). 5) Measurement results The measurement results are shown in Table 11 and Table 12. Table 11 Sample No. Determination of plating solution additive dissolved oxygen concentration (mg/L) Brightener concentration (%) Ar value (me) 0 15 minutes 30 minutes 45 minutes after 60 minutes after the clock 75 minutes 90 minutes after the clock After 105 minutes and 120 minutes later, 19 sample No. 1 plating solution EVF-T 2.4 100 1.249 1.2 1.176 1.166 1.163 1.16 1.157 1.152 1.155 20 Sample No. 3 plating solution 7.7 100 1.142 1.143 1.144 1.145 1.144 1.144 1.144 1.142 1.142 21 Beaker Bath 8 100 1.155 1 158 1.16 1.162 1.157 1.158 1.157 1.16 1.157 22 Beaker Bath 8 200 1.211 1 ?,1?, 1.214 1.209 1.207 1.21 1.214] 1.218 1.213 23 Beaker Bath 8 20 1.11 1.104 1.111 1.Π3 1.114 1.111 1.104 1.1 Π02] Table 12 Sample No. Measurement of plating solution additive dissolved oxygen concentration (mg/L) Brightener concentration (%) Ar value (me) 0 After 15 minutes, 30 minutes, 45 minutes, and 60 minutes after the clock After 75 minutes, 90 minutes, after the clock, 105 minutes, 12 U minutes, after the clock, 24 sample No. 11 plating solution ETN 38.5 100 1.907 1.918 1.923 1.935 1.95 1.955 1.959 1.963 1.964 25 Sample No. 13 plating solution 15.6 100 1.967 1.965 1.963 1.963 1.963 1.96 5 1.966 1.964 1.967 27 Beaker Bath 8 100 1.97 1.973 1.973 1.974 1.972 1.969 1.972 1.973 1.975 Beaker Bath 8 200 2.01 2 009 2.012 2.013 2.011 2.008 2.007 2.008 2.009 2« Beaker Bath 8 20 1.899 1.89 1.892 1.892 1.892 1.9 1.9 1.898 1.893 46 201109478 The value of Ar measured, reflecting the concentration of brightener. From Table 11, for example, when the sample N 〇 2 0, 21 w, the state λαp k s bath oxygen concentration and the brightener concentration, the A value is about 1.16. For example, if the concentration of the brightener is ^ and the concentration of the second (4) is insufficient, the initial Ar value is approximately the same as the brightener concentration: clear: (sample n〇.22) is "left and right." The Ar of the sample No. 19 was reduced to approximately the same as the sample &·5. *, the quotient is shown in Table 12' as sample N. · 25, 26 ‘ dissolved oxygen concentration and light timing, k is about W. For example, even if the concentration of the light is excessively dissolved, the concentration of the brightener is insufficient. When the concentration of the brightener is insufficient, the initial AM is approximately 1,91, which is approximately the same as the sample Νο. The same 1: left: the time of the _ again 'such as the above sample N 〇 H ... not close to the sample I": / with ^ ie 'If the scanning is repeated continuously, the liquid, so as shown in Table 11, 12 - The 虱 虱 冷 冷 。 。 。 。 。 。 。 。 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气 空气

的溶存氧濃度接近於轉金電極授掉,及VMS &lt;於二軋的飽和濃度。 【圖式簡單說明】 圖1係表示關於本發明 構成圖。 弟1貫轭形態之電鍍裝置之 圖2Α〜圖2F係八± _ '、刀別表示在於上述電錢裝置的他槽之上 47 201109478 緣部之構造之變形例。 圖3A圖3E係分別表示輸送側配管之形狀及配置狀態 之變形例。 &amp; 圖4係表示關於本發明之第2實施形態之電鍍裝置之 他槽之構成圖。 圖5係表示關於本發明第3實施形態之電鍍裝置之他 槽之構成圖。 圖6係表示關於本發明第4實施形態之電鍍裝置之構 成圖。 圖7係表示關於本發明第5實施形態之電鍍裝置之構 成圖。 圖8A及圖8B係表示關於本發明第6實施形態之電鍍 裝置之錢敷槽之構成圖。 圖9A及圖9B係表示關於本發明第7實施形態之電鍍 裝置之鍍敷槽之構成圖。 圖10係表示關於本發明第8實施形態之電鍍裝置之構 成圖。 圖11A係表示關於本發明第9實施形態之電鍍裝置之 他槽的第1隔壁之圖,圖11B係圖11A之XIB-XIB線剖面 圖。 圖12係表示使用於實施例1之電鍍裝置之構成圖。 圖13 A係表示使用於實施例2之電鍍裝置之構成圖, 圖13B係圖13A之ΧΙΙΙΒ-ΧΙΠΒ線剖面圖。 圖14係表示使用於實施例3之電鍍裝置之構成圖。 48 201109478 圖1 5A及圖15B係用於說明在於實施例卜3之導通孔 的凹陷量之測定方法之剖面圖。 圖16係表示在於實施例1〜3用於測定伸展率及抗張力 之試驗片之形狀之平面圖。 圖17 (throwing 係用於說明在於實施例2之通孔之均一性 P〇Wer)之評估方法之剖面圖。 主要元件符號說明】 11〜電鍍裝置; 15〜他槽; 19〜第2空間; 2卜第1隔壁; 2 4 ~上緣部; 27〜突出片; 27b〜縱部; 2 9 a〜供給口; 3 2〜金屬粒子; 35〜第2隔壁; 4卜回送側配管; 4 lb〜端部; 4 3〜再供給配管; 43b〜号供給配管43之另 45〜隔板; 4 9〜溢出槽; 13 ~鍵敷槽; 17~第1空間; 20〜他槽本體; 23〜上緣部; 25〜隔壁主體; 27a〜橫部; 2 9〜輪送側配管; 3卜沉降空間; 3 3〜供給空間; 35a〜上緣部; 41 a ~端部; 41 c〜端部; 43a〜再供給配管43之一端 一端; 47〜槽本體; 51〜侧壁; 49 201109478 53〜上緣部; 55〜陽極; 5 7 ~陰極; 59〜陽極袋; 61~喷嘴; 63〜幫浦; 64-幫浦; 6 5〜過濾器; 66〜幫浦; 6 8 ~過濾、器; 71〜上游側空間; 73~下游側空間 75〜第1槽; 77〜第2槽; 7 9〜貫通口; 8 3 ~吐出管; 85〜貫通口; 9卜第3隔壁; 93〜第3空間; 95a〜突出片。 95〜貫通口; 50The dissolved oxygen concentration is close to that of the gold-transferred electrode, and the saturation concentration of the VMS &lt; BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the configuration of the present invention. Fig. 2A to Fig. 2F are eight ± _ ', and the knife is shown on the other side of the above-mentioned money money device. 47 201109478 A modification of the structure of the edge portion. 3A to 3E show a modification of the shape and arrangement state of the conveying-side piping, respectively. Fig. 4 is a view showing the configuration of a groove of a plating apparatus according to a second embodiment of the present invention. Fig. 5 is a view showing the configuration of a groove of a plating apparatus according to a third embodiment of the present invention. Fig. 6 is a view showing the configuration of a plating apparatus according to a fourth embodiment of the present invention. Fig. 7 is a view showing the configuration of a plating apparatus according to a fifth embodiment of the present invention. Figs. 8A and 8B are views showing the configuration of a money application tank of the plating apparatus according to the sixth embodiment of the present invention. Fig. 9A and Fig. 9B are views showing the configuration of a plating tank of a plating apparatus according to a seventh embodiment of the present invention. Fig. 10 is a view showing the configuration of a plating apparatus according to an eighth embodiment of the present invention. Fig. 11A is a view showing a first partition wall of another tank of the plating apparatus according to the ninth embodiment of the present invention, and Fig. 11B is a sectional view taken along line XIB-XIB of Fig. 11A. Fig. 12 is a view showing the configuration of a plating apparatus used in the first embodiment. Fig. 13A is a view showing a configuration of a plating apparatus used in the second embodiment, and Fig. 13B is a cross-sectional view taken along line ΧΙΙΙΒ-ΧΙΠΒ of Fig. 13A. Fig. 14 is a view showing the configuration of a plating apparatus used in the third embodiment. 48 201109478 Fig. 1A and Fig. 15B are cross-sectional views for explaining a method of measuring the amount of depression of the via hole in the embodiment 3. Fig. 16 is a plan view showing the shapes of the test pieces for measuring the elongation and the tensile strength in Examples 1 to 3. Figure 17 (throwing is a cross-sectional view for explaining the evaluation method of the uniformity of the via hole of the second embodiment). Main component symbol description] 11 ~ plating device; 15 ~ his groove; 19 ~ 2nd space; 2 Bu 1st partition; 2 4 ~ upper edge; 27 ~ protruding piece; 27b ~ vertical part; 2 9 a~ supply port ; 3 2 ~ metal particles; 35 ~ second partition; 4 b return side piping; 4 lb ~ end; 4 3 ~ re-supply pipe; 43b ~ supply pipe 43 another 45 ~ baffle; 4 9 ~ overflow trough ; 13 ~ key groove; 17 ~ first space; 20 ~ his groove body; 23 ~ upper edge; 25 ~ partition body; 27a ~ horizontal; 2 9 ~ wheel side piping; 3 pad settlement space; 3 3 ~ supply space; 35a ~ upper edge portion; 41 a ~ end portion; 41 c ~ end portion; 43a ~ one end of one end of the supply pipe 43; 47 ~ groove body; 51 ~ side wall; 49 201109478 53 ~ upper edge portion; 55 ~ anode; 5 7 ~ cathode; 59 ~ anode bag; 61 ~ nozzle; 63 ~ pump; 64 - pump; 6 5 ~ filter; 66 ~ pump; 6 8 ~ filter, 71 ~ upstream side Space; 73~ downstream side space 75~1st slot; 77~2nd slot; 7 9~through port; 8 3 ~ spout pipe; 85~through port; 9b third partition wall; 93~3rd space; 95a~ protruding piece. 95~through port; 50

Claims (1)

201109478 七、申請專利範圍: 1. 一種電鍍裝置,包括: 儲留鍍液之锻敷槽;及 他槽,其係與上述链敷槽為別體之槽,上述链液於與 上述鍍敷槽之間循環, 、 上述他槽,於其内部具有:第1空間;及位於較該第 1空間為下游側之第2空間,而具有:上述第丨空間内的 上述鑛液之中超過既定高度的部分由上述f i空間流入上 述第2空帛’上述鍍液在於該第2空間在空氣中流下 造。 2. 如申明專利鞄圍第(項所述的電鍍裝置,其中上述 他槽’具有隔開上述第1空間與上述第2空間而在上下方 向延設的隔壁,具有上述第1也 一 二間的上述鍍液溢出在於上 述隔壁位於上述既定高度之 之上緣部流入上述第2空間之構 造。 3. 如申請專㈣㈣1項所料讀裝置,其中上述 他槽’具有隔開上述第1空間 间與上述第2空間而在上下方 向延設的隔壁,具有上述第i办 _ 二間的上述鑛液通過在於上 述隔壁位於上述既定高度之 員通口流入上述第2空間之構 造。 4. 如申請專利範圍第2項 , 項所迷的電鍍裝置,其中上述 :壁的上述上緣部’具有向上述第2空間側延設之突出 片’上述突出片具有由上述隔壁的側面離隔之先端。 5. 如申請專利範圍第4項所述的電鍍裝置,其中上述 51 201109478 突出片,具有向上述第2空間側橫方向 橫邻之弈媸6 6延伸之橫部及由該 検邛之先鈿向下方向延伸之縱部, 壁之側面離隔。 D。之先端與上述隔 6.如申請專利範圍第〗至5 置,其中進、令任—項所述的電鍍裝 步具有由上述鍍敷槽對上述他 液之輸送側配管, 槽輸送上述鍍 上述輸送側配管,具有對上述 液之供給口, 在工間供給上述鍍 上述供給口,位於較上述既定高度為下方。 7.如申請專利範圍第6項所述的電鍍裝置 鍍液由上述供山 ,、中上述 …: 出方向朝向上述他槽之内側面。 &amp;如申峋專利範圍第丨至5 置,其中進-步包括: -項所述的電鑛裝 管,由上述鐘敷槽對上述他槽輸送上述錢液之輸送側配 上述他槽,具有: 第1隔壁,其係為隔開 而上下方向延設者;及31第1工間與上述第2空間 第2隔壁,其係將上 鍍液中η显 (弟1工間的内部,分成使上述 ,. ,屬粒子沉降的沉降空間,及位於該沉降空間之 游側’由上述輸送側配管之供給口供 空間,而上下方向延設者。 ⑺丨鑛液之供給 第?申4專利犯圍第8項所述的電錄裝置,Α中上述 第2隔壁,具有設於較 置/、中上述 Λ疋同度為下方,連通上述沉 52 201109478 降空間與上述供給空間之複數連通口。 ίο.如申請專利範圍第8項所述的電鍍裝置,其中上述 第2隔壁之上緣部位於上述既定高度或者較上述既定高产 為下方。 &amp; 11.如申請專利範圍第丨項所述的電鍍裝置,其中進一 步包括:由上述他槽將上述鍍液送回上述鍍敷槽之回送側 配管;及將上述他槽所排出之上述鍍液送回上述第1介門 之再供給配管。 12. 如申請專利範圍第丨項所述的電鍍襞置,其中進一 步包括:設於較上述第i空間為下游側之機械式攪拌機。 13. 如申請專利範圍第丨項所述的電鍍襞置,其中上述 鍍敷槽’具有:儲留上述鑛液之槽本體;及該槽本體—體 設置,上述槽本體之上述鍍液溢出上述槽本體之側壁之上 緣部而流入之溢出槽, ’ ’ 一 π,夂仪於較該上 游側空間為下游側之下游側空間,而具有上述鑛液由上述 上游側空間流入上述下游側空間流下空氣中之構造。 14.如U專利第13項所述的電料置其中上 述槽本體的上述上緣部’具有向上述溢出槽侧延設之突出 片,上述突出片具有與上述槽本體之側面離隔之先端。 15·如申請專利範圍第1項所述的電鑛裝置’立中上述 鑛液=在於上述第2空間流下空氣中的落差是1 一。 •如申凊專利範圍第1項所述的電鍍裝置,其中上述 鍍液係使用於鍍銅者,包含作 置其中这 作為忐允劑之含硫有機化合物。 53 201109478 I7.—種電鍍方法 與該鍍敷槽為別體之槽 環之他槽之電鍍裝置, 使用包括:儲留鍍液之鍍敷槽丨 ,上述鍍液於與上述鍍敷槽之間循 上述他槽,於甘〜 空間為下游倒之第2、有!具有··第1空間;及位於較第 〈弟2有空間, 在於上述第丨介 二間,將上述鍍液儲留至既定 上述鍍液中的金屈私之 由王尤疋阿度,使 金屬粒子沉降於上述第1空間之下方, 使上述第1 + , 二θ内的上述鍍液之中超過上 的部分流入上述第2办Μ ^ &amp; 玫无疋呵度 弟ζ二間,藉由使上述鍍液 間流下空氣中而調整上述鍍液之 ;第2空 法。 合仔軋/晨度之電氣鍍方 18.如申請專利範圍 述鍍液係使用於鍍銅者 物。 第17項所述的電鍍裝置,其中上 ’包含作為光亮劑之切有機化合 54201109478 VII. Patent application scope: 1. An electroplating device comprising: a forging groove for storing a plating solution; and a groove thereof, which is a groove corresponding to the chain groove, and the chain liquid is in the plating groove Circulating, the other groove having a first space therein and a second space located downstream of the first space, and having a predetermined height of the mineral liquid in the second space The portion flows into the second space by the fi space. The plating solution is formed by flowing the second space in the air. 2. The plating apparatus according to the above aspect of the invention, wherein the other tank has a partition wall extending in the vertical direction so as to partition the first space from the second space, and has the first one and two The plating solution overflows in a structure in which the partition wall is located at an upper edge of the predetermined height and flows into the second space. 3. The application device of the above-mentioned (4) (4), wherein the above-mentioned other tanks are spaced apart from the first space The partition wall extending in the vertical direction from the second space has a structure in which the ore liquid having the i-th office has flowed into the second space through a member opening of the partition wall at the predetermined height. The plating apparatus according to Item 2, wherein the upper edge portion of the wall has a protruding piece extending toward the second space side. The protruding piece has a tip end separated from a side surface of the partition wall. The electroplating apparatus according to claim 4, wherein the above-mentioned 51 201109478 protruding piece has a horizontal direction extending transversely to the second space side. And the longitudinal portion extending from the ridge of the rafter in the downward direction, the side of the wall is separated from the side. The apex of the D. is separated from the above. 6. The scope of the patent application is 5-1 to 5, wherein the The plating step has a transfer side pipe to the other liquid by the plating tank, and the groove is transported to the transfer side pipe, and the supply port for the liquid is supplied to the supply port, and the supply port is provided at the predetermined height. 7. The plating solution of the electroplating apparatus according to item 6 of the patent application is provided by the above-mentioned mountain supply, the above-mentioned...: the outward direction toward the inner side of the above-mentioned groove. &amp; And wherein the step further comprises: the electric ore tube according to the item, wherein the transporting side of the money tank is transported by the bell jar to the other tank, and the first side wall is separated by And the first and second working chambers of the second space and the second partition wall of the second space are formed by η in the plating solution (the inside of the first working chamber is divided into the above, and the sedimentation of the particles is sedimentation). Space, and located in the settlement space The side 'the space is supplied from the supply port of the above-mentioned transport side pipe, and is extended in the up-and-down direction. (7) The supply of the sputum ore is the electric recording device described in Item 8 of the patent application, and the second partition wall of the sputum has And the above-mentioned second aspect of the present invention is provided in the above-mentioned second aspect, and the above-mentioned second aspect is connected to the plurality of communication ports of the above-mentioned supply space. The upper edge of the partition wall is located at the above-mentioned predetermined height or is lower than the above-mentioned predetermined high-production. The electroplating apparatus according to the above aspect of the invention, further comprising: returning the plating solution to the plating by the above-mentioned other tank a returning side piping of the groove; and a resupply pipe for returning the plating solution discharged from the other tank to the first door. 12. The electroplating device of claim 2, wherein the electroplating device further comprises: a mechanical agitator disposed on a downstream side of the i-th space. 13. The electroplating device according to claim 2, wherein the plating tank has: a tank body for storing the ore liquid; and the tank body is disposed, the plating solution of the tank body overflowing the above An overflow groove into which the upper edge of the side wall of the groove body flows, ' 一 π , the downstream side space of the downstream side of the upstream side space, and the above-mentioned ore liquid flows into the downstream side space from the upstream side space The structure of the air flowing down. 14. The electric material according to Item 13, wherein the upper edge portion of the groove body has a protruding piece extending toward the overflow groove side, and the protruding piece has a tip end spaced apart from a side surface of the groove body. 15. The electric ore device according to claim 1, wherein the ore solution has a drop in the air in the second space. The electroplating apparatus according to claim 1, wherein the plating solution is used for copper plating, and comprises a sulfur-containing organic compound in which the solvent is used as a buffer. 53 201109478 I7. The electroplating method and the electroplating device of the groove in which the plating tank is a groove of the other body, using a plating tank comprising: a plating bath, the plating solution being between the plating tank and the plating tank According to the above-mentioned trough, the second to the second is the space that is downstream of the gan~ space! There is a space in the first place; and there is space in the second dynasty, in the second place, the above plating solution is stored. In the predetermined plating solution, the gold particles are placed under the first space, and the upper portion of the plating solution in the first + 2 and the second θ flows into the above-mentioned first space. The second method is to adjust the plating solution by flowing the above plating solution into the air; the second empty method. The electric plating of the tie/morning. 18. If the scope of the application is used, the plating solution is used for copper plating. The electroplating apparatus according to item 17, wherein the upper portion comprises a cut organic compound as a brightener.
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