TWI499696B - Pretreating agent for electroplating, pretreatment method for electroplating, and electroplating method - Google Patents

Pretreating agent for electroplating, pretreatment method for electroplating, and electroplating method Download PDF

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TWI499696B
TWI499696B TW100106819A TW100106819A TWI499696B TW I499696 B TWI499696 B TW I499696B TW 100106819 A TW100106819 A TW 100106819A TW 100106819 A TW100106819 A TW 100106819A TW I499696 B TWI499696 B TW I499696B
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electroplating
pretreatment
substrate
copper
pretreatment agent
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TW100106819A
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TW201144488A (en
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Masayuki Utsumi
Naoyuki Omura
Takuya Okamachi
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Uyemura C & Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/30Electroplating: Baths therefor from solutions of tin
    • C25D3/32Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated

Description

電鍍用預處理劑,電鍍用預處理方法,以及電鍍方法Pretreatment agent for electroplating, pretreatment method for electroplating, and electroplating method

本發明係關於電鍍用預處理劑和電鍍用預處理方法,其較佳用於印刷電路板(特別是用以形成電路的光阻劑(墨或乾膜)施用於銅層上者)之預處理,及亦係關於電鍍方法。The present invention relates to a pretreatment agent for electroplating and a pretreatment method for electroplating, which is preferably used for a printed circuit board (particularly, a photoresist (ink or dry film) for forming a circuit is applied to a copper layer) Treatment, and also related to the plating method.

印刷電路板包括雙面印刷電路板和多層印刷電路板,其中通路孔和穿通孔用以形成層間的電路。通路孔和穿通孔進行無電銅鍍以形成層間的連接,而光阻層形成於基板表面上以形成電路。之後,基板經預處理,並進行電解銅鍍,以確保銅膜具有作為導電物所須的銅厚度。The printed circuit board includes a double-sided printed circuit board and a multilayer printed circuit board in which via holes and through vias are used to form interlayer circuits. The via hole and the via hole are subjected to electroless copper plating to form an interlayer connection, and the photoresist layer is formed on the surface of the substrate to form an electrical circuit. Thereafter, the substrate is pretreated and electrolytic copper plating is performed to ensure that the copper film has a copper thickness as a conductive material.

光阻劑特別設計成可在鹼條件下剝離者。因此,銅電鍍之預處理中使用的預處理劑大多為中性或酸性,特別是酸性。通常,現有的酸性預處理劑含有界面活性劑和無機酸或有機酸。酸性預處理劑通常用以在進行電解銅鍍之前,賦予通路孔(via hole)和穿通孔(through-hole)潤濕性或自銅或銅合金表面移除塵或浮渣。The photoresist is specifically designed to be stripped under alkaline conditions. Therefore, the pretreatment agents used in the pretreatment of copper plating are mostly neutral or acidic, especially acidic. Typically, existing acidic pretreatment agents contain a surfactant and an inorganic or organic acid. Acidic pretreatment agents are typically used to impart to or through-hole wettability or to remove dust or scum from the copper or copper alloy surface prior to electrolytic copper plating.

取決於光阻劑之顯影中之化學品、清潔、不均勻乾燥等,用以形成電路的基板銅膜(無電銅鍍膜或銅箔)進行表面氧化反應,所得氧化物損及電解銅鍍膜和基板銅層之間的黏著性。Depending on the chemical in the development of the photoresist, cleaning, uneven drying, etc., the substrate copper film (electroless copper plating film or copper foil) used to form the circuit is subjected to surface oxidation reaction, and the resulting oxide damages the electrolytic copper plating film and the substrate. Adhesion between copper layers.

認為現有酸性預處理劑對於銅表面上的氧化物膜之清潔效果薄弱。因此,欲得到較佳清潔效果,對於開發強力移除氧化物膜的預處理劑有需求存在。但是,過強的清潔會使得基板銅和光阻劑之間的黏著性變差,可能導致光阻劑剝離。It is considered that the existing acidic pretreatment agent has a weak cleaning effect on the oxide film on the copper surface. Therefore, in order to obtain a better cleaning effect, there is a demand for developing a pretreatment agent for strongly removing an oxide film. However, excessive cleaning may deteriorate the adhesion between the substrate copper and the photoresist, which may cause the photoresist to peel off.

此外,關於本發明之相關技術參考資料包括日本專利案第2604632號、JP-A H3-191077、JP-A 2001-089882、日本專利案第4208826號、JP-A 2009-132967、JP-A H10-212593、JP-A 2005-113162、日本專利案第4090951號、JP-A 2005-333104、和JP-A 2000-104177。Further, the related art reference materials related to the present invention include Japanese Patent No. 2,604,632, JP-A H3-191077, JP-A 2001-089882, Japanese Patent No. 4208826, JP-A 2009-132967, JP-A H10 -212593, JP-A 2005-113162, Japanese Patent No. 4409951, JP-A 2005-333104, and JP-A 2000-104177.

因此,對於不會損及基板銅和光阻劑之間之黏著性及基板銅和電解銅鍍膜之間之黏著性之用於電鍍的預處理劑有需求存在,且對於使用預處理劑的電鍍用預處理方法及使用預處理方法的電鍍方法也有需求存在。Therefore, there is a need for a pretreatment agent for electroplating which does not impair the adhesion between the substrate copper and the photoresist and the adhesion between the substrate copper and the electrolytic copper plating film, and is used for electroplating using a pretreatment agent. There are also needs for pretreatment methods and electroplating methods using pretreatment methods.

為滿足前述需求,本發明者進行充分和廣泛的研究。作為他們的研究成果,本發明者發現,在沖洗光阻劑的組份對黏著性造成顯著不良影響之前,對於前述黏著性的不良影響極微的抗吸附劑組份吸附在基板表面,並於之後進行不致於太強烈的清潔,以代替視為必須的強烈清潔時,能夠滿足前述需求。基於此發現,完成本發明。In order to satisfy the foregoing needs, the inventors conducted sufficient and extensive research. As a result of their research, the inventors have found that the anti-adsorbent component having a slight adverse effect on the aforementioned adhesion is adsorbed on the surface of the substrate before the component of the rinse photoresist has a significant adverse effect on the adhesion, and thereafter The above requirements can be met when cleaning is not too strong, instead of being considered as essential for intense cleaning. Based on this finding, the present invention has been completed.

據此,本發明提供電鍍用預處理劑、電鍍用預處理方法、和電鍍方法,其特徵如下。Accordingly, the present invention provides a pretreatment agent for electroplating, a pretreatment method for electroplating, and a plating method, which are characterized as follows.

本發明之電鍍用預處理劑之特徵在於其包括含有下列基礎組份之水溶液:The pretreatment agent for electroplating of the present invention is characterized in that it comprises an aqueous solution containing the following basic components:

(A)至少一種抗吸附劑,選自三唑化合物、吡唑化合物、咪唑化合物、陽離子界面活性劑和兩性離子界面活性劑;和(A) at least one anti-adsorbent selected from the group consisting of a triazole compound, a pyrazole compound, an imidazole compound, a cationic surfactant, and a zwitterionic surfactant;

(B)氯離子。(B) Chloride ion.

該電鍍用預處理劑中,較佳地,該組份(A)係選自陽離子界面活性劑和兩性離子界面活性劑中之至少一者。更佳地,該組份(A)係兩性離子界面活性劑。In the pretreatment agent for electroplating, preferably, the component (A) is at least one selected from the group consisting of a cationic surfactant and a zwitterionic surfactant. More preferably, the component (A) is a zwitterionic surfactant.

此外,該電鍍用預處理劑中,較佳地,該水溶液另含有(C)非離子界面活性劑。Further, in the pretreatment agent for electroplating, preferably, the aqueous solution further contains (C) a nonionic surfactant.

該電鍍用預處理劑中,較佳地,該水溶液另含有(D)選自水溶性醚、胺、醇、二醇醚、酮、酯、和脂肪酸中之至少一種溶劑。更佳地,該組份(D)包含選自水溶性醚、醇、酮、酯、和脂肪酸中之至少一種溶劑。In the pretreatment agent for electroplating, preferably, the aqueous solution further contains (D) at least one solvent selected from the group consisting of water-soluble ethers, amines, alcohols, glycol ethers, ketones, esters, and fatty acids. More preferably, the component (D) comprises at least one solvent selected from the group consisting of water-soluble ethers, alcohols, ketones, esters, and fatty acids.

此外,該電鍍用預處理劑中,較佳地,該水溶液另含有(E)酸。Further, in the pretreatment agent for electroplating, preferably, the aqueous solution further contains (E) an acid.

該電鍍用預處理劑中,較佳地,該水溶液另含有(F)氧化劑。In the pretreatment agent for electroplating, preferably, the aqueous solution further contains (F) an oxidizing agent.

本發明之電鍍用預處理方法之特徵在於其包含將工件浸在前述電鍍用預處理劑中。The pretreatment method for electroplating of the present invention is characterized in that it comprises immersing the workpiece in the aforementioned pretreatment agent for electroplating.

該電鍍用預處理方法中,較佳地,將工件浸在前述電鍍用預處理劑中,同時進行超音波處理。或者,浸泡工件時,亦進行電解處理。In the pretreatment method for electroplating, preferably, the workpiece is immersed in the pretreatment agent for electroplating, and ultrasonic treatment is simultaneously performed. Alternatively, when the workpiece is immersed, electrolytic treatment is also performed.

本發明之電鍍方法之特徵在於使用前述電鍍用預處理方法。The plating method of the present invention is characterized by using the aforementioned pretreatment method for electroplating.

本發明之有利效果Advantageous effects of the present invention

本發明之電鍍用預處理劑不會損及基板銅和光阻劑之間的黏著性,也不會損及基板銅和電解銅鍍膜之間的黏著性。The pretreatment agent for electroplating of the present invention does not impair the adhesion between the substrate copper and the photoresist, and does not impair the adhesion between the substrate copper and the electrolytic copper plating film.

現在,下文將詳係描述本發明。The invention will now be described in detail below.

根據本發明之電鍍用預處理劑包括含有下列基礎組份之水溶液:The pretreatment agent for electroplating according to the present invention includes an aqueous solution containing the following basic components:

(A)至少一種抗吸附劑,選自三唑化合物、吡唑化合物、咪唑化合物、陽離子界面活性劑和兩性離子界面活性劑;和(A) at least one anti-adsorbent selected from the group consisting of a triazole compound, a pyrazole compound, an imidazole compound, a cationic surfactant, and a zwitterionic surfactant;

(B)氯離子。(B) Chloride ion.

(A)抗吸附劑(A) anti-adsorbent

本發明中的抗吸附劑(A)先吸附在金屬表面性,藉此用以限制沖洗光阻劑的組份吸附在金屬表面上。本發明中的此抗吸附劑(A)係三唑化合物、吡唑化合物、咪唑化合物、陽離子界面活性劑和兩性離子界面活性劑,其可單獨使用或其中的二或更多者併用。本發明之組份(A)的分子量(聚合物的情況中,是指重量平均分子量)較佳至多1,000,特別在60至900的範圍內。The anti-adsorbent (A) in the present invention is first adsorbed on the surface of the metal, thereby limiting the adsorption of the component of the rinse photoresist on the metal surface. The anti-adsorbent (A) in the present invention is a triazole compound, a pyrazole compound, an imidazole compound, a cationic surfactant, and a zwitterionic surfactant, which may be used singly or in combination of two or more thereof. The molecular weight of the component (A) of the present invention (in the case of a polymer means a weight average molecular weight) is preferably at most 1,000, particularly in the range of from 60 to 900.

三唑化合物的特定例子包括三唑、苯并三唑、甲基苯并三唑、胺基三唑、胺基苯并三唑、和羥基苯并三唑。吡唑化合物的特定例子包括吡唑、二甲基吡唑、苯基吡唑、甲基苯基吡唑、和胺基吡唑。咪唑化合物的特定例子包括咪唑、甲基咪唑、和苯基咪唑。Specific examples of the triazole compound include triazole, benzotriazole, methylbenzotriazole, aminotriazole, aminobenzotriazole, and hydroxybenzotriazole. Specific examples of the pyrazole compound include pyrazole, dimethylpyrazole, phenylpyrazole, methylphenylpyrazole, and aminopyrazole. Specific examples of the imidazole compound include imidazole, methylimidazole, and phenylimidazole.

陽離子界面活性劑的例子包括烷基三甲銨型、二烷基二甲銨型、三烷基甲銨型、四烷基銨型、苄基型、吡錠型、二銨型、或胺鹽型。兩性離子界面活性劑的例子包括胺氧化物型、甜菜鹼型、咪唑啉型、胺基二醋酸型、苯胺型、甘油型、硫酸酯型、磺酸酯型、或磷酸酯型。Examples of the cationic surfactant include an alkyltrimethylammonium type, a dialkyldimethylammonium type, a trialkylmethylammonium type, a tetraalkylammonium type, a benzyl type, a pyridinium type, a diammonium type, or an amine salt type. . Examples of the zwitterionic surfactant include an amine oxide type, a betaine type, an imidazoline type, an aminodiacetic acid type, an aniline type, a glycerin type, a sulfate type, a sulfonate type, or a phosphate type.

使用三唑化合物、吡唑化合物或咪唑化合物作為本發明的組份(A)時,其濃度較佳為0.01至200克/升,特別是0.05至10克/升。若濃度低於0.01克/升,則吸附量過少,無法成功地得到本發明的效果。另一方面,若濃度超過200克/升,則造成光阻劑剝離,且經濟性降低。When the triazole compound, the pyrazole compound or the imidazole compound is used as the component (A) of the present invention, the concentration thereof is preferably from 0.01 to 200 g/liter, particularly from 0.05 to 10 g/liter. If the concentration is less than 0.01 g/liter, the amount of adsorption is too small, and the effects of the present invention cannot be obtained successfully. On the other hand, if the concentration exceeds 200 g/liter, the photoresist is peeled off and the economy is lowered.

使用陽離子界面活性劑或兩性離子界面活性劑作為本發明的組份(A)時,其濃度較佳為0.01至200克/升,特別是0.5至10克/升。若濃度低於0.01克/升,則吸附量過少,無法成功地得到本發明的效果。另一方面,若濃度超過200克/升,則造成光阻劑剝離,且經濟性降低。此外,可以使用市售品作為陽離子界面活性劑和兩性離子界面活性劑。When a cationic surfactant or a zwitterionic surfactant is used as the component (A) of the present invention, the concentration thereof is preferably from 0.01 to 200 g/liter, particularly from 0.5 to 10 g/liter. If the concentration is less than 0.01 g/liter, the amount of adsorption is too small, and the effects of the present invention cannot be obtained successfully. On the other hand, if the concentration exceeds 200 g/liter, the photoresist is peeled off and the economy is lowered. Further, a commercially available product can be used as the cationic surfactant and the zwitterionic surfactant.

(B)氯離子(B) chloride ion

本發明的氯離子(B)吸附在列入考量的金屬晶粒周圍,藉此用以促進金屬表面之清潔效能的均勻性。用以供應氯離子的化合物的例子包括氫氯酸、氯化銨、氯化鈉、氯化鉀、含有氯離子的陽離子界面活性劑(含括陽離子染料)、和氧氯化物,但不在此限。此外,用以供應氯離子的化合物可以單獨使用或二或更多者併用。The chloride ion (B) of the present invention is adsorbed around the metal grains considered to promote the uniformity of the cleaning performance of the metal surface. Examples of the compound for supplying chloride ions include hydrochloric acid, ammonium chloride, sodium chloride, potassium chloride, a cationic surfactant containing a chloride ion (including a cationic dye), and an oxychloride, but not limited thereto. . Further, the compound for supplying chloride ions may be used singly or in combination of two or more.

氯離子在根據本發明之預處理劑中之濃度較佳為0.01至200克/升,特別是0.04至100克/升,更特別是0.2至50克/升。若濃度低於0.01克/升,則無法得到所欲清潔效果。另一方面,若濃度超過200克/升,則造成基板銅失去光澤,且經濟性降低。The concentration of chloride ions in the pretreatment agent according to the invention is preferably from 0.01 to 200 g/l, especially from 0.04 to 100 g/l, more particularly from 0.2 to 50 g/l. If the concentration is less than 0.01 g/liter, the desired cleaning effect cannot be obtained. On the other hand, if the concentration exceeds 200 g/liter, the substrate copper is tarnished and the economy is lowered.

本發明中,組份(A)和(B)共同存在,其有效增進在下一步驟中進行之藉電鍍沉積的銅膜之黏著性。此效果源自於組份(A)限制了沖洗光阻劑的組份在金屬表面上之吸附及組份(B)有效清潔具有銅的基板表面,藉此增進銅-銅黏著性。In the present invention, the components (A) and (B) coexist, which effectively enhances the adhesion of the copper film deposited by electroplating performed in the next step. This effect is derived from the fact that component (A) limits the adsorption and composition of the components of the rinse photoresist on the metal surface and (B) effectively cleans the surface of the substrate having copper, thereby enhancing the copper-copper adhesion.

(C)非離子性界面活性劑(C) nonionic surfactant

根據本發明之預處理劑除了組份(A)和組份(B)以外,較佳含有(C)非離子界面活性劑。此非離子性界面活性劑能夠增進工件的潤濕性,藉此增進吸附效果和清潔效果。非離子性界面活性劑的例子包括烷基醚、烷基苯基醚、烷基胺、烷基醯胺、多羥基醇醚、脂肪酸酯、POE多羥基醇脂肪酸酯、多羥基醇脂肪酸酯、乙二醇、或平均HLB為10至18的聚環氧烷或聚環氧乙烷界面活性劑。可以使用市售品作為非離子性界面活性劑。The pretreatment agent according to the present invention preferably contains (C) a nonionic surfactant in addition to the component (A) and the component (B). This nonionic surfactant enhances the wettability of the workpiece, thereby enhancing the adsorption and cleaning effects. Examples of nonionic surfactants include alkyl ethers, alkylphenyl ethers, alkylamines, alkylguanamines, polyhydric alcohol ethers, fatty acid esters, POE polyhydric alcohol fatty acid esters, polyhydric alcohol fatty acids Ester, ethylene glycol, or a polyalkylene oxide or polyethylene oxide surfactant having an average HLB of 10 to 18. A commercially available product can be used as the nonionic surfactant.

使用此非離子性界面活性劑時,其濃度較佳為0.1至200克/升,特別是0.5至10克/升。若濃度低於0.1克/升,則無法得到所欲潤濕性。另一方面,若濃度超過200克/升,則造成光阻劑剝離,且經濟性降低。When this nonionic surfactant is used, its concentration is preferably from 0.1 to 200 g/liter, particularly from 0.5 to 10 g/liter. If the concentration is less than 0.1 g/liter, the desired wettability cannot be obtained. On the other hand, if the concentration exceeds 200 g/liter, the photoresist is peeled off and the economy is lowered.

此外,使用陽離子界面活性劑和兩性離子界面活性劑作為組份(A)時,若已確保足夠的潤濕性,則不須添加組份(C)。Further, when a cationic surfactant and a zwitterionic surfactant are used as the component (A), if sufficient wettability has been secured, it is not necessary to add the component (C).

(D)溶劑(D) solvent

除了前述成份以外,根據本發明之預處理劑較佳含有(D)溶劑。此溶劑可作為清潔基板銅的輔助劑。組份(D)溶劑的例子包括水溶性醚、胺、醇、二醇醚、酮、酯、和脂肪酸。特別地,較佳例子包括醚(如二噁烷、四氫呋喃等)、胺(如乙胺、乙醇胺、N-甲基-2-吡咯酮、N,N-二甲基甲醯胺等)、醇(如甲醇、乙醇、丙醇、乙二醇、丙二醇等)、乙醇醚(如乙基溶纖素、丁基溶纖素、二乙二醇一乙醚、三乙二醇一乙醚、丙二醇一乙醚等)、酮(如丙酮、丁酮、丁內酯等)、酯(如乙酸乙酯、乙酸丙酯、乙酸丁酯、乙酸酯溶纖素等)、和脂肪酸(如丙酸、丁酸、甲酸、乙酸、乳酸等)。此外,這些溶劑可以單獨使用或二或更多者併用。The pretreatment agent according to the present invention preferably contains (D) a solvent in addition to the aforementioned components. This solvent can be used as an auxiliary agent for cleaning the substrate copper. Examples of the component (D) solvent include water-soluble ethers, amines, alcohols, glycol ethers, ketones, esters, and fatty acids. In particular, preferred examples include ethers (e.g., dioxane, tetrahydrofuran, etc.), amines (e.g., ethylamine, ethanolamine, N-methyl-2-pyrrolidone, N,N-dimethylformamide, etc.), alcohols (such as methanol, ethanol, propanol, ethylene glycol, propylene glycol, etc.), ethanol ether (such as ethyl cellosolve, butyl cellosolve, diethylene glycol monoethyl ether, triethylene glycol monoethyl ether, propylene glycol monoethyl ether, etc.) , ketones (such as acetone, methyl ethyl ketone, butyrolactone, etc.), esters (such as ethyl acetate, propyl acetate, butyl acetate, acetate cellosolve, etc.), and fatty acids (such as propionic acid, butyric acid, formic acid) , acetic acid, lactic acid, etc.). Further, these solvents may be used singly or in combination of two or more.

添加溶劑時,其濃度較佳為0.01至200克/升,特別是0.1至50克/升。若濃度低於0.01克/升,則無法增進清潔效能。另一方面,若濃度超過200克/升,則造成光阻劑剝離,且經濟性降低。When the solvent is added, the concentration thereof is preferably from 0.01 to 200 g/liter, particularly from 0.1 to 50 g/liter. If the concentration is less than 0.01 g/liter, the cleaning performance cannot be improved. On the other hand, if the concentration exceeds 200 g/liter, the photoresist is peeled off and the economy is lowered.

(E)酸(E) acid

根據本發明之預處理劑除了前述組份以外,較佳含有(E)酸。此酸可增進存在於金屬上之氧化物膜的移除效果。此酸可為無機酸或有機酸。無機酸的例子包括硫酸、硝酸、氫氟酸、和磷酸。有機酸的例子包括檸檬酸、甲酸、乳酸、和烷基磺酸。這些酸可以單獨使用或二或更多者併用。The pretreatment agent according to the present invention preferably contains (E) an acid in addition to the aforementioned components. This acid enhances the removal effect of the oxide film present on the metal. This acid can be an inorganic or organic acid. Examples of the inorganic acid include sulfuric acid, nitric acid, hydrofluoric acid, and phosphoric acid. Examples of the organic acid include citric acid, formic acid, lactic acid, and alkylsulfonic acid. These acids may be used singly or in combination of two or more.

根據本發明之預處理劑含有此酸時,酸在預處理劑中之濃度較佳為0.1至200克/升,特別是1至100克/升。若濃度低於0.1克/升,則無法得到移除氧化物膜的效果。另一方面,若濃度超過200克/升,則造成光阻劑剝離,且經濟性降低。When the pretreatment agent according to the present invention contains the acid, the concentration of the acid in the pretreatment agent is preferably from 0.1 to 200 g/liter, particularly from 1 to 100 g/liter. If the concentration is less than 0.1 g/liter, the effect of removing the oxide film cannot be obtained. On the other hand, if the concentration exceeds 200 g/liter, the photoresist is peeled off and the economy is lowered.

此外,使用氫氯酸作為供應(B)氯離子的來源,或添加脂肪酸作為(D)溶劑,及若酸濃度在前述適當範圍內時,則不須添加組份(E)。Further, the use of hydrochloric acid as a source of (B) chloride ion or the addition of a fatty acid as the solvent (D), and if the acid concentration is within the above-mentioned appropriate range, it is not necessary to add the component (E).

(F)氧化劑(F) oxidant

根據本發明之預處理劑除了前述成份以外,較佳含有(F)氧化劑。此氧化劑可作為清潔基板銅的輔助劑。氧化劑的例子包括過氧化物、氯化鐵、氯化銅、和含水的過氧化氫,但不在此限。此外,此氧化劑可以單獨使用或二或更多者併用。The pretreatment agent according to the present invention preferably contains (F) an oxidizing agent in addition to the aforementioned components. This oxidizing agent can be used as an auxiliary agent for cleaning the substrate copper. Examples of the oxidizing agent include peroxide, ferric chloride, copper chloride, and aqueous hydrogen peroxide, but are not limited thereto. Further, the oxidizing agent may be used singly or in combination of two or more.

添加氧化劑時,其濃度較佳為0.01至200克/升,特別是1至50克/升。若濃度低於0.01克/升,則無法得到促進清潔的效果。另一方面,若濃度超過200克/升,則造成基板銅失去光澤,且經濟性降低。When the oxidizing agent is added, its concentration is preferably from 0.01 to 200 g/liter, particularly from 1 to 50 g/liter. If the concentration is less than 0.01 g/liter, the effect of promoting cleaning cannot be obtained. On the other hand, if the concentration exceeds 200 g/liter, the substrate copper is tarnished and the economy is lowered.

根據本發明之預處理劑適當地用於印刷電路板的基板銅層(無電銅鍍膜或銅箔)表面(其表面藉銅電鍍而形成銅膜)之預處理,該印刷電路板具有用以藉由藉銅電鍍而在基板銅層上形成電解銅鍍膜的方式形成電路的光阻劑(墨或乾膜)和光阻圖案。作為預處理方法,較佳地,採用的方法中,工件浸在根據本發明之預處理溶劑中。使用根據本發明之預處理劑進行電鍍用預處理時,處理溫度較佳為25至50℃,特別是30至45℃。若預處理溫度低於25℃,則清潔不足。另一方面,若溫度高於50℃,則發生光阻劑剝離的情況。The pretreatment agent according to the present invention is suitably used for pretreatment of a surface of a substrate copper layer (electroless copper plating film or copper foil) of a printed circuit board (the surface of which is formed by copper plating to form a copper film), the printed circuit board having A photoresist (ink or dry film) and a photoresist pattern of the circuit are formed by forming an electrolytic copper plating film on the copper layer of the substrate by copper plating. As a pretreatment method, preferably, in the method employed, the workpiece is immersed in the pretreatment solvent according to the present invention. When the pretreatment for electroplating is carried out using the pretreatment agent according to the present invention, the treatment temperature is preferably from 25 to 50 ° C, particularly from 30 to 45 ° C. If the pretreatment temperature is lower than 25 ° C, the cleaning is insufficient. On the other hand, if the temperature is higher than 50 ° C, peeling of the photoresist occurs.

此外,預處理較佳進行1至30分鐘,特別是2至10分鐘。若處理時間低於1分鐘,則無法得到足夠的清潔效果。另一方面,若時間超過30分鐘,則引發光阻劑之剝離。Further, the pretreatment is preferably carried out for 1 to 30 minutes, particularly 2 to 10 minutes. If the processing time is less than 1 minute, sufficient cleaning effect cannot be obtained. On the other hand, if the time exceeds 30 minutes, the peeling of the photoresist is initiated.

取決於光阻劑顯影步驟的水洗條件和乾燥的不均勻程度,形成於基板銅表面上的氧化物膜可能堅硬,且其損及基板銅和形成於其上的電解銅鍍膜之間的黏著性。此情況中,較佳地,在將工件浸在根據本發明之預處理劑的同時,進行超音波處理。超音波處理與預處理同時使用,可增進清潔效能。超音波處理可於26至42 kHz處理1至3分鐘。Depending on the water washing conditions of the photoresist development step and the degree of unevenness of the drying, the oxide film formed on the surface of the copper substrate may be hard, and it may damage the adhesion between the substrate copper and the electrolytic copper plating film formed thereon. . In this case, preferably, the ultrasonic treatment is performed while immersing the workpiece in the pretreatment agent according to the present invention. Ultrasonic processing is used in conjunction with pretreatment to improve cleaning performance. Ultrasonic processing can be performed at 26 to 42 kHz for 1 to 3 minutes.

基板銅表面上的氧化物膜堅硬且其損及基板銅和電解銅鍍膜之間之黏著性的情況中,亦可採用在將工件浸在根據本發明之預處理劑的同時,進行電解處理的方法。在預處理期間內一併進行電解處理可增進清潔效能。電解處理可藉直流電的陽離子電解進行,及使用銅或不銹鋼作為陰極,於0.1至5伏特或使用陽離子電流密度0.5至1安培/平方公寸進行1至3分鐘。In the case where the oxide film on the surface of the substrate copper is hard and the adhesion between the substrate copper and the electrolytic copper plating film is damaged, it is also possible to perform electrolytic treatment while immersing the workpiece in the pretreatment agent according to the present invention. method. Electrolysis treatment during the pretreatment period can improve cleaning performance. The electrolytic treatment can be carried out by direct current cation electrolysis, and using copper or stainless steel as a cathode, at 0.1 to 5 volts or using a cation current density of 0.5 to 1 ampere/square inch for 1 to 3 minutes.

根據本發明之電鍍方法中,藉使用根據本發明之預處理劑對工件預處理之後,進行電鍍。此電鍍方法適當地施用於銅電鍍。實施電鍍方法時,可以使用慣用的已知電鍍浴和電鍍條件。In the electroplating method according to the present invention, electroplating is performed after pretreating the workpiece by using the pretreatment agent according to the present invention. This plating method is suitably applied to copper plating. When the plating method is carried out, a conventional known plating bath and plating conditions can be used.

實例Instance

現在,將藉實例和比較例以特定方式描述本發明,但本發明不限於實例。Now, the present invention will be described in a specific manner by way of examples and comparative examples, but the invention is not limited to the examples.

使用藉由令光阻膜黏著於Panasonic Electric Works Co.,Ltd.製造的基板R-1705,得到的基板作為評估基板。使用Asahi Kasei E-materials Corp.製造的Sunfort(ADH252)或Hitachi Chemical Co.,Ltd.製造的Photec(RY-3525)作為光阻膜。線/空間設定為25微米/25微米,電解銅鍍膜的膜厚度設定為20微米。A substrate obtained by adhering a photoresist film to a substrate R-1705 manufactured by Panasonic Electric Works Co., Ltd. was used as an evaluation substrate. As a photoresist film, Sunfort (ADH252) manufactured by Asahi Kasei E-materials Corp. or Photec (RY-3525) manufactured by Hitachi Chemical Co., Ltd. was used. The line/space was set to 25 μm / 25 μm, and the film thickness of the electrolytic copper plating film was set to 20 μm.

實例1-24,比較例1-18Examples 1-24, Comparative Examples 1-18

以下面的表2至5中所示組成製得預處理劑。根據以下方法進行黏著性評估。此外,表2至5中,單位皆為克/升。The pretreatment agent was prepared in the compositions shown in Tables 2 to 5 below. Adhesion evaluation was performed according to the following method. In addition, in Tables 2 to 5, the units are in grams per liter.

基板銅和光阻劑之間的黏著性之評估Evaluation of adhesion between substrate copper and photoresist

具有光阻膜黏著至基板之用於評估的基板浸在預處理劑中,於35℃預處理3分鐘。在光學顯微鏡(放大200倍)下觀察藉此處理的評估基板,以評估光阻劑的剝離存在/不存在。當光阻劑之剝離不存在時,評估為黏著性良好;光阻劑之剝離存在時,評估為黏著性不良。其結果亦示於表2至5。表2至5中,符號○代表黏著性良好,而符號×代表黏著性不良。The substrate for evaluation with a photoresist film adhered to the substrate was immersed in a pretreatment agent and pretreated at 35 ° C for 3 minutes. The evaluation substrate thus treated was observed under an optical microscope (magnification 200 times) to evaluate the presence/absence of peeling of the photoresist. When the peeling of the photoresist was not present, it was evaluated as good adhesion; when the peeling of the photoresist was present, it was evaluated as poor adhesion. The results are also shown in Tables 2 to 5. In Tables 2 to 5, the symbol ○ represents good adhesion, and the symbol x represents poor adhesion.

基板銅和鍍膜之間的黏著性之評估Evaluation of adhesion between substrate copper and coating

根據下面表1所示步驟,已進行電鍍處理的基板浸在50℃的40克/升NaOH溶液中5分鐘,並剝除光阻劑。評估基板在光學顯微鏡(放大200倍)下放大時,如圖1所示者,切割刀4的切割邊緣朝向介於以L/S=25微米/25微米沉積的銅線之間的基板側施壓直到其與基板銅2接觸,且鍍膜3於水平方向翻起。此外,圖1中的符號1代表基板。當基板銅與鍍膜一起剝離,使得位於下方的樹脂外露時,評估為黏著性良好;當僅鍍膜剝離,使得基板銅外露,則評估為黏著性不良。評估結果亦示於表2至5。表2至5中,符號○代表黏著性良好,而符號×代表黏著性不良。According to the procedure shown in Table 1 below, the substrate which had been subjected to the plating treatment was immersed in a 40 g/liter NaOH solution at 50 ° C for 5 minutes, and the photoresist was stripped. When the evaluation substrate is enlarged under an optical microscope (magnification 200 times), as shown in FIG. 1, the cutting edge of the cutting blade 4 is directed toward the substrate side between the copper wires deposited at L/S = 25 μm / 25 μm. The pressure is pressed until it comes into contact with the substrate copper 2, and the plating film 3 is turned up in the horizontal direction. Further, reference numeral 1 in Fig. 1 denotes a substrate. When the substrate copper was peeled off together with the plating film so that the resin located below was exposed, it was evaluated that the adhesion was good; when only the plating film was peeled off, the substrate copper was exposed, and the adhesion was evaluated as poor. The results of the assessment are also shown in Tables 2 to 5. In Tables 2 to 5, the symbol ○ represents good adhesion, and the symbol x represents poor adhesion.

由實例1至12的結果,看出由抗吸附劑和氯離子所構成的預處理劑之黏著性良好。From the results of Examples 1 to 12, it was found that the pretreatment agent composed of the anti-adsorbent and the chloride ion had good adhesion.

由實例13至24的結果,看出除了抗吸附劑和氯離子以外,非離子界面活性劑、酸、溶劑、和氧化劑含於預處理劑中的情況中,亦得到良好黏著性。From the results of Examples 13 to 24, it was found that in addition to the anti-adsorbent and the chloride ion, the nonionic surfactant, the acid, the solvent, and the oxidizing agent were also contained in the pretreatment agent, and good adhesion was also obtained.

比較例16中,使用相關技術中常使用的酸性預處理劑,基板銅和鍍膜之間的黏著性不良。由比較例1至5和8至14的結果,看出當使用具有單一組成的溶液時,基板銅和鍍膜之間的黏著性不良。由比較例6和7的結果,看出添加溴離子或氟離子代替氯離子導致基板銅和鍍膜之間的黏著性不良。由比較例15(其中使用相關技術常用的微蝕刻溶液組成物)的結果,看出微蝕刻導致基板銅和鍍膜之間的黏著性不良。由比較例17的結果,看出氯離子不存在導致基板銅和鍍膜之間的黏著性不良。由比較例18的結果,看出抗吸附劑不存在導致基板銅和鍍膜之間的黏著性不良。In Comparative Example 16, the acidic pretreatment agent commonly used in the related art was used, and the adhesion between the substrate copper and the plating film was poor. From the results of Comparative Examples 1 to 5 and 8 to 14, it was found that when a solution having a single composition was used, the adhesion between the substrate copper and the plating film was poor. From the results of Comparative Examples 6 and 7, it was found that the addition of a bromide ion or a fluorine ion in place of the chloride ion resulted in poor adhesion between the substrate copper and the plating film. From the results of Comparative Example 15, in which the microetching solution composition commonly used in the related art was used, it was found that the microetching caused poor adhesion between the substrate copper and the plating film. From the results of Comparative Example 17, it was found that the absence of chloride ions resulted in poor adhesion between the substrate copper and the plating film. From the results of Comparative Example 18, it was found that the absence of the anti-adsorbent resulted in poor adhesion between the substrate copper and the plating film.

實例25-28Example 25-28

使用實例1的預處理劑,以與前述方法相同的方式進行黏著性評估,但預處理係於處理溫度為25、30、45、或50℃進行。其結果示於表6。基板銅和電阻劑之間的黏著性及基板銅和鍍膜之間的黏著性皆良好。Using the pretreatment agent of Example 1, the adhesion evaluation was carried out in the same manner as the above method, but the pretreatment was carried out at a treatment temperature of 25, 30, 45, or 50 °C. The results are shown in Table 6. The adhesion between the substrate copper and the resistive agent and the adhesion between the substrate copper and the plating film are good.

實例29-33Example 29-33

使用實例1的預處理劑,以與前述方法相同的方式進行黏著性評估,但預處理時間為1、5、10、20、或30分鐘。其結果示於表7。基板銅和電阻劑之間的黏著性及基板銅和鍍膜之間的黏著性皆良好。Using the pretreatment agent of Example 1, the adhesion evaluation was performed in the same manner as the foregoing method, but the pretreatment time was 1, 5, 10, 20, or 30 minutes. The results are shown in Table 7. The adhesion between the substrate copper and the resistive agent and the adhesion between the substrate copper and the plating film are good.

參考例1Reference example 1

評估基板在未進行表1所示的預處理步驟之前,於120℃處理2小時,以令基板表面氧化。之後,使用實例1的預處理劑和根據前述方法,進行基板銅和鍍膜之間之黏著。其結果示於表8。The evaluation substrate was treated at 120 ° C for 2 hours before the pretreatment step shown in Table 1 was carried out to oxidize the surface of the substrate. Thereafter, the adhesion between the substrate copper and the plating film was carried out using the pretreatment agent of Example 1 and according to the aforementioned method. The results are shown in Table 8.

實例34Example 34

以與前述方法中相同的方式進行基板銅和鍍膜之間的黏著性評估,但評估基板進行表1所示預處理步驟之前,於120℃熱處理2小時,以令基板表面氧化,然後在評估基板以表1所示的預處理步驟,浸在實例1的預處理劑中的同時,進行超音波處理。其結果示於表8。The adhesion between the substrate copper and the plating film was evaluated in the same manner as in the foregoing method, except that the substrate was subjected to heat treatment at 120 ° C for 2 hours before the substrate was subjected to the pretreatment step shown in Table 1 to oxidize the surface of the substrate, and then the substrate was evaluated. Ultrasonic treatment was carried out while immersing in the pretreatment agent of Example 1 in the pretreatment step shown in Table 1. The results are shown in Table 8.

實例35Example 35

以與前述方法中相同的方式進行基板銅和鍍膜之間的黏著性評估,但評估基板進行表1所示預處理步驟之前,於120℃熱處理2小時,以令基板表面氧化,然後在評估基板以表1所示的預處理步驟,浸在實例1的預處理劑中的同時,進行電解處理(0.5伏特)。其結果示於表8。The adhesion between the substrate copper and the plating film was evaluated in the same manner as in the foregoing method, except that the substrate was subjected to heat treatment at 120 ° C for 2 hours before the substrate was subjected to the pretreatment step shown in Table 1 to oxidize the surface of the substrate, and then the substrate was evaluated. The electrolytic treatment (0.5 volt) was carried out while immersing in the pretreatment agent of Example 1 in the pretreatment step shown in Table 1. The results are shown in Table 8.

由參考例1的結果,看出在基板表面上的氧化物膜導致黏著性部分不良。由實例34和35,看出當氧化物膜存在於基板表面時,超音波處理或電解處理與預處理併用,解決黏著性不良的問題。From the results of Reference Example 1, it was found that the oxide film on the surface of the substrate caused a partial adhesion defect. From Examples 34 and 35, it is seen that when an oxide film is present on the surface of the substrate, ultrasonic treatment or electrolytic treatment is combined with pretreatment to solve the problem of poor adhesion.

1...基板1. . . Substrate

2...基板銅2. . . Substrate copper

3...鍍膜3. . . Coating

4...切割刀4. . . Cutting knife

圖1以圖解說明用以評估實例中之基板銅和鍍膜之間的黏著性之方法。Figure 1 illustrates a method for evaluating the adhesion between a substrate copper and a coating in an example.

1...基板1. . . Substrate

2...基板銅2. . . Substrate copper

3...鍍膜3. . . Coating

4...切割刀4. . . Cutting knife

Claims (11)

一種電鍍用預處理劑,包含含有下列者之水溶液:(A)至少一種抗吸附劑,選自三唑化合物、吡唑化合物和咪唑化合物;和(B)氯離子;和(C)非離子界面活性劑;其中以該水溶液為基準計,組份(A)之濃度為0.01至200克/升,組份(B)之濃度為001至200克/升,及組份(C)之濃度為0.1至200克/升。 A pretreatment agent for electroplating, comprising an aqueous solution comprising: (A) at least one anti-adsorbent selected from the group consisting of a triazole compound, a pyrazole compound, and an imidazole compound; and (B) a chloride ion; and (C) a nonionic interface An active agent; wherein the concentration of the component (A) is 0.01 to 200 g/liter, the concentration of the component (B) is 001 to 200 g/liter, and the concentration of the component (C) is 0.1 to 200 g / liter. 如申請專利範圍第1項之電鍍用預處理劑,其中該水溶液另含有(D)選自水溶性醚、胺、醇、二醇醚、酮、酯、和脂肪酸中之至少一種溶劑。 The pretreatment agent for electroplating according to claim 1, wherein the aqueous solution further contains (D) at least one solvent selected from the group consisting of water-soluble ethers, amines, alcohols, glycol ethers, ketones, esters, and fatty acids. 如申請專利範圍第2項之電鍍用預處理劑,其中該組份(D)包含選自水溶性醚、醇、酮、酯、和脂肪酸中之至少一種溶劑。 The pretreatment agent for electroplating according to item 2 of the patent application, wherein the component (D) comprises at least one solvent selected from the group consisting of water-soluble ethers, alcohols, ketones, esters, and fatty acids. 如申請專利範圍第1項之電鍍用預處理劑,其中該水溶液另含有(E)酸。 The pretreatment agent for electroplating according to claim 1, wherein the aqueous solution further contains (E) an acid. 如申請專利範圍第1項之電鍍用預處理劑,其中該水溶液另含有(F)氧化劑。 The pretreatment agent for electroplating according to claim 1, wherein the aqueous solution further contains (F) an oxidizing agent. 一種電鍍用預處理方法,包含將工件浸在如申請 專利範圍第1項之電鍍用預處理劑中。 A pretreatment method for electroplating, comprising immersing a workpiece in an application In the pretreatment agent for electroplating according to item 1 of the patent scope. 一種電鍍用預處理方法,包含將工件浸在如申請專利範圍第1項之電鍍用預處理劑中,同時進行超音波處理。 A pretreatment method for electroplating, which comprises immersing a workpiece in a pretreatment agent for electroplating according to item 1 of the patent application, and performing ultrasonic treatment at the same time. 一種電鍍用預處理方法,包含將工件浸在如申請專利範圍第1項之電鍍用預處理劑中,同時進行電解處理。 A pretreatment method for electroplating, comprising immersing a workpiece in a pretreatment agent for electroplating according to item 1 of the patent application, and performing electrolytic treatment at the same time. 一種電鍍方法,其中使用如申請專利範圍第6項之電鍍用預處理方法。 An electroplating method in which a pretreatment method for electroplating as in claim 6 of the patent application is used. 一種電鍍方法,其中使用如申請專利範圍第7項之電鍍用預處理方法。 An electroplating method in which a pretreatment method for electroplating as in claim 7 of the patent application is used. 一種電鍍方法,其中使用如申請專利範圍第8項之電鍍用預處理方法。 An electroplating method in which a pretreatment method for electroplating as in the eighth aspect of the patent application is used.
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