TWI500082B - 具可傾斜頂置ｒｆ感應源之電漿反應器 - Google Patents
具可傾斜頂置ｒｆ感應源之電漿反應器 Download PDFInfo
- Publication number
- TWI500082B TWI500082B TW102123665A TW102123665A TWI500082B TW I500082 B TWI500082 B TW I500082B TW 102123665 A TW102123665 A TW 102123665A TW 102123665 A TW102123665 A TW 102123665A TW I500082 B TWI500082 B TW I500082B
- Authority
- TW
- Taiwan
- Prior art keywords
- support plate
- housing
- plasma reactor
- floating support
- chamber
- Prior art date
Links
- 230000001939 inductive effect Effects 0.000 title description 2
- 238000009826 distribution Methods 0.000 claims description 25
- 238000005096 rolling process Methods 0.000 claims description 17
- 230000033001 locomotion Effects 0.000 claims description 8
- 125000006850 spacer group Chemical group 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101710162453 Replication factor A Proteins 0.000 description 1
- 102100035729 Replication protein A 70 kDa DNA-binding subunit Human genes 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23971109P | 2009-09-03 | 2009-09-03 | |
| US12/787,198 US8414736B2 (en) | 2009-09-03 | 2010-05-25 | Plasma reactor with tiltable overhead RF inductive source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201342470A TW201342470A (zh) | 2013-10-16 |
| TWI500082B true TWI500082B (zh) | 2015-09-11 |
Family
ID=43623091
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102123665A TWI500082B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
| TW099119957A TWI446440B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099119957A TWI446440B (zh) | 2009-09-03 | 2010-06-18 | 具可傾斜頂置ｒｆ感應源之電漿反應器 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8414736B2 (cg-RX-API-DMAC7.html) |
| JP (2) | JP5705224B2 (cg-RX-API-DMAC7.html) |
| KR (2) | KR101445156B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN102576672B (cg-RX-API-DMAC7.html) |
| TW (2) | TWI500082B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2011028312A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9016289B2 (en) * | 2011-11-28 | 2015-04-28 | Intermolecular, Inc. | System and method for reducing particles and marks on wafer surface following reactor processing |
| TW201405627A (zh) * | 2012-07-20 | 2014-02-01 | Applied Materials Inc | 具有同軸ｒｆ饋送及同軸遮罩之對稱的感應性耦合電漿源 |
| CN103060778B (zh) * | 2013-01-23 | 2015-03-11 | 深圳市劲拓自动化设备股份有限公司 | 平板式pecvd装置 |
| US20140262044A1 (en) * | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Mu metal shield cover |
| KR102171725B1 (ko) | 2013-06-17 | 2020-10-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 반응기를 위한 강화된 플라즈마 소스 |
| US9184021B2 (en) | 2013-10-04 | 2015-11-10 | Applied Materials, Inc. | Predictive method of matching two plasma reactors |
| US9305748B2 (en) | 2013-10-04 | 2016-04-05 | Applied Materials, Inc. | Method of matching two or more plasma reactors |
| US10249475B2 (en) | 2014-04-01 | 2019-04-02 | Applied Materials, Inc. | Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation |
| JP6602887B2 (ja) * | 2015-03-19 | 2019-11-06 | マットソン テクノロジー インコーポレイテッド | プラズマ処理チャンバ内のエッチングプロセスのアジマス方向の均質性の制御 |
| JP5977853B1 (ja) * | 2015-03-20 | 2016-08-24 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| JP6424120B2 (ja) * | 2015-03-23 | 2018-11-14 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
| US10032604B2 (en) | 2015-09-25 | 2018-07-24 | Applied Materials, Inc. | Remote plasma and electron beam generation system for a plasma reactor |
| WO2018152142A1 (en) * | 2017-02-20 | 2018-08-23 | Mattson Technology, Inc. | Temperature control using temperature control element coupled to faraday shield |
| US10190216B1 (en) * | 2017-07-25 | 2019-01-29 | Lam Research Corporation | Showerhead tilt mechanism |
| KR102309660B1 (ko) * | 2019-11-21 | 2021-10-07 | 주식회사 유진테크 | 기판 처리 장치 |
| US12410519B2 (en) * | 2020-06-23 | 2025-09-09 | Lam Research Corporation | Automated showerhead tilt adjustment |
| WO2022094350A1 (en) * | 2020-10-29 | 2022-05-05 | Board Of Regents, The University Of Texas System | Equipment and process technologies for catalyst influenced chemical etching |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
| US20010022157A1 (en) * | 1999-04-09 | 2001-09-20 | Shin Eun-Hee | Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield |
| US20070181257A1 (en) * | 2002-08-30 | 2007-08-09 | Lam Research Corporation | Faraday Shield Disposed Within An Inductively Coupled Plasma Etching apparatus |
| US20070256787A1 (en) * | 2006-05-03 | 2007-11-08 | Applied Materials, Inc. | Plasma reactor with a dynamically adjustable plasma source power applicator |
| US20080171444A1 (en) * | 2007-01-17 | 2008-07-17 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| US20090159425A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Method of correcting baseline skew by a novel motorized source coil assembly |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5387288A (en) * | 1993-05-14 | 1995-02-07 | Modular Process Technology Corp. | Apparatus for depositing diamond and refractory materials comprising rotating antenna |
| US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
| US6229264B1 (en) * | 1999-03-31 | 2001-05-08 | Lam Research Corporation | Plasma processor with coil having variable rf coupling |
| US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| JP3462865B2 (ja) * | 2001-07-10 | 2003-11-05 | 三菱重工業株式会社 | 給電アンテナ及び半導体製造装置 |
| JP3969081B2 (ja) | 2001-12-14 | 2007-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2003234293A (ja) | 2002-02-06 | 2003-08-22 | Canon Inc | ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法 |
| JP2004172243A (ja) * | 2002-11-19 | 2004-06-17 | Nec Kansai Ltd | ドライエッチング装置 |
| US7713432B2 (en) * | 2004-10-04 | 2010-05-11 | David Johnson | Method and apparatus to improve plasma etch uniformity |
| KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
| US7504041B2 (en) * | 2006-05-03 | 2009-03-17 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator |
| US7829815B2 (en) * | 2006-09-22 | 2010-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable electrodes and coils for plasma density distribution control |
| US8223470B2 (en) * | 2006-10-10 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method to improve uniformity and reduce local effect of process chamber |
| US8999106B2 (en) * | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
-
2010
- 2010-05-25 US US12/787,198 patent/US8414736B2/en active Active
- 2010-06-11 KR KR1020127008338A patent/KR101445156B1/ko active Active
- 2010-06-11 WO PCT/US2010/038286 patent/WO2011028312A1/en not_active Ceased
- 2010-06-11 KR KR1020137017437A patent/KR101668587B1/ko active Active
- 2010-06-11 JP JP2012527874A patent/JP5705224B2/ja active Active
- 2010-06-11 CN CN201080039319.5A patent/CN102576672B/zh active Active
- 2010-06-11 CN CN201310360195.6A patent/CN103426711B/zh active Active
- 2010-06-18 TW TW102123665A patent/TWI500082B/zh active
- 2010-06-18 TW TW099119957A patent/TWI446440B/zh not_active IP Right Cessation
-
2013
- 2013-03-04 US US13/783,776 patent/US9330887B2/en active Active
- 2013-05-26 JP JP2013110459A patent/JP5789281B2/ja active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5280154A (en) * | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
| US20010022157A1 (en) * | 1999-04-09 | 2001-09-20 | Shin Eun-Hee | Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield |
| US20070181257A1 (en) * | 2002-08-30 | 2007-08-09 | Lam Research Corporation | Faraday Shield Disposed Within An Inductively Coupled Plasma Etching apparatus |
| US20070256787A1 (en) * | 2006-05-03 | 2007-11-08 | Applied Materials, Inc. | Plasma reactor with a dynamically adjustable plasma source power applicator |
| US20080171444A1 (en) * | 2007-01-17 | 2008-07-17 | Lam Research Corporation | Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor |
| US20090159425A1 (en) * | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Method of correcting baseline skew by a novel motorized source coil assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102576672A (zh) | 2012-07-11 |
| JP5789281B2 (ja) | 2015-10-07 |
| CN103426711A (zh) | 2013-12-04 |
| KR101668587B1 (ko) | 2016-10-24 |
| TW201126595A (en) | 2011-08-01 |
| TW201342470A (zh) | 2013-10-16 |
| JP2013211580A (ja) | 2013-10-10 |
| KR101445156B1 (ko) | 2014-09-29 |
| US9330887B2 (en) | 2016-05-03 |
| TWI446440B (zh) | 2014-07-21 |
| US20110048644A1 (en) | 2011-03-03 |
| CN103426711B (zh) | 2016-04-27 |
| KR20120073260A (ko) | 2012-07-04 |
| CN102576672B (zh) | 2015-06-17 |
| US20130206594A1 (en) | 2013-08-15 |
| JP2013504159A (ja) | 2013-02-04 |
| WO2011028312A1 (en) | 2011-03-10 |
| US8414736B2 (en) | 2013-04-09 |
| KR20130083489A (ko) | 2013-07-22 |
| JP5705224B2 (ja) | 2015-04-22 |
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