TWI496878B - 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 - Google Patents

包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 Download PDF

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Publication number
TWI496878B
TWI496878B TW100108483A TW100108483A TWI496878B TW I496878 B TWI496878 B TW I496878B TW 100108483 A TW100108483 A TW 100108483A TW 100108483 A TW100108483 A TW 100108483A TW I496878 B TWI496878 B TW I496878B
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TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
polycrystalline germanium
polishing composition
removal rate
Prior art date
Application number
TW100108483A
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English (en)
Chinese (zh)
Other versions
TW201144418A (en
Inventor
郭毅
劉振東
阿瑞 瑞迪
張廣雲
Original Assignee
羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 羅門哈斯電子材料Ｃｍｐ控股公司
Publication of TW201144418A publication Critical patent/TW201144418A/zh
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Publication of TWI496878B publication Critical patent/TWI496878B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW100108483A 2010-03-16 2011-03-14 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法 TWI496878B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/724,990 US8496843B2 (en) 2010-03-16 2010-03-16 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Publications (2)

Publication Number Publication Date
TW201144418A TW201144418A (en) 2011-12-16
TWI496878B true TWI496878B (zh) 2015-08-21

Family

ID=44558417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100108483A TWI496878B (zh) 2010-03-16 2011-03-14 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法

Country Status (7)

Country Link
US (1) US8496843B2 (https=)
JP (1) JP5957778B2 (https=)
KR (1) KR101672816B1 (https=)
CN (1) CN102201338B (https=)
DE (1) DE102011013979A1 (https=)
FR (1) FR2957549B1 (https=)
TW (1) TWI496878B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
DE102010028461B4 (de) * 2010-04-30 2014-07-10 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels
US8440094B1 (en) * 2011-10-27 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate
JP7120846B2 (ja) * 2018-08-10 2022-08-17 株式会社フジミインコーポレーテッド 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法

Citations (2)

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US20060131275A1 (en) * 2004-12-22 2006-06-22 Jinru Bian Selective slurry for chemical mechanical polishing
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

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US2115192A (en) * 1936-06-20 1938-04-26 Rohm & Haas Aryloxy polyalkylene ether sulphonates
US3457107A (en) * 1965-07-20 1969-07-22 Diversey Corp Method and composition for chemically polishing metals
US4091014A (en) * 1976-12-01 1978-05-23 Texaco Development Corporation Process for making ether sulfonates
JPS5657802A (en) * 1979-10-03 1981-05-20 Gen Aniline & Film Corp Aqueous emulsion* surfactant and manufacture
US4283321A (en) 1979-10-03 1981-08-11 Gaf Corporation Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization
KR100378180B1 (ko) * 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
US6743683B2 (en) * 2001-12-04 2004-06-01 Intel Corporation Polysilicon opening polish
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
KR100591719B1 (ko) * 2004-11-09 2006-06-22 삼성전자주식회사 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP2008117807A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 研磨用組成物及び研磨方法
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
US8119529B2 (en) * 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate
US8491808B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060131275A1 (en) * 2004-12-22 2006-06-22 Jinru Bian Selective slurry for chemical mechanical polishing
TW201005077A (en) * 2008-07-11 2010-02-01 Fujifilm Corp Silicon nitride polishing liquid and polishing method

Also Published As

Publication number Publication date
DE102011013979A1 (de) 2014-02-13
FR2957549B1 (fr) 2015-08-21
CN102201338B (zh) 2013-10-02
CN102201338A (zh) 2011-09-28
KR101672816B1 (ko) 2016-11-04
US20110230050A1 (en) 2011-09-22
FR2957549A1 (fr) 2011-09-23
JP5957778B2 (ja) 2016-07-27
US8496843B2 (en) 2013-07-30
TW201144418A (en) 2011-12-16
JP2011205097A (ja) 2011-10-13
KR20110104444A (ko) 2011-09-22

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