TWI492266B - Plasma processing device and plasma processing method - Google Patents

Description

Plasma processing device and plasma processing method

The present invention relates to a plasma processing apparatus and a plasma processing method.

A conventional plasma processing apparatus is provided with a support portion for processing a plasma generated, and a treatment portion placed on the support portion for sealing the processing container between the top plate and the top opening of the processing container. A sealing member such as a ring. In addition, in order to protect the O-ring from the deterioration caused by the plasma irradiation, a configuration in which the support portion of the processing container is brought into contact with the top plate without a gap therebetween is proposed (for example, Japanese Laid-Open Patent Publication No. H6-112168). In addition, it is proposed to provide a resin layer or a lining between the support portion and the top plate (see, for example, JP-A-2004-134583, JP-A-2009-253161, etc.).

In the above prior art, the support portion of the processing container is in direct contact with the top plate, or a resin layer or liner is present between the support portion of the processing container and the top plate. However, the support or top plate will thermally expand by the heat of the plasma generated in the processing vessel. Due to the difference in thermal expansion rate between the support portion and the top plate and the elastic deformation of the resin layer or the O-ring, the top plate and the support portion may be in contact with the friction or the top plate may be broken, which may cause the generation of particles.

The present invention is to provide a method in which even if a dielectric plate is thermally expanded due to plasma irradiation in a processing container, it does not come into contact with the supporting member, and the dielectric plate is prevented from being damaged or the dielectric plate is damaged to cause the occurrence of particles. Slurry treatment device and plasma treatment method.

A plasma processing apparatus according to the present invention includes: a processing container having a plasma processing space therein and an upper opening; a dielectric plate blocking an upper portion of the plasma processing space; and a cover member And an annular support portion disposed on an upper portion of the processing container and having an outer peripheral portion of the dielectric plate; and a sealing member disposed between the support portion and the dielectric plate for sealing the electricity a slurry processing space; and a spacer provided on an outer peripheral side of the sealing member to form a gap between the support portion and the dielectric plate.

In the plasma processing apparatus of the present invention, the spacer may be intermittently provided on the outer peripheral side of the sealing member.

Further, in the plasma processing apparatus of the present invention, the spacer may be formed of a fluorine resin or a polyimide resin.

Further, in the plasma processing apparatus of the present invention, the spacer may be a polyimide film having a polyimide film layer and an adhesive layer. In this case, it is preferable that the adhesive layer of the spacer is attached to the support portion and fixed.

Moreover, in the plasma processing apparatus of the present invention, the sealing member may include a first sealing member and a second sealing member provided on an inner peripheral side of the first sealing member.

Further, in the plasma processing apparatus of the present invention, the first sealing member is formed of a fluorine-based resin.

Further, in the plasma processing apparatus of the present invention, the second sealing member is formed of a fluorine-based resin having higher plasma resistance than the first sealing member.

Further, in the plasma processing apparatus of the present invention, the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, and the first portion is sealed by vacuum sealing. It is composed of two high-quality materials, and the second portion is preferably made of a material having higher plasma resistance than the first portion.

Further, in the plasma processing apparatus of the present invention, the gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate may be in the range of 0.05 to 0.4 mm, more preferably 0.05. In the range of ～0.2 mm, it is preferably in the range of 0.05 to 0.08 mm.

Moreover, in the plasma processing apparatus of the present invention, the distance between the spacer and the sealing member is in the range of 1 to 10 mm.

Moreover, in the plasma processing apparatus of the present invention, a gap in the range of 0.1 to 1 mm is formed between the wall surface of the inner periphery of the cover member and the outer peripheral side wall of the dielectric plate. In this case, the dielectric plate can be positioned in the horizontal direction by the spacer.

In the plasma processing method of the present invention, the object to be processed is processed by using a plasma processing apparatus, and the plasma processing apparatus is provided with a processing container having a plasma processing space therein and an upper opening; a dielectric plate And blocking the upper portion of the plasma processing space; the cover member is disposed at an upper portion of the processing container, and has an annular support portion for supporting an outer peripheral portion of the dielectric plate; and a sealing member a gap between the support portion and the dielectric plate for sealing the plasma processing space; and a spacer disposed on an outer peripheral side of the sealing member to form a gap between the support portion and the dielectric plate gap.

Further, a plasma processing apparatus according to another aspect of the present invention includes: a processing container having a plasma processing space therein and an upper opening; and a dielectric plate blocking an upper portion of the plasma processing space a cover member disposed on an upper portion of the processing container and having an annular support portion supporting an outer peripheral portion of the dielectric plate; and a sealing member disposed between the support portion and the dielectric plate And a spacer for being disposed on an outer peripheral side of the sealing member, forming a gap between the supporting portion and the dielectric plate; and an observation window for identifying the above processing The inside of the container.

Further, the observation window has a transparent window member including a protruding portion that is inserted into an observation opening formed in a side wall of the processing container, and a fixing member that fixes the window member from the outside, and a sealing member. It is hermetically sealed between the side wall of the processing container and the window member around the observation opening.

Further, the inner surface of the observation opening and the surface of the protruding portion are formed so as to be inserted into the observation opening by the pitch of the protruding portion, and the protruding portion is inserted into the observation opening. Thereby, the window member is attached to the side wall of the processing container.

In this case, it is preferable that the front end surface of the protruding portion is formed by bending the shape of the inner wall surface of the side wall of the processing container.

Moreover, it is preferable that the distance between the surface of the protruding portion and the inner surface of the observation opening is in the range of 0.1 mm to 2 mm.

According to the plasma processing apparatus and the plasma processing method of the present invention, a sealing member for sealing the plasma processing space is provided between the support portion of the processing container and the dielectric plate, and is provided on the outer peripheral side of the sealing member. A spacer is formed with a gap between the support portion and the dielectric plate. Therefore, even if the support portion or the dielectric plate thermally expands due to the plasma irradiation in the processing container, a gap can be formed between the support portion and the dielectric plate by the spacer, thereby preventing the support portion from rubbing against the dielectric plate. Moreover, it is possible to prevent the occurrence of particles due to breakage or friction of the dielectric plate.

[First Embodiment]

Hereinafter, embodiments of the plasma processing apparatus according to the present invention will be described in detail with reference to the drawings. First, the configuration of the plasma processing apparatus according to the first embodiment of the present invention will be described with reference to Figs. 1 to 3 . FIG. 1 is a cross-sectional view schematically showing a schematic configuration of a plasma processing apparatus 100. 2 is a plan view showing a planar antenna of the plasma processing apparatus 100 of FIG. 1, and FIG. 3 is a view showing a configuration of a control system of the plasma processing apparatus 100.

The plasma processing apparatus 100 is a planar antenna having a plurality of slit-like holes, for example, a RLSA (Radial Line Slot Antenna), which directly introduces microwaves into the processing container to cause plasma to be processed. Within the container, thereby forming a RLSA microwave plasma processing apparatus that produces a high density and low electron temperature microwave excited plasma. In the plasma processing apparatus 100, it is possible to treat a plasma having a plasma density of 1 × 10 ¹⁰ to 5 × 10 ¹² /cm ³ and a low electron temperature of 0.7 to 2 eV. Therefore, the plasma processing apparatus 100 can be suitably used for the purpose of forming a tantalum nitride film (SiN film) or a tantalum oxide film in a manufacturing process of various semiconductor devices, such as a nitriding treatment or an oxidation treatment. Further, the plasma processing apparatus 100 is also suitable for the purpose of forming a CVD film or a plasma etching ruthenium or ruthenium oxide film by plasma. Further, in the present embodiment, the plasma processing apparatus 100 will be described by taking an example of the purpose of performing plasma nitriding treatment on the object to be processed.

The main structure of the plasma processing apparatus 100 includes a processing container 1 that houses a semiconductor wafer (hereinafter referred to as "wafer") W as a substrate of the object to be processed, and a mounting table 2 that is housed in the processing container 1 a wafer W; a cover member 13 having a function of opening and closing the processing container 1 while supporting a dielectric plate; a gas introduction portion 15 connected to the gas supply device 18, introducing gas into the processing container 1; The gas device 24 is configured to decompress and decompress the inside of the processing container 1; the microwave introducing device 27 is disposed on the upper portion of the processing container 1, and introduces microwaves into the processing container 1 to generate plasma as plasma. And a control unit 50 that controls each component of the plasma processing apparatus 100.

The gas supply device 18 may be included in a configuration of the plasma processing apparatus 100 or a configuration in which the external gas supply device is connected to the gas introduction unit 15 without being used in the constituent portion.

The processing container 1 is formed by a substantially cylindrical container that is grounded. Further, the processing container 1 can also be formed by a rectangular tube-shaped container. The processing container 1 is an upper opening, and has a bottom wall 1a and a side wall 1b made of a material such as aluminum.

A mounting table 2 for horizontally placing the wafer W of the object to be processed is provided inside the processing container 1. The mounting table 2 is made of, for example, ceramics such as AlN or Al ₂ O ₃ . Among them, a material having high thermal conductivity such as AlN is particularly preferable. This mounting table 2 is supported by a cylindrical support member 3 that extends from the center of the bottom of the exhaust chamber 11 to the upper side. The support member 3 is made of, for example, a ceramic such as A1N.

Further, the mounting table 2 is provided with a cover member 4 for covering the outer edge portion or the entire surface thereof and guiding the wafer W. This cover member 4 is the upper surface, the side surface, or the entire surface of the cover mounting table 2. Also, the cover member 4 can be formed in a ring shape. In the cover member 4, the plasma is prevented from coming into contact with the mounting table 2, and the mounting table 2 is prevented from being sputtered, and impurities such as metal can be prevented from entering the wafer W. The cover member 4 is made of, for example, a material such as quartz, single crystal germanium, polycrystalline germanium, amorphous germanium, or tantalum nitride. Further, the material constituting the cover member 4 is preferably one having a high purity such as an alkali metal or a metal.

Further, a heater-heating type heater 5 is embedded in the mounting table 2. This heater 5 heats the mounting table 2 by supplying power from the heater power source 5a, and uniformly heats the wafer W of the object to be processed by the heat thereof.

Further, a thermocouple (TC) 6 is provided on the mounting table 2. The thermometer is used to measure the temperature of the wafer W, whereby the heating temperature of the wafer W can be controlled, for example, in the range of room temperature to 900 °C.

Further, the mounting table 2 is provided with a wafer supporting pin (not shown) for transferring the wafer W when the wafer W is carried into the processing container 1. Each of the wafer support pins is provided to protrude from the surface of the mounting table 2.

On the inner wall surface of the processing container 1, a cylindrical lining 7 made of quartz is provided to cover the inner wall surface. Further, on the outer peripheral side of the mounting table 2, in order to achieve uniform exhaust gas in the processing container 1, a quartz-shaped annular baffle 8 having a plurality of exhaust holes 8a is provided. This baffle 8 is supported by a plurality of struts 9.

A circular opening 10 is formed in a substantially central portion of the bottom wall 1a of the processing container 1. The bottom wall 1a is provided with an exhaust chamber 11 that communicates with the opening 10 and protrudes downward. The exhaust chamber 11 is connected to the exhaust pipe 12, which is connected to the exhaust device 24. In this way, the inside of the processing container 1 can be evacuated by vacuum.

The upper portion of the processing container 1 is an opening, and a lid member 13 having an opening and closing function is disposed at the upper end of the processing container 1 of the opening. The cover member 13 has a frame shape in which a central opening is formed, and its inner circumference is annularly provided with a step (a step of two stages in Fig. 1). The cover member 13 is protruded toward the inner side (the inner space of the processing container) by the step, and forms an annular (annular) support portion 13a. The cover member 13 and the processing container 1 are hermetically sealed via the sealing member 14.

The side wall 1b of the processing container 1 is provided with a carry-out port 16 for carrying in and out of the wafer W between the plasma processing apparatus 100 and an adjacent transfer chamber (not shown), and a gate valve 17 for opening and closing the carry-out port 16.

Further, a gas introduction portion 15 that forms an annular shape is provided in the side wall 1b of the processing container 1. A gas discharge hole is formed uniformly on the inner circumferential surface of the gas introduction portion 15. This gas introduction portion 15 is connected to a gas supply device 18 that supplies a plasma excitation gas or a nitrogen gas. Further, the gas introduction portion 15 may be provided in a nozzle shape or a shower shape.

The gas supply device 18 includes a gas supply source, piping (for example, gas routes 20a, 20b, and 20c), flow rate control devices (for example, mass flow controllers 21a and 21b), and valves (for example, opening and closing valves 22a and 22b). As a configuration example in the case of performing the nitridation process, the gas supply source includes, for example, a rare gas supply source 19a and a nitrogen gas supply source 19b. The gas supply device 18 may have, for example, a purge gas supply source used in the environment in which the processing container 1 is replaced, and may be a gas supply source (not shown). Further, when the plasma processing apparatus 100 is used for plasma oxidation treatment, an oxygen gas supply source can be provided.

As the rare gas supplied from the rare gas supply source 19a, for example, Ar gas, Kr gas, Xe gas, He gas or the like can be used. Among these, it is particularly preferable to use Ar gas based on the point of economical efficiency. An Ar gas is representatively illustrated in Fig. 1 . The nitrogen gas supply source 19b may be substituted for the nitrogen gas (N ₂ ), for example, ammonia gas (NH ₃ ) or the like. Further, when the plasma processing apparatus 100 is used for plasma oxidation treatment, for example, O ₂ gas, O ₃ gas, NO ₂ or the like may be supplied from an oxygen gas supply source.

The rare gas and the nitrogen gas are supplied from the rare gas supply source 19a of the gas supply device 18 and the nitrogen gas supply source 19b via the gas paths (pipes) 20a and 20b, respectively, and merged in the gas path 20c, and are connected to the gas route 20c. The gas introduction unit 15 is introduced into the processing container 1 . Each of the gas paths 20a, 20b connected to each gas supply source is provided with a mass flow controller 21a, 21b and a set of on-off valves 22a, 22b provided in front and rear. The switching of the supplied gas, the flow rate, and the like can be controlled by the configuration of the gas supply device 18 as described above.

The exhaust device 24 is, for example, a high-speed vacuum pump including a turbo molecular pump or the like. As described above, the exhaust device 24 is connected to the exhaust chamber 11 of the processing container 1 via the exhaust pipe 12. The gas in the processing container 1 uniformly flows into the space 11a of the exhaust chamber 11, and the exhaust device 24 is operated to exhaust the air from the space 11a via the exhaust pipe 12. Thereby, the inside of the processing container 1 can be decompressed at a high speed to a predetermined degree of vacuum, for example, 0.133 Pa.

Next, the configuration of the microwave introducing device 27 will be described. The main structure of the microwave introducing device 27 includes a dielectric plate 28 as a microwave transmitting plate, a planar antenna 31, a retarding material 33, a metal cover member 34, a waveguide 37, a matching circuit 38, and a microwave generating device 39. The microwave introducing device 27 is a plasma generating means that introduces plasma (microwave) into the processing container 1 to generate plasma.

The dielectric plate 28 having a function of transmitting microwaves is provided on the support portion 13a which protrudes to the inner peripheral side of the cover member 13. The dielectric material plate 28 is made of, for example, a material such as quartz or ceramic. The dielectric plate 28 and the support portion 13a of the cover member 13 are hermetically sealed between the O-rings 29a which are sealed members as will be described later. Therefore, the inside of the processing container 1 is airtightly held. In the first embodiment, an annular O-ring 29a is provided between the dielectric plate 28 and the support portion 13a of the cover member 13, and a spacer 60 (to be described later) is provided (not shown in Fig. 1; 4).

The planar antenna 31 is on the dielectric plate 28 (outside of the processing container 1) and is disposed to face the mounting table 2. The planar antenna 31 has a disk shape. Further, the shape of the planar antenna 31 is not limited to a disk shape, and may be, for example, a square plate shape. This planar antenna 31 is locked to the upper end of the cover member 13.

The planar antenna 31 is made of, for example, a conductive member such as a copper plate whose surface is plated with gold or silver, an aluminum plate, a nickel plate, or the like. The planar antenna 31 is a plurality of slit-shaped microwave radiation holes 32 that radiate microwaves. The microwave radiation holes 32 are formed by penetrating the planar antenna 31 in a predetermined pattern.

Each of the microwave radiation holes 32 is formed into an elongated rectangular shape (slit shape) as shown in FIG. 2, for example. Moreover, the typical adjacent microwave radiation holes 32 are arranged in an "L" shape. Further, the entire microwave radiation holes 32 arranged in a predetermined shape (for example, an L shape) are arranged in a concentric shape. The length or arrangement interval of the microwave radiation holes 32 is determined in accordance with the wavelength (λg) of the microwave. For example, the interval of the microwave radiation holes 32 is arranged to be λg/4 to λg. In Fig. 2, the interval between the adjacent microwave radiation holes 32 forming concentric circles is indicated by Δr. Further, the shape of the microwave radiation holes 32 may be other shapes such as a circular shape or an arc shape. Further, the arrangement of the microwave radiation holes 32 is not particularly limited, and may be arranged in a spiral shape or a radial shape, for example, in addition to concentric shapes.

A buffer material 33 having a dielectric constant larger than a vacuum is provided on the upper surface of the planar antenna 31 (a flat waveguide formed between the planar antenna 31 and the metal cover member 34). Since the retardation material 33 has a long wavelength of microwaves in a vacuum, it has a function of shortening the wavelength of the microwaves and adjusting the plasma. The material of the slow-wave material 33 is, for example, quartz, a polytetrafluoroethylene resin, a polyimide resin, or the like. Further, between the planar antenna 31 and the dielectric plate 28, and between the slow-wave material 33 and the planar antenna 31, contact or separation may be performed, but it is preferable to make contact.

A metal cover member 34 is provided on the upper portion of the processing container 1, so that the planar antenna 31 and the slow-wave material 33 can be covered. The metal cover member 34 is made of, for example, a metal material such as aluminum or stainless steel. By forming the flat waveguide by the metal cover member 34 and the planar antenna 31, microwaves can be uniformly supplied into the processing container 1. The upper end of the cover member 13 and the metal cover member 34 are sealed by a sealing member 35. Further, a cooling water flow path 34a is formed inside the wall of the metal cover member 34. The metal cover member 34, the retardation material 33, the planar antenna 31, and the dielectric plate 28 can be cooled by passing cooling water through the cooling water flow path 34a. Further, the planar antenna 31 and the metal cover member 34 are grounded.

An opening 36 is formed in the center of the upper wall (top) of the metal cover member 34, and the waveguide 36 is connected to the opening 36. On the other end side of the waveguide 37, a microwave generating device 39 that generates microwaves is connected via a matching circuit 38.

The waveguide 37 has a coaxial coaxial waveguide 37a having a circular cross section extending upward from the opening 36 of the metal cover member 34, and an upper end portion of the coaxial waveguide 37a is connected via a mode converter 40. The rectangular waveguide 37b extends in the horizontal direction. The mode converter 40 has a function of converting microwaves propagating in the rectangular waveguide 37b in the TE mode into the TEM mode.

In the center of the coaxial waveguide 37a, an inner conductor 41 extends. The inner conductor 41 is connected and fixed to the center of the planar antenna 31 at its lower end portion. With such a configuration, the microwaves are propagated uniformly through the inner conductor 41 of the coaxial waveguide 37a to the flat waveguide formed by the planar antenna 31.

In the microwave introducing device 27 configured as described above, the microwave generated in the microwave generating device 39 propagates through the waveguide 37 to the planar antenna 31, and is further introduced into the processing from the microwave radiating hole 32 (slit) via the dielectric plate 28. Inside the container 1. Further, the frequency of the microwave is preferably 2.45 GHz, for example, and 8.35 GHz, 1.98 GHz, or the like may be used.

Each component of the plasma processing apparatus 100 is configured to be connected to the control unit 50 for control.

The control unit 50 is typically a part computer. For example, as shown in FIG. 3, the control unit 50 includes a process controller 51 including a CPU, and a user interface 52 and a memory unit 53 connected to the process controller 51. The process controller 51 is configured to collectively control, for example, various components related to processing conditions such as temperature, pressure, gas flow rate, and microwave output in the plasma processing apparatus 100 (for example, the heater power source 5a, the gas supply device 18, and the exhaust device 24). Control means of the microwave generating device 39, etc.).

The user interface 52 includes a keyboard for inputting an instruction or the like for the management of the plasma processing apparatus 100, and a display for visually displaying the operation state of the plasma processing apparatus 100. Further, the storage unit 53 stores a prescription for recording a control program (software) or processing condition data, and the control program (software) is implemented to be executed by the plasma processing apparatus 100 under the control of the process controller 51. Various processors.

Then, in response to an instruction from the user interface 52, an arbitrary prescription is called from the memory unit 53 to be executed by the process controller 51 under the control of the process controller 51 in the plasma processing apparatus 100. The desired processing is performed in the processing container 1. Further, the prescriptions of the control program, the processing condition data, and the like can be stored in a state of a computer-readable memory medium such as a CD-ROM, a hard disk, a floppy disk, a flash memory, a DVD, a Blu-ray disk, or the like. Further, the above prescriptions may be transferred and used from other devices, for example, via a dedicated line.

The plasma processing apparatus 100 configured as described above can perform plasma-free plasma treatment on the wafer W at a low temperature of, for example, room temperature (about 25 ° C) or higher and 600 ° C or lower. Further, since the plasma processing apparatus 100 has excellent uniformity of plasma, uniformity of the process can be achieved even with a large-diameter wafer W.

Next, a general procedure for plasma nitriding treatment of the plasma processing apparatus 100 using the RLSA method will be described. First, the gate valve 17 is opened, and the wafer W is carried into the processing container 1 from the carry-out port 16, and is placed on the mounting table 2. Then, the rare gas and the nitrogen gas supply source 19a and the nitrogen gas supply source 19b are introduced from the rare gas supply source 19a and the nitrogen gas supply source 19b of the gas supply device 18 at a predetermined flow rate through the gas introduction unit 15 at a predetermined flow rate. To the inside of the processing container 1. Thus, the inside of the processing container 1 is adjusted to a predetermined pressure.

Next, microwaves of a predetermined frequency, for example, 2.45 GHz, which occur at the microwave generating device 39, are guided to the waveguide 37 via the matching circuit 38. The microwave guided to the waveguide 37 is sequentially supplied to the planar antenna 31 via the inner conductor 41 through the rectangular waveguide 37b and the coaxial waveguide 37a. That is, the microwave propagates in the TE mode in the rectangular waveguide 37b, and the TE mode microwave is converted into the TEM mode by the mode converter 40, and propagates toward the planar antenna 31 in the coaxial waveguide 37a. Then, the microwaves are radiated from the microwave radiation holes 32 formed in the slit shape formed in the planar antenna 31 to the upper space of the wafer W in the processing container 1 via the dielectric plate 28.

The microwaves radiated into the processing chamber 1 from the planar antenna 31 via the dielectric plate 28 form an electromagnetic field in the processing container 1 to plasma-treat the processing gas such as a rare gas or a nitrogen gas. The microwave-excited plasma thus generated is radiated from a plurality of microwave radiation holes 32 of the planar antenna 31 by microwaves, and has a high density of approximately 1 × 10 ¹⁰ to 5 × 10 ¹² /cm ³ , and is formed in the vicinity of the wafer W. A low electron temperature plasma of approximately 1.2 eV or less.

The conditions of the plasma nitriding treatment performed by the plasma processing apparatus 100 can be stored in the memory unit 53 of the control unit 50 as a prescription. Then, the process controller 51 reads out the prescription and sends a control signal to each component of the plasma processing apparatus 100, for example, the gas supply device 18, the exhaust device 24, the microwave generating device 39, the heater power source 5a, and the like. Plasma nitriding treatment of the desired conditions.

Next, the configuration of the characteristic portion of the plasma processing apparatus 100 of the present embodiment will be described with reference to the drawings. Fig. 4 is a partial cross-sectional view showing an enlarged portion A of Fig. 1 surrounded by a broken line. Part A is a connecting portion indicating the dielectric plate 28 and the support portion 13a of the cover member 13. Moreover, FIG. 5 is a partially enlarged view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric plate 28 is removed from the portion A surrounded by a broken line in FIG.

In the present embodiment, an annular O-ring 29a is provided between the dielectric plate 28 and the support portion 13a of the cover member 13 as a sealing member for sealing the plasma processing space in the processing container 1 to maintain a vacuum state. Further, on the outer peripheral side of the O-ring 29a, a gap d in the vertical direction is formed between the upper surface of the support portion 13a of the cover member 13 on the upper portion of the processing container 1 and the dielectric plate 28, and the cross-sectional shape is square or rectangular. Annular spacer 60. On the upper surface of the support portion 13a of the cover member 13, the O-ring 29a and the spacer 60 are respectively located at predetermined mounting positions. Mounting grooves 131 and 132 having an arc shape and having a predetermined depth are formed on the support portion 13a of the cover member 13 so that the installation positions are not shifted. In the mounting structures 131, 132, the O-ring 29a and the spacer 60 are press-fitted and mounted. Since the mounting grooves 131 and 132 are grooves (ant grooves) having a narrow upper portion and a wide lower portion, the O-ring 29a and the spacer 60 are less likely to fall off, and the mounting position is not displaced.

The spacer 60 has a function of forming a gap d between the upper surface of the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric plate 28. The gap d formed by the spacer 60 between the upper surface of the support portion 13a of the cover member 13 and the lower surface of the dielectric plate 28 is preferably 0.05 to 0.4 mm, for example. The gap d is more preferably 0.05 to 0.2 mm, more preferably 0.05 to 0.08 mm. By setting the gap d within the above range, when the high vacuum state is formed in the processing container 1, even if the vicinity of the center of the dielectric plate 28 is bent downward, the dielectric plate 28 can be prevented from contacting the support portion 13a. Corner 13b. Therefore, it is possible to prevent the contact between the corner portion 13b of the support portion 13a and the dielectric plate 28 from causing damage or damage or friction of the dielectric plate 28 to generate fine particles.

The spacer 60 preferably has a small coefficient of friction, and the sliding of the contact surface of the dielectric plate 28 with the cover member 13 or the dielectric plate 28 by thermal expansion of the plasma is improved. Further, in the plasma processing apparatus 100, since the microwave is used, the spacer 60 is made of a material having a small dielectric loss tangent (tan δ), or a material having a small tan δ is applied to the surface of the elastic member. Further, the spacer 60 is preferably a material having a modulus of elasticity (Young Modulus) larger than the O-ring 29a. For example, it is preferable that the Young's modulus of the spacer 60 is in the range of 200 to 500 kgf/mm ² . The tan δ of the constituent material of the spacer 60 is preferably in the range of, for example, 0.00001 to 0.0034. The tan δ is a material within the above range, and examples thereof include a fluorine-based resin such as a polyimide-based resin or a polytetrafluoroethylene. Here, when a polyimine-based resin is used, the Young's modulus is preferably in the range of, for example, 320 to 350 kgf/mm ² . Further, when the support portion 13a of the cover member 13 is made of aluminum or the like, the coefficient of thermal expansion is about 23 × 10 ^-6 . On the other hand, when the dielectric plate 28 is formed of a quartz material, the coefficient of thermal expansion is about 0.6 × 10 ^{- 6} . Therefore, the support portion 13a of the cover member 13 has a larger coefficient of thermal expansion than the dielectric plate 28. Because of the difference in thermal expansion coefficient between the cover member 13 and the dielectric plate 28, the occurrence of particles or the breakage of the dielectric plate 28 caused by friction or contact between the cover member 13 and the dielectric plate 28 may become a problem, but In the plasma processing apparatus 100 of the present embodiment, the gap d is preferably formed in the range of 0.05 to 0.4 mm by the spacer 60, more preferably 0.05 to 0.2 mm, and more preferably 0.05 to 0.08 mm. Within this range, this problem can be prevented.

In order to seal the plasma processing space in the processing container 1 between the dielectric plate 28 and the support portion 13a of the lid member 13, the O-ring 29a is preferably formed of a fluorine-based resin material having high vacuum sealing property, or The fluorine-based resin material is applied to the surface of the elastic material. For example, from the viewpoint of ensuring sufficient sealing property between the dielectric sheet 28 and the support portion 13a of the lid member 13, the O-ring 29a is preferably made of a material having a Shore A hardness of 60 to 80. .

Further, it is preferable that the thermal expansion of the dielectric plate 28 is in the range of 0.1 to 1 mm in the horizontal direction between the wall surface 13c of the inner periphery of the cover member 13 and the wall surface 28a of the outer peripheral end of the dielectric plate 28, for example, in the range of 0.1 to 1 mm. . Thereby, contact between the dielectric board 28 and the cover member 13 can be prevented, and damage of the dielectric board can be prevented. Further, since the thermal expansion coefficient of the cover member 13 is higher than that of the dielectric plate 28, the gap L1 in the horizontal direction can be almost zero (that is, in a state of abutment), but it is preferable to ensure that the electric plate 28 does not reluctantly close the cover. The degree of separation of the support portion 13a of the member 13.

Further, from the viewpoint of securing the strength of the support portion 13a, the interval L2 between the inner peripheral end of the spacer 60 and the outer peripheral end of the O-ring 29a is preferably in the range of, for example, 1 to 10 mm. In addition, in FIG. 4, the spacer 60 may be provided on the inner peripheral side (the O-ring 29a side) of the wall surface 28a of the outer peripheral end of the dielectric board 28.

As described above, the plasma processing apparatus 100 is provided with an O-ring 29a for sealing the plasma processing space in the processing container 1 between the dielectric plate 28 and the support portion 13a of the cover member 13, and more in the O-type. A spacer 60 is provided on the outer peripheral side of the ring 29a. It is preferable that the gap d is formed in the range of 0.05 to 0.4 mm between the lid member 13 and the dielectric plate 28 by the spacer 60, and more preferably in the range of 0.05 to 0.2 mm, more preferably 0.05 to 0.08. Within the range of mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the heat of the plasma generated in the processing container 1, or the dielectric plate 28 is bent downward due to the vacuum, the cover member 13 can be prevented. Contact and friction with the dielectric plate 28. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbed to generate fine particles.

[Second Embodiment]

Next, a plasma processing apparatus according to a second embodiment of the present invention will be described with reference to Figs. 6 and 7 . The difference between the plasma processing apparatus of the second embodiment and the plasma processing apparatus of the first embodiment is a sealing structure between only the dielectric sheet 28 and the support portion 13a of the lid member 13. Therefore, the description of the same components as those of the plasma processing apparatus according to the first embodiment will be omitted, and only the sealing structure of the plasma processing apparatus according to the second embodiment will be described.

FIG. 6 is a partial cross-sectional view showing the connection portion of the dielectric plate 28 of the plasma processing apparatus of the second embodiment and the support portion 13a of the lid member 13 (that is, a portion corresponding to the portion A in FIG. 1). In addition, FIG. 7 is a partially enlarged view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric plate 28 of the plasma processing apparatus of the second embodiment is removed.

In the second embodiment, as in the first embodiment, an annular O-ring 29a is provided between the dielectric plate 28 and the support portion 13a of the cover member 13 as a sealing treatment. The first sealing member of the plasma processing space in the container 1. Further, on the outer peripheral side of the O-ring 29a, a spacer 60 is provided in order to form a gap d between the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric plate 28. The spacer 60 is made of a material having a larger elastic modulus than the annular O-ring 29a. Further, in the present embodiment, as shown in Fig. 6 and Fig. 7, an O-ring 29b as a second sealing member is provided on the inner peripheral side of the annular O-ring 29a. In other words, on the upper surface of the support portion 13a of the cover member 13, a mounting groove 133 for mounting the O-ring 29b is formed on the inner peripheral side of the mounting groove 131 of the O-ring 29a, and an O-ring is pushed in the mounting groove 133. 29b and installed. The mounting groove 133 is a groove (ant groove) having a narrow upper portion and a wide lower portion, so that the O-ring 29b is less likely to fall off.

Further, the distance L3 between the inner peripheral end of the O-ring 29a and the outer peripheral end of the O-ring 29b is preferably in the range of 1.5 to 50 mm from the viewpoint of securing the strength of the support portion 13a.

Here, the O-ring 29b is located on the inner peripheral side of the O-ring 29a, and is easily irradiated with plasma. Therefore, it is preferable that the O-ring 29b is made of a material such as a fluorine-based resin material having a higher plasma resistance than the O-ring 29a, or a fluorine-based resin material having a higher plasma resistance than the O-ring 29a. The material is coated with an elastic member. Further, since the vacuum sealing is performed by the O-ring 29a, the O-ring 29b can also be a material having a lower vacuum sealing property than the O-ring 29a. Here, the specific combination of the materials of the O-ring 29a and the O-ring 29b is, for example, Viton manufactured by Du Pont Co., Ltd. which is excellent in vacuum sealing property. A fluororubber or the like (registered trademark) is used to form the O-ring 29a, and Kalrez manufactured by Du Pont Co., Ltd., which is higher in plasma resistance than the O-ring 29a. It is preferable to form the O-ring 29b by a (registered trademark) or a fluorene-based resin or the like.

In the present embodiment, the O-ring 29a having a high vacuum sealing property is provided as the first sealing member, and the O-ring 29b having high plasma resistance is provided as the O-ring structure of the inside and the outside of the second sealing member. The ring 29b prevents the O-ring 29a from deteriorating due to plasma. Therefore, the vacuum sealing property in the processing container 1 using the O-ring 29a can be maintained for a long period of time. Moreover, since the maintenance period such as replacement of the O-ring 29a of the consumables can be extended, the operation period of the apparatus becomes long, and the productivity can be improved.

As described above, the plasma processing apparatus according to the second embodiment is formed in the gap d between the lid member 13 and the dielectric sheet 28 by the spacer 60 in the same manner as the plasma processing apparatus 100 of the first embodiment. It is preferably in the range of 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the heat of the plasma generated in the processing container 1, or the dielectric plate 28 is bent downward due to the vacuum, the cover member 13 can be prevented. Contact and friction with the dielectric plate 28. Therefore, it is possible to prevent the dielectric plate 28 from being broken or the friction with the cover member 13 from causing the occurrence of particles.

Further, in the plasma processing apparatus of the present embodiment, the O-ring 29a having high vacuum sealing property as the first sealing member and the O-ring 29b having high plasma resistance as the second sealing member are double O. The ring structure prevents deterioration of the O-ring 29a caused by plasma irradiation, and maintains the vacuum sealed state in the processing container 1 for a long period of time. In the present embodiment, the gap d is formed between the cover member 13 and the dielectric plate 28 by the spacer 60, so that the plasma easily enters the gap d. Therefore, the plasma invading into the gap d can be blocked by the O-ring 29b having high plasma resistance.

In the plasma processing apparatus of the present embodiment, the spacer 60, the O-ring 29a as the first sealing member, and the O-ring 29b as the second sealing member are provided in this order from the outside to the inside (vacuum side). According to this configuration, it is possible to prevent deterioration of the O-ring 29a while preventing contact between the dielectric sheet 28 and the lid member 13 due to contact with the lid member 13, and to secure vacuum sealing properties for a long period of time.

Other configurations and effects of the present embodiment are the same as those of the first embodiment.

[Third embodiment]

Next, a plasma processing apparatus according to a third embodiment will be described. Unlike the plasma processing apparatus according to the first and second embodiments, only the spacer between the dielectric board 28 and the support portion 13a of the cover member 13 has a structure, and therefore, the same components as those of the first and second embodiments are provided. The description is omitted, and only the configuration of the spacer in the plasma processing apparatus according to the third embodiment will be described.

FIG. 8 is a partially enlarged plan view showing the upper surface of the support portion 13a of the lid member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the third embodiment is removed. As shown in Fig. 8, in the third embodiment, as in the first embodiment, a first portion for sealing the plasma processing space in the processing container 1 between the dielectric plate 28 and the support portion 13a of the lid member 13 is provided. An annular O-ring 29a of the sealing member. Further, on the outer peripheral side of the O-ring 29a, a gap d is formed between the support portion 13a of the cover member 13 disposed on the upper portion of the processing container 1 and the dielectric plate 28, and a plurality of them are intermittently provided. Spacers 60A, 60A, ‧‧. Therefore, in the upper surface of the support portion 13a of the cover member 13 of the present embodiment, the attachment grooves 132A, 132A, ‧ ‧ are intermittently formed, and the plurality of spacers 60A, 60A, ‧ ‧ can be intermittently arranged ‧

In the same manner as the plasma processing apparatus according to the first and second embodiments, the spacer 60A forms a gap d between the support portion 13a of the cover member 13 and the dielectric plate 28 (in the plasma processing apparatus according to the first embodiment and the second embodiment). Figure 8 is not shown). The gap d is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles.

In particular, in the plasma processing apparatus of the present embodiment, a plurality of spacers 60A, 60A, ‧ ‧ are intermittently provided on the outer peripheral side of the O-ring 29a. Therefore, the contact area between the plurality of spacers 60A, 60A, ‧‧ and the dielectric plate 28 becomes small, and the occurrence of particles by the friction between the spacer 60A and the dielectric plate 28 can be reduced.

Further, in the third embodiment, as shown in FIG. 9, when the O-ring 29a and the O-ring 29b are provided, a plurality of spacers 60A, 60A may be intermittently provided on the outer peripheral side of the O-ring 29a. ‧‧‧.

In the present embodiment, it is preferable that the spacers 60A are disposed at, for example, two or more places (two or more divisions). Thereby, the surface of the step portion of the support portion 13a is not inclined, and the spacer 60A can be provided flat. Further, since the gap between the dielectric plate 28 and the support portion 13a can be formed with high precision, the dielectric plate 28 does not contact and rub against the support portion 13a, and damage of the dielectric plate 28 or generation of fine particles can be prevented.

Other configurations and effects of the present embodiment are the same as those of the first and second embodiments.

[4th Jia Shi Form]

Next, a plasma processing apparatus according to a fourth embodiment will be described. Unlike the plasma processing apparatus of the first to third embodiments, the separator is only a structure between the dielectric sheet 28 and the support portion 13a of the lid member 13, and therefore, the same components as those of the first to third embodiments are used. The description is omitted, and only the configuration of the spacer in the plasma processing apparatus according to the fourth embodiment will be described.

In the plasma processing apparatus of the first to third embodiments, a gap L1 in the horizontal direction is provided between the wall surface 13c on the inner circumference of the lid member 13 and the wall surface 28a on the outer peripheral end of the dielectric sheet 28. This gap L1 is a gap in consideration of thermal expansion of the dielectric plate 28. In the plasma processing apparatus of the present embodiment, the spacer 60 made of a material having a larger modulus of elasticity than the O-rings 29a and 29b has a positioning function in the horizontal direction of the dielectric board 28.

FIG. 10 is a partial cross-sectional view showing the connection portion (that is, the portion corresponding to the portion A of FIG. 1) of the dielectric sheet 28 of the plasma processing apparatus of the fourth embodiment and the support portion 13a of the lid member 13 in an enlarged manner.

In addition, FIG. 11 is a partially enlarged plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the fourth embodiment is removed. As shown in FIG. 10 and FIG. 11, the spacer 60B of the plasma processing apparatus of the fourth embodiment has an L-shaped cross-sectional shape in order to position the dielectric board 28 in the horizontal direction. That is, the spacer 60B protrudes from the upper portion on the outer peripheral side to form the protruding portion 60a.

In the plasma processing apparatus of the fourth embodiment, the dielectric board 28 can be positioned in the horizontal direction by the protruding portion 60a of the spacer 60B. In other words, the dielectric plate 28 can be surely disposed at a predetermined horizontal position, and the horizontal direction can be surely ensured between the wall surface 13c of the inner periphery of the cover member 13 and the wall surface 28a of the outer peripheral end of the dielectric plate 28. The gap L1. Further, the height of the protruding portion 60a of the spacer 60B can be arbitrarily set in accordance with the thickness of the dielectric board 28.

According to the plasma processing apparatus of the present embodiment, the spacer 60B is formed between the support portion 13a of the cover member 13 and the dielectric plate 28, similarly to the plasma processing apparatus according to the first to third embodiments. The gap d is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles.

In particular, in the plasma processing apparatus of the present embodiment, in order to position the dielectric plate 28 in the horizontal direction, a protruding portion 60a in which the cross-sectional shape of the spacer 60B is formed in an L shape and the upper portion on the outer peripheral side is protruded is provided. Therefore, the dielectric board 28 can be surely disposed at a predetermined horizontal position. Further, the protruding portion 60a can securely ensure the horizontal gap L1 between the wall surface 13c of the inner periphery of the cover member 13 and the wall surface 28a of the outer peripheral end of the dielectric plate 28.

Further, for example, as shown in FIG. 12, in order to facilitate positioning in the horizontal direction, the dielectric plate 28A having the notch portion 28b formed at the lower peripheral end may be used. That is, by bringing the spacer 60 into contact with the notch portion 28b of the dielectric board 28A, the dielectric board 28A can be surely positioned at a predetermined horizontal position. Further, a gap L1 in the horizontal direction can be surely ensured between the wall surface 13c on the inner circumference of the cover member 13 and the wall surface 28a on the outer peripheral end of the dielectric plate 28A. In this case, the spacer 60 itself is the same as the spacer 60 of the first embodiment shown in FIG. 4 and the like, and the spacer 60 may be used as long as the cross-sectional square or rectangular spacer 60 is used.

Further, the shape of the spacer 60B shown in FIGS. 10 and 11 and the dielectric plate 28A shown in FIG. 12 may be employed, and as shown in FIGS. 7 and 9, an O with high vacuum sealing property may be used. The double O-ring structure of the ring 29a and the O-ring 29b having high plasma resistance. Further, although not shown in the drawings, the spacer 60A may be replaced in the configuration shown in Figs. 8 and 9 of the third embodiment, and a plurality of spacers 60B may be intermittently provided. For example, it is preferable to arrange the spacer 60B at two or more positions (two or more divisions). Thereby, the spacer 60B can be provided without the skew on the surface of the step part of the support part 13a. Then, the gap between the dielectric plate 28 and the support portion 13a can be formed with high precision, so that the dielectric plate 28 does not contact and rub against the support portion 13a, and damage of the dielectric plate 28 or generation of particles can be prevented.

Other configurations and effects of the present embodiment are the same as those of the first to third embodiments.

[Fifth Embodiment]

Next, a plasma processing apparatus according to a fifth embodiment will be described. The difference from the plasma processing apparatus of the first to fourth embodiments is the structure of the spacer between the dielectric sheet 28 and the support portion 13a of the lid member 13, and therefore the same components as those of the first to fourth embodiments. The description is omitted, and only the structure of the spacer of the plasma processing apparatus according to the fifth embodiment will be described.

In the plasma processing apparatus of the first to fourth embodiments, a material having a larger modulus of elasticity than the O-rings 29a and 29b is provided between the wall surface 13c on the inner circumference of the lid member 13 and the wall surface 28a on the outer peripheral end of the dielectric sheet 28. The spacer 60, 60A or 60B is constructed. In this embodiment, a polyimide film having a polyimide resin and an adhesive layer is used as a spacer.

FIG. 13 is a partial cross-sectional view showing, in detail, a portion where the dielectric plate 28 of the plasma processing apparatus according to the fifth embodiment is connected to the support portion 13a of the lid member 13 (that is, a portion corresponding to the portion A in FIG. 1). In addition, FIG. 14 is a partially enlarged plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the fifth embodiment is removed. As shown in FIG. 13 and FIG. 14, in the plasma processing apparatus of the fifth embodiment, the spacer 60C is formed of a plurality of arc-shaped polyimine tapes which are ring-shaped or combined in a ring shape.

The cross-sectional structure of the polyimide tape 70 which can be utilized as the spacer 60C is enlarged in FIG. The polyimide tape 70 is an adhesive layer 70B provided with a polyimide film layer 70A and one surface of the polyimide film layer 70A. Here, the polyimide film layer 70A is, for example, a glass transition temperature (Tg) in the range of 120 ° C to 250 ° C and a thermal expansion coefficient of 3 × 10 ^-5 / ° C to 5 × 10 ^-5 / ° C A heat-resistant polyimide resin having a Young's modulus in the range of 320 to 350 kgf/mm ² is preferred. Further, the material of the adhesive layer 70B is not particularly limited as long as it has adhesion to a metal surface, and for example, a heat-resistant adhesive can be used. The thickness of the polyimide tape 70 (that is, the total thickness of the polyimide film layer 70A and the adhesive layer 70B) may be such that the gap d can be formed in the range of 0.05 to 0.4 mm as described above. Therefore, the thickness of the polyimide tape 70 is, for example, an extremely thin thickness in the range of 35 μm or more and 400 μm or less. The polyimine tape 70 thus constructed can be used as a commercially available product, for example, Kapton Co., Ltd. Tape (Kapton Registered trademarks, etc.

In the plasma processing apparatus of the present embodiment, by using the polyimide tape 70 having the adhesive layer 70B as the spacer 60C, the displacement of the spacer 60C is less likely to occur. Therefore, the mounting groove 132 may not be provided in the support portion 13a of the cover member 13 to attach the spacer 60C. Therefore, the work required for the processing of the installation groove can be reduced, and the probability of occurrence of particulate or metal contamination due to the installation groove can be reduced. Further, in the present embodiment, the mounting groove 132 similar to that of the first to fourth embodiments may be provided as needed, and the spacer 60C may be provided here.

Further, the spacer 60C may be attached to the lower surface of the dielectric plate 28 and the upper surface of the support portion 13a of the cover member 13. The spacer 60C is preferably attached by abutting the adhesive layer 70B against the upper surface of the support portion 13a based on the suppression of the wound or abrasion of the surface of the polyimide film layer 70A constituting the spacer 60C.

According to the plasma processing apparatus of the first embodiment, the spacer 60C is formed between the support portion 13a of the cover member 13 and the dielectric plate 28, similarly to the plasma processing apparatus according to the first to fourth embodiments. The gap d is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles.

In particular, the plasma processing apparatus of the present embodiment uses the polyimide tape 70 having the adhesive layer 70B as the spacer 60C, and is less likely to be displaced. Even if the mounting groove 132 is not provided, it can be attached to a predetermined position and positioned. Therefore, there is no need to install a groove for processing.

Further, in the present embodiment, as in the second embodiment, a double O-ring structure can be employed. That is, as shown in Fig. 16 and Fig. 17, the polyimide tape 70 as the spacer 60C, the O-ring 29a having high vacuum sealing property, and the plasma resistance can be sequentially provided from the outside to the inside (vacuum side). High O-ring 29b. With such a configuration, it is possible to prevent the deterioration of the O-ring 29a while preventing the contact of the lid member 13 of the dielectric sheet 28 from being damaged or the occurrence of fine particles, and to secure the vacuum sealing property for a long period of time. Further, although not shown in the drawings, similarly to the configuration shown in FIGS. 8 and 9 of the third embodiment, a plurality of polyimide tapes 70 as spacers 60C may be intermittently provided. It is preferable that the polyimide tape 70 is attached to two or more places (two or more divisions), and for example, it can be attached to three places (three divisions). Thereby, the polyimide tape 70 can be attached flatly on the surface of the support part 13a without wrinkles. Moreover, the gap d between the dielectric board 28 and the support portion 13a can be formed with high precision, so that there is no contact or friction between the dielectric board 28 and the support portion 13a, and damage or particulate of the dielectric board 28 can be prevented. occur.

Other configurations and effects of the present embodiment are the same as those of the first to third embodiments.

[Sixth embodiment]

Next, a plasma processing apparatus according to a sixth embodiment will be described. The difference from the plasma processing apparatus according to the fifth embodiment is the structure of the sealing member between the dielectric sheet 28 and the support portion 13a of the lid member 13. Therefore, the description of the same components as those of the first to fifth embodiments is omitted. The structure of the sealing member which is characteristic of the plasma processing apparatus of the sixth embodiment will be described.

In one aspect of the plasma processing apparatus of the fifth embodiment, the polyimide film 70 is used as the elastic modulus ratio O between the wall surface 13c of the inner periphery of the lid member 13 and the wall surface 28a of the outer peripheral end of the dielectric sheet 28. At the same time as the spacer 60C made of a material having a large ring, an O-ring 29a having a high vacuum sealing property and an O-ring 29b having a high plasma resistance are provided. In the present embodiment, an O-ring 80 having a portion having a high vacuum sealing property and a material having a high plasma resistance is provided in one portion as a sealing member.

FIG. 18 is a partial cross-sectional view showing the connection portion (that is, the portion corresponding to the portion A of FIG. 1) of the dielectric sheet 28 of the plasma processing apparatus of the sixth embodiment and the support portion 13a of the lid member 13 in an enlarged manner. In addition, FIG. 19 is a partially enlarged plan view showing the upper surface of the support portion 13a of the cover member 13 in a state in which the dielectric sheet 28 of the plasma processing apparatus of the fifth embodiment is removed. As shown in FIG. 18 and FIG. 19, in the plasma processing apparatus of the sixth embodiment, the O-ring 80 is composed of two different materials. In other words, the portion 80A which is substantially half of the outer peripheral side of the O-ring 80 is formed of an elastic material having a high vacuum sealing property, and the portion 80B which is substantially half of the inner peripheral side (vacuum side) is made by the plasma resistance. Highly elastic material is formed. Here, the elastic material having high vacuum sealing property can be exemplified by Viton (registered trademark) and the like are representative of fluororubber. Further, examples of the elastic material having high plasma resistance include a fluorine-based resin such as polytetrafluoroethylene.

In the present embodiment, an O-ring 80 (a portion 80A having an elastic material having a high vacuum sealing property and a portion 80B having an elastic material having a high plasma resistance) having a two-layer structure inside and outside is used as a sealing member, whereby the O-shaped portion can be omitted. The ring is equipped in 2 places, as long as it is equipped in one place, it can prevent deterioration of the plasma and ensure vacuum tightness. Therefore, the number of parts can be reduced, and the number of operations required for the installation of the groove can be reduced from two to one.

In the same manner as the plasma processing apparatus according to the first to fourth embodiments, the plasma processing apparatus of the present embodiment has a larger elastic modulus than the O-ring between the support portion 13a of the cover member 13 and the dielectric sheet 28. The gap d formed by the spacer 60C made of the material is preferably in the range of 0.05 to 0.4 mm, more preferably in the range of 0.05 to 0.2 mm, and most preferably in the range of 0.05 to 0.08 mm. By this gap d, even if the cover member 13 or the dielectric plate 28 thermally expands due to the plasma irradiation in the processing container 1, or the dielectric plate 28 is deformed, the support portion 13a of the cover member 13 can be prevented from intervening. The electroless plate 28 is in contact with and rubbed. Therefore, it is possible to prevent the dielectric plate 28 from being broken or rubbing to generate particles. Further, similarly to the plasma processing apparatus of the fifth embodiment, by using the polyimide tape 70 having the adhesive layer 70B as the spacer 60C, displacement is less likely to occur, and even if the mounting groove 132 is not provided, it can be attached to the predetermined one. Positioned while positioned. Therefore, the processing work of the mounting groove of the spacer is not required. Further, the polyimine tape 70 as the spacer 60C, the O-ring 80 having the inner and outer two-layer structure, and the portion 80A of the elastic material having high vacuum sealing property can be sequentially provided from the outside to the inside (vacuum side), and the plasma resistant portion can be provided. With such a configuration, the portion 80B of the high-elastic material can prevent the deterioration of the O-ring while preventing the occurrence of damage or the occurrence of fine particles by the contact between the dielectric sheet 28 and the lid member 13, and the vacuum sealing property can be ensured for a long period of time. .

In the present embodiment, the same as the configuration shown in Figs. 8 and 9 of the third embodiment, a plurality of polyimide tapes 70 as spacers 60C may be intermittently provided. . It is preferable that the polyimide tape 70 is attached to two or more places (two or more divisions), and for example, it can be attached to three places (three divisions). Thereby, the polyimide tape 70 can be attached flatly on the surface of the step part of the support part 13a without wrinkles. Moreover, the gap d between the dielectric board 28 and the support portion 13a can be formed with high precision, so that there is no contact or friction between the dielectric board 28 and the support portion 13a, and damage or particulate of the dielectric board 28 can be prevented. occur.

Other configurations and effects of the present embodiment are the same as those of the first to third and fifth embodiments.

[Seventh embodiment]

Next, a plasma processing apparatus according to a seventh embodiment of the present invention will be described. The plasma processing apparatus of the present embodiment is different from the plasma processing apparatuses according to the first to sixth embodiments described above in that it is provided with a viewport for identifying the inside of the processing container 1. In other words, the plasma processing apparatus of the present embodiment maintains any of the features of the plasma processing apparatus according to the first to sixth embodiments described above. Hereinafter, the description of the configuration of the first to sixth embodiments will be omitted, and only the characteristic portions of the plasma processing apparatus of the seventh embodiment will be described.

FIG. 27 is a schematic cross-sectional view showing a configuration example of the plasma processing apparatus 101 of the embodiment. The plasma processing apparatus 101 is a viewport 200 provided with a state for confirming the plasma generation space S in the processing container 1 from the outside. Fig. 28 is an exploded perspective view showing the components of the viewport 200 of the plasma processing apparatus of Fig. 27 in an enlarged manner. 29 is an enlarged cross-sectional view of the viewport 200 in the horizontal direction. In the side wall 1b of the plasma processing apparatus 101 of the present embodiment, an opening 201 as an observation opening is formed. A protrusion 211 of a portion of the window member 210 is inserted into the opening 201. Then, the window member 210 is fixed from the outer side of the processing container 1 by a fixing plate 220 as a fixing member. Further, at the position corresponding to the opening 201 of the side wall 1b, the lining 7 is also provided with an opening.

The window member 210 is formed of, for example, a transparent material such as quartz. The window member 210 has a protruding portion 211 that is inserted into the opening 201 of the processing container 1, and a base portion 213 that is formed integrally with the protruding portion 211 and that is expanded into a flange shape. As shown in FIG. 28, the protruding portion 211 of the window member 210 protrudes in a direction orthogonal to the plate-like base portion 213. The front end surface 211a of the protruding portion 211 is curved in an arch shape. The curvature of the front end surface 211a is the same as that of the inner peripheral surface 1b _IN of the side wall 1b of the cylindrical processing container 1 as shown in FIG. Further, the amount of protrusion of the protruding portion 211 is determined by considering the thickness of the side wall 1b of the processing container 1. Further, the shape (width and thickness) and size (volume) of the protruding portion 211 are precisely processed to substantially match the shape (width and height) and size (volume of the space) of the opening 201 of the side wall 1b. That is, in the state in which the window member 210 is mounted, the inner surface of the opening portion 211 and the opening 201 of the side wall 1b is a pitch having a range in which the protruding portion 211 can be inserted into the opening 201, and the fitting is formed as seamless as possible. This pitch is a range in which the plasma does not enter the opening 201, and is preferably in the range of, for example, 0.1 mm to 2 mm, more preferably in the range of 0.5 mm to 1 mm.

The plate-shaped fixing plate 220 is formed to be larger than the base portion 213 of the window member 210 by, for example, metal such as aluminum or stainless steel. The fixing plate 220 has a concave portion 221 that is fitted into the base portion 213 of the window member 210, and a through opening 223 provided in the concave portion 221 . The fixing plate 220 is fitted into the base portion 213 of the window member 210 at the concave portion 221 thereof, and the window member 210 is pushed from the outside to the side wall 1b of the processing container 1 to be fixed. The fixing plate 220 is fixed to the side wall 1b at an arbitrary position by, for example, a screw. In Fig. 28, the screw holes 225 formed at the four corners of the fixing plate 220 are depicted, but are not limited to this position or number. The size of the through opening 223 is smaller than the base portion 213 of the window member 210 in order to secure the size of the inside of the processing container 1 and to securely fix the window member 210. From this through opening 223, the inside of the processing container 1 can be identified via the transparent window member 210. By securely fixing the window member 210 to the processing container 1 by using the fixing plate 220, it is sealed that the plasma does not leak outside the processing container 1.

As shown in FIG. 29, a groove 203 is formed in the side wall 1b of the processing container 1 so as to surround the opening 201. An O-ring 205 as a sealing member is fitted into the groove 203. The window member 210 is pushed to the side of the side wall 1b by the fixing plate 220 in a state where the protruding portion 211 is inserted into the opening 201 of the side wall 1b, so that the opening 201 can be secured by the O-ring 205 around the opening 201. Air tightness.

Here, the advantages of the plasma processing apparatus of the present embodiment will be described by comparison with a conventional plasma processing apparatus. In the conventional plasma processing apparatus, a flat window member made of a material such as quartz is attached so as to cover the opening of the processing container 1 from the outside (atmosphere side) to form a viewport. The periphery of the opening is sealed by being placed with an O-ring between the flat window member, and the airtightness is maintained. However, with such a conventional viewport structure, the plasma generated in the processing container enters the opening and is easily wound into the O-ring of the sealing portion, causing damage to the O-ring. The problem that the replacement life of the particles or the O-ring is shortened.

In response to the above problem, in the plasma processing apparatus of the present embodiment, the window member 210 is provided with the protruding portion 211 whose size is almost the same as the size of the opening 201 of the side wall 1b. That is, the opening 201 and the protruding portion 211 are fitted with almost no gap at a slight pitch. Therefore, it is possible to effectively prevent the plasma from being circulated from the plasma generation space S in the processing container 1 to the arrangement position of the O-ring 205 on the outer side of the opening 201. That is, the protruding portion 211 of the window member 210 has a function of preventing plasma from intruding into the opening 201. Therefore, it is possible to effectively prevent the plasma from being wound into the sealing portion via the opening 201, and the O-ring 205 is damaged and deteriorated to generate particles, or the replacement period is advanced.

Further, the front end surface 211a of the protruding portion 211 is formed by bending the inner peripheral surface 1b _IN of the side wall 1b of the cylindrical processing container 1 to have the same curvature. With such a characteristic shape, in a state where the window member 210 is attached to the side wall 1b, no step is generated between the inner peripheral surface 1b _{IN of the} side wall 1b and the window member 210. Thus, since there is no step difference, it is possible to prevent the plasma generated by the plasma generation space S in the processing container 1 from being affected, for example, the diffusion or distribution of the plasma is changed, and the plasma density is changed. Thereby, the treated body in the processing container 1 can be uniformly subjected to a stable plasma treatment.

As described above, according to the plasma processing apparatus 101 of the present embodiment, generation of particles from the viewport 200 can be reduced. Further, the configuration of the viewport 200 of the present embodiment is applied to the plasma processing apparatuses of the first to sixth embodiments, and it is possible to comprehensively prevent the occurrence of particles in the processing container 1 and to generate stable electricity. The slurry is used for plasma processing, so that a highly reliable semiconductor process can be realized. Other configurations and effects of the present embodiment are the same as those of the first to sixth embodiments.

[wear test]

Next, the results of the abrasion test after evaluating the durability will be described with respect to the polyimide tape 70 used in the plasma processing apparatus of the fifth and sixth embodiments. As shown in FIG. 20A and FIG. 20B, an evaluation apparatus is provided which is provided with a metal block 90 which is a support portion 13a of the cover member 13, and a movable quartz plate 91 which is a dielectric plate 28. . Then, a polyimine tape 70 having a thickness of 80 μm was attached to either of the block 90 or the quartz plate 91. In addition, a kapton tape (kapton is a registered trademark) manufactured by Teraoka Seisakusho Co., Ltd. was used as the polyimide tape 70.

20A shows a state in which the adhesive layer 70B of the polyimide tape 70 is attached to the block 90, and FIG. 20B shows a state in which the adhesive layer 70B of the polyimide tape 70 is attached to the quartz plate 91. Then, the block 90 is brought close to the quartz plate 91, and the polyimide tape 70 is pressure-bonded from the both sides at a pressure of 280,000 N from the opposite sides, and the quartz plate 91 is rotated 60,000 times by a reciprocating movement of 1 mm. Move in the left and right direction in Figs. 20A, 20B. The thickness of the polyimide tape 70 in the test was measured for the three samples, and the surface roughness of the polyimide tape 70 was measured by a surface roughness measuring instrument (SJ301 manufactured by Mitutoyo Co., Ltd.).

The relationship between the number of movements of the quartz plate 91 and the thickness of the polyimide tape 70 is shown in Figs. 21 and 22 . 21 is a result of attaching the adhesive layer 70B of the polyimide tape 70 to the block 90, and FIG. 22 is a case where the adhesive layer 70B of the polyimide tape 70 is attached to the quartz plate 91. As can be seen from Fig. 21, when the adhesive layer 70B of the polyimide tape 70 is attached to the block 90, the thickness of the polyimide tape 70 hardly changes after 60,000 reciprocating movements. Further, in the measurement of the surface roughness, the polyimide film 70, the block 90, and the quartz plate 91 were not roughened on the surface. On the other hand, as is clear from Fig. 22, when the adhesive layer 70B of the polyimide tape 70 is attached to the quartz plate 91, the film thickness of the polyimide tape 70 is reduced by about 10,000 times of reciprocating movement. Further, in the measurement of the surface roughness, scratches were observed on the surfaces of the polyimide tape 70 and the block 90, and it was feared that particles were generated.

As a result of the above, in the fifth and sixth embodiments, the polyimide tape 70 used as the spacer 60C is attached to the support member 13a of the cover member 13 than to be attached to the dielectric plate 28. ideal.

[nitriding operation test]

Next, a result of an operation test for performing plasma nitriding treatment on 30,000 wafers W using the plasma processing apparatus having the same configuration as that of the fifth and sixth embodiments will be described. This operation test evaluated the uniformity of the nitrogen concentration between the wafers W, the number of particles, the contamination, and the gap between the dielectric plate and the support portion of the cover member. The conditions for the plasma nitriding treatment of the surface of the wafer W are processing pressure; 30 Pa, Ar flow; 660 mL/min (sccm), N ₂ flow rate; 200 mL/min (sccm), microwave power; 1950 W, processing temperature It was carried out at 500 ° C for 50 seconds. In addition, Kapton Co., Ltd. is used. Tape (Kapton It is a registered trademark; thickness 80 μm) as a polyimide tape 70.

First, the gap d between the dielectric board 28 before and after the processing of 30,000 wafers W and the support portion 13a of the lid member 13 is measured. As a result, the gap d was 80.4 μm before the treatment and 80.9 μm after the treatment. Therefore, by interposing the polyimide tape 70, the gap d between the dielectric sheet 28 and the support portion 13a of the lid member 13 can be kept constant for a long period of time.

The result of the uniformity of the nitrogen concentration between the wafers W is shown in FIG. As a result, it was found that in the 30,000-piece treatment, the nitrogen concentration was stably shifted between approximately 0.2 and 0.4 [atom%], and the uniformity of the treatment between the wafers W was probable.

Fig. 24 shows the transition of the number of particles having a size of 0.12 μm or more measured by a particle counter. From this result, it was found that the number of particles detected was approximately five or less after 30,000 sheets of treatment. No occurrence of particles caused by the rubbing of the polyimide tape 70 itself or the friction between the dielectric plate 28 and the support portion 13a of the cover member 13 was observed. In addition, although 10 or more microparticles were detected in the measurement result of the 15,000th sheet, the possibility of measurement error is high.

25 and 26 show the results of contamination of Li, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Co, Zn, and Cu. As a result, the correlation was not observed, and after 30,000 sheets of processing, once the number of processed sheets increased, the correlation was also increased. This is conceivable because the occurrence of contamination from the cover member 13 can be suppressed as a result of the friction of the dielectric plate 28 and the support portion 13a of the cover member 13 by the presence of the polyimide tape 70.

The embodiments of the present invention have been described in detail by way of examples, but the present invention is not limited to the embodiments described above, and various modifications may be made. For example, in the above embodiment, the RLSA type plasma processing apparatus 100 is used. However, other types of plasma processing apparatuses such as inductively coupled plasma (ICP) and surface wave plasma (SWP) may be used. Processing device.

In the above embodiment, the plasma nitridation treatment using the semiconductor wafer as the object to be processed is described as an example. However, the substrate to be processed may be, for example, a substrate for FPD (flat panel display) or the sun. A substrate for a battery or the like.

This international application is based on the Japan National Patent Application No. 2010-81984, which was filed on March 31, 2010, and the Japanese Patent Application No. 2010-221270, which was filed on September 30, 2010. The full content is used for this.

1. . . Processing container

1a. . . Bottom wall

1b. . . Side wall

1b _IN . . . Inner circumference

2. . . Mounting table

3. . . Support component

4. . . Cover member

5. . . Heater

5a. . . Heater power supply

6. . . Thermocouple

7. . . lining

8. . . Baffle

8a. . . Vent

9. . . pillar

10. . . Opening

11. . . Exhaust chamber

12. . . exhaust pipe

13. . . Cover member

13a. . . Support department

13b. . . Corner

13c. . . Wall

14. . . Sealing member

15. . . Gas introduction

16. . . Move into the exit

17. . . gate

18. . . Gas supply device

19a. . . Rare gas supply

19b. . . Nitrogen supply source

20a, 20b, 20c. . . Gas route

21a, 21b. . . Mass flow controller

22a, 22b. . . Open and close valve

twenty four. . . Exhaust

27. . . Microwave introduction device

28. . . Dielectric plate

28A. . . Dielectric plate

28a. . . Wall

28b. . . Notch

29a. . . O-ring

29b. . . O-ring

31. . . Planar antenna

32. . . Microwave radiation hole

33. . . Wave retardant

34. . . Metal cover member

34a. . . Cooling water flow path

35. . . Sealing member

36. . . Opening

37. . . Waveguide

37a. . . Coaxial waveguide

37b. . . Rectangular waveguide

38. . . Matching circuit

39. . . Microwave generating device

40. . . Mode converter

41. . . Inner conductor

50. . . Control department

51. . . Process controller

52. . . user interface

53. . . Memory department

60. . . Spacer

60A. . . Spacer

60B. . . Spacer

60C. . . Spacer

70. . . Polyimide tape

70A. . . Polyimine film layer

70B. . . Adhesive layer

80. . . O-ring

90. . . Block

91. . . Quartz plate

100. . . Plasma processing device

101. . . Plasma processing device

131,132. . . Installation trench

132A. . . Installation trench

200. . . Viewport

201. . . Opening

203. . . ditch

205. . . O-ring

210. . . Window member

211. . . Protruding

211a. . . Front end face

213. . . Base

220. . . Fixed plate

221. . . Concave

223. . . Through opening

220. . . Fixed plate

W. . . Wafer

d. . . gap

S. . . Plasma generation space

Fig. 1 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus according to an embodiment of the present invention.

Fig. 2 is a structural view showing a planar antenna.

3 is a view showing the configuration of a control unit.

Fig. 4 is a partial cross-sectional view showing, in detail, a connection portion between a dielectric plate of a plasma processing apparatus according to the first embodiment and a support portion of a cover member.

Fig. 5 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the first embodiment.

Fig. 6 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a second embodiment and a support portion of a cover member.

Fig. 7 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the second embodiment.

Fig. 8 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the third embodiment.

Fig. 9 is a cross-sectional view showing another portion of the end surface and the upper surface of the cover member in detail, partially showing the dielectric sheet of the plasma processing apparatus of the third embodiment.

Fig. 10 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a fourth embodiment and a support portion of a lid member.

Fig. 11 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the fourth embodiment.

FIG. 12 is a partial cross-sectional view showing a portion where the dielectric plate of the plasma processing apparatus according to the modification of the fourth embodiment is connected to the support portion of the cover member in an enlarged manner.

Fig. 13 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a fifth embodiment and a support portion of a cover member.

Fig. 14 is a partial cross-sectional view showing the end surface and the upper surface of the detailed display cover member partially enlarged by removing the dielectric plate of the plasma processing apparatus of the fifth embodiment.

Fig. 15 is a cross-sectional view showing the structure of a polyimide tape used in the fifth embodiment.

FIG. 16 is a partial cross-sectional view showing a portion where the dielectric plate of the plasma processing apparatus according to the modification of the fifth embodiment is connected to the support portion of the cover member in an enlarged manner.

Fig. 17 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus according to the modification of the fifth embodiment.

Fig. 18 is a partial cross-sectional view showing, in detail, a connection portion of a dielectric plate of a plasma processing apparatus according to a sixth embodiment and a support portion of a cover member.

Fig. 19 is a partial cross-sectional view showing the end surface and the upper surface of the cover member in detail, partially removed, by removing the dielectric plate of the plasma processing apparatus of the sixth embodiment.

Fig. 20A is a view for explaining an abrasion test in which a polyimide film tape is attached to a block side.

Fig. 20B is a view showing the wear test for attaching the polyimide tape to the side of the quartz plate.

21 is a graph showing the evaluation results of the abrasion test when the polyimide tape is attached to the block side.

Fig. 22 is a graph showing the results of evaluation of the abrasion test when the polyimide tape is attached to the quartz plate side.

Fig. 23 is a graph showing the results of the uniformity of the nitrogen concentration between wafers in the operation test of the plasma nitriding treatment.

Fig. 24 is a graph showing the measurement results of the number of particles in the operation test of the plasma nitriding treatment.

Fig. 25 is a graph showing the results of contamination measurement in the operation test of the plasma nitriding treatment.

Fig. 26 is a graph showing the results of contamination measurement in the operation test of the plasma nitriding treatment.

FIG. 27 is a schematic cross-sectional view showing a configuration example of a plasma processing apparatus according to a seventh embodiment of the present invention.

Fig. 28 is a view showing an enlarged state of a constituent member of a viewport;

Fig. 29 is a cross-sectional view showing an essential part of a horizontal cross section in the vicinity of a viewport;

5a. . . Heater power supply

18. . . Gas supply device

twenty four. . . Exhaust

39. . . Microwave generating device

50. . . Control department

51. . . Process controller

52. . . user interface

53. . . Memory department

Claims (20)

A plasma processing apparatus comprising: a processing container having a plasma processing space therein and an upper opening; a dielectric plate blocking an upper portion of the plasma processing space; and a cover member disposed on the cover member An upper portion of the processing container has an annular support portion for supporting an outer peripheral portion of the dielectric plate; and a sealing member is disposed between the support portion and the dielectric plate for sealing the plasma treatment a spacer; the spacer is disposed on an outer peripheral side of the sealing member, and a gap is formed between the support portion and the dielectric plate, and the spacer is formed of a fluorine resin or a polyimide resin. The gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is 0.05 to 0.4 mm, and the elastic modulus of the spacer is greater than the elastic modulus of the sealing member. In the range of 200 to 500 kgf/mm 2 , the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, and the first portion is vacuum sealed compared to the second portion. Partially high material Configuration, the second portion based plasma resistance formed by the first portion of the high ratio materials. The plasma processing apparatus according to claim 1, wherein the spacer is intermittently provided on an outer peripheral side of the sealing member. The plasma processing apparatus according to claim 1, wherein the spacer is a polyimide film having a polyimide film layer and an adhesive layer. The plasma processing apparatus according to claim 3, wherein the adhesive layer of the spacer is attached to the support portion and fixed. The plasma processing apparatus according to the first aspect of the invention, wherein the sealing member includes a first sealing member and a second sealing member provided on an inner circumferential side of the first sealing member. The plasma processing apparatus according to claim 5, wherein the first sealing member is made of a fluorine-based resin. The plasma processing apparatus according to claim 6, wherein the second sealing member is formed of a fluorine-based resin having higher plasma resistance than the first sealing member. The plasma processing apparatus according to claim 1, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.2 mm. The plasma processing apparatus according to claim 1, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.08 mm. The plasma processing apparatus according to claim 1, wherein a distance between the spacer and the sealing member is in a range of 1 to 10 mm. The plasma processing apparatus according to claim 1, wherein a gap in a range of 0.1 to 1 mm is formed between a wall surface of the inner periphery of the cover member and an outer peripheral side wall of the dielectric plate. The plasma processing apparatus of claim 11, wherein the dielectric plate is positioned in a horizontal direction by the spacer. A plasma processing method for processing a processed object by using a plasma processing apparatus, the plasma processing apparatus comprising: a processing container having a plasma processing space inside, and an upper opening; a dielectric plate; Blocking an upper portion of the plasma processing space; a cover member disposed on an upper portion of the processing container and having an annular support portion supporting an outer peripheral portion of the dielectric plate; and a sealing member attached to the a gap between the support portion and the dielectric plate for sealing the plasma processing space; and a spacer disposed on an outer peripheral side of the sealing member to form a gap between the support portion and the dielectric plate. The spacer is formed of a fluorine resin or a polyimide resin, and a gap between the upper surface of the support portion and the lower surface of the dielectric plate formed by the spacer is 0.05 to 0.4 mm. In the range of 200 to 500 kgf/mm 2 in which the elastic modulus of the spacer is larger than the elastic modulus of the sealing member, the sealing member has a first portion and an inner peripheral side of the first portion. Part 2 Said first portion by a vacuum-based sealing portion is higher than the second material is constituted, by the second portion based plasma resistance than the material of the first portion is constituted. The plasma processing method according to claim 13, wherein the sealing member has a first portion and a second portion provided on an inner peripheral side of the first portion, wherein the first portion is sealed by a vacuum The material is made of a material higher than the second portion, and the second portion is made of a material having higher plasma resistance than the first portion. The plasma processing method according to claim 13, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.2 mm. The plasma processing method according to claim 13, wherein a gap between the upper surface of the support portion formed by the spacer and the lower surface of the dielectric plate is in a range of 0.05 to 0.08 mm. The plasma processing method according to claim 13, wherein the interval between the spacer and the sealing member is in a range of 1 to 10 mm. A plasma processing apparatus comprising: a processing container having a plasma processing space therein and an upper opening; a dielectric plate blocking an upper portion of the plasma processing space; and a cover member disposed on the cover member An upper portion of the processing container has an annular support portion for supporting an outer peripheral portion of the dielectric plate; and a sealing member is disposed between the support portion and the dielectric plate for sealing the plasma treatment a spacer; the spacer is disposed on an outer peripheral side of the sealing member, forming a gap between the support portion and the dielectric plate; and an observation window for identifying the inside of the processing container, The observation window includes a transparent window member including a protruding portion that is inserted into an observation opening formed in a side wall of the processing container, and a fixing member that fixes the window member from the outside; the sealing member Between the side wall of the processing container and the window member, the inner surface of the observation opening is formed in a gas-tight manner around the opening of the observation opening, and the surface of the protruding portion is formed so that the protruding portion can be inserted into the observation opening The pitch in the range of the portion is fitted without a gap, and the protruding portion is inserted into the observation opening, whereby the window member is attached to the side wall of the processing container. The plasma processing apparatus according to claim 18, wherein the front end surface of the protruding portion is curved and formed in a shape matching an inner wall surface of a side wall of the processing container. The plasma processing apparatus according to claim 18, wherein a distance between a surface of the protruding portion and an inner surface of the observation opening is in a range of 0.1 mm to 2 mm.