TWI498155B - Circuit type semiconductor chemical tank mechanism - Google Patents
Circuit type semiconductor chemical tank mechanism Download PDFInfo
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- TWI498155B TWI498155B TW102130348A TW102130348A TWI498155B TW I498155 B TWI498155 B TW I498155B TW 102130348 A TW102130348 A TW 102130348A TW 102130348 A TW102130348 A TW 102130348A TW I498155 B TWI498155 B TW I498155B
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Description
本發明是有關於一種半導體設備,特別是指一種供半導體元件浸泡化學溶液的迴路型半導體化學槽機構。The present invention relates to a semiconductor device, and more particularly to a circuit type semiconductor chemical bath mechanism for immersing a chemical solution in a semiconductor device.
參閱圖1,在現今的半導體元件,特別是積體電路晶圓100的產製過程中,進行例如顯影、光阻去除、金屬蝕刻..等製程時,大抵是由操作人員或機傳手臂將整籃的晶圓100浸入一容盛有預定化學溶液並保持預定溫度的化學溶液盛裝槽1中進行反應,經過預定時間待反應結束後,再由操作人員或機傳手臂將整籃晶圓100取出,改換至另一化學溶液盛裝槽1進行例如以去離子水清洗、吹乾等等動作,而完成該等製程。Referring to FIG. 1, in the production process of today's semiconductor components, particularly the integrated circuit wafer 100, processes such as development, photoresist removal, metal etching, etc. are generally performed by an operator or an aircraft arm. The whole basket of wafer 100 is immersed in a chemical solution holding tank 1 containing a predetermined chemical solution and maintained at a predetermined temperature, and after a predetermined time is over, the operator or the machine passes the entire basket of wafers 100. It is taken out and changed to another chemical solution holding tank 1 to perform, for example, washing with deionized water, drying, and the like, to complete the processes.
為了單位時間產能極大化,操作人員會將晶圓100密集地排列在晶片匣或晶片籃中,然後泡進化學溶液盛裝槽1內進行反應,但這樣的動作會出現下述問題:1.整籃晶圓100驟然浸入恆溫的化學溶液中,會使得化學溶液的溫度驟降,而增加反應過程的不確定因素;2.晶圓100的密集排列會導致每一片晶圓100於化學溶 液中進行化學反應的條件不一致;3.晶圓100上帶有的化學品或光阻等會溶解或解離,而存在於化學溶液中造成交叉汙染,且因為整籃晶圓100數目的累加,更加劇交叉汙染的嚴重性;4.浸泡結束後,整籃密集排列的晶圓100不易完全清洗去除殘留的化學溶液,也不易吹風乾燥;5.基於產能極大化,化學溶液盛裝槽1的體積都極為龐大,以容裝足量的化學溶液,而某一製程又往往需要不只一只化學溶液盛裝槽1,如此導致機台龐大、設備成本增加;6.操作人員直接面對化學溶液提取、放置晶圓100,增加工安發生的可能性,更會因為化學溶液的揮發而嚴重影響操作人員的健康。In order to maximize the throughput per unit time, the operator will densely arrange the wafers 100 in the wafer cassette or the wafer basket, and then bubble into the chemical solution holding tank 1 for reaction, but such an action may cause the following problems: 1. The sudden immersion of the basket wafer 100 in a constant temperature chemical solution causes a sudden drop in the temperature of the chemical solution, which increases the uncertainty of the reaction process. 2. The dense arrangement of the wafer 100 causes each wafer 100 to be chemically dissolved. The conditions for the chemical reaction in the liquid are inconsistent; 3. The chemicals or photoresists on the wafer 100 may dissolve or dissociate, and the chemical solution may cause cross-contamination, and because the number of the entire basket of wafers 100 is increased, The severity of cross-contamination is further aggravated; 4. After the immersion is finished, the wafer 100 densely arranged in the whole basket is not easy to be completely cleaned to remove residual chemical solution, and is not easy to blow dry; 5. Based on the maximum capacity, the volume of the chemical solution containing tank 1 They are extremely large to accommodate a sufficient amount of chemical solution, and a process often requires more than one chemical solution to hold the tank 1, which results in a large machine and increased equipment costs; 6. The operator directly faces the chemical solution extraction, Placing the wafer 100 increases the possibility of occurrence of work safety, and the health of the operator is seriously affected by the volatilization of the chemical solution.
因此,現有的積體電路晶圓100的產製過程,特別是晶圓100需浸泡化學溶液進行例如顯影、光阻去除、金屬蝕刻..等製程的設備需要改進,以解決上述問題。Therefore, the production process of the existing integrated circuit wafer 100, particularly the process in which the wafer 100 needs to be immersed in a chemical solution, such as development, photoresist removal, metal etching, etc., needs to be improved to solve the above problems.
因此,本發明之目的,即在提供一種提供晶圓進行最佳化學液恆溫反應,並避免操作人員接觸揮發的化學溶液機會的迴路型半導體化學槽機構。Accordingly, it is an object of the present invention to provide a loop-type semiconductor chemical bath mechanism that provides a wafer for optimal chemical liquid thermostatic reaction and that avoids operator exposure to volatile chemical solutions.
於是,本發明一種迴路型半導體化學槽機構包含一化學槽,及一運轉承載裝置。Thus, a loop type semiconductor chemical bath mechanism of the present invention comprises a chemical tank and a running carrier.
該化學槽包括一底壁、一自該底壁向上延伸的 內壁,及一自該底壁向上並與該內壁相間隔地延伸的外壁,該底壁、內壁、外壁共同界定一開放且成環形的儲放空間。The chemical tank includes a bottom wall and an upward extending from the bottom wall An inner wall, and an outer wall extending upward from the bottom wall and spaced apart from the inner wall, the bottom wall, the inner wall and the outer wall collectively defining an open and annular storage space.
該運轉承載裝置包括至少一供承置一半導體元件用的承載組件,及一令該承載組件於該儲放空間中環繞該內壁地移動的運轉組件。The operation carrying device includes at least one load bearing assembly for receiving a semiconductor component, and a running assembly for moving the load bearing assembly around the inner wall in the storage space.
本發明之功效在於:以運轉組件帶動承載組件於該儲放空間中環繞該內壁地移動,而讓盛放在承載組件的半導體元件於環形的儲放空間中運行逐一進行反應,及/或清洗、吹乾等過程,而可以在最佳化學液恆溫反應下,進行製程條件穩定的最佳化處理。The effect of the present invention is that the running assembly drives the load bearing assembly to move around the inner wall in the storage space, and the semiconductor components contained in the load bearing assembly are operated one by one in the annular storage space, and/or The process of cleaning, drying, etc., and the optimization of the process conditions can be optimized under the optimal chemical liquid constant temperature reaction.
100‧‧‧晶圓100‧‧‧ wafer
27‧‧‧流道27‧‧‧ flow path
1‧‧‧化學溶液盛裝槽1‧‧‧chemical solution storage tank
28‧‧‧開口28‧‧‧ openings
2‧‧‧化學槽2‧‧‧chemical tank
3‧‧‧運轉承載裝置3‧‧‧Running carrier
21‧‧‧底壁21‧‧‧ bottom wall
31‧‧‧承載組件31‧‧‧Loading components
22‧‧‧內壁22‧‧‧ inner wall
311‧‧‧懸臂311‧‧‧ cantilever
23‧‧‧外壁23‧‧‧ outer wall
312‧‧‧吊籃312‧‧‧ hanging basket
24‧‧‧隔板24‧‧ ‧ partition
32‧‧‧運轉組件32‧‧‧Operating components
25‧‧‧頂蓋25‧‧‧Top cover
321‧‧‧轉盤321‧‧‧ Turntable
26‧‧‧儲放空間26‧‧‧Storage space
322‧‧‧第一動力件322‧‧‧First power piece
261‧‧‧第一容放室261‧‧‧First Capacity Room
323‧‧‧第二動力件323‧‧‧second power piece
262‧‧‧第二容放室262‧‧‧Second capacity room
4‧‧‧溫控裝置4‧‧‧temperature control device
263‧‧‧第三容放室263‧‧‧ Third Capacity Room
5‧‧‧清洗裝置5‧‧‧cleaning device
264‧‧‧第四容放室264‧‧‧fourth discharge room
6‧‧‧風刀裝置6‧‧‧Air knife device
265‧‧‧第五容放室265‧‧‧The fifth capacity room
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一剖視示意圖,說明現有的、將整籃的晶圓浸入一容盛有預定化學溶液並保持預定溫度的化學溶液盛裝槽中進行反應的製程;圖2是一立體圖,說明本發明一種迴路型半導體化學槽機構的一較佳實施例;圖3是一剖視示意圖,說明本發明一種迴路型半導體化學槽機構的較佳實施例中,自一化學槽外壁的一開口將一晶圓置於一由一運轉組件帶動的承載組件;圖4是一剖視示意圖,說明本發明一種迴路型半導體化 學槽機構的較佳實施例中,一盛放有一晶圓的運轉承載裝置於一儲放空間通過一隔板;圖5是一剖視示意圖,說明本發明一種迴路型半導體化學槽機構的較佳實施例中,一盛放有一晶圓的運轉承載裝置帶動該晶圓於一第二容放室的化學溶液中行進;圖6是一剖視示意圖,說明本發明一種迴路型半導體化學槽機構的較佳實施例中,一盛放有一晶圓的運轉承載裝置帶動該晶圓於一第三容放室中以一清洗裝置注水清洗;及圖7是一剖視示意圖,說明本發明一種迴路型半導體化學槽機構的較佳實施例中,一盛放有一晶圓的運轉承載裝置帶動該晶圓於一第四容放室中以一風刀裝置吹風乾燥。Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is a schematic cross-sectional view showing the prior art, immersing the entire basket of wafers with a predetermined chemical solution. And a process for performing a reaction in a chemical solution holding tank at a predetermined temperature; FIG. 2 is a perspective view showing a preferred embodiment of a loop type semiconductor chemical tank mechanism of the present invention; and FIG. 3 is a cross-sectional view showing a kind of the present invention. In a preferred embodiment of the loop type semiconductor chemical bath mechanism, a wafer is placed in a bearing assembly driven by a running assembly from an opening in the outer wall of a chemical bath; FIG. 4 is a cross-sectional view showing a circuit of the present invention. Semiconductorization In a preferred embodiment of the slot mechanism, a running carrier device for holding a wafer passes through a partition in a storage space; FIG. 5 is a cross-sectional view showing a comparison of a loop type semiconductor chemical tank mechanism of the present invention. In a preferred embodiment, a running carrier carrying a wafer drives the wafer to travel in a chemical solution in a second receiving chamber; FIG. 6 is a cross-sectional view showing a loop type semiconductor chemical bath mechanism of the present invention. In a preferred embodiment, a running carrier device for holding a wafer drives the wafer to be cleaned by a cleaning device in a third receiving chamber; and FIG. 7 is a cross-sectional view showing a circuit of the present invention. In a preferred embodiment of the semiconductor chemical bath mechanism, a running carrier for holding a wafer drives the wafer to be dried by a wind knife device in a fourth chamber.
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖2,本發明一種迴路型半導體化學槽機構的一較佳實施例包含一化學槽2、一運轉承載裝置3、一溫控裝置4、一清洗裝置5,及一風刀裝置6,適用於半導體元件,特別是積體電路晶圓100的產製過程中,將晶圓100浸泡於特定化學溶液中以進行例如顯影、光阻去除、金屬蝕刻..等製程。Referring to FIG. 2, a preferred embodiment of a loop type semiconductor chemical tank mechanism of the present invention comprises a chemical tank 2, a running carrier device 3, a temperature control device 4, a cleaning device 5, and an air knife device 6, which are applicable. In the manufacturing process of the semiconductor device, particularly the integrated circuit wafer 100, the wafer 100 is immersed in a specific chemical solution to perform processes such as development, photoresist removal, metal etching, and the like.
該化學槽2包括一底壁21、一自該底壁21向上延伸的內壁22、一自該底壁21向上並與該內壁22相間隔 地延伸的外壁23、多數隔板24,及一頂蓋25,其中,該底壁21、內壁22、外壁23共同界定一俯瞰大致類似運動場狀且上方開放的環形的儲放空間26;該等隔板24間隔地設置於該儲放空間26中並將該儲放空間26分隔成多數獨立的容放室,在本例中是以五塊隔板24將該儲放空間26分隔成五個大小不等的容放室,並自右上方開始以逆時鐘方向分別命名為第一容放室261、第二容放室262、第三容放室263、第四容放室264,及第五容放室265作說明;該頂蓋25封閉該儲放空間26,在本例中以該頂蓋26概成馬蹄形而同時封閉該第二容放室262、第三容放室263、第四容放室264作說明,較佳地,該頂蓋26也可是多段設計,而分別對應封閉不同的容放室。The chemical tank 2 includes a bottom wall 21, an inner wall 22 extending upward from the bottom wall 21, and an upward wall from the bottom wall 21 and spaced apart from the inner wall 22. An outer wall 23, a plurality of partitions 24, and a top cover 25, wherein the bottom wall 21, the inner wall 22, and the outer wall 23 collectively define an annular storage space 26 that is substantially similar to a sports field and open above; The partitions 24 are spaced apart from each other in the storage space 26 and divide the storage space 26 into a plurality of independent receiving chambers. In this example, the storage spaces 26 are divided into five by five partitions 24. The accommodating chambers of different sizes are named as the first accommodating chamber 261, the second accommodating chamber 262, the third accommodating chamber 263, and the fourth accommodating chamber 264 in the counterclockwise direction from the upper right. The fifth receiving chamber 265 is illustrated; the top cover 25 closes the storage space 26, and in this example, the top cover 26 is formed into a horseshoe shape while the second receiving chamber 262 and the third receiving chamber 263 are closed. The fourth receiving chamber 264 is illustrated. Preferably, the top cover 26 may also have a multi-segment design, and respectively correspondingly close different receiving chambers.
進一步地,該化學槽2還包括多數流道27和開口28,該等流道27分別與第一容放室261、第二容放室262、第三容放室263、第四容放室264,及第五容放室265連通並可封閉地開啟,而用於注入或排放例如化學溶液或清水於該等容放室中;該等開口28形成在外壁23並與該儲放空間26連通,而供操作人員進行取出、置放晶圓100之用,在本例中,僅以外壁23上對應第一容放室261、第五容放室265形成二開口28作說明。Further, the chemical tank 2 further includes a plurality of flow passages 27 and openings 28, which are respectively associated with the first receiving chamber 261, the second receiving chamber 262, the third receiving chamber 263, and the fourth receiving chamber 264, and the fifth receiving chamber 265 is in communication and can be closed to open, for injecting or discharging, for example, a chemical solution or fresh water in the receiving chambers; the openings 28 are formed in the outer wall 23 and the storage space 26 For the operator to take out and place the wafer 100, in this example, only the first opening 261 and the fifth receiving chamber 265 of the outer wall 23 are formed as two openings 28.
參閱圖2、圖3、圖4,該運轉承載裝置3包括至少一供承放一晶圓100用的承載組件31,及一令該承載組件31於該儲放空間26環繞該內壁22移動的運轉組件 32,在本例中,繪示多數承載組件31作說明。更詳細而言,該承載組件31包括一概成Z字型的懸臂311,及一承放晶圓100的吊籃312,該懸臂311的一端部與該運轉組件32連接,另一相反端部與該弔籃312連接;該運轉組件32包括一環繞該內壁22設置並連接該懸臂311的轉盤321、一驅動該轉盤321轉動的第一動力件322,及一帶動該懸臂311上下位移而使懸臂311帶動弔籃312遠離或貼近該底壁21的第二帶動件323,其中,第一動力件322、第二動力件323為馬達、步進式馬達,或氣壓缸等等動力裝置。2, 3, and 4, the running carrier device 3 includes at least one carrier assembly 31 for receiving a wafer 100, and a carrier assembly 31 is moved around the inner wall 22 in the storage space 26. Running component 32. In this example, a majority of the load bearing assembly 31 is illustrated. In more detail, the carrier assembly 31 includes a cantilever 311 of a general zigzag shape, and a hanging basket 312 for holding the wafer 100. One end of the cantilever 311 is connected to the running assembly 32, and the opposite end is opposite. The hoisting basket 312 is connected; the running assembly 32 includes a dial 321 disposed around the inner wall 22 and connected to the cantilever 311, a first power member 322 for driving the turntable 321 to rotate, and a displacement of the cantilever 311 up and down. The cantilever 311 drives the basket 312 away from or adjacent to the second driving member 323 of the bottom wall 21, wherein the first power member 322 and the second power member 323 are power units such as a motor, a stepping motor, or a pneumatic cylinder.
參閱圖2、圖5,該溫控裝置4對應設置於該第二容放室262,而可加熱預定放置於該第二容放室262中的化學溶液。Referring to FIG. 2 and FIG. 5, the temperature control device 4 is correspondingly disposed in the second receiving chamber 262, and the chemical solution predetermined to be placed in the second receiving chamber 262 can be heated.
參閱圖2、圖6,該清洗裝置5對應設置於該第三容放室263,而可噴射例如清水或去離子水至第三容放室263中。Referring to FIG. 2 and FIG. 6, the cleaning device 5 is correspondingly disposed in the third receiving chamber 263, and can spray, for example, fresh water or deionized water into the third receiving chamber 263.
參閱圖2、圖7,該風刀裝置6對應設置於該第四容放室264,而可噴射例如氮氣、乾燥暖空氣至該第四容放室264。Referring to FIG. 2 and FIG. 7 , the air knife device 6 is correspondingly disposed in the fourth receiving chamber 264 , and can spray, for example, nitrogen gas and dry warm air to the fourth receiving chamber 264 .
上述本發明迴路型半導體化學槽機構之較佳實施例於實際使用時,是令第一動力件322帶動該轉盤321轉動而連動該等承載組件31不斷地環繞該內壁22移動,進而依序於該第一容放室261至第五容放室265循環的運行;且當該轉盤321轉動而連動承載組件31自例如第一容 放室261進入第二容放室262而須通過隔板24時,該第二動力件323令該承載組件31向上移動而通過隔板24,通過後再作動令該承載組件31向下移動至原始高度,繼續被轉盤321帶動移動。The preferred embodiment of the above-described loop-type semiconductor chemical tank mechanism of the present invention is such that the first power member 322 drives the turntable 321 to rotate and the load bearing members 31 continuously move around the inner wall 22, thereby sequentially Circulating operation in the first receiving chamber 261 to the fifth receiving chamber 265; and when the turntable 321 is rotated to interlock the load bearing assembly 31 from, for example, the first capacity When the discharge chamber 261 enters the second receiving chamber 262 and passes through the partition 24, the second power member 323 moves the load bearing assembly 31 upwardly through the partition plate 24, and then moves to move the load bearing assembly 31 downward to The original height continues to be moved by the dial 321 .
在該第一動力件322帶動該轉盤321轉動而連動該等承載組件31移動的同時,操作人員將預定的化學溶液儲置於該第二容放室262中,並以該溫控裝置4對應加熱使化學溶液保持預定溫度,並同步啟動該清洗裝置5和風刀裝置6;之後,操作人員持續地逐一將晶圓100自對應於第一容放室261的開口28一一對應放置於該等承載組件31的弔籃312中,而讓晶圓100由運轉組件32的轉盤321帶動依序通過第二容放室262、第三容放室263、第四容放室264,而至第五容放室265;當盛放有晶圓100的承載組件31於第二容放室262中移動時,晶圓100即浸置於化學溶液中進行化學反應;當盛放有晶圓100的承載組件31進入第三容放室263中移動時,盛放在吊籃312的晶圓100即被清洗裝置5向第三容放室263噴灑的清水或去離子水沖洗,進而除去殘留的化學溶液;當盛放有晶圓100的承載組件31進入第四容放室264中移動時,盛放在吊籃312的晶圓100即被風刀裝置6向第四容放室264噴射的氮氣,或暖空氣等氣流吹乾乾燥;最後當盛放有晶圓100的承載組件31進入第五容放室265中移動時,操作人員即可將完成化學反應且已清洗乾燥完畢的晶圓100取出;空置的承 載組件31再進入第一容放室261時,操作人員即再置入一晶片,令其進行上述過程。While the first power member 322 drives the turntable 321 to rotate to move the load bearing assemblies 31, the operator stores the predetermined chemical solution in the second receiving chamber 262, and corresponds to the temperature control device 4 Heating maintains the chemical solution at a predetermined temperature, and simultaneously starts the cleaning device 5 and the air knife device 6; thereafter, the operator continuously places the wafers 100 one by one from the openings 28 corresponding to the first receiving chambers 261 one by one. In the basket 312 of the load bearing assembly 31, the wafer 100 is sequentially driven by the turntable 321 of the running assembly 32 through the second receiving chamber 262, the third receiving chamber 263, and the fourth receiving chamber 264, and to the fifth The chamber 100 is immersed in a chemical solution for chemical reaction when the carrier assembly 31 containing the wafer 100 is moved in the second receiving chamber 262; when the wafer 100 is loaded When the assembly 31 moves into the third receiving chamber 263, the wafer 100 placed on the hanging basket 312 is rinsed with the clean water or deionized water sprayed by the cleaning device 5 to the third receiving chamber 263, thereby removing the residual chemical solution. When the carrier component 31 holding the wafer 100 enters the fourth receiving chamber 2 When moving in 64, the wafer 100 placed on the gondola 312 is blown dry by the air blown by the air knife device 6 to the fourth receiving chamber 264, or a stream of air such as warm air; finally, when the wafer 100 is held. When the load bearing assembly 31 moves into the fifth receiving chamber 265, the operator can take out the wafer 100 that has completed the chemical reaction and has been cleaned and dried; the vacant bearing When the carrier assembly 31 re-enters the first receiving chamber 261, the operator reinserts a wafer to perform the above process.
由上述的說明可知,本發明迴路型半導體化學槽機構之較佳實施例於實際使用時,具有以下的優點:1.由承載組件31逐一單片式地將晶圓100帶入化學溶液中,可以得到最佳化學液恆溫的穩定性,得到製程穩定的最佳化處理條件,同時在後續的清洗、乾燥上也能得到最佳的效果;2.晶圓100是在化學溶液被帶動前進,可以有效擾動光阻和化學藥液反應後仍殘留在晶圓表面,阻止光阻和化學藥液的繼續反應;3.儲放在容放室中的化學溶液僅需淹沒行進中的晶圓100,整體用量可以較現有的化學溶液盛裝槽1的盛裝量大幅縮減,並可於製程進行中進行更換;4.化學槽2以頂蓋25密封,僅留下取、置晶片用的開口28,不但可以讓化學藥液保有恆定溫度,也減少操作人員直接、間接接觸到化學藥液的風險,有效減少工安意外發生的可能;5.整體設備體積可較現有的、包括多數個化學溶液盛裝槽1的設備有效縮減。It can be seen from the above description that the preferred embodiment of the loop type semiconductor chemical bath mechanism of the present invention has the following advantages in practical use: 1. The wafer 100 is carried into the chemical solution one by one by the carrier assembly 31, The stability of the optimal chemical solution can be obtained, and the optimum processing conditions for the process stability can be obtained, and the best effect can be obtained in the subsequent cleaning and drying; 2. The wafer 100 is driven in the chemical solution. It can effectively disturb the photoresist and the chemical liquid solution and still remain on the surface of the wafer, preventing the photoresist and the chemical liquid from continuing to react; 3. The chemical solution stored in the chamber only needs to drown the wafer 100 in progress. The overall dosage can be greatly reduced compared with the existing chemical solution storage tank 1 and can be replaced during the process; 4. The chemical tank 2 is sealed by the top cover 25, leaving only the opening 28 for taking and placing the wafer. Not only can the chemical liquid maintain a constant temperature, but also reduce the risk of direct and indirect exposure of the chemical liquid to the operator, effectively reducing the possibility of accidents in the work safety; 5. The overall equipment volume can be compared with the existing ones, including Apparatus containing a plurality of chemical solution tank 1 effectively reduced.
另外要補充說明的是,當隔板24數目較多而將本較佳實施例的第二容放室263再多區隔出數個獨立的容放室時,還可以在製程持續進行的狀況下進行部分容放室 儲放的化學溶液的更換,而有效維繫產能。In addition, it is to be noted that when the number of the partitions 24 is large and the second accommodation chamber 263 of the preferred embodiment is further divided into a plurality of independent receiving chambers, the process can be continued. Partial discharge room The chemical solution of the storage is replaced, and the production capacity is effectively maintained.
另外,本實施例是以第二動力件322驅動承載組件31上下移動作說明,事實上,也可以採用例如轉盤321具有高低起伏的設計而改變晶圓100移動中的高低位置,由於此等動力機構的實施手段眾多,在此不再一一舉例說明。In addition, in this embodiment, the second power member 322 drives the load bearing assembly 31 to move up and down. In fact, for example, the turntable 321 has a high and low undulation design to change the height position of the wafer 100 during movement, due to the power. There are many ways to implement the organization, and we will not give examples here.
綜上所述,本發明迴路型半導體化學槽機構是用形成有環形的儲放空間26的化學槽2,配合運轉承載裝置3帶動半導體元件,特別是晶圓100,於化學槽2中依序通過個別具有預定功用或是分別儲放預定化學溶液的容放室,而以循環運行的方式進行不同的動作,進而完成整體製程,確實改善現有的製程與設備的缺點,並提供半導體製程業界一種嶄新的選擇,故確實能達成本發明之目的。In summary, the circuit type semiconductor chemical tank mechanism of the present invention uses a chemical tank 2 formed with an annular storage space 26, and the operation carrier 3 drives the semiconductor component, particularly the wafer 100, in the chemical tank 2 in order. By performing a separate operation in a cycle operation mode by individually having a predetermined function or a storage chamber for storing a predetermined chemical solution, the overall process is completed, and the defects of the existing processes and equipment are indeed improved, and a semiconductor process industry is provided. With the new choice, it is indeed possible to achieve the object of the present invention.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.
100‧‧‧晶圓100‧‧‧ wafer
2‧‧‧化學槽2‧‧‧chemical tank
21‧‧‧底壁21‧‧‧ bottom wall
22‧‧‧內壁22‧‧‧ inner wall
23‧‧‧外壁23‧‧‧ outer wall
24‧‧‧隔板24‧‧ ‧ partition
25‧‧‧頂蓋25‧‧‧Top cover
26‧‧‧儲放空間26‧‧‧Storage space
261‧‧‧第一容放室261‧‧‧First Capacity Room
262‧‧‧第二容放室262‧‧‧Second capacity room
263‧‧‧第三容放室263‧‧‧ Third Capacity Room
264‧‧‧第四容放室264‧‧‧fourth discharge room
265‧‧‧第五容放室265‧‧‧The fifth capacity room
27‧‧‧流道27‧‧‧ flow path
28‧‧‧開口28‧‧‧ openings
3‧‧‧運轉承載裝置3‧‧‧Running carrier
31‧‧‧承載組件31‧‧‧Loading components
311‧‧‧懸臂311‧‧‧ cantilever
312‧‧‧吊籃312‧‧‧ hanging basket
32‧‧‧運轉組件32‧‧‧Operating components
321‧‧‧轉盤321‧‧‧ Turntable
322‧‧‧第一動力件322‧‧‧First power piece
323‧‧‧第二動力件323‧‧‧second power piece
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TWM347670U (en) * | 2008-05-01 | 2008-12-21 | Wakom Semiconductor Corp | Immersion device for single-sided etching |
TWM408788U (en) * | 2010-11-16 | 2011-08-01 | Hung Jou Technology Company Ltd | Wafer rotation detecting device |
TWM458655U (en) * | 2013-04-25 | 2013-08-01 | Eversol Corp | Foldable wafer clean cassette frame and wafer clean device |
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TWM347670U (en) * | 2008-05-01 | 2008-12-21 | Wakom Semiconductor Corp | Immersion device for single-sided etching |
TWM408788U (en) * | 2010-11-16 | 2011-08-01 | Hung Jou Technology Company Ltd | Wafer rotation detecting device |
TWM458655U (en) * | 2013-04-25 | 2013-08-01 | Eversol Corp | Foldable wafer clean cassette frame and wafer clean device |
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