JP5801289B2 - リソグラフシステムのためのパターンデータ変換 - Google Patents

リソグラフシステムのためのパターンデータ変換 Download PDF

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Publication number
JP5801289B2
JP5801289B2 JP2012511391A JP2012511391A JP5801289B2 JP 5801289 B2 JP5801289 B2 JP 5801289B2 JP 2012511391 A JP2012511391 A JP 2012511391A JP 2012511391 A JP2012511391 A JP 2012511391A JP 5801289 B2 JP5801289 B2 JP 5801289B2
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pattern data
data
pixel
output
beamlet
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Japanese (ja)
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JP2012527765A5 (enExample
JP2012527765A (ja
Inventor
ファン・デ・ペウト、テウニス
ウィーランド、マルコ・ヤン−ヤコ
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2012511391A 2009-05-20 2010-05-17 リソグラフシステムのためのパターンデータ変換 Active JP5801289B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US17976509P 2009-05-20 2009-05-20
US17976009P 2009-05-20 2009-05-20
US61/179,765 2009-05-20
US61/179,760 2009-05-20
US25712209P 2009-11-02 2009-11-02
US61/257,122 2009-11-02
PCT/IB2010/052180 WO2010134018A2 (en) 2009-05-20 2010-05-17 Pattern data conversion for lithography system

Publications (3)

Publication Number Publication Date
JP2012527765A JP2012527765A (ja) 2012-11-08
JP2012527765A5 JP2012527765A5 (enExample) 2013-07-04
JP5801289B2 true JP5801289B2 (ja) 2015-10-28

Family

ID=43126596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012511391A Active JP5801289B2 (ja) 2009-05-20 2010-05-17 リソグラフシステムのためのパターンデータ変換

Country Status (7)

Country Link
US (1) US8710465B2 (enExample)
EP (1) EP2443647B1 (enExample)
JP (1) JP5801289B2 (enExample)
KR (1) KR101614460B1 (enExample)
CN (1) CN102460633B (enExample)
TW (1) TWI485530B (enExample)
WO (1) WO2010134018A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method

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KR101791252B1 (ko) * 2011-04-22 2017-10-27 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 머신들의 클러스터를 위한 네트워크 아키텍처 및 프로토콜
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JP6215586B2 (ja) * 2012-11-02 2017-10-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
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JP2014204012A (ja) * 2013-04-05 2014-10-27 キヤノン株式会社 描画装置、及び物品の製造方法
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US9852876B2 (en) 2016-02-08 2017-12-26 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and multi charged particle beam writing method

Also Published As

Publication number Publication date
EP2443647B1 (en) 2016-10-05
WO2010134018A3 (en) 2011-06-23
WO2010134018A2 (en) 2010-11-25
WO2010134018A4 (en) 2011-08-25
EP2443647A2 (en) 2012-04-25
KR20120030438A (ko) 2012-03-28
TW201107897A (en) 2011-03-01
CN102460633B (zh) 2014-12-17
US8710465B2 (en) 2014-04-29
US20120286173A1 (en) 2012-11-15
TWI485530B (zh) 2015-05-21
JP2012527765A (ja) 2012-11-08
CN102460633A (zh) 2012-05-16
KR101614460B1 (ko) 2016-04-21

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