FR2957549B1 - Procede de polissage d'un substrat comprenant du polysilicium et au moins un element choisi parmi l'oxyde de silicium et le nitrure de silicium - Google Patents
Procede de polissage d'un substrat comprenant du polysilicium et au moins un element choisi parmi l'oxyde de silicium et le nitrure de siliciumInfo
- Publication number
- FR2957549B1 FR2957549B1 FR1152171A FR1152171A FR2957549B1 FR 2957549 B1 FR2957549 B1 FR 2957549B1 FR 1152171 A FR1152171 A FR 1152171A FR 1152171 A FR1152171 A FR 1152171A FR 2957549 B1 FR2957549 B1 FR 2957549B1
- Authority
- FR
- France
- Prior art keywords
- polysilicium
- polishing
- substrate
- element selected
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/724,990 US8496843B2 (en) | 2010-03-16 | 2010-03-16 | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2957549A1 FR2957549A1 (fr) | 2011-09-23 |
FR2957549B1 true FR2957549B1 (fr) | 2015-08-21 |
Family
ID=44558417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1152171A Active FR2957549B1 (fr) | 2010-03-16 | 2011-03-16 | Procede de polissage d'un substrat comprenant du polysilicium et au moins un element choisi parmi l'oxyde de silicium et le nitrure de silicium |
Country Status (7)
Country | Link |
---|---|
US (1) | US8496843B2 (fr) |
JP (1) | JP5957778B2 (fr) |
KR (1) | KR101672816B1 (fr) |
CN (1) | CN102201338B (fr) |
DE (1) | DE102011013979A1 (fr) |
FR (1) | FR2957549B1 (fr) |
TW (1) | TWI496878B (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
DE102010028461B4 (de) * | 2010-04-30 | 2014-07-10 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Einebnung eines Materialsystems in einem Halbleiterbauelement unter Anwendung eines nicht-selektiven in-situ zubereiteten Schleifmittels |
US8440094B1 (en) * | 2011-10-27 | 2013-05-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate |
JP7120846B2 (ja) * | 2018-08-10 | 2022-08-17 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びその製造方法並びに研磨方法並びに基板の製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2115192A (en) * | 1936-06-20 | 1938-04-26 | Rohm & Haas | Aryloxy polyalkylene ether sulphonates |
US3457107A (en) * | 1965-07-20 | 1969-07-22 | Diversey Corp | Method and composition for chemically polishing metals |
US4091014A (en) * | 1976-12-01 | 1978-05-23 | Texaco Development Corporation | Process for making ether sulfonates |
US4283321A (en) | 1979-10-03 | 1981-08-11 | Gaf Corporation | Alkyl aryl ethyleneoxy sulfonate surfactants for vinyl acetate polymerization |
JPS5657802A (en) * | 1979-10-03 | 1981-05-20 | Gen Aniline & Film Corp | Aqueous emulsion* surfactant and manufacture |
KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
US6743683B2 (en) * | 2001-12-04 | 2004-06-01 | Intel Corporation | Polysilicon opening polish |
US7201647B2 (en) * | 2002-06-07 | 2007-04-10 | Praxair Technology, Inc. | Subpad having robust, sealed edges |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
KR100591719B1 (ko) * | 2004-11-09 | 2006-06-22 | 삼성전자주식회사 | 에피텍셜 콘택 플러그 제조방법, 그 제조 방법을 이용한반도체 장치 제조 방법 및 그 제조 방법을 이용한 더블스택형 트랜지스터 제조 방법 |
US7790618B2 (en) | 2004-12-22 | 2010-09-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective slurry for chemical mechanical polishing |
US20070077865A1 (en) | 2005-10-04 | 2007-04-05 | Cabot Microelectronics Corporation | Method for controlling polysilicon removal |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP5441362B2 (ja) * | 2008-05-30 | 2014-03-12 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
JP5467804B2 (ja) * | 2008-07-11 | 2014-04-09 | 富士フイルム株式会社 | 窒化ケイ素用研磨液及び研磨方法 |
US8119529B2 (en) * | 2009-04-29 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing a substrate |
US8492277B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride |
US8491808B2 (en) * | 2010-03-16 | 2013-07-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride |
-
2010
- 2010-03-16 US US12/724,990 patent/US8496843B2/en active Active
-
2011
- 2011-03-10 JP JP2011052898A patent/JP5957778B2/ja active Active
- 2011-03-14 TW TW100108483A patent/TWI496878B/zh active
- 2011-03-15 DE DE102011013979.6A patent/DE102011013979A1/de not_active Withdrawn
- 2011-03-15 KR KR1020110022827A patent/KR101672816B1/ko active IP Right Grant
- 2011-03-16 FR FR1152171A patent/FR2957549B1/fr active Active
- 2011-03-16 CN CN2011100722061A patent/CN102201338B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TW201144418A (en) | 2011-12-16 |
DE102011013979A1 (de) | 2014-02-13 |
TWI496878B (zh) | 2015-08-21 |
CN102201338A (zh) | 2011-09-28 |
US20110230050A1 (en) | 2011-09-22 |
CN102201338B (zh) | 2013-10-02 |
KR101672816B1 (ko) | 2016-11-04 |
JP2011205097A (ja) | 2011-10-13 |
FR2957549A1 (fr) | 2011-09-23 |
KR20110104444A (ko) | 2011-09-22 |
US8496843B2 (en) | 2013-07-30 |
JP5957778B2 (ja) | 2016-07-27 |
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