TWI485530B - 用於微影系統的圖案數據轉換器 - Google Patents
用於微影系統的圖案數據轉換器 Download PDFInfo
- Publication number
- TWI485530B TWI485530B TW099115882A TW99115882A TWI485530B TW I485530 B TWI485530 B TW I485530B TW 099115882 A TW099115882 A TW 099115882A TW 99115882 A TW99115882 A TW 99115882A TW I485530 B TWI485530 B TW I485530B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern data
- data
- pixel
- output
- array
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims description 66
- 238000006243 chemical reaction Methods 0.000 title description 17
- 238000000034 method Methods 0.000 claims description 100
- 238000012937 correction Methods 0.000 claims description 54
- 238000013139 quantization Methods 0.000 claims description 48
- 238000012545 processing Methods 0.000 claims description 34
- 238000003860 storage Methods 0.000 claims description 30
- 238000012952 Resampling Methods 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 25
- 238000007781 pre-processing Methods 0.000 claims description 15
- 230000000694 effects Effects 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 2
- 230000001131 transforming effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 106
- 230000008569 process Effects 0.000 description 29
- 238000010586 diagram Methods 0.000 description 16
- 238000013461 design Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000009877 rendering Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000011002 quantification Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17976509P | 2009-05-20 | 2009-05-20 | |
| US17976009P | 2009-05-20 | 2009-05-20 | |
| US25712209P | 2009-11-02 | 2009-11-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201107897A TW201107897A (en) | 2011-03-01 |
| TWI485530B true TWI485530B (zh) | 2015-05-21 |
Family
ID=43126596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099115882A TWI485530B (zh) | 2009-05-20 | 2010-05-19 | 用於微影系統的圖案數據轉換器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8710465B2 (enExample) |
| EP (1) | EP2443647B1 (enExample) |
| JP (1) | JP5801289B2 (enExample) |
| KR (1) | KR101614460B1 (enExample) |
| CN (1) | CN102460633B (enExample) |
| TW (1) | TWI485530B (enExample) |
| WO (1) | WO2010134018A2 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101077098B1 (ko) * | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| EP2433295A2 (en) * | 2009-05-20 | 2012-03-28 | Mapper Lithography IP B.V. | Dual pass scanning |
| JP5801288B2 (ja) * | 2009-05-20 | 2015-10-28 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | リソグラフ処理のための2レベルパターンを発生する方法およびその方法を使用するパターン発生器 |
| KR101474894B1 (ko) * | 2010-12-20 | 2014-12-19 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치의 프로그램가능 패터닝 디바이스를 제어하는 방법, 디바이스 제조방법, 및 리소그래피 장치 |
| KR101791252B1 (ko) * | 2011-04-22 | 2017-10-27 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜 |
| CN103608850B (zh) * | 2011-06-23 | 2017-05-10 | 英特尔公司 | 带选择性剔除的随机光栅化 |
| JP5836773B2 (ja) | 2011-11-25 | 2015-12-24 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| JP5886979B2 (ja) * | 2011-11-29 | 2016-03-16 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置用の所望のデバイスパターンのベクタ形式表現を変換する装置および方法、プログラマブルパターニングデバイスにデータを供給する装置および方法、リソグラフィ装置、デバイス製造方法 |
| NL2009817A (en) * | 2011-12-06 | 2013-06-10 | Asml Netherlands Bv | A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program. |
| CN104040434B (zh) * | 2012-01-12 | 2016-10-19 | Asml荷兰有限公司 | 光刻装置、用于提供设置点数据的装置、设备制造方法、用于提供设置点数据的方法 |
| US8893059B2 (en) | 2012-02-06 | 2014-11-18 | Kla-Tencor Corporation | Pattern data system for high-performance maskless electron beam lithography |
| JP6128744B2 (ja) * | 2012-04-04 | 2017-05-17 | キヤノン株式会社 | 描画装置、描画方法、および、物品の製造方法 |
| FR2994749B1 (fr) * | 2012-08-24 | 2015-07-24 | Commissariat Energie Atomique | Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants. |
| JP2014049467A (ja) * | 2012-08-29 | 2014-03-17 | Canon Inc | 描画装置、それを用いた物品の製造方法 |
| US9245714B2 (en) | 2012-10-01 | 2016-01-26 | Kla-Tencor Corporation | System and method for compressed data transmission in a maskless lithography system |
| CN102956420B (zh) * | 2012-10-30 | 2016-11-16 | 中国科学院上海应用物理研究所 | 电子射线源产生装置及产生低剂量率电子射线的方法 |
| JP6215586B2 (ja) * | 2012-11-02 | 2017-10-18 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置 |
| JP2014110307A (ja) * | 2012-11-30 | 2014-06-12 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP2014204012A (ja) * | 2013-04-05 | 2014-10-27 | キヤノン株式会社 | 描画装置、及び物品の製造方法 |
| CN105659166B (zh) * | 2013-10-22 | 2019-01-29 | 应用材料公司 | 用于基于网的处理的无掩模平版印刷 |
| US9460260B2 (en) * | 2014-02-21 | 2016-10-04 | Mapper Lithography Ip B.V. | Enhanced stitching by overlap dose and feature reduction |
| EP2950325B1 (en) * | 2014-05-30 | 2018-11-28 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using overlapping exposure spots |
| US20150372096A1 (en) * | 2014-06-20 | 2015-12-24 | Ishiang Shih | High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications |
| KR20160049171A (ko) | 2014-10-24 | 2016-05-09 | 삼성디스플레이 주식회사 | 마스크리스 노광 장치, 마스크리스 노광 방법 및 이에 의해 제조되는 표시 기판 |
| KR102418581B1 (ko) * | 2015-10-21 | 2022-07-08 | 삼성전자주식회사 | 패턴 생성 방법 및 이를 수행하기 위한 패턴 발생기 |
| US10460071B2 (en) * | 2015-11-04 | 2019-10-29 | D2S, Inc. | Shaped beam lithography including temperature effects |
| US9852876B2 (en) | 2016-02-08 | 2017-12-26 | Nuflare Technology, Inc. | Multi charged particle beam writing apparatus and multi charged particle beam writing method |
| NL2019502B1 (en) * | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| KR102481733B1 (ko) * | 2016-09-08 | 2022-12-29 | 에이에스엠엘 네델란즈 비.브이. | 하전-입자 멀티-빔렛 리소그래피 시스템을 이용한 고유한 칩들의 제작 |
| US20180068047A1 (en) | 2016-09-08 | 2018-03-08 | Mapper Lithography Ip B.V. | Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system |
| CN106444307B (zh) * | 2016-09-30 | 2017-11-21 | 西安立芯光电科技有限公司 | 一种用于激光芯片制造中平边补偿对准的光刻方法 |
| EP3355337B8 (en) * | 2017-01-27 | 2024-04-10 | IMS Nanofabrication GmbH | Advanced dose-level quantization for multibeam-writers |
| KR102415583B1 (ko) | 2017-06-30 | 2022-07-04 | 삼성전자주식회사 | Opc 모델의 최적화 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| JP7126367B2 (ja) | 2018-03-29 | 2022-08-26 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US10483080B1 (en) * | 2018-07-17 | 2019-11-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US10593509B2 (en) | 2018-07-17 | 2020-03-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| KR20210099516A (ko) | 2020-02-03 | 2021-08-12 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티―빔 라이터의 블러 변화 보정 |
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| EP4095882A1 (en) * | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US12500060B2 (en) | 2021-07-14 | 2025-12-16 | Ims Nanofabrication Gmbh | Electromagnetic lens |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
| US20240210837A1 (en) * | 2022-12-22 | 2024-06-27 | The Hong Kong Polytechnic University | Digital ultraviolet lithography method and apparatus |
| CN115857286A (zh) * | 2023-01-10 | 2023-03-28 | 广州粤芯半导体技术有限公司 | 一种曝光方法、装置及电子设备 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363213A (en) * | 1992-06-08 | 1994-11-08 | Xerox Corporation | Unquantized resolution conversion of bitmap images using error diffusion |
| US20030218780A1 (en) * | 2002-05-24 | 2003-11-27 | Eastman Kodak Company | Halftone dot-growth technique using a dot edge-detection scheme |
| US7064869B2 (en) * | 2001-06-22 | 2006-06-20 | Eastman Kodak Company | Method for halftoning a multi-channel digital color image having at least one group of similar color channels |
| US20060291720A1 (en) * | 2005-06-23 | 2006-12-28 | Microsoft Corporation | Optimized color image encoding and decoding using color space parameter data |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3157308A (en) | 1961-09-05 | 1964-11-17 | Clark Mfg Co J L | Canister type container and method of making the same |
| US3159408A (en) | 1961-10-05 | 1964-12-01 | Grace W R & Co | Chuck |
| US4524308A (en) | 1984-06-01 | 1985-06-18 | Sony Corporation | Circuits for accomplishing electron beam convergence in color cathode ray tubes |
| WO1994025880A1 (en) | 1993-04-30 | 1994-11-10 | Board Of Regents, The University Of Texas System | Megavoltage scanning imager and method for its use |
| EP0766405A1 (en) | 1995-09-29 | 1997-04-02 | STMicroelectronics S.r.l. | Successive approximation register without redundancy |
| US5847959A (en) * | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
| US6556702B1 (en) * | 1999-01-06 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus that determines charged particle beam shape codes |
| US20020104970A1 (en) | 1999-01-06 | 2002-08-08 | Winter Stacey J. | Raster shaped beam, electron beam exposure strategy using a two dimensional multipixel flash field |
| US7095484B1 (en) * | 2001-06-27 | 2006-08-22 | University Of South Florida | Method and apparatus for maskless photolithography |
| WO2003040829A2 (en) * | 2001-11-07 | 2003-05-15 | Applied Materials, Inc. | Maskless printer using photoelectric conversion of a light beam array |
| SE0104238D0 (sv) * | 2001-12-14 | 2001-12-14 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
| US6768125B2 (en) * | 2002-01-17 | 2004-07-27 | Ims Nanofabrication, Gmbh | Maskless particle-beam system for exposing a pattern on a substrate |
| EP2302460A3 (en) | 2002-10-25 | 2011-04-06 | Mapper Lithography Ip B.V. | Lithography system |
| KR101077098B1 (ko) | 2002-10-30 | 2011-10-26 | 마퍼 리쏘그라피 아이피 비.브이. | 전자 빔 노출 시스템 |
| CN1759465B (zh) | 2003-03-10 | 2010-06-16 | 迈普尔平版印刷Ip有限公司 | 用于产生多个小波束的装置 |
| EP1830384B1 (en) | 2003-05-28 | 2011-09-14 | Mapper Lithography Ip B.V. | Charged particle beamlet exposure system |
| DE602004010824T2 (de) | 2003-07-30 | 2008-12-24 | Mapper Lithography Ip B.V. | Modulator-schaltkreise |
| CN100451723C (zh) * | 2003-11-12 | 2009-01-14 | 麦克罗尼克激光系统公司 | 用于修正slm戳图像缺陷的方法和器件 |
| US7075093B2 (en) * | 2004-05-12 | 2006-07-11 | Gorski Richard M | Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation |
| US7294440B2 (en) * | 2004-07-23 | 2007-11-13 | International Business Machines Corporation | Method to selectively correct critical dimension errors in the semiconductor industry |
| US7477772B2 (en) * | 2005-05-31 | 2009-01-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression |
| US7709815B2 (en) | 2005-09-16 | 2010-05-04 | Mapper Lithography Ip B.V. | Lithography system and projection method |
| JP4745089B2 (ja) * | 2006-03-08 | 2011-08-10 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム |
| TWI432908B (zh) | 2006-03-10 | 2014-04-01 | Mapper Lithography Ip Bv | 微影系統及投射方法 |
| JP5339671B2 (ja) * | 2006-06-26 | 2013-11-13 | 株式会社オーク製作所 | 描画システム |
| US8259285B2 (en) * | 2006-12-14 | 2012-09-04 | Asml Holding N.V. | Lithographic system, device manufacturing method, setpoint data optimization method, and apparatus for producing optimized setpoint data |
| EP2250660A1 (en) | 2008-02-26 | 2010-11-17 | Mapper Lithography IP B.V. | Projection lens arrangement |
| CN102017053B (zh) | 2008-02-26 | 2014-04-02 | 迈普尔平版印刷Ip有限公司 | 投影透镜装置 |
| US8445869B2 (en) | 2008-04-15 | 2013-05-21 | Mapper Lithography Ip B.V. | Projection lens arrangement |
| US8018623B2 (en) * | 2008-02-29 | 2011-09-13 | Eastman Kodak Company | Multi-level halftoning providing reduced error diffusion artifacts |
| US8502176B2 (en) | 2008-05-23 | 2013-08-06 | Mapper Lithography Ip B.V. | Imaging system |
| CN102113083B (zh) | 2008-06-04 | 2016-04-06 | 迈普尔平版印刷Ip有限公司 | 对目标进行曝光的方法和系统 |
| JP5420670B2 (ja) | 2008-10-01 | 2014-02-19 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | 静電レンズ構造体 |
| US20100142838A1 (en) * | 2008-12-05 | 2010-06-10 | Micronic Laser Systems Ab | Gradient assisted image resampling in micro-lithographic printing |
| EP2433295A2 (en) | 2009-05-20 | 2012-03-28 | Mapper Lithography IP B.V. | Dual pass scanning |
| US9305747B2 (en) * | 2010-11-13 | 2016-04-05 | Mapper Lithography Ip B.V. | Data path for lithography apparatus |
| EP3279624B1 (en) | 2015-04-03 | 2019-08-28 | Hitachi High-Technologies Corporation | Light quantity detection device, and immunoanalysis device and charged particle beam device using same |
-
2010
- 2010-05-17 CN CN201080032976.7A patent/CN102460633B/zh active Active
- 2010-05-17 EP EP10775887.2A patent/EP2443647B1/en active Active
- 2010-05-17 JP JP2012511391A patent/JP5801289B2/ja active Active
- 2010-05-17 KR KR1020117030536A patent/KR101614460B1/ko active Active
- 2010-05-17 WO PCT/IB2010/052180 patent/WO2010134018A2/en not_active Ceased
- 2010-05-19 TW TW099115882A patent/TWI485530B/zh active
-
2011
- 2011-11-10 US US13/293,426 patent/US8710465B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5363213A (en) * | 1992-06-08 | 1994-11-08 | Xerox Corporation | Unquantized resolution conversion of bitmap images using error diffusion |
| US7064869B2 (en) * | 2001-06-22 | 2006-06-20 | Eastman Kodak Company | Method for halftoning a multi-channel digital color image having at least one group of similar color channels |
| US20030218780A1 (en) * | 2002-05-24 | 2003-11-27 | Eastman Kodak Company | Halftone dot-growth technique using a dot edge-detection scheme |
| US20060291720A1 (en) * | 2005-06-23 | 2006-12-28 | Microsoft Corporation | Optimized color image encoding and decoding using color space parameter data |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2443647B1 (en) | 2016-10-05 |
| WO2010134018A3 (en) | 2011-06-23 |
| WO2010134018A2 (en) | 2010-11-25 |
| WO2010134018A4 (en) | 2011-08-25 |
| EP2443647A2 (en) | 2012-04-25 |
| KR20120030438A (ko) | 2012-03-28 |
| TW201107897A (en) | 2011-03-01 |
| CN102460633B (zh) | 2014-12-17 |
| US8710465B2 (en) | 2014-04-29 |
| JP5801289B2 (ja) | 2015-10-28 |
| US20120286173A1 (en) | 2012-11-15 |
| JP2012527765A (ja) | 2012-11-08 |
| CN102460633A (zh) | 2012-05-16 |
| KR101614460B1 (ko) | 2016-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI485530B (zh) | 用於微影系統的圖案數據轉換器 | |
| US7842936B2 (en) | Lithography system and projection method | |
| KR101636523B1 (ko) | 듀얼 패스 스캐닝 | |
| JP5801288B2 (ja) | リソグラフ処理のための2レベルパターンを発生する方法およびその方法を使用するパターン発生器 | |
| US6841787B2 (en) | Maskless photon-electron spot-grid array printer | |
| US7842935B2 (en) | Raster frame beam system for electron beam lithography | |
| WO2012062726A1 (en) | Data path for lithography apparatus | |
| JP7781705B2 (ja) | プログラマブル直接描画装置のためのパターンデータ処理 | |
| TWI551955B (zh) | 繪畫裝置和物品的製造方法 | |
| US9001387B2 (en) | Drawing apparatus, data processing method, and method of manufacturing article that transform partially overlapping regions using different transformation rules |