TWI476968B - Light-emitting device - Google Patents

Light-emitting device Download PDF

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TWI476968B
TWI476968B TW100136713A TW100136713A TWI476968B TW I476968 B TWI476968 B TW I476968B TW 100136713 A TW100136713 A TW 100136713A TW 100136713 A TW100136713 A TW 100136713A TW I476968 B TWI476968 B TW I476968B
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conductive
layer
heat conducting
electrode layer
heat
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TW100136713A
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Chinese (zh)
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TW201316572A (en
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Shih Chang Hsu
Tsung Chi Lee
Po Wei Li
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Lite On Electronics Guangzhou
Lite On Technology Corp
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發光裝置Illuminating device

本發明係有關於一種發光裝置,尤指一種可有效提升散熱效能的發光裝置。The invention relates to a light-emitting device, in particular to a light-emitting device which can effectively improve heat dissipation performance.

按,發光二極體(LED)與傳統光源比較,發光二極體係具有體積小、省電、發光效率佳、壽命長、操作反應速度快、且無熱輻射與水銀等有毒物質的污染等優點,因此近幾年來,發光二極體的應用面已極為廣泛。過去由於發光二極體的亮度還無法取代傳統之照明光源,但隨著技術領域的不斷提升,目前已研發出高照明輝度的高功率發光二極體,其足以取代傳統的照明光源。According to the light-emitting diode (LED), compared with the traditional light source, the light-emitting diode system has the advantages of small volume, power saving, good luminous efficiency, long service life, fast operation response, and no pollution of toxic substances such as heat radiation and mercury. Therefore, in recent years, the application of light-emitting diodes has been extremely extensive. In the past, the brightness of the light-emitting diodes could not replace the traditional illumination source. However, with the continuous improvement of the technical field, high-power light-emitting diodes with high illumination brightness have been developed, which is sufficient to replace the traditional illumination source.

然而,傳統所使用的發光二極體裝置(尤其是針對採用“熱電合一”形式的發光二極體裝置而言),其散熱效能仍然無法被有效提升。故,如何藉由結構設計的改良,以提升發光二極體裝置的散熱效能,已成為該項事業人事所欲解決的重要課題。However, conventionally used light-emitting diode devices (especially for a light-emitting diode device in the form of "thermoelectric integration"), the heat dissipation performance cannot be effectively improved. Therefore, how to improve the heat dissipation performance of the light-emitting diode device by improving the structural design has become an important issue to be solved by the business personnel.

本發明實施例在於提供一種發光裝置,其規劃發光單元的導熱路徑和導電路徑,除了有效提升散熱效能外,亦進一步提升發光裝置的發光效率。An embodiment of the present invention provides a light-emitting device that plans a heat-conducting path and a conductive path of the light-emitting unit, and further improves the light-emitting efficiency of the light-emitting device.

根據本發明的其中一種方案,本發明提供一種發光裝置,其包括:一發光單元及一導熱絕緣單元。發光單元包括至少一第一導電支架、至少一鄰近第一導電支架的第二導電支架、一介於第一導電支架與第二導電支架之間的殼體、及至少一設置於第一導電支架上的發光元件,其中第 一導電支架具有至少一從殼體裸露的第一導電部及至少一從殼體裸露的導熱部,且第二導電支架具有至少一從殼體裸露的第二導電部。導熱絕緣單元包括至少一設置於導熱部上的導熱絕緣層。According to one aspect of the present invention, the present invention provides a light emitting device comprising: a light emitting unit and a heat conducting insulating unit. The light emitting unit includes at least one first conductive support, at least one second conductive support adjacent to the first conductive support, a housing between the first conductive support and the second conductive support, and at least one disposed on the first conductive support Light-emitting element, where A conductive bracket has at least one first conductive portion exposed from the housing and at least one heat conducting portion exposed from the housing, and the second conductive bracket has at least one second conductive portion exposed from the housing. The thermally conductive insulating unit includes at least one thermally conductive insulating layer disposed on the thermally conductive portion.

綜上所述,本發明實施例所提供的發光裝置,其可透過“導熱絕緣層設置於導熱部上”的設計,規劃發光元件的導熱路徑及導電路徑,使得本發明發光裝置的散熱效能(熱傳導效能)可以被有效提升。此外,由於透過“導熱絕緣層設置於導熱部上”的設計,在使用垂直式晶片時,也可於基板單元製做貫孔結構的散熱設計。In summary, the illuminating device provided by the embodiment of the present invention can plan the heat conduction path and the conductive path of the illuminating element through the design of the “thermally conductive insulating layer disposed on the heat conducting portion”, so that the heat emitting performance of the illuminating device of the present invention is Heat transfer efficiency) can be effectively improved. In addition, due to the design of the "thermally conductive insulating layer disposed on the heat conducting portion", when the vertical type wafer is used, the heat dissipation design of the through hole structure can also be made in the substrate unit.

為使能更進一步瞭解本發明之特徵及技術內容,請參閱以下有關本發明之詳細說明與附圖,然而所附圖式僅提供參考與說明用,並非用來對本發明加以限制者。For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

〔第一實施例〕[First Embodiment]

請參閱圖1A至圖1D所示,圖1A為導熱絕緣單元設置於發光單元底端的側視剖面示意圖,圖1B為基板單元的側視剖面示意圖,圖1C為基板單元的上視示意圖,圖1D為發光裝置的側視剖面示意圖。由上述圖中可知,本發明第一實施例提供一種發光裝置,其包括:一發光單元1、一導熱絕緣單元2、及一基板單元3。1A to FIG. 1D, FIG. 1A is a side cross-sectional view showing a heat conducting and insulating unit disposed at a bottom end of the light emitting unit, FIG. 1B is a side cross-sectional view of the substrate unit, and FIG. 1C is a top view of the substrate unit, FIG. It is a side cross-sectional view of the light-emitting device. As shown in the above figure, the first embodiment of the present invention provides a light emitting device comprising: a light emitting unit 1, a heat conducting and insulating unit 2, and a substrate unit 3.

首先,如圖1A所示,發光單元1包括至少一第一導電支架11、至少一第二導電支架12、一殼體14、至少一發光元件15、及一封裝膠體16。First, as shown in FIG. 1A, the light-emitting unit 1 includes at least one first conductive support 11, at least one second conductive support 12, a housing 14, at least one light-emitting element 15, and an encapsulant 16.

其中,第一導電支架11與第二導電支架12可彼此分離一預定距離且彼此鄰近,而且依據不同的設計需求,第 一導電支架11與第二導電支架12可選擇性的被分別定義為正極支架與負極支架,或者被分別定義為負極支架與正極支架。第一導電支架11具有至少一從殼體14裸露的第一導電部110及至少一從殼體14裸露且靠近發光元件15的導熱部111,且第二導電支架12具有至少一從殼體14裸露的第二導電部120,其中第一導電部110與第二導電部120可作為兩個提供給發光單元1進行導電用途的“電極路徑”,而導熱部111則因為非常靠近發光元件15,所以能夠提供給發光單元1最短的“散熱路徑”。The first conductive bracket 11 and the second conductive bracket 12 can be separated from each other by a predetermined distance and adjacent to each other, and according to different design requirements, A conductive support 11 and a second conductive support 12 are selectively defined as a positive support and a negative support, respectively, or as a negative support and a positive support, respectively. The first conductive support 11 has at least one first conductive portion 110 exposed from the housing 14 and at least one heat conducting portion 111 exposed from the housing 14 and close to the light emitting element 15 , and the second conductive bracket 12 has at least one slave housing 14 . The exposed second conductive portion 120, wherein the first conductive portion 110 and the second conductive portion 120 can serve as two "electrode paths" for conducting the conductive use to the light-emitting unit 1, and the heat-conductive portion 111 is very close to the light-emitting element 15, Therefore, it is possible to provide the shortest "heat dissipation path" to the light-emitting unit 1.

舉例來說,由於第一實施例採用一種四方平面無引腳封裝(Quad Flat No lead,QFN)形式的發光單元1,所以位於第一導電部110底部的一第一導電區域1100、位於第二導電部120底部的一第二導電區域1200、及位於導熱部111底部的一導熱區域1110皆可從殼體14的底面1400裸露,且第一導電部110的第一導電區域1100、第二導電部120的第二導電區域1200、及導熱部111的導熱區域1110實質上可與殼體14的底面1400相互齊平。然而,本發明所使用的第一導電支架11與第二導電支架12不以上述所舉的例子為限制。For example, since the first embodiment adopts a light-emitting unit 1 in the form of a quad flat no-lead (QFN), a first conductive region 1100 located at the bottom of the first conductive portion 110 is located at the second A second conductive region 1200 at the bottom of the conductive portion 120 and a heat conductive region 1110 at the bottom of the heat conducting portion 111 can be exposed from the bottom surface 1400 of the housing 14 , and the first conductive region 1100 of the first conductive portion 110 and the second conductive portion The second conductive region 1200 of the portion 120 and the heat conductive region 1110 of the heat transfer portion 111 are substantially flush with the bottom surface 1400 of the housing 14. However, the first conductive support 11 and the second conductive support 12 used in the present invention are not limited by the above-mentioned examples.

再者,殼體14可用來連結第一導電支架11與第二導電支架12,以使得第一導電支架11與第二導電支架12彼此間的相對位置被固定。此外,殼體14介於第一導電支架11與第二導電支架12之間,且殼體14可為一絕緣材料,以用於將第一導電支架11和第二導電支架12兩者彼此絕緣。舉例來說,殼體14可以被設計成一圍繞發光元件15的環形反射框體,以使得發光元件15所投射出的光束( 圖未示)可經由位於殼體14內部的反光表面來產生聚光效果。然而,本發明所使用的殼體14不以上述所舉的例子為限制。Furthermore, the housing 14 can be used to join the first conductive bracket 11 and the second conductive bracket 12 such that the relative positions of the first conductive bracket 11 and the second conductive bracket 12 are fixed to each other. In addition, the housing 14 is interposed between the first conductive bracket 11 and the second conductive bracket 12, and the housing 14 may be an insulating material for insulating both the first conductive bracket 11 and the second conductive bracket 12 from each other. . For example, the housing 14 can be designed as an annular reflective frame surrounding the light-emitting element 15 such that the light beam projected by the light-emitting element 15 ( Not shown) a concentrating effect can be produced via a reflective surface located inside the housing 14. However, the housing 14 used in the present invention is not limited to the above-exemplified examples.

此外,發光元件15可為一垂直式的發光二極體裸晶片,發光元件15可設置於第一導電支架11上且可電性連接於第一導電支架11與第二導電支架12。舉例來說,發光元件15的底面可直接電性接觸第一導電支架11,且發光元件15的頂面可透過一導線W(例如金屬導線),以電性連接於第二導電支架12。由於第一導電支架11帶電的關係,所以不能在基板單元3設置貫穿式導熱結構35,其原因在於基板單元3設置貫穿式導熱結構35會破壞導電路徑。但藉由設置絕緣導熱層20於第一導電支架11的導熱部111,故在第一導電支架11的導熱部111是不帶電的,因此可於基板單元3設置貫穿式導熱結構35來加強散熱,提升發光裝置的散熱效能。然而,本發明所使用的發光元件15不以上述所舉的例子為限制,發光元件15亦可為水平式的發光二極體裸晶片。因此,本發明可透過“導熱絕緣層20設置於導熱部111上”的設計,任何發光二極體裸晶片皆可於基板單元3設置貫孔式導熱結構35,增加了晶片選擇的適應性。In addition, the light-emitting element 15 can be a vertical light-emitting diode bare chip, and the light-emitting element 15 can be disposed on the first conductive support 11 and electrically connected to the first conductive support 11 and the second conductive support 12. For example, the bottom surface of the light-emitting element 15 can directly electrically contact the first conductive support 11 , and the top surface of the light-emitting element 15 can be electrically connected to the second conductive support 12 through a wire W (for example, a metal wire). Since the first conductive support 11 is electrically charged, the through-type heat conductive structure 35 cannot be disposed on the substrate unit 3 because the through-heat conductive structure 35 of the substrate unit 3 breaks the conductive path. However, by providing the insulating and thermally conductive layer 20 on the heat conducting portion 111 of the first conductive support 11, the heat conducting portion 111 of the first conductive support 11 is uncharged, so that the through-type heat conducting structure 35 can be disposed on the substrate unit 3 to enhance heat dissipation. Improve the heat dissipation performance of the illuminating device. However, the light-emitting element 15 used in the present invention is not limited to the above-described example, and the light-emitting element 15 may be a horizontal light-emitting diode bare wafer. Therefore, the present invention can be designed such that the "thermally conductive insulating layer 20 is disposed on the heat conducting portion 111", and any light emitting diode bare wafer can be provided with the through hole heat conducting structure 35 on the substrate unit 3, which increases the adaptability of the wafer selection.

在一較佳實施例中,絕緣導熱層20僅僅設置於第一導電支架11的導熱部111上,並未設置於第一導電支架11和第二導電支架12的任何區域,規劃較佳的導電路徑和導熱路徑,以提高本發明發光裝置的發光效能。In a preferred embodiment, the insulating and thermally conductive layer 20 is disposed only on the heat conducting portion 111 of the first conductive support 11 and is not disposed on any of the first conductive support 11 and the second conductive support 12, and is preferably electrically conductive. Path and heat conduction path to improve the luminous efficacy of the illumination device of the present invention.

另外,封裝膠體16成形於由殼體14所圍成的容置空 間內以覆蓋發光元件15,其除了可用來保護完成打線後的發光元件15外,亦可用來改變發光單元1所投射出來的光形。舉例來說,封裝膠體16可呈現平面狀或凸透鏡狀…等等。此外,依據不同的設計需求,封裝膠體16可為一由矽膠或環氧樹脂所形成的透明膠體,或者封裝膠體16亦可為一由螢光粉與矽膠或一由螢光粉與環氧樹脂所混合而成的螢光膠體。當發光元件15為一可直接發出白色光源的白光發光二極體裸晶片且封裝膠體16為透明膠體時,發光元件15所產生的光束可經過透明膠體以投射出白色光源。當發光元件15為一藍色發光二極體裸晶片且封裝膠體16為螢光膠體時,發光元件15所產生的光束可經過螢光膠體以投射出白色光源。然而,本發明所使用的發光元件15與封裝膠體16不以上述所舉的例子為限制。In addition, the encapsulant 16 is formed in a space surrounded by the housing 14 In the meantime, the light-emitting element 15 is covered, which can be used to change the light shape projected by the light-emitting unit 1 in addition to the light-emitting element 15 which can be used to protect the finished wire. For example, the encapsulant 16 can be planar or convex lenticular...etc. In addition, according to different design requirements, the encapsulant 16 may be a transparent colloid formed of silicone or epoxy resin, or the encapsulant 16 may be a phosphor or a gel or a phosphor and epoxy. A blend of fluorescent colloids. When the light-emitting element 15 is a white light-emitting diode bare wafer that can directly emit a white light source and the encapsulant 16 is a transparent colloid, the light beam generated by the light-emitting element 15 can pass through the transparent colloid to project a white light source. When the light-emitting element 15 is a blue light-emitting diode bare wafer and the encapsulant 16 is a fluorescent colloid, the light beam generated by the light-emitting element 15 can pass through the phosphor colloid to project a white light source. However, the light-emitting element 15 and the encapsulant 16 used in the present invention are not limited to the above-exemplified examples.

再者,如圖1A所示,導熱絕緣單元2包括至少一預先設置於導熱部111上的導熱絕緣層20,且導熱絕緣層20可以完全覆蓋第一導電部110的導熱部111。舉例來說,導熱絕緣層20可直接透過塗佈、印刷、或任何其它的成形方式,以直接成形於導熱部111上(如圖1A所示)。另外,導熱絕緣層20可由導熱係數實質上介於120至500W/mK之間的導熱絕緣材料所製成,例如:氧化鋁、氮化鋁、或類鑽石碳(Diamond-Like Carbon,DLC)…等等。然而,本發明所使用的導熱絕緣層20不以上述所舉的例子為限制。Furthermore, as shown in FIG. 1A, the thermally conductive insulating unit 2 includes at least one thermally conductive insulating layer 20 previously disposed on the thermally conductive portion 111, and the thermally conductive insulating layer 20 may completely cover the thermally conductive portion 111 of the first electrically conductive portion 110. For example, the thermally conductive insulating layer 20 can be directly formed on the thermally conductive portion 111 (as shown in FIG. 1A) by direct application through coating, printing, or any other forming means. In addition, the thermally conductive insulating layer 20 may be made of a thermally conductive insulating material having a thermal conductivity substantially between 120 and 500 W/mK, such as alumina, aluminum nitride, or diamond-like carbon (DLC). and many more. However, the thermally conductive insulating layer 20 used in the present invention is not limited by the above-exemplified examples.

一般而言,製作殼體14的材料有環氧樹脂(epoxy)和矽膠(silicone)兩種,其導熱係數大約介於0.2至0.3W/mK之間,陶瓷材料的導熱係數大約介於2至40W/mK之間, 而類鑽石碳材料具有三維度的導熱係數,如在X方向,其導熱係數為475W/mK,在Y方向,其導熱係數為475W/mK,在Z方向,其導熱係數為120W/mK,故當選用類鑽石碳作為導熱絕緣層時,可大大地提升本發明發光裝置的散熱能力。In general, the material of the housing 14 is made of epoxy and silicone, and the thermal conductivity is about 0.2 to 0.3 W/mK, and the thermal conductivity of the ceramic material is about 2 to Between 40W/mK, The diamond-like carbon material has a three-dimensional thermal conductivity, such as a thermal conductivity of 475 W/mK in the X direction, a thermal conductivity of 475 W/mK in the Y direction, and a thermal conductivity of 120 W/mK in the Z direction. When diamond-like carbon is selected as the thermal conductive insulating layer, the heat dissipation capability of the light-emitting device of the present invention can be greatly improved.

此外,配合圖1B及圖1C所示,基板單元3包括一基板本體30、至少一第一電極層31、至少一第二電極層32、至少一頂端導熱層33、至少一底端導熱層34、及多個貫穿式導熱結構35。第一電極層31、第二電極層32、及頂端導熱層33皆設置於基板本體30的頂端,且頂端導熱層33可以位於第一電極層31與第二電極層32之間。第一電極層31、第二電極層32、及頂端導熱層33三者彼此絕緣且彼此分離一預定距離,而且依據不同的設計需求,第一電極層31與第二電極層32可選擇性的被分別定義為正電極與負電極,或者被分別定義為負電極與正電極。另外,底端導熱層34設置於基板本體30的底端且至少對應於頂端導熱層33。上述多個貫穿式導熱結構35貫穿基板本體30且連接於頂端導熱層33與底端導熱層34之間。In addition, as shown in FIG. 1B and FIG. 1C , the substrate unit 3 includes a substrate body 30 , at least one first electrode layer 31 , at least one second electrode layer 32 , at least one top heat conduction layer 33 , and at least one bottom heat conduction layer 34 . And a plurality of through heat conducting structures 35. The first electrode layer 31, the second electrode layer 32, and the top heat conduction layer 33 are all disposed at the top end of the substrate body 30, and the top heat conduction layer 33 may be located between the first electrode layer 31 and the second electrode layer 32. The first electrode layer 31, the second electrode layer 32, and the top heat conduction layer 33 are insulated from each other and separated from each other by a predetermined distance, and the first electrode layer 31 and the second electrode layer 32 are selectively different according to different design requirements. They are defined as a positive electrode and a negative electrode, respectively, or as a negative electrode and a positive electrode, respectively. In addition, the bottom heat conduction layer 34 is disposed at the bottom end of the substrate body 30 and at least corresponds to the top heat conduction layer 33. The plurality of through heat conducting structures 35 penetrate the substrate body 30 and are connected between the top heat conducting layer 33 and the bottom heat conducting layer 34.

舉例來說,第一電極層31、第二電極層32、頂端導熱層33、及底端導熱層34皆可為銅箔層。頂端導熱層33的上表面具有一位於第一電極層31與第二電極層32之間的接觸區33A。上述多個貫穿式導熱結構35設置於接觸區33A與底端導熱層34之間。再者,每一個貫穿式導熱結構35具有一貫穿基板本體30的貫穿孔35A及一用於完全填滿貫穿孔35A的導熱體35B,且導熱體35B連接於頂端導熱層33與底端導熱層34之間。因此,由於導熱體35B完 全填滿貫穿孔35A,所以每一個貫穿式導熱結構35能夠提供最佳的導熱速度及導熱效果。然而,本發明第一實施例所使用的基板單元3不以上述所舉的例子為限制。For example, the first electrode layer 31, the second electrode layer 32, the top thermally conductive layer 33, and the bottom thermally conductive layer 34 may each be a copper foil layer. The upper surface of the top heat conduction layer 33 has a contact region 33A between the first electrode layer 31 and the second electrode layer 32. The plurality of through heat conducting structures 35 are disposed between the contact region 33A and the bottom heat conducting layer 34. Furthermore, each of the through heat conducting structures 35 has a through hole 35A penetrating through the substrate body 30 and a heat conductor 35B for completely filling the through hole 35A, and the heat conductor 35B is connected to the top heat conducting layer 33 and the bottom heat conducting layer. Between 34. Therefore, since the heat conductor 35B is finished The through holes 35A are completely filled, so that each of the through heat conducting structures 35 can provide an optimum heat conduction speed and heat conduction effect. However, the substrate unit 3 used in the first embodiment of the present invention is not limited to the above-exemplified examples.

再者,配合圖1A、1B、及圖1D所示,當發光單元1設置於基板單元3上時(如圖1D所示),第一導電部110可對應於第一電極層31且電性連接於第一電極層31,第二導電部120可對應於第二電極層32且電性連接於第二電極層32,且導熱絕緣層20可對應於頂端導熱層33且設置於導熱部111與頂端導熱層33之間。舉例來說,第一導電部110及第二導電部120皆可透過相對應的錫膏S,以分別電性連接於第一電極層31及第二電極層32,且導熱絕緣層20亦可透過具有導熱功能的錫膏S,以設置於頂端導熱層33上。Furthermore, as shown in FIGS. 1A, 1B, and 1D, when the light emitting unit 1 is disposed on the substrate unit 3 (as shown in FIG. 1D), the first conductive portion 110 may correspond to the first electrode layer 31 and be electrically The first conductive layer 120 is connected to the second electrode layer 32 and electrically connected to the second electrode layer 32 , and the heat conductive insulating layer 20 can correspond to the top heat conductive layer 33 and be disposed on the heat conducting portion 111 . Between the top heat conducting layer 33 and the top. For example, the first conductive portion 110 and the second conductive portion 120 can pass through the corresponding solder paste S to be electrically connected to the first electrode layer 31 and the second electrode layer 32, respectively, and the thermal conductive layer 20 can also be The solder paste S having a heat conducting function is provided on the top heat conductive layer 33.

另外,配合圖1C與圖1D所示,由於上述具有較高導熱係數的導熱絕緣層20可直接設置於第一導電部110的導熱部111與頂端導熱層33的接觸區33A之間,所以發光元件15所產生的熱量(如圖1D中朝下的空白箭頭所示)可以經由導熱部111以傳遞至導熱絕緣層20,且導熱絕緣層20所吸收的熱量可以再依序經由頂端導熱層33的接觸區33A與上述多個貫穿式導熱結構35的導引,而有效率地傳遞至底端導熱層34來進行散熱。換言之,當上述具有較高導熱係數的導熱絕緣層20被設置於導熱部111與接觸區33A之間時,由於上述多個貫穿式導熱結構35被設置於頂端導熱層33的接觸區33A與底端導熱層34之間,所以從導熱絕緣層20傳遞至頂端導熱層33的接觸區33A的熱量可以經由上述多個貫穿式導熱結構35導引,而有效率地 傳遞至底端導熱層34來進行散熱。In addition, as shown in FIG. 1C and FIG. 1D, since the thermal conductive insulating layer 20 having a higher thermal conductivity can be directly disposed between the heat conducting portion 111 of the first conductive portion 110 and the contact region 33A of the top heat conductive layer 33, the light is emitted. The heat generated by the element 15 (shown by a downward arrow as shown in FIG. 1D) can be transmitted to the thermally conductive insulating layer 20 via the heat conducting portion 111, and the heat absorbed by the thermally conductive insulating layer 20 can be sequentially passed through the top thermally conductive layer 33. The contact area 33A and the plurality of through-type heat conducting structures 35 are guided and efficiently transferred to the bottom heat conducting layer 34 for heat dissipation. In other words, when the above-described thermally conductive insulating layer 20 having a higher thermal conductivity is disposed between the heat conducting portion 111 and the contact region 33A, since the plurality of through heat conducting structures 35 are disposed at the contact region 33A and the bottom of the top heat conducting layer 33 Between the end heat conducting layers 34, heat transferred from the thermally conductive insulating layer 20 to the contact region 33A of the top heat conducting layer 33 can be guided through the plurality of through heat conducting structures 35, and efficiently It is transferred to the bottom heat conducting layer 34 for heat dissipation.

由於導熱絕緣層20設置於第一導電支架11的導熱部111上,故可利用導熱絕緣層20的絕緣特性,阻隔電流往導熱部111下方流動。另外,也可利用導熱絕緣層20的導熱特性,提供給發光元件15最短的導熱路徑,故導熱絕緣層20的設置可自由規劃導熱路徑和導電路徑,進而提升發光裝置1的發光效率。Since the thermally conductive insulating layer 20 is disposed on the heat conducting portion 111 of the first conductive support 11, the insulating property of the thermally conductive insulating layer 20 can be utilized to block the current from flowing below the thermally conductive portion 111. In addition, the heat conduction property of the heat conductive insulating layer 20 can be utilized to provide the shortest heat conduction path to the light emitting element 15. Therefore, the heat conductive insulating layer 20 can be disposed to freely plan the heat conduction path and the conductive path, thereby improving the light emitting efficiency of the light emitting device 1.

綜上所述,發光元件15所產生的熱量(如圖1D中朝下的空白箭頭所示)可以依序經由第一導電支架11的導熱部111、導熱絕緣層20、錫膏S、頂端導熱層33的接觸區33A、及上述多個貫穿式導熱結構35的導引,而有效率地從發光元件15傳遞至底端導熱層34來進行散熱。換言之,本發明透過上述具有較高導熱係數的導熱絕緣層20的使用,以使得發光元件15所產生的熱量可有效率地從第一導電支架11的導熱部111傳導至頂端導熱層33的接觸區33A。然後,本發明再透過上述多個貫穿式導熱結構35的使用,以使得被頂端導熱層33的接觸區33A所吸收的熱量可以有效率地傳導至底端導熱層34來進行散熱。In summary, the heat generated by the light-emitting element 15 (as indicated by the blank arrow pointing downward in FIG. 1D) can be thermally transmitted through the heat conducting portion 111 of the first conductive support 11, the thermal conductive insulating layer 20, the solder paste S, and the top end. The contact region 33A of the layer 33 and the plurality of through-type heat conducting structures 35 are guided to be efficiently transferred from the light-emitting element 15 to the bottom heat-conducting layer 34 for heat dissipation. In other words, the present invention transmits the above-described heat conductive insulating layer 20 having a higher thermal conductivity so that the heat generated by the light-emitting element 15 can be efficiently conducted from the heat conducting portion 111 of the first conductive support 11 to the contact of the top heat-conducting layer 33. Zone 33A. The present invention then re-uses the use of the plurality of through-heat conducting structures 35 described above such that heat absorbed by the contact regions 33A of the top thermally conductive layer 33 can be efficiently conducted to the bottom thermally conductive layer 34 for heat dissipation.

因此,本發明可配合導熱絕緣層20與多個貫穿式導熱結構35的使用,以有效率地的提升發光裝置的散熱效果。尤其是,如第一實施例所示,當發光單元1採用“垂直晶片”形式的發光元件15時,由於本發明配合上述能夠提供給發光單元1最短的導熱路徑至基板單元3及上述具有較高導熱係數的導熱絕緣層20的使用,所以本發明發光裝置的散熱效果更為明顯。Therefore, the present invention can be used in conjunction with the use of the thermally conductive insulating layer 20 and the plurality of through heat conducting structures 35 to efficiently enhance the heat dissipation effect of the light emitting device. In particular, as shown in the first embodiment, when the light-emitting unit 1 adopts the light-emitting element 15 in the form of a "vertical wafer", the present invention cooperates with the shortest heat conduction path that can be provided to the light-emitting unit 1 to the substrate unit 3 and has the above-mentioned The use of the thermally conductive insulating layer 20 having a high thermal conductivity makes the heat dissipation effect of the illuminating device of the present invention more remarkable.

〔第二實施例〕[Second embodiment]

請參閱圖2所示,本發明第二實施例提供另一種基板單元3。由圖2與圖1B的比較可知,本發明第二實施例與第一實施例最大的不同在於:在第二實施例中,底端導熱層34的面積大於頂端導熱層33的面積,以用於增加本發明整體的散熱效果。舉例來說,底端導熱層34可以覆蓋基板本體30的整個底面1400,因此當頂端導熱層33所吸收的熱量經過上述多個貫穿式導熱結構35而傳導至底端導熱層34時,較大面積的底端導熱層34可以提供更好的散熱能力。Referring to FIG. 2, a second embodiment of the present invention provides another substrate unit 3. 2 and FIG. 1B, the second embodiment of the present invention is different from the first embodiment in that, in the second embodiment, the area of the bottom heat conduction layer 34 is larger than the area of the top heat conduction layer 33. To increase the overall heat dissipation effect of the present invention. For example, the bottom heat conducting layer 34 can cover the entire bottom surface 1400 of the substrate body 30, so that when the heat absorbed by the top heat conducting layer 33 is conducted to the bottom heat conducting layer 34 through the plurality of through heat conducting structures 35, the larger The bottom thermally conductive layer 34 of the area provides better heat dissipation.

〔第三實施例〕[Third embodiment]

請參閱圖3所示,本發明第三實施例提供再一種基板單元3。由圖3與圖1B的比較可知,本發明第三實施例與第一實施例最大的不同在於:在第三實施例中,每一個貫穿式導熱結構35具有一貫穿基板本體30的貫穿孔35A及一用於部分填滿貫穿孔35A的導熱體35B,且導熱體35B連接於頂端導熱層33與底端導熱層34之間。舉例來說,導熱體35B並未完全填滿貫穿孔35A,而只是成形在貫穿孔35A的內表面上而已。因此,由於導熱體35B只有部分填滿貫穿孔35A,所以在每一個貫穿式導熱結構35的製作上,可以有效降低導熱體35B所使用的材料成本。Referring to FIG. 3, a third embodiment of the present invention provides a further substrate unit 3. 3 and FIG. 1B, the third embodiment of the present invention is different from the first embodiment in that, in the third embodiment, each of the through heat conducting structures 35 has a through hole 35A penetrating through the substrate body 30. And a heat conductor 35B for partially filling the through hole 35A, and the heat conductor 35B is connected between the top heat conduction layer 33 and the bottom heat conduction layer 34. For example, the heat conductor 35B does not completely fill the through hole 35A, but is formed only on the inner surface of the through hole 35A. Therefore, since the heat conductor 35B only partially fills the through hole 35A, the material cost used for the heat conductor 35B can be effectively reduced in the fabrication of each through heat conducting structure 35.

〔第四實施例〕[Fourth embodiment]

請參閱圖4所示,本發明第四實施例提供再一種基板單元3。由圖4與圖1C的比較可知,本發明第四實施例與第一實施例最大的不同在於:在第四實施例中,頂端導熱層33的上表面具有一位於第一電極層31與第二電極層32之間的接觸區33A及至少兩個分別連接於接觸區33A的兩 相反側端的延伸區33B,且上述多個貫穿式導熱結構35設置於接觸區33A與底端導熱層34之間。接觸區33A和延伸區33B可聯合成一I型或H型的形狀。換言之,由於第四實施例增加兩個延伸區33B的設計,所以頂端導熱層33的面積將大於導熱絕緣層20的面積。因此,第四實施例可以透過“頂端導熱層33的面積大於導熱絕緣層20的面積”的設計,以使得本發明能夠提供更好的導熱效果。Referring to FIG. 4, a fourth embodiment of the present invention provides a further substrate unit 3. 4 and FIG. 1C, the fourth embodiment of the present invention is different from the first embodiment in that, in the fourth embodiment, the upper surface of the top heat conduction layer 33 has a first electrode layer 31 and a first electrode layer. a contact region 33A between the two electrode layers 32 and at least two two connected to the contact region 33A, respectively The opposite side end extension 33B, and the plurality of through heat conduction structures 35 are disposed between the contact area 33A and the bottom end heat conduction layer 34. The contact region 33A and the extension region 33B may be combined into a shape of an I-type or an H-shape. In other words, since the fourth embodiment increases the design of the two extension regions 33B, the area of the top heat conduction layer 33 will be larger than the area of the thermally conductive insulating layer 20. Therefore, the fourth embodiment can transmit a design in which the area of the top heat conduction layer 33 is larger than the area of the heat conductive insulation layer 20, so that the present invention can provide a better heat conduction effect.

〔第五實施例〕[Fifth Embodiment]

請參閱圖5所示,本發明第五實施例提供再一種基板單元3。由圖5與圖4的比較可知,本發明第五實施例與第四實施例最大的不同在於:在第五實施例中,上述多個貫穿式導熱結構35可同時設置於接觸區33A與底端導熱層34之間、及設置於每一個延伸區33B與底端導熱層34之間。換言之,由於第五實施例將貫穿式導熱結構35同時設置於每一個延伸區33B與底端導熱層34之間,所以頂端導熱層33與底端導熱層34之間將有更多的導熱路徑。因此,第五實施例可以透過“增加位於頂端導熱層33與底端導熱層34之間之貫穿式導熱結構35的數量”的設計,以使得本發明能夠提供更好的導熱效果。Referring to FIG. 5, a fifth embodiment of the present invention provides a further substrate unit 3. It can be seen from the comparison between FIG. 5 and FIG. 4 that the fifth embodiment of the present invention differs greatly from the fourth embodiment in that, in the fifth embodiment, the plurality of through-type heat conducting structures 35 can be simultaneously disposed on the contact area 33A and the bottom. The end heat conducting layers 34 are disposed between each of the extending regions 33B and the bottom end heat conducting layer 34. In other words, since the fifth embodiment has the through-type heat conducting structure 35 disposed between each of the extending regions 33B and the bottom heat conducting layer 34, there is more heat conduction path between the top heat conducting layer 33 and the bottom heat conducting layer 34. . Therefore, the fifth embodiment can transmit a design of "increasing the number of through-type heat conducting structures 35 between the top heat conducting layer 33 and the bottom heat conducting layer 34" so that the present invention can provide a better heat conducting effect.

〔第六實施例〕[Sixth embodiment]

請參閱圖6A及圖6B所示,本發明第六實施例提供另一種發光裝置,其包括:一發光單元1、一導熱絕緣單元2、及一基板單元3。由圖6A與圖1A的比較、及圖6B與圖1D的比較可知,本發明第六實施例與第一實施例最大的不同在於:在第六實施例中,由於第六實施例採用一種表面黏著型(Surface Mounted Device,SMD)形式的發光單 元1,所以第一導電部110與第二導電部120可分別從殼體14的兩相反側端1401外露。舉例來說,導熱部111的導熱區域1110可從殼體14的底面1400裸露,且第一導電部110的第一導電區域1100、第二導電部120的第二導電區域1200、及導熱部111的導熱區域1110實質上可與殼體14的底面1400齊平。然而,本發明所使用的發光單元1不以上述所舉的例子為限制。Referring to FIG. 6A and FIG. 6B, a sixth embodiment of the present invention provides another illuminating device, comprising: a light emitting unit 1, a heat conducting and insulating unit 2, and a substrate unit 3. From the comparison of FIG. 6A with FIG. 1A and the comparison of FIG. 6B with FIG. 1D, it is understood that the sixth embodiment of the present invention is most different from the first embodiment in that, in the sixth embodiment, since the sixth embodiment adopts a surface Light-emitting form in the form of a Surface Mounted Device (SMD) Element 1, so that the first conductive portion 110 and the second conductive portion 120 can be exposed from the opposite side ends 1401 of the housing 14, respectively. For example, the heat conductive portion 1110 of the heat conducting portion 111 can be exposed from the bottom surface 1400 of the housing 14 , and the first conductive region 1100 of the first conductive portion 110 , the second conductive region 1200 of the second conductive portion 120 , and the heat conducting portion 111 The thermally conductive region 1110 can be substantially flush with the bottom surface 1400 of the housing 14. However, the light-emitting unit 1 used in the present invention is not limited to the above-exemplified examples.

〔第七實施例〕[Seventh embodiment]

請參閱圖7A至圖7D所示,本發明第七實施例提供另一種發光裝置,其與上述其它實施例最大的不同在於:增加了至少一第三導電支架13的設計,且殼體14介於第一導電支架11、第二導電支架12與第三導電支架13之間,其中由於發光元件15可透過導線W以電性連接於第二導電支架12,所以發光元件15可電性連接於第一導電支架11與第二導電支架12。因此,本發明的導熱絕緣層20除了可以應用於具有至少兩個導電支架的發光單元1外,亦可應用於具有至少三個導電支架的發光單元1。Referring to FIG. 7A to FIG. 7D, a seventh embodiment of the present invention provides another illuminating device, which is different from the other embodiments described above in that the design of at least one third conductive bracket 13 is added, and the housing 14 is integrated. The light-emitting element 15 is electrically connected to the first conductive support 11 , the second conductive support 12 and the third conductive support 13 , wherein the light-emitting element 15 is electrically connected to the second conductive support 12 through the wire W. The first conductive bracket 11 and the second conductive bracket 12 are provided. Therefore, the thermally conductive insulating layer 20 of the present invention can be applied not only to the light-emitting unit 1 having at least two conductive supports but also to the light-emitting unit 1 having at least three conductive supports.

再者,配合圖7B、圖7C與圖7D所示,根據用於提供導電路徑的第一導電支架11的第一導電部110與第二導電支架12的第二導電部120所設計的位置及用於提供最短散熱路徑的導熱部111所設計的位置,第一電極層31、第二電極層32、及頂端導熱層33的位置可以相對應的來作調整。舉例來說,依據第七實施例的第一導電部110、第二導電部120、及導熱部111所設計的位置,第一電極層31與第二電極層32可設置在基板本體30上的同一側邊位置,而導熱絕緣層20設置於導熱部111上,頂端導熱 層33則可設置在基板本體30上的另一側邊位置。Furthermore, as shown in FIG. 7B, FIG. 7C and FIG. 7D, the position of the first conductive portion 110 of the first conductive support 11 for providing the conductive path and the second conductive portion 120 of the second conductive support 12 is designed and The position of the heat conducting portion 111 for providing the shortest heat dissipation path, the positions of the first electrode layer 31, the second electrode layer 32, and the top heat conducting layer 33 can be adjusted correspondingly. For example, according to the positions of the first conductive portion 110, the second conductive portion 120, and the heat conducting portion 111 of the seventh embodiment, the first electrode layer 31 and the second electrode layer 32 may be disposed on the substrate body 30. The same side position, and the thermal conductive layer 20 is disposed on the heat conducting portion 111, and the top end conducts heat. Layer 33 can then be disposed at the other side location on substrate body 30.

另外,如圖7D所示,頂端導熱層33的面積可以大於或等於導熱絕緣層20的面積,而且當頂端導熱層33的面積愈大時,則所能提供的散熱效果也愈好。當然,與上述其它實施例一樣,第七實施例亦可配合多個貫穿式導熱結構35及較大面積的底端導熱層34來使用,以用來增加本發明的散熱效果。貫穿式導熱結構35可僅僅位於導熱絕緣層20的下方,或者是貫穿式導熱結構35可位於整個頂端導熱層33的下方。然而,貫穿式導熱結構35所設置的區域亦可依據不同的設計需求而有所變換,所以不以上述為限。In addition, as shown in FIG. 7D, the area of the top heat conduction layer 33 may be greater than or equal to the area of the heat conductive insulating layer 20, and the larger the area of the top heat conduction layer 33, the better the heat dissipation effect can be provided. Of course, as with the other embodiments described above, the seventh embodiment can also be used with a plurality of through heat conducting structures 35 and a larger area of the bottom heat conducting layer 34 for increasing the heat dissipation effect of the present invention. The through heat conducting structure 35 may be located only below the thermally conductive insulating layer 20, or the through heat conducting structure 35 may be located below the entire top thermally conductive layer 33. However, the area in which the through-type heat conducting structure 35 is disposed may also be changed according to different design requirements, and thus is not limited to the above.

〔第八實施例〕[Eighth Embodiment]

請參閱圖8A至圖8B所示,本發明第八實施例提供再一種發光裝置,其與第七實施例最大的不同在於:發光元件15可透過導線W以電性連接於第三導電支架13,所以發光元件15可電性連接於第一導電支架11與第三導電支架13,且第三導電支架13具有一第三導電部130。因此,依據第八實施例的第一導電部110、第三導電部130、及導熱部111所設計的位置,導熱絕緣層20設置於導熱部111上,第一電極層31與第二電極層32可分別設置在基板本體30上的兩相對側邊位置,而頂端導熱層33則可設置在基板本體30上且大致上位於第一電極層31與第二電極層32之間的位置。換言之,當本發明的導熱絕緣層20應用於具有至少三個導電支架的發光單元1時,可依據發光元件15透過導線W以電性連接於第二導電支架12或第三導電支架13的不同,來規劃第一電極層31、第二電極 層32、及頂端導熱層33在基板本體30上的位置。Referring to FIG. 8A to FIG. 8B , an eighth embodiment of the present invention provides a further illuminating device, which is the most different from the seventh embodiment in that the illuminating element 15 is electrically connected to the third conductive bracket 13 through the wire W. Therefore, the light-emitting element 15 is electrically connected to the first conductive support 11 and the third conductive support 13 , and the third conductive support 13 has a third conductive portion 130 . Therefore, according to the positions of the first conductive portion 110, the third conductive portion 130, and the heat conducting portion 111 of the eighth embodiment, the heat conductive insulating layer 20 is disposed on the heat conducting portion 111, the first electrode layer 31 and the second electrode layer. 32 may be respectively disposed at two opposite side positions on the substrate body 30, and the top heat conduction layer 33 may be disposed on the substrate body 30 and substantially at a position between the first electrode layer 31 and the second electrode layer 32. In other words, when the thermally conductive insulating layer 20 of the present invention is applied to the light-emitting unit 1 having at least three conductive supports, the light-emitting element 15 can be electrically connected to the second conductive support 12 or the third conductive support 13 according to the light-transmitting element 15 . To plan the first electrode layer 31 and the second electrode The layer 32 and the position of the top thermally conductive layer 33 on the substrate body 30.

另外,如圖8B所示,頂端導熱層33的面積可以大於或等於導熱絕緣層20的面積,而且當頂端導熱層33的面積愈大時,則所能提供的散熱效果也愈好。當然,與上述其它實施例一樣,第八實施例亦可配合多個貫穿式導熱結構35及較大面積的底端導熱層34來使用,以用來增加本發明的散熱效果。貫穿式導熱結構35可僅僅位於導熱絕緣層20的下方,或者是貫穿式導熱結構35可位於整個頂端導熱層33的下方。然而,貫穿式導熱結構35所設置的區域亦可依據不同的設計需求而有所變換,所以不以上述為限。In addition, as shown in FIG. 8B, the area of the top heat conduction layer 33 may be greater than or equal to the area of the heat conductive insulating layer 20, and the larger the area of the top heat conduction layer 33, the better the heat dissipation effect can be provided. Of course, as with the other embodiments described above, the eighth embodiment can also be used with a plurality of through heat conducting structures 35 and a larger area of the bottom heat conducting layer 34 for increasing the heat dissipation effect of the present invention. The through heat conducting structure 35 may be located only below the thermally conductive insulating layer 20, or the through heat conducting structure 35 may be located below the entire top thermally conductive layer 33. However, the area in which the through-type heat conducting structure 35 is disposed may also be changed according to different design requirements, and thus is not limited to the above.

〔實施例的可能功效〕[Possible effects of the examples]

綜上所述,本發明實施例所提供的發光裝置,其可透過“導熱絕緣層設置於導熱部上”的設計,規劃發光元件的導熱路徑及導電路徑,使得本發明發光裝置的散熱效能(熱傳導效能)可以被有效提升。再者,習知技術中,僅在使用水平式晶片時,才能在基板單元設置貫穿式導熱結構,故將絕緣導熱層設置於第一導電支架下方,進一步增加了晶片選擇的適應性。無論是水平式晶片或垂直式晶片,皆可於第一導電支架下方設置貫穿式導熱結構,來提升發光裝置的散熱能力。In summary, the illuminating device provided by the embodiment of the present invention can plan the heat conduction path and the conductive path of the illuminating element through the design of the “thermally conductive insulating layer disposed on the heat conducting portion”, so that the heat emitting performance of the illuminating device of the present invention is Heat transfer efficiency) can be effectively improved. Furthermore, in the prior art, the through-type heat-conducting structure can be disposed on the substrate unit only when the horizontal wafer is used, so that the insulating and thermally conductive layer is disposed under the first conductive support, further increasing the adaptability of the wafer selection. Whether it is a horizontal wafer or a vertical wafer, a through-type heat conduction structure may be disposed under the first conductive bracket to improve the heat dissipation capability of the light-emitting device.

以上所述僅為本發明之較佳可行實施例,非因此侷限本發明之專利範圍,故舉凡運用本發明說明書及圖式內容所為之等效技術變化,均包含於本發明之範圍內。The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalents of the invention are included in the scope of the invention.

1‧‧‧發光單元1‧‧‧Lighting unit

11‧‧‧第一導電支架11‧‧‧First conductive bracket

110‧‧‧第一導電部110‧‧‧First Conductive Department

1100‧‧‧第一導電區域1100‧‧‧First conductive area

111‧‧‧導熱部111‧‧‧Transfer Department

1110‧‧‧導熱區域1110‧‧‧ Heat conduction area

12‧‧‧第二導電支架12‧‧‧Second conductive bracket

120‧‧‧第二導電部120‧‧‧Second Conductive Department

1200‧‧‧第二導電區域1200‧‧‧Second conductive area

13‧‧‧第三導電支架13‧‧‧ Third conductive bracket

130‧‧‧第三導電部130‧‧‧ Third Conductive Department

14‧‧‧殼體14‧‧‧Shell

1400‧‧‧底面1400‧‧‧ bottom

1401‧‧‧側端1401‧‧‧ side

15‧‧‧發光元件15‧‧‧Lighting elements

16‧‧‧封裝膠體16‧‧‧Package colloid

2‧‧‧導熱絕緣單元2‧‧‧thermal insulation unit

20‧‧‧導熱絕緣層20‧‧‧ Thermal insulation

3‧‧‧基板單元3‧‧‧Substrate unit

30‧‧‧基板本體30‧‧‧Substrate body

31‧‧‧第一電極層31‧‧‧First electrode layer

32‧‧‧第二電極層32‧‧‧Second electrode layer

33‧‧‧頂端導熱層33‧‧‧Top thermal layer

33A‧‧‧接觸區33A‧‧‧Contact area

33B‧‧‧延伸區33B‧‧‧Extension

34‧‧‧底端導熱層34‧‧‧Bottom heat conduction layer

35‧‧‧貫穿式導熱結構35‧‧‧through heat conduction structure

35A‧‧‧貫穿孔35A‧‧‧through holes

35B‧‧‧導熱體35B‧‧‧ Thermal Conductor

W‧‧‧導線W‧‧‧ wire

S‧‧‧錫膏S‧‧‧ solder paste

圖1A為本發明第一實施例的導熱絕緣單元設置於發光單元 底端的側視剖面示意圖。1A is a heat conduction and insulation unit according to a first embodiment of the present invention, which is disposed on a light emitting unit A side cross-sectional view of the bottom end.

圖1B為本發明第一實施例的基板單元的側視剖面示意圖。1B is a side cross-sectional view of a substrate unit according to a first embodiment of the present invention.

圖1C為本發明第一實施例的基板單元的上視示意圖。1C is a top plan view of a substrate unit according to a first embodiment of the present invention.

圖1D為本發明第一實施例的發光裝置的側視剖面示意圖。1D is a side cross-sectional view of a light emitting device according to a first embodiment of the present invention.

圖2為本發明第二實施例的基板單元的側視剖面示意圖。2 is a side cross-sectional view showing a substrate unit of a second embodiment of the present invention.

圖3為本發明第三實施例的基板單元的側視剖面示意圖。3 is a side cross-sectional view showing a substrate unit of a third embodiment of the present invention.

圖4為本發明第四實施例的基板單元的上視示意圖。4 is a top plan view of a substrate unit according to a fourth embodiment of the present invention.

圖5為本發明第五實施例的基板單元的上視示意圖。Figure 5 is a top plan view of a substrate unit in accordance with a fifth embodiment of the present invention.

圖6A為本發明第六實施例的導熱絕緣單元設置於發光單元底端的側視剖面示意圖。6A is a side cross-sectional view showing the heat conducting and insulating unit of the sixth embodiment of the present invention disposed at the bottom end of the light emitting unit.

圖6B為本發明第六實施例的發光裝置的側視剖面示意圖。6B is a side cross-sectional view of a light emitting device according to a sixth embodiment of the present invention.

圖7A為本發明第七實施例的第一、二、三導電支架的立體示意圖。7A is a perspective view of a first, second, and third conductive bracket according to a seventh embodiment of the present invention.

圖7B為本發明第七實施例的發光單元的立體示意圖(移除封裝膠體後)。FIG. 7B is a schematic perspective view of a light emitting unit according to a seventh embodiment of the present invention (after removing the encapsulant).

圖7C為本發明第七實施例的導熱絕緣單元設置於發光單元底端的立體示意圖。7C is a perspective view showing the heat conducting and insulating unit of the seventh embodiment of the present invention disposed at the bottom end of the light emitting unit.

圖7D為本發明第七實施例的導熱絕緣單元設置於基板單元頂端的上視示意圖。7D is a top plan view showing the heat conducting and insulating unit of the seventh embodiment of the present invention disposed at the top end of the substrate unit.

圖8A為本發明第八實施例的發光單元的立體示意圖(移除封裝膠體後)。FIG. 8A is a schematic perspective view of a light emitting unit according to an eighth embodiment of the present invention (after removing the encapsulant).

圖8B為本發明第八實施例的導熱絕緣單元設置於基板單元頂端的上視示意圖。8B is a top plan view showing the heat conducting and insulating unit of the eighth embodiment of the present invention disposed at the top end of the substrate unit.

1‧‧‧發光單元1‧‧‧Lighting unit

11‧‧‧第一導電支架11‧‧‧First conductive bracket

110‧‧‧第一導電部110‧‧‧First Conductive Department

1100‧‧‧第一導電區域1100‧‧‧First conductive area

111‧‧‧導熱部111‧‧‧Transfer Department

1110‧‧‧導熱區域1110‧‧‧ Heat conduction area

12‧‧‧第二導電支架12‧‧‧Second conductive bracket

120‧‧‧第二導電部120‧‧‧Second Conductive Department

1200‧‧‧第二導電區域1200‧‧‧Second conductive area

14‧‧‧殼體14‧‧‧Shell

1400‧‧‧底面1400‧‧‧ bottom

15‧‧‧發光元件15‧‧‧Lighting elements

16‧‧‧封裝膠體16‧‧‧Package colloid

2‧‧‧導熱絕緣單元2‧‧‧thermal insulation unit

20‧‧‧導熱絕緣層20‧‧‧ Thermal insulation

3‧‧‧基板單元3‧‧‧Substrate unit

30‧‧‧基板本體30‧‧‧Substrate body

31‧‧‧第一電極層31‧‧‧First electrode layer

32‧‧‧第二電極層32‧‧‧Second electrode layer

33‧‧‧頂端導熱層33‧‧‧Top thermal layer

34‧‧‧底端導熱層34‧‧‧Bottom heat conduction layer

35‧‧‧貫穿式導熱結構35‧‧‧through heat conduction structure

35A‧‧‧貫穿孔35A‧‧‧through holes

35B‧‧‧導熱體35B‧‧‧ Thermal Conductor

W‧‧‧導線W‧‧‧ wire

S‧‧‧錫膏S‧‧‧ solder paste

Claims (12)

一種四方平面無引腳封裝(QFN)形式的發光裝置,其包括:一發光單元,其包括至少一第一導電支架、至少一鄰近上述至少一第一導電支架的第二導電支架、一介於上述至少一第一導電支架與上述至少一第二導電支架之間的殼體、及至少一設置於上述至少一第一導電支架上的發光元件,其中上述至少一第一導電支架具有至少一從該殼體裸露的第一導電部及至少一從該殼體裸露的導熱部,且上述至少一第二導電支架具有至少一從該殼體裸露的第二導電部,該第一導電部的底部具有一第一導電區域,該第二導電部的底部具有一第二導電區域,該導熱部的底部具有一第一導熱區域,該第一導電區域、該第二導電區域與該第一導熱區域與該殼體的底面齊平;以及一導熱絕緣單元,其包括至少一設置於上述至少一導熱部上的導熱絕緣層。 A light emitting device in the form of a quad flat no-lead package (QFN), comprising: a light emitting unit comprising at least one first conductive support, at least one second conductive support adjacent to the at least one first conductive support, a housing between the first conductive bracket and the at least one second conductive bracket, and at least one light emitting component disposed on the at least one first conductive bracket, wherein the at least one first conductive bracket has at least one a first conductive portion exposed by the housing and at least one heat conducting portion exposed from the housing, and the at least one second conductive bracket has at least one second conductive portion exposed from the housing, the bottom portion of the first conductive portion having a first conductive region, a bottom portion of the second conductive portion has a second conductive region, a bottom portion of the heat conducting portion has a first heat conducting region, the first conductive region, the second conductive region and the first heat conducting region The bottom surface of the housing is flush; and a thermally conductive insulating unit includes at least one thermally conductive insulating layer disposed on the at least one thermally conductive portion. 如申請專利範圍第1項所述之發光裝置,更進一步包括:一基板單元,其包括一基板本體、至少一設置於該基板本體頂端的第一電極層、至少一設置於該基板本體頂端的第二電極層、至少一設置於該基板本體頂端的頂端導熱層、至少一設置於該基板本體底端且對應於上述至少一頂端導熱層的底端導熱層、及多個貫穿該基板本體且連接於上述至少一頂端導熱層與上述至少一底端導熱層之間的貫穿式導熱結構。 The illuminating device of claim 1, further comprising: a substrate unit comprising a substrate body, at least one first electrode layer disposed on a top end of the substrate body, and at least one disposed on a top end of the substrate body a second electrode layer, at least one top heat conducting layer disposed on the top end of the substrate body, at least one bottom heat conducting layer disposed on the bottom end of the substrate body and corresponding to the at least one top heat conducting layer, and a plurality of through the substrate body And a through heat conducting structure connected between the at least one top heat conducting layer and the at least one bottom heat conducting layer. 如申請專利範圍第2項所述之發光裝置,其中該發光單 元設置於該基板單元上,上述至少一發光元件電性連接於上述至少一第一導電支架與上述至少一第二導電支架,上述至少一第一導電部對應於上述至少一第一電極層且電性連接於上述至少一第一電極層,上述至少一第二導電部對應於上述至少一第二電極層且電性連接於上述至少一第二電極層,且上述至少一導熱絕緣層對應於上述至少一頂端導熱層且設置於上述至少一導熱部與上述至少一頂端導熱層之間。 The illuminating device of claim 2, wherein the illuminating unit The at least one light-emitting element is electrically connected to the at least one first conductive support and the at least one second conductive support, and the at least one first conductive portion corresponds to the at least one first electrode layer. Electrically connecting to the at least one first electrode layer, the at least one second conductive portion corresponding to the at least one second electrode layer and electrically connected to the at least one second electrode layer, and the at least one thermally conductive insulating layer corresponds to The at least one top heat conducting layer is disposed between the at least one heat conducting portion and the at least one top heat conducting layer. 如申請專利範圍第2項所述之發光裝置,其中上述至少一頂端導熱層的上表面具有一位於上述至少一第一電極層與上述至少一第二電極層之間的接觸區及至少兩個分別連接於該接觸區的兩相反側端的延伸區,且上述至少一導熱絕緣層設置於上述至少一導熱部與該接觸區之間。 The illuminating device of claim 2, wherein the upper surface of the at least one top heat conducting layer has a contact area between the at least one first electrode layer and the at least one second electrode layer and at least two And extending to the opposite ends of the contact regions, and the at least one thermally conductive insulating layer is disposed between the at least one heat conducting portion and the contact region. 如申請專利範圍第4項所述之發光裝置,其中上述多個貫穿式導熱結構設置於該接觸區與上述至少一底端導熱層之間,或上述多個貫穿式導熱結構同時設置於該接觸區與上述至少一底端導熱層之間、及設置於每一個延伸區與上述至少一底端導熱層之間。 The illuminating device of claim 4, wherein the plurality of through heat conducting structures are disposed between the contact region and the at least one bottom heat conducting layer, or the plurality of through heat conducting structures are simultaneously disposed at the contact The region is disposed between the at least one bottom thermally conductive layer and between each of the extension regions and the at least one bottom thermally conductive layer. 如申請專利範圍第2項所述之發光裝置,其中上述至少一底端導熱層的面積大於上述至少一頂端導熱層的面積。 The illuminating device of claim 2, wherein the at least one bottom heat conducting layer has an area larger than an area of the at least one top heat conducting layer. 如申請專利範圍第2項所述之發光裝置,其中每一個貫穿式導熱結構具有一貫穿該基板本體的貫穿孔及一用於完全填滿該貫穿孔的導熱體,且該導熱體連接於上述至少一頂端導熱層與上述至少一底端導熱層之間。 The light-emitting device of claim 2, wherein each of the through-type heat-conducting structures has a through hole penetrating the substrate body and a heat conductor for completely filling the through hole, and the heat conductor is connected to the above Between at least one top thermally conductive layer and the at least one bottom thermally conductive layer. 如申請專利範圍第2項所述之發光裝置,其中每一個貫穿式導熱結構具有一貫穿該基板本體的貫穿孔及一用於部分填滿該貫穿孔的導熱體,且該導熱體連接於上述至少一頂端導熱層與上述至少一底端導熱層之間。 The light-emitting device of claim 2, wherein each of the through-type heat-conducting structures has a through hole penetrating the substrate body and a heat conductor for partially filling the through hole, and the heat conductor is connected to the above Between at least one top thermally conductive layer and the at least one bottom thermally conductive layer. 如申請專利範圍第2項所述之發光裝置,其中,上述至少一發光元件電性連接於上述至少一第一導電支架與上述至少一第二導電支架,上述至少一第一導電部對應於上述至少一第一電極層且電性連接於上述至少一第一電極層,上述至少一第二導電部對應於上述至少一第二電極層且電性連接於上述至少一第二電極層,上述至少一第一電極層與上述至少一第二電極層位於該基板本體的頂端上的同一側邊,且上述至少一頂端導熱層位於該基板本體的頂端的另一側邊。 The illuminating device of claim 2, wherein the at least one illuminating element is electrically connected to the at least one first conductive bracket and the at least one second conductive bracket, and the at least one first conductive portion corresponds to the above At least one first electrode layer electrically connected to the at least one first electrode layer, the at least one second conductive portion corresponding to the at least one second electrode layer and electrically connected to the at least one second electrode layer, the at least A first electrode layer and the at least one second electrode layer are located on the same side of the top end of the substrate body, and the at least one top heat conducting layer is located on the other side of the top end of the substrate body. 如申請專利範圍第2項所述之發光裝置,其中該發光單元包括至少一鄰近上述至少一第一導電支架的第三導電支架,該殼體介於上述至少一第一導電支架、上述至少一第二導電支架與上述至少一第三導電支架之間,上述至少一發光元件電性連接於上述至少一第一導電支架與上述至少一第三導電支架,且上述至少一第三導電支架具有至少一從該殼體裸露的第三導電部。 The illuminating device of claim 2, wherein the illuminating unit comprises at least one third conductive bracket adjacent to the at least one first conductive bracket, the housing being interposed between the at least one first conductive bracket and the at least one Between the second conductive support and the at least one third conductive support, the at least one light-emitting component is electrically connected to the at least one first conductive support and the at least one third conductive support, and the at least one third conductive support has at least a third conductive portion exposed from the housing. 如申請專利範圍第10項所述之發光裝置,其中上述至少一第一導電部對應於上述至少一第一電極層且電性連接於上述至少一第一電極層,上述至少一第三導電部對應於上述至少一第二電極層且電性連接於上述至少一第二電極層,上述至少一第一電極層與上述至少一第二電極層分別位於該基板本體的頂端上的兩相對側邊,且上述 至少一頂端導熱層大致上位於上述至少一第一電極層與上述至少一第二電極層之間。 The illuminating device of claim 10, wherein the at least one first conductive portion corresponds to the at least one first electrode layer and is electrically connected to the at least one first electrode layer, the at least one third conductive portion Corresponding to the at least one second electrode layer and electrically connected to the at least one second electrode layer, the at least one first electrode layer and the at least one second electrode layer are respectively located on opposite sides of the top end of the substrate body And above The at least one top thermally conductive layer is substantially between the at least one first electrode layer and the at least one second electrode layer. 如申請專利範圍第1項所述之發光裝置,其中上述至少一導熱絕緣層的導熱係數實質上介於120至500W/mK之間。 The illuminating device of claim 1, wherein the at least one thermally conductive insulating layer has a thermal conductivity substantially between 120 and 500 W/mK.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814368A (en) * 2006-09-15 2008-03-16 Everlight Electronics Co Ltd High thermal dissipation LED package structure
TW201103172A (en) * 2008-12-31 2011-01-16 Intematix Corp Light emitting device with phosphor wavelength conversion
TWM401200U (en) * 2010-09-13 2011-04-01 Ho Cheng Industrial Co Ltd Heat conduction and heat sink structure for LED

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814368A (en) * 2006-09-15 2008-03-16 Everlight Electronics Co Ltd High thermal dissipation LED package structure
TW201103172A (en) * 2008-12-31 2011-01-16 Intematix Corp Light emitting device with phosphor wavelength conversion
TWM401200U (en) * 2010-09-13 2011-04-01 Ho Cheng Industrial Co Ltd Heat conduction and heat sink structure for LED

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