JP2007228094A - Amplifier - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inhibit the lowering of a gain due to the parasitic inductance component of an amplifier. <P>SOLUTION: The amplifier 1 includes matching circuits 11 to 13, a capacitor C1, the capacitor C2, inductors L1 to L4, a high-frequency transistor TR1 and the high-frequency transistor TR2, and terminals PAD1 to PAD6. The capacitor C1 is fitted between an emitter for the high-frequency transistor TR1 and the terminal PAD3, the inductor L1 is fitted between the terminal PAD3 and a low-potential side power supply Vss, and the inductor L2 is fitted between the terminal PAD4 and the low-potential side power supply Vss. The capacitor C2 is mounted between the emitter for the high-frequency transistor TR2 and the terminal PAD5, the inductor L3 is mounted between the terminal PAD5 and the low-potential side power supply Vss, and the inductor L4 is mounted between the terminal PAD6 and the low-potential side power supply Vss. The inductors Ll to L4 are composed of bonding wires. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an amplifier used in a microwave band, a quasi-microwave band, and the like.

  Various amplifiers are used in mobile devices such as mobile phones and PDAs (Personal Digital Assistance) used in frequency bands such as L band and S band. The amplifier usually uses a bipolar transistor or FET (Field Effect Transistor) having excellent high-frequency characteristics, and is composed of a single stage or a plurality of stages (see, for example, Patent Document 1).

In a high-frequency power amplifier described in Patent Document 1 and the like, an emitter electrode of a high-frequency transistor and a low-potential side power source as a ground electrode formed on a circuit board are electrically connected by a bonding wire. In high frequency bands such as the L band and the S band, this bonding wire has a problem of reducing the gain of the amplifier as a parasitic inductance component.
JP 2001-237647 A

  An object of the present invention is to provide an amplifier that can suppress a decrease in gain due to a parasitic inductance component.

  An amplifier according to one embodiment of the present invention includes a transistor in which an RF signal is input to a control electrode and an amplified signal is output from the first electrode on the high-potential-side power supply side, and one end connected to the second electrode of the transistor A capacitor, one end of which is connected to the other end of the capacitor via a first terminal, the other end of which is connected to a low-potential side power source, and one end of which is connected to the low potential side power source. And a second inductor connected between the second electrode and the capacitor and having the other end connected to the low-potential-side power source.

  An amplifier according to another aspect of the present invention includes a first transistor that receives an RF input signal at a control electrode and outputs an amplified signal from a first electrode on a high-potential-side power supply side, and one end of the first transistor. A first capacitor connected to the second electrode, a first end connected to the other end of the first capacitor via a first terminal, and a second end connected to the low potential side power source. An inductor having one end connected between the second electrode of the first transistor and the first capacitor via a second terminal and the other end connected to the low-potential-side power source A signal output from the first transistor is input to the control electrode, a second transistor that outputs an amplified signal from the first electrode on the high-potential-side power supply side as an RF output signal, and one end of Second of the second transistor A second capacitor connected to the pole; a third inductor having one end connected to the other end of the second capacitor via a third terminal and the other end connected to the low-potential side power supply; A fourth inductor having one end connected between the second electrode of the second transistor and the second capacitor via a fourth terminal and the other end connected to the low-potential-side power supply; It is characterized by doing.

  ADVANTAGE OF THE INVENTION According to this invention, the amplifier which can suppress the gain fall by a parasitic inductance component can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, an amplifier according to Embodiment 1 of the present invention will be described with reference to the drawings. FIG. 1 is a circuit diagram showing an amplifier. In this embodiment, an HBT (Heterojunction Bipolar Transistor) having excellent high frequency characteristics is used for the amplifier.

  As shown in FIG. 1, the amplifier 1 is provided with matching circuits 11 to 13, a capacitor C1, a capacitor C2, inductors L1 to L4, a high frequency transistor TR1, a high frequency transistor TR2, and terminals PAD1 to PAD6. Operates as a high frequency power amplifier. Here, as the high-frequency transistors TR1 and TR2, GaAs HBTs composed of NPN transistors having excellent ft (cutoff frequency) and fmax (maximum operating frequency) are used.

The matching circuit 11 as an input matching circuit includes, for example, a coupling capacitor (not shown), an inductor as a transmission line, a resistor, a decoupling capacitor, and the like, and includes a high potential power source Vcc and a low potential power source Vss as a ground potential. The high frequency input signal RFin output from the terminal PAD1 is input, and a signal whose impedance is matched to the fundamental frequency (f ₀ ) of the high frequency signal is output. A bias current is supplied to the base (control electrode) of the high-frequency transistor TR1 in the input stage. The low potential side power source Vss is connected to a ground electrode of a circuit board of the amplifier 1 (not shown).

  The high-frequency transistor TR1 is disposed between the matching circuit 11 and the matching circuit 12 serving as an interstage matching circuit. The high-frequency transistor TR1 inputs a signal output from the matching circuit 11 based on the amplified signal from a collector (first electrode). Output.

  The capacitor C1 is provided between the emitter (second electrode) of the high-frequency transistor TR1 and the terminal PAD3, and functions as a grounding capacitor. The terminal PAD3 is provided between the capacitor C1 and the inductor L1. The inductor L1 is composed of a bonding wire provided between the terminal PAD3 and the low potential side power source Vss. The terminal PAD4 is provided between the emitter of the high frequency transistor TR1 and the inductor L2. The inductor L2 is composed of a bonding wire provided between the terminal PAD4 and the low potential power source Vss.

  The matching circuit 12 is disposed between the high-frequency transistor TR1 and the high-frequency transistor TR2, and includes, for example, a coupling capacitor (not shown), an inductor as a transmission line, a resistor, a decoupling capacitor, and the like. A high-frequency signal is provided between the low-potential-side power source Vss as a potential and output from the collector of the high-frequency transistor TR2, and an impedance-matched signal is output. Then, a bias current is supplied to the base of the high-frequency transistor TR2.

  The high-frequency transistor TR2 is disposed between the matching circuit 12 and the matching circuit 13 serving as an output matching circuit. The high-frequency transistor TR2 inputs a signal output from the matching circuit 12 to the base (control electrode) and collects the amplified signal as a collector (first output). Output from the electrode).

  The capacitor C2 is provided between the emitter (second electrode) of the high-frequency transistor TR2 and the terminal PAD5 and functions as a grounding capacitor. The terminal PAD5 is provided between the capacitor C2 and the inductor L3. The inductor L3 is composed of a bonding wire provided between the terminal PAD5 and the low potential power source Vss. The terminal PAD6 is provided between the emitter of the high frequency transistor TR2 and the inductor L4. The inductor L4 is composed of a bonding wire provided between the terminal PAD6 and the low potential side power source Vss.

  Here, the inductor L2 causes a direct current to flow from the emitter of the high frequency transistor TR1 to the low potential side power source Vss, and the inductor L4 serves to cause a direct current to flow from the emitter of the high frequency transistor TR2 to the low potential side power source Vss. Capacitors C1 and C2 are composed of, for example, MIM (Metal Insulator Metal) capacitors formed on the field. For example, a P-SiN (plasma silicon nitride) film is used as a capacitor insulating film constituting the MIM capacitors. ing. For the inductors L1 to L4, gold (Au) wires are used, but for example, aluminum (Al) wires may be used.

  The matching circuit 13 includes, for example, a coupling capacitor (not shown), an inductor as a transmission line, a resistor, a decoupling capacitor, and the like, and is provided between the high potential side power source Vcc and the low potential side power source Vss as the ground potential. The high frequency signal output from the high frequency transistor TR2 is input, and the high frequency output signal RFout having the desired output characteristics impedance-matched is output from the terminal PAD2. The matching circuits 11 to 13 are connected to the same high potential power source Vcc, but may be connected to high potential power sources that supply different voltages.

Here, the capacitor C1, the capacitor C2, and the inductors L1 to L4 are provided in order to suppress a decrease in gain at the fundamental frequency (f ₀ ) of the high-frequency signal of the amplifier 1. For example, the capacitors C1 and C2 , The inductance value of the inductors L1 and L3 is Lrf, the inductance value of the inductors L2 and L4 is Ldc,
fo = 1 / {2 × π × (Crf × Lrf) ^1/2 } (1)
1 / 2fo = 2 × π × {Crf × (Lrf + Ldc)} ^1/2・ ・ ・ ・ ・ ・ Equation (2)
Crf, Lrf, and Ldc are set so as to satisfy the above. 1 / 2fo is 1/2 of the fundamental frequency (f ₀ ) of the high-frequency signal.

  Next, gain characteristics with respect to the frequency of the amplifier under the conditions satisfying the expressions (1) and (2) will be described with reference to the drawings. FIG. 2 is a diagram showing the relationship of the gain with respect to the frequency of the amplifier of the present embodiment, the solid line (a) in the diagram shows the relationship between the frequency and the gain of the present embodiment, and the broken line (b) in FIG. FIG. 3 shows the relationship between the frequency and the gain when there is no parasitic inductance component, FIG. 3 is a diagram showing the relationship between the gain and the frequency of the conventional amplifier, and the solid line (a) in the diagram shows the relationship between the conventional frequency and the gain. The broken line (b) in the middle shows the relationship between the frequency and gain when there is no parasitic inductance component such as a bonding wire. Here, in the conventional amplifier, the capacitors C1 and C2 and the inductors L2 and L4 are not provided.

As shown in FIG. 2, in this embodiment, the gain at the fundamental frequency (f ₀ ) of the high frequency signal of the amplifier 1 is substantially the same as the gain when there is no parasitic inductance component such as a bonding wire. Further, the gain at 1/2 fo is greatly reduced as compared with the gain when there is no parasitic inductance component such as a bonding wire.

This is because the capacitor C1 and the inductor L1, and the capacitor C2 and the inductor L3 are short-circuited at high frequency due to series resonance at the fundamental frequency (f ₀ ), respectively, and the emitters of the high-frequency transistors TR1 and TR2 are ideally grounded. Because. In addition, since the inductors L2 and L4 pass a direct current to the low potential side power source Vss, the inductor L2 and the capacitor C1, and the inductor L4 and the capacitor C2 respectively resonate in parallel, thereby increasing the gain at 1 / 2fo of the amplifier 1. Can be reduced. As a result, it is possible to suppress the oscillation phenomenon during the non-linear operation of the high-frequency transistors TR1 and TR2.

On the other hand, as shown in FIG. 3, in the conventional case (without the capacitors C1 and C2 and the inductors L2 and L4), the gain at the fundamental frequency (f ₀ ) of the high frequency signal of the amplifier 1 due to the parasitic inductance components of the inductors L1 and L3. Is significantly lower than the gain when there is no parasitic inductance component such as a bonding wire.

Here, as a specific example in which the fundamental frequency (f ₀ ) of the high-frequency signal of the amplifier 1 is 2 GHz, for example, CrPF is 0.5 PF, and Lrf and Ldc are 0.1 nH. In this case, if the thickness of the P-SiN film as the insulating film of the MIM capacitor constituting the capacitors C1 and C2 is 100 nm, for example, the areas of the capacitors C1 and C2 are 37 μm × 37 μm, and the semiconductor integrated circuit It can be seen that the size of the terminal normally used (also called bonding pad) is smaller. Further, for example, when a bonding wire having a value of 1 nH per 1 mm is used, the wire length of the inductors L1 to L4 composed of the bonding wire is approximately 100 μm, and is within the wire bonding conditions normally used in semiconductor integrated circuits. It becomes possible to subdue. That is, even if the capacitors C1 and C2 and the inductors L1 to L4 are provided, an increase in the chip area and mounting area of the amplifier 1 can be suppressed.

Here, in order to increase the gain of the amplifier 1, a two-stage configuration is used. Further, the capacitor and the inductor are provided between the emitter of the high-frequency transistor at each stage and the low-potential-side power supply Vss, respectively. The basic frequency (f ₀ ) when there is no parasitic inductance component such as a bonding wire at each stage. This is to make it equal to the gain at. When a capacitor and an inductor are provided between the emitter of the high-frequency transistor and the low-potential-side power supply Vss only in the first stage or the second stage, the gain at the fundamental frequency (f ₀ ) when there is no parasitic inductance component such as a bonding wire It cannot be made equal, and it is difficult to maximize the gain. Even when the amplifier has a three-stage configuration, it is necessary to provide a capacitor and an inductor between the emitter of a particularly high-frequency transistor and the low-potential-side power supply Vss. In the case of the three-stage configuration, the gain increases compared to the case of the two-stage configuration, but the phase margin is lower than that of the two-stage configuration. In order to further increase the gain of the amplifier, for example, when a four-stage configuration or more is used, the phase margin becomes extremely small and oscillation is likely to occur.

  When the frequency band increases from Equation (1), it is necessary to increase Crf and Lrf. In this case, the area of the MIM capacitor increases, the bonding wire becomes longer, and the chip area and mounting area of the amplifier 1 increase. . On the other hand, when the frequency band is lowered, Crf and Lrf must be reduced. In this case, the area of the MIM capacitor is reduced and the difference from the parasitic capacitance is reduced. Further, the bonding wire is shortened, and the difference from the parasitic inductance component other than the bonding wire is reduced. For this reason, it turns out that it is suitable for amplifiers, such as a 0.5-1.5 GHz L band and a S band of 2-4 GHz (in other words, a quasi-microwave band and a microwave band).

  As described above, the amplifier of this embodiment includes the matching circuits 11 to 13, the capacitor C1, the capacitor C2, the inductors L1 to L4, the high frequency transistor TR1, the high frequency transistor TR2, and the terminals PAD1 to PAD6. The capacitor C1 is provided between the emitter of the high-frequency transistor TR1 and the terminal PAD3, the inductor L1 is provided between the terminal PAD3 and the low potential side power supply Vss, and the inductor L2 is provided between the terminal PAD4 and the low potential side power supply Vss. The capacitor C2 is provided between the emitter of the high frequency transistor TR2 and the terminal PAD5, the inductor L3 is provided between the terminal PAD5 and the low potential side power supply Vss, and the inductor L4 is connected to the terminal PAD6 and the low potential side power supply Vss. It is provided in between. The inductors L1 to L4 are composed of bonding wires.

Then, the capacitor C1 and the inductor L1, and the capacitor C2 and the inductor L3 are short-circuited in high frequency due to series resonance at the fundamental frequency (f ₀ ), respectively, and the emitters of the high-frequency transistors TR1 and TR2 are ideally grounded. In addition, since the inductors L2 and L4 pass a direct current to the low potential side power source Vss, the inductor L2 and the capacitor C1, and the inductor L4 and the capacitor C2 respectively resonate in parallel, thereby increasing the gain at 1 / 2fo of the amplifier 1. Decrease.

For this reason, it is possible to suppress a decrease in gain at the fundamental frequency (f ₀ ), and it is possible to suppress an oscillation phenomenon during the nonlinear operation of the high-frequency transistors TR1 and TR2. In the L band, the S band, and the like, the capacitance values of the capacitors C1 and C2 and the inductance values of the inductors L1 to L4 can be made relatively small. Therefore, a low-cost monolithic amplifier without spurious emission due to oscillation or the like can be realized.

  In this embodiment, GaAs-based HBT is used, but Si-based SiGe HBT or SiGeC HBT having excellent ft and fmax may be used. A high frequency Si bipolar transistor may be used. Further, although Lrf and Ldc are set to the same value, they are not necessarily set to the same value.

  Next, an amplifier according to Embodiment 2 of the present invention will be described with reference to the drawings. FIG. 4 is a circuit diagram showing the amplifier. In this embodiment, the number of inductors for suppressing the gain reduction is changed.

  In the following, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted, and only different portions are described.

  As shown in FIG. 4, the amplifier 1a includes matching circuits 11 to 13, a capacitor C1, a capacitor C2, inductors L1a to L1c, inductors L2a to L2c, inductors L3a to L3c, inductors L4a to L4c, a high frequency transistor TR1, and a high frequency transistor. TR2 and terminals PAD1 to PAD6 are provided and operate as a two-stage high-frequency power amplifier.

  The inductors L1a to L1c are configured by bonding wires connected in parallel between the terminal PAD3 and the low potential side power supply Vss, and the inductors L2a to L2c are bonding wires connected in parallel between the terminal PAD4 and the low potential side power supply Vss. The inductors L3a to L3c are composed of bonding wires connected in parallel between the terminal PAD5 and the low potential power source Vss, and the inductors L4a to L4c are connected in parallel between the terminal PAD6 and the low potential power source Vss. The bonding wire is made up of. When three inductors are arranged in parallel, the variation in inductance value can be reduced as compared with the single arrangement, and a low inductance value can be realized with high accuracy.

  Here, although the inductors L1a to L1c, the inductors L2a to L2c, the inductors L3a to L3c, and the inductors L4a to L4c are made of gold (Au) wires, for example, aluminum (Al) wires may be used. .

  As described above, in the amplifier of this embodiment, the matching circuits 11 to 13, the capacitor C1, the capacitor C2, the inductors L1a to L1c, the inductors L2a to L2c, the inductors L3a to L3c, the inductors L4a to L4c, the high frequency transistor TR1, and the high frequency transistor TR2 and terminals PAD1 to PAD6 are provided. The capacitor C1 is provided between the emitter of the high-frequency transistor TR1 and the terminal PAD3, the inductors L1a to L1c are arranged in parallel between the terminal PAD3 and the low potential side power supply Vss, and the inductors L2a to L2c are connected to the terminal PAD4 and the low potential side power supply. They are arranged in parallel between Vss. The capacitor C2 is provided between the emitter of the high-frequency transistor TR2 and the terminal PAD5, the inductors L3a to L3c are arranged in parallel between the terminal PAD5 and the low potential side power supply Vss, and the inductors L4a to L4c are connected to the terminal PAD6 and the low potential side. The power supply Vss is arranged in parallel. The inductors L1a to L1c, the inductors L2a to L2c, the inductors L3a to L3c, and the inductors L4a to L4c are composed of bonding wires.

The capacitor C1 and the inductors L1a to L1c arranged in parallel and the capacitor C2 and the inductors L3a to L3c arranged in parallel are short-circuited at high frequency due to series resonance at the fundamental frequency (f ₀ ), respectively, and the high-frequency transistors TR1 and TR2 The emitter is an ideal emitter ground. Further, since the inductors L2a to L2c and the inductors L4a to L4c pass a direct current to the low potential side power supply Vss, respectively, the inductors L2a to L2c and the capacitor C1 arranged in parallel, and the inductors L4a to L4c and the capacitor C2 arranged in parallel, Respectively resonate in parallel and greatly reduce the gain of the amplifier 1 at 1/2 fo.

For this reason, it is possible to suppress a decrease in gain at the fundamental frequency (f ₀ ), and it is possible to suppress an oscillation phenomenon during the nonlinear operation of the high-frequency transistors TR1 and TR2. In the L band, the S band, and the like, the capacitance values of the capacitors C1 and C2 and the inductance values of the inductors L1a to L1c, the inductors L2a to L2c, the inductors L3a to L3c, and the inductors L4a to L4c can be made relatively small. Therefore, a low-cost monolithic amplifier without spurious emission due to oscillation or the like can be realized.

  In this embodiment, three inductors are arranged in parallel, but two or four or more inductors may be arranged in parallel.

  Next, an amplifier according to Embodiment 3 of the present invention will be described with reference to the drawings. FIG. 5 is a circuit diagram showing an amplifier. In this embodiment, a HEMT (High Electron Mobility Transistor) having excellent high frequency characteristics is used for the amplifier.

  As shown in FIG. 5, the amplifier 1b is provided with a matching circuit 11a, a matching circuit 12a, a capacitor C1, an inductor L1, an inductor L2, a high-frequency transistor TR11, and terminals PAD1 to PAD4, and a single-stage high-frequency power amplifier. Works as.

The matching circuit 11a as an input matching circuit is composed of, for example, a coupling capacitor (not shown), an inductor as a transmission line, a resistor, a decoupling capacitor, and the like, and is connected to a low potential side power source Vss as a ground potential, and is connected to a terminal PAD1. The high-frequency input signal RFin output from is input, and a signal whose impedance is matched to the fundamental frequency (f ₀ ) of the high-frequency signal is output. The DC bias voltage Vg output from the terminal PAD11 is input to the gate (control electrode) of the high-frequency transistor TR11 through the matching circuit 11a. The low potential side power source Vss is connected to a ground electrode of a circuit board of the amplifier 1b (not shown).

  The high-frequency transistor TR11 is disposed between the matching circuit 11a and the matching circuit 12a serving as an output matching circuit, inputs a signal output from the matching circuit 11a to the gate, and outputs an amplified signal from the drain (first electrode). To do. The capacitor C1 is provided between the source (second electrode) of the high-frequency transistor TR11 and the terminal PAD3, and functions as a grounding capacitor.

  The matching circuit 12a includes, for example, a coupling capacitor (not shown), an inductor as a transmission line, a resistor, a decoupling capacitor, and the like, and is provided between the high potential power source Vdd and the low potential power source Vss as the ground potential. The high frequency signal output from the high frequency transistor TR11 is input, and the high frequency output signal RFout having the desired output characteristics impedance-matched is output from the terminal PAD2.

  As described above, the amplifier of this embodiment includes the matching circuit 11a, the matching circuit 12a, the capacitor C1, the inductor L1, the inductor L2, the high-frequency transistor TR11, and the terminals PAD1 to PAD4. The capacitor C1 is provided between the source of the high-frequency transistor TR11 and the terminal PAD3, the inductor L1 is provided between the terminal PAD3 and the low potential side power supply Vss, and the inductor L2 is provided between the terminal PAD4 and the low potential side power supply Vss. It has been. The inductors L1 and L2 are composed of bonding wires.

The capacitor C1 and the inductor L1 are short-circuited at a high frequency due to series resonance at the fundamental frequency (f ₀ ), and the source of the high-frequency transistor TR11 is an ideal source ground. Further, since the inductors L2 and L4 pass a direct current to the low potential side power supply Vss, the inductor L2 and the capacitor C1 resonate in parallel, and the gain at 1/2 fo of the amplifier 1 is greatly reduced.

For this reason, it is possible to suppress a decrease in gain at the fundamental frequency (f ₀ ), and it is possible to suppress an oscillation phenomenon during the nonlinear operation of the high-frequency transistor TR11. In the L band, the S band, etc., the capacitance value of the capacitor C1 and the inductance values of the inductors L1 and L2 can be made relatively small. Therefore, a low-cost monolithic amplifier without spurious emission due to oscillation or the like can be realized.

  The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the invention.

  For example, although the HEMT is used in the third embodiment, an SOI (operating in a quasi-microwave band or a microwave band (an L band of 0.5 to 1.5 GHz or an S band of 2 to 4 GHz is more preferable) ( MISFET (Metal Insulator Semiconductor Field Effect Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), Static Induction Transistor (SIT Static Induction Transistor), or GaAs MESFET (Metal Semiconductor Field Effect) formed on Silicon on Insulator A high frequency transistor such as a transistor) may be used.

The present invention can be configured as described in the following supplementary notes.
(Supplementary note 1) An RF signal is input to the gate, and a transistor that outputs an amplified signal from the drain on the high potential side power supply side, a capacitor having one end connected to the source of the transistor, and one end having the first terminal A first inductor connected to the other end of the capacitor via the other end, and the other end connected to the low-potential-side power source, and one end connected between the source of the transistor and the capacitor via a second terminal, An amplifier comprising: a second inductor having the other end connected to the low potential side power source.

(Supplementary Note 2) A first transistor that inputs an RF input signal to the base and outputs an amplified signal from the collector on the high-potential side power supply side, and a first transistor whose one end is connected to the emitter of the first transistor A capacitor, one end connected to the other end of the capacitor via a first terminal, the other end connected to a low-potential side power supply, and one end connected to the first terminal via a second terminal A second inductor connected between the emitter of the transistor and the first capacitor, the other end of which is connected to the low-potential side power supply, and a signal output from the first transistor is input to the base; A second transistor for outputting an amplified signal from the collector on the high-potential-side power supply side as an RF output signal; a second capacitor having one end connected to the emitter of the second transistor; One end is connected to the other end of the second capacitor via a third terminal, the other end is connected to the low potential side power source, and one end is connected to the second terminal via the fourth terminal. An amplifier comprising: a fourth inductor connected between the emitter of the second transistor and the second capacitor and having the other end connected to the low potential side power source.

(Additional remark 3) The said capacitor | condenser is an amplifier of Additional remark 1 or 2 comprised from the MIM capacitor which is formed on a field and used the plasma silicon nitride film for the capacitor insulating film.

(Additional remark 4) The said inductor is an amplifier in any one of additional remark 1 thru | or 3 comprised from a bonding wire.

(Supplementary note 5) The amplifier according to any one of supplementary notes 1 to 4, wherein a plurality of the inductors are arranged in parallel.

(Supplementary note 6) The amplifier according to any one of supplementary notes 1 to 5, wherein the fundamental frequency (f ₀ ) is in an L band or an S band.

1 is a circuit diagram showing an amplifier according to Embodiment 1 of the present invention. The figure which shows the relationship of the gain with respect to the frequency of the amplifier which concerns on Example 1 of this invention. The figure which shows the relationship of the gain with respect to the frequency of the conventional amplifier which concerns on Example 1 of this invention. FIG. 5 is a circuit diagram showing an amplifier according to Embodiment 2 of the present invention. FIG. 6 is a circuit diagram showing an amplifier according to Embodiment 3 of the present invention.

Explanation of symbols

1, 1a, 1b Amplifier 11, 11a, 12, 12a, 13 Matching circuit C1, C2 Capacitors L1-L4, L1a-L1c, L2a-L2c, L3a-L3c, L4a-L4c Inductor RFin High-frequency input signal RFout High-frequency output signal PAD1 ~ PAD6, PAD11 Terminals TR1, TR2, TR11 High-frequency transistors Vcc, Vdd High-potential side power supply Vg DC bias voltage Vss Low-potential side power supply

Claims (5)

A transistor for inputting an RF signal to the control electrode and outputting an amplified signal from the first electrode on the high potential side power supply side;
A capacitor having one end connected to the second electrode of the transistor;
A first inductor having one end connected to the other end of the capacitor via a first terminal and the other end connected to a low-potential-side power supply;
A second inductor having one end connected between the second electrode and the capacitor via a second terminal and the other end connected to the low-potential-side power source;
An amplifier comprising: A first transistor that inputs an RF input signal to the control electrode and outputs an amplified signal from the first electrode on the high-potential-side power supply side;
A first capacitor having one end connected to the second electrode of the first transistor;
A first inductor having one end connected to the other end of the first capacitor via a first terminal and the other end connected to a low-potential-side power supply;
A second inductor having one end connected between the second electrode of the first transistor and the first capacitor via a second terminal and the other end connected to the low-potential-side power supply;
A second transistor for inputting a signal output from the first transistor to the control electrode and outputting an amplified signal from the first electrode on the high-potential-side power supply side as an RF output signal;
A second capacitor having one end connected to the second electrode of the second transistor;
A third inductor having one end connected to the other end of the second capacitor via a third terminal and the other end connected to the low-potential-side power supply;
A fourth inductor having one end connected between the second electrode of the second transistor and the second capacitor via a fourth terminal and the other end connected to the low-potential-side power supply;
An amplifier comprising: A first transistor that inputs an RF input signal to the control electrode and outputs an amplified signal from the first electrode on the high-potential-side power supply side;
A first capacitor having one end connected to the second electrode of the first transistor;
A first inductor having one end connected to the other end of the first capacitor via a first terminal and the other end connected to a low-potential-side power supply;
A second inductor having one end connected between the second electrode of the first transistor and the capacitor via a second terminal and the other end connected to the low-potential-side power supply;
A second transistor that inputs a signal output from the first transistor to the control electrode and outputs an amplified signal from the first electrode on the high-potential-side power supply side;
A second capacitor having one end connected to the second electrode of the second transistor;
A third inductor having one end connected to the other end of the second capacitor via a third terminal and the other end connected to the low-potential-side power supply;
A fourth inductor having one end connected between the second electrode of the second transistor and the second capacitor via a fourth terminal and the other end connected to the low-potential-side power supply;
A third transistor that inputs a signal output from the second transistor to the control electrode and outputs an amplified signal from the first electrode on the high-potential-side power supply side as an RF output signal;
A third capacitor having one end connected to the second electrode of the third transistor;
A fifth inductor having one end connected to the other end of the third capacitor via a fifth terminal and the other end connected to the low-potential-side power source;
A sixth inductor having one end connected between the second electrode of the third transistor and the third capacitor via a sixth terminal, and the other end connected to the low-potential-side power supply;
An amplifier comprising:   The amplifier according to any one of claims 1 to 3, wherein a plurality of the inductors are arranged in parallel.   The amplifier according to claim 1, wherein the inductor is formed of a bonding wire.

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