TWI479585B - Vapor phase growth apparatus and vapor phase growth method - Google Patents

Description

Vapor phase growth device and vapor phase growth method

The present invention relates to a vapor phase growth apparatus and a vapor phase growth method, and more particularly to a vapor phase growth apparatus and a vapor phase growth method which are easy to achieve high productivity when depositing a vapor phase growth layer of a semiconductor substrate.

In the manufacture of a semiconductor element in which, for example, an ultrahigh-speed bipolar element, an ultra-high-speed CMOS element, a power MOS transistor, or the like is formed, an epitaxial growth technique of a controlled single crystal layer such as an impurity concentration, a film thickness, or a crystal defect is attached. Improvements in device performance are indispensable.

An epitaxial wafer used as a substrate for a semiconductor element on a surface of a semiconductor substrate such as a germanium wafer or a compound semiconductor wafer to promote the growth of a single crystal thin film, and one of the epitaxial growth devices for manufacturing the same Handle processing of a large number of wafers, and blade type processing of one wafer at a time. Here, the batch processing type epitaxial growth apparatus is capable of processing a plurality of wafers at a time, so that the yield is high and the manufacturing cost of the epitaxial wafer can be reduced. Further, in the blade type epitaxial growth apparatus, it is easier to support the large diameter of the wafer, and the uniformity of the thickness of the epitaxial growth layer is preferable.

In recent years, with the high concentration, high performance, and multi-functionality of semiconductor devices using germanium wafers, the use of germanium epitaxial wafers has become more widespread. For example, in the manufacture of a semiconductor device on which a memory circuit composed of a CMOS element is mounted, the memory capacity has reached, for example, a Gigabit level. A film thickness that ensures its manufacturing yield while crystallinity is superior to that of a product wafer For example, an epitaxial wafer of a germanium epitaxial layer of about 10 μm is often used. Further, it is expected that the component is easy to mass-produce a product wafer and it is easy to produce an ultra-high-speed CMOS device, for example, a so-called twisted germanium epitaxial layer having a tantalum alloy layer. Alternatively, on a semiconductor element having a high withstand voltage element such as a power MOS transistor, an epitaxial wafer having, for example, a germanium epitaxial layer having a film thickness of about 50 to 100 μm and a high resistivity is used.

Here, as the wafer is, for example, 300 mm Such a large diameter has a tendency to make the thickness of the epitaxial growth layer uniform and uniform over the entire wafer surface, and the importance of the blade type epitaxial growth apparatus is also increasing. However, as described above, since the blade type epitaxial growth apparatus cannot process the wafer in batches, the yield is generally lower than that of the batch processing type epitaxial growth apparatus. Moreover, it is difficult to reduce the manufacturing cost of the epitaxial wafer. In addition, in the blade type epitaxial growth apparatus, an epitaxial growth apparatus having various structures for increasing the rate of epitaxial growth has been disclosed (for example, Japanese Laid-Open Patent Publication No. Hei 11-67675).

In the blade type epitaxial growth apparatus disclosed in Japanese Laid-Open Patent Publication No. Hei 11-67675, for example, the growth rate of the tantalum epitaxial layer can be increased to about 10 μm/min. In the growth of the germanium epitaxial layer, the temperature of the wafer must reach a high temperature of 1000 to 1200 °C. Therefore, in order to improve the yield during the manufacture of epitaxial wafers, it is extremely important to shorten the processing time for temperature rise/down of temperature from room temperature to the upper growth temperature of the wafer. Further, since the epitaxial layer is a single crystal layer, it is necessary to prevent the occurrence of crystal defects.

However, in the prior blade-type epitaxial growth apparatus, especially the processing time required for the wafer to cool down after the growth of the epitaxial layer is difficult to shorten, the temperature reduction treatment is very large for the high yield of epitaxial wafer fabrication. The bottleneck problem.

Accordingly, an object of the present invention is to provide a vapor phase growth apparatus and a vapor phase growth method which can shorten the temperature reduction time after the vapor phase growth process and increase the productivity of the vapor phase growth layer.

In order to achieve the above object, a vapor phase growth apparatus according to an aspect of the present invention has a gas supply port at an upper portion of a cylindrical reaction furnace, an exhaust port at a lower portion thereof, and a wafer for mounting thereon. The wafer holding member and the vane type epitaxial growth device including the gas rectifying plate between the wafer holding member and the precursor gas supply port, wherein the distance between the gas rectifying plate and the wafer holding member is set to The cooling gas for cooling the wafer is in a rectified state on the wafer surface or on the wafer holding member surface.

Further, in a vapor phase growth method according to an aspect of the present invention, a gas supply port is provided in an upper portion of a cylindrical reaction furnace, an exhaust port is provided in a lower portion thereof, and a wafer is placed inside the wafer. The wafer holding member and the vapor phase growth device including the gas rectifying plate between the wafer holding member and the precursor gas supply port. Then, using the vapor phase growth apparatus, the gas for film formation flows from the gas supply port through the gas rectifying plate to the reaction furnace to promote the accumulation of the vapor phase growth layer, and the gas for cooling is accumulated after the vapor phase growth layer is deposited. A vapor phase growth method for flowing a gas substrate from a gas supply port through a gas rectifying plate to cool the wafer substrate, characterized in that the gas rectifying plate and The distance between the pre-recorded wafer holding members is set such that the cooling gas is in a rectified state on the wafer surface or the wafer holding member surface.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

Fig. 1 is a view showing the configuration of a blade type epitaxial growth apparatus according to an embodiment of the present invention. As shown in Fig. 1, the epitaxial growth apparatus includes, for example, a processing furnace 11 of a cylindrical hollow body made of stainless steel, and a gas supply port 12 for introducing a film forming gas from the top to the inside of the processing furnace 11, The film forming gas introduced into the gas supply port 12 is rectified to the gas rectifying plate 13 which is disposed in a laminar flow manner on the semiconductor wafer W disposed below. Further, a gas exhaust port 14 for discharging a reaction product and a part of the film forming gas which have been reacted on the surface of the semiconductor wafer W and the like from the bottom of the processing furnace 11 is provided. Here, the gas discharge port 14 is connected to a vacuum pump (not shown).

Further, the inside of the processing furnace 11 is provided with a rotating body unit 16 on which the annular holder 15 for holding the wafer holding member holding the semiconductor wafer W is placed and rotated, and is placed The semiconductor wafer W of the annular support 15 is heated by radiant heat. Here, the rotating body unit 16 has a rotating shaft 16a connected to a rotating device (not shown) located below, and is mounted to be rotatable at a high speed. Further, the cylindrical rotating shaft 16a may be connected to a vacuum pump required for exhausting the hollow rotating body unit 16 by pumping air, semi-conductive The bulk wafer W is vacuum-adsorbed to the annular support 15. Further, the rotating shaft 16a is inserted into the bottom of the processing furnace 11 so as to be freely rotatable via a vacuum sealing member.

Then, the heater 17 is fixed to the support table 19 of the support shaft 18 that penetrates the inside of the rotary shaft 16a. A so-called protruding pin (not shown) for detaching the semiconductor wafer W from the annular support 15 is formed on the support table 19. Further, as the above-described wafer holding member, instead of the annular holder, it is also possible to change the structure to approximately the entire surface of the semiconductor wafer W. Here, the wafer holding member is usually formed by placing a disk-shaped wafer substrate. Therefore, the planar shape of the edge of the wafer holding member is circular, and it is preferably formed of a material that does not block the radiant heat of the heater 17.

In the above-described blade type epitaxial growth apparatus, the gas rectifying plate 13 is, for example, a disk body made of quartz glass, and is formed with a plurality of porous gas discharge ports. Then, as shown in FIG. 1, assuming that the distance between the upper surface of the annular supporter 15 disposed oppositely and the lower surface of the gas rectifying plate 13 is H, the separation distance H is set so as to cool the semiconductor. The cooling gas of the wafer W is in a rectified state on the surface of the semiconductor wafer W or on the surface of the annular support 15 of the wafer holding member.

Here, it is preferable that the outer circumferential diameter of the annular support 15 is D, and it is preferable to satisfy H/D ≦ 1/5. Further, since the inner peripheral side of the annular support 15 is subjected to fisheye processing, and the back surface of the semiconductor wafer W is placed in contact with the fisheye surface, the main surface of the semiconductor wafer W is formed in a ring shape. The main faces of the support 15 are located at substantially the same height.

As shown in FIG. 1, the side wall of the processing furnace 11 is provided with a semiconductor crystal. The wafer W is fed to the wafer inlet/outlet 20 and the gate valve 21 for feeding, and is connected between the load-lock chamber (not shown) and the processing furnace 11 by the gate valve 21, and can be transported by the robot arm. To transport the semiconductor wafer W. Here, for example, a transfer robot arm made of synthetic quartz is required to be inserted into the space of the gas rectifying plate 13 and the annular holder 15 which is a wafer holding member. Therefore, the distance H must be set, and the transfer machine can be secured. The space in which the arm is inserted is above the inch method.

Hereinafter, when the distance H is specifically indicated, the semiconductor wafer W is, for example, 200 mm in diameter. When the wafer is waferd, it is assumed that the outer circumference D of the annular support 15 is 300 mm. . Then, the insertion space necessary for the conveyance operation of the transport robot arm is, for example, about 10 mm, and the ideal separation distance H is in the range of 20 mm to 60 mm.

Here, when the gas rectifying plate is designed to be movable up and down (see FIG. 5) as will be described later, the distance between the surface of the semiconductor wafer W and the lower surface of the gas rectifying plate 13 during vapor phase growth may be After about 1 mm, after the gas phase growth is completed, the gas rectifying plate 13 is moved upward by about 10 mm, and the transfer of the robot W allows the wafer W to be transported. At this time, if the distance between the surface of the semiconductor wafer W and the lower surface of the gas rectifying plate 13 is less than 1 mm, the film thickness of the vapor phase growth may fluctuate or a defect may occur. Therefore, the surface of the semiconductor wafer W and the gas rectifying plate 13 are The distance below is based on 1mm.

Next, the film formation method of the epitaxial layer of the blade type epitaxial growth apparatus will be described, and the operation and the effects of the present embodiment will be described with reference to Figs. 1, 2 and 3. Fig. 2 is an explanatory view showing a schematic process of a film formation process of the epitaxial layer. figure 2 In the middle, the horizontal axis represents the processing time of the film formation cycle, and the vertical axis represents the wafer temperature of the semiconductor wafer W. 3 is a longitudinal cross-sectional view of the blade type epitaxial growth apparatus in a state in which the processing furnace 11 feeds and feeds the semiconductor wafer W.

First, at the processing time t ₀ shown in FIG. 2, the semiconductor wafer W in the load lock chamber at room temperature T ₀ and in a reduced pressure state is opened as shown in FIG. The robot arm 22 is inserted into the processing furnace 11 from the wafer inlet and outlet 20. Here, the inside of the processing furnace 11 is, for example, a reduced pressure state of a nitrogen (N ₂ ) atmosphere, but the pressure is set to be in a positive pressure state with respect to the load lock chamber. Thereby, it is possible to prevent contamination of the inside of the processing furnace 11 by particles or the like from the load lock chamber. Then, the semiconductor wafer W is placed on the annular support 15 via, for example, a protruding pin (not shown), and the transfer robot 22 is returned to the load lock chamber, and the gate valve 21 is closed.

Then, the annular support is placed a semiconductor wafer W 15, the system for pre-heating by the heated standby at the first temperature T ₁ of the heater 17 is heated, stabilizing T ₁ from the processing time required Keep the temperature. During the preliminary heating, the N ₂ gas is replaced with hydrogen gas (H ₂ ), and the exhaust gas in the processing furnace 11 is set to a predetermined degree of vacuum.

Next, the heating power of the heater 17 is increased, and the semiconductor wafer W is heated to the epitaxial growth temperature, that is, the second temperature T ₂ . Then, when the semiconductor wafer W is stabilized at the second temperature T ₂ at the processing time t ₂ , the rotator unit 16 is rotated at a desired speed, and the predetermined film forming gas is supplied from the gas supply port 12, under vacuum, until the time t ₃ to the process, to promote growth of the epitaxial layer of the semiconductor wafer W surface.

For example, when the germanium epitaxial layer is grown, the first temperature T ₁ is set to a desired temperature in the range of 500 to 900 ° C, and the second temperature T ₂ is set to a desired temperature in the range of 1000 to 1200 ° C. Then, as the source gas system of ruthenium, SiH ₄ , SiH ₂ Cl ₂ or SiHCl ₃ may be used; and as the dopant gas system, B ₂ H ₆ , PH ₃ or AsH ₃ may be used. Further, as the carrier gas, H ₂ is usually used. These gas systems are gas for film formation.

In the processing furnace 11 during the growth of the bismuth epitaxial layer, a desired pressure in the range of about 2 × 10 ³ Pa (15 Torr) to about 9.3 × 10 ⁴ Pa (700 Torr) is set. Further, the rotation of the rotator unit 16 is set to, for example, a desired number of rotations in the range of 300 to 1,500 rpm.

Subsequently, the processing time t of the epitaxial growth on the ends _3, there is formed on the semiconductor wafer W referred epitaxial layer began to cool. Here, the supply of the film forming gas and the rotation of the rotator unit 16 are stopped, and the semiconductor wafer W on which the epitaxial layer has been formed is held on the annular support 15 and automatically adjusted to heat the film. The heating output of the device 17 is lowered to the first temperature T ₁ .

Then, almost simultaneously, as shown in FIG. 1, the cooling gas 23 flows into the processing furnace 11 from the gas supply port 12. Then, the cooling gas 23 rectified by the gas rectifying plate 13 is used to air-cool the semiconductor wafer W. Here, the cooling gas 23 may be an H ₂ gas which is the same as the carrier gas of the film forming gas, and an inert gas such as argon or helium or N ₂ gas may be used. Further, the pressure in the processing furnace 11 flowing into the cooling gas 23 is the same as the pressure at which the epitaxial layer is grown.

As described above, the distance between the gas rectifying plate 13 and the annular support 15 in the present embodiment is such that the distance H between the gas rectifying plate 13 and the annular support 15 is different from the outer diameter D of the annular support member 15 as described above. It is satisfied with H/D≦1/5. Therefore, in the airflow of the cooling gas 23 shown in FIG. 1, as will be described later, the eddy current is hardly generated on the semiconductor wafer W to be in a rectified state, and high-uniformity cooling can be maintained in the surface of the semiconductor wafer W. Then, the thermal stress generated on the semiconductor wafer W during cooling can be reduced, and even if the forced cooling rate of the cooling gas 23 is increased, generation of crystal defects such as slippage of the semiconductor wafer W can be suppressed. Therefore, the time required for the temperature of the semiconductor wafer W after epitaxial growth can be shortened.

For example, the processing time t 2 shown in FIG. _3, the semiconductor wafer W T ₂ decreased from the second temperature to the epitaxial growth temperature of the preliminary heating temperature in the first temperature T ₁ reaches the interval time until stabilization is The prior art, which is indicated by a broken line in Fig. 2, can be shortened by about 1/2 to 1/3.

Next, after the semiconductor wafer W is stabilized at the first temperature T ₁ , the back surface of the semiconductor wafer W is lifted up by, for example, a protruding stitch, and is detached from the annular support 15 . Further, the means for detaching the semiconductor wafer W from the annular support 15 may not be a protruding pin, or may be an electrostatic bonding method or a white-powered chuck method in which the semiconductor wafer W may float itself. Then, the gate valve 21 is opened again as shown in FIG. 3, and the transfer robot 22 is inserted between the gas rectifying plate 13 and the annular support 15 to place the semiconductor wafer W thereon. Thereafter, in a state in which the projecting stitch is lowered, the transfer robot 22 is held at the upper insertion position, and the temperature of the semiconductor wafer W is stabilized by the third temperature T ₃ lower than the first temperature T ₁ . Time t ₄ so far.

Thereafter, the transfer robot 22 carrying the semiconductor wafer W is returned to the load lock chamber, and the gate valve 21 is closed. Then, the temperature of the semiconductor wafer W is restored to room temperature T ₀ in the load lock chamber. Here, as described in the case of the processing time t ₀ , for example, in the processing furnace 11 in which the N ₂ gas atmosphere is decompressed, the positive pressure is compared with the load lock chamber.

As described above, the epitaxial layer formation cycle of one semiconductor wafer is completed, and then the film formation of the other semiconductor wafer is performed in accordance with the same process as described above.

The semiconductor wafer W receives air cooling of the cooling gas 23 on the transport robot 22 from the time period from the first temperature T ₁ to the third temperature T _{3 being} stabilized. Then, the time interval from when the semiconductor wafer W is lowered from the first temperature T ₁ to the third temperature T ₃ is shortened to about 1/2 of the prior art shown by the broken line in FIG. 2 . Further, the processing time t ₅ shown in FIG. 2 is an example of the time during which the semiconductor wafer temperature in the prior art is lowered from the first temperature T ₁ to the third temperature T ₃ .

Next, the function of the structure of the above-described embodiment in the case of air cooling of the semiconductor wafer after the epitaxial layer growth is described with reference to the schematic diagram of FIG. 4 is a gas flow pattern diagram of the cooling gas 23 between the gas rectifying plate 13 of the vane type epitaxial growth apparatus and the annular support 15 holding the semiconductor wafer W. Here, FIG. 4A is the above-described separation distance H, which is a case where the circumferential diameter D (diameter of the wafer holding member) of the annular support 15 is satisfied, and H/D≦1/5 is satisfied; FIG. 4B is An example of the case where the distance H is H/D>1/5.

The cooling gas 23 in the processing furnace 11 is a viscous flow, and is introduced from the gas supply port 12 and passes through the porous gas discharge port of the gas rectifying plate 13, and is rectified into, for example, a laminar flow and flows down. Here, in the configuration shown in FIG. 4A, the cooling gas 23 that has flowed down reaches the main surface of the semiconductor wafer W and the annular support 15, and then is bent in the horizontal direction along these main surfaces. Maintain the rectification state. Further, turbulent flow does not occur on the outer peripheral end of the annular supporter 15.

Therefore, in the semiconductor wafer W, the cooling gas 23 is brought into contact at a uniform temperature and flow rate in the plane thereof, and thus the heat dissipation by the heat exchange of the cooling gas 23 is uniformly performed. Further, there is no turbulent flow at the outer peripheral end of the annular support 15 to cause heat dissipation disorder, and the uniformity of heat dissipation can be maintained. Then, when the temperature of the semiconductor wafer W is lowered, the in-plane temperature thereof can be kept uniform. In addition, heat dissipation from the surface of the semiconductor wafer W by heat radiation is uniform in the plane.

On the other hand, according to the configuration shown in FIG. 4B, the flow of the cooling gas 23 flowing down on the main surface of the semiconductor wafer W and the annular support 15 is easily disturbed and destroyed. Moreover, they will arrive at these main faces and then meander and flow in the horizontal direction. Further, at the outer peripheral end of the annular support 15, the turbulence is easily generated. For these reasons, the cooling gas 23 that is turbulent in the rectified state is attached to the outer peripheral side of the semiconductor wafer W or the annular support 15, and the eddy current 24 is easily generated. Then, as the H/D increases, the eddy current 24 is even generated on the inner circumference of the semiconductor wafer W.

Since such a eddy current 24 is generated, the semiconductor wafer W is in its plane The heat dissipation by heat exchange with the cooling gas 23 is unevenly performed. Then, when the temperature of the semiconductor wafer W is lowered, the uniformity of the temperature in the surface thereof is impaired.

As described above, in the present embodiment, the time required for the temperature of the semiconductor wafer to be discharged to the outside of the processing furnace after the growth of the epitaxial layer is completed, that is, the processing time t ₃ to the processing time t ₄ shown in FIG. time interval, t is the treatment time _{t. 3} to ₅ intervals may be greatly reduced over the prior art processing time. Moreover, the yield at the time of film formation of the epitaxial layer is improved, and it becomes easy. Here, since the growth time (t ₃ -t ₂ ) of the epitaxial layer is shortened, the occupation ratio of the film formation cycle period of the semiconductor wafer cooling time (t ₄ -t ₃ ) after epitaxial growth increases. The shortening effect of the cooling time in the present embodiment is increased.

For example, when a tantalum epitaxial layer having a film thickness of about 10 μm is formed, the yield is increased by about 20%. Then, when the desired film thickness of the epitaxial layer is thinned, the rate of increase in the yield is more increased when the growth rate of the epitaxial layer is increased.

Furthermore, in the present embodiment, the temperature drop of the semiconductor wafer after the epitaxial layer growth is more stable than in the prior art, and the cooling unevenness of the semiconductor wafer is reduced. Therefore, when the transfer robot 22 carries the semiconductor wafer out of the load lock chamber, the frequency of occurrence of wafer cracking is also greatly reduced. Further, the effect of reducing the crystal defects such as the sliding position of the semiconductor wafer is accompanied by an improvement in the production yield of the deposition of the epitaxial layer.

Fig. 5 is a longitudinal sectional view showing a blade type epitaxial growth apparatus according to another embodiment of the present invention. As shown in Fig. 5, the gas rectifying plate 13 is set to be movable up and down (arrows in the drawing). That is, it is disposed on the inner wall of the reaction furnace 11. The sliding member 51 has a connecting member 52a extending from a driving mechanism 52 such as an air cylinder to the opposite surface. The upper portion between the connecting member 52a and the drive mechanism is provided with a bellows 52b.

Here, the distance between the gas rectifying plate 13 and the semiconductor wafer W by the drive mechanism 52 can be adjusted from 1 mm to 60 mm, and can be grown even when it is grown to an extent extremely close to 1 mm. Further, when the semiconductor wafer W is fed and fed, the distance between the gas rectifying plate 13 and the semiconductor wafer W is preferably about 20 mm, but it may be about 10 mm.

As described above, when the semiconductor wafer is formed, the gas rectifying plate 13 and the semiconductor wafer W are close to each other; and when the semiconductor wafer W is fed and fed, the distance between the gas rectifying plate 13 and the semiconductor wafer W is further changed so that The feeding and feeding of the semiconductor wafer W is possible.

Here, the up-and-down movement of the gas rectifying plate 13 may be linked to the movement of the mechanism for releasing the semiconductor wafer W from the annular support 15, for example, the movement of the protruding stitches.

In the embodiment of Fig. 5, the distance between the gas rectifying plate 13 and the semiconductor wafer W during growth is preferably as narrow as possible, but it is practically limited to about 1 mm. Further, when the thickness is adjusted to about 1 mm, the annular supporter 15 that holds the wafer may be moved in conjunction with the heater 17 instead of the gas rectifying plate 13.

According to the embodiment of the present invention described above, it is possible to provide a gas phase in which the temperature of the wafer after the vapor phase growth process is uniformly cooled, the cooling time is shortened, and the gas phase layer deposition is easily increased. Growth device and gas phase growth method.

Although the preferred embodiments of the present invention have been described above, the above embodiments are not intended to limit the present invention. Various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the invention.

For example, in the above-described embodiment, the blade type epitaxial growth apparatus may be connected to a transfer chamber such as a cluster tool by the gate valve 21.

Further, the wafer holding member as described above is not limited to the annular holder; it may be a so-called socket which has a heating mechanism and contacts the entire back surface of the semiconductor wafer. In the case of an annular supporter (opener in the center), a flat plate that can be detached from the opening can be disposed. For example, by lifting the flat plate, the transfer robot can be used to send the wafer to the reaction. Inside and outside the furnace.

Further, the gas supply port of the present invention may not be on the top surface of the reactor, and may be in the upper portion of the entire reactor, and may be, for example, on the side surface of the reactor. Further, the gas exhaust port may not be on the bottom surface of the reactor, and may be in the lower portion of the entire reactor, for example, on the side of the reactor.

Further, the present invention is also applicable to a blade type epitaxial growth apparatus having such a structure in which a semiconductor wafer for promoting epitaxial growth is placed on a non-rotating and fixed wafer holding member.

Then, as the wafer substrate on which the film formation is performed, a tantalum wafer is typically used, but a semiconductor substrate other than tantalum such as a tantalum carbide substrate may be used. In addition, a film formed on a wafer via plate is generally a tantalum film or a single crystal germanium film containing impurities such as boron, phosphorus or arsenic, but a single crystal germanium film containing a polyfluorene film or the like. A thin film such as a compound semiconductor such as a GaAs film or a GaAlAs film can be applied without any trouble.

Further, in the present invention, the growth of the semiconductor is not limited to epitaxial growth, and may be general vapor phase growth, such as MOCVD. Moreover, the epitaxial growth device is not necessarily a blade type.

11‧‧‧Processing furnace

12‧‧‧ gas supply port

13‧‧‧Rectifier board

14‧‧‧ gas vents

15‧‧‧Ring Support

16‧‧‧Rotating body unit

16a‧‧‧Rotary unit

17‧‧‧heater

18‧‧‧ Support shaft

19‧‧‧Support desk

20‧‧‧ wafer entrances and exits

21‧‧‧ gate valve

22‧‧‧Handling robot

23‧‧‧Cooling gas

24‧‧‧ eddy current

W‧‧‧Semiconductor Wafer

51‧‧‧Slidable parts

52‧‧‧ drive mechanism

52a‧‧‧Connecting parts

52b‧‧‧ telescopic bladder

Fig. 1 is a longitudinal sectional view showing a configuration of a blade type epitaxial growth apparatus according to an embodiment.

Fig. 2 is a schematic explanatory view showing a film forming process of the embodiment.

Fig. 3 is a longitudinal sectional view showing a blade type epitaxial growth apparatus according to an embodiment.

Fig. 4 is a schematic view showing a gas flow of a cooling gas according to an embodiment.

Fig. 5 is a longitudinal sectional view for explaining a blade type epitaxial growth apparatus according to another embodiment.

11‧‧‧Processing furnace

12‧‧‧ gas supply port

13‧‧‧Rectifier board

14‧‧‧ gas vents

15‧‧‧Ring Support

16‧‧‧Rotating body unit

16a‧‧‧Rotary unit

17‧‧‧heater

18‧‧‧ Support shaft

19‧‧‧Support desk

20‧‧‧ wafer entrances and exits

21‧‧‧ gate valve

22‧‧‧Handling robot

23‧‧‧Cooling gas

24‧‧‧ eddy current

W‧‧‧Semiconductor Wafer

Claims (9)

A vapor phase growth apparatus includes a gas supply port at an upper portion of a cylindrical reaction furnace, an exhaust port at a lower portion thereof, and a wafer holding member for mounting a wafer therein, and is held in the wafer. A gas phase growth device including a gas rectifying plate between the member and the gas supply port, wherein the distance between the pre-recorded gas rectifying plate and the pre-recording wafer holding member is set so as to cool the pre-recorded wafer for cooling The gas is in a rectified state on the surface of the pre-recorded wafer or on the surface of the wafer holding member; if the distance between the pre-recorded gas rectifying plate and the pre-wafer holding member is H, the diameter of the pre-recorded wafer holding member is D, Then, H/D≦1/5 is satisfied, and when the cooling gas is supplied, the pre-wafer holding member is rotated at a number of revolutions of 300 to 1500 rpm. The vapor phase growth apparatus according to claim 1, wherein the lower surface of the gas rectifying plate and the upper surface of the pre-wafer holding member are inserted to feed the pre-recorded wafer. Preface the handling robot inside and outside the reaction furnace. The vapor phase growth apparatus according to claim 2, wherein the gas rectifying plate is configured to be movable up and down. The vapor phase growth apparatus according to claim 3, wherein the vertical movement of the pre-recorded gas rectifying plate is a movement of a mechanism for detaching the pre-wafer holding member for feeding the pre-recorded wafer. Link together. For example, the gas phase growth device described in claim 1 of the patent scope, The distance between the lower surface of the gas rectifying plate and the upper surface of the wafer holding member can be adjusted to be 1 mm or more and 60 mm or less. A vapor phase growth method is a wafer holding member having a gas supply port at an upper portion of a cylindrical reaction furnace, an exhaust port at a lower portion thereof, and a wafer for mounting a wafer therein. a vapor phase growth device including a gas rectifying plate between the circular holding member and the front gas supply port, and the film forming gas flows from the preceding gas supply port through the gas rectifying plate to the pre-reaction furnace to promote the pre-recorded wafer After the gas phase growth layer is deposited, and the accumulation of the vapor phase growth layer is promoted, the cooling gas is passed from the preceding gas supply port to the pre-reaction furnace through the gas rectifying plate, so that the gas phase growth of the pre-recorded wafer is lowered. The method is characterized in that the distance between the pre-recorded gas rectifying plate and the pre-recorded wafer holding member is set such that the pre-cooling gas is on the surface of the pre-recorded wafer or on the surface of the pre-recorded wafer holding member, and is in a rectified state; Let the distance between the pre-recorded gas rectifying plate and the pre-wafer holding member be H, and let the pre-recorded wafer holding member have a diameter D, which satisfies H/D≦1/5, cooling gas. Is supplied, the former referred to the wafer holding member at a rotational lines of 300 ~ 1500rpm to rotate. The vapor phase growth method according to claim 6, wherein a front surface of the gas rectifying plate and a front surface of the pre-wafer holding member are provided for feeding the pre-recorded wafer substrate to the inside and outside of the pre-reaction furnace. The transfer robot arm advances the feed of the wafer substrate to the inside and outside of the reaction furnace by the movement of the transfer robot. The gas phase growth method as described in claim 7 of the patent application scope, Wherein, when the film is formed on the pre-recorded wafer, the front rectifying plate and the pre-recording wafer are close to each other; when the pre-recording wafer is sent out, the distance between the pre-reinforcing plate and the pre-recorded wafer is farther, so that the pre-recording wafer It is possible to send and drop. The vapor phase growth method according to claim 8, wherein the pre-rectification plate is movable up and down, and is interlocked when the pre-recorded wafer is fed and fed.