TWI482321B - 具有傾斜結構之發光二極體封裝之方法 - Google Patents

具有傾斜結構之發光二極體封裝之方法 Download PDF

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TWI482321B
TWI482321B TW101151144A TW101151144A TWI482321B TW I482321 B TWI482321 B TW I482321B TW 101151144 A TW101151144 A TW 101151144A TW 101151144 A TW101151144 A TW 101151144A TW I482321 B TWI482321 B TW I482321B
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substrate
emitting diode
conductive
pad
light emitting
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Wen Kun Yang
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King Dragon Internat Inc
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Description

具有傾斜結構之發光二極體封裝之方法
本發明有關於發光二極體封裝，特定而言係有關於具有鄰近於晶粒的傾斜結構之發光二極體封裝。
高效能積體電路封裝在本領域中係廣為人知。工業需求驅動了積體電路封裝的改進，以求達到更高的散熱及電性表現，與更小之尺寸及更少之製造成本。在發光二極體元件的領域中，發光二極體需要如積體電路元件般進行封裝。隨著元件尺寸不斷地縮小，晶粒密度也不斷地提高。在如此之高密度元件中封裝的技術需求也必須要提高以滿足上述情況。傳統上，在覆晶連接方法(flip-chip attachment method)中，一焊錫凸塊陣列形成於晶粒的表面上。上述焊錫凸塊的形成可以藉由使用一焊錫複合材料(solder composite material)，經過一阻焊遮罩(solder mask)來製造出所要的焊錫凸塊圖案。晶片封裝的功能包含功率散佈(power distribution)、訊號散佈(signal distribution)、散熱(heat dissipation)、保護與支撐等等。當半導體變的更複雜，傳統的封裝技術，例如導線架封裝(lead frame package)、軟性封裝(flex package)、剛性封裝技術(rigid package technique)，已無法滿足在一個更小的晶片上製造高密度元件之需求。
上述封裝可具有一核芯，其由一常見材料例如玻璃纖維環氧樹脂(glass epoxy)所製成，且可具有附加的層堆疊 至核芯上。金屬或導電層中可透過不同的蝕刻程序例如濕蝕刻建立圖樣，上述濕蝕刻在本領域為廣為人知故此處不進一步敘述。輸出入功能一般係利用多個層之間的金屬導線達成。每一導線係藉由其在封裝上之幾何關係及位置予以產生。由於製造技術與材料要求，具有堆疊層之封裝通常在金屬層中包含了數個排氣孔。排氣孔得以允許氣體在封裝製程期間被蒸發，藉此不會有氣泡形成於封裝中。導線可安排於排氣孔之上方或之下方或鄰近排氣孔或以上之組合。由於上述導線並非位於封裝上的同一位置，且會通過金屬層中之排氣孔所造成的若干個非金屬區域，故上述導線會具有阻抗變化或不匹配。這些附加層亦稱為「堆疊」層。這些堆疊層一般係從介電材料及導電材料的交替層所形成。
伊貝森揭露了一種發光二極體封裝，標題為「用於封裝發光元件之晶片級方法以及經晶片尺寸封裝的發光元件」。經封裝之發光元件包含具有上表面及下表面之承載基板、從基板上表面延伸到基板下表面之第一和第二導電通孔以及位於基板上表面上且與第一導電通孔電性接觸的接合墊。具有第一和第二電極之二極體係安裝於接合墊上，第一電極與接合墊相電性接觸。在二極體上形成有鈍化層，以暴露二極體之第二電極。於承載基板之上表面上形成有導電線路，以與第二導電通孔和第二電極相電性接觸。導電線路係在鈍化層上並延伸穿過鈍化層，以接觸第二電極。封裝發光元件之方法包含提供包括成長基板和成 長基板上之磊晶結構的磊晶圓，將承載基板接合到磊晶圓之磊晶結構，形成通過承載基板之多個導電通孔，在磊晶結構中定義多個隔離的二極體，以及將至少一導電通孔電性連接到多個隔離的二極體中相應之二極體。
然而，上述封裝太厚且結構亦過於複雜。
本發明之一目的係提供一種具有傾斜結構之發光二極體封裝。本發明提供具有P型、N型通孔之發光二極體結構，上述P型、N型通孔係從上表面形成至下表面，藉此改善效率及縮小元件尺寸。
本發明之另一目的係提供一方便且符合成本效益之製造發光二極體封裝(晶片組裝)的方法。
於一觀點中，一種發光二極體封裝包含基板，上述基板具有貫穿上述基板之第一導電型通孔及第二導電型通孔；反射層，形成於上述基板之上表面上；發光二極體晶粒，上述發光二極體晶粒具有第一導電型焊墊及第二導電型焊墊，其中上述第一導電型焊墊係與上述第一導電型通孔相對準；傾斜結構，其由介電層形成，且形成於鄰近上述發光二極體晶粒之至少一側，用以支撐導電線路；導電線路，形成於上述傾斜結構之上表面上，以在上述第二導電型焊墊與上述第二導電型通孔之間提供路徑；以及填充材料，形成於上述第一導電型通孔及上述第二導電型通孔之內。
上述發光二極體封裝更包含透鏡，形成於上述基板之 上述上表面上，以覆蓋上述發光二極體晶粒。上述發光二極體封裝更包含第一導電型終端墊，上述第一導電型終端墊係在上述基板下方且耦合至上述第一導電型焊墊；以及第二導電型終端墊，上述第二導電型終端墊係在上述基板下方且耦合至上述第二導電型焊墊。上述發光二極體晶粒包含P/N膜，形成於上述發光二極體晶粒基板之上。上述反射層包含有機膜、金屬或合金；其中上述反射層係藉由濺鍍或電鍍銀、鋁或金而形成。上述基板之材料包含藍寶石、矽、碳化矽或氮化鋁。上述透鏡具有螢光粉材料於其中。用於上述第一導電型通孔及上述第二導電型通孔之上述填充材料係藉由鋁、鈦、銅、鎳或銀形成。上述填充材料係由銅/鎳/金所形成。
本發明將以本發明之較佳實施例及後附圖式加以詳細描述。然而，本領域中具通常知識者應得以領會，本發明之較佳實施例係用以說明之用。除此處所述之較佳實施例以外，本發明亦可廣泛施行於其他不同的實施例中。本發明之範圍除了後附申請專利範圍所指定之外在文義上並不受限制。如第一圖所示，本發明係揭露一種發光二極體封裝組件，其包含發光二極體晶粒、導電線路以及金屬互連結構。本發明之概念亦可應用至積體電路封裝，特別是用於功率元件。
第一圖係為發光二極體封裝10之橫切面示意圖，上述發光二極體封裝10具有基板100，基板100包含形成於其 中之預定通孔102及104。基板100之材料可為金屬、玻璃、陶瓷、矽、塑膠、雙馬來醯亞胺三氮雜苯樹脂(BT，Bismaleimide Triacine)、玻璃纖維板(FR4)、耐高溫玻璃纖維板(FR5)或聚醯亞胺(Polyimide，PI)等。基板100之厚度約為40至200微米。其可為單層或多層(配線電路(wiring circuit))基板。反射層112可將晶粒所發射出之光加以反射。故本發明可改善光發射效率。
具有垂直設置之焊墊的發光二極體晶粒(亦可稱發光二極體元件)116係接著藉由黏著層110黏著於基板100之上表面上。黏著層110可能僅覆蓋晶片尺寸區域。如第一圖所示，第一導電型(P型或N型)焊墊120及第二導電型(P型或N型)焊墊114係分別形成於發光二極體晶粒116之上表面及下表面上。P型焊墊係指用於發光二極體P型導電材料之焊墊，而N型焊墊係指用於發光二極體N型導電材料之焊墊。如第一圖所示，發光二極體晶粒116係從基板100面朝上且允許第一導電型焊墊120及第二導電型焊墊114均可以垂直方式排列。用以發射光線之P/N膜118係形成於發光二極體晶粒116之上表面上。反射導電層112之材料可為銀、銅、鋁、鈦、有機膜及其任意組合。
光阻層(未顯示)係藉由光微影蝕刻程序加以圖案化，以在基板100之背側表面上形成期望之電路圖案，用以作為散熱墊或終端墊108、106。填充材料係形成於通孔102、104之內，以形成導電通孔結構。如第一圖所示，以填充材料形成之終端墊108、106亦定義於基板之背側表面上， 某些終端墊108、106可連接至填充有填充材料之通孔102、104。在定義導線之後，光阻層係藉由溶液剝除。沈積用於通孔102、104之填充材料較佳係藉由本領域所熟知之電鍍程序形成。請參照第二圖，用於發光二極體封裝10之透鏡130係裝附於基板100之上表面上，以覆蓋整個發光二極體晶粒116及基板100之主要部份。透鏡130可能會以含有螢光粉(磷)塗佈。
通孔可利用雷射、機械鑽孔或蝕刻形成於基板100之內。第二導電型(P型或N型)焊墊114及第一導電型(P型或N型)焊墊120可透過填充有填充材料之通孔102、104耦合至終端墊108、106。如圖式所示，填充有填充材料之通孔(亦稱為互連結構)102、104係耦合至N型、P型焊墊及終端墊108、106。導電線路(未顯示)可設置於基板100之下表面或上表面上。本發明可壓縮封裝尺寸。於一實例中，P型、N型焊墊係形成於發光二極體之下表面上。因此，所發射出來之光將完全不會被焊墊106、108所阻擋。通孔102之開口尺寸係小於發光二極體晶粒尺寸。發光二極體晶粒一般係取放於基板上，且藉由工具使晶粒面朝上設置於黏著層110上，接著固化黏著層。
請參照第一圖及第二圖，傾斜結構122係形成於鄰近發光二極體晶粒116的至少一側，以支撐導電線路。導電線路124係形成於傾斜結構122之上表面上，以在第一導電型(P型或N型)焊墊120與通孔104上之金屬焊墊126之間提供較平滑之路徑。主動區域係指發光二極體之P/N 膜118內之區域。發光二極體晶粒116係形成於第二導電型焊墊114之上，而終端墊108係藉由互連結構102耦合至第二導電型焊墊114。第一導電型焊墊120係形成於發光二極體晶粒116之上，且係透過傾斜結構122上方之導電線路124連接於金屬焊墊126，再透過通孔104耦合至終端墊106。此排列及設置可提供較簡易且較平滑之發光二極體用訊號跡線，藉此改善元件效能。具有重佈層之傾斜結構122可替代習知之接合線結構，以提供較佳之強度且在熱應力情況下提供較佳之可靠度。用於傾斜結構之介電層係為乾膜類型(dry film type)，且係在真空、高溫及接合情況下形成。例如，晶粒厚度可約為100微米，乾膜約為35微米。一旦乾膜在高度真空及高溫情況下形成於晶粒之上方時，則乾膜將會利用材料的彈性特性流動至晶粒邊緣，迫使乾膜填滿鄰近晶粒之傾斜區域。上述情況如下：真空1E-1至1E-2托(torr)；溫度約攝氏70至110度。
本發明可利用習知發光二極體，上述習知發光二極體具有藍寶石(sapphire)基板，上述藍寶石基板在發光二極體下方可具有或不具有反射層。反射層112將藉由濺鍍程序或塗佈有機膜而形成於基板100之上表面上，藉此可以簡易的材料及低成本製造發光二極體封裝。通孔及終端墊中之填充材料可提供較短距離以用於訊號傳輸及較佳之熱導率。所發射出之光可從發光二極體完全地輻射出來，並達到較少之反射損失。散熱金屬墊易於形成；其提供最低之熱阻。另則，填充材料可以濺鍍、電鍍銅/鎳/金而形成。 發光二極體晶粒116具有垂直設置之焊墊，發光二極體之基板的材料可為矽、碳化矽、氮化鋁等。發光二極體晶粒於BT基板上係面朝上，重佈層係形成於兩側(頂側及底側)。BT基板具有導電通孔及及接觸金屬墊。
雖已敘述本發明之較佳實施例，但此領域中具通常知識者將得以領會，本發明不應限於上述較佳實施例。反之，凡熟悉此領域之技藝者，在如下述之申請專利範圍所定義之本發明的精神及範圍內，可作若干更動及潤飾。
10‧‧‧發光二極體封裝
100‧‧‧基板
102‧‧‧通孔
104‧‧‧通孔
106‧‧‧散熱墊或終端墊
108‧‧‧散熱墊或終端墊
110‧‧‧黏著層
112‧‧‧反射層
114‧‧‧第二導電型(P型或N型)焊墊
116‧‧‧發光二極體晶粒(或發光二極體元件)
118‧‧‧P/N膜
120‧‧‧第一導電型(P型或N型)焊墊
122‧‧‧傾斜結構
124‧‧‧導電線路
126‧‧‧金屬焊墊
130‧‧‧透鏡
第一圖係根據本發明顯示發光二極體晶片之橫切面示意圖。
第二圖係根據本發明顯示發光二極體晶片組件之橫切面示意圖。
10‧‧‧發光二極體封裝
100‧‧‧基板
102‧‧‧通孔
104‧‧‧通孔
106‧‧‧散熱墊或終端墊
108‧‧‧散熱墊或終端墊
110‧‧‧黏著層
112‧‧‧反射層
114‧‧‧第二導電型(P型或N型)焊墊
116‧‧‧發光二極體晶粒(或發光二極體元件)
118‧‧‧P/N膜
120‧‧‧第一導電型(P型或N型)焊墊
122‧‧‧傾斜結構
124‧‧‧導電線路
126‧‧‧金屬焊墊

Claims (11)

  1. 一種發光二極體封裝之方法，包含：提供一基板，該基板具有貫穿該基板之第一導電型通孔及第二導電型通孔；於該基板之上表面上形成一反射層；提供一發光二極體晶粒，該發光二極體晶粒具有一第一導電型焊墊及一第二導電型焊墊，其分別位於該發光二極體晶粒之一下表面及一上表面；將該發光二極體晶粒黏著於該基板上；於真空1E-1至1E-2托(torr)及溫度攝氏70至110度之條件下，於該發光二極體晶粒上方形成一乾膜，該乾膜利用彈性特性流動至該發光二極體晶粒之邊緣，以使該乾膜填滿鄰近該發光二極體之傾斜區域，以形成一傾斜結構；以及於該傾斜結構之上表面上，濺鍍或電鍍一重佈層導電線路，以在該第二導電型焊墊與該第二導電型通孔之間提供路徑。
  2. 如請求項1所述之方法，更包含一金屬焊墊，其位於該第一導電型通孔之上，以電性耦接至該導電線路。
  3. 如請求項1所述之方法，更包含一透鏡，形成於該基板之該上表面上，以覆蓋該發光二極體晶粒。
  4. 如請求項1所述之方法，更包含一第一導電型終端墊，該第一導電型終端墊係在該基板下方且耦合至該第一導電型焊墊；以及一第二導電型終端墊，該第二導電型終端墊係在該基板下方且耦合至該第二導電型焊墊。
  5. 如請求項1所述之方法進一步包含一P/N膜，形成於該發光二極體晶粒基板之上。
  6. 如請求項1所述之方法，其中該反射層包含有機膜、金屬或合金。
  7. 如請求項1所述之方法，其中該反射層係藉由濺鍍或電鍍銀、鋁或金而形成。
  8. 如請求項1所述之方法，其中該基板之材料包含藍寶石、矽、碳化矽或氮化鋁。
  9. 如請求項1所述之方法，該反射層係於該基板上方濺鍍或塗佈一有機膜所形成。
  10. 如請求項1所述之方法，其中用於該第一導電型通孔及該第二導電型通孔係藉由濺鍍和/或電鍍形成。
  11. 如請求項1所述之發光二極體封裝之方法，其中該重佈 層導電線路係由銅/鎳/金所形成。
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