TWI485981B - High-efficiency single to differential amplifier - Google Patents
High-efficiency single to differential amplifier Download PDFInfo
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- TWI485981B TWI485981B TW099101647A TW99101647A TWI485981B TW I485981 B TWI485981 B TW I485981B TW 099101647 A TW099101647 A TW 099101647A TW 99101647 A TW99101647 A TW 99101647A TW I485981 B TWI485981 B TW I485981B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45098—PI types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45166—Only one input of the dif amp being used for an input signal
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Description
本發明係有關於一種單端轉雙端放大器，尤指一種具有電流重覆使用特性的高效率單端轉雙端放大器。The present invention relates to a single-ended to double-ended amplifier, and more particularly to a high efficiency single-ended to double-ended amplifier having current repetitive use characteristics.
目前，電子裝置隨處可見，在任何可以想到的地方都可找到他們的蹤跡，例如家裡、工作場所、汽車內、甚至我們的口袋裡。另外隨著科技進步，在同樣價格下，電子裝置變的更加輕薄短小、更省電、卻提供更多更強大的功能。部分原因是由於更小的電子元件唾手可得，像是電晶體、晶片電容等。然而，可改善規格的新穎電路架構也是提升上述電子裝置效能的一部分原因。At present, electronic devices are everywhere, and they can be found in any place you can think of, such as at home, in the workplace, in the car, or even in our pockets. In addition, with the advancement of technology, at the same price, electronic devices have become lighter, thinner, more power-efficient, but provide more powerful functions. Part of the reason is because smaller electronic components are readily available, such as transistors, wafer capacitors, and so on. However, novel circuit architectures that improve specifications are also part of the reason for improving the performance of such electronic devices.
放大器幾乎是每一電子裝置中的關鍵元件。放大器的電子特性變化範圍非常廣，像是增益、頻寬、及線性度等；其應用範圍也相當廣泛，像是主動濾波器(active filter)、緩衝器、類比訊號轉數位訊號(analog-to-digital)的轉換器、及RF收發器等。Amplifiers are almost a critical component in every electronic device. The electronic characteristics of the amplifier vary widely, such as gain, bandwidth, and linearity. The application range is also quite extensive, such as active filter, buffer, analog signal to digital signal (analog-to -digital converter, RF transceiver, etc.
應用在不同領域的放大器，其架構不盡相同，其中一種放大器是單端轉雙端放大器，其在RF電路的應用中普遍當作一種功率放大器。請參照第1圖，第1圖係依據先前技術說明一單端轉雙端放大器100的示意圖。單端轉雙端放大器100包括一第一電晶體Q1，一第二電晶體Q2，一第一負載Z1，一第二負載Z2，一偏壓電晶體Qb，以及一第一電容C1。第一負載Z1係耦合在第一電晶體Q1的集極和一第一供應電源之間，第二負載Z2係耦合在第二電晶體Q2的集極和該第一供應電源之間。第一電容C1是耦接在第二電晶體Q2的基極和一交流地端(AC ground)。第一電晶體Q1的射極係耦接到第二電晶體Q2的射極和偏壓電晶體Qb的集極。偏壓電晶體Qb的射極係耦接到地。第一電晶體Q1的基極輸入一單端訊號，第一電晶體Q1的集極和第二電晶體Q2的集極分別輸出差動訊號的一支。The amplifiers used in different fields have different architectures. One of them is a single-ended to double-ended amplifier, which is commonly used as a power amplifier in RF circuit applications. Please refer to FIG. 1. FIG. 1 is a schematic diagram of a single-ended to double-ended amplifier 100 according to the prior art. The single-ended to double-ended amplifier 100 includes a first transistor Q1, a second transistor Q2, a first load Z1, a second load Z2, a bias transistor Qb, and a first capacitor C1. The first load Z1 is coupled between the collector of the first transistor Q1 and a first supply, and the second load Z2 is coupled between the collector of the second transistor Q2 and the first supply. The first capacitor C1 is coupled to the base of the second transistor Q2 and an AC ground. The emitter of the first transistor Q1 is coupled to the emitter of the second transistor Q2 and the collector of the bias transistor Qb. The emitter of the bias transistor Qb is coupled to ground. The base of the first transistor Q1 is input with a single-ended signal, and the collector of the first transistor Q1 and the collector of the second transistor Q2 respectively output one of the differential signals.
在單端轉雙端放大器100的架構中，流經第一電晶體Q1和第二電晶體Q2的偏壓電流皆為I。因此，流經偏壓電晶體Qb的偏壓電流是2I。但單端轉雙端放大器100並非特別有效率，因為偏壓電晶體Qb僅作為提供直流電流的電流源，並不提供放大功能。所以，在單端轉雙端放大器100的架構中，三個電晶體Q1、Q2及Qb僅形成一“單級”的單端轉雙端放大器。In the architecture of the single-ended to double-ended amplifier 100, the bias currents flowing through the first transistor Q1 and the second transistor Q2 are both I. Therefore, the bias current flowing through the bias transistor Qb is 2I. However, the single-ended to double-ended amplifier 100 is not particularly efficient because the bias transistor Qb serves only as a current source for supplying a direct current and does not provide an amplification function. Therefore, in the architecture of the single-ended to double-ended amplifier 100, the three transistors Q1, Q2, and Qb form only a "single-stage" single-ended to double-ended amplifier.
請參照第3圖，第3圖係根據先前技術說明一單端轉雙端低雜訊放大器(low noise amplifier,LNA)30的示意圖。第3圖中的單端轉雙端低雜訊放大器包括兩電晶體301、302，兩電流源303、304，兩電流源309、310，兩放大器305、306，一電阻320，一電容322，一電阻307，一電阻308，一電阻324，一電容321，及一電容325。兩電晶體301、302被兩電流源303、304以及另兩電流源309、310所偏壓，其中兩電流源303、304電連接至供應電源Vcc，以及兩電流源309、310電連接至地端。電阻320電連接至兩電晶體301、302的射極，作為一回授元件。低雜訊放大器在節點INH輸入訊號，且在節點LMD透過電容322耦接至交流地端。放大器305、306分別放大來自電晶體301、302的集極的輸出，而電阻307、308提供負回授，確保流經電晶體301、302的電流固定。利用電阻307、308、及320不僅改善低雜訊放大器的雜訊效能，也降低電晶體301、302的偏壓電流。Please refer to FIG. 3, which is a schematic diagram of a single-ended to double-ended low noise amplifier (LNA) 30 according to the prior art. The single-ended to double-ended low-noise amplifier in FIG. 3 includes two transistors 301 and 302, two current sources 303 and 304, two current sources 309 and 310, two amplifiers 305 and 306, a resistor 320, and a capacitor 322. A resistor 307, a resistor 308, a resistor 324, a capacitor 321, and a capacitor 325. The two transistors 301, 302 are biased by two current sources 303, 304 and two other current sources 309, 310, wherein the two current sources 303, 304 are electrically coupled to the supply source Vcc, and the two current sources 309, 310 are electrically coupled to ground. end. The resistor 320 is electrically connected to the emitters of the two transistors 301, 302 as a feedback element. The low noise amplifier inputs a signal at the node INH and is coupled to the AC ground through the capacitor L32 at the node LMD. Amplifiers 305, 306 amplify the outputs from the collectors of transistors 301, 302, respectively, while resistors 307, 308 provide negative feedback to ensure that the current flowing through transistors 301, 302 is fixed. The use of resistors 307, 308, and 320 not only improves the noise performance of the low noise amplifier, but also reduces the bias current of the transistors 301, 302.
請參照第4圖，第4圖係依據先前技術說明一第二單端轉雙端放大器40的示意圖。放大器40包括一偏壓電路419，其供給偏壓電流給一電晶體432和一電晶體422。電壓轉電流元件425轉換從節點423接收的一輸入電壓成為一輸入電流。該輸入電流造成流經電晶體432和電晶體422的電流有差動變化，而差動的電流係由二極體436、438所輸出。因此，放大器40可產生一差動輸出訊號。Please refer to FIG. 4, which is a schematic diagram of a second single-ended to double-ended amplifier 40 in accordance with the prior art. Amplifier 40 includes a biasing circuit 419 that supplies a bias current to a transistor 432 and a transistor 422. Voltage to current component 425 converts an input voltage received from node 423 into an input current. The input current causes a differential change in the current flowing through the transistor 432 and the transistor 422, and the differential current is output by the diodes 436, 438. Therefore, amplifier 40 can generate a differential output signal.
上述先前技術提供不同架構的單端轉雙端放大器，但沒有一種架構的效能可符合今日輕薄短小以及更加省電的需求。The above prior art provides single-ended to double-ended amplifiers of different architectures, but none of the architectures can meet the requirements of today's thin and light and more power-saving.
本發明之一實施例提供一種高效率的單端轉雙端放大器，包括一第一電晶體，具有一第一端用以接收一輸入訊號，一第二端，和一第三端耦接至一第二供應電源；一第二電晶體，具有一第一端，一第二端用以提供一第一差動輸出訊號，和一第三端；一第三電晶體，具有一第一端耦接至一交流地端(AC ground)，一第二端用以提供一第二差動輸出訊號，和一第三端耦接至該第二電晶體的該第三端；一第一扼流圈(choke)，耦接在該第二電晶體的該第二端和一第一供應電源之間；一第二扼流圈，耦接在該第三電晶體的該第二端和該第一供應電源之間；一功率耦合模組(power coupling module)，耦接在該第二電晶體的該第一端和該第一電晶體的該第二端之間；及一腔，耦接在該第一電晶體的該第二端和該第二電晶體的該第三端之間。An embodiment of the present invention provides a high efficiency single-ended to double-ended amplifier, including a first transistor having a first end for receiving an input signal, a second end, and a third end coupled to a second power supply; a second transistor having a first end, a second end for providing a first differential output signal, and a third end; a third transistor having a first end The second end is coupled to an AC ground, the second end is configured to provide a second differential output signal, and the third end is coupled to the third end of the second transistor; a choke coupled between the second end of the second transistor and a first supply; a second choke coupled to the second end of the third transistor and the a first power supply; a power coupling module coupled between the first end of the second transistor and the second end of the first transistor; and a cavity, coupled Connected between the second end of the first transistor and the third end of the second transistor.
請參照第2圖，第2圖係本發明的一實施例說明高效率的單端轉雙端放大器200的示意圖。放大器200透過一輸入匹配電路210輸入一單端訊號，經由一輸出匹配電路220輸出一匹配輸出訊號，並由一第一偏壓電路230和一第二偏壓電路240所偏壓。放大器200包括一第一電晶體M1，和一第一阻抗元件L1。第一電晶體M1包括一源極，透過第一阻抗元件L1耦接至一第二供應電源，一閘極，耦接至輸入匹配電路210，用以接收單端輸入訊號，以及一汲極，用以輸出一第一輸出訊號。第一電晶體M1係由第二偏壓電路240所偏壓。第一阻抗元件L1可包括一電感、一接合線、一接地線(down-bond)、一微帶線(microstrip line)、一微帶網路(microstrip network)、一互連線(interconnect line)，及一通孔(via hole)中之其一。Please refer to FIG. 2. FIG. 2 is a schematic diagram showing a high efficiency single-ended to double-ended amplifier 200 according to an embodiment of the present invention. The amplifier 200 inputs a single-ended signal through an input matching circuit 210, and outputs a matching output signal via an output matching circuit 220, and is biased by a first bias circuit 230 and a second bias circuit 240. The amplifier 200 includes a first transistor M1 and a first impedance element L1. The first transistor M1 includes a source coupled to a second supply via a first impedance element L1, and a gate coupled to the input matching circuit 210 for receiving a single-ended input signal and a drain. Used to output a first output signal. The first transistor M1 is biased by the second bias circuit 240. The first impedance element L1 may include an inductor, a bonding wire, a down-bond, a microstrip line, a microstrip network, and an interconnect line. And one of the via holes.
放大器200另包括一第二電晶體M2、一第三電晶體M3、一第一扼流圈(choke)260、一第二扼流圈270、一腔250、一第一電容C1、及一耦合模組C2。第二電晶體M2的閘極透過耦合模組C2從第一電晶體M1的汲極輸入該第一輸出訊號。耦合模組C2可以是一功率耦合網路(power coupling network)、一電容，以及一匹配網路中的其一。第二電晶體M2的汲極係透過第一扼流圈Choke1耦接至一第一供應電源，第二電晶體M2的源極係耦接至第三電晶體M3的源極。第三電晶體M3的閘極係透過第一電容C1耦接至交流地端，第三電晶體M3的汲極係透過第二扼流圈270耦接至該第一供應電源。第二電晶體M2和第三電晶體M3藉由第一偏壓電路230偏壓。第二電晶體M2的汲極和第三電晶體M3的汲極耦接至輸出匹配電路220，用以輸出差動輸出訊號。每一扼流圈260、270可包括一電感、一電容電感共振腔(LC tank)、一主動負載、一接合線、一互連線、一微帶線、一微帶網路、及一電阻中之其一。The amplifier 200 further includes a second transistor M2, a third transistor M3, a first choke 260, a second choke 270, a cavity 250, a first capacitor C1, and a coupling. Module C2. The gate of the second transistor M2 is input to the first output signal from the drain of the first transistor M1 through the coupling module C2. The coupling module C2 can be a power coupling network, a capacitor, and one of a matching network. The drain of the second transistor M2 is coupled to a first supply via the first choke Choke1, and the source of the second transistor M2 is coupled to the source of the third transistor M3. The gate of the third transistor M3 is coupled to the AC ground through the first capacitor C1, and the drain of the third transistor M3 is coupled to the first supply via the second choke 270. The second transistor M2 and the third transistor M3 are biased by the first bias circuit 230. The drain of the second transistor M2 and the drain of the third transistor M3 are coupled to the output matching circuit 220 for outputting a differential output signal. Each choke 260, 270 can include an inductor, a capacitive LC cavity, an active load, a bond wire, an interconnect, a microstrip line, a microstrip network, and a resistor. One of them.
第二電晶體M2的源極和第三電晶體M3的源極透過一腔250耦接至第一電晶體M1的汲極。請參照第5圖，第5圖係說明腔250的示意圖。第5圖是實現腔250的一種方式，腔250包括三條並聯電路，第一條並聯電路是一電感510串聯一第一電阻511，第二條並聯電路是一電容520串聯一第二電阻521，第三條並聯電路是一第三電阻530。The source of the second transistor M2 and the source of the third transistor M3 are coupled to the drain of the first transistor M1 through a cavity 250. Please refer to FIG. 5, which is a schematic view of the cavity 250. FIG. 5 is a schematic diagram of the implementation of the cavity 250. The cavity 250 includes three parallel circuits. The first parallel circuit is an inductor 510 connected in series with a first resistor 511, and the second parallel circuit is a capacitor 520 connected in series with a second resistor 521. The third parallel circuit is a third resistor 530.
操作上第一電晶體M1同時做為第一級放大器和第二電晶體M2、第三電晶體M3的直流電流源，第二電晶體M2、第三電晶體M3形成第二級放大器，第二級放大器透過耦合模組C2放大第一電晶體M1的輸出訊號，且將單端訊號(第一電晶體M1的輸出訊號)轉成雙端訊號。腔250運作在高頻時提供高阻抗，隔離第一電晶體M1的汲極和第二電晶體M2、第三電晶體M3的共源極節點。腔250運作在低頻(直流狀況)時提供低阻抗，此時第一電晶體M1的汲極和第二電晶體M2、第三電晶體M3的共源極節點之間導通，所以第一電晶體M1的直流電流可被第二電晶體M2、第三電晶體M3重覆使用(reuse)。The first transistor M1 is operated as a DC current source of the first stage amplifier and the second transistor M2 and the third transistor M3, and the second transistor M2 and the third transistor M3 form a second stage amplifier, and the second The stage amplifier amplifies the output signal of the first transistor M1 through the coupling module C2, and converts the single-ended signal (the output signal of the first transistor M1) into a double-ended signal. The cavity 250 operates to provide high impedance at high frequencies, isolating the drain of the first transistor M1 and the common source node of the second transistor M2 and the third transistor M3. The cavity 250 operates at a low frequency (DC condition) to provide a low impedance, at which time the drain of the first transistor M1 and the common source node of the second transistor M2 and the third transistor M3 are turned on, so the first transistor The direct current of M1 can be reused by the second transistor M2 and the third transistor M3.
放大器200之所以比上述先前技術的放大器更有效率是在於執行兩級放大效果卻只消耗和傳統一級單端轉雙端放大器一樣的電流。The reason why the amplifier 200 is more efficient than the prior art amplifiers described above is that it performs a two-stage amplification effect and consumes only the same current as a conventional one-stage single-ended to double-ended amplifier.
請注意第2圖的三個電晶體(M1,M2,M3)可包括雙極接面電晶體(bipolar junction transistor,BJT)、異質接面雙極電晶體(heterojunction bipolar transistor,HBT)，以及金屬半導體場效電晶體(metal-semiconductor field-effect transistor,MESFET)中之其一。本發明並不受限於第2圖所示的金氧半場效電晶體(metal-oxide-semiconductor field-effect transistor,MOSFET)。例如，如果使用雙極接面電晶體，則三個電晶體的第一端、第二端、以及第三端分別為基極、集極、和射極。另外，在本發明揭露的電路架構中的每一個電容，可包括金屬-絕緣體-金屬電容(metal-insulator-metal capacitor,MIM)、金屬-氧化物-金屬電容(metal-oxide-metal capacitor,MOM)、指插型電容(interdigital capacitor,IDC)、金氧半場效電晶體閘極電容(MOSFET gate capacitor)、多晶電容(poly-capacitor)、微帶線電容(microstrip line capacitor)，以及接面電容(junction capacitor)中之其一。Please note that the three transistors (M1, M2, M3) in Fig. 2 may include a bipolar junction transistor (BJT), a heterojunction bipolar transistor (HBT), and a metal. One of a metal-semiconductor field-effect transistor (MESFET). The present invention is not limited to the metal-oxide-semiconductor field-effect transistor (MOSFET) shown in Fig. 2. For example, if a bipolar junction transistor is used, the first, second, and third ends of the three transistors are a base, a collector, and an emitter, respectively. In addition, each of the capacitors in the circuit architecture disclosed by the present invention may include a metal-insulator-metal capacitor (MIM), a metal-oxide-metal capacitor (MOM). ), interdigital capacitor (IDC), MOSFET gate capacitor, poly-capacitor, microstrip line capacitor, and junction One of the capacitors.
總結來說，放大器200在第一電晶體M1、第二電晶體M2、和第三電晶體M3採用電流重覆使用的技術，使得放大器200的效率超過先前技術所揭露的放大器。In summary, the amplifier 200 employs a technique of current repetitive use in the first transistor M1, the second transistor M2, and the third transistor M3, such that the efficiency of the amplifier 200 exceeds that of the prior art disclosed.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
30．．．單端轉雙端低雜訊放大器30. . . Single-ended to double-ended low noise amplifier
40．．．第二單端轉雙端放大器40. . . Second single-ended to double-ended amplifier
100、200．．．單端轉雙端放大器100, 200. . . Single-ended to double-ended amplifier
210．．．輸入匹配電路210. . . Input matching circuit
220．．．輸出匹配電路220. . . Output matching circuit
230．．．第一偏壓電路230. . . First bias circuit
240．．．第二偏壓電路240. . . Second bias circuit
250．．．腔250. . . Cavity
260．．．第一扼流圈260. . . First choke
270．．．第二扼流圈270. . . Second choke
301、302、432、422．．．電晶體301, 302, 432, 422. . . Transistor
303、304、309、310．．．電流源303, 304, 309, 310. . . Battery
305、306．．．放大器305, 306. . . Amplifier
320、307、308、324．．．電阻320, 307, 308, 324. . . resistance
419．．．偏壓電路419. . . Bias circuit
425．．．電壓轉電流元件425. . . Voltage to current component
436、438．．．二極體436, 438. . . Dipole
510．．．電感510. . . inductance
511．．．第一電阻511. . . First resistance
520、321、325．．．電容520, 321, 325. . . capacitance
521．．．第二電阻521. . . Second resistance
530．．．第三電阻530. . . Third resistance
C1．．．第一電容C1. . . First capacitor
C2．．．耦合模組C2. . . Coupling module
INH、LMD、423．．．節點INH, LMD, 423. . . node
L1．．．第一阻抗元件L1. . . First impedance element
Q1、M1．．．第一電晶體Q1, M1. . . First transistor
Q2、M2．．．第二電晶體Q2, M2. . . Second transistor
M3．．．第三電晶體M3. . . Third transistor
Qb．．．偏壓電晶體Qb. . . Bias transistor
Z1．．．第一負載Z1. . . First load
Z2．．．第二負載Z2. . . Second load
第1圖係依據先前技術說明單端轉雙端放大器的示意圖。Figure 1 is a schematic illustration of a single-ended to double-ended amplifier in accordance with the prior art.
第2圖係本發明的一實施例說明單端轉雙端放大器的示意圖。Fig. 2 is a schematic view showing a single-ended to double-ended amplifier according to an embodiment of the present invention.
第3圖係依據先前技術說明單端轉雙端低雜訊放大器的示意圖。Figure 3 is a schematic diagram of a single-ended to double-ended low noise amplifier according to the prior art.
第4圖係依據先前技術說明第二單端轉雙端放大器的示意圖。Figure 4 is a schematic illustration of a second single-ended to double-ended amplifier in accordance with the prior art.
第5圖係本發明的一實施例說明第2圖中的腔的示意圖。Figure 5 is a schematic view showing the cavity in Figure 2 in an embodiment of the present invention.
200．．．單端轉雙端放大器200. . . Single-ended to double-ended amplifier
210．．．輸入匹配電路210. . . Input matching circuit
220．．．輸出匹配電路220. . . Output matching circuit
230．．．第一偏壓電路230. . . First bias circuit
240．．．第二偏壓電路240. . . Second bias circuit
250．．．腔250. . . Cavity
260．．．第一扼流圈260. . . First choke
270．．．第二扼流圈270. . . Second choke
C1．．．第一電容C1. . . First capacitor
C2．．．耦合模組C2. . . Coupling module
L1．．．第一阻抗元件L1. . . First impedance element
M1．．．第一電晶體M1. . . First transistor
M2．．．第二電晶體M2. . . Second transistor
M3．．．第三電晶體M3. . . Third transistor
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| US8680927B2 (en) * | 2011-03-29 | 2014-03-25 | Sony Corporation | System and method for effectively implementing a front end for a transimpedance amplifier |
| TWI454052B (en) * | 2011-04-01 | 2014-09-21 | Realtek Semiconductor Corp | Single-to-differential conversion circuit |
| CN102118179A (en) * | 2011-04-22 | 2011-07-06 | 上海迦美信芯通讯技术有限公司 | RF transceiver circuit system |
| US8742851B2 (en) * | 2012-05-31 | 2014-06-03 | The Regents Of The University Of California | CMOS linear differential distributed amplifier and distributed active balun |
| EP2928074B1 (en) * | 2012-12-03 | 2021-03-10 | Mitsubishi Electric Corporation | Broadband amplifier |
| US9048789B2 (en) * | 2013-03-12 | 2015-06-02 | Intel Mobile Communications GmbH | Current re-using wideband low-noise active balun |
| CN104242875B (en) * | 2013-06-19 | 2017-07-04 | 成都振芯科技股份有限公司 | Single turn of double dutycycle conditioned circuit |
| JP2015115654A (en) * | 2013-12-09 | 2015-06-22 | 株式会社東芝 | Single-phase-to-differential conversion circuit and analog front end circuit |
| EP3258597B1 (en) * | 2016-06-13 | 2020-07-29 | Intel IP Corporation | Amplification circuit, apparatus for amplifying, low noise amplifier, radio receiver, mobile terminal, base station, and method for amplifying |
| CN110518882B (en) * | 2018-05-21 | 2023-08-18 | 矽统科技股份有限公司 | Configurable amplifier module |
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| US20020175763A1 (en) * | 2001-03-30 | 2002-11-28 | Institute Of Microelectronics And Oki Techno Centre (Singapore) Pte. Ltd. | Wide-band single-ended to differential converter in CMOS technology |
| US6922108B2 (en) * | 2001-06-08 | 2005-07-26 | Lucent Technologies Inc. | Active balun circuit for single-ended to differential RF signal conversion with enhanced common-mode rejection |
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| JP2003298355A (en) * | 2002-03-29 | 2003-10-17 | Kawasaki Microelectronics Kk | Mixer and differential amplifier |
| JP2004304330A (en) * | 2003-03-28 | 2004-10-28 | Nec Electronics Corp | Frequency characteristics-variable amplifier circuit and semiconductor integrated circuit device |
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| US6922108B2 (en) * | 2001-06-08 | 2005-07-26 | Lucent Technologies Inc. | Active balun circuit for single-ended to differential RF signal conversion with enhanced common-mode rejection |
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