TWI492266B - Plasma processing device and plasma processing method - Google Patents
Plasma processing device and plasma processing method Download PDFInfo
- Publication number
- TWI492266B TWI492266B TW100111328A TW100111328A TWI492266B TW I492266 B TWI492266 B TW I492266B TW 100111328 A TW100111328 A TW 100111328A TW 100111328 A TW100111328 A TW 100111328A TW I492266 B TWI492266 B TW I492266B
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- Prior art keywords
- plasma processing
- spacer
- dielectric plate
- processing apparatus
- plasma
- Prior art date
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
- H01J2237/166—Sealing means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010081984 | 2010-03-31 | ||
| JP2010221270 | 2010-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201207885A TW201207885A (en) | 2012-02-16 |
| TWI492266B true TWI492266B (zh) | 2015-07-11 |
Family
ID=44762647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100111328A TWI492266B (zh) | 2010-03-31 | 2011-03-31 | Plasma processing device and plasma processing method |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101389247B1 (ja) |
| CN (1) | CN102753727A (ja) |
| TW (1) | TWI492266B (ja) |
| WO (1) | WO2011125704A1 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI841890B (zh) * | 2021-01-04 | 2024-05-11 | 南韓商Ｐｓｋ有限公司 | 處理基板之設備 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI467174B (zh) * | 2012-10-19 | 2015-01-01 | Mfc Sealing Technology Co Ltd | 密封件的測試方法 |
| JP6063741B2 (ja) * | 2012-12-28 | 2017-01-18 | 東京エレクトロン株式会社 | プラズマ処理容器及びプラズマ処理装置 |
| TWI628689B (zh) * | 2013-05-09 | 2018-07-01 | 瑪森科技公司 | 用於保護電漿處理系統中之真空密封的系統與方法 |
| KR102178150B1 (ko) * | 2013-08-16 | 2020-11-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 장비를 위한 밀봉 홈 방법 |
| CN103871902A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 半导体处理工艺及半导体器件的制备方法 |
| CN104701157A (zh) * | 2015-03-31 | 2015-06-10 | 上海华力微电子有限公司 | 具有降低边缘刻蚀速率之顶部圆盘的等离子体刻蚀设备 |
| CN104766778A (zh) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | 等离子体刻蚀设备之腔体密封面保护装置 |
| JP6479550B2 (ja) * | 2015-04-22 | 2019-03-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10738381B2 (en) | 2015-08-13 | 2020-08-11 | Asm Ip Holding B.V. | Thin film deposition apparatus |
| JP6587992B2 (ja) * | 2016-08-30 | 2019-10-09 | 日立Ｇｅニュークリア・エナジー株式会社 | 原子炉再循環ポンプ用プラグ |
| CN106122475A (zh) * | 2016-08-31 | 2016-11-16 | 西峡县内燃机进排气管有限责任公司 | 一种用于机械产品的端面密封结构 |
| JP7051301B2 (ja) * | 2017-03-31 | 2022-04-11 | 芝浦メカトロニクス株式会社 | プラズマ処理装置 |
| CN110933956A (zh) * | 2018-07-20 | 2020-03-27 | 株式会社日立高新技术 | 等离子处理装置 |
| JP7316863B2 (ja) * | 2019-07-19 | 2023-07-28 | 東京エレクトロン株式会社 | 第一導電性部材と第二導電性部材の接合構造と接合方法、及び基板処理装置 |
| CN112922935B (zh) * | 2019-12-05 | 2023-06-30 | 中微半导体设备(上海)股份有限公司 | 连接结构和等离子体处理装置 |
| WO2024202708A1 (ja) * | 2023-03-29 | 2024-10-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214180A (ja) * | 1986-03-13 | 1987-09-19 | Hitachi Electronics Eng Co Ltd | プラズマ気相反応装置 |
| KR20040037288A (ko) * | 2002-10-28 | 2004-05-07 | 삼성전자주식회사 | 플라즈마 처리장치 |
| CN101005013A (zh) * | 2006-01-16 | 2007-07-25 | 东京毅力科创株式会社 | 减压容器和减压处理装置 |
| JP2008147420A (ja) * | 2006-12-11 | 2008-06-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| TW201001480A (en) * | 2007-06-11 | 2010-01-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
-
2011
- 2011-03-30 KR KR1020127028202A patent/KR101389247B1/ko active IP Right Grant
- 2011-03-30 CN CN2011800069001A patent/CN102753727A/zh active Pending
- 2011-03-30 WO PCT/JP2011/057957 patent/WO2011125704A1/ja active Application Filing
- 2011-03-31 TW TW100111328A patent/TWI492266B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214180A (ja) * | 1986-03-13 | 1987-09-19 | Hitachi Electronics Eng Co Ltd | プラズマ気相反応装置 |
| KR20040037288A (ko) * | 2002-10-28 | 2004-05-07 | 삼성전자주식회사 | 플라즈마 처리장치 |
| CN101005013A (zh) * | 2006-01-16 | 2007-07-25 | 东京毅力科创株式会社 | 减压容器和减压处理装置 |
| JP2008147420A (ja) * | 2006-12-11 | 2008-06-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| TW201001480A (en) * | 2007-06-11 | 2010-01-01 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI841890B (zh) * | 2021-01-04 | 2024-05-11 | 南韓商Ｐｓｋ有限公司 | 處理基板之設備 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201207885A (en) | 2012-02-16 |
| WO2011125704A9 (ja) | 2012-02-23 |
| KR101389247B1 (ko) | 2014-04-24 |
| KR20130023220A (ko) | 2013-03-07 |
| WO2011125704A1 (ja) | 2011-10-13 |
| CN102753727A (zh) | 2012-10-24 |
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