TWI492674B - Circuit board - Google Patents

Circuit board Download PDF

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Publication number
TWI492674B
TWI492674B TW099105651A TW99105651A TWI492674B TW I492674 B TWI492674 B TW I492674B TW 099105651 A TW099105651 A TW 099105651A TW 99105651 A TW99105651 A TW 99105651A TW I492674 B TWI492674 B TW I492674B
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Taiwan
Prior art keywords
layer
signal circuit
circuit
signal
shielding layer
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TW099105651A
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Chinese (zh)
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TW201038149A (en
Inventor
Akira Oikawa
Hiroyuki Kuribayashi
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Sumitomo Electric Industries
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Priority claimed from JP2009056697A external-priority patent/JP2010212439A/en
Priority claimed from JP2009211526A external-priority patent/JP2011061126A/en
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW201038149A publication Critical patent/TW201038149A/en
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Publication of TWI492674B publication Critical patent/TWI492674B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/025Impedance arrangements, e.g. impedance matching, reduction of parasitic impedance
    • H05K1/0253Impedance adaptations of transmission lines by special lay-out of power planes, e.g. providing openings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0219Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0237High frequency adaptations
    • H05K1/0245Lay-out of balanced signal pairs, e.g. differential lines or twisted lines
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07Electric details
    • H05K2201/0707Shielding
    • H05K2201/0715Shielding provided by an outer layer of PCB
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09218Conductive traces
    • H05K2201/09236Parallel layout
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09618Via fence, i.e. one-dimensional array of vias
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09681Mesh conductors, e.g. as a ground plane
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/0969Apertured conductors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structure Of Printed Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

電路基板Circuit substrate

本發明係有關於由接地層及透過絕緣體層對前述接地層配設訊號電路而成之電路基板。The present invention relates to a circuit board in which a signal circuit is disposed on the ground layer by a ground layer and a transmission insulator layer.

舉例來說,安裝以高頻帶動作之元件的電路基板,為抑制訊號反射及波形失真發生,必須將訊號傳送路徑(以下稱訊號電路。)的特性阻抗(以下稱Zo。)整合至前述元件的輸出入阻抗。For example, in order to suppress signal reflection and waveform distortion, a circuit substrate on which a component operating in a high frequency band is mounted must integrate a characteristic impedance (hereinafter referred to as Zo) of a signal transmission path (hereinafter referred to as a signal circuit) into the aforementioned components. Input and output impedance.

為將前述訊號傳送路徑的特性阻抗整合,係採用微帶結構,其係在適當圖案寬的訊號傳送路徑(帶狀線)夾著適當厚度的絕緣體層而與接地層對峙。In order to integrate the characteristic impedance of the aforementioned signal transmission path, a microstrip structure is adopted which is opposed to the ground layer by sandwiching an appropriate thickness of the insulator layer on a signal transmission path (strip line) of a suitable pattern width.

在前述電路基板結構的前述接地層,係作為規範訊號傳送路徑之特性阻抗的電性基準面。接著,一般而言,特性阻抗在單端傳送的情況下,多選擇在50Ω上下;在差動傳送的情況下,多選擇在100Ω上下。The ground layer of the circuit board structure described above serves as an electrical reference surface for characterizing the characteristic impedance of the signal transmission path. Then, in general, the characteristic impedance is selected to be 50Ω or more in the case of single-ended transmission, and 100Ω in the case of differential transmission.

此外,在前述電路基板的Zo,其值為每訊號傳送路徑單位長的電抗L,與前述訊號傳送路徑及接地層間之每單位面積靜電容量C的比(電抗L/靜電容量C)之平方根的近似值。Further, in the Zo of the circuit board, the value is the square root of the ratio of the reactance L per unit length of the signal transmission path to the capacitance C per unit area between the signal transmission path and the ground layer (reactance L/electrostatic capacitance C). approximation.

而,近年安裝前述元件的電路基板,多採用薄的剛性基板或可撓性電路基板,在採用此種電路基板的情況下,對前述接地層的訊號傳送路徑之層間為狹窄(薄),兩者間的靜電容量C值與前述層間的尺寸幾乎以反比升高。In recent years, a thin rigid substrate or a flexible circuit substrate is often used for a circuit board on which the above-mentioned components are mounted. When such a circuit board is used, the layers of the signal transmission path to the ground layer are narrow (thin), and two The electrostatic capacitance C value between the two increases almost in inverse proportion to the size of the aforementioned layer.

因此,在前述薄的多層結構的電路基板,為取得所需的前述Zo,不得不採取如下手段,亦即將前述訊號傳送路徑寬作成較以往厚層間的電路基板窄(細),以抑制前述容量C之上升。Therefore, in the above-described thin multilayer circuit board, in order to obtain the aforementioned Zo, it is necessary to adopt a method in which the signal transmission path width is made narrower (thinner) than the conventional thick circuit board to suppress the aforementioned capacity. The rise of C.

如此,為取得所需的Zo,在欲形成較細的訊號電路時,就會發生訊號電路纖細至加工困難的情況。又,即使訊號電路可以加工,但訊號電路越細,電路加工精度及線寬參差不齊的比率越高,隨之,Zo參差不齊的情況越嚴重。Thus, in order to obtain the required Zo, when a thin signal circuit is to be formed, the signal circuit is slender and difficult to process. Moreover, even if the signal circuit can be processed, the finer the signal circuit, the higher the processing precision and the unevenness of the line width, and the worse the Zo is.

因此,在前述Zo變化大的訊號電路部分,將引發訊號反射及波形失真的問題。再者,由於訊號電路的電路阻抗值變高,故供給於其的訊號頻率越高,而成為傳送特性惡化的主要原因。Therefore, in the signal circuit portion where the Zo changes greatly, the problem of signal reflection and waveform distortion will be caused. Further, since the circuit impedance value of the signal circuit becomes high, the signal frequency supplied thereto is higher, which is a cause of deterioration in transmission characteristics.

於是,為解決前述技術性課題,提出將作為所謂β電極層而形成的前述接地層鏤空成網狀,讓每單位面積接地層與訊號電路的對向面積實質變小,以確保前述訊號電路寬的技術,此係公開於特開平7-321463號公報。Therefore, in order to solve the above-mentioned technical problems, it is proposed that the ground layer formed as a so-called beta electrode layer is hollowed out into a mesh shape, so that the opposing area of the ground layer and the signal circuit per unit area is substantially reduced to ensure the width of the signal circuit. The technique is disclosed in Japanese Laid-Open Patent Publication No. Hei 7-321463.

然,在前述先前技術文獻公開的微帶結構之電路基板,前述接地層側雖可有效作為EMI(電磁波障礙)之對策,但是在相反面的訊號電路側,效果卻不如預期。However, in the circuit board of the microstrip structure disclosed in the above prior art, the ground layer side can effectively serve as a countermeasure against EMI (electromagnetic wave obstacle), but the effect on the opposite side of the signal circuit side is not as expected.

於是,考慮在有需要EMI對策之信號電路的外側表層(絕緣被覆層)上,覆蓋以例如銀膏等作成的導電性遮蔽層,而實質性的做成帶狀結構。Then, it is considered that the outer surface layer (insulating coating layer) of the signal circuit requiring EMI countermeasures is covered with a conductive shielding layer made of, for example, silver paste, and is substantially formed into a strip structure.

然而,在信號電路的表層側配置前述遮蔽層的情況下,訊號電路與前述絕緣被覆層上之遮蔽層間,電容耦合將重新發生。However, in the case where the shielding layer is disposed on the surface layer side of the signal circuit, capacitive coupling occurs again between the signal circuit and the shielding layer on the insulating coating layer.

意即,訊號電路係在與接地層間的靜電容量,加入與遮蔽層間的靜電容量,因此,控制訊號傳送路徑的Zo將變困難。That is, the electrostatic capacitance between the signal circuit and the ground layer is added to the electrostatic capacitance between the shielding layer, and therefore, it is difficult to control the Zo of the signal transmission path.

本發明係著眼於前述技術性問題而完成者,其課題在提供具有可確實充分進行訊號傳送路徑之特性阻抗之控制,且在前述EMI對策上可發揮效果之可進行單端傳送的訊號電路之電路基板、以及具有可差動傳送的線對訊號電路之電路基板。The present invention has been made in view of the above-mentioned technical problems, and it is an object of the present invention to provide a signal circuit capable of performing single-ended transmission, which has a characteristic impedance that can surely sufficiently perform a signal transmission path and which has an effect in the aforementioned EMI countermeasures. A circuit board and a circuit board having a differentially coupled line pair signal circuit.

本發明中,用以解決前述課題的電路基板,其係由接地層及透過絕緣體層對前述接地層配設訊號電路而成,並藉由控制前述接地層與訊號電路間的電容耦合,來進行前述訊號電路之特性阻抗之控制;又在配設於前述絕緣體層的訊號電路上,形成絕緣被覆層,透過前述絕緣被覆層,進一步以導電性素材形成遮蔽層,並且,在與前述訊號電路對峙的前述絕緣被覆層上,形成未鋪設前述遮蔽層的遮蔽層開口部。In the present invention, a circuit board for solving the above problem is formed by disposing a signal circuit on the ground layer by a ground layer and a transmission insulator layer, and controlling capacitive coupling between the ground layer and the signal circuit. Controlling the characteristic impedance of the signal circuit; forming an insulating coating layer on the signal circuit disposed on the insulator layer, and further forming a shielding layer with a conductive material through the insulating coating layer, and facing the signal circuit The shielding layer opening portion on which the shielding layer is not laid is formed on the insulating coating layer.

接著,當前述進行特性阻抗之控制的前述訊號電路係單端傳送之訊號電路的情況下,當令前述絕緣體層厚度為t1時,前述進行特性阻抗之控制的前述訊號電路之兩外側與前述遮蔽層開口緣之間的距離U最好設定在3t1≦U≦20t1。Next, in the case where the signal circuit for controlling the characteristic impedance is a single-ended signal circuit, when the thickness of the insulator layer is t1, both outer sides of the signal circuit for controlling the characteristic impedance and the shielding layer are provided. The distance U between the opening edges is preferably set at 3t1 ≦ U ≦ 20 t1.

又,前述進行特性阻抗之控制的前述訊號電路係差動傳送的對電路的情況下,當令前述對電路間的線間距離為S時,前述對電路的兩外側與前述遮蔽層的開口緣之距離U最好設定在3S≦U≦20S。Further, in the case where the signal circuit for performing the characteristic impedance control is differentially transmitted, when the distance between the lines of the pair of circuits is S, the outer sides of the pair of circuits and the opening edge of the shielding layer are The distance U is preferably set at 3S≦U≦20S.

在此情況下,與前述進行特性阻抗之控制的訊號電路對峙的前述接地層,係作成已施加多數鏤空孔的網狀導體部,前述網狀導體部的外側係作成未施加鏤空孔的β電極領域,且較佳者為前述網狀導體部與β電極領域的邊界係在與基板面直交的方向,與前述遮蔽層開口緣一致。In this case, the ground layer facing the signal circuit for controlling the characteristic impedance is a mesh conductor portion to which a plurality of hollow holes are applied, and the outer side of the mesh conductor portion is a beta electrode to which no void is applied. In the field, it is preferable that the boundary between the mesh conductor portion and the β electrode region is orthogonal to the substrate surface in a direction orthogonal to the substrate surface.

前述接地層與前述訊號電路間的前述絕緣體層、及前述訊號電路與前記遮蔽層間的前述絕緣被覆層,分別形成厚度100μm以下的薄電路基板,可發揮顯著效果。A thin circuit board having a thickness of 100 μm or less is formed in the insulating layer between the ground layer and the signal circuit, and the insulating coating layer between the signal circuit and the front shielding layer, respectively, and exhibits a remarkable effect.

此外,亦可採用一種電路基板,其中,作成與前述接地層同電位的線狀保護圖案,係沿著進行前述單端傳送的訊號電路兩外側,配設在前述絕緣體層上,而前述線狀保護圖案的寬度方向的中央部,係位在前述遮蔽層的開口緣。Further, a circuit board in which a linear protection pattern having the same potential as the ground layer is disposed on both sides of the signal circuit for performing the single-ended transmission, and the linear layer is disposed on the insulating layer The central portion of the protective pattern in the width direction is tied to the opening edge of the shielding layer.

在此情況的較佳形態下,前述接地層與前述線狀保護圖案係透過通孔連接,前述線狀保護圖案與前述遮蔽層係透過形成於前述絕緣被覆層的開口連接。In a preferred aspect of the above aspect, the ground layer is connected to the linear protection pattern through the through hole, and the linear protection pattern and the shielding layer are connected to an opening formed in the insulating coating layer.

根據前述電路基板,則在與有需進行Zo之控制的訊號電路對峙的絕緣被覆層上,作成未鋪設遮蔽層的遮蔽層開口部,因此,在前述訊號電路中,將能大幅降低與遮蔽層間的靜電電容耦合程度,藉此,就能確實進行訊號電路的特性阻抗之控制。According to the circuit board described above, since the shielding layer opening portion in which the shielding layer is not disposed is formed on the insulating coating layer facing the signal circuit in which the control of Zo is required, the signal circuit can be significantly reduced between the shielding layer and the shielding layer. The degree of electrostatic capacitance coupling, whereby the control of the characteristic impedance of the signal circuit can be surely performed.

另一方面,前述訊號電路雖因在前述遮蔽層形成有開口部,而導致遮蔽效果略有下降,然而可提供一種在前述EMI對策能發揮確實效果的電路基板。On the other hand, in the signal circuit, since the opening portion is formed in the shielding layer, the shielding effect is slightly lowered. However, it is possible to provide a circuit board capable of exhibiting a satisfactory effect in the EMI countermeasure.

以下就本發明相關之具可單端傳送之訊號電路的電路基板,以第一圖至第五圖進行說明,就本發明相關之具差動傳送之線對訊號電路的電路基板,以第六圖至第十圖進行說明。The following is a circuit board of a signal circuit capable of single-ended transmission according to the present invention, which is described in the first to fifth figures, and the circuit board of the line-to-signal circuit with differential transmission according to the present invention is sixth. The figure is illustrated in the tenth figure.

第一A圖為以截面圖表示具可單端傳送之訊號電路的電路基板之第一實施形態之層積結構,第二B圖為以幾乎相同比例尺表示第一A圖所示之絕緣體層上之訊號電路部分的平面圖。1A is a cross-sectional view showing a laminated structure of a first embodiment of a circuit board having a signal circuit capable of single-ended transmission, and FIG. 2B is a view showing an insulator layer shown in FIG. A plan view of the signal circuit portion.

第一A圖及第一B圖所示的電路基板,係由接地層及透過絕緣體層對前述接地層配設用以進行單端傳送的訊號電路,有需進行特性阻抗之控制的訊號電路係構成微帶結構;無需進行特性阻抗之控制的訊號電路係附加遮蔽層而構成帶狀線結構。The circuit board shown in FIG. 1A and FIG. B is a signal circuit for performing single-ended transmission on the ground layer by a ground layer and a transmission insulator layer, and a signal circuit system for controlling characteristic impedance is required. The microstrip structure is formed; a signal circuit that does not require control of the characteristic impedance is added with a shielding layer to form a stripline structure.

在本實施形態,採用薄膜狀基礎基材作為前述絕緣體層2,在前述絕緣體層2另一面(第一A圖的上側),形成有前述訊號電路3A、3B,前述訊號電路3A、3B的上面(第一A圖的上側),透過圖式中未顯示的接著層而層積有絕緣被覆層4。In the present embodiment, a film-shaped base substrate is used as the insulator layer 2, and the signal circuits 3A and 3B and the upper surface of the signal circuits 3A and 3B are formed on the other surface of the insulator layer 2 (on the upper side of the first A-picture). (Upper side of the first A diagram), the insulating coating layer 4 is laminated through an adhesive layer not shown in the drawings.

另一方面,在前述絕緣體層2另一面(第一A圖的下側)形成接地層5,更在前述接地層5的下面,透過圖式中未顯示的接著層,層積第二絕緣被覆層6。On the other hand, a ground layer 5 is formed on the other surface of the insulator layer 2 (the lower side of the first A-picture), and a second insulating coating is laminated on the lower surface of the ground layer 5 through an adhesive layer not shown in the drawing. Layer 6.

接著,隔著前述絕緣體層2即與前述接地層5反面之覆蓋前述訊號電路3A、3B的絕緣被覆層4上,利用導電性素材形成遮蔽層7,並且在與有需進行特性阻抗之控制的前述訊號電路3A對峙的絕緣被覆層4上,作成未鋪設前述遮蔽層的遮蔽層開口部7a。Next, the shielding layer 7 is formed of a conductive material via the insulating layer 2, that is, the insulating coating layer 4 covering the signal circuits 3A and 3B on the reverse side of the ground layer 5, and is controlled by characteristic impedance. The shielding layer opening portion 7a on which the shielding layer is not laid is formed on the insulating coating layer 4 of the surface of the signal circuit 3A.

作為配置前述訊號電路之中央絕緣體層的絕緣體層2,具電路基板1核心的功能,前述絕緣體層2的素材可舉樹脂薄膜、纖維基材等。The insulator layer 2 on which the central insulator layer of the signal circuit is disposed has a function as a core of the circuit board 1. The material of the insulator layer 2 may be a resin film or a fiber substrate.

構成前述樹脂薄膜的素材,可舉例如聚醯亞胺樹脂、聚醯胺樹脂、聚醯胺-醯亞胺樹脂等聚醯亞胺樹脂、環氧樹脂等熱硬化性樹脂、液晶聚合物等熱塑性樹脂。The material constituting the resin film may, for example, be a polyimide resin such as a polyimide resin, a polyamide resin or a polyimide resin, a thermosetting resin such as an epoxy resin, or a thermoplastic such as a liquid crystal polymer. Resin.

其中,以使用聚醯亞胺樹脂或液晶聚合物為佳。例如聚醯亞胺樹脂,其耐熱性、機械特性佳,且容易取得。又,液晶聚合物,其比介電率低,適合用於高速訊號傳送,且因吸濕性低,故穩定性佳。Among them, it is preferred to use a polyimine resin or a liquid crystal polymer. For example, a polyimide resin is excellent in heat resistance and mechanical properties, and is easily available. Further, the liquid crystal polymer has a lower specific dielectric ratio and is suitable for high-speed signal transmission, and has low stability due to low hygroscopicity.

又,用於絕緣體層的纖維基材,可舉如玻璃織布、玻璃不織布等玻璃纖維基材,或以玻璃以外的無機化合物為成分的織布或不織布等無機纖維基材、聚芳醯胺樹脂、聚醯胺樹脂、聚芳香酯樹脂、聚酯樹脂、聚醯亞胺樹脂、氟樹脂等有機繊維構成的有機纖維基材等。前述基材之中,在強度及吸水率方面,以選擇玻璃織布為代表的玻璃纖維基材為佳。In addition, the fiber base material used for the insulator layer may be a glass fiber base material such as a glass woven fabric or a glass non-woven fabric, or an inorganic fiber base material such as a woven fabric or a non-woven fabric containing inorganic compounds other than glass, or a polyarylamine. An organic fiber base material composed of an organic resin such as a resin, a polyamide resin, a polyarylate resin, a polyester resin, a polyimide resin, or a fluororesin. Among the above-mentioned base materials, a glass fiber base material typified by selection of a glass woven fabric is preferable in terms of strength and water absorption.

於前述絕緣體層使用纖維基材的情況下,宜在樹脂浸滲於前述纖維基材的狀態下使用。以浸滲於前述纖維基材的樹脂而言,可使用環氧樹脂、丙烯酸樹脂等熱硬化樹脂,從耐熱性方面來說,上述之中以環氧樹脂為佳。When a fibrous base material is used for the insulator layer, it is preferred to use the resin in a state in which the resin is impregnated into the fibrous base material. For the resin impregnated into the fiber base material, a thermosetting resin such as an epoxy resin or an acrylic resin can be used, and from the viewpoint of heat resistance, an epoxy resin is preferable among the above.

前述絕緣體層2的厚度t1以10~30μm的範圍為佳,而5~50μm的範圍較佳,1~100μm的範圍更佳。The thickness t1 of the insulator layer 2 is preferably in the range of 10 to 30 μm, preferably in the range of 5 to 50 μm, and more preferably in the range of 1 to 100 μm.

藉由使前述絕緣體層2的厚度在前述下限值以上,則容易使訊號線寬在加工界限以上;另一方面,藉由使前述厚度在上限值以下,就能抑制剛性過高,可保持柔軟這項可撓性電路基板等薄基板的特徵。When the thickness of the insulating layer 2 is equal to or higher than the lower limit value, the signal line width is likely to be equal to or higher than the processing limit. On the other hand, if the thickness is equal to or less than the upper limit value, the rigidity can be suppressed from being excessively high. The characteristics of a thin substrate such as a flexible circuit board are kept soft.

排列在前述絕緣體層2其中一面的訊號電路3A、3B可直接設在絕緣體層2,或亦可透過接著劑而設。然後,在各訊號電路端部或適當中間部,與圖式中未顯示的半導體元件等實裝墊片接合,作為電路基板1。The signal circuits 3A, 3B arranged on one side of the insulator layer 2 may be provided directly on the insulator layer 2 or may be provided through an adhesive. Then, at the end of each signal circuit or an appropriate intermediate portion, a dummy pad such as a semiconductor element not shown in the drawing is bonded to the circuit board 1.

隔著圖式中未顯示的接著層覆蓋前述訊號電路3A、3B的絕緣被覆層4,係以樹脂材料構成為佳。以前述樹脂材料而言,可例舉聚酯系樹脂、聚醯亞胺、液晶聚合物等。上述之中,以聚醯亞胺為佳,藉此可以提高耐熱性及撓曲性。It is preferable to cover the insulating coating layer 4 of the signal circuits 3A and 3B via an adhesive layer not shown in the drawings. The resin material may, for example, be a polyester resin, a polyimide, a liquid crystal polymer or the like. Among the above, polyienimine is preferred, whereby heat resistance and flexibility can be improved.

前述絕緣被覆層4的厚度t2以10~30μm為佳,5~50μm的範圍較佳,1~100μm的範圍更佳。The thickness t2 of the insulating coating layer 4 is preferably 10 to 30 μm, more preferably 5 to 50 μm, and even more preferably 1 to 100 μm.

藉由使絕緣被覆層4的厚度t2在前述下限值以上,可容易維持樹脂層的強度在實用範圍,在前述上限值以下,可容易使滑動性、撓曲性發揮到最大極限。By setting the thickness t2 of the insulating coating layer 4 to be equal to or higher than the lower limit value, the strength of the resin layer can be easily maintained in a practical range, and the slidability and the flexibility can be easily maximized below the upper limit.

此外,介於前述絕緣體層2與前述絕緣被覆層4之間之圖式中未顯示之接著層,其構成材料方面可以使用例如丙烯酸樹脂、環氧樹脂、聚醯亞胺樹脂等。上述之中以環氧樹脂為佳,藉此可以提高耐熱性及撓曲性。Further, an adhesive layer which is not shown in the drawings between the insulating layer 2 and the insulating coating layer 4 may be, for example, an acrylic resin, an epoxy resin, a polyimide resin or the like. Among the above, an epoxy resin is preferred, whereby heat resistance and flexibility can be improved.

配置在前述絕緣體層2另一面(背面)作為接地層5的導電部,係利用銅素材的導電體構成。前述導電體係在與有需進行特性阻抗之控制的前述訊號電路3A對峙的部分,形成有呈平行四邊形開口的多個鏤空孔,此外,前述接地層5的具體結構將以第二圖詳細說明於後。The other surface (back surface) of the insulating layer 2 is disposed as a conductive portion of the ground layer 5, and is formed of a conductor of a copper material. The conductive system is formed with a plurality of hollow holes having a parallelogram opening in a portion opposite to the signal circuit 3A having the characteristic impedance control. Further, the specific structure of the ground layer 5 will be described in detail in the second diagram. Rear.

在前述接地層5下側面(第一A圖下側),隔著圖式中未顯示的接著層而層積的第二絕緣被覆層6,宜以樹脂材料構成。以前述樹脂材料而言,可舉例如聚酯樹脂、聚醯亞胺、液晶聚合物等。The second insulating coating layer 6 laminated on the lower side surface of the ground layer 5 (the lower side of the first A drawing) via an adhesive layer not shown in the drawings is preferably made of a resin material. The resin material may, for example, be a polyester resin, a polyimide, a liquid crystal polymer or the like.

上述之中以聚醯亞胺為佳,藉此可以提高耐熱性及撓曲性。Among the above, polyienimine is preferred, whereby heat resistance and flexibility can be improved.

前述第二絕緣被覆層6的厚度並無特定限制,不過以5~50μm為佳,特別是10~30μm為佳。The thickness of the second insulating coating layer 6 is not particularly limited, but is preferably 5 to 50 μm, particularly preferably 10 to 30 μm.

藉由使絕緣被覆層6的厚度t2在前述下限值以上,可容易維持樹脂層的強度在實用範圍,在前述上限值以下,可容易使滑動性、撓曲性發揮到最大極限。By setting the thickness t2 of the insulating coating layer 6 to be equal to or higher than the lower limit value, the strength of the resin layer can be easily maintained in a practical range, and the slidability and the flexibility can be easily maximized below the upper limit.

此外,介於前述接地層5與前述第二絕緣被覆層6之間之圖式中未顯示之接著層,其構成材料,係與介於前述絕緣體層2與前述絕緣被覆層4之間圖式中未顯示之接著層的構成材料相同,可使用丙烯酸樹脂、環氧樹脂、聚醯亞胺樹脂等。其中,以環氧樹脂為佳,藉此可提高耐熱性及撓曲性。Further, an adhesive layer which is not shown in the drawings between the ground layer 5 and the second insulating coating layer 6 is composed of a material interposed between the insulator layer 2 and the insulating coating layer 4 The constituent materials of the adhesive layer not shown in the middle are the same, and an acrylic resin, an epoxy resin, a polyimide resin, or the like can be used. Among them, an epoxy resin is preferred, whereby heat resistance and flexibility can be improved.

又,形成於前述絕緣被覆層4上且以導電性素材形成的遮蔽層7,可利用導電性膏(銀膏)印刷或張貼導電性遮蔽膜來形成;與有需進行特性阻抗之控制的前述訊號電路3A對峙的部分,係如前述作成未鋪設遮蔽層7的遮蔽層開口部7a。Further, the shielding layer 7 formed on the insulating coating layer 4 and formed of a conductive material can be formed by printing or posting a conductive mask film with a conductive paste (silver paste); and the aforementioned control for controlling the characteristic impedance The portion of the signal circuit 3A facing the crucible is formed as the shielding layer opening portion 7a in which the shielding layer 7 is not laid as described above.

第二圖係將前述接地層5之一較佳結構局部放大顯示,又,第二圖中,係將有需進行特性阻抗之控制的前述訊號電路3A重疊於接地層5上的狀態,從與面直交方向透視的狀態表示。前述接地層5係如前述以銅素材的導電體構成,在前述導電體中與前述訊號電路3A對峙的位置,構成形成多個鏤空孔的網狀導體部5B。The second figure shows a part of the preferred structure of the ground layer 5 in a magnified manner. In the second figure, the signal circuit 3A having the characteristic impedance control is superimposed on the ground layer 5, and State representation of the perspective of the face orthogonal direction. The ground layer 5 is made of a conductor of a copper material as described above, and a mesh conductor portion 5B that forms a plurality of hollow holes is formed at a position facing the signal circuit 3A in the conductor.

意即,該實施形態之前述鏤空孔,形成雙向多數條線交叉之平行四邊形(菱形)的開口。前述雙向多數條線最好相對於訊號電路3A,個別以5~40度的範圍傾斜。且,其係呈前述菱形開口的長對角線與前述訊號電路3A的電路方向一致的網狀圖案。That is, the hollow hole of this embodiment forms an opening of a parallelogram (diamond) in which a plurality of lines intersect in a bidirectional direction. Preferably, the two-way plurality of lines are inclined with respect to the signal circuit 3A by a range of 5 to 40 degrees. Further, it is a mesh pattern in which the long diagonal line of the rhombic opening coincides with the circuit direction of the signal circuit 3A.

此外,前述各開口的大小(開口面積)可彼此不同,不過以作成相同大小的開口面積為佳,藉此可以準確進行訊號電路3A的特性阻抗之控制。Further, the sizes (opening areas) of the respective openings may be different from each other, but it is preferable to form an opening area of the same size, whereby the characteristic impedance of the signal circuit 3A can be accurately controlled.

另一方面,前述網狀導體部5B的外側,係作成由未形成鏤空孔的銅素材所形成的β電極領域5A。無需特別進行特性阻抗之控制的訊號電路3B,係與前述β電極領域5A對峙配置。On the other hand, the outer side of the mesh conductor portion 5B is formed as a beta electrode region 5A formed of a copper material in which no void holes are formed. The signal circuit 3B, which does not require special control of the characteristic impedance, is disposed opposite to the above-described β electrode field 5A.

根據第二圖所示結構,則僅有需進行特性阻抗之控制的部分構成網狀導體部5B,其他做為β電極領域5A,如此就能避免整個接地層6的阻抗升高。According to the configuration shown in the second figure, only the portion where the characteristic impedance is to be controlled constitutes the mesh conductor portion 5B, and the other portion is the β electrode region 5A, so that the impedance of the entire ground layer 6 can be prevented from rising.

此時,前述網狀導體部5B與β電極領域5A的界線,係在與基板面直交的方向,構成為與後述遮蔽層開口部7a的開口緣7b幾乎一致。At this time, the boundary between the mesh conductor portion 5B and the β electrode region 5A is formed in a direction orthogonal to the substrate surface, and is configured to substantially coincide with the opening edge 7b of the shielding layer opening portion 7a to be described later.

此外,為進行訊號電路的特性阻抗之控制,係如前述接地層5具備網狀導體部5B較為有效,但訊號電路的特性阻抗可以線寬或絕緣體層的厚度,或選擇絕緣體層的比介電率來進行控制,本發明中,具備網狀導體部5B並非要件。Further, in order to control the characteristic impedance of the signal circuit, it is effective that the ground layer 5 has the mesh conductor portion 5B, but the characteristic impedance of the signal circuit may be the line width or the thickness of the insulator layer, or the specific dielectric of the insulator layer is selected. In the present invention, the mesh conductor portion 5B is not required.

在該實施形態中,前述絕緣體層2的厚度t1及絕緣被覆層4的厚度t2等,任一者皆在100μm以下,係適合整個層積構造極薄的電路基板,因此,有需進行特性阻抗之控制的訊號電路3A與形成遮蔽層開口部7a的開口緣7b間的距離U,就支配了兩者電容耦合的程度。In this embodiment, the thickness t1 of the insulating layer 2 and the thickness t2 of the insulating coating layer 4 are all 100 μm or less, which is suitable for a circuit board having an extremely thin laminated structure. Therefore, it is necessary to perform characteristic impedance. The distance U between the controlled signal circuit 3A and the opening edge 7b forming the shielding layer opening 7a governs the degree of capacitive coupling between the two.

此時,進行特性阻抗之控制的前述訊號電路3A如前述具單端傳送功能,將前述絕緣體層2的厚度設在t1時,前述訊號電路3A的兩外側與前述遮蔽層的開口緣,其距離U設定在3t1≦U≦20t1的範圍,更佳的是設定在3t1≦U≦10t1。In this case, the signal circuit 3A for controlling the characteristic impedance has a single-ended transmission function, and when the thickness of the insulator layer 2 is set to t1, the distance between the outer sides of the signal circuit 3A and the opening edge of the shielding layer is U is set in the range of 3t1≦U≦20t1, and more preferably set to 3t1≦U≦10t1.

第三圖是令前述訊號電路3A的兩外側與前述遮蔽層7的開口緣7b之距離為U,令前述絕緣體層2的厚度為t1時,顯示出兩者之比的特性例,亦即,以橫軸表示U/t1,以縱軸表示訊號電路3A的特性阻抗Zo。The third diagram is a characteristic example in which the distance between the outer sides of the signal circuit 3A and the opening edge 7b of the shielding layer 7 is U, and when the thickness of the insulator layer 2 is t1, the ratio of the two is shown, that is, The horizontal axis represents U/t1, and the vertical axis represents the characteristic impedance Zo of the signal circuit 3A.

第三圖表示的特性例係訊號電路3A的線寬L作成100μm,絕緣體層2的層間厚度t1=25μm,網狀導體部5B的銅(導體)殘存率=30%之情況。且,前述網狀導體部5B與β電極領域5A的界線,係在與基板面直交的方向,構成為與後述遮蔽層開口部7a的開口緣7b幾乎一致。In the characteristic example shown in the third diagram, the line width L of the signal circuit 3A is 100 μm, the interlayer thickness t1 of the insulator layer 2 is 25 μm, and the residual ratio of copper (conductor) of the mesh conductor portion 5B is 30%. Further, the boundary between the mesh conductor portion 5B and the β electrode region 5A is formed in a direction orthogonal to the substrate surface, and is configured to substantially coincide with the opening edge 7b of the shielding layer opening portion 7a to be described later.

此時,區隔訊號電路3A與接地層5的絕緣體層2,其厚度(層間厚)t1就支配了兩者電容耦合的程度。因此,最好將前述絕緣體層2的厚度t1作為參數,來進行特性阻抗之控制的管理。At this time, the thickness (interlayer thickness) t1 of the insulator layer 2 of the segment signal circuit 3A and the ground layer 5 governs the degree of capacitive coupling between the two. Therefore, it is preferable to manage the control of the characteristic impedance by using the thickness t1 of the insulator layer 2 as a parameter.

又,前述訊號電路3A與前述遮蔽層7的開口緣7b,當其距離U在某種程度以下時,前述訊號電路3A與前述遮蔽層7間的電容耦合將變大,進行訊號電路的特性阻抗之控制也將變困難。意即,如第三圖的特性線圖所示,前述U的值不到3t1的情況下,前述電容耦合將急速變大,故必須避免。Further, when the distance between the signal circuit 3A and the opening edge 7b of the shielding layer 7 is less than a certain degree, the capacitive coupling between the signal circuit 3A and the shielding layer 7 becomes large, and the characteristic impedance of the signal circuit is performed. The control will also become difficult. In other words, as shown in the characteristic diagram of the third figure, when the value of U is less than 3t1, the capacitive coupling is rapidly increased, so it must be avoided.

反之,前述U的值超過3t1的情況下,前述遮蔽層7相對於有需進行特性阻抗之控制的訊號電路3A的電容耦合將急速減少,此時就能使以網狀導體部5B所獲致的訊號電路阻抗之控制的精度提高。On the other hand, when the value of U exceeds 3t1, the capacitive coupling of the shielding layer 7 with respect to the signal circuit 3A having the characteristic impedance control is rapidly reduced, and the mesh conductor portion 5B can be obtained at this time. The accuracy of the control of the impedance of the signal circuit is improved.

又,在前述絕緣被覆層4的厚度t2=100μm以下的條件下,進行相同測試,則驗證出,前述U的值在不到3t1的情況下,遮蔽層7相對於訊號電路3A的電容耦合將急速增大,訊號電路的特性阻抗也將變差,無論何者,其結果與第三圖所示的特性幾乎相同。Further, when the thickness of the insulating coating layer 4 is less than or equal to 100 μm, the same test is performed, and it is verified that when the value of U is less than 3t1, the capacitive coupling of the shielding layer 7 with respect to the signal circuit 3A will be With a rapid increase, the characteristic impedance of the signal circuit will also deteriorate, and the result will be almost the same as that shown in the third figure.

另一方面,前述U值若設得較大,對於訊號電路在特性阻抗設定的影響程度就會變小,但遮蔽效果就會降低,且在EMI對策上就無法被忽略。On the other hand, if the U value is set to a large value, the degree of influence on the characteristic impedance setting of the signal circuit becomes small, but the shielding effect is lowered, and the EMI countermeasure cannot be ignored.

且,為了確保對訊號電路的遮蔽效果,前述U的值宜在20t1以下,最好設定在10t1以下。Further, in order to secure the shielding effect on the signal circuit, the value of U is preferably 20 t1 or less, preferably 10 t1 or less.

因此,將具單端傳送功能的訊號電路3A的兩外側與前述遮蔽層的開口緣7b之距離U、以及前述絕緣體層2厚度t1的關係,設定在前述範圍,藉此就能提供一種調整訊號電路特性阻抗及EMI對策兼顧的電路基板。Therefore, the relationship between the distance between the outer side of the signal circuit 3A having the single-ended transmission function and the opening edge 7b of the shielding layer and the thickness t1 of the insulating layer 2 is set in the above range, thereby providing an adjustment signal. A circuit board that balances both circuit characteristic impedance and EMI countermeasures.

第四A圖表示有關進行單端傳送之本發明第二實施形態的電路基板之層積結構,第四B圖為以幾乎相同比例尺表示第四A圖所示之絕緣體層上之訊號電路部分的平面圖。4A is a view showing a laminated structure of a circuit board according to a second embodiment of the present invention for performing single-ended transmission, and FIG. 4B is a view showing a portion of the signal circuit on the insulator layer shown in FIG. Floor plan.

此外,在該第四A圖及第四B圖,以相同符號表示功能與已說明之第一A圖及第一B圖所示各部分相同者,且省略其詳細說明。接著,訊號電路3A的兩外側與前述遮蔽層的開口緣7b之距離U、與前述絕緣體層2厚度t1的關係,亦呈已依據第一A圖說明的前述關係。In addition, in the fourth A diagram and the fourth diagram B, the functions denoted by the same reference numerals are the same as those in the first A diagram and the first B diagram, and the detailed description thereof will be omitted. Next, the relationship between the distance U between the outer sides of the signal circuit 3A and the opening edge 7b of the shielding layer and the thickness t1 of the insulator layer 2 is also in the above-described relationship according to the first A diagram.

在該實施形態,作成與前述接地層5同電位的線狀保護圖案8,係沿著進行特性阻抗之控制的訊號電路3A的兩外側而配置在前述絕緣體層2上。接著,線狀保護圖案8在寬度方向的中央部,係位在前述遮蔽層7的開口緣7b。In this embodiment, the linear protection pattern 8 having the same potential as the ground layer 5 is disposed on the insulator layer 2 along both outer sides of the signal circuit 3A for controlling the characteristic impedance. Next, the linear protective pattern 8 is positioned at the central portion of the width direction in the opening edge 7b of the shielding layer 7.

根據前述的結構,有需進行特性阻抗之控制的訊號電路3A上面,因遮蔽層的開口部7a而呈現開放狀態,然而如第四A圖所示,以截面所見的訊號電路3A,其下方、兩側及上方兩側,以十分近接的接地所包圍,因此,可將EMI遮蔽特性的衰減降至最低。According to the above configuration, the signal circuit 3A having the characteristic impedance control needs to be in an open state due to the opening portion 7a of the shielding layer. However, as shown in FIG. 4A, the signal circuit 3A seen in the cross section is below, The sides and upper sides are surrounded by a very close grounding, thus minimizing the attenuation of EMI shielding characteristics.

第五A圖表示有關單端傳送之本發明第三實施形態的電路基板之層積結構,第五B圖為以幾乎相同比例尺表示第五A圖所示之絕緣體層上之訊號電路部分的平面圖。Fig. 5A is a plan view showing a laminated structure of a circuit board according to a third embodiment of the present invention relating to single-ended transmission, and Fig. 5B is a plan view showing a portion of the signal circuit on the insulator layer shown in Fig. 5A at substantially the same scale. .

該第五A圖及第五B圖所示結構是在前述第四A圖及第四B圖所示的第二實施形態進一步加入構成要件,前述接地層5與線狀保護圖案8係透過形成於絕緣體層2的通孔2a連接,前述線狀保護圖案8與前述遮蔽層7係透過形成於前述絕緣被覆層4的開口4a連接。The structures shown in the fifth A and fifth B are further incorporated in the second embodiment shown in the fourth A and fourth B, and the ground layer 5 and the linear protective pattern 8 are formed. The via hole 2a of the insulator layer 2 is connected, and the linear protection pattern 8 and the shielding layer 7 are connected to the opening 4a formed in the insulating coating layer 4.

連接前述接地層5與線狀保護圖案8的通孔2a,係如第五B圖所示,沿著線狀保護圖案8的長邊方向在多個地方形成,透過各通孔2a兩兩連接。The through hole 2a connecting the ground layer 5 and the linear protection pattern 8 is formed at a plurality of places along the longitudinal direction of the linear protection pattern 8 as shown in FIG. 5B, and is connected through the respective through holes 2a. .

又,形成於前述絕緣被覆層4的開口4a,亦沿著線狀保護圖案8的長邊方向,在多個地方形成,透過各開口4a將前述線狀保護圖案8與前述遮蔽層7連接。Moreover, the opening 4a formed in the insulating coating layer 4 is also formed in a plurality of places along the longitudinal direction of the linear protective pattern 8, and the linear protective pattern 8 is connected to the shielding layer 7 through the respective openings 4a.

前述結構可在未形成電路基板撓曲等部分適當採用,根據該結構,就能填補訊號電路3A兩外側接地間的空隙,以接地電位作用的接地層5、線狀保護圖案8、遮蔽層7在機械性上的結合也會變強,也有助提高EMI遮蔽特性。The above structure can be suitably employed in a portion where the circuit substrate is not bent, and according to the configuration, the gap between the two outer grounds of the signal circuit 3A can be filled, and the ground layer 5, the linear protection pattern 8, and the shielding layer 7 which are applied to the ground potential. The mechanical bond will also become stronger, which will also help improve EMI shielding characteristics.

接著,就具備本發明之差動傳送的對訊號電路之電路基板,以第六圖至第十圖進行說明。Next, a circuit board having a signal transmission circuit of the differential transmission of the present invention will be described with reference to FIGS. 6 to 10.

第六A圖表示具前述差動傳送之對訊號電路的電路基板第一實施形態之積層結構,第六B圖為以幾乎相同比例尺表示第六A圖所示之絕緣體層上之訊號電路部分的平面圖。6A is a view showing a laminated structure of a circuit board having the differential signal transmitting circuit of the first embodiment, and FIG. 6B is a view showing a portion of the signal circuit on the insulator layer shown in FIG. Floor plan.

第六A圖及第六B圖所示的電路基板1,係透過絕緣體層,對接地層與前述接地層配設訊號電路,就有需進行特性阻抗之控制的前述訊號電路(第六B圖以符號A所示的對電路),以微帶結構構成,另就無需進行特性阻抗之控制的訊號電路(第六B圖以符號B所示對電路),則附加遮蔽層構成帶狀線結構。The circuit board 1 shown in FIG. 6A and FIG. 6B is configured to transmit a signal circuit to the ground layer and the ground layer through an insulator layer, and the signal circuit for controlling the characteristic impedance is required (FIG. 6B The pair of circuits shown by the symbol A is formed by a microstrip structure, and a signal circuit for controlling the characteristic impedance is not required (the sixth B is shown by the symbol B), and the additional shielding layer constitutes a strip line structure.

在該實施形態,採用薄膜狀的基礎基材作為前述絕緣體層2,在前述絕緣體層2另一面(第六A圖上側),形成差動傳送的訊號電路3a、3b,在該訊號電路3a、3b的上面(第六A圖上側),透過圖式中未顯示的接著層,層積絕緣被覆層4。In this embodiment, a film-shaped base substrate is used as the insulator layer 2, and differential signal circuits 3a and 3b are formed on the other surface (upper side of FIG. AA) of the insulator layer 2, and the signal circuit 3a is formed in the signal circuit 3a. The upper surface of 3b (upper side of the sixth drawing A) is laminated with the insulating coating layer 4 through an adhesive layer not shown in the drawing.

另一方面,在前述絕緣體層2另一面(第六A圖下側),形成接地層5,該接地層5的下面透過圖式中未顯示的接著層,進一步形成第二絕緣被覆層6。On the other hand, on the other surface of the insulator layer 2 (the lower side of the sixth A diagram), the ground layer 5 is formed, and the lower surface of the ground layer 5 is further formed into a second insulating coating layer 6 through an adhesive layer not shown in the drawing.

接著,隔著前述絕緣體層2即與接地層5反面之覆蓋前述訊號電路的絕緣被覆層4上,利用導電性素材形成遮蔽層7,並在與需進行特性阻抗之控制的前述訊號電路3a、3b(第六B圖以符號A所示的對電路)對峙的絕緣被覆層7上,形成未鋪設前述遮蔽層的遮蔽層開口部7a。Next, the shielding layer 7 is formed of a conductive material via the insulating layer 2, that is, the insulating coating layer 4 covering the signal circuit opposite to the ground layer 5, and the signal circuit 3a is controlled by the characteristic impedance. 3b (the sixth circuit in Fig. B is indicated by the symbol A) is formed on the insulating coating layer 7 of the crucible, and the shielding layer opening portion 7a on which the shielding layer is not laid is formed.

又,在第六A圖及第六B圖所示之具差動傳送對訊號電路的電路基板1上,其層積結構係與已說明之第一A圖及第一B圖所示之具單端傳送的訊號電路之電路基板相同,而功能相同的各層以相同符號表示。因此,關於各層及圖式中未顯示的接著層等詳細內容省略其說明。Further, in the circuit board 1 having the differential transmission pair signal circuit shown in FIGS. 6A and 6B, the laminated structure is the same as that shown in the first A diagram and the first B diagram. The circuit board of the single-ended transmission signal circuit is the same, and the layers having the same function are denoted by the same symbols. Therefore, the detailed description of each layer and the subsequent layer not shown in the drawings will be omitted.

第七圖是將第六A圖所示之接地層5的一較佳結構予以局部放大顯示之圖。又,第七圖中,係將有需進行特性阻抗之控制的前述訊號電路3a、3b重疊於接地層5上的狀態,從與面直交方向透視的狀態表示。第七圖所示的接地層5,其結構與第二圖所示的接地層5相同,故關於功能相同的部分以相同符號表示。因此,接地層5的詳細結構亦省略其說明。The seventh figure is a partially enlarged view showing a preferred structure of the ground layer 5 shown in Fig. A. Further, in the seventh diagram, the state in which the signal circuits 3a and 3b which are required to control the characteristic impedance are superimposed on the ground layer 5 is shown in a state of seeing from the plane orthogonal direction. The ground layer 5 shown in the seventh embodiment has the same structure as the ground layer 5 shown in the second figure, and therefore the same portions are denoted by the same reference numerals. Therefore, the detailed structure of the ground layer 5 is also omitted.

在第六圖及第七圖所示的實施形態,前述絕緣體層2的厚度t1及絕緣被覆層4的厚度t2等,任一者皆設在100μm以下,整個層積結構適用極薄的電路基板,因此,有需進行特性阻抗之控制的訊號電路3a、3b與形成於遮蔽層的開口部7a之開口緣7b,其距離U就支配了兩者電容耦合的程度。In the embodiment shown in the sixth and seventh embodiments, the thickness t1 of the insulating layer 2 and the thickness t2 of the insulating coating layer 4 are set to 100 μm or less, and the entire laminated structure is applied to an extremely thin circuit substrate. Therefore, the signal circuits 3a and 3b which are required to control the characteristic impedance and the opening edge 7b formed in the opening portion 7a of the shielding layer have a distance U which governs the degree of capacitive coupling therebetween.

在此情況下,進行特性阻抗之控制的前述訊號電路為差動傳送的對電路,如第六A圖所示,當令前述訊號電路3a、3b間的線間距離為S時,位在該線間距離S的前述訊號電路兩外側與前述遮蔽層的開口緣7b,其距離U宜設在3S≦U≦20S,最好設在3S≦U≦10S。In this case, the signal circuit for controlling the characteristic impedance is a differential transmission pair circuit, as shown in FIG. 6A, when the line-to-line distance between the signal circuits 3a and 3b is S, the bit is located on the line. The distance between the two outer sides of the signal circuit S and the opening edge 7b of the shielding layer is preferably set at 3S≦U≦20S, preferably 3S≦U≦10S.

第八圖是以橫軸表示前述距離U與線間距離S的比意即U/S的值,以縱軸表示訊號電路3a、3b的特性阻抗Zo,所顯示的特性例。In the eighth diagram, the horizontal axis represents the ratio of the distance U to the line S, that is, the value of U/S, and the vertical axis represents the characteristic impedance Zo of the signal circuits 3a and 3b.

第八圖所示的特性例係作成差動訊號線之訊號電路3a、3b的線幅L/線間距離S=100μm/100μm,絕緣體層2的層間厚度t1=25μm,網狀導體部5B的銅(導體)殘存率=30%之情況。The characteristic example shown in the eighth figure is the line width L/line distance S=100 μm/100 μm of the signal circuits 3a and 3b which are formed as differential signal lines, the interlayer thickness t1 of the insulator layer 2 is 25 μm, and the mesh conductor portion 5B. The case where the residual ratio of copper (conductor) = 30%.

前述訊號電路3a、3b與前述遮蔽層7的開口緣7b之距離U,若在一定程度以下,則訊號電路與遮蔽層間的電容耦合變大,訊號電路的特性阻抗之控制將變困難。意即,如第八圖的特性線圖所示,前述U的值不到3S的情況下,前述電容耦合將急速變大,故需避免。When the distance U between the signal circuits 3a and 3b and the opening edge 7b of the shielding layer 7 is less than a certain level, the capacitive coupling between the signal circuit and the shielding layer becomes large, and the control of the characteristic impedance of the signal circuit becomes difficult. In other words, as shown in the characteristic diagram of the eighth figure, when the value of U is less than 3S, the capacitive coupling is rapidly increased, so it is necessary to avoid it.

反之,前述U的值在超過3S的情況下,前述遮蔽層7對有需進行特性阻抗之控制的訊號電路3a、3b的電容耦合將急速減少,就能使利用網狀導體部5B所獲致的訊號電路的阻抗之控制精度提高。On the other hand, when the value of U exceeds 3S, the capacitive coupling of the signal layer 3a, 3b having the characteristic impedance control by the shielding layer 7 is rapidly reduced, and the mesh conductor portion 5B can be obtained. The control accuracy of the impedance of the signal circuit is improved.

又,前述絕緣被覆層4的厚度在t2=100μm以下的條件下,進行相同測試,則驗證出,在前述U的值不到3S的情況下,遮蔽層7對訊號電路的電容耦合將急速變大,訊號電路的特性阻抗將變低,無論何者,其結果幾乎與第八圖所示的特性相同。Further, when the thickness of the insulating coating layer 4 was measured under the condition of t2 = 100 μm or less, it was verified that when the value of U was less than 3 S, the capacitive coupling of the shielding layer 7 to the signal circuit was rapidly changed. Large, the characteristic impedance of the signal circuit will become lower, and the result will be almost the same as that shown in the eighth figure.

另一方面,若前述U值設得較大,對訊號電路之特性阻抗的設定影響程度就會變小,但遮蔽效果則會降低,且在EMI對策上就無法被忽略。On the other hand, if the U value is set large, the degree of influence on the setting of the characteristic impedance of the signal circuit becomes small, but the shielding effect is lowered, and the EMI countermeasure cannot be ignored.

因此,為了確保對訊號電路的遮蔽效果,前述U值宜在20S以下,最好設在10S以下。Therefore, in order to ensure the shielding effect on the signal circuit, the U value is preferably 20 S or less, preferably 10 S or less.

因此,將前述對訊號電路的線間S、以及對電路的兩外側與前述遮蔽層的開口緣7b之距離U,兩者的關係設在前述範圍,藉此就能提供一種兼顧調整訊號電路特性阻抗及EMI對策的電路基板。Therefore, the relationship between the line S of the pair of signal circuits and the distance U between the outer sides of the pair of circuits and the opening edge 7b of the shielding layer is set to the above range, thereby providing a balance between the characteristics of the adjustment signal circuit. Circuit board for impedance and EMI countermeasures.

如前述所言,在前述訊號電路為差動傳送的對電路的情況下,將對電路的線間S作為參數,對電路的兩外側與前述遮蔽層的開口緣7b之距離U設在前述範圍,始能妥善管理。As described above, in the case where the signal circuit is a differential transmission pair circuit, the distance S between the both outer sides of the circuit and the opening edge 7b of the shielding layer is set in the foregoing range with the line S of the circuit as a parameter. It can be properly managed.

其理由在於,前述對電路的線間距離係繼前述遮蔽層對訊號電路的特性阻抗造成影響,因而前述訊號電路到遮蔽層開口緣的距離相對於線間距離,將決定對特性阻抗的影響大小程度。The reason is that the distance between the lines of the circuit is affected by the characteristic impedance of the shielding layer to the signal circuit. Therefore, the distance from the signal circuit to the opening edge of the shielding layer relative to the line distance determines the influence on the characteristic impedance. degree.

這是基於對電路的線間中央部存在假想接地(GND)面,且考慮訊號線側面的面積的關係,因此很容易判斷其距離將繼前述遮蔽層而對訊號電路的特性阻抗造成影響。於是,訊號線的特性阻抗由前述電路間的耦合決定,而以與前述訊號線間距離的關係,來敘述前述開口緣前方的遮蔽層幾乎不會對特性阻抗造成影響的距離。This is based on the fact that there is an imaginary ground (GND) plane in the center of the line between the lines, and considering the relationship of the area of the side of the signal line, it is easy to judge that the distance will affect the characteristic impedance of the signal circuit in accordance with the shielding layer. Therefore, the characteristic impedance of the signal line is determined by the coupling between the aforementioned circuits, and the relationship between the shielding layer in front of the opening edge and the characteristic impedance is hardly affected by the relationship with the distance between the signal lines.

第九A圖表示具差動傳送之對訊號電路的電路基板第二實施形態的層積結構,第九B圖為以幾乎相同比例尺表示第九A圖所示之絕緣體層上之訊號電路部分的平面圖。第九A圖及第九B圖所示的結構係與第六A圖及第六B圖所示的範例相同,係顯示有需進行特性阻抗之控制的訊號電路為差動傳送之對電路的範例。9A is a view showing a laminated structure of a second embodiment of a circuit board having a differential signal transmission circuit, and FIG. 9B is a view showing a signal circuit portion on the insulator layer shown in FIG. Floor plan. The structures shown in FIGS. 9A and 9B are the same as the examples shown in FIGS. 6A and 6B, showing that the signal circuit for which the characteristic impedance is to be controlled is a differential transmission pair circuit. example.

又,在第九A圖及第九B圖,係以相同符號表示功能與已說明之第六A圖及第六B圖所示各部位相同者,因而省略其詳細說明。其次,對電路的兩外側與前述遮蔽層的開口緣7b之距離U,係呈以對電路的線間S為參數的前述關係。In addition, in the ninth A diagram and the ninth diagram, the functions of the same reference numerals are the same as those of the parts shown in the sixth A diagram and the sixth diagram B, and the detailed description thereof will be omitted. Next, the distance U between the outer sides of the circuit and the opening edge 7b of the shielding layer is the aforementioned relationship with respect to the line S of the circuit.

在該實施形態,與前述接地層5同電位的線狀保護圖案8,係沿著進行特性阻抗之控制的訊號電路3a、3b兩外側,配設在前述絕緣體層2上。接著,前述線狀保護圖案8寬度方向的中央部是位在前述遮蔽層開口緣7b。In this embodiment, the linear protection pattern 8 having the same potential as the ground layer 5 is disposed on the insulator layer 2 along both outer sides of the signal circuits 3a and 3b for controlling the characteristic impedance. Next, the central portion of the linear protection pattern 8 in the width direction is located at the opening edge 7b of the shielding layer.

根據前述結構,有需進行特性阻抗之控制的訊號電路3a、3b的上面,因遮蔽層開口部7a而呈現開放狀態,然如第九A圖所示,以截面所見的訊號電路3a、3b,其下方、兩側及上方兩側,以十分近接之接地所包圍,因此,可將EMI遮蔽特性的衰減降至最低。According to the above configuration, the upper surfaces of the signal circuits 3a and 3b which are required to control the characteristic impedance are opened by the shielding layer opening portion 7a. However, as shown in FIG. 9A, the signal circuits 3a and 3b as seen in the cross section are The bottom, sides and upper sides are surrounded by a very close ground, so the attenuation of EMI shielding characteristics can be minimized.

進一步,第十A圖表示具差動傳送之對訊號電路的電路基板第三實施形態之層積結構,第十B圖為以幾乎相同比例尺表示第十A圖所示之絕緣體層上之訊號電路部分的平面圖。Further, FIG. 10A shows a laminated structure of a circuit board of a circuit board having a differential transmission signal circuit, and FIG. 10B shows a signal circuit on the insulator layer shown in FIG. Part of the floor plan.

第十A圖及第十B圖所示結構是,在前述第九A圖及第九B圖所示的第二實施形態中進一步加入構成要件,前述接地層5與線狀保護圖案8係透過形成於絕緣體層2的通孔2a連接,前述線狀保護圖案8與前述遮蔽層7係透過形成於前述絕緣被覆層4的開口4a連接。The structure shown in the tenth embodiment A and the tenth figure is that the constituent elements are further added to the second embodiment shown in the ninth A and ninth diagrams, and the ground layer 5 and the linear protection pattern 8 are transmitted through. The through holes 2a formed in the insulator layer 2 are connected, and the linear protective pattern 8 and the shielding layer 7 are connected to the opening 4a formed in the insulating coating layer 4.

連接前述接地層5與線狀保護圖案8的通孔2a,係如第十B圖所示,沿著線狀保護圖案8的長邊方向,在多個地方形成,透過各通孔2a兩兩連接。The through hole 2a connecting the ground layer 5 and the linear protection pattern 8 is formed in a plurality of places along the longitudinal direction of the linear protection pattern 8 as shown in FIG. 10B, and is transmitted through each of the through holes 2a. connection.

又,形成於前記絕緣被覆層4的開口4a,也沿著線狀保護圖案8的長邊方向,在多個地方形成,並透過各開口4a連接前述線狀保護圖案8與前述遮蔽層7。Further, the opening 4a formed in the insulating cover layer 4 is formed in a plurality of places along the longitudinal direction of the linear protective pattern 8, and the linear protective pattern 8 and the shielding layer 7 are connected through the respective openings 4a.

前述結構可在電路基板未撓曲等部分適當採用,根據該結構,可填補訊號電路兩外側接地間的空隙,而以接地電位作用的接地層5、線狀保護圖案8、遮蔽層7,其機械性結合也變強,亦有助提高EMI遮蔽特性。The above structure can be suitably employed in a portion where the circuit board is not bent, and according to the configuration, the gap between the two outer grounds of the signal circuit can be filled, and the ground layer 5, the linear protection pattern 8, and the shielding layer 7 which are applied by the ground potential can be filled. The mechanical bond also becomes stronger, which also helps to improve EMI shielding characteristics.

又,在具以上說明之單端傳送訊號電路的電路基板,及具差動傳送對訊號電路的電路基板之前述接地層,亦可做成以外加電路基準電位的結構,或也可重疊各元件的動作電源。因此,不特別限定外加於接地層的電位。Further, the circuit board having the single-ended transmission signal circuit described above and the ground layer of the circuit board having the differential transmission signal circuit may be configured to apply a circuit reference potential or may overlap each component. Action power. Therefore, the potential applied to the ground layer is not particularly limited.

本發明的電路基板可用在印刷電路板、可撓式印刷電路板、多層可撓印刷電路板等,特別適合用於組裝以高頻帶動作之元件的電路基板。The circuit board of the present invention can be used for a printed circuit board, a flexible printed circuit board, a multilayer flexible printed circuit board, etc., and is particularly suitable for assembling a circuit board of an element operating in a high frequency band.

1...電路基板1. . . Circuit substrate

2...絕緣體層2. . . Insulator layer

2a...通孔2a. . . Through hole

3A、3B...訊號電路3A, 3B. . . Signal circuit

3a、3b...訊號電路3a, 3b. . . Signal circuit

4...絕緣被覆層4. . . Insulating coating

4a...絕緣被覆層開口4a. . . Insulating coating opening

5...接地層5. . . Ground plane

5A...β電極領域5A. . . Beta electrode field

5B...網狀導體部5B. . . Mesh conductor

6...絕緣被覆層6. . . Insulating coating

7‧‧‧遮蔽層7‧‧‧shading layer

7a‧‧‧遮蔽層開口部7a‧‧‧Shading layer opening

7b‧‧‧開口緣7b‧‧‧Opening edge

8‧‧‧線狀保護圖案8‧‧‧Linear protection pattern

第一A圖係表示具單端傳送訊號電路的電路基板第一實施形態的層積結構圖之截面圖。Fig. 1A is a cross-sectional view showing a laminated structure diagram of a first embodiment of a circuit board having a single-ended transmission signal circuit.

第一B圖係表示第一A圖所示的絕緣體層上之訊號電路部分之平面圖。Figure 1B is a plan view showing the portion of the signal circuit on the insulator layer shown in Figure A.

第二圖係表示在具單端傳送訊號電路的電路基板上的接地層較佳範例之一之平面圖。The second drawing shows a plan view of one of the preferred examples of the ground layer on the circuit substrate having the single-ended transmission signal circuit.

第三圖為係表示單端傳送訊號電路與遮蔽層開口緣的距離U,及層間厚t1間的關係之特性線圖。The third figure is a characteristic line diagram showing the relationship between the distance U between the single-ended transmission signal circuit and the opening edge of the shielding layer, and the relationship between the interlayer thicknesses t1.

第四A圖係表示具單端傳送訊號電路的電路基板第二實施形態的層積結構圖之截面圖。Fig. 4A is a cross-sectional view showing a laminated structure diagram of a second embodiment of a circuit board having a single-ended transmission signal circuit.

第四B圖係表示第四A圖所示的絕緣體層上之訊號電路部分之平面圖。Figure 4B is a plan view showing a portion of the signal circuit on the insulator layer shown in Figure 4A.

第五A圖係表示具單端傳送訊號電路的電路基板第三實施形態的層積結構圖之截面圖。Fig. 5A is a cross-sectional view showing a laminated structure diagram of a third embodiment of a circuit board having a single-ended transmission signal circuit.

第五B圖係表示第五A圖所示的絕緣體層上之訊號電路部分之平面圖。Figure 5B is a plan view showing a portion of the signal circuit on the insulator layer shown in Figure 5A.

第六A圖係表示具差動傳送對訊號電路的電路基板第一實施形態的層積結構圖之截面圖。Fig. 6A is a cross-sectional view showing a laminated structure diagram of a first embodiment of a circuit board having a differential transmission versus signal circuit.

第六B圖係表示第六A圖所示的絕緣體層上之訊號電路部分之平面圖。Figure 6B is a plan view showing a portion of the signal circuit on the insulator layer shown in Figure 6A.

第七圖係表示在具差動傳送對訊號電路的電路基板的接地層較佳範例之一之平面圖,。The seventh drawing is a plan view showing one of preferred examples of the ground layer of the circuit substrate having the differential transmission signal circuit.

第八圖係表示具差動傳送對訊號電路與遮蔽層開口緣的距離U,及線間距離S間的關係之特性線圖。The eighth figure shows a characteristic line diagram showing the relationship between the distance U of the differential transmission pair signal circuit and the opening edge of the shielding layer, and the relationship between the line distances S.

第九A圖係表示具差動傳送對訊號電路的電路基板第二實施形態的層積結構圖之截面圖。Figure 9 is a cross-sectional view showing a laminated structure diagram of a second embodiment of a circuit board having a differential transmission versus signal circuit.

第九B圖係表示第九A圖所示的絕緣體層上之訊號電路部分之平面圖。Figure IX is a plan view showing a portion of the signal circuit on the insulator layer shown in Figure IX.

第十A圖係具差動傳送線對訊號電路的電路基板之第三實施形態的層積結構圖。Fig. 10A is a view showing a laminated structure of a third embodiment of a circuit board having a differential transmission line pair signal circuit.

第十B圖係表示第十A圖所示的絕緣體層上之訊號電路部分之平面圖。Fig. 10B is a plan view showing a portion of the signal circuit on the insulator layer shown in Fig. A.

1...電路基板1. . . Circuit substrate

2...絕緣體層2. . . Insulator layer

3A、3B...訊號電路3A, 3B. . . Signal circuit

4...絕緣被覆層4. . . Insulating coating

5...接地層5. . . Ground plane

5B...網狀導體部5B. . . Mesh conductor

6...絕緣被覆層6. . . Insulating coating

7...遮蔽層7. . . Masking layer

7a...遮蔽層開口部7a. . . Occlusion layer opening

7b...開口緣7b. . . Opening edge

Claims (6)

一種電路基板,其係由接地層及透過絕緣體層對前述接地層配設訊號電路而成,並藉由控制前述接地層與前述訊號電路間的電容耦合,來進行前述訊號電路之特性阻抗之控制;又在配設於前述絕緣體層的前述訊號電路上,形成絕緣被覆層,透過前述絕緣被覆層,進一步以導電性素材形成遮蔽層,並且,在與前述訊號電路對峙的前述絕緣被覆層上,形成未鋪設前述遮蔽層的遮蔽層開口部,前述進行特性阻抗之控制的前述訊號電路為單端傳送的訊號電路,且當令前述絕緣體層厚度為t1時,前述進行特性阻抗之控制的前述訊號電路之兩外側與前述遮蔽層開口緣之間的距離U係設定在3t1≦U≦20t1。 A circuit board formed by disposing a signal circuit on the ground layer by a ground layer and a transmission insulator layer, and controlling the characteristic impedance of the signal circuit by controlling capacitive coupling between the ground layer and the signal circuit Further, an insulating coating layer is formed on the signal circuit disposed on the insulator layer, and the insulating coating layer is further formed to form a shielding layer by a conductive material, and on the insulating coating layer facing the signal circuit. Forming an opening of the shielding layer in which the shielding layer is not laid, the signal circuit for controlling the characteristic impedance is a signal circuit for single-ended transmission, and when the thickness of the insulating layer is t1, the signal circuit for controlling the characteristic impedance is formed. The distance U between the outer sides of the shielding layer and the opening edge of the shielding layer is set at 3t1≦U≦20t1. 如專利申請範圍第1項所述之電路基板,其中與前述進行特性阻抗之控制的前述訊號電路對峙的前述接地層,係作成已施加多數鏤空孔的網狀導體部,前述網狀導體部的外側係作成未施加鏤空孔的β電極領域,前述網狀導體部與β電極領域的邊界係在與基板面直交的方向,與前述遮蔽層開口緣一致。 The circuit board according to claim 1, wherein the ground layer opposite to the signal circuit for controlling the characteristic impedance is a mesh conductor portion to which a plurality of hollow holes are applied, and the mesh conductor portion is The outer side is in the field of the β electrode to which the vacant hole is not applied, and the boundary between the mesh conductor portion and the β electrode region is in a direction orthogonal to the substrate surface, and coincides with the opening edge of the shielding layer. 如專利申請範圍第1項所述之電路基板,其中前述接地層與前述訊號電路間的前述絕緣體層係具有100μm以下的厚度。 The circuit board according to claim 1, wherein the insulator layer between the ground layer and the signal circuit has a thickness of 100 μm or less. 如專利申請範圍第1項所述之電路基板,其中前述訊號電路與前記遮蔽層間的前述絕緣被覆層係具有100μm以下的厚度。 The circuit board according to the first aspect of the invention, wherein the insulating coating layer between the signal circuit and the pre-masking layer has a thickness of 100 μm or less. 如專利申請範圍第1或4項所述之電路基板,其中作成與 前述接地層同電位的線狀保護圖案,係沿著進行前述單端傳送的訊號電路兩外側,配設在前述絕緣體層上,而前述線狀保護圖案的寬度方向的中央部,係位在前述遮蔽層的開口緣。 a circuit substrate as described in claim 1 or 4, wherein The linear protection pattern of the ground layer having the same potential is disposed on the outer side of the signal circuit along the single-ended transmission, and the central portion of the linear protection pattern in the width direction is located in the foregoing The opening edge of the shielding layer. 如專利申請範圍第5項所述之電路基板,其中前述接地層與前述線狀保護圖案係透過通孔連接,前述線狀保護圖案與前述遮蔽層係透過形成於前述絕緣被覆層的開口連接。 The circuit board according to claim 5, wherein the ground layer is connected to the linear protection pattern through the through hole, and the linear protection pattern and the shielding layer are connected to an opening formed in the insulating coating layer.
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