JP5486476B2 - Method for manufacturing silicon film - Google Patents

Description

  The present invention relates to a method of manufacturing a silicon film by vapor phase growth of a silicon film on a substrate.

  Patent Document 1 discloses an example of a silicon film manufacturing method. In the technique of Patent Document 1, a substrate is placed on a mounting table disposed in a vapor deposition chamber, and a source gas is supplied from above the vapor deposition chamber toward the substrate. The source gas is a silane chloride gas, and is mixed with the carrier gas and supplied. The substrate is rotated in a heated state. When the source gas comes into contact with the surface of the substrate, silicon atoms contained in the source gas are bonded to the substrate, and a silicon film is formed on the substrate. After the silicon film is formed on the substrate, silicon atoms contained in the source gas are combined with silicon atoms constituting the silicon film, and the thickness of the silicon film increases. That is, the silicon film grows. The source gas that has not been used for the crystal growth of the silicon film moves toward the end of the substrate along the surface of the substrate and is discharged outside the vapor phase growth apparatus.

JP 2000-306850 A

  If the other conditions are the same, the higher the substrate temperature, the faster the growth rate of the silicon film that grows on the substrate. On the other hand, a part of the silane chloride gas contained in the source gas is decomposed in the gas phase before reaching the surface of the substrate to generate hydrogen chloride gas. A by-product generated during the crystal growth of the silicon film is also hydrogen chloride gas. Therefore, when the amount of silane chloride gas decomposed in the gas phase increases, the growth rate of the silicon film decreases. Silane chloride gas decomposes in a high-temperature space around the substrate. As the substrate temperature is increased, the range of the high temperature space is expanded and the decomposition of the silane chloride gas is promoted. Even if the temperature of the substrate is increased excessively, the growth rate of the silicon film cannot be increased.

Therefore, conventionally, the substrate temperature is in the range of 1000 ° C. to 1100 ° C. In that temperature range, it is possible to balance the use of both the phenomenon of suppressing the thermal decomposition of chlorosilane gas, and the higher the substrate temperature, the faster the crystal growth rate if the other conditions are the same. And the actual crystal growth rate obtained is maximized. For the crystal growth rate obtained by this method, it is sufficient that the supply amount of the silane chloride gas is about 200 μmol / min per 1 cm ^{2 of the} substrate. The amount of gas beyond that is unnecessary, and has been disadvantaged because the amount of hydrogen chloride gas generated by pyrolysis increases.

  The present invention has been developed to provide a vapor phase growth technique capable of crystal growth of a higher quality silicon film at a higher speed than before.

In the silicon film manufacturing method disclosed in this specification, the rotation speed of the substrate is increased as compared with the conventional method. Then, the thermal decomposition of silane chloride gas is suppressed, and the phenomenon that the substrate temperature can be made higher than before is utilized.
In the silicon film manufacturing method disclosed in this specification, a source gas is supplied from a direction orthogonal to the surface of the substrate toward the substrate heated at 1250 ° C. to 1350 ° C. and rotating at 1500 rpm to 3500 rpm. A source gas supply step is provided. According to this method, the supply amount of the silane chloride gas contained in the source gas can be set to 200 μmol / min or more per 1 cm ² of the substrate, and a crystal growth rate corresponding to the supply amount can be obtained. In the present specification, a source gas supply step for supplying source gas from a direction orthogonal to the surface of the substrate toward a substrate heated at 1200 to 1400 ° C. and rotating at 1500 to 3500 rpm. A method for manufacturing a silicon film is also disclosed.

When the rotation speed of the substrate is increased, the flow of the source gas is likely to be disturbed, and there is a concern that the quality of the silicon film on which the crystal grows is degraded. However, in practice, it has been found that even if the substrate rotation speed is 1500 rpm or more, the quality of the silicon film on which crystals grow does not deteriorate as long as it is 3500 rpm or less.
When the rotation speed of the substrate is increased, the gas phase range in which the source gas is heated by the heated substrate and becomes high temperature is narrowed. That is, when the rotation speed of the substrate increases, the time for the silane chloride gas to reach the substrate surface through the high temperature range (the range heated to a temperature higher than the thermal decomposition temperature) is shortened, and the thermal decomposition of the silane chloride gas is suppressed. . If thermal decomposition of chlorosilane gas can be suppressed, the substrate temperature can be increased.
In this method, these technical elements are combined, and a crystal growth rate as high as required to supply 200 μmol / min or more of silane chloride gas per 1 cm ^{2 of} the substrate has been successfully obtained.

In the above method, it is preferable to use a substrate having a melting point higher than that of silicon. The melting point of silicon is 1412 ° C. Therefore, if a substrate having a melting point higher than 1412 ° C. is used, it is possible to reliably prevent the substrate from melting when the substrate is heated to 1400 ° C. Examples of such materials include group III nitride semiconductors (GaN, AlN, AlGaN, etc.), sapphire (Al ₂ O ₃ ), silicon carbide (SiC), and the like.

  According to the technique disclosed in this specification, it is possible to grow a crystal of a higher quality silicon film at a higher speed than in the past.

Sectional drawing of the vapor phase growth apparatus used with the vapor phase growth method of an Example is shown. The state in which the silicon film is grown is shown using the partial enlarged cross-sectional view of FIG. The state in which the silicon deposition ratio exceeds 20% is shown using the partially enlarged sectional view of FIG. The relationship between the substrate temperature and the silicon deposition rate when the rotation speed of the substrate is constant is shown. The relationship between the rotation speed of the substrate and the silicon deposition rate when the temperature of the substrate is kept constant is shown.

Some of the technical features disclosed in this specification are summarized below.
(Feature 1) A source gas of 200 to 300 μmol / min is supplied to the vapor phase growth chamber per 1 cm ^{2 of the} substrate.
(Feature 2) The source gas is supplied to the substrate while maintaining the rotation speed of the substrate at 2000 to 3000 rpm.
(Feature 3) The source gas is supplied to the substrate while the substrate temperature is maintained at 1250 to 1350 ° C.

  As shown in FIG. 1, the vapor phase growth apparatus 1 includes a vapor phase growth chamber 4, a mounting table 10, and a heater 8. A raw material supply port 2 is provided above the vapor phase growth chamber 4. The raw material supply port 2 is provided in a direction orthogonal to the surface of the mounting table 10. An exhaust port 12 is provided below the vapor phase growth chamber 4. The source gas 18 is a silane chloride gas, and is introduced into the vapor phase growth chamber 4 from the source gas tank (not shown) through the source supply port 2. A carrier gas (not shown) is also introduced into the vapor phase growth chamber 4 together with the source gas 18. The exhaust gas 16 is exhausted from the vapor phase growth chamber 4 through the exhaust port 12 to the outside of the vapor phase growth apparatus 1. The mounting table 10 can be rotated as indicated by an arrow 14 by a motor (not shown). A substrate 6 can be mounted on the surface of the mounting table 10. A heater 8 is provided inside the mounting table 10. The substrate 6 can be heated to a predetermined temperature by the heater 8. A portion surrounded by a broken line 17 indicates a range of the high temperature space 17 where the gas phase temperature exceeds 900 ° C. The high temperature space 17 will be described later.

  Next, a method for vapor-depositing a silicon film on the surface of the substrate will be described. In the present embodiment, a method of growing a silicon film on an aluminum nitride (AlN) substrate 6 will be described. First, after placing the aluminum nitride substrate 6 on the surface of the mounting table 10, the aluminum nitride substrate 6 is heated to 1270 ° C. while rotating the mounting table 10 at a speed of 2500 rpm. Thereafter, the source gas 18 is introduced into the vapor phase growth chamber 4 from the source supply port 2 together with the carrier gas while maintaining the temperature of the aluminum nitride substrate 6 at 1270 ° C. Although details will be described later, the temperature of the aluminum nitride substrate 6 may be maintained in a range of 1200 to 1400 ° C., and preferably in a range of 1250 to 1350 ° C. Moreover, the rotational speed of the aluminum nitride substrate 6 should just be maintained at 1500 rpm-3500 rpm, Preferably, it should just be maintained at 2000-3000 rpm. In the conventional technique, when a silicon film is grown on the surface of the substrate, vapor phase growth is performed in a state where the substrate is heated in a range of 1000 to 1100 ° C. In this embodiment, vapor phase growth is performed in a state where the temperature of the substrate is maintained higher than in the prior art.

The source gas 18 is a silane trichloride (trichlorosilane: SiHCl ₃ ) gas, and is supplied to the surface of the aluminum nitride substrate 6 at 200 to 300 μmol / min per 1 cm ² (hereinafter referred to as a substrate unit area). Hydrogen (H ₂ ) gas is also supplied together with the source gas 18. Hydrogen gas is an example of a carrier gas. The carrier gas may contain an inert gas as necessary. In addition to the source gas 18, an impurity dopant gas may be supplied. If an impurity dopant gas is supplied together with the source gas 18, an n-type or p-type silicon film can be crystal-grown. Although the reason will be described later, in the conventional vapor phase growth technique, the supply amount of the source gas is limited to 100 to 200 μmol / min per unit area of the substrate. In general, the larger the supply amount of the source gas, the faster the growth rate of the silicon film. In the vapor phase growth of this embodiment, a large amount of source gas that could not be adopted by the conventional vapor phase growth technology can be supplied to the substrate.

  The raw material supply port 2 is provided in a direction orthogonal to the surface of the aluminum nitride substrate 6. Therefore, the source gas 18 introduced into the vapor phase growth chamber 4 moves to the surface of the aluminum nitride substrate 6 from the direction orthogonal to the surface of the aluminum nitride substrate 6. This method can shorten the distance that the source gas 18 passes through the high-temperature space 17 as compared with a method in which the source gas 18 is supplied from a direction parallel to the surface of the aluminum nitride substrate 6. As a result, an increase in the temperature of the source gas 18 can be suppressed. The time during which the source gas 18 is exposed to the temperature for decomposition can be shortened. Further, the range of the high temperature space 17 can be reduced as the aluminum nitride substrate 6 is rotated at a higher speed. In this embodiment, the aluminum nitride substrate 6 is rotated at 2500 rpm to reduce the range of the high-temperature space 17, thereby shortening the time of exposure to the temperature at which the source gas 18 is decomposed as compared with the prior art.

  As shown in FIG. 2, when the source gas 18 reaches the surface of the aluminum nitride substrate 6, the silicon film 20 grows on the aluminum nitride substrate 6. The source gas 18 that has not been used for crystal growth moves radially outward of the aluminum nitride substrate 6 along the surface of the aluminum nitride substrate 6. The raw material gas 18 that has not been used for crystal growth and the by-products generated by the crystal growth are discharged out of the vapor phase growth apparatus 1 as exhaust gas 16. The exhaust gas 16 is in contact with a portion of the mounting table 10 where the aluminum nitride substrate 6 is not mounted while being exhausted outside the vapor phase growth apparatus 1. Since the exhaust gas 16 contains a source gas 18 that was not used for crystal growth, a silicon deposition film 22 is also formed on the surface of the mounting table 10. The silicon deposition film 22 is not polycrystalline silicon like the silicon film 20 formed on the aluminum nitride substrate 6 but is often polycrystalline silicon, amorphous silicon, or a silicon compound.

Here, the reaction until the silicon film 20 is formed from the source gas 18 will be described. The reaction of the following formula (1) indicates a decomposition reaction of the raw material gas 18 (silane trichloride). The reaction of formula (1) begins to occur when the temperature of the source gas 18 exceeds 900 ° C., and becomes more active as the temperature of the source gas 18 increases. As described above, the aluminum nitride substrate 6 is heated to 1270 ° C. in advance. Therefore, a high temperature space 17 having a temperature exceeding 900 ° C. is formed around the aluminum nitride substrate 6. The reaction of Formula (1) occurs not only on the surface of the aluminum nitride substrate 6 but also in the high-temperature space 17 before the source gas 18 contacts the surface of the aluminum nitride substrate 6.
Formula (1): SiHCl ₃ → SiCl ₂ + HCl

On the surface of the aluminum nitride substrate 6, the reaction of the following formula (2) occurs following the above formula (1). The reaction of Formula (2) indicates that SiCl ₂ generated in Formula (1) reacts with a carrier gas (H ₂ gas) to generate Si and hydrogen chloride gas (HCl gas). The SiCl ₂ Si atoms generated in the formula (1) are bonded to the surface of the aluminum nitride substrate 6 or Si atoms on the surface layer portion of the silicon film 20. When the Cl atoms of SiCl ₂ bonded to the surface layer portion of the aluminum nitride substrate 6 or the silicon film 20 are removed by the H ₂ gas, a grown film of Si atoms is formed on the aluminum nitride substrate 6 and the thickness of the silicon film 20 increases. To go.
Formula (2): SiCl ₂ + H ₂ → Si + 2HCl

On the surface of the aluminum nitride substrate 6, in addition to the reaction of the above formula (2), the reaction of the following formula (3) also occurs at a constant rate. The reaction of formula (3) is the reverse reaction of formula (2). When the reaction of formula (3) becomes active, the growth rate of the silicon film 20 becomes slow. As apparent from the equation (3), the reaction of the equation (3) is more likely to occur as the concentration of the HCl gas in the vapor phase growth chamber 4 becomes higher. Therefore, when the reaction of the formula (1) occurs excessively in the vapor phase growth chamber 4, the growth rate of the silicon film 20 is slowed down.
Formula (3): Si + 3HCl → SiHCl ₃ + H ₂

  As the heating temperature of the aluminum nitride substrate 6 is increased, the reaction of the formula (2) is more likely to occur, and the crystal growth of the silicon film 20 is accelerated. However, as the heating temperature of the aluminum nitride substrate 6 is increased, the range of the high-temperature space 17 is expanded, and the reaction of the formula (1) is likely to occur. In the conventional vapor phase growth technique, when the source gas 18 is supplied at 200 μmol / min or more per substrate unit area, the amount of hydrogen chloride gas increases due to the reaction of the formula (1), and the reverse reaction shown in the formula (3) is active. Turn into. The amount of source gas 18 consumed for crystal growth of the silicon film 20 is reduced. As a result, the concentration of the source gas 18 contained in the exhaust gas 16 is increased. When the concentration of the source gas 18 in the exhaust gas 16 is increased, silicon is deposited on the surface of the mounting table 10, and the thickness t22 of the silicon deposition film 22 is increased. Although it is possible to adjust the thickness t22 of the silicon deposited film 22 by adjusting the heating temperature of the aluminum nitride substrate 6 and the rotation speed of the aluminum nitride substrate 6, it is possible to make the generation of the silicon deposited film 22 zero. Can not.

  If the thickness t22 of the silicon deposition film 22 with respect to the thickness t20 of the silicon film 20 (silicon deposition rate: t22 / t20 × 100) exceeds 20%, the silicon film 20 and the silicon deposition film 22 are connected to each other as shown in FIG. 21 is connected. When the silicon film 20 and the silicon deposition film 22 are connected, it becomes difficult to remove the aluminum nitride substrate 6 from the mounting table 10. That is, the aluminum nitride substrate 6 sticks to the mounting table 10. As a result, when the aluminum nitride substrate 6 is removed from the mounting table 10, the aluminum nitride substrate 6 or the silicon film 20 may be damaged. Further, when the silicon deposition rate increases, distortion may occur in the aluminum nitride substrate 6 due to the difference in thermal expansion coefficient between the aluminum nitride substrate 6 and the silicon deposition film 22. When distortion occurs in the aluminum nitride substrate 6, slip dislocation may occur and a depression may be formed on the surface of the silicon film 20.

  In the conventional vapor phase growth technique, when the source gas 18 is supplied at 200 μmol / min or more per substrate unit area, the amount of hydrogen chloride gas increases due to the reaction of the formula (1), and the reverse reaction shown in the formula (3) is active. Turn into. Silicon easily accumulates on the surface of the mounting table 10, and problems such as “sticking” and “slip dislocation” occur. Therefore, in the conventional vapor phase growth technique, the source gas 18 has not been supplied at 200 μmol / min or more per substrate unit area.

  As described above, problems such as “sticking” and “slip dislocation” occur when the silicon deposition rate exceeds 20%. In order to prevent these problems from occurring, it is necessary to adjust the silicon deposition rate to 20% or less. In the vapor phase growth method of the present embodiment, the aluminum nitride substrate 6 is rotated at 1500 rpm to 3500 rpm, and the range of the high temperature space 17 is reduced. By rotating the substrate at high speed, the reaction of the above formula (1) in the gas phase is suppressed, and the reverse reaction shown in the above formula (3) is suppressed. Thereby, the amount of the source gas 18 used for crystal growth of the silicon film 20 is increased, and the silicon film 20 is crystal-grown at high speed. As a result, the concentration of the source gas 18 contained in the exhaust gas 16 is reduced to a level where the silicon deposition rate does not exceed 20%. When the aluminum nitride substrate 6 exceeds 3500 rpm, the range of the high temperature space 17 is reduced, but the flow of the source gas 18 is disturbed. In some cases, the source gas 18 does not reach the aluminum nitride substrate 6 and directly contacts the surface of the mounting table 10. As a result, the above-described problems occur, and the quality of the silicon film 20 decreases. As a result of the experiment, “sticking” and “slip dislocation” did not occur when the silicon deposition rate was 15%. Even when the silicon deposition rate was 20%, “sticking” and “slip dislocation” did not occur. When the silicon deposition rate was 25%, “sticking” did not occur, but “slip dislocation” occurred. When the silicon deposition rate was 30%, “sticking” and “slip dislocation” occurred. As the silicon deposition rate increased to 50%, “sticking” and significant “slip dislocations” occurred.

  FIG. 4 shows the silicon deposition rate when the aluminum nitride substrate 6 is rotated at 2500 rpm. The horizontal axis in FIG. 4 indicates the temperature of the aluminum nitride substrate 6, and the vertical axis indicates the silicon deposition rate. The supply amount of the source gas 18 to the vapor phase growth chamber 1 is 300 μmol / min per unit area. As shown by a curve 32 in FIG. 4, when the rotation speed of the substrate is 2500 rpm, the silicon deposition rate is 20% or less when the substrate temperature is in the range of 1200 to 1400 ° C. It has been confirmed that when the substrate rotation speed is set to 1500 to 3500 rpm, the silicon deposition rate satisfies 20% or less in the entire range of the substrate temperature of 1200 to 1400 ° C. That is, when the source gas 18 is supplied to the aluminum nitride substrate 6, if the substrate temperature is maintained at 1200 to 1400 ° C. and the rotation speed of the substrate is maintained at 1500 to 3500 rpm, the silicon deposition rate is suppressed to 20% or less. be able to.

  The silicon deposition rate at a substrate temperature of 1200 ° C. and a substrate rotation speed of 1500 rpm was 20%, and the silicon deposition rate at a substrate temperature of 1200 ° C. and a substrate rotation speed of 3500 rpm was 20%. Further, the silicon deposition rate was 20% when the substrate temperature was 1400 ° C. and the substrate rotation speed was 1500 rpm, and the silicon deposition rate was 20% when the substrate temperature was 1400 ° C. and the substrate rotation speed was 3500 rpm. Plot 30 is a result of setting the supply amount of the source gas 18 to the vapor phase growth chamber 1 to 300 μmol / min per unit area under the manufacturing conditions of the prior art (substrate temperature 1100 ° C., substrate rotation speed 1000 rpm). Under the prior art manufacturing conditions, the silicon deposition rate is 50%. That is, if the substrate temperature and the rotation speed of the substrate are kept at the conventional conditions and the source gas is supplied at 300 μmol / min per unit area, problems such as “sticking” and “slip dislocation” occur.

  As described above, if the substrate temperature is maintained at 1200 to 1400 ° C. and the rotation speed of the substrate is maintained at 1500 to 3500 rpm, the silicon deposition rate can be suppressed to 20% or less. The amount of the source gas 18 consumed on the aluminum nitride substrate 6 increases, and the silicon film 20 can be crystal-grown at high speed. FIG. 5 shows the silicon deposition rate when the aluminum nitride substrate 6 is heated to 1270 ° C. The horizontal axis in FIG. 5 indicates the rotation speed of the aluminum nitride substrate 6, and the vertical axis indicates the silicon deposition rate. The supply amount of the source gas 18 to the vapor phase growth chamber is 300 μmol / min per unit area. As shown by a curve 36 in FIG. 5, it is confirmed that the silicon deposition rate satisfies 20% or less when the rotation speed of the substrate is 1500 to 3500 rpm. Plot 34 shows the silicon deposition rate under the prior art manufacturing conditions. Plot 34 shows the same results as plot 30 of FIG.

  As described above, in this embodiment, the source gas is supplied from the direction orthogonal to the surface of the substrate toward the substrate that is heated to 1200 ° C. to 1400 ° C. and is rotated at 1500 rpm to 3500 rpm. Thereby, even if the source gas is supplied at 200 μmol / min or more per substrate unit area, the silicon deposition rate can be suppressed to 20% or less. While the silicon film is grown at a high speed, it is possible to suppress the substrate from sticking to the mounting table and the occurrence of slip dislocation. Note that if the supply amount of the source gas exceeds 300 μmol / min per unit area of the substrate, the silicon film crystal growth rate becomes too high, and abnormal growth parts called spikes are formed, resulting in a high-quality silicon film. It may disappear. Therefore, the supply amount of the source gas is preferably 200 to 300 μmol / min per substrate unit area.

  As described above, it has been conventionally known that the growth rate of a silicon film increases when the substrate is heated to a high temperature. However, when the substrate is heated to a high temperature, the decomposition reaction of formula (1) occurs excessively in the gas phase, and the reverse reaction of formula (3) is activated. Therefore, in the prior art, the upper limit of the heating temperature of the substrate is suppressed to about 1100 ° C. For this reason, the growth rate of the silicon film cannot be increased, and the supply amount of the source gas is suppressed to 100 to 200 μmol / min per unit area of the substrate. On the other hand, it has been empirically known that when a silicon film is crystal-grown, sticking of the substrate, slip dislocation, and the like occur. When these phenomena occur, the quality of the silicon film deteriorates. However, no study has been made to suppress these problems by growing the silicon film at a high speed so that the silicon deposition rate does not exceed 20%. For this reason, conventionally, it has been insufficient to adjust the heating temperature of the substrate and the rotation speed of the substrate to appropriate ranges to grow a high-quality silicon film at high speed. By the vapor phase growth method disclosed in the present embodiment, a silicon film with higher quality than the conventional one can be grown at high speed. If the vapor phase growth method of the present embodiment is used, a thick silicon film of 100 to 200 μm can be manufactured with high quality on the substrate.

  Below, the more preferable numerical range is demonstrated about the temperature which heats a board | substrate, and the rotational speed of a board | substrate. As shown in FIG. 4, the silicon deposition rate decreases as the substrate temperature increases until the substrate temperature is around 1350 ° C. When the substrate temperature exceeds 1350 ° C., the silicon deposition rate begins to increase rapidly. In order to reliably suppress the silicon deposition rate to 20% or less, it is preferable to maintain the substrate temperature at 1350 ° C. or less. Further, the silicon deposition rate gradually decreases at a substrate temperature of 1250 ° C. or higher even when the substrate temperature increases. However, until the substrate temperature reaches 1250 ° C., it decreases relatively rapidly as the substrate temperature increases compared to the substrate temperature of 1250 ° C. or higher. Therefore, in order to reliably suppress the silicon deposition rate to 20% or less, it is preferable to maintain the substrate temperature at 1250 ° C. or higher. That is, it is preferable that the temperature which heats a board | substrate is 1250-1350 degreeC.

  Further, as shown in FIG. 5, the silicon deposition rate is almost the minimum value when the rotation speed of the substrate is 2000 to 2500 rpm. When the rotation speed of the substrate becomes lower than 2000 rpm, the silicon deposition rate starts to increase. Further, when the rotation speed of the substrate becomes faster than 2500 rpm, the silicon deposition rate starts to increase. Therefore, in order to reliably suppress the silicon deposition rate to 20% or less, it is preferable that the rotation speed of the substrate is 2000 to 2500 rpm.

In the above embodiment, the example in which the silicon film is crystal-grown on the aluminum nitride substrate has been described. Instead of the aluminum nitride substrate, a substrate made of sapphire (Al ₂ O ₃ ), silicon carbide (SiC), spinel, or another group III nitride semiconductor (GaN, AlGaN, etc.) may be used. These substrates have a melting point higher than that of silicon. Therefore, even if the temperature for heating the substrate is set close to the melting point of silicon, the substrate is unlikely to be deformed. Aluminum nitride and silicon carbide have a thermal expansion coefficient close to that of silicon. Therefore, among these substrates, an aluminum nitride substrate and a silicon carbide substrate are particularly preferable. The material of the substrate may be silicon. That is, a silicon film may be grown on the surface of the silicon substrate.

In the above embodiment, an example in which silane trichloride gas is used as the source gas has been described. Three instead of silane gas dichloride, silane chloride (dichlorosilane: SiH2Cl _2), silicon tetrachloride gas chloride: can also be used (tetrachlorosilane SiCl ₄₎ or the like.

  Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. In addition, the technical elements described in the present specification or drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in the present specification or the drawings can achieve a plurality of objects at the same time, and has technical utility by achieving one of the objects.

6: Substrate 18: Source gas 20: Silicon film

Claims (2)

A method for producing a silicon film by vapor-phase-growing a silicon film on a substrate,
A source gas supply step for supplying a source gas from a direction orthogonal to the surface of the substrate toward a substrate heated at 1250 ° C. to 1350 ° C. and rotating at 1500 rpm to 3500 rpm;
A method for producing a silicon film, wherein the supply amount of silane chloride gas contained in the raw material gas is 200 μmol / min or more per 1 cm ^{2 of} substrate.   2. The method of manufacturing a silicon film according to claim 1, wherein a substrate having a melting point higher than that of silicon is used.

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