TWI502609B - Photovoltaic cell element, and photovoltaic cell - Google Patents

Photovoltaic cell element, and photovoltaic cell Download PDF

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TWI502609B
TWI502609B TW101112901A TW101112901A TWI502609B TW I502609 B TWI502609 B TW I502609B TW 101112901 A TW101112901 A TW 101112901A TW 101112901 A TW101112901 A TW 101112901A TW I502609 B TWI502609 B TW I502609B
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electrode
particles
mass
solar cell
tin
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Shuichiro Adachi
Masato Yoshida
Takeshi Nojiri
Mitsunori Iwamuro
Keiko Kizawa
Takuya Aoyagi
Hiroki Yamamoto
Takashi Naito
Takahiko Kato
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Hitachi Chemical Co Ltd
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Description

太陽電池元件以及太陽電池Solar cell components and solar cells

本發明是有關於一種電極用膠組成物、太陽電池元件以及太陽電池。The present invention relates to a gel composition for an electrode, a solar cell element, and a solar cell.

通常,於矽系太陽電池的受光面及背面形成有電極。為了將藉由光的射入而於太陽電池內轉換而成的電能高效地導出至外部,需要上述電極的體積電阻率足夠低、及與Si基板形成良好的歐姆接觸。尤其,為了將太陽光的射入量損失抑制成最低限度,受光面的電極存在減小配線寬度、且提高電極的縱橫比的傾向。Usually, an electrode is formed on the light receiving surface and the back surface of the lanthanide solar cell. In order to efficiently conduct electric energy converted into a solar cell by the incident of light, the volume resistivity of the above electrode is required to be sufficiently low, and a good ohmic contact with the Si substrate is required. In particular, in order to minimize the loss of incident amount of sunlight, the electrode on the light-receiving surface tends to have a reduced wiring width and an increased aspect ratio of the electrode.

用於太陽電池的受光面的電極通常以如下方式形成。即,於藉由在p型矽基板的受光面側形成紋理(凹凸),繼而使磷等在高溫下熱擴散而形成的n型矽層上,藉由網版印刷等來塗佈導電性組成物,然後於大氣中以800℃~900℃對其進行煅燒,藉此形成受光面電極。形成該受光面電極的導電性組成物中包含導電性金屬粉末、玻璃粒子及各種添加劑等。The electrode for the light receiving surface of the solar cell is usually formed in the following manner. In other words, the conductive composition is applied by screen printing or the like on the n-type germanium layer formed by forming a texture (concavity and convexity) on the light-receiving surface side of the p-type germanium substrate and then thermally diffusing phosphorus or the like at a high temperature. The material is then calcined at 800 ° C to 900 ° C in the atmosphere to form a light-receiving surface electrode. The conductive composition forming the light-receiving surface electrode contains conductive metal powder, glass particles, various additives, and the like.

作為上述導電性金屬粉末,通常使用銀粉末。其原因可列舉:銀粒子的體積電阻率為1.6×10-6 Ω.cm而較低;於上述煅燒條件下銀粒子自我還原並進行燒結;可與矽基板形成良好的歐姆接觸;另外,焊錫材料對於包含銀粒子的電極的潤濕性優異,於利用玻璃基板等密封太陽電池元件的所謂模組化中,可較佳地黏著將太陽電池元件間電性連 接的接合線。As the conductive metal powder, silver powder is usually used. The reason for this is as follows: the volume resistivity of the silver particles is 1.6×10 -6 Ω. Cm is lower; the silver particles self-reduced and sintered under the above calcination conditions; can form a good ohmic contact with the ruthenium substrate; and the solder material is excellent in wettability to the electrode containing silver particles, and is sealed by using a glass substrate or the like. In the so-called modularization of the solar cell element, a bonding wire for electrically connecting the solar cell elements can be preferably adhered.

如上述所示,含有銀粒子的導電性組成物作為太陽電池的電極表現出優異的特性。另一方面,由於銀為貴金屬且原料金屬本身的價格高,因此期望提出一種代替含有銀的導電性組成物的膠材料,另外,就資源的問題而言,亦期望提出一種代替含有銀的導電性組成物的膠材料。作為有希望代替銀的材料,可列舉應用於半導體配線材料的銅。銅不僅資源豐富,且原料金屬成本亦為銀的約1%而廉價。但是,銅是於大氣中在200℃以上的高溫下容易氧化的材料,難以藉由上述步驟來形成電極。As described above, the conductive composition containing silver particles exhibits excellent characteristics as an electrode of a solar cell. On the other hand, since silver is a noble metal and the price of the raw material metal itself is high, it is desirable to propose a rubber material instead of the conductive composition containing silver. Further, in terms of resources, it is also desired to provide a conductive alternative to containing silver. The gel material of the sexual composition. As a material which is expected to replace silver, copper which is applied to a semiconductor wiring material can be cited. Copper is not only rich in resources, but also the cost of raw metal is also about 1% of silver and cheap. However, copper is a material which is easily oxidized at a high temperature of 200 ° C or higher in the atmosphere, and it is difficult to form an electrode by the above steps.

為了解決銅所具有的上述課題,例如於日本專利特開2005-314755號公報及日本專利特開2004-217952號公報等中報告有如下的銅粒子:利用各種方法對銅賦予耐氧化性,即便進行高溫煅燒亦不會氧化。In order to solve the problems of the above-mentioned problems, the following copper particles are reported in the copper, and the copper is imparted with oxidation resistance by various methods, even if it is used in the case of the above-mentioned problems, for example, in the case of the above-mentioned Japanese Patent Publication No. 2005-217755, and the like. High temperature calcination does not oxidize.

但是,即便是上述銅粒子,其具有的耐氧化性至多達到300℃為止,於800℃~900℃的高溫下基本上氧化,因此作為太陽電池用電極尚未達到實用。進而,存在如下等課題:為了賦予耐氧化性而應用的添加劑等阻礙煅燒中的銅粒子的燒結,結果無法獲得如銀般的低電阻的電極。However, even if the copper particles have oxidation resistance up to 300 ° C and are substantially oxidized at a high temperature of 800 ° C to 900 ° C, the electrode for solar cells has not yet reached practical use. Further, there is a problem that an additive or the like applied to impart oxidation resistance inhibits sintering of copper particles during firing, and as a result, an electrode having a low resistance such as silver cannot be obtained.

另外,作為抑制銅的氧化的其他方法,可列舉於氮氣等的環境下對將銅用於導電性金屬粉末的導電性組成物進行煅燒這一特殊的步驟。Further, as another method for suppressing oxidation of copper, a special step of firing a conductive composition using copper for a conductive metal powder in an atmosphere such as nitrogen gas is exemplified.

但是,當使用上述方法時,為了完全地抑制銅粒子的氧化而需要藉由上述環境氣體來完全密封的環境,於步驟 成本方面不適合太陽電池元件的量產。However, when the above method is used, in order to completely suppress the oxidation of the copper particles, an environment completely sealed by the above-mentioned ambient gas is required, in the step Cost is not suitable for mass production of solar cell components.

作為用以將銅應用於太陽電池電極的另一個課題,可列舉與矽基板的歐姆接觸性。即,即便可使包含銅的電極於高溫煅燒中不氧化而形成,因銅與矽基板直接接觸,故有時亦會產生銅與矽的相互擴散,而在電極與矽基板的界面形成包含銅與矽的反應物相(Cu3 Si)。Another problem to apply copper to a solar cell electrode is ohmic contact with a tantalum substrate. That is, even if the electrode containing copper can be formed without oxidation during high-temperature firing, since copper is in direct contact with the ruthenium substrate, interdiffusion of copper and ruthenium may occur, and copper is formed at the interface between the electrode and the ruthenium substrate. Reaction phase with ruthenium (Cu 3 Si).

該Cu3 Si的形成有時自矽基板的界面起遍及至數μm為止,而存在Si基板側產生龜裂的情況。另外,存在如下的情況:貫穿事先形成於矽基板上的n型矽層,使太陽電池所具有的半導體性能(pn接合特性)劣化。另外,存在如下的可能性:所形成的Cu3 Si抬高包含銅的電極等,而阻礙該電極與矽基板的密接性,導致電極的機械強度下降。The formation of the Cu 3 Si may be repeated from the interface of the ruthenium substrate to several μm, and cracks may occur on the Si substrate side. In addition, there is a case where the semiconductor performance (pn junction characteristics) of the solar cell is deteriorated through the n-type germanium layer previously formed on the germanium substrate. Further, there is a possibility that the formed Cu 3 Si raises the electrode or the like containing copper, and the adhesion between the electrode and the ruthenium substrate is inhibited, resulting in a decrease in mechanical strength of the electrode.

本發明是鑒於上述課題而完成的發明,其目的在於提供一種電極用膠組成物、以及具有使用該電極用膠組成物所形成的電極的太陽電池元件及太陽電池,上述電極用膠組成物是如下的組成物:煅燒時的銅的氧化得到抑制,可形成電阻率低的電極,進而銅與矽基板的反應物相的形成得到抑制,可形成具有良好的歐姆接觸的含有銅的電極。The present invention has been made in view of the above-described problems, and an object of the invention is to provide a battery composition for an electrode, and a solar cell element and a solar cell having an electrode formed using the electrode composition, wherein the electrode composition is The composition is such that oxidation of copper during firing is suppressed, an electrode having a low specific resistance can be formed, and formation of a reaction phase between copper and a tantalum substrate can be suppressed, and a copper-containing electrode having good ohmic contact can be formed.

本發明者等人為了解決上述課題而進行了努力研究,結果完成了本發明。即,本發明包括以下的形態。The inventors of the present invention have diligently studied in order to solve the above problems, and as a result, have completed the present invention. That is, the present invention includes the following aspects.

本發明的第一形態是一種電極用膠組成物,其包含:含有磷的銅合金粒子、含有錫的粒子、玻璃粒子、溶劑、以及樹脂。A first aspect of the present invention is a paste composition for an electrode comprising: copper alloy particles containing phosphorus, particles containing tin, glass particles, a solvent, and a resin.

上述電極用膠組成物較佳為上述含有磷的銅合金粒子中的磷含有率為6質量%以上、8質量%以下。The electrode composition for an electrode preferably has a phosphorus content of the phosphorus-containing copper alloy particles of 6 mass% or more and 8 mass% or less.

另外,上述含有錫的粒子較佳為選自錫粒子及錫含有率為1質量%以上的錫合金粒子中的至少1種。In addition, the tin-containing particles are preferably at least one selected from the group consisting of tin particles and tin alloy particles having a tin content of 1% by mass or more.

另外,上述玻璃粒子較佳為玻璃軟化點為650℃以下,結晶化起始溫度超過650℃。Further, the glass particles preferably have a glass softening point of 650 ° C or less and a crystallization onset temperature of more than 650 ° C.

上述電極用膠組成物較佳為將上述含有磷的銅合金粒子及上述含有錫的粒子的總含有率設為100質量%時的上述含有錫的粒子的含有率為5質量%以上、70質量%以下。The content of the tin-containing particles when the total content of the phosphorus-containing copper alloy particles and the tin-containing particles is 100% by mass is preferably 5% by mass or more and 70% by mass. %the following.

上述電極用膠組成物較佳為更包含銀粒子,更佳為將上述含有磷的銅合金粒子、上述含有錫的粒子及銀粒子的總含有率設為100質量%時的上述銀粒子的含有率為0.1質量%以上、10質量%以下。The electrode composition for an electrode preferably further contains silver particles, and more preferably contains the silver particles when the total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is 100% by mass. The rate is 0.1% by mass or more and 10% by mass or less.

上述電極用膠組成物較佳為上述含有磷的銅合金粒子、上述含有錫的粒子及上述銀粒子的總含有率為70質量%以上、94質量%以下,上述玻璃粒子的含有率為0.1質量%以上、10質量%以下,上述溶劑及上述樹脂的總含有率為3質量%以上、29.9質量%以下。The electrode composition for an electrode preferably has a total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles of 70% by mass or more and 94% by mass or less, and the content of the glass particles is 0.1% by mass. The total content of the solvent and the resin is 3% by mass or more and 29.9% by mass or less.

本發明的第二形態是一種太陽電池元件,其具有對被賦予至矽基板上的上述電極用膠組成物進行煅燒而形成於上述矽基板上的電極。According to a second aspect of the invention, there is provided a solar cell element comprising an electrode formed by baking the electrode composition applied to the electrode substrate on the crucible substrate.

上述電極較佳為包含Cu-Sn合金相及Sn-P-O玻璃相,更佳為上述Sn-P-O玻璃相配置在上述Cu-Sn合金相與矽基板之間。Preferably, the electrode comprises a Cu-Sn alloy phase and a Sn-P-O glass phase, and more preferably, the Sn-P-O glass phase is disposed between the Cu-Sn alloy phase and the ruthenium substrate.

本發明的第三形態是一種太陽電池,其包括:上述太陽電池元件、及配置於上述太陽電池元件的電極上的接合線。A third aspect of the present invention provides a solar battery comprising: the solar cell element; and a bonding wire disposed on an electrode of the solar cell element.

根據本發明,可提供一種電極用膠組成物、以及具有使用該電極用膠組成物所形成的電極的太陽電池元件及太陽電池,上述電極用膠組成物是如下的組成物:煅燒時的銅的氧化得到抑制,可形成電阻率低的電極,進而銅與矽基板的反應物相的形成得到抑制,可形成具有良好的歐姆接觸的含有銅的電極。According to the present invention, it is possible to provide a solar cell component and a solar cell having an electrode formed using the electrode composition, and the electrode composition for electrode is a composition: copper at the time of firing The oxidation is suppressed, and an electrode having a low specific resistance can be formed, whereby formation of a reactant phase of copper and a tantalum substrate can be suppressed, and a copper-containing electrode having a good ohmic contact can be formed.

於本說明書中,「步驟」這一用語不僅是指獨立的步驟,即便在無法與其他步驟明確地加以區分的情況下,只要達成該步驟的預期的作用,則亦包含於本用語中。另外,於本說明書中,使用「~」所示的數值範圍表示分別包括「~」的前後所記載的數值作為最小值及最大值的範圍。進而,於本說明書中,當論及組成物中的各成分的量時,在組成物中存在多個相當於各成分的物質的情況下,只要事先無特別說明,則表示組成物中所存在的該多個物質的合計量。In the present specification, the term "step" means not only an independent step, but even if it cannot be clearly distinguished from other steps, it is included in the term as long as the intended effect of the step is achieved. In addition, in the present specification, the numerical range indicated by "~" indicates a range in which the numerical values described before and after including "~" are the minimum value and the maximum value. Further, in the present specification, when the amount of each component in the composition is referred to, when a plurality of substances corresponding to the respective components are present in the composition, unless otherwise specified, the presence of the composition is indicated. The total amount of the plurality of substances.

<電極用膠組成物><electrode composition for electrodes>

本發明的電極用膠組成物包含至少1種含有磷的銅合金粒子、至少1種含有錫的粒子、至少1種玻璃粒子、至少1種溶劑、以及至少1種樹脂。藉由該構成,於大氣中 煅燒時的銅的氧化得到抑制,可形成電阻率低的電極。進而,銅與矽基板的反應物相的形成得到抑制,所形成的電極與矽基板可形成良好的歐姆接觸。The electrode composition for an electrode of the present invention comprises at least one type of copper alloy particles containing phosphorus, at least one type of tin-containing particles, at least one type of glass particles, at least one type of solvent, and at least one type of resin. With this composition, in the atmosphere Oxidation of copper during calcination is suppressed, and an electrode having a low specific resistance can be formed. Further, the formation of the reactant phase of the copper and the tantalum substrate is suppressed, and the formed electrode and the tantalum substrate can form a good ohmic contact.

(含有磷的銅合金粒子)(copper alloy particles containing phosphorus)

電極膠用組成物包含至少1種含有磷的銅合金粒子。作為含有磷的銅合金,已知有被稱為磷銅焊料(磷濃度:7質量%左右以下)的焊接材料。磷銅焊料亦可用作銅與銅的接合劑,藉由將含有磷的銅合金粒子用於本發明的電極用膠組成物中,可利用磷對於銅氧化物的還原性,而形成耐氧化性優異、體積電阻率低的電極。進而,可獲得電極的低溫煅燒成為可能、可削減製程成本等效果。The electrode paste composition contains at least one type of copper alloy particles containing phosphorus. As a copper alloy containing phosphorus, a solder material called a phosphor bronze solder (phosphorus concentration: about 7 mass% or less) is known. Phosphorus copper solder can also be used as a bonding agent of copper and copper. By using phosphorus-containing copper alloy particles in the electrode composition for electrodes of the present invention, phosphorus can be used for the reduction of copper oxide to form oxidation resistance. An electrode with excellent properties and low volume resistivity. Further, it is possible to obtain low-temperature calcination of the electrode, and it is possible to reduce the cost of the process.

作為本發明中的含有磷的銅合金中所含有的磷的含有率,就耐氧化性與低電阻率的觀點而言,磷含有率較佳為6質量%以上、8質量%以下,更佳為6.3質量%以上、7.8質量%以下,進而更佳為6.5質量%以上、7.5質量%以下。藉由將含有磷的銅合金中所含有的磷的含有率設為8質量%以下,可達成更低的電阻率,另外,含有磷的銅合金粒子的生產性優異。另外,藉由將磷含有率設為6質量%以上,可達成更優異的耐氧化性。The content of phosphorus contained in the phosphorus-containing copper alloy of the present invention is preferably 6 mass% or more and 8 mass% or less, from the viewpoint of oxidation resistance and low electrical resistivity. It is 6.3 mass% or more and 7.8% by mass or less, and more preferably 6.5% by mass or more and 7.5% by mass or less. When the content of phosphorus contained in the phosphorus-containing copper alloy is 8% by mass or less, a lower electrical resistivity can be achieved, and the phosphorus-containing copper alloy particles are excellent in productivity. In addition, by setting the phosphorus content to 6% by mass or more, more excellent oxidation resistance can be achieved.

上述含有磷的銅合金粒子雖然是包含銅與磷的合金,但亦可進而包含其他原子。作為其他原子,例如可列舉:Ag、Mn、Sb、Si、K、Na、Li、Ba、Sr、Ca、Mg、Be、Zn、Pb、Cd、Tl、V、Sn、Al、Zr、W、Mo、Ti、Co、Ni、及Au等。The phosphorus-containing copper alloy particles are an alloy containing copper and phosphorus, but may further contain other atoms. Examples of the other atom include Ag, Mn, Sb, Si, K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, Tl, V, Sn, Al, Zr, and W. Mo, Ti, Co, Ni, and Au, and the like.

另外,關於上述含有磷的銅合金粒子中所含有的其他原子的含有率,例如可於上述含有磷的銅合金粒子中設為3質量%以下,就耐氧化性與低電阻率的觀點而言,較佳為1質量%以下。In addition, the content of the other atom contained in the phosphorus-containing copper alloy particles can be, for example, 3% by mass or less based on the phosphorus-containing copper alloy particles, from the viewpoint of oxidation resistance and low electrical resistivity. It is preferably 1% by mass or less.

另外,於本發明中,上述含有磷的銅合金粒子可單獨使用1種、或者將2種以上組合使用。Further, in the present invention, the phosphorus-containing copper alloy particles may be used singly or in combination of two or more kinds.

上述含有磷的銅合金粒子的粒徑並無特別限制,作為累計的重量為50%時的粒徑(以下,有時略記為「D50%」),較佳為0.4μm~10μm,更佳為1μm~7μm。藉由將該粒徑設為0.4μm以上,耐氧化性更有效地提昇。另外,藉由將該粒徑設為10μm以下,電極中的含有磷的銅合金粒子彼此、或者與後述的含有錫的粒子的接觸面積變大,電阻率更有效地下降。再者,含有磷的銅合金粒子的粒徑是藉由Microtrac粒度分布測定裝置(日機裝公司製造,MT3300型)來測定。The particle diameter of the phosphorus-containing copper alloy particles is not particularly limited, and the particle diameter when the cumulative weight is 50% (hereinafter sometimes abbreviated as "D50%") is preferably 0.4 μm to 10 μm, more preferably 1μm~7μm. By setting the particle diameter to 0.4 μm or more, the oxidation resistance is more effectively improved. In addition, when the particle diameter is 10 μm or less, the contact area of the phosphorus-containing copper alloy particles in the electrode or the tin-containing particles to be described later increases, and the specific resistance decreases more effectively. Further, the particle diameter of the phosphorus-containing copper alloy particles was measured by a Microtrac particle size distribution measuring apparatus (manufactured by Nikkiso Co., Ltd., model MT3300).

另外,上述含有磷的銅合金粒子的形狀並無特別限制,可為大致球狀、扁平狀、塊狀、板狀、及鱗片狀等的任一種,就耐氧化性與低電阻率的觀點而言,較佳為大致球狀、扁平狀、或板狀。Further, the shape of the phosphorus-containing copper alloy particles is not particularly limited, and may be any of a substantially spherical shape, a flat shape, a block shape, a plate shape, and a scaly shape, and is resistant to oxidation and low electrical resistivity. In other words, it is preferably substantially spherical, flat, or plate-shaped.

電極用膠組成物中的含有磷的銅合金粒子的含有率並無特別限制。就低電阻率的觀點而言,較佳為於電極用膠組成物中為20質量%以上、85質量%以下,更佳為25質量%以上、80質量%以下,進而更佳為30質量%以上、75質量%以下。The content ratio of the phosphorus-containing copper alloy particles in the electrode composition is not particularly limited. From the viewpoint of the low resistivity, it is preferably 20% by mass or more and 85% by mass or less, more preferably 25% by mass or more, 80% by mass or less, and still more preferably 30% by mass. The above is 75 mass% or less.

含有磷的銅合金可藉由通常所使用的方法來製造。另外,含有磷的銅合金粒子可使用以成為所期望的磷含有率的方式製備而成的含有磷的銅合金,並利用製備金屬粉末的通常的方法來製備,例如可利用水霧化法並藉由通常的方法來製造。再者,水霧化法的詳細情況可參照金屬便覽(丸善(股份)出版事業部)等的記載。The copper alloy containing phosphorus can be produced by a method generally used. Further, the phosphorus-containing copper alloy particles can be prepared by using a phosphorus-containing copper alloy prepared to have a desired phosphorus content, and can be produced by a usual method for preparing a metal powder, for example, by a water atomization method. It is manufactured by the usual method. In addition, the details of the water atomization method can be referred to the description of the Metal Handbook (Maruzen (Stock) Publishing Division).

具體而言,使含有磷的銅合金溶解,藉由噴嘴噴霧將其粉末化後,對所獲得的粉末進行乾燥、分級,藉此可製造所期望的含有磷的銅合金粒子。另外,可藉由適宜選擇分級條件來製造具有所期望的粒徑的含有磷的銅合金粒子。Specifically, the phosphorus-containing copper alloy is dissolved, powdered by nozzle spraying, and the obtained powder is dried and classified, whereby a desired phosphorus-containing copper alloy particle can be produced. Further, phosphorus-containing copper alloy particles having a desired particle diameter can be produced by appropriately selecting classification conditions.

(含有錫的粒子)(particles containing tin)

本發明的電極用膠組成物包含至少1種含有錫的粒子。由於除含有磷的銅合金粒子以外,包含含有錫的粒子,於後述的煅燒步驟中,可形成電阻率低的電極。The electrode composition for an electrode of the present invention contains at least one type of tin-containing particles. Since the particles containing tin are contained in addition to the copper alloy particles containing phosphorus, an electrode having a low specific resistance can be formed in the calcination step to be described later.

該情況例如可如下般考慮。含有磷的銅合金粒子與含有錫的粒子於煅燒步驟中相互進行反應,而形成包含Cu-Sn合金相與Sn-P-O玻璃相的電極。此處,一般認為上述Cu-Sn合金相於電極內形成緻密的塊體,該塊體作為導電層而發揮功能,藉此可形成電阻率低的電極。This case can be considered as follows, for example. The phosphorus-containing copper alloy particles and the tin-containing particles react with each other in the calcination step to form an electrode including a Cu-Sn alloy phase and a Sn-P-O glass phase. Here, it is considered that the Cu-Sn alloy phase forms a dense block in the electrode, and the block functions as a conductive layer, whereby an electrode having a low specific resistance can be formed.

再者,此處所述的緻密的塊體是指塊狀的Cu-Sn合金相相互緊密地接觸,形成三維地連續著的構造。Further, the dense block described herein means that the bulk Cu-Sn alloy phases are in close contact with each other to form a three-dimensionally continuous structure.

另外,當使用本發明的電極用膠組成物於包含矽的基板(以下,亦簡稱為「矽基板」)上形成電極時,可形成對 於矽基板的密接性高的電極,進而可達成電極與矽基板的良好的歐姆接觸。Further, when the electrode composition for an electrode of the present invention is used to form an electrode on a substrate including ruthenium (hereinafter, simply referred to as a "ruthenium substrate"), a pair can be formed. The electrode having high adhesion to the substrate can achieve good ohmic contact between the electrode and the germanium substrate.

該情況例如可如下般考慮。含有磷的銅合金粒子與含有錫的粒子於煅燒步驟中相互進行反應,而形成包含Cu-Sn合金相與Sn-P-O玻璃相的電極。由於上述Cu-Sn合金相為緻密的塊體,因此該Sn-P-O玻璃相形成在Cu-Sn合金相與矽基板之間。藉此,可認為Cu-Sn合金相對矽基板的密接性提昇。另外,可認為由於Sn-P-O玻璃相作為用以防止銅與矽的相互擴散的阻隔層而發揮功能,可達成經煅燒而形成的電極與矽基板的良好的歐姆接觸。即,一般認為可抑制使包含銅的電極與矽直接接觸並進行加熱時所形成的反應相(Cu3 Si)的形成,不使半導體性能(例如,pn接合特性)劣化而保持與矽基板的密接性,並且表現出良好的歐姆接觸。This case can be considered as follows, for example. The phosphorus-containing copper alloy particles and the tin-containing particles react with each other in the calcination step to form an electrode including a Cu-Sn alloy phase and a Sn-PO glass phase. Since the Cu-Sn alloy phase is a dense block, the Sn-PO glass phase is formed between the Cu-Sn alloy phase and the tantalum substrate. Thereby, it is considered that the adhesion of the Cu-Sn alloy to the ruthenium substrate is improved. Further, it is considered that the Sn-PO glass phase functions as a barrier layer for preventing interdiffusion of copper and tantalum, and good ohmic contact between the electrode formed by firing and the tantalum substrate can be achieved. In other words, it is considered that formation of a reaction phase (Cu 3 Si) formed when the electrode containing copper is directly contacted with ruthenium and heated, and the semiconductor performance (for example, pn junction characteristics) is not deteriorated and the ruthenium substrate is maintained. Adhesive and exhibits good ohmic contact.

只要是使用本發明的電極用膠組成物於包含矽的基板上形成電極的情況,則此種效果通常會顯現,包含矽的基板的種類並無特別限制。作為包含矽的基板,例如可列舉太陽電池形成用的矽基板、太陽電池以外的半導體元件的製造中所使用的矽基板等。When the electrode composition is formed on the substrate containing ruthenium using the electrode composition for an electrode of the present invention, such an effect is usually exhibited, and the type of the substrate including ruthenium is not particularly limited. Examples of the substrate including ruthenium include a ruthenium substrate for forming a solar cell, a ruthenium substrate used for the production of a semiconductor element other than a solar cell, and the like.

即,於本發明中,藉由在電極用膠組成物中組合含有磷的銅合金粒子與含有錫的粒子,首先,利用含有磷的銅合金粒子中的磷原子對於銅氧化物的還原性,形成耐氧化性優異、體積電阻率低的電極。其次,藉由含有磷的銅合金粒子與含有錫的粒子的反應,於將體積電阻率保持得低 的狀態下形成包含Cu-Sn合金相的導電層與Sn-P-O玻璃相。而且,可認為由於例如Sn-P-O玻璃相作為用以防止銅與矽相互擴散的阻隔層而發揮功能,可於煅燒步驟中同時實現如下2種特徵性的機能:抑制電極與矽基板之間形成反應物相、形成與銅電極的良好的歐姆接觸。In the present invention, by combining the copper alloy particles containing phosphorus and the particles containing tin in the electrode composition for an electrode, first, the reduction of the copper oxide by the phosphorus atom in the copper alloy particles containing phosphorus is utilized. An electrode having excellent oxidation resistance and a low volume resistivity is formed. Secondly, the volume resistivity is kept low by the reaction of the phosphorus-containing copper alloy particles with the tin-containing particles. A conductive layer containing a Cu-Sn alloy phase and a Sn-P-O glass phase were formed in a state of being formed. Further, it is considered that, for example, the Sn-PO glass phase functions as a barrier layer for preventing mutual diffusion of copper and yttrium, and the following two characteristic functions can be simultaneously realized in the calcination step: formation between the suppression electrode and the ruthenium substrate The reactant phase forms a good ohmic contact with the copper electrode.

作為上述含有錫的粒子,只要是包含錫的粒子,則並無特別限制。其中,較佳為選自錫粒子及錫合金粒子中的至少1種,更佳為選自錫粒子及錫含有率為1質量%以上的錫合金粒子中的至少1種。The tin-containing particles are not particularly limited as long as they are tin-containing particles. In particular, it is preferably at least one selected from the group consisting of tin particles and tin alloy particles, and more preferably at least one selected from the group consisting of tin particles and tin alloy particles having a tin content of 1% by mass or more.

錫粒子中的錫的純度並無特別限制。例如錫粒子的純度可設為95質量%以上,較佳為97質量%以上,更佳為99質量%以上。The purity of tin in the tin particles is not particularly limited. For example, the purity of the tin particles can be 95% by mass or more, preferably 97% by mass or more, and more preferably 99% by mass or more.

另外,錫合金粒子只要是包含錫的合金粒子,則合金的種類並無特別限制。其中,就錫合金粒子的熔點、及與含有磷的銅合金粒子的反應性的觀點而言,較佳為錫的含有率為1質量%以上的錫合金粒子,更佳為錫的含有率為3質量%以上的錫合金粒子,進而更佳為錫的含有率為5質量%以上的錫合金粒子,特佳為錫的含有率為10質量%以上的錫合金粒子。Further, the tin alloy particles are not particularly limited as long as they are alloy particles containing tin. In view of the melting point of the tin alloy particles and the reactivity with the copper alloy particles containing phosphorus, tin alloy particles having a tin content of 1% by mass or more are preferable, and tin content is more preferable. The tin alloy particles of 3% by mass or more, more preferably tin alloy particles having a tin content of 5% by mass or more, particularly preferably tin alloy particles having a tin content of 10% by mass or more.

作為錫合金粒子,例如可列舉:Sn-Ag系合金、Sn-Cu系合金、Sn-Ag-Cu系合金、Sn-Ag-Sb系合金、Sn-Ag-Sb-Zn系合金、Sn-Ag-Cu-Zn系合金、Sn-Ag-Cu-Sb系合金、Sn-Ag-Bi系合金、Sn-Bi系合金、Sn-Ag-Cu-Bi系合金、Sn-Ag-In-Bi系合金、Sn-Sb系合金、Sn-Bi-Cu系合金、 Sn-Bi-Cu-Zn系合金、Sn-Bi-Zn系合金、Sn-Bi-Sb-Zn系合金、Sn-Zn系合金、Sn-In系合金、Sn-Zn-In系合金、Sn-Pb系合金等。Examples of the tin alloy particles include a Sn-Ag alloy, a Sn-Cu alloy, a Sn-Ag-Cu alloy, a Sn-Ag-Sb alloy, a Sn-Ag-Sb-Zn alloy, and a Sn-Ag. -Cu-Zn alloy, Sn-Ag-Cu-Sb alloy, Sn-Ag-Bi alloy, Sn-Bi alloy, Sn-Ag-Cu-Bi alloy, Sn-Ag-In-Bi alloy , Sn-Sb alloy, Sn-Bi-Cu alloy, Sn-Bi-Cu-Zn alloy, Sn-Bi-Zn alloy, Sn-Bi-Sb-Zn alloy, Sn-Zn alloy, Sn-In alloy, Sn-Zn-In alloy, Sn- Pb alloys, etc.

上述錫合金粒子之中,尤其Sn-3.5Ag、Sn-0.7Cu、Sn-3.2Ag-0.5Cu、Sn-4Ag-0.5Cu、Sn-2.5Ag-0.8Cu-0.5Sb、Sn-2Ag-7.5Bi、Sn-3Ag-5Bi、Sn-58Bi、Sn-3.5Ag-3In-0.5Bi、Sn-3Bi-8Zn、Sn-9Zn、Sn-52In、Sn-40Pb等錫合金粒子具有與Sn所具有的熔點(232℃)相同、或比其低的熔點。因此,該些錫合金粒子就如下的觀點而言可較佳地使用:於煅燒的初始階段熔融,藉此可覆蓋含有磷的銅合金粒子的表面,並與含有磷的銅合金粒子均勻地反應。再者,當錫合金粒子的表述為例如Sn-AX-BY-CZ時,表示於錫合金粒子中,包含A質量%的元素X,B質量%的元素Y,C質量%的元素Z。Among the above tin alloy particles, in particular, Sn-3.5Ag, Sn-0.7Cu, Sn-3.2Ag-0.5Cu, Sn-4Ag-0.5Cu, Sn-2.5Ag-0.8Cu-0.5Sb, and Sn-2Ag-7.5Bi Tin alloy particles such as Sn-3Ag-5Bi, Sn-58Bi, Sn-3.5Ag-3In-0.5Bi, Sn-3Bi-8Zn, Sn-9Zn, Sn-52In, and Sn-40Pb have a melting point with Sn ( 232 ° C) the same or lower melting point. Therefore, the tin alloy particles can be preferably used in the following manner: melting at the initial stage of calcination, thereby covering the surface of the phosphorus-containing copper alloy particles and uniformly reacting with the phosphorus-containing copper alloy particles. . In addition, when the expression of the tin alloy particles is, for example, Sn-AX-BY-CZ, it means that the tin alloy particles contain an element X of A mass%, an element Y of B mass%, and an element Z of C mass%.

於本發明中,該些含有錫的粒子可單獨使用1種,亦可將2種以上組合使用。In the present invention, the tin-containing particles may be used singly or in combination of two or more.

上述含有錫的粒子亦可進而包含不可避免地混入的其他原子。作為不可避免地混入的其他原子,例如可列舉:Ag、Mn、Sb、Si、K、Na、Li、Ba、Sr、Ca、Mg、Be、Zn、Pb、Cd、Tl、V、Al、Zr、W、Mo、Ti、Co、Ni、及Au等。The tin-containing particles may further contain other atoms that are inevitably mixed. Examples of other atoms that are inevitably mixed include Ag, Mn, Sb, Si, K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, Tl, V, Al, and Zr. , W, Mo, Ti, Co, Ni, and Au, etc.

另外,關於上述含有錫的粒子中所含有的其他原子的含有率,例如可於上述含有錫的粒子中設為3質量%以下,就熔點及與含有磷的銅合金粒子的反應性的觀點而 言,較佳為1質量%以下。In addition, the content of the other atom contained in the tin-containing particles may be, for example, 3% by mass or less based on the tin-containing particles, and the melting point and the reactivity with the phosphorus-containing copper alloy particles. In other words, it is preferably 1% by mass or less.

上述含有錫的粒子的粒徑並無特別限制,作為累計的重量為50%時的粒徑(以下,有時略記為「D50%」),較佳為0.5μm~20μm,更佳為1μm~15μm,進而更佳為5μm~15μm。藉由將該粒徑設為0.5μm以上,含有錫的粒子本身的耐氧化性提昇。另外,藉由將該粒徑設為20μm以下,與電極中的含有磷的銅合金粒子的接觸面積變大,與含有磷的銅合金粒子的反應有效地進行。The particle diameter of the tin-containing particles is not particularly limited, and the particle diameter when the cumulative weight is 50% (hereinafter sometimes abbreviated as "D50%") is preferably 0.5 μm to 20 μm, more preferably 1 μm. 15 μm, and more preferably 5 μm to 15 μm. By setting the particle diameter to 0.5 μm or more, the oxidation resistance of the tin-containing particles themselves is improved. In addition, by setting the particle diameter to 20 μm or less, the contact area with the phosphorus-containing copper alloy particles in the electrode is increased, and the reaction with the phosphorus-containing copper alloy particles is effectively performed.

另外,上述含有錫的粒子的形狀並無特別限制,可為大致球狀、扁平狀、塊狀、板狀、及鱗片狀等的任一種,就耐氧化性與就低電阻率的觀點而言,較佳為大致球狀、扁平狀、或板狀。Further, the shape of the tin-containing particles is not particularly limited, and may be any of a substantially spherical shape, a flat shape, a block shape, a plate shape, and a scaly shape, and the oxidation resistance and the low electrical resistivity are considered. Preferably, it is substantially spherical, flat, or plate-shaped.

另外,本發明的電極用膠組成物中的含有錫的粒子的含有率並無特別限制。其中,將上述含有磷的銅合金粒子與上述含有錫的粒子的總含有率設為100質量%時的含有錫的粒子的含有率較佳為5質量%以上、70質量%以下,更佳為7質量%以上、65質量%以下,進而更佳為9質量%以上、60質量%以下。Further, the content ratio of the tin-containing particles in the electrode composition for an electrode of the present invention is not particularly limited. In particular, the content of the tin-containing particles when the total content of the phosphorus-containing copper alloy particles and the tin-containing particles is 100% by mass is preferably 5% by mass or more and 70% by mass or less, more preferably 7 mass% or more and 65 mass% or less, and more preferably 9% by mass or more and 60% by mass or less.

藉由將含有錫的粒子的含有率設為5質量%以上,可使與含有磷的銅合金粒子的反應更均勻地產生。另外,藉由將含有錫的粒子設為70質量%以下,可形成體積足夠的Cu-Sn合金相,電極的體積電阻率進一步下降。By setting the content of the tin-containing particles to 5% by mass or more, the reaction with the phosphorus-containing copper alloy particles can be more uniformly produced. In addition, by setting the particles containing tin to 70% by mass or less, a Cu-Sn alloy phase having a sufficient volume can be formed, and the volume resistivity of the electrode is further lowered.

(玻璃粒子)(glass particles)

本發明的電極用膠組成物包含至少1種玻璃粒子。由 於電極用膠組成物包含玻璃粒子,於煅燒時電極部與基板的密接性提昇。另外,尤其於形成太陽電池受光面側的電極時,於煅燒時藉由所謂的煅燒貫穿(fire through)來去除作為抗反射膜的氮化矽膜,而形成電極與矽基板的歐姆接觸。The adhesive composition for an electrode of the present invention contains at least one kind of glass particles. by The electrode composition for an electrode contains glass particles, and the adhesion between the electrode portion and the substrate is improved at the time of firing. Further, particularly in the case of forming an electrode on the light-receiving surface side of the solar cell, the tantalum nitride film as an anti-reflection film is removed by so-called fire through during firing to form an ohmic contact between the electrode and the tantalum substrate.

就與基板的密接性及電極的低電阻率化的觀點而言,上述玻璃粒子較佳為包含玻璃軟化點為650℃以下、結晶化起始溫度超過650℃的玻璃的玻璃粒子。再者,上述玻璃軟化點是利用熱機械分析裝置(Thermomechanical Analyzer,TMA)並藉由通常的方法來測定,另外,上述結晶化起始溫度是利用熱重/熱差分析裝置(Thermo-Gravimetric/Differential Thermal Analyzer,TG-DTA)並藉由通常的方法來測定。The glass particles are preferably glass particles containing glass having a glass softening point of 650 ° C or less and a crystallization starting temperature of more than 650 ° C from the viewpoint of adhesion to the substrate and low resistivity of the electrode. Further, the glass softening point is measured by a usual method using a thermomechanical analyzer (TMA), and the crystallization initiation temperature is a thermogravimetric/thermal differential analysis device (Thermo-Gravimetric/ Differential Thermal Analyzer (TG-DTA) was measured by a usual method.

當將本發明的電極用膠組成物用作太陽電池受光面側的電極時,上述玻璃粒子只要是如下的玻璃粒子,則可無特別限制地使用該技術領域中通常使用的玻璃粒子:所述玻璃粒子於電極形成溫度下軟化、熔融,將所接觸的氮化矽膜氧化,並混入經氧化的二氧化矽,藉此可去除抗反射膜。When the electrode composition for an electrode of the present invention is used as an electrode on the light-receiving surface side of the solar cell, the glass particles are not particularly limited, and glass particles generally used in the technical field can be used without any limitation: The glass particles are softened and melted at the electrode formation temperature, and the contacted tantalum nitride film is oxidized and mixed with the oxidized cerium oxide, whereby the antireflection film can be removed.

通常,電極用膠組成物中所含有的玻璃粒子包含含有鉛的玻璃,其原因在於可高效地混入二氧化矽。作為此種含有鉛的玻璃,例如可列舉日本專利第3050064號公報等中所記載的玻璃,於本發明中亦可較佳地使用該些玻璃。Usually, the glass particles contained in the electrode composition for electrodes contain glass containing lead because the cerium oxide can be efficiently mixed. As such a glass containing lead, for example, the glass described in Japanese Patent No. 3050064 and the like can be used, and the glass can be preferably used in the present invention.

另外,於本發明中,若考慮對於環境的影響,則較佳 為使用實質上不含鉛的無鉛玻璃。作為無鉛玻璃,例如可列舉日本專利特開2006-313744號公報的段落號0024~段落號0025中所記載的無鉛玻璃、或日本專利特開2009-188281號公報等中所記載的無鉛玻璃,自該些無鉛玻璃中適宜選擇來應用於本發明亦較佳。Further, in the present invention, it is preferable to consider the influence on the environment. To use lead-free glass that is substantially free of lead. For example, the lead-free glass described in paragraphs 0024 to 0025 of JP-A-2006-313744, or the lead-free glass described in JP-A-2009-188281, etc., is used as the lead-free glass. It is also preferred that the lead-free glasses are suitably selected for use in the present invention.

另外,當將本發明的電極用膠組成物用作太陽電池受光面側的電極以外的電極,例如背面取出電極、反向接觸型太陽電池元件中的通孔電極及背面電極時,只要是包含玻璃軟化點為650℃以下、結晶化起始溫度超過650℃的玻璃的玻璃粒子,則可在使用時不包含如上述鉛般的於煅燒貫穿中所需的成分。In addition, when the electrode composition for an electrode of the present invention is used as an electrode other than the electrode on the light-receiving surface side of the solar cell, for example, a back-receiving electrode, a via-hole electrode and a back electrode in a reverse-contact type solar cell element, A glass particle of glass having a glass softening point of 650 ° C or less and a crystallization initiation temperature of more than 650 ° C may not contain a component required for the calcination penetration as in the above-mentioned lead at the time of use.

作為構成本發明的電極用膠組成物中所使用的玻璃粒子的玻璃成分,可列舉:二氧化矽(SiO2 )、氧化磷(P2 O5 )、氧化鋁(Al2 O3 )、氧化硼(B2 O3 )、氧化釩(V2 O5 )、氧化鉀(K2 O)、氧化鉍(Bi2 O3 )、氧化鈉(Na2 O)、氧化鋰(Li2 O)、氧化鋇(BaO)、氧化鍶(SrO)、氧化鈣(CaO)、氧化鎂(MgO)、氧化鈹(BeO)、氧化鋅(ZnO)、氧化鉛(PbO)、氧化鎘(CdO)、氧化錫(SnO)、氧化鋯(ZrO2 )、氧化鎢(WO3 )、氧化鉬(MoO3 )、氧化鑭(La2 O3 )、氧化鈮(Nb2 O5 )、氧化鉭(Ta2 O5 )、氧化釔(Y2 O3 )、氧化鈦(TiO2 )、氧化鍺(GeO2 )、氧化碲(TeO2 )、氧化鑥(Lu2 O3 )、氧化銻(Sb2 O3 )、氧化銅(CuO)、氧化鐵(FeO)、氧化銀(AgO)及氧化錳(MnO)。Examples of the glass component constituting the glass particles used in the electrode composition for an electrode of the present invention include cerium oxide (SiO 2 ), phosphorus oxide (P 2 O 5 ), alumina (Al 2 O 3 ), and oxidation. Boron (B 2 O 3 ), vanadium oxide (V 2 O 5 ), potassium oxide (K 2 O), bismuth oxide (Bi 2 O 3 ), sodium oxide (Na 2 O), lithium oxide (Li 2 O), BaO, BaO(R), CaO, MgO, BeO, ZnO, PbO, CdO, Tin Oxide (SnO), zirconia (ZrO 2 ), tungsten oxide (WO 3 ), molybdenum oxide (MoO 3 ), lanthanum oxide (La 2 O 3 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), yttrium oxide (Y 2 O 3 ), titanium oxide (TiO 2 ), yttrium oxide (GeO 2 ), yttrium oxide (TeO 2 ), lanthanum oxide (Lu 2 O 3 ), yttrium oxide (Sb 2 O 3 ), Copper oxide (CuO), iron oxide (FeO), silver oxide (AgO), and manganese oxide (MnO).

其中,作為玻璃成分,較佳為使用選自由SiO2 、P2 O5 、 Al2 O3 、B2 O3 、V2 O5 、Bi2 O3 、ZnO、及PbO所組成的組群中的至少1種,更佳為使用選自由SiO2 、PbO、B2 O3 、Bi2 O3 及Al2 O3 所組成的組群中的至少1種。於此種玻璃粒子的情況下,軟化點更有效地降低。進而,與含有磷的銅合金粒子及視需要而包含的銀粒子的潤濕性提昇,因此煅燒過程中的上述粒子間的燒結進行,可形成電阻率更低的電極。Among them, as the glass component, it is preferred to use a group selected from the group consisting of SiO 2 , P 2 O 5 , Al 2 O 3 , B 2 O 3 , V 2 O 5 , Bi 2 O 3 , ZnO, and PbO. At least one of them is more preferably one selected from the group consisting of SiO 2 , PbO, B 2 O 3 , Bi 2 O 3 and Al 2 O 3 . In the case of such glass particles, the softening point is more effectively reduced. Further, since the wettability of the phosphorus-containing copper alloy particles and, if necessary, the silver particles is improved, sintering between the particles during the firing is progressed, and an electrode having a lower specific resistance can be formed.

另一方面,就低接觸電阻率的觀點而言,較佳為包含五氧化二磷的玻璃粒子(磷酸玻璃,P2 O5 系玻璃粒子),更佳為除五氧化二磷以外進而包含五氧化二釩的玻璃粒子(P2 O5 -V2 O5 系玻璃粒子)。藉由進而包含五氧化二釩,耐氧化性進一步提昇、電極的電阻率進一步下降。可認為其原因在於:藉由進而包含例如五氧化二釩而導致玻璃的軟化點下降。當使用五氧化二磷-五氧化二釩系玻璃粒子(P2 O5 -V2 O5 系玻璃粒子)時,作為五氧化二釩的含有率,較佳為於玻璃的總質量中為1質量%以上,更佳為1質量%~70質量%。On the other hand, from the viewpoint of low contact resistivity, glass particles (phosphoric acid glass, P 2 O 5 -based glass particles) containing phosphorus pentoxide are preferable, and it is more preferable to contain five in addition to phosphorus pentoxide. Glass particles of vanadium oxide (P 2 O 5 -V 2 O 5 -based glass particles). Further, by further including vanadium pentoxide, the oxidation resistance is further improved and the electrical resistivity of the electrode is further lowered. The reason for this is considered to be that the softening point of the glass is lowered by further containing, for example, vanadium pentoxide. When phosphorus pentoxide-vanadium pentoxide-based glass particles (P 2 O 5 -V 2 O 5 -based glass particles) are used, the content of vanadium pentoxide is preferably 1 in the total mass of the glass. The mass% or more is more preferably from 1% by mass to 70% by mass.

本發明中的玻璃粒子的粒徑並無特別限制,累計的重量為50%時的粒徑(D50%)較佳為0.5μm以上、10μm以下,更佳為0.8μm以上、8μm以下。藉由將該粒徑設為0.5μm以上,製作電極用膠組成物時的作業性提昇。另外,藉由將該粒徑設為10μm以下,玻璃粒子均勻地分散於電極用膠組成物中,於煅燒步驟中可高效地產生煅燒貫穿,進而與矽基板的密接性亦提昇。The particle diameter of the glass particles in the present invention is not particularly limited, and the particle diameter (D50%) when the cumulative weight is 50% is preferably 0.5 μm or more and 10 μm or less, more preferably 0.8 μm or more and 8 μm or less. By setting the particle diameter to 0.5 μm or more, the workability in producing the electrode composition for an electrode is improved. In addition, by setting the particle diameter to 10 μm or less, the glass particles are uniformly dispersed in the electrode composition for an electrode, and the calcination penetration can be efficiently performed in the calcination step, and the adhesion to the tantalum substrate is also improved.

另外,上述玻璃粒子的形狀並無特別限制,可為大致 球狀、扁平狀、塊狀、板狀、及鱗片狀等的任一種,就耐氧化性與低電阻率的觀點而言,較佳為大致球狀、扁平狀、或板狀。Further, the shape of the glass particles is not particularly limited and may be approximate Any of a spherical shape, a flat shape, a block shape, a plate shape, and a scaly shape is preferably a substantially spherical shape, a flat shape, or a plate shape from the viewpoint of oxidation resistance and low electrical resistivity.

作為上述玻璃粒子的含有率,較佳為於電極用膠組成物的總質量中為0.1質量%~10質量%,更佳為0.5質量%~8質量%,進而更佳為1質量%~8質量%。藉由以該範圍的含有率包含玻璃粒子,可更有效地達成耐氧化性、電極的低電阻率化、及低接觸電阻化,另外,可促進上述含有磷的銅合金粒子與上述含有錫的粒子的反應。The content of the glass particles is preferably 0.1% by mass to 10% by mass, more preferably 0.5% by mass to 8% by mass, even more preferably 1% by mass to 8% by mass based on the total mass of the electrode composition for an electrode. quality%. By including the glass particles in the content ratio in the range, oxidation resistance, low resistivity of the electrode, and low contact resistance can be more effectively achieved, and the phosphorus-containing copper alloy particles and the tin-containing particles can be promoted. The reaction of the particles.

(溶劑及樹脂)(solvent and resin)

本發明的電極用膠組成物包含至少1種溶劑與至少1種樹脂。藉此,可將本發明的電極用膠組成物的液體物性(例如黏度、表面張力等)調整成如下的液體物性,即對應於賦予至矽基板等上時的賦予方法所需要的液體物性。The adhesive composition for an electrode of the present invention contains at least one solvent and at least one resin. By this, the liquid physical properties (for example, viscosity, surface tension, and the like) of the electrode composition for an electrode of the present invention can be adjusted to liquid physical properties, that is, liquid physical properties required for the method of imparting the composition to the ruthenium substrate or the like.

上述溶劑並無特別限制。例如可列舉:己烷、環己烷、甲苯等烴系溶劑;二氯乙烯、二氯乙烷、二氯苯等氯化烴系溶劑;四氫呋喃、呋喃、四氫吡喃、吡喃、二噁烷、1,3-二氧雜環戊烷、三噁烷等環狀醚系溶劑;N,N-二甲基甲醯胺、N,N-二甲基乙醯胺等醯胺系溶劑;二甲基亞碸、二乙基亞碸等亞碸系溶劑;丙酮、甲基乙基酮、二乙基酮、環己酮等酮系溶劑;乙醇、2-丙醇、1-丁醇、二丙酮醇等醇系化合物;2,2,4-三甲基-1,3-戊二醇單乙酸酯、2,2,4-三甲基-1,3-戊二醇單丙酸酯、2,2,4-三甲基-1,3-戊二醇單丁酸酯、2,2,4-三甲基-1,3-戊二醇單異丁酸酯、2,2,4-三乙基-1,3- 戊二醇單乙酸酯、乙二醇單丁醚乙酸酯、二乙二醇單丁醚乙酸酯等多元醇的酯系溶劑;丁基溶纖劑、二乙二醇單丁醚、二乙二醇二乙醚等多元醇的醚系溶劑;α-萜品烯、α-萜品醇、月桂油烯、別羅勒烯、檸檬烯、雙戊烯、α-蒎烯、β-蒎烯、松脂醇、香旱芹酮、羅勒烯、水芹烯等萜烯系溶劑、以及該些的混合物。The above solvent is not particularly limited. For example, a hydrocarbon solvent such as hexane, cyclohexane or toluene; a chlorinated hydrocarbon solvent such as dichloroethylene, dichloroethane or dichlorobenzene; tetrahydrofuran, furan, tetrahydropyran, pyran and dioxins; a cyclic ether solvent such as an alkane, a 1,3-dioxolane or a trioxane; a guanamine solvent such as N,N-dimethylformamide or N,N-dimethylacetamide; An anthraquinone solvent such as dimethyl hydrazine or diethyl hydrazine; a ketone solvent such as acetone, methyl ethyl ketone, diethyl ketone or cyclohexanone; ethanol, 2-propanol, 1-butanol, An alcohol compound such as diacetone alcohol; 2,2,4-trimethyl-1,3-pentanediol monoacetate, 2,2,4-trimethyl-1,3-pentanediol monopropionic acid Ester, 2,2,4-trimethyl-1,3-pentanediol monobutyrate, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate, 2,2 ,4-triethyl-1,3- An ester solvent of a polyhydric alcohol such as pentanediol monoacetate, ethylene glycol monobutyl ether acetate or diethylene glycol monobutyl ether acetate; butyl cellosolve, diethylene glycol monobutyl ether, diethyl An ether solvent of a polyol such as diol diethyl ether; α-terpinene, α-terpineol, laurylene, allo-ocimene, limonene, dipentene, α-pinene, β-pinene, rosinol a terpene solvent such as sulphonone, ocene, and celery, and a mixture thereof.

作為本發明中的上述溶劑,就將電極用膠組成物形成於矽基板上時的塗佈性、印刷性的觀點而言,較佳為選自多元醇的酯系溶劑、萜烯系溶劑、及多元醇的醚系溶劑中的至少1種,更佳為選自多元醇的酯系溶劑及萜烯系溶劑中的至少1種。The solvent of the present invention is preferably an ester solvent selected from a polyol, a terpene solvent, or the like, in view of applicability and printability when the electrode composition for an electrode is formed on a ruthenium substrate. At least one of the ether solvent of the polyhydric alcohol is more preferably at least one selected from the group consisting of an ester solvent of a polyhydric alcohol and a terpene solvent.

另外,於本發明中,上述溶劑可單獨使用1種,亦可將2種以上組合使用。Further, in the present invention, the solvent may be used singly or in combination of two or more.

另外,作為上述樹脂,只要是可藉由煅燒而熱分解的樹脂,則可無特別限制地使用該技術領域中通常所使用的樹脂。具體而言,例如可列舉:甲基纖維素、乙基纖維素、羧甲基纖維素、硝基纖維素等纖維素系樹脂;聚乙烯醇類;聚乙烯吡咯啶酮類;丙烯酸樹脂;乙酸乙烯酯-丙烯酸酯共聚物;聚乙烯丁醛等丁醛樹脂;苯酚改質醇酸樹脂、蓖麻油脂肪酸改質醇酸樹脂之類的醇酸樹脂;環氧樹脂;酚樹脂;松香酯樹脂等。In addition, as the resin, a resin which can be thermally decomposed by calcination can be used, and a resin which is generally used in the technical field can be used without particular limitation. Specific examples thereof include cellulose resins such as methyl cellulose, ethyl cellulose, carboxymethyl cellulose, and nitrocellulose; polyvinyl alcohols; polyvinylpyrrolidone; acrylic resins; and acetic acid. Vinyl ester-acrylate copolymer; butyral resin such as polyvinyl butyral; alkyd resin such as phenol modified alkyd resin, castor oil fatty acid modified alkyd resin; epoxy resin; phenol resin; rosin ester resin, etc. .

作為本發明中的上述樹脂,就煅燒時的消失性的觀點而言,較佳為選自纖維素系樹脂、及丙烯酸樹脂中的至少1種。The resin in the present invention is preferably at least one selected from the group consisting of a cellulose resin and an acrylic resin from the viewpoint of the disappearance at the time of firing.

另外,於本發明中,上述樹脂可單獨使用1種,亦可將2種以上組合使用。Further, in the present invention, the above resins may be used alone or in combination of two or more.

另外,本發明中的上述樹脂的重量平均分子量並無特別限制。其中,重量平均分子量較佳為5000以上、500000以下,更佳為10000以上、300000以下。若上述樹脂的重量平均分子量為5000以上,則可抑制電極用膠組成物的黏度增加。可認為其原因在於:使例如含有磷的銅合金粒子及含有錫的粒子吸附時的立體的排斥作用不足,粒子彼此凝聚。另一方面,若樹脂的重量平均分子量為500000以下,則樹脂彼此於溶劑中凝聚的情況得到抑制,並可抑制電極用膠組成物的黏度增加。Further, the weight average molecular weight of the above resin in the present invention is not particularly limited. Among them, the weight average molecular weight is preferably 5,000 or more and 500,000 or less, more preferably 10,000 or more and 300,000 or less. When the weight average molecular weight of the above resin is 5,000 or more, the viscosity of the electrode composition for an electrode can be suppressed from increasing. This is considered to be because the steric repulsion of the copper alloy particles containing phosphorus and the particles containing tin is insufficient, and the particles are agglomerated. On the other hand, when the weight average molecular weight of the resin is 500,000 or less, the resin is agglomerated in a solvent, and the viscosity of the electrode composition for an electrode can be suppressed from increasing.

另外,除上述以外,若樹脂的重量平均分子量為500000以下,則樹脂的燃燒溫度變高的情況得到抑制,對電極用膠組成物進行煅燒時樹脂未完全地燃燒而作為異物殘存的情況得到抑制,能夠以更低的電阻構成電極。In addition, when the weight average molecular weight of the resin is 500,000 or less, the burning temperature of the resin is suppressed, and when the rubber composition for electrode is calcined, the resin is not completely burned and is suppressed as a foreign matter. The electrode can be formed with a lower resistance.

於本發明的電極用膠組成物中,上述溶劑與上述樹脂的含有率可對應於所期望的液體物性與所使用的溶劑及樹脂的種類而適宜選擇。例如,於電極用膠組成物的總質量中,溶劑與樹脂的總含有率較佳為3質量%以上、29.9質量%以下,更佳為5質量%以上、25質量%以下,進而更佳為7質量%以上、20質量%以下。In the electrode composition for an electrode of the present invention, the content of the solvent and the resin may be appropriately selected in accordance with the desired liquid physical properties and the type of the solvent and the resin to be used. For example, in the total mass of the electrode composition for an electrode, the total content of the solvent and the resin is preferably 3% by mass or more and 29.9% by mass or less, more preferably 5% by mass or more and 25% by mass or less, and still more preferably 7 mass% or more and 20 mass% or less.

藉由溶劑與樹脂的總含有率為上述範圍內,將電極用膠組成物賦予至矽基板上時的賦予適應性變得良好,可更容易地形成具有所期望的寬度及高度的電極。When the total content of the solvent and the resin is within the above range, the imparting property when the electrode composition for an electrode is applied to the ruthenium substrate is improved, and an electrode having a desired width and height can be formed more easily.

進而,於本發明的電極用膠組成物中,就耐氧化性與電極的低電阻率的觀點而言,較佳為含有磷的銅合金粒子及含有錫的粒子的總含有率為70質量%以上、94質量%以下,玻璃粒子的含有率為0.1質量%以上、10質量%以下,溶劑及樹脂的總含有率為3質量%以上、29.9質量%以下,更佳為含有磷的銅合金粒子及含有錫的粒子的總含有率為74質量%以上、88質量%以下,玻璃粒子的含有率為0.5質量%以上、8質量%以下,溶劑及樹脂的總含有率為7質量%以上、20質量%以下,進而更佳為含有磷的銅合金粒子及含有錫的粒子的總含有率為74質量%以上、88質量%以下,玻璃粒子的含有率為1質量%以上、8質量%以下,溶劑及樹脂的總含有率為7質量%以上、20質量%以下。Further, in the electrode composition for an electrode of the present invention, from the viewpoint of oxidation resistance and low electrical resistivity of the electrode, the total content of the copper alloy particles containing phosphorus and the particles containing tin is preferably 70% by mass. The content of the glass particles is 0.1% by mass or more and 10% by mass or less, and the total content of the solvent and the resin is 3% by mass or more and 29.9% by mass or less, and more preferably phosphorus-containing copper alloy particles. The total content of the tin-containing particles is 74% by mass or more and 88% by mass or less, and the content of the glass particles is 0.5% by mass or more and 8% by mass or less, and the total content of the solvent and the resin is 7% by mass or more. It is more preferable that the total content of the copper alloy particles containing phosphorus and the particles containing tin is 74% by mass or more and 88% by mass or less, and the content of the glass particles is 1% by mass or more and 8% by mass or less. The total content of the solvent and the resin is 7% by mass or more and 20% by mass or less.

(銀粒子)(silver particles)

本發明的電極用膠組成物較佳為進而包含銀粒子。藉由包含銀粒子,耐氧化性進一步提昇,作為電極的電阻率進一步下降。另外,Ag粒子析出至藉由上述含有磷的銅合金粒子與上述含有錫的粒子的反應而生成的Sn-P-O系玻璃相中,藉此電極層中的Cu-Sn合金相與矽基板間的歐姆接觸性進一步提昇。進而,亦可獲得製成太陽電池模組時的焊錫連接性提昇這一效果。The electrode composition for an electrode of the present invention preferably further contains silver particles. By containing silver particles, the oxidation resistance is further improved, and the electrical resistivity as an electrode is further lowered. Further, Ag particles are precipitated in the Sn-PO-based glass phase formed by the reaction of the phosphorus-containing copper alloy particles and the tin-containing particles, whereby the Cu-Sn alloy phase and the tantalum substrate in the electrode layer are Ohmic contact is further improved. Further, the effect of improving the solder connectivity when the solar cell module is fabricated can be obtained.

構成上述銀粒子的銀亦可包含不可避免地混入的其他原子。作為不可避免地混入的其他原子,例如可列舉:Sb、Si、K、Na、Li、Ba、Sr、Ca、Mg、Be、Zn、Pb、Cd、Tl、V、Sn、Al、Zr、W、Mo、Ti、Co、Ni、及Au等。The silver constituting the above silver particles may also contain other atoms inevitably mixed. Examples of other atoms that are inevitably mixed include Sb, Si, K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, Tl, V, Sn, Al, Zr, W. , Mo, Ti, Co, Ni, and Au, etc.

另外,關於上述銀粒子中所含有的其他原子的含有率,例如可於銀粒子中設為3質量%以下,就熔點及電極的低電阻率化的觀點而言,較佳為1質量%以下。In addition, the content of the other atom contained in the silver particles is, for example, 3% by mass or less in the silver particles, and is preferably 1% by mass or less from the viewpoint of the melting point and the low resistivity of the electrode. .

本發明中的銀粒子的粒徑並無特別限制,累計的重量為50%時的粒徑(D50%)較佳為0.4μm以上、10μm以下,更佳為1μm以上、7μm以下。藉由設為0.4μm以上,耐氧化性更有效地提昇。另外,藉由該粒徑為10μm以下,電極中的銀粒子與含有磷的銅合金粒子及含有錫的粒子的接觸面積變大,電阻率更有效地下降。The particle diameter of the silver particles in the present invention is not particularly limited, and the particle diameter (D50%) when the cumulative weight is 50% is preferably 0.4 μm or more and 10 μm or less, more preferably 1 μm or more and 7 μm or less. By setting it as 0.4 micrometer or more, oxidation resistance improves more effectively. In addition, when the particle diameter is 10 μm or less, the contact area between the silver particles in the electrode and the copper alloy particles containing phosphorus and the particles containing tin becomes large, and the specific resistance is more effectively lowered.

另外,上述銀粒子的形狀並無特別限制,可為大致球狀、扁平狀、塊狀、板狀、及鱗片狀等的任一種,就耐氧化性與低電阻率的觀點而言,較佳為大致球狀、扁平狀、或板狀。Further, the shape of the silver particles is not particularly limited, and may be any of a substantially spherical shape, a flat shape, a block shape, a plate shape, and a scaly shape, and is preferably a viewpoint of oxidation resistance and low electrical resistivity. It is roughly spherical, flat, or plate-shaped.

另外,當本發明的電極用膠組成物包含銀粒子時,作為銀粒子的含有率,較佳為將上述含有磷的銅合金粒子、上述含有錫的粒子及上述銀粒子的總含有率設為100質量%時的銀粒子的含有率為0.1質量%以上、10質量%以下,更佳為0.5質量%以上、8質量%以下。In addition, when the gel composition for an electrode of the present invention contains silver particles, the content of the silver particles is preferably such that the total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is The content of the silver particles at 100% by mass is 0.1% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 8% by mass or less.

另外,於本發明的電極用膠組成物中,就耐氧化性、電極的低電阻率化、對於矽基板的塗佈性的觀點而言,電極用膠組成物較佳為含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率為70質量%以上、94質量%以下,更佳為74質量%以上、88質量%以下。藉由將含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率設為70質量% 以上,賦予電極用膠組成物時可容易地達成合適的黏度。另外,藉由將含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率設為94質量%以下,可更有效地抑制賦予電極用膠組成物時的模糊的產生。Further, in the electrode composition for an electrode of the present invention, the electrode composition for electrode is preferably a copper alloy containing phosphorus from the viewpoint of oxidation resistance, low resistivity of the electrode, and coating property to the ruthenium substrate. The total content of the particles, the tin-containing particles, and the silver particles is 70% by mass or more and 94% by mass or less, and more preferably 74% by mass or more and 88% by mass or less. The total content of the copper alloy particles containing phosphorus, the particles containing tin, and the silver particles is 70% by mass. As described above, when the adhesive composition for an electrode is provided, an appropriate viscosity can be easily achieved. In addition, when the total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is 94% by mass or less, the occurrence of blurring when the electrode composition for electrodes is applied can be more effectively suppressed.

進而,當本發明的電極用膠組成物進而包含銀粒子時,就耐氧化性與電極的低電阻率的觀點而言,較佳為含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率為70質量%以上、94質量%以下,玻璃粒子的含有率為0.1質量%以上、10質量%以下,溶劑及樹脂的總含有率為3質量%以上、29.9質量%以下,更佳為含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率為74質量%以上、88質量%以下,玻璃粒子的含有率為0.5質量%以上、8質量%以下,溶劑及樹脂的總含有率為7質量%以上、20質量%以下,進而更佳為含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率為74質量%以上、88質量%以下,玻璃粒子的含有率為1質量%以上、8質量%以下,溶劑及樹脂的總含有率為7質量%以上、20質量%以下。Further, when the electrode composition for an electrode of the present invention further contains silver particles, from the viewpoint of oxidation resistance and low electrical resistivity of the electrode, copper alloy particles containing phosphorus, particles containing tin, and silver particles are preferable. The total content is 70% by mass or more and 94% by mass or less, and the content of the glass particles is 0.1% by mass or more and 10% by mass or less, and the total content of the solvent and the resin is 3% by mass or more and 29.9% by mass or less. The total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is 74% by mass or more and 88% by mass or less, and the content of the glass particles is 0.5% by mass or more and 8% by mass or less, and the solvent and the resin are contained. The total content is 7% by mass or more and 20% by mass or less, and more preferably the total content of the copper-containing alloy particles containing phosphorus, the particles containing tin, and the silver particles is 74% by mass or more and 88% by mass or less. The content ratio is 1% by mass or more and 8% by mass or less, and the total content of the solvent and the resin is 7 mass% or more and 20 mass% or less.

(助熔劑)(flux)

電極用膠組成物可進而包含至少1種助熔劑。藉由包含助熔劑,可去除形成於含有磷的銅合金粒子的表面的氧化膜,並促進煅燒中的含有磷的銅合金粒子的還原反應。另外,煅燒中的含有錫的粒子的熔融亦進行,因此與含有磷的銅合金粒子的反應進行,結果耐氧化性進一步提昇,所形成的電極的電阻率進一步下降。進而,亦可獲得電極 材料與矽基板的密接性提昇這一效果。The electrode composition for an electrode may further comprise at least one flux. By including a flux, the oxide film formed on the surface of the phosphorus-containing copper alloy particles can be removed, and the reduction reaction of the phosphorus-containing copper alloy particles in the calcination can be promoted. Further, since the melting of the tin-containing particles in the calcination is also performed, the reaction with the phosphorus-containing copper alloy particles proceeds, and as a result, the oxidation resistance is further improved, and the resistivity of the formed electrode is further lowered. Furthermore, an electrode can also be obtained The adhesion of the material to the ruthenium substrate enhances this effect.

作為本發明中的助熔劑,只要是可去除形成於含有磷的銅合金粒子的表面的氧化膜,並促進含有錫的粒子的熔融的助熔劑,則並無特別限制。具體而言,作為較佳的助熔劑,例如可列舉脂肪酸、硼酸化合物、氟化化合物、及硼氟化化合物等。The flux in the present invention is not particularly limited as long as it is an oxide film capable of removing the oxide film formed on the surface of the phosphorus-containing copper alloy particles and promoting the melting of the tin-containing particles. Specifically, examples of preferred fluxing agents include fatty acids, boric acid compounds, fluorinated compounds, and borofluorinated compounds.

作為助熔劑,更具體而言,可列舉:月桂酸、肉豆蔻酸、棕櫚酸、硬脂酸、山梨酸、硬炔酸、丙酸、氧化硼、硼酸鉀、硼酸鈉、硼酸鋰、硼氟化鉀、硼氟化鈉、硼氟化鋰、酸性氟化鉀、酸性氟化鈉、酸性氟化鋰、氟化鉀、氟化鈉、氟化鋰等。Specific examples of the flux include lauric acid, myristic acid, palmitic acid, stearic acid, sorbic acid, hard acetylene acid, propionic acid, boron oxide, potassium borate, sodium borate, lithium borate, and boron fluoride. Potassium, sodium borofluoride, lithium borofluoride, acidic potassium fluoride, acidic sodium fluoride, acidic lithium fluoride, potassium fluoride, sodium fluoride, lithium fluoride, and the like.

其中,就電極材料煅燒時的耐熱性(助熔劑於煅燒的低溫時不揮發的特性)、及補充含有磷的銅合金粒子的耐氧化性的觀點而言,作為特佳的助熔劑,可列舉硼酸鉀及硼氟化鉀。Among them, the heat resistance at the time of firing the electrode material (the characteristic that the flux does not volatilize at the low temperature of firing) and the oxidation resistance of the copper alloy particles containing phosphorus are particularly preferable as the flux. Potassium borate and potassium borofluoride.

於本發明中,該些助熔劑分別可單獨使用1種,亦可將2種以上組合使用。In the present invention, one type of the flux may be used alone or two or more types may be used in combination.

作為本發明的電極用膠組成物包含助熔劑時的助熔劑的含有率,就使含有磷的銅合金粒子的耐氧化性有效地顯現、促進含有錫的粒子的熔融的觀點,以及於電極材料的煅燒結束時降低助熔劑被去除的部分的空隙率的觀點而言,於電極用膠組成物的總質量中,較佳為0.1質量%~5質量%,更佳為0.3質量%~4質量%,進而更佳為0.5質量%~3.5質量%,特佳為0.7質量%~3質量%,極佳為1 質量%~2.5質量%。When the content of the flux in the flux composition of the electrode composition of the present invention contains a flux, the oxidation resistance of the phosphorus-containing copper alloy particles is effectively exhibited, and the melting of the tin-containing particles is promoted, and the electrode material is used. From the viewpoint of reducing the void ratio of the portion where the flux is removed at the end of the calcination, the total mass of the electrode composition for the electrode is preferably from 0.1% by mass to 5% by mass, more preferably from 0.3% by mass to 4% by mass. %, and more preferably 0.5% by mass to 3.5% by mass, particularly preferably 0.7% by mass to 3% by mass, and preferably 1 Mass%~2.5% by mass.

(其他成分)(other ingredients)

本發明的電極用膠組成物除上述成分以外,視需要可進而包含該技術領域中通常所使用的其他成分。作為其他成分,例如可列舉:塑化劑、分散劑、界面活性劑、無機結合劑、金屬氧化物、陶瓷、有機金屬化合物等。The electrode composition for an electrode of the present invention may further contain other components generally used in the technical field, in addition to the above components. Examples of other components include a plasticizer, a dispersant, a surfactant, an inorganic binder, a metal oxide, a ceramic, and an organometallic compound.

本發明的電極用膠組成物的製造方法並無特別限制。可利用通常所使用的分散.混合方法,將上述含有磷的銅合金粒子、上述含有錫的粒子、玻璃粒子、溶劑、樹脂、及視需要而包含的銀粒子等分散.混合,藉此製造本發明的電極用膠組成物。The method for producing the electrode composition for an electrode of the present invention is not particularly limited. Can be used to disperse the usual use. In the mixing method, the phosphorus-containing copper alloy particles, the tin-containing particles, the glass particles, the solvent, the resin, and, if necessary, the silver particles are dispersed. By mixing, the adhesive composition for electrodes of the present invention is produced.

分散.混合方法並無特別限制,可自通常所使用的分散.混合方法中適宜選擇來應用。dispersion. The mixing method is not particularly limited and can be dispersed from the usual use. The mixing method is suitable for application.

<使用電極用膠組成物的電極的製造方法><Method for Producing Electrode Using Electrode Composition for Electrode>

作為使用本發明的電極用膠組成物製造電極的方法,可藉由將上述電極用膠組成物賦予至形成電極的區域,並於乾燥後進行煅燒而於所期望的區域形成電極。藉由使用上述電極用膠組成物,即便於氧的存在下(例如,大氣中)進行煅燒處理,亦可形成電阻率低的電極。As a method of producing an electrode using the electrode composition for an electrode of the present invention, the electrode composition can be applied to a region where the electrode is formed, and after drying, the electrode can be formed in a desired region by firing. By using the above-described electrode composition for an electrode, even if it is subjected to a calcination treatment in the presence of oxygen (for example, in the atmosphere), an electrode having a low specific resistance can be formed.

具體而言,例如當使用上述電極用膠組成物形成太陽電池用電極時,將電極用膠組成物以成為所期望的形狀的方式賦予至矽基板上,於乾燥後進行煅燒,藉此可將電阻率低的太陽電池電極形成為所期望的形狀。另外,藉由使用上述電極用膠組成物,即便於氧的存在下(例如,大氣 中)進行煅燒處理,亦可形成電阻率低的電極。進而,形成於矽基板上的電極與矽基板的密接性優異,可達成良好的歐姆接觸。Specifically, for example, when the electrode for a solar cell is formed using the electrode composition for an electrode, the electrode composition for the electrode is applied to the ruthenium substrate so as to have a desired shape, and after drying, it is calcined. The solar cell electrode having a low resistivity is formed into a desired shape. In addition, by using the above-mentioned electrode composition for an electrode, even in the presence of oxygen (for example, the atmosphere In the case of calcination treatment, an electrode having a low specific resistance can also be formed. Further, the electrode formed on the ruthenium substrate is excellent in adhesion to the ruthenium substrate, and good ohmic contact can be achieved.

作為賦予電極用膠組成物的方法,例如可列舉網版印刷、噴墨法、分配器法等,但就生產性的觀點而言,較佳為利用網版印刷的塗佈。Examples of the method of applying the gel composition for the electrode include screen printing, an inkjet method, a dispenser method, and the like. However, from the viewpoint of productivity, coating by screen printing is preferred.

當利用網版印刷塗佈本發明的電極用膠組成物時,電極用膠組成物較佳為具有20Pa.s~1000Pa.s的範圍的黏度。再者,電極用膠組成物的黏度是於25℃下利用布氏(Brookfield)HBT黏度計來測定。When the electrode composition for electrode of the present invention is applied by screen printing, the electrode composition for electrodes preferably has 20 Pa. s~1000Pa. The viscosity of the range of s. Further, the viscosity of the electrode composition for the electrode was measured at 25 ° C using a Brookfield HBT viscometer.

上述電極用膠組成物的賦予量可對應於要形成的電極的大小而適宜選擇。例如,作為電極用膠組成物賦予量,可設為2g/m2 ~10g/m2 ,較佳為4g/m2 ~8g/m2The amount of the above-mentioned electrode composition to be applied can be appropriately selected in accordance with the size of the electrode to be formed. For example, the amount of the adhesive composition for the electrode can be 2 g/m 2 to 10 g/m 2 , preferably 4 g/m 2 to 8 g/m 2 .

另外,作為使用本發明的電極用膠組成物形成電極時的熱處理條件(煅燒條件),可應用該技術領域中通常所使用的熱處理條件。In addition, as heat treatment conditions (calcination conditions) when the electrode is formed using the electrode composition for an electrode of the present invention, heat treatment conditions generally used in the technical field can be applied.

通常,熱處理溫度(煅燒溫度)為800℃~900℃,但當使用本發明的電極用膠組成物時,可應用更低的溫度下的熱處理條件,例如,可利用450℃~850℃的熱處理溫度來形成具有良好的特性的電極。Usually, the heat treatment temperature (calcination temperature) is 800 ° C to 900 ° C, but when the electrode composition for an electrode of the present invention is used, heat treatment conditions at a lower temperature can be applied, for example, heat treatment at 450 ° C to 850 ° C can be utilized. Temperature to form an electrode with good characteristics.

另外,熱處理時間可對應於熱處理溫度等而適宜選擇,例如可設為1秒~20秒。Further, the heat treatment time can be appropriately selected in accordance with the heat treatment temperature and the like, and can be, for example, 1 second to 20 seconds.

作為熱處理裝置,只要是可加熱至上述溫度的裝置,則可適宜採用,例如可列舉紅外線加熱爐、隧道式爐等。 紅外線加熱爐因將電能以電磁波的形式直接投入至加熱材料中,並將電能轉換成熱能,故效率高,另外,可於短時間內進行快速加熱。進而,不存在由燃燒所生成的產物,另外,其為非接觸加熱,因此可抑制所生成的電極的污染。隧道式爐因於自動地將試樣自入口連續地朝出口搬送的期間內進行煅燒,故可藉由爐體的劃分與搬送速度的控制來均勻地煅燒。就太陽電池元件的發電性能的觀點而言,較佳為利用隧道式爐來進行熱處理。The heat treatment apparatus can be suitably used as long as it can be heated to the above temperature, and examples thereof include an infrared heating furnace and a tunnel furnace. Since the infrared heating furnace directly inputs electric energy into the heating material in the form of electromagnetic waves and converts the electric energy into heat energy, the efficiency is high, and the rapid heating can be performed in a short time. Further, there is no product produced by combustion, and it is non-contact heating, so that contamination of the generated electrode can be suppressed. Since the tunnel type furnace is automatically calcined during the period in which the sample is continuously conveyed from the inlet to the outlet, it can be uniformly fired by the division of the furnace body and the control of the conveying speed. From the viewpoint of power generation performance of the solar cell element, it is preferred to carry out heat treatment using a tunnel furnace.

<太陽電池元件及其製造方法><Solar battery element and method of manufacturing the same>

本發明的太陽電池元件具有對被賦予至矽基板上的上述電極用膠組成物進行煅燒而形成的電極。藉此,可獲得具有良好的特性的太陽電池元件,且該太陽電池元件的生產性優異。The solar cell element of the present invention has an electrode formed by firing the above-mentioned electrode adhesive composition applied to a crucible substrate. Thereby, a solar cell element having good characteristics can be obtained, and the solar cell element is excellent in productivity.

再者,於本說明書中,所謂太陽電池元件,是指具有形成有pn接合的矽基板、及形成於矽基板上的電極者。另外,所謂太陽電池,是指於太陽電池元件的電極上設置有接合線(tab line),視需要經由接合線而連接多個太陽電池元件來構成,且由密封樹脂等密封的狀態者。In the present specification, the term "solar cell element" means a germanium substrate having a pn junction and an electrode formed on the germanium substrate. In addition, the solar cell is a state in which a tab line is provided on the electrode of the solar cell element, and a plurality of solar cell elements are connected via a bonding wire as needed, and sealed by a sealing resin or the like.

以下,一面參照圖式一面說明本發明的太陽電池元件的具體例,但本發明並不限定於此。Hereinafter, a specific example of the solar cell element of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

將表示具有代表性的太陽電池元件的一例的剖面圖、受光面及背面的概要示於圖1、圖2及圖3。A cross-sectional view showing an example of a typical solar cell element, a light-receiving surface, and a back surface are shown in Figs. 1, 2, and 3.

如於圖1中表示概略般,通常,太陽電池元件的半導體基板1使用單晶矽或多晶矽等。該半導體基板1中含有 硼等,而構成p型半導體。受光面側為了抑制太陽光的反射,藉由包含NaOH與IPA(異丙醇)的蝕刻溶液而形成有凹凸(亦稱為紋理,未圖示)。於其受光面側摻雜有磷等,n+ 型擴散層2以次微米級的厚度設置,並且在與p型塊體部分的邊界形成有pn接合部。進而,於受光面側,藉由電漿輔助化學氣相沈積(Plasma Enhanced Chemical Vapor Deposition,PECVD)等,以90nm左右的膜厚將氮化矽等的抗反射膜3設置於n+ 型擴散層2上。As is generally shown in FIG. 1, generally, a single crystal germanium or a polycrystalline germanium or the like is used for the semiconductor substrate 1 of the solar cell element. The semiconductor substrate 1 contains boron or the like to constitute a p-type semiconductor. In order to suppress the reflection of sunlight, the light-receiving side is formed with an unevenness (also referred to as a texture, not shown) by an etching solution containing NaOH and IPA (isopropyl alcohol). Phosphorus or the like is doped on the light-receiving side thereof, and the n + -type diffusion layer 2 is provided in a thickness of a submicron order, and a pn junction portion is formed at a boundary with the p-type bulk portion. Further, on the light-receiving surface side, an anti-reflection film 3 such as tantalum nitride is placed on the n + -type diffusion layer at a film thickness of about 90 nm by plasma enhanced chemical vapor deposition (PECVD) or the like. 2 on.

其次,對在圖2中表示概略的設置於受光面側的受光面電極4、及在圖3中表示概略的形成於背面的集電用電極5及輸出取出電極6的形成方法進行說明。Next, a method of forming the light-receiving surface electrode 4 provided on the light-receiving surface side and a current collecting electrode 5 and the output-removing electrode 6 which are formed on the back surface in FIG. 3 will be described.

受光面電極4與背面輸出取出電極6是由本發明的上述電極用膠組成物形成。另外,背面集電用電極5是由包含玻璃粉末的鋁電極膠組成物形成。作為形成受光面電極4、背面集電用電極5及背面輸出取出電極6的第一種方法,可列舉如下的方法:利用網版印刷等將上述膠組成物塗佈成所期望的圖案後,進行乾燥,然後於大氣中以450℃~85()℃左右同時進行煅燒來形成上述電極。於本發明中,藉由使用上述電極用膠組成物,即便於比較低的溫度下進行煅燒,亦可形成電阻率及接觸電阻率優異的電極。The light-receiving surface electrode 4 and the back surface output extraction electrode 6 are formed of the above-described electrode adhesive composition of the present invention. Further, the back surface collecting electrode 5 is formed of an aluminum electrode paste composition containing glass powder. As a first method of forming the light-receiving surface electrode 4, the back surface current collecting electrode 5, and the back surface output extraction electrode 6, a method of applying the above-described gel composition to a desired pattern by screen printing or the like is exemplified. The electrode is dried, and then calcined at 450 ° C to 85 ° C in the atmosphere to form the electrode. In the present invention, by using the above-described electrode composition for an electrode, it is possible to form an electrode excellent in electrical resistivity and contact resistivity even when calcination is carried out at a relatively low temperature.

此時,於受光面側,形成受光面電極4的上述電極用膠組成物中所含有的玻璃粒子與抗反射層3進行反應(煅燒貫穿),而使受光面電極4與n+ 型擴散層2電性連接(歐姆接觸)。At this time, the glass particles contained in the electrode adhesive composition forming the light-receiving surface electrode 4 on the light-receiving surface side are reacted with the anti-reflection layer 3 (baking through), and the light-receiving surface electrode 4 and the n + -type diffusion layer are formed. 2 electrical connection (ohmic contact).

於本發明中,使用上述電極用膠組成物來形成受光面電極4,藉此一面包含銅作為導電性金屬,一面抑制銅的氧化,而以良好的生產性形成低電阻率的受光面電極4。In the present invention, the light-receiving surface electrode 4 is formed by using the electrode composition for an electrode, and copper is used as a conductive metal to suppress oxidation of copper, and a low-resistivity light-receiving surface electrode 4 is formed with good productivity. .

進而,本發明中所形成的電極較佳為包含Cu-Sn合金相與Sn-P-O玻璃相來構成,更佳為Sn-P-O玻璃相配置在Cu-Sn合金相與矽基板之間(未圖示)。藉此,銅與矽基板的反應得到抑制,能夠以低電阻形成密接性優異的電極。Further, the electrode formed in the present invention preferably comprises a Cu-Sn alloy phase and a Sn-PO glass phase, and more preferably a Sn-PO glass phase is disposed between the Cu-Sn alloy phase and the ruthenium substrate (not shown). Show). Thereby, the reaction between the copper and the tantalum substrate is suppressed, and an electrode having excellent adhesion can be formed with a low electric resistance.

另外,於背面側,當進行煅燒時,形成背面集電用電極5的鋁電極膠組成物中的鋁擴散至p型矽基板1的背面,而形成p+ 型擴散層7,藉此可在p型矽基板1與背面集電用電極5、背面輸出取出電極6之間獲得歐姆接觸。Further, on the back side, when calcination is performed, aluminum in the aluminum electrode paste composition forming the back surface current collecting electrode 5 is diffused to the back surface of the p-type germanium substrate 1, thereby forming the p + -type diffusion layer 7, whereby An ohmic contact is obtained between the p-type germanium substrate 1 and the back surface current collecting electrode 5 and the back surface output extracting electrode 6.

作為形成受光面電極4、背面集電用電極5及背面輸出取出電極6的第二種方法,可列舉如下的方法:首先印刷形成背面集電用電極5的鋁電極膠組成物,乾燥後於大氣中以750℃~850℃左右進行煅燒來形成背面集電用電極5,然後將本發明的電極用膠組成物印刷於受光面側及背面側,乾燥後於大氣中以450℃~650℃左右進行煅燒來形成受光面電極4與背面輸出取出電極6。As a second method of forming the light-receiving surface electrode 4, the back surface current collecting electrode 5, and the back surface output extraction electrode 6, a method of first printing an aluminum electrode paste composition for forming the back surface current collecting electrode 5, after drying, The electrode 5 is formed by calcination at 750 ° C to 850 ° C in the atmosphere, and then the electrode composition for an electrode of the present invention is printed on the light-receiving surface side and the back surface side, and dried at 450 ° C to 650 ° C in the atmosphere. Calcination is performed right and left to form the light-receiving surface electrode 4 and the back surface output extraction electrode 6.

該方法於例如以下的情況下有效。即,當對形成背面集電用電極5的鋁電極膠進行煅燒時,若為650℃以下的煅燒溫度,則根據鋁膠的組成而存在如下情況:鋁粒子的燒結及朝向p型矽基板1的鋁擴散量不足,無法充分地形成p+ 型擴散層。於該狀態下,有時在背面的p型矽基板1與背面集電用電極5、背面輸出取出電極6之間無法充分 地形成歐姆接觸,作為太陽電池元件的發電性能下降。因此,較佳為於最適合鋁電極膠組成物的煅燒溫度(例如750℃~850℃)下形成背面集電用電極5後,印刷本發明的電極用膠組成物,乾燥後於比較低的溫度(450℃~650℃)下進行煅燒,而形成受光面電極4與背面輸出取出電極6。This method is effective, for example, in the following cases. In other words, when the aluminum electrode paste forming the back surface current collecting electrode 5 is fired, the firing temperature of 650 ° C or lower is based on the composition of the aluminum rubber: sintering of the aluminum particles and toward the p-type ruthenium substrate 1 The aluminum diffusion amount is insufficient, and the p + -type diffusion layer cannot be sufficiently formed. In this state, ohmic contact may not be sufficiently formed between the p-type germanium substrate 1 on the back surface, the back surface current collecting electrode 5, and the back surface output extracting electrode 6, and the power generation performance of the solar cell element may be lowered. Therefore, it is preferred to print the electrode composition for an electrode of the present invention after forming the electrode 5 for back surface current at a calcination temperature (for example, 750 ° C to 850 ° C) which is most suitable for the composition of the aluminum electrode paste, and to dry the paste composition at a relatively low level. Calcination is carried out at a temperature (450 ° C to 650 ° C) to form a light-receiving surface electrode 4 and a back surface output extraction electrode 6.

另外,將於作為本發明的其他形態的所謂的反向接觸型太陽電池元件中通用的背面側電極構造的概略平面圖示於圖4,將分別表示作為其他形態的反向接觸型太陽電池元件的太陽電池元件的概略構造的立體圖分別示於圖5、圖6及圖7。再者,圖5、圖6及圖7分別為圖4中的AA剖面的立體圖。In addition, a schematic plan view of a back side electrode structure which is commonly used in a so-called reverse contact type solar cell element according to another aspect of the present invention is shown in Fig. 4, and shows a reverse contact type solar cell element as another embodiment. The perspective view of the schematic structure of the solar cell element is shown in Fig. 5, Fig. 6, and Fig. 7, respectively. 5, 6 and 7 are perspective views of the AA cross section in Fig. 4, respectively.

具有圖5的立體圖所示的構造的太陽電池元件藉由雷射鑽孔或蝕刻等,而於p型矽基板1上形成有貫穿受光面側及背面側的兩面的通孔。另外,於受光面側形成有提昇光射入效率的紋理(未圖示)。進而,於受光面側形成有利用n型化擴散處理而成的n+ 型擴散層2,且於n+ 型擴散層2上形成有抗反射膜13。該些是藉由與先前的結晶Si型太陽電池元件相同的步驟來製造。The solar cell element having the structure shown in the perspective view of FIG. 5 is formed with a through hole penetrating both sides of the light receiving surface side and the back surface side on the p-type germanium substrate 1 by laser drilling or etching. Further, a texture (not shown) that enhances light-in efficiency is formed on the light-receiving surface side. Further, an n + -type diffusion layer 2 formed by an n-type diffusion treatment is formed on the light-receiving surface side, and an anti-reflection film 13 is formed on the n + -type diffusion layer 2 . These are produced by the same steps as the previous crystalline Si type solar cell elements.

進而,利用印刷法或噴墨法將本發明的電極用膠組成物填充至先前形成的通孔內部,進而,於受光面側,同樣地將本發明的電極用膠組成物印刷成柵格狀來形成組成物層,該組成物層形成通孔電極9及受光面集電用電極8。Further, the electrode composition for an electrode of the present invention is filled into the inside of the through hole formed by the printing method or the inkjet method, and the electrode composition for an electrode of the present invention is printed in the same manner on the light receiving surface side in the same manner. A composition layer is formed, and the composition layer forms the via electrode 9 and the light-receiving surface collecting electrode 8.

此處,用於填充與印刷的膠理想的是使用以黏度為 首,最適合各個製程的組成的膠,但亦可利用相同組成的膠一次性地進行填充、印刷。Here, the glue used for filling and printing is ideally used to have a viscosity of First, it is the most suitable glue for each process, but it can also be filled and printed at one time with the same composition of glue.

另一方面,於背面側,形成用以防止載子再結合的n+ 型擴散層2及p+ 型擴散層7。再者,形成於受光面側、通孔周邊、及背面側的n+ 型擴散層2是於受光面側-通孔周邊、及通孔周邊-背面側連續地形成,但亦可於各個部位獨立地形成,亦可同時形成。另外,此處使用硼(B)或鋁(Al)作為形成p+ 型擴散層7的雜質元素。該p+ 型擴散層7可藉由在形成上述抗反射膜13前的太陽電池元件製造步驟中實施將例如B作為擴散源的熱擴散處理來形成,或者當使用Al時,亦可藉由在上述印刷步驟中,於相反面側將鋁膠進行印刷並進行煅燒來形成。On the other hand, on the back side, an n + -type diffusion layer 2 and a p + -type diffusion layer 7 for preventing recombination of carriers are formed. Further, the n + -type diffusion layer 2 formed on the light-receiving surface side, the periphery of the via hole, and the back surface side is formed continuously around the light-receiving surface side - the via hole and the periphery of the via hole - the back surface side, but may be formed in each part They are formed independently or simultaneously. Further, boron (B) or aluminum (Al) is used here as an impurity element forming the p + -type diffusion layer 7. The p + -type diffusion layer 7 can be formed by performing a thermal diffusion treatment using, for example, B as a diffusion source in a solar cell element manufacturing step before forming the anti-reflection film 13 or, when Al is used, In the above printing step, aluminum paste is printed on the opposite surface side and calcined.

於背面側,如圖4的平面圖所示般,將本發明的電極用膠組成物分別於n+ 型擴散層2上及p+ 型擴散層7上印刷成條狀,藉此形成背面電極10及背面電極11。此處,當使用鋁膠形成p+ 型擴散層7時,只要僅對n+ 型擴散層2側使用本發明的電極用膠組成物來形成背面電極即可。On the back side, as shown in the plan view of FIG. 4, the electrode composition for an electrode of the present invention is printed in a strip shape on the n + -type diffusion layer 2 and the p + -type diffusion layer 7, respectively, thereby forming the back surface electrode 10 And the back electrode 11. Here, when the p + -type diffusion layer 7 is formed using aluminum paste, the back electrode may be formed by using the electrode composition for an electrode of the present invention only on the n + -type diffusion layer 2 side.

其後進行乾燥,然後於大氣中以450℃~850℃左右進行煅燒,而形成受光面集電用電極8與通孔電極9、以及背面電極10、背面電極11。另外,如上所述,當將鋁電極用於一個背面電極時,就鋁的燒結性及背面電極與p+ 型擴散層7的歐姆接觸性的觀點而言,亦可先印刷鋁膠,並進行煅燒,藉此形成一個背面電極,其後印刷、填充本發明的電極用膠組成物,並進行煅燒,藉此形成受光面集電用 電極8與通孔電極9、以及另一個背面電極。Thereafter, it is dried, and then calcined in the air at about 450 to 850 ° C to form the light-receiving surface current collecting electrode 8 and the via electrode 9, the back surface electrode 10, and the back surface electrode 11. Further, as described above, when an aluminum electrode is used for one back electrode, the aluminum paste can be printed and the aluminum paste can be printed first from the viewpoint of the sinterability of the aluminum and the ohmic contact between the back electrode and the p + -type diffusion layer 7. After calcination, one back electrode is formed, and thereafter, the electrode composition for an electrode of the present invention is printed and filled, and calcined, whereby the light-receiving surface current collecting electrode 8 and the via electrode 9 and the other back surface electrode are formed.

另外,具有圖6的立體圖所示的構造的太陽電池元件除不形成受光面集電用電極以外,能夠以與具有圖5的立體圖所示的構造的太陽電池元件相同的方式製造。即,於具有圖6的立體圖所示的構造的太陽電池元件中,本發明的電極用膠組成物可用於通孔電極9與背面電極10、背面電極11。In addition, the solar cell element having the structure shown in the perspective view of FIG. 6 can be manufactured in the same manner as the solar cell element having the structure shown in the perspective view of FIG. 5 except that the electrode for collecting the light-receiving surface is not formed. That is, in the solar cell element having the structure shown in the perspective view of Fig. 6, the electrode composition for an electrode of the present invention can be used for the via electrode 9, the back electrode 10, and the back electrode 11.

具有圖7的立體圖所示的構造的太陽電池元件具有如下的構造:將n型矽基板12用作基底基板,且於背面側形成有n+ 型擴散層2及p+ 型擴散層7。n+ 型擴散層2及p+ 型擴散層7可藉由與具有圖5的立體圖所示的構造的太陽電池元件相同的方法來形成。進而,於背面側,如圖4的平面圖所示般,將本發明的電極用膠組成物分別於n+ 型擴散層2上及p+ 型擴散層7上印刷成條狀,藉此形成背面電極10及背面電極11。此處,當使用鋁膠形成p+ 型擴散層7時,只要僅對n+ 型擴散層2側使用本發明的電極用膠組成物來形成背面電極即可。The solar cell element having the structure shown in the perspective view of FIG. 7 has a structure in which an n-type germanium substrate 12 is used as a base substrate, and an n + -type diffusion layer 2 and a p + -type diffusion layer 7 are formed on the back surface side. The n + -type diffusion layer 2 and the p + -type diffusion layer 7 can be formed by the same method as the solar cell element having the configuration shown in the perspective view of Fig. 5 . Further, on the back side, as shown in the plan view of FIG. 4, the electrode composition for an electrode of the present invention is printed on a strip of a n + type diffusion layer 2 and a p + type diffusion layer 7 to form a back surface. Electrode 10 and back electrode 11. Here, when the p + -type diffusion layer 7 is formed using aluminum paste, the back electrode may be formed by using the electrode composition for an electrode of the present invention only on the n + -type diffusion layer 2 side.

再者,本發明的電極用膠組成物並不限定於如上所述的太陽電池電極的用途,例如亦可較佳地用於電漿顯示器的電極線及屏蔽線、陶瓷電容器、天線電路、各種感測器電路、半導體元件的散熱材料等用途。Further, the electrode composition for an electrode of the present invention is not limited to the use of the solar cell electrode as described above, and may be preferably used for, for example, an electrode wire and a shield wire of a plasma display, a ceramic capacitor, an antenna circuit, and various The sensor circuit, the heat dissipation material of the semiconductor element, and the like.

該些之中,尤其可較佳地用於將電極形成在包含矽的基板上的情況。Among them, in particular, it is preferably used in the case where an electrode is formed on a substrate including germanium.

<太陽電池><solar battery>

本發明的太陽電池包含至少1個上述太陽電池元件,且於太陽電池元件的電極上配置接合線來構成。進而視需要,太陽電池亦可經由接合線而連結多個太陽電池元件,進而利用密封材進行密封來構成。The solar cell of the present invention comprises at least one of the above solar cell elements, and is configured by arranging bonding wires on the electrodes of the solar cell elements. Further, the solar cell may be connected to a plurality of solar cell elements via a bonding wire as needed, and further sealed by a sealing material.

上述接合線及密封材並無特別限制,可自業界通常所使用的接合線及密封材中適宜選擇。The bonding wire and the sealing material are not particularly limited, and can be suitably selected from bonding wires and sealing materials commonly used in the industry.

將日本申請案2011-090520號中所揭示的全部內容引用於本說明書中。The entire contents disclosed in Japanese Patent Application No. 2011-090520 are incorporated herein by reference.

本說明書中所記載的所有文獻、專利申請案、及技術規格是以與如下情況相同的程度,藉由參照而引用於本說明書中,該情況是具體地且個別地記載藉由參照而引用各個文獻、專利申請案、及技術規格的情況。All documents, patent applications, and technical specifications described in the present specification are incorporated herein by reference to the same extent as the same as the same. Literature, patent applications, and technical specifications.

[實例][Example]

以下,藉由實例來更具體地說明本發明,但本發明並不限定於該些實例,再者,只要事先無特別說明,則「份」及「%」為質量基準。Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to the examples, and the "parts" and "%" are the quality standards unless otherwise specified.

<實例1><Example 1> (a)電極用膠組成物的製備(a) Preparation of adhesive composition for electrodes

藉由通常的方法來製備包含7質量%的磷的含有磷的銅合金粒子,使其溶解並藉由水霧化法來將其粉末化,然後進行乾燥、分級。將經分級的粉末混合,進行脫氧.脫水處理,從而製成包含7質量%的磷的含有磷的銅合金粒子。再者,含有磷的銅合金粒子的粒徑(D50%)為5.0μm,其形狀為大致球狀。Phosphorus-containing copper alloy particles containing 7 mass% of phosphorus were prepared by a usual method, dissolved, and pulverized by a water atomization method, followed by drying and classification. The graded powder is mixed for deoxidation. Dehydration treatment was carried out to prepare phosphorus-containing copper alloy particles containing 7 mass% of phosphorus. Further, the phosphorus-containing copper alloy particles had a particle diameter (D50%) of 5.0 μm and a substantially spherical shape.

製備包含二氧化矽(SiO2 )3份、氧化鉛(PbO)60份、氧化硼(B2 O3 )18份、氧化鉍(Bi2 O3 )5份、氧化鋁(Al2 O3 )5份、氧化鋅(ZnO)9份的玻璃(以下,有時略記為「G01」)。所獲得的玻璃G01的軟化點為420℃,結晶化溫度超過650℃。Preparation includes 3 parts of cerium oxide (SiO 2 ), 60 parts of lead oxide (PbO), 18 parts of boron oxide (B 2 O 3 ), 5 parts of bismuth oxide (Bi 2 O 3 ), and aluminum oxide (Al 2 O 3 ) 5 parts of glass containing 9 parts of zinc oxide (ZnO) (hereinafter, abbreviated as "G01"). The obtained glass G01 had a softening point of 420 ° C and a crystallization temperature of more than 650 ° C.

使用所獲得的玻璃G01,獲得粒徑(D50%)為2.5μm的玻璃G01粒子。另外,其形狀為大致球狀。Using the obtained glass G01, glass G01 particles having a particle diameter (D50%) of 2.5 μm were obtained. In addition, the shape is substantially spherical.

將上述所獲得的含有磷的銅合金粒子39.9份、錫粒子(Sn;粒徑(D50%)為10.0μm;純度為99.9%)41.5份、玻璃G01粒子4.1份、萜品醇(Ter)14.1份、乙基纖維素(EC)0.4份混合,然後於瑪瑙乳缽中攪拌20分鐘,從而製成電極用膠組成物1。39.9 parts of the phosphorus-containing copper alloy particles obtained above, 41.5 parts of tin particles (Sn; particle diameter (D50%): 10.0 μm; purity: 99.9%), 4.1 parts of glass G01 particles, and terpene alcohol (Ter) 14.1. A portion and ethyl cellulose (EC) of 0.4 parts were mixed, and then stirred in an agate mortar for 20 minutes to prepare a gel composition 1 for an electrode.

(b)太陽電池元件的製作(b) Production of solar cell components

準備在形成有紋理的受光面上形成有n+ 型擴散層及抗反射膜(氮化矽膜)的膜厚為190μm的p型半導體基板,並將其切成125mm×125mm的大小。利用網版印刷法,將上述所獲得的電極用膠組成物1以成為如圖2所示的電極圖案的方式印刷於其受光面上。電極的圖案包含150μm寬的指狀線與1.5mm寬的匯流排,且以使煅燒後的膜厚成為20μm的方式適宜調整印刷條件(網版的網眼、印刷速度、印刷壓力)。將其放入加熱至150℃的烘箱中15分鐘,藉由蒸散來去除溶劑。A p-type semiconductor substrate having a thickness of 190 μm in which an n + -type diffusion layer and an anti-reflection film (tantalum nitride film) were formed on the textured light-receiving surface was prepared and cut into a size of 125 mm × 125 mm. The electrode composition 1 for electrodes obtained above was printed on the light-receiving surface so as to have an electrode pattern as shown in FIG. 2 by a screen printing method. The pattern of the electrode included a finger line having a width of 150 μm and a bus bar having a width of 1.5 mm, and the printing conditions (mesh of the screen, printing speed, and printing pressure) were appropriately adjusted so that the film thickness after firing became 20 μm. This was placed in an oven heated to 150 ° C for 15 minutes, and the solvent was removed by evaporation.

繼而,與上述同樣地,利用網版印刷將電極用膠組成物1與鋁電極膠以成為如圖3所示的電極圖案的方式印刷 於p型半導體基板的背面。Then, in the same manner as described above, the electrode composition 1 and the aluminum electrode paste are printed by screen printing so as to form an electrode pattern as shown in FIG. On the back side of the p-type semiconductor substrate.

包含電極用膠組成物1的背面輸出取出電極的圖案是以123mm×5mm來構成,且共計印刷了2處。再者,背面輸出取出電極是以使煅燒後的膜厚成為20μm的方式,適宜調整印刷條件(網版的網眼、印刷速度、印刷壓力)。另外,將鋁電極膠印刷於背面輸出取出電極以外的整個面上來形成背面集電用電極圖案。另外,以使煅燒後的背面集電用電極的膜厚成為30μm的方式,適宜調整鋁電極膠的印刷條件。將其放入加熱至150℃的烘箱中15分鐘,藉由蒸散來去除溶劑。The pattern of the back surface output extraction electrode including the electrode composition 1 for electrodes was composed of 123 mm × 5 mm, and a total of two were printed. In addition, the back surface output extraction electrode is such that the film thickness after firing is 20 μm, and the printing conditions (mesh of the screen, printing speed, and printing pressure) are appropriately adjusted. Further, an aluminum electrode paste was printed on the entire surface other than the back surface output extraction electrode to form a back surface current collector electrode pattern. In addition, the printing conditions of the aluminum electrode paste are appropriately adjusted so that the film thickness of the back surface current collecting electrode after firing is 30 μm. This was placed in an oven heated to 150 ° C for 15 minutes, and the solvent was removed by evaporation.

繼而,利用隧道式爐(Noritake公司製造,1列搬送W/B隧道式爐),於大氣環境下,對p型半導體基板進行煅燒最高溫度為800℃、保持時間為10秒的加熱處理(煅燒),從而製成形成有所期望的電極的太陽電池元件1。Then, using a tunnel furnace (manufactured by Noritake Co., Ltd., one-row W/B tunnel furnace), the p-type semiconductor substrate was fired in a high temperature at a temperature of 800 ° C and a holding time of 10 seconds (calcination). Thereby, a solar cell element 1 forming a desired electrode is formed.

<實例2><Example 2>

於實例1中,將電極形成時的煅燒條件自最高溫度800℃、10秒變更為最高溫度850℃、8秒,除此以外,以與實例1相同的方式製作太陽電池元件2。In the example 1, the solar cell element 2 was produced in the same manner as in Example 1 except that the firing conditions at the time of electrode formation were changed from the maximum temperature of 800 ° C to 10 seconds to the maximum temperature of 850 ° C for 8 seconds.

<實例3><Example 3>

於實例1中,將含有磷的銅合金粒子的磷含量自7質量%變更為6質量%,除此以外,以與實例1相同的方式製備電極用膠組成物3,並製作太陽電池元件3。In the same manner as in Example 1, except that the phosphorus content of the phosphorus-containing copper alloy particles was changed from 7 mass% to 6 mass%, the electrode composition 3 for electrodes was prepared, and the solar cell element 3 was produced. .

<實例4><Example 4>

於實例3中,將電極形成時的煅燒條件自最高溫度 800℃、10秒變更為最高溫度750℃、12秒,除此以外,以與實例3相同的方式製作太陽電池元件4。In Example 3, the calcination conditions at the time of electrode formation were from the highest temperature. The solar cell element 4 was produced in the same manner as in Example 3 except that the temperature was changed to the maximum temperature of 750 ° C for 12 seconds at 800 ° C for 10 seconds.

<實例5><Example 5>

於實例1中,將含有磷的銅合金粒子的磷含量自7質量%變更為8質量%,除此以外,以與實例1相同的方式製備電極用膠組成物5,並製作太陽電池元件5。In Example 1, the electrode composition 5 for an electrode was prepared in the same manner as in Example 1 except that the phosphorus content of the phosphorus-containing copper alloy particles was changed from 7 mass% to 8 mass%, and a solar cell element 5 was produced. .

<實例6><Example 6>

於實例1中,將含有磷的銅合金粒子的粒徑(D50%)自5.0μm變更為1.5μm,除此以外,以與實例1相同的方式製備電極用膠組成物6,並製作太陽電池元件6。In the same manner as in Example 1, except that the particle diameter (D50%) of the phosphorus-containing copper alloy particles was changed from 5.0 μm to 1.5 μm, the electrode composition 6 for an electrode was prepared, and a solar cell was produced. Element 6.

<實例7><Example 7>

於實例1中,變更含有磷的銅合金粒子與含有錫的粒子的含量,將含有磷的銅合金粒子的含量變成56.3份,將含有錫的粒子的含量變成25.1份,除此以外,以與實例1相同的方式製備電極用膠組成物7,並製作太陽電池元件7。In Example 1, the content of the phosphorus-containing copper alloy particles and the tin-containing particles was changed, the content of the phosphorus-containing copper alloy particles was changed to 56.3 parts, and the content of the tin-containing particles was changed to 25.1 parts, and In the same manner as in Example 1, a gel composition 7 for an electrode was prepared, and a solar cell element 7 was produced.

<實例8><Example 8>

於實例1中,變更含有磷的銅合金粒子與含有錫的粒子的含量,將含有磷的銅合金粒子的含量變成73.0份,將含有錫的粒子的含量變成8.4份,除此以外,以與實例1相同的方式製備電極用膠組成物8,並製作太陽電池元件8。In Example 1, the content of the phosphorus-containing copper alloy particles and the tin-containing particles was changed, the content of the phosphorus-containing copper alloy particles was changed to 73.0 parts, and the content of the tin-containing particles was changed to 8.4 parts, and In the same manner as in Example 1, a gel composition 8 for an electrode was prepared, and a solar cell element 8 was produced.

<實例9><Example 9>

於實例1中,作為含有錫的粒子,使用包含Sn-58Bi (於Sn中包含58質量%的Bi的合金)的錫合金粒子代替錫粒子(Sn),並將其粒徑(D50%)設為15.0μm,除此以外,以與實例1相同的方式製備電極用膠組成物9,並製作太陽電池元件9。In Example 1, as a tin-containing particle, Sn-58Bi was used. The tin alloy particles (the alloy containing 58% by mass of Bi in Sn) were prepared in the same manner as in Example 1 except that the tin particles (Sn) were used instead of the tin particles (Sn), and the particle diameter (D50%) was changed to 15.0 μm. The electrode composition 9 was used for the electrode, and the solar cell element 9 was produced.

<實例10><Example 10>

於實例1中,作為含有錫的粒子,使用包含Sn-4Ag-0.5Cu(於Sn中包含4質量%的Ag與0.5質量%的Cu的合金)的錫合金粒子代替錫粒子(Sn),並將其粒徑(D50%)設為8.0μm,除此以外,以與實例1相同的方式製備電極用膠組成物10,並製作太陽電池元件10。In Example 1, as the tin-containing particles, tin alloy particles containing Sn-4Ag-0.5Cu (an alloy containing 4% by mass of Ag and 0.5% by mass of Cu in Sn) were used instead of tin particles (Sn), and The electrode composition 10 for an electrode was prepared in the same manner as in Example 1 except that the particle diameter (D50%) was 8.0 μm, and the solar cell element 10 was produced.

<實例11><Example 11>

於實例1中,將含有錫的粒子的粒徑(D50%)自10.0μm變更為6.0μm,除此以外,以與實例1相同的方式製備電極用膠組成物11,並製作太陽電池元件11。In the same manner as in Example 1, except that the particle size (D50%) of the tin-containing particles was changed from 10.0 μm to 6.0 μm, the electrode composition 11 for an electrode was prepared, and a solar cell element 11 was produced. .

<實例12><Example 12>

於實例1中,向電極用膠組成物中添加銀粒子(Ag;粒徑(D50%)為3.0μm;純度為99.5%)。具體而言,將各成分的含量變更為含有磷的銅合金粒子37.9份、錫粒子39.5份、銀粒子4.0份、玻璃G01粒子4.1份、萜品醇14.1份、乙基纖維素0.4份,除此以外,以與實例1相同的方式製備電極用膠組成物12,並製作太陽電池元件12。In Example 1, silver particles (Ag; particle diameter (D50%): 3.0 μm; purity: 99.5%) were added to the electrode composition. Specifically, the content of each component was changed to 37.9 parts of copper alloy particles containing phosphorus, 39.5 parts of tin particles, 4.0 parts of silver particles, 4.1 parts of glass G01 particles, 14.1 parts of terpineol, and 0.4 parts of ethyl cellulose. Otherwise, the electrode composition 12 for an electrode was prepared in the same manner as in Example 1 to prepare a solar cell element 12.

<實例13><Example 13>

於實例1中,向電極用膠組成物中進而添加銀粒子(Ag;粒徑(D50%)為3.0μm)。具體而言,將各成分的 含量變更為含有磷的銅合金粒子36.9份、錫粒子38.4份、銀粒子6.1份、玻璃G01粒子4.1份、萜品醇14.1份、乙基纖維素0.4份,除此以外,以與實例1相同的方式製備電極用膠組成物13,並製作太陽電池元件13。In Example 1, silver particles (Ag; particle diameter (D50%): 3.0 μm) were further added to the electrode composition for electrodes. Specifically, the ingredients The content was changed to 36.9 parts of phosphorus-containing copper alloy particles, 38.4 parts of tin particles, 6.1 parts of silver particles, 4.1 parts of glass G01 particles, 14.1 parts of terpineol, and 0.4 parts of ethyl cellulose, and the same as in Example 1. The electrode composition 13 for electrodes was prepared in the same manner, and the solar cell element 13 was produced.

<實例14><Example 14>

於實例1中,變更玻璃G01粒子的含量。具體而言,將各成分的含量變更為含有磷的銅合金粒子38.3份、錫粒子39.9份、玻璃G01粒子7.8份、萜品醇13.5份、乙基纖維素0.4份,除此以外,以與實例1相同的方式製備電極用膠組成物14,並製作太陽電池元件14。In Example 1, the content of the glass G01 particles was changed. Specifically, the content of each component was changed to 38.3 parts of phosphorus-containing copper alloy particles, 39.9 parts of tin particles, 7.8 parts of glass G01 particles, 13.5 parts of terpineol, and 0.4 parts of ethyl cellulose, and In the same manner as in Example 1, a gel composition 14 for an electrode was prepared, and a solar cell element 14 was produced.

<實例15><Example 15>

於實例1中,將玻璃粒子的組成自玻璃G01變更為以下所示的玻璃G02,除此以外,以與實例1相同的方式製備電極用膠組成物15,並製作太陽電池元件15。In the same manner as in Example 1, except that the composition of the glass particles was changed from the glass G01 to the glass G02 shown below, the electrode composition 15 for an electrode was prepared, and the solar cell element 15 was produced.

玻璃G02是以包含氧化釩(V2 O5 )45份、氧化磷(P2 O5 )24.2份、氧化鋇(BaO)20.8份、氧化銻(Sb2 O3 )5份、氧化鎢(WO3 )5份的方式製備。另外,該玻璃G02的軟化點為492℃,結晶化起始溫度超過650℃。Glass G02 is composed of 45 parts of vanadium oxide (V 2 O 5 ), 24.2 parts of phosphorus oxide (P 2 O 5 ), 20.8 parts of barium oxide (BaO), 5 parts of barium oxide (Sb 2 O 3 ), and tungsten oxide (WO). 3 ) Prepared in 5 parts. Further, the glass G02 had a softening point of 492 ° C and a crystallization initiation temperature of more than 650 ° C.

使用所獲得的玻璃G02,獲得粒徑(D50%)為2.5μm的玻璃G02粒子。另外,其形狀為大致球狀。Using the obtained glass G02, glass G02 particles having a particle diameter (D50%) of 2.5 μm were obtained. In addition, the shape is substantially spherical.

<實例16><Example 16>

於實例1中,將溶劑自萜品醇變更為二乙二醇單丁醚(BC),另外,將樹脂自乙基纖維素變更為聚丙烯酸乙酯(EPA)。具體而言,將各成分的含量變更為含有磷的銅合 金粒子39.9份、錫粒子41.5份、玻璃G01粒子4.1份、二乙二醇單丁醚12.3份、聚丙烯酸乙酯2.2份,除此以外,以與實例1相同的方式製備電極用膠組成物16,並製作太陽電池元件16。In Example 1, the solvent was changed from terpineol to diethylene glycol monobutyl ether (BC), and the resin was changed from ethyl cellulose to polyethyl acrylate (EPA). Specifically, changing the content of each component to copper containing phosphorus An electrode composition for an electrode was prepared in the same manner as in Example 1 except that 39.9 parts of gold particles, 41.5 parts of tin particles, 4.1 parts of glass G01 particles, 12.3 parts of diethylene glycol monobutyl ether, and 2.2 parts of polyethyl acrylate were used. 16, and a solar cell element 16 is fabricated.

<實例17~實例20><Example 17 to Example 20>

於實例1中,如表1所示般變更含有磷的銅合金粒子的磷含量、粒徑(D50%)及其含量,含有錫的粒子的組成、粒徑(D50%)及其含量,銀粒子的含量,玻璃粒子的種類及其含量,溶劑的種類及其含量,樹脂的種類及其含量,除此以外,以與實例1相同的方式分別製備電極用膠組成物17~電極用膠組成物20。In Example 1, as shown in Table 1, the phosphorus content, the particle diameter (D50%) and the content of the phosphorus-containing copper alloy particles were changed, the composition of the tin-containing particles, the particle diameter (D50%) and the content thereof, and silver. The content of the particles, the type and content of the glass particles, the type and content of the solvent, the type and content of the resin, and the composition of the electrode for the electrode 17 to the electrode were prepared in the same manner as in Example 1. Object 20.

繼而,分別使用所獲得的電極用膠組成物17~電極用膠組成物20,並如表1所示般變更加熱處理的溫度及處理時間,除此以外,以與實例1相同的方式分別製作形成有所期望的電極的太陽電池元件17~太陽電池元件20。Then, the obtained electrode composition 17 to electrode adhesive composition 20 was used, and the temperature and the treatment time of the heat treatment were changed as shown in Table 1, except that the same procedure as in Example 1 was carried out. The solar cell element 17 to the solar cell element 20 having the desired electrode are formed.

<實例21><Example 21>

準備在形成有紋理的受光面上形成有n+ 型擴散層及抗反射膜(氮化矽膜)的膜厚為190μm的p型半導體基板,並將其切成125mm×125mm的大小。之後,將鋁電極膠印刷於背面來形成背面集電用電極圖案。背面集電用電極圖案如圖3所示,印刷在除背面輸出取出電極以外的整個面上。另外,以使煅燒後的背面集電用電極的膜厚成為30μm的方式,適宜調整鋁電極膠的印刷條件。將其放入加熱至150℃的烘箱中15分鐘,藉由蒸散來去除溶劑。A p-type semiconductor substrate having a thickness of 190 μm in which an n + -type diffusion layer and an anti-reflection film (tantalum nitride film) were formed on the textured light-receiving surface was prepared and cut into a size of 125 mm × 125 mm. Thereafter, an aluminum electrode paste was printed on the back surface to form a back surface current collecting electrode pattern. As shown in FIG. 3, the electrode pattern for the back surface current is printed on the entire surface except the back surface output extraction electrode. In addition, the printing conditions of the aluminum electrode paste are appropriately adjusted so that the film thickness of the back surface current collecting electrode after firing is 30 μm. This was placed in an oven heated to 150 ° C for 15 minutes, and the solvent was removed by evaporation.

繼而,利用隧道式爐(Noritake公司製造,1列搬送W/B隧道式爐),於大氣環境下進行煅燒最高溫度為800℃、保持時間為10秒的加熱處理(煅燒),從而形成背面的集電用電極及p+ 型擴散層。Then, a tunnel furnace (manufactured by Noritake Co., Ltd., one-row W/B tunnel furnace) was used, and the heat treatment (calcination) at a maximum temperature of 800 ° C and a holding time of 10 seconds was performed in an atmosphere to form a back surface. Electrocollector electrode and p + type diffusion layer.

其後,以成為如圖2及圖3所示的電極圖案的方式印刷上述所獲得的電極用膠組成物1。受光面的電極的圖案包含150μm寬的指狀線與1.5mm寬的匯流排,且以使煅燒後的膜厚成為20μm的方式適宜調整印刷條件(網版的網眼、印刷速度、印刷壓力)。另外,背面的電極的圖案是以123mm×5mm來構成,且以使煅燒後的膜厚成為20μm的方式共計印刷了2處。將其放入加熱至150℃的烘箱中15分鐘,藉由蒸散來去除溶劑。Thereafter, the electrode composition 1 for an electrode obtained as described above is printed so as to have an electrode pattern as shown in FIGS. 2 and 3. The pattern of the electrode on the light-receiving surface includes a finger line of 150 μm width and a bus bar of 1.5 mm width, and the printing conditions (mesh of the screen, printing speed, and printing pressure) are appropriately adjusted so that the film thickness after firing becomes 20 μm. . In addition, the pattern of the electrode on the back surface was composed of 123 mm × 5 mm, and two of them were printed in total so that the film thickness after firing became 20 μm. This was placed in an oven heated to 150 ° C for 15 minutes, and the solvent was removed by evaporation.

利用隧道式爐(Noritake公司製造,1列搬送W/B隧道式爐),於大氣環境下對其進行煅燒最高溫度為650℃、保持時間為10秒的加熱處理(煅燒),從而製成形成有所期望的電極的太陽電池元件21。Using a tunnel furnace (manufactured by Noritake Co., Ltd., one-row W/B tunnel furnace), it is calcined in an air atmosphere at a maximum temperature of 650 ° C and a holding time of 10 seconds for heat treatment (calcination) to form A solar cell element 21 having a desired electrode.

<實例22><Example 22>

於實例21中,將上述所獲得的電極用膠組成物5用於受光面的電極及背面輸出取出電極的製作,除此以外,以與實例21相同的方式製作太陽電池元件22。In the same manner as in Example 21, the solar cell element 22 was produced in the same manner as in Example 21 except that the electrode composition 5 for the electrode obtained above was used for the electrode on the light-receiving surface and the back-side output extraction electrode.

<實例23><Example 23>

於實例21中,將上述所獲得的電極用膠組成物9用於受光面的電極及背面輸出取出電極的製作,並將電極形成時的煅燒條件自最高溫度650℃、10秒變更為最高溫度 620℃、10秒,除此以外,以與實例21相同的方式製作太陽電池元件23。In Example 21, the electrode composition 9 for an electrode obtained above was used for the production of the electrode on the light-receiving surface and the output electrode on the back surface, and the firing condition at the time of electrode formation was changed from the highest temperature of 650 ° C to 10 seconds to the highest temperature. The solar cell element 23 was fabricated in the same manner as in Example 21 except that at 620 ° C for 10 seconds.

<實例24><Example 24>

使用上述所獲得的電極用膠組成物1,製作具有如圖5所示的構造的太陽電池元件24。以下表示具體的製作方法。首先針對p型矽基板,藉由雷射鑽孔來形成貫穿受光面側及背面側的兩面的直徑為100μm的通孔。另外,於受光面側依次形成紋理、n+ 型擴散層、抗反射膜。再者,於通孔內部、及背面的一部分上亦分別形成n+ 型擴散層。繼而,利用噴墨法將電極用膠組成物1填充至先前形成的通孔內部,進而,於受光面側亦將電極用膠組成物1印刷成柵格狀。Using the electrode composition 1 for electrodes obtained above, a solar cell element 24 having the structure shown in Fig. 5 was produced. The specific production method is shown below. First, a through hole having a diameter of 100 μm penetrating both sides of the light receiving surface side and the back surface side by laser drilling is formed for the p-type germanium substrate. Further, a texture, an n + -type diffusion layer, and an anti-reflection film are sequentially formed on the light-receiving surface side. Further, an n + -type diffusion layer is also formed on each of the inside of the via hole and the back surface. Then, the electrode composition 1 for the electrode is filled into the inside of the through hole formed by the inkjet method, and the electrode composition 1 for the electrode is printed on the light receiving surface side in a grid shape.

另一方面,於背面側以如下方式形成:使用電極用膠組成物1與鋁電極膠,以如圖4所示的圖案將其等印刷成條狀,並於通孔的下方印刷電極用膠組成物1。利用隧道式爐(Noritake公司製造,1列搬送W/B隧道式爐),於大氣環境下對其進行煅燒最高溫度為800℃、保持時間為10秒的加熱處理,從而製成形成有所期望的電極的太陽電池元件24。On the other hand, it is formed on the back side in such a manner that the electrode composition 1 and the aluminum electrode paste are used, and they are printed in a strip shape as shown in FIG. 4, and the electrode paste is printed under the through hole. Composition 1. Using a tunnel furnace (manufactured by Noritake Co., Ltd., one-row W/B tunnel furnace), it is calcined in an atmospheric environment at a maximum temperature of 800 ° C and a holding time of 10 seconds for heat treatment. The solar cell element 24 of the electrode.

此時,針對形成有鋁電極膠的部分,藉由煅燒而使Al擴散至p型矽基板內,藉此形成p+ 型擴散層。At this time, for the portion where the aluminum electrode paste was formed, Al was diffused into the p-type germanium substrate by firing, thereby forming a p + -type diffusion layer.

<實例25><Example 25>

於實例24中,自電極用膠組成物1變更為上述所獲得的電極用膠組成物12,形成受光面集電用電極、通孔電 極、背面電極,除此以外,以與實例24相同的方式製作太陽電池元件25。In the example 24, the electrode composition 1 for the electrode was changed to the electrode composition 12 for the electrode obtained above, and the electrode for collecting the light-receiving surface was formed. A solar cell element 25 was produced in the same manner as in Example 24 except for the electrode and the back electrode.

<實例26><Example 26>

於實例24中,將電極形成時的煅燒條件自最高溫度800℃、10秒變更為最高溫度850℃、8秒,除此以外,以與實例24相同的方式製作太陽電池元件26。In the example 24, the solar cell element 26 was produced in the same manner as in Example 24 except that the firing conditions at the time of electrode formation were changed from the maximum temperature of 800 ° C to 10 seconds to the maximum temperature of 850 ° C for 8 seconds.

<實例27><Example 27>

於實例24中,自電極用膠組成物1變更為上述所獲得的電極用膠組成物9,形成受光面集電用電極、通孔電極、背面電極,除此以外,以與實例24相同的方式製作太陽電池元件27。In the example 24, the electrode composition 1 for the electrode was changed to the electrode composition 9 for the electrode obtained above, and the electrode for collecting the light-receiving surface, the via electrode, and the back electrode were formed, and the same procedure as in Example 24 was carried out. The solar cell element 27 is fabricated in a manner.

<實例28><Example 28>

於實例1中,將玻璃粒子自玻璃G01粒子變更為玻璃G03粒子,除此以外,以與實例1相同的方式製備電極用膠組成物28。In the same manner as in Example 1, except that the glass particles were changed from the glass G01 particles to the glass G03 particles in Example 1, the electrode composition 28 for electrodes was prepared.

再者,玻璃G03是以包含二氧化矽(SiO2 )13份、氧化硼(B2 O3 )58份、氧化鋅(ZnO)38份、氧化鋁(Al2 O3 )12份、氧化鋇(BaO)12份的方式製備。所獲得的玻璃G03的軟化點為583℃,結晶化溫度超過650℃。Further, the glass G03 is composed of 13 parts of cerium oxide (SiO 2 ), 58 parts of boron oxide (B 2 O 3 ), 38 parts of zinc oxide (ZnO), 12 parts of aluminum oxide (Al 2 O 3 ), and cerium oxide. (BaO) was prepared in 12 parts. The obtained glass G03 had a softening point of 583 ° C and a crystallization temperature of more than 650 ° C.

使用所獲得的玻璃G03,獲得粒徑(D50%)為2.5μm的玻璃G03粒子。另外,其形狀為大致球狀。Using the obtained glass G03, glass G03 particles having a particle diameter (D50%) of 2.5 μm were obtained. In addition, the shape is substantially spherical.

繼而,使用上述所獲得的電極用膠組成物28,製作具有如圖6所示的構造的太陽電池元件28。除不形成受光面電極以外,製作方法與實例24~實例27相同。再者,將 煅燒條件設為最高溫度為800℃、保持時間為10秒。Then, using the electrode composition 28 for electrodes obtained above, a solar cell element 28 having the structure shown in Fig. 6 was produced. The production method was the same as that of Example 24 to Example 27 except that the light-receiving surface electrode was not formed. Furthermore, The calcination conditions were set to a maximum temperature of 800 ° C and a holding time of 10 seconds.

<實例29><Example 29>

於實例28中,將電極形成時的煅燒條件自最高溫度800℃、10秒變更為最高溫度850℃、8秒,除此以外,以與實例28相同的方式製作太陽電池元件29。In the example 28, the solar cell element 29 was produced in the same manner as in Example 28 except that the firing conditions at the time of electrode formation were changed from the maximum temperature of 800 ° C to 10 seconds to the maximum temperature of 850 ° C for 8 seconds.

<實例30><Example 30>

使用上述所獲得的電極用膠組成物28,製作具有如圖7所示的構造的太陽電池元件30。除將n型矽基板用於成為基底的基板,且不形成受光面電極、通孔及通孔電極以外,製作方法與實例24相同。再者,將煅燒條件設為最高溫度為800℃、保持時間為10秒。Using the electrode composition 28 for electrodes obtained above, a solar cell element 30 having the structure shown in Fig. 7 was produced. The manufacturing method was the same as that of Example 24 except that the n-type germanium substrate was used as the substrate to be the substrate, and the light-receiving surface electrode, the via hole, and the via electrode were not formed. Further, the calcination conditions were set to a maximum temperature of 800 ° C and a holding time of 10 seconds.

<實例31><Example 31>

於實例5中,將玻璃粒子自玻璃G01粒子變更為玻璃G03粒子,除此以外,以與實例5相同的方式製備電極用膠組成物31。使用該電極用膠組成物31,以與實例30相同的方式製作具有如圖7所示的構造的太陽電池元件31。In the same manner as in Example 5 except that the glass particles were changed from the glass G01 particles to the glass G03 particles in Example 5, the electrode composition 31 for an electrode was prepared. Using the electrode composition 31 for an electrode, a solar cell element 31 having the configuration shown in Fig. 7 was produced in the same manner as in Example 30.

<實例32><Example 32>

於實例12中,將玻璃粒子自玻璃G01粒子變更為玻璃G03粒子,除此以外,以與實例12相同的方式製備電極用膠組成物32。使用該電極用膠組成物32,以與實例30相同的方式製作具有如圖7所示的構造的太陽電池元件32。In the same manner as in Example 12 except that the glass particles were changed from the glass G01 particles to the glass G03 particles in Example 12, the electrode composition 32 for electrodes was prepared. Using the electrode composition 32, a solar cell element 32 having the configuration shown in Fig. 7 was fabricated in the same manner as in Example 30.

<比較例1><Comparative Example 1>

於實例1中的電極用膠組成物的製備中,不使用含有 磷的銅合金粒子及含有錫的粒子,且以成為表1所示的組成的方式變更各成分,除此以外,以與實例1相同的方式製備電極用膠組成物C1。In the preparation of the adhesive composition for an electrode in Example 1, no use was contained. The electrode composition C1 for an electrode was prepared in the same manner as in Example 1 except that the copper alloy particles of phosphorus and the particles containing tin were changed so as to have the composition shown in Table 1.

除使用不包含含有磷的銅合金粒子及含有錫的粒子的電極用膠組成物C1以外,以與實例1相同的方式製作太陽電池元件C1。The solar cell element C1 was produced in the same manner as in Example 1 except that the electrode composition C1 for the electrode containing no phosphorus-containing copper alloy particles and tin-containing particles was used.

<比較例2~比較例4><Comparative Example 2 to Comparative Example 4>

使用磷的含量不同的含有磷的銅合金粒子,且不使用含有錫的粒子,分別製備表1所示的組成的電極用膠組成物C2~電極用膠組成物C4。Phosphorus-containing copper alloy particles having different phosphorus contents were used, and the electrode composition C2 to electrode adhesive composition C4 having the composition shown in Table 1 was prepared without using tin-containing particles.

除分別使用電極用膠組成物C2~電極用膠組成物C4以外,以與比較例1相同的方式分別製作太陽電池元件C2~太陽電池元件C4。The solar cell element C2 to the solar cell element C4 were produced in the same manner as in Comparative Example 1, except that the electrode composition C2 to the electrode composition C4 for the electrode were used.

<比較例5><Comparative Example 5>

於實例1中的電極用膠組成物的製備中,使用銅粒子(純度為99.5%,粒徑(D50%)為5.0μm,含量為39.9份)代替含有磷的銅合金粒子,且以成為表1所示的組成的方式變更各成分,除此以外,以與實例1相同的方式製備電極用膠組成物C5。In the preparation of the electrode composition for an electrode in Example 1, copper particles (purity: 99.5%, particle diameter (D50%): 5.0 μm, content: 39.9 parts) were used instead of the phosphorus-containing copper alloy particles, and The electrode composition C5 for an electrode was prepared in the same manner as in Example 1 except that the components were changed in the manner of the composition shown in the above.

除使用電極用膠組成物C5以外,以與比較例1相同的方式製作太陽電池元件C5。The solar cell element C5 was produced in the same manner as in Comparative Example 1, except that the electrode composition C5 for the electrode was used.

<比較例6><Comparative Example 6>

於實例24中,自電極用膠組成物1變更為上述所獲得的電極用膠組成物C1,形成受光面集電用電極、通孔電 極、背面電極,除此以外,以與實例24相同的方式製作太陽電池元件C6。In the example 24, the electrode composition 1 for the electrode was changed to the electrode composition C1 for the electrode obtained above, and the electrode for collecting the light-receiving surface and the via hole were formed. A solar cell element C6 was produced in the same manner as in Example 24 except for the electrode and the back electrode.

<比較例7><Comparative Example 7>

於實例28中,自電極用膠組成物28變更為上述所獲得的電極用膠組成物C1,除此以外,以與實例28相同的方式製作太陽電池元件C7。In the example 28, the solar cell element C7 was produced in the same manner as in Example 28 except that the electrode composition 28 for the electrode was changed to the electrode composition C1 for the electrode obtained above.

<比較例8><Comparative Example 8>

於實例30中,自電極用膠組成物28變更為上述所獲得的電極用膠組成物C1,除此以外,以與實例30相同的方式製作太陽電池元件C8。In the example 30, the solar cell element C8 was produced in the same manner as in Example 30 except that the electrode composition 28 for the electrode was changed to the electrode composition C1 for the electrode obtained above.

<評價><evaluation>

所製作的太陽電池元件的評價是將作為人造日光的Wacom Electric(股份)製造的WXS-155S-10、作為電流-電壓(I-V)評價測定器的I-V CURVE TRACER MP-160(EKO INSTRUMENT公司製造)的測定裝置加以組合來進行。表示作為太陽電池的發電性能的Jsc(短路電流)、Voc(開路電壓)、FF(填充係數)、Eff(轉換效率)是藉由分別依據JIS-C-8912、JIS-C-8913及JIS-C-8914進行測定所獲得者。於兩面電極構造的太陽電池元件中,將所獲得的各測定值換算成以比較例1(太陽電池元件C1)的測定值作為100.0的相對值後示於表2。再者,於比較例2中,因銅粒子的氧化而導致電極的電阻率變大,無法評價。The solar cell element produced was evaluated as WXS-155S-10 manufactured by Wacom Electric Co., Ltd. as artificial daylight, and IV CURVE TRACER MP-160 (manufactured by EKO INSTRUMENT Co., Ltd.) as a current-voltage (IV) evaluation tester. The measuring devices are combined and carried out. Jsc (short circuit current), Voc (open circuit voltage), FF (fill factor), and Eff (conversion efficiency) indicating the power generation performance of the solar cell are based on JIS-C-8912, JIS-C-8913, and JIS-, respectively. C-8914 was obtained by measurement. In the solar cell element of the double-sided electrode structure, the obtained measured values were converted into the relative values of 100.0 as measured values of Comparative Example 1 (solar battery element C1), and are shown in Table 2. Further, in Comparative Example 2, the electrical resistivity of the electrode was increased due to oxidation of the copper particles, and it was impossible to evaluate.

進而,利用掃描型電子顯微鏡Miniscope TM-1000(日立製作所(股份)製造),以15kV的加速電壓觀察對所製作的電極用膠組成物進行煅燒而形成的受光面電極的剖面,並調査電極內的Cu-Sn合金相、Sn-P-O玻璃相的有無及Sn-P-O玻璃相的形成部位。將其結果亦一併示於表2。Furthermore, a cross section of the light-receiving surface electrode formed by firing the prepared electrode composition by observation was observed with a scanning electron microscope Miniscope TM-1000 (manufactured by Hitachi, Ltd.) at an acceleration voltage of 15 kV, and the inside of the electrode was examined. The Cu-Sn alloy phase, the presence or absence of the Sn-PO glass phase, and the formation site of the Sn-PO glass phase. The results are also shown in Table 2.

根據表2可知,比較例3~比較例5與比較例1相比發電性能劣化。As is clear from Table 2, in Comparative Examples 3 to 5, the power generation performance was deteriorated as compared with Comparative Example 1.

該情況例如可如下般考慮。於比較例4中,可認為因未包含含有錫的粒子,故於煅燒中產生矽基板與銅的相互 擴散,基板內的pn接合特性劣化。另外,於比較例5中,可認為因未使用含有磷的銅合金粒子而使用純銅(磷含量為0質量%),故於煅燒中銅粒子在與含有錫的粒子進行反應之前氧化,未形成Cu-Sn合金相且電極的電阻增加。This case can be considered as follows, for example. In Comparative Example 4, it is considered that since the particles containing tin are not contained, the mutual formation of the tantalum substrate and the copper is generated during the calcination. Diffusion, the pn junction characteristics in the substrate deteriorate. Further, in Comparative Example 5, it is considered that pure copper (phosphorus content is 0% by mass) is used because the phosphorus-containing copper alloy particles are not used, so that the copper particles are oxidized before the reaction with the tin-containing particles in the calcination, and are not formed. The Cu-Sn alloy phase and the resistance of the electrode increase.

另一方面,實例1~實例23中所製作的太陽電池元件的發電性能與比較例1的太陽電池元件的測定值相比,大致相同。尤其,太陽電池元件21~太陽電池元件23儘管於比較低的溫度(620℃~650℃)下對電極用膠組成物進行了煅燒,但仍然顯示高發電性能。另外,觀察組織的結果,於受光面電極內存在Cu-Sn合金相與Sn-P-O玻璃相,且Sn-P-O玻璃相形成在Cu-Sn合金相與矽基板之間。On the other hand, the power generation performance of the solar cell element produced in Examples 1 to 23 was substantially the same as the measured value of the solar cell element of Comparative Example 1. In particular, the solar cell element 21 to the solar cell element 23 exhibit high electric power generation performance although the electrode composition for the electrode is calcined at a relatively low temperature (620 ° C to 650 ° C). Further, as a result of observing the structure, a Cu-Sn alloy phase and a Sn-P-O glass phase were present in the light-receiving electrode, and a Sn-P-O glass phase was formed between the Cu-Sn alloy phase and the tantalum substrate.

繼而,針對反向接觸型的太陽電池元件之中具有圖5的構造的太陽電池元件,將所獲得的各測定值換算成以比較例6的測定值作為100.0的相對值後示於表3。進而,將觀察受光面電極的剖面的結果亦一併示於表3。Then, among the solar cell elements having the structure of FIG. 5 among the solar cell elements of the reverse contact type, the obtained measured values were converted into the relative values of 100.0 as the measured values of Comparative Example 6, and are shown in Table 3. Further, the results of observing the cross section of the light-receiving surface electrode are also shown in Table 3.

根據表3可知,實例24~實例27中所製作的太陽電 池元件顯示與比較例6的太陽電池元件大致相同的發電性能。另外,觀察組織的結果,於受光面電極內存在Cu-Sn合金相與Sn-P-O玻璃相,且Sn-P-O玻璃相形成在Cu-Sn合金相與矽基板之間。According to Table 3, the solar cells produced in Examples 24 to 27 The cell element showed substantially the same power generation performance as the solar cell element of Comparative Example 6. Further, as a result of observing the structure, a Cu-Sn alloy phase and a Sn-P-O glass phase were present in the light-receiving electrode, and a Sn-P-O glass phase was formed between the Cu-Sn alloy phase and the tantalum substrate.

繼而,針對反向接觸型的太陽電池元件之中具有圖6的構造的太陽電池元件,將所獲得的各測定值換算成以比較例7的測定值作為100.0的相對值後示於表4。進而,將觀察背面電極之中,對所製備的電極用膠組成物進行煅燒而形成的電極的剖面的結果亦一併示於表4。Then, among the solar cell elements having the structure of FIG. 6 among the solar cell elements of the reverse contact type, the obtained measured values were converted into the relative values of 100.0 as measured values of Comparative Example 7, and are shown in Table 4. Further, the results of the cross section of the electrode formed by firing the prepared electrode composition in the back electrode were also shown in Table 4.

根據表4可知,實例28~實例29中所製作的太陽電池元件顯示與比較例7的太陽電池元件大致相同的發電性能。另外,觀察組織的結果,於背面電極之中,對所製作的電極用膠組成物進行煅燒而形成的電極內存在Cu-Sn合金相與Sn-P-O玻璃相,且Sn-P-O玻璃相形成在Cu-Sn合金相與矽基板之間。According to Table 4, the solar cell elements produced in Examples 28 to 29 exhibited substantially the same power generation performance as the solar cell elements of Comparative Example 7. Further, as a result of observing the structure, among the back electrodes, the Cu-Sn alloy phase and the Sn-PO glass phase were present in the electrode formed by firing the prepared electrode composition, and the Sn-PO glass phase was formed. Between the Cu-Sn alloy phase and the tantalum substrate.

繼而,針對反向接觸型的太陽電池元件之中具有圖7的構造的太陽電池元件,將所獲得的各測定值換算成以比 較例8的測定值作為100.0的相對值後示於表5。進而,將觀察背面電極之中,對所製備的電極用膠組成物進行煅燒而形成的電極的剖面的結果亦一併示於表5。Then, among the solar cell elements having the structure of FIG. 7 among the solar cell elements of the reverse contact type, the obtained measured values are converted into ratios. The measured value of Comparative Example 8 is shown in Table 5 as a relative value of 100.0. Further, the results of the cross section of the electrode formed by firing the prepared electrode composition in the back electrode were also shown in Table 5.

可知實例30~實例32中所製作的太陽電池元件顯示與比較例8的太陽電池元件大致相同的發電性能。另外,觀察組織的結果,於背面電極之中,對所製備的電極用膠組成物進行煅燒而形成的電極內存在Cu-Sn合金相與Sn-P-O玻璃相,且Sn-P-O玻璃相形成在Cu-Sn合金相與矽基板之間。It can be seen that the solar cell elements fabricated in Examples 30 to 32 exhibited substantially the same power generation performance as the solar cell elements of Comparative Example 8. Further, as a result of observing the structure, among the back electrodes, the Cu-Sn alloy phase and the Sn-PO glass phase were present in the electrode formed by calcining the prepared electrode composition, and the Sn-PO glass phase was formed. Between the Cu-Sn alloy phase and the tantalum substrate.

1‧‧‧半導體基板1‧‧‧Semiconductor substrate

2‧‧‧n+ 型擴散層2‧‧‧n + type diffusion layer

3‧‧‧抗反射膜3‧‧‧Anti-reflective film

4‧‧‧受光面電極4‧‧‧Photon surface electrode

5‧‧‧集電用電極5‧‧‧Electrical electrodes

6‧‧‧輸出取出電極6‧‧‧Output electrode

7‧‧‧p+ 型擴散層7‧‧‧p + diffusion layer

8‧‧‧受光面集電用電極8‧‧‧Accepting the surface of the light collecting electrode

9‧‧‧通孔電極9‧‧‧through hole electrode

10、11‧‧‧背面電極10, 11‧‧‧ back electrode

12‧‧‧n型矽基板12‧‧‧n type test substrate

13‧‧‧抗反射膜13‧‧‧Anti-reflective film

圖1是表示本發明的矽系太陽電池元件的一例的概略剖面圖。Fig. 1 is a schematic cross-sectional view showing an example of a lanthanide solar cell element of the present invention.

圖2是表示本發明的矽系太陽電池元件的受光面的一例的概略平面圖。2 is a schematic plan view showing an example of a light receiving surface of a lanthanide solar cell element of the present invention.

圖3是表示本發明的矽系太陽電池元件的背面的一例的概略平面圖。3 is a schematic plan view showing an example of a back surface of a lanthanide solar cell element of the present invention.

圖4是表示本發明的反向接觸型太陽電池元件的背面 側電極構造的一例的概略平面圖。Figure 4 is a rear view showing the reverse contact type solar cell element of the present invention. A schematic plan view of an example of a side electrode structure.

圖5是表示本發明的反向接觸型太陽電池元件的圖4中的AA剖面構成的一例的概略立體圖。FIG. 5 is a schematic perspective view showing an example of a cross-sectional configuration of AA of FIG. 4 in the reverse contact solar cell element of the present invention.

圖6是表示本發明的反向接觸型太陽電池元件的圖4中的AA剖面構成的一例的概略立體圖。FIG. 6 is a schematic perspective view showing an example of a cross-sectional configuration of AA of FIG. 4 in the reverse contact solar cell element of the present invention.

圖7是表示本發明的反向接觸型太陽電池元件的圖4中的AA剖面構成的一例的概略立體圖。FIG. 7 is a schematic perspective view showing an example of a configuration of a cross-sectional view taken along line AA of FIG. 4 of the reverse contact solar cell element of the present invention.

1‧‧‧半導體基板1‧‧‧Semiconductor substrate

2‧‧‧n+ 型擴散層2‧‧‧n + type diffusion layer

3‧‧‧抗反射膜3‧‧‧Anti-reflective film

4‧‧‧受光面電極4‧‧‧Photon surface electrode

5‧‧‧集電用電極5‧‧‧Electrical electrodes

6‧‧‧輸出取出電極6‧‧‧Output electrode

7‧‧‧p+ 型擴散層7‧‧‧p + diffusion layer

Claims (10)

一種太陽電池元件,其具有對被賦予至矽基板上的電極用膠組成物進行煅燒而形成的電極,上述電極用膠組成物包含:含有磷的銅合金粒子、含有錫的粒子、玻璃粒子、溶劑、以及樹脂,上述電極包含Cu-Sn合金相及Sn-P-O玻璃相。 A solar cell element comprising an electrode formed by calcining an electrode composition applied to an electrode on a substrate, wherein the electrode composition comprises: copper alloy particles containing phosphorus, particles containing tin, glass particles, The solvent and the resin, the electrode includes a Cu-Sn alloy phase and a Sn-PO glass phase. 如申請專利範圍第1項所述之太陽電池元件,其中上述含有磷的銅合金粒子的磷含有率為6質量%以上、8質量%以下。 The solar cell element according to the first aspect of the invention, wherein the phosphorus-containing copper alloy particles have a phosphorus content of 6 mass% or more and 8 mass% or less. 如申請專利範圍第1項或第2項所述之太陽電池元件,其中上述含有錫的粒子是選自錫粒子及錫含有率為1質量%以上的錫合金粒子中的至少1種。 The solar cell element according to the first or second aspect of the invention, wherein the tin-containing particles are at least one selected from the group consisting of tin particles and tin alloy particles having a tin content of 1% by mass or more. 如申請專利範圍第1項所述之太陽電池元件,其中上述玻璃粒子的玻璃軟化點為650℃以下,結晶化起始溫度超過650℃。 The solar cell element according to claim 1, wherein the glass particles have a glass softening point of 650 ° C or less and a crystallization starting temperature of more than 650 ° C. 如申請專利範圍第1項所述之太陽電池元件,其中將上述含有磷的銅合金粒子與上述含有錫的粒子的總含有率設為100質量%時的上述含有錫的粒子的含有率為5質量%以上、70質量%以下。 The solar cell element according to the first aspect of the invention, wherein the content of the tin-containing particles when the total content of the phosphorus-containing copper alloy particles and the tin-containing particles is 100% by mass is 5 The mass% or more and 70% by mass or less. 如申請專利範圍第1項所述之太陽電池元件,其中上述電極用膠組成物更包含銀粒子。 The solar cell element according to claim 1, wherein the electrode composition for an electrode further comprises silver particles. 如申請專利範圍第6項所述之太陽電池元件,其中將上述含有磷的銅合金粒子、上述含有錫的粒子及上述銀粒子的總含有率設為100質量%時的上述銀粒子的含有率 為0.1質量%以上、10質量%以下。 The solar cell element according to claim 6, wherein the content ratio of the silver particles when the total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is 100% by mass is 100% by mass. It is 0.1% by mass or more and 10% by mass or less. 如申請專利範圍第6項或第7項所述之太陽電池元件,其中上述含有磷的銅合金粒子、含有錫的粒子及銀粒子的總含有率為70質量%以上、94質量%以下,上述玻璃粒子的含有率為0.1質量%以上、10質量%以下,上述溶劑及上述樹脂的總含有率為3質量%以上、29.9質量%以下。 The solar cell element according to the sixth aspect or the seventh aspect, wherein the total content of the phosphorus-containing copper alloy particles, the tin-containing particles, and the silver particles is 70% by mass or more and 94% by mass or less. The content of the glass particles is 0.1% by mass or more and 10% by mass or less, and the total content of the solvent and the resin is 3% by mass or more and 29.9% by mass or less. 如申請專利範圍第1項所述之太陽電池元件,其中上述Sn-P-O玻璃相配置在上述Cu-Sn合金相與上述矽基板之間。 The solar cell element according to claim 1, wherein the Sn-P-O glass phase is disposed between the Cu-Sn alloy phase and the tantalum substrate. 一種太陽電池,其包括:如申請專利範圍第1項至第9項中任一項所述之太陽電池元件、及配置於上述太陽電池元件的電極上的接合線。 A solar cell comprising: the solar cell element according to any one of claims 1 to 9; and a bonding wire disposed on an electrode of the solar cell element.
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5120477B2 (en) * 2011-04-07 2013-01-16 日立化成工業株式会社 Electrode paste composition and solar cell
US9224517B2 (en) 2011-04-07 2015-12-29 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
JP2012227183A (en) * 2011-04-14 2012-11-15 Hitachi Chem Co Ltd Paste composition for electrode, and solar cell element
JP5772174B2 (en) * 2011-04-14 2015-09-02 日立化成株式会社 ELEMENT, SOLAR CELL, AND ELECTRODE PASTE COMPOSITION
JP5720393B2 (en) * 2011-04-14 2015-05-20 日立化成株式会社 Electrode paste composition, solar cell element and solar cell
CN103688365B (en) * 2011-07-25 2016-09-28 日立化成株式会社 Element and solaode
JP2014093491A (en) * 2012-11-06 2014-05-19 Hitachi Chemical Co Ltd Solar cell element and process of manufacturing the same, and solar cell
JP2014103221A (en) * 2012-11-19 2014-06-05 Hitachi Chemical Co Ltd Electrode connection set, solar battery manufacturing method, solar battery, and solar battery module
JP2014103220A (en) * 2012-11-19 2014-06-05 Hitachi Chemical Co Ltd Solar battery and solar battery module
CN104021836B (en) * 2013-02-28 2017-02-01 比亚迪股份有限公司 Metal wire for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell assembly
TWI574450B (en) * 2013-05-13 2017-03-11 日立化成股份有限公司 Composition for forming electrode, photovoltaic cell element and manufacturing method thereof, photovoltaic cell and manufacturing method thereof
JP6206491B2 (en) * 2013-05-13 2017-10-04 日立化成株式会社 Electrode forming composition, solar cell element and solar cell
CN104733546A (en) * 2013-12-19 2015-06-24 日立化成株式会社 Solar cell and solar cell module
TWI634668B (en) * 2013-12-19 2018-09-01 日商日立化成股份有限公司 Photovoltaic cell and photovoltaic cell module
JP5766336B1 (en) * 2014-06-16 2015-08-19 株式会社マテリアル・コンセプト Copper paste firing method
JP5958526B2 (en) * 2014-11-26 2016-08-02 日立化成株式会社 ELEMENT, SOLAR CELL, AND ELECTRODE PASTE COMPOSITION
JP2015130355A (en) * 2015-02-16 2015-07-16 日立化成株式会社 Paste composition for electrode, and solar cell element
JP6433351B2 (en) * 2015-03-19 2018-12-05 株式会社ノリタケカンパニーリミテド Coated copper powder, copper paste, and copper conductor film
KR101955759B1 (en) * 2016-06-23 2019-03-07 삼성에스디아이 주식회사 Composition for forming p-type solar cell electrode, electrode prepared and p-type solar cell prepared by using the same
CN106024101B (en) * 2016-08-05 2017-08-01 洛阳布鲁姆电子科技有限公司 A kind of composite conductive ceramic slurry and preparation method thereof
CN106128551A (en) * 2016-08-30 2016-11-16 乐凯特科技铜陵有限公司 A kind of high efficiency water runs through wiring board conductive silver paste and preparation method thereof
JP6879035B2 (en) * 2017-04-28 2021-06-02 住友金属鉱山株式会社 Conductive composition, method of manufacturing conductors, and method of forming wiring for electronic components
JP2017163161A (en) * 2017-06-07 2017-09-14 日立化成株式会社 Solar cell and solar cell module
CN110246606A (en) * 2019-06-21 2019-09-17 广州市儒兴科技开发有限公司 The electrocondution slurry that a kind of high-performance organic carrier and preparation method thereof is applied with it
JP7487471B2 (en) * 2019-12-13 2024-05-21 株式会社レゾナック Metal paste, conductor, and substrate having through-electrode and method for manufacturing same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110232A (en) * 1999-10-13 2001-04-20 Murata Mfg Co Ltd Conductive paste and semiconductor ceramic electronic parts
US20040061096A1 (en) * 2002-09-26 2004-04-01 Kouichi Urano Resistive composition, resistor using the same, and making method thereof
TW200632133A (en) * 2005-01-25 2006-09-16 Sekisui Chemical Co Ltd Electrically conductive fine particles and anisotropic electrically conductive material
JP2009146890A (en) * 2007-11-20 2009-07-02 Hitoshi Arai Copper conductive paste in which low-temperature baking out is possible
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell
TW201105600A (en) * 2009-03-27 2011-02-16 Hitachi Powdered Metals Glass composition, electrically conductive paste composition comprising same, electrode wiring member, and electronic component

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457762A (en) * 1987-08-28 1989-03-06 Kyocera Corp Photoelectric converting device
JP2754100B2 (en) * 1991-07-25 1998-05-20 シャープ株式会社 Solar cell manufacturing method
JPH05159621A (en) * 1991-12-10 1993-06-25 Matsushita Electric Ind Co Ltd Conductive paste
JP3050064B2 (en) 1994-11-24 2000-06-05 株式会社村田製作所 CONDUCTIVE PASTE, SOLAR CELL WITH GRID ELECTRODE FORMED FROM THE CONDUCTIVE PASTE AND METHOD FOR MANUFACTURING SAME
JPH1162859A (en) * 1997-08-07 1999-03-05 Zexel Corp Transversely installed scroll compressor
JPH11162859A (en) * 1997-11-28 1999-06-18 Canon Inc Liquid phase growth of silicon crystal and manufacture of solar battery using the same
JP2000277768A (en) 1999-03-25 2000-10-06 Kyocera Corp Method of forming solar battery
JP2004217952A (en) 2003-01-09 2004-08-05 Mitsui Mining & Smelting Co Ltd Surface-treated copper powder, method for manufacturing surface-treated copper powder, and electroconductive paste using the surface-treated copper powder
JP4868716B2 (en) 2004-04-28 2012-02-01 三井金属鉱業株式会社 Flake copper powder and conductive paste
US7494607B2 (en) 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
JP5156328B2 (en) * 2007-10-18 2013-03-06 福田金属箔粉工業株式会社 Copper alloy powder for conductive material paste
JP4709238B2 (en) 2008-02-08 2011-06-22 株式会社日立製作所 Cu-based wiring material and electronic component using the same
JP2010059469A (en) * 2008-09-03 2010-03-18 Asahi Glass Co Ltd Method for producing copper nanoparticle, metal paste and article having metal film
JP2010161331A (en) * 2008-12-12 2010-07-22 Hitachi Ltd Electrode, electrode paste, and electronic component using same
JP5353282B2 (en) * 2009-02-12 2013-11-27 信越化学工業株式会社 Solar cell
JP5319492B2 (en) 2009-10-22 2013-10-16 日本ユニシス株式会社 Shape complementing apparatus and method based on deformation of steel sheet
JP2012227183A (en) * 2011-04-14 2012-11-15 Hitachi Chem Co Ltd Paste composition for electrode, and solar cell element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001110232A (en) * 1999-10-13 2001-04-20 Murata Mfg Co Ltd Conductive paste and semiconductor ceramic electronic parts
US20040061096A1 (en) * 2002-09-26 2004-04-01 Kouichi Urano Resistive composition, resistor using the same, and making method thereof
TW200632133A (en) * 2005-01-25 2006-09-16 Sekisui Chemical Co Ltd Electrically conductive fine particles and anisotropic electrically conductive material
US20100096014A1 (en) * 2006-12-25 2010-04-22 Hideyo Iida Conductive paste for solar cell
JP2009146890A (en) * 2007-11-20 2009-07-02 Hitoshi Arai Copper conductive paste in which low-temperature baking out is possible
TW201105600A (en) * 2009-03-27 2011-02-16 Hitachi Powdered Metals Glass composition, electrically conductive paste composition comprising same, electrode wiring member, and electronic component

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