TW200814368A - High thermal dissipation LED package structure - Google Patents

High thermal dissipation LED package structure Download PDF

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Publication number
TW200814368A
TW200814368A TW95134344A TW95134344A TW200814368A TW 200814368 A TW200814368 A TW 200814368A TW 95134344 A TW95134344 A TW 95134344A TW 95134344 A TW95134344 A TW 95134344A TW 200814368 A TW200814368 A TW 200814368A
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Taiwan
Prior art keywords
metal block
package structure
metal
emitting diode
high thermal
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TW95134344A
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Chinese (zh)
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TWI379435B (en
Inventor
Yi-Tsuo Wu
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Everlight Electronics Co Ltd
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Publication of TW200814368A publication Critical patent/TW200814368A/en
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Publication of TWI379435B publication Critical patent/TWI379435B/en

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Abstract

A good heat dissipation LED package structure has a metal slug. An electrical-isolated layer is coated between the metal slug and a heat sink. An LED has two or more than two electrodes, one of which is electrically connected with the metal slug by the gold wire. Two metal terminals are disposed around the metal bulk and one of them is electrically connected with the metal bulk by the gold wire. A resin material is applied to secure and pack all above elements to the metal slug.

Description

200814368 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種封裝結構, m 且%別疋有關於一種 發光二極體的封裝結構。 【先前技術】 隨著發光二極體元件操作功率的增加,發光二極體封 裝結構的散熱設計也越來越重要。為使發光二極體發光時 所產生之熱可以順利自發光晶片排出,通常在晶片下方會 安裝一個金屬塊以吸附晶片發光所產生之熱。為了使散熱 效率可以提升,通常會安裝較大之金屬塊,因而造成封裝 體的體積增加,同時也使得發光晶片與外部電能連結的金 線也相對需要加長。上述封裝結構在激烈的溫度變化下, 往往會因過大的封裝材質間的熱膨脹係數差異,使金線容 易拉斷而導致信賴性的問題。 請參照第1圖,其繪示習知的一種高導熱發光二極體 封裝結構100的剖面圖。高功率發光二極體1 〇2固定於一 大金屬塊104上(提升散熱效率),並藉由兩金線1〇6與兩邊 的引腳114連接。發光二極體1〇2接著以透明樹脂108封 裝,並加上光學透鏡110,最後再以樹脂112包裝固定光學 透鏡110、金屬塊104及引腳114。就如同上一段文字所述, 當金屬塊104體積過大時,樹脂112與金屬塊1〇4或引腳 114之間的熱膨脹係數的差異,可能會使過長金線106容易 拉斷而導致信賴性的問題。 5 200814368 【發明内容】 口此本發明的目的就是在提供一種發光二極體的封裝 結構,用以用以改善封裝結構的信賴性。 根據本發明之上述目的,提出一種高導熱發光二極體 封裝…構此一極體封裝結構具有一金屬塊。一高導熱絕 緣,層,其位置介於該金屬塊與其基板之間。一發光二極 體曰曰片固疋於金屬塊上。發光二極體晶片具有兩個或兩個 以上的電極,此兩電極與金屬塊彼此分離,其中一電極與 ’ 、屬4 乂金線連接。兩個或兩個以上的引腳,位於該金屬 塊周圍,此引腳與金屬塊彼此分離,其中一個或一個以上 、、/腳/、該至屬塊以金線連接。一樹脂材料封裝及固定上 述凡件於金屬塊上。上述高導熱絕緣鑛層材質可以是鑽石 鍍膜、類鑽碳鑛膜 '氮化銘、氧化紹、氧化鉻、氧化石夕或 氮化矽的等絕緣材料。 士由上述可知,應用本發明之高導熱發光二極體封裝結 的改良、、Ό構’將發光二極體的其巾—電極以金線連接至 • 纟載的金屬塊,能同時減少連接兩電極的金線的拉斷機會 而增加其信賴性。 【實施方式】 如上所述,本發明提供一自箆 ^ 44 ^ ^ ^ 目弟1圖之鬲導熱發光二極 綠、击枝 將^先一極體的其中一電極以金 綠連接至承載的金屬塊以減 鼓巧絡“ 金線長度,而且增加一高導 於金屬塊與成承載的基板之間。以下將配合較 “把例來詳細說明此高導熱發光:極體封裝結構。 200814368 请參照苐2圖’其繪示依照本發明一較佳實施例的一 種高導熱發光二極體封裝結構的剖面圖。高功率發光二極 體202固定於一大金屬塊204上,藉由金屬的高導熱的特 性將發光二極體202所產生的熱量經金屬塊2〇4傳導至一 連接之基板216。金屬塊204的材質可以是金、銀、銀合金、 銅、銅合金、鉑、鋁、鋁合金、鎳、錫或鎂。本較佳實施 例與第1圖之實施例不同的是其中一電極202b以金線206b 連接至金屬塊204,再連接至引腳214b。因此,兩段金線 206b都相對於弟1圖之實施例縮短了。雖然,金線2〇6a 的長度並未較第1圖之實施例縮短,但只縮短一邊的金線 206b部能同時帶來兩邊的金線206a及金線206b信賴性的 增加(較不易拉斷)。因為樹脂Π2與金屬塊104或引腳U4 之間的熱膨服係數的差異,在熱)張冷縮時對本較佳實施例 的金線206a及金線206b產生應力較小(相較於第1圖之實 施例),因此金線較不容易因疲勞破壞而拉斷。 雖然’上述貫施例疋以兩個電極的發光二極體說明, 此封裝結構當然也適用於三個電極以上的發光二極體。將 發光二極體複數個電極的其中之一(或以上)以金線連接至 金屬塊,再連接至引腳。當然,引腳的數量也可以三根以 打(金)線完成的發光二極體202加上光學透鏡21〇,接 著以透明樹脂材料208封裝。發光二極體202的位置能對 準光學透鏡210的光學軸心為較佳。上述光學透鏡21〇的 材質可以是PS(聚苯乙烯)、ABS(苯乙烯-丁二烯-丙烯酯)、 PMMA(聚曱基丙烯甲酯)、PC(聚碳酸酯)、環氧樹脂或玻 7 200814368 璃。樹脂材料212之功能為固定光學透鏡21〇、金屬塊2〇4 及引腳214a及214b。 為了使金屬塊204與基板216絕緣,一高導熱絕緣鍍 層205形成於金屬塊204與基板2丨6的接觸面上(形成於金 屬塊204與基板216兩者之間)。此高導熱絕緣鐘層除 - 了要具有電絕、緣的特性外,還必、需具冑冑導熱的特性。因 ‘ 此,高導熱絕緣鍍層205適當的材料可以是例如鑽石鍍膜、 類鑽碳(Diamond like carbon)鍍膜、氮化鋁(A1N)、氧化 • 崔呂(A12〇3)、氧化路(Cr203)、氧化石夕(Si02)或氮化石夕(SiN4) 等材料。 由上述本發明較佳實施例可知,應用本發明之高導熱 發光二極體封裝結構的改良結構,將發光二極體的其中一 電極以金線連接至承載的金屬塊,能同時減少連接:電極 的金線的拉斷機會而增加其信賴性。 雖然本發明已以一較佳實施例揭露如上,然其並非用 以限定本發明,任何熟習此技藝者,在不脫離本發明之精 •=範圍内’當可作各種之更動與潤飾,因此本發明之^ 護範圍當視後附之申請專利範圍所界定者為準。 ^ 【圖式簡單說明】 為讓本發明之上述和其他目的 能更明顯易懂,所附圖式之詳細說明如下: 、_ 的剖:圖:,知的-種高導熱發光二極體嶋 第2圖係繪示依照本發明一較佳實施例的-種高導熱 200814368 發光二極體封裝結構的剖面圖。 【主要元件符號說明】 100 :發光二極體封裝結構 Ϊ02 :發光二極體 104 :金屬塊 106 :金線 1觀:貴脂材料 110 :光學透鏡 112 :檄脂材料 114 :引腳 200 :發光二極體封裝結構 202 :發光二極體 202a/202b :電極 204 :金屬塊 205 :高導熱絕緣鍍層 206a/206b :金線 208 :透明材料 210 :光學透鏡 212 ·樹脂材料 214a/214b :引腳 216 :基板200814368 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a package structure, m and % related to a package structure of a light-emitting diode. [Prior Art] As the operating power of the light-emitting diode element increases, the heat dissipation design of the light-emitting diode package structure becomes more and more important. In order to allow the heat generated by the light-emitting diode to be smoothly discharged from the light-emitting chip, a metal block is usually mounted under the wafer to adsorb the heat generated by the light emitted from the wafer. In order to improve the heat dissipation efficiency, a large metal block is usually installed, which causes an increase in the volume of the package, and also requires a relatively long length of gold wire connecting the light-emitting chip to the external power. Under the severe temperature change, the above-mentioned package structure tends to cause the reliability of the gold wire due to the difference in thermal expansion coefficient between the oversized package materials. Referring to FIG. 1, a cross-sectional view of a conventional high thermal conductivity LED package structure 100 is shown. The high power light-emitting diodes 1 〇 2 are fixed on a large metal block 104 (to improve heat dissipation efficiency), and are connected to the leads 114 on both sides by two gold wires 1〇6. The light-emitting diode 1 2 is then packaged with a transparent resin 108, an optical lens 110 is applied, and finally, the optical lens 110, the metal block 104, and the leads 114 are packaged by the resin 112. As described in the previous paragraph, when the volume of the metal block 104 is too large, the difference in thermal expansion coefficient between the resin 112 and the metal block 1〇4 or the lead 114 may cause the excessively long gold wire 106 to be easily broken and lead to reliability. Sexual problem. 5 200814368 SUMMARY OF THE INVENTION The object of the present invention is to provide a package structure for a light emitting diode for improving the reliability of the package structure. In accordance with the above objects of the present invention, a highly thermally conductive light-emitting diode package is proposed. The one-pole package structure has a metal block. A high thermal insulation insulation, the layer, located between the metal block and its substrate. A light-emitting diode is fixed to the metal block. The light-emitting diode wafer has two or more electrodes which are separated from each other by a metal block, and one of the electrodes is connected to a gold wire of '. Two or more pins are located around the metal block, and the pins are separated from the metal blocks, and one or more of them, //foot/, and the sub-blocks are connected by a gold wire. A resin material is packaged and fixed to the metal block. The material of the high thermal conductive insulating ore layer may be a diamond coating, a diamond-like carbon mineral film, such as nitriding, oxidizing, chromic oxide, oxidized cerium or tantalum nitride. From the above, it can be seen that the improved high-thermal-conducting light-emitting diode package of the present invention is improved, and the structure of the light-emitting diode is connected to the metal block of the light-emitting diode by the gold wire, thereby reducing the connection at the same time. The gold wire of the two electrodes has a chance to break and increase its reliability. [Embodiment] As described above, the present invention provides a heat conduction light-emitting diode green, which is connected to the carrier by a gold-green one. The metal block is used to reduce the length of the gold wire and increase the height between the metal block and the substrate to be carried. The following will be described in detail with respect to this high thermal conductivity: the polar package structure. 200814368 Please refer to FIG. 2 for a cross-sectional view of a high thermal conductivity LED package structure in accordance with a preferred embodiment of the present invention. The high-power light-emitting diode 202 is fixed on a large metal block 204, and the heat generated by the light-emitting diode 202 is conducted to the connected substrate 216 via the metal block 2〇4 by the high thermal conductivity of the metal. The material of the metal block 204 may be gold, silver, silver alloy, copper, copper alloy, platinum, aluminum, aluminum alloy, nickel, tin or magnesium. The preferred embodiment differs from the embodiment of Figure 1 in that one of the electrodes 202b is connected to the metal block 204 by a gold wire 206b and then to the pin 214b. Therefore, both gold wires 206b are shortened relative to the embodiment of Figure 1. Although the length of the gold wire 2〇6a is not shortened compared to the embodiment of Fig. 1, only the one side of the gold wire 206b can simultaneously increase the reliability of the gold wire 206a and the gold wire 206b on both sides (not easy to pull) Broken). Because of the difference in thermal expansion coefficient between the resin crucible 2 and the metal block 104 or the lead U4, the stress on the gold wire 206a and the gold wire 206b of the preferred embodiment is less when the heat is contracted (compared to the first In the embodiment of Fig. 1, the gold wire is less likely to be broken due to fatigue damage. Although the above embodiment has been described with two electrodes of light-emitting diodes, the package structure is of course applicable to light-emitting diodes of three or more electrodes. One (or more) of the plurality of electrodes of the light-emitting diode is connected to the metal block by a gold wire and then to the pin. Of course, the number of pins may be three LEDs 202 in a gold (gold) line plus an optical lens 21, and then encapsulated in a transparent resin material 208. The position of the light-emitting diode 202 can be preferably aligned with the optical axis of the optical lens 210. The material of the optical lens 21A may be PS (polystyrene), ABS (styrene-butadiene-propylene ester), PMMA (polyacrylonitrile), PC (polycarbonate), epoxy resin or Glass 7 200814368 Glass. The function of the resin material 212 is to fix the optical lens 21A, the metal block 2〇4, and the leads 214a and 214b. In order to insulate the metal block 204 from the substrate 216, a highly thermally conductive insulating coating 205 is formed on the contact surface of the metal block 204 and the substrate 2?6 (formed between the metal block 204 and the substrate 216). In addition to the characteristics of electrical insulation and edge, this high thermal conductivity insulating clock layer must also have the characteristics of heat conduction. Therefore, suitable materials for the high thermal conductive insulating coating 205 may be, for example, diamond coating, diamond like carbon coating, aluminum nitride (A1N), oxidation, Cui Lu (A12〇3), oxidation path (Cr203). , such as oxidized stone (Si02) or nitrided silicon (SiN4). According to the preferred embodiment of the present invention, the improved structure of the high thermal conductivity LED package structure of the present invention is used to connect one of the electrodes of the LED to the metal block supported by the gold wire, thereby reducing the connection at the same time: The gold wire of the electrode has a chance to break and increase its reliability. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and any person skilled in the art can make various changes and refinements without departing from the scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above and other objects of the present invention more comprehensible, the detailed description of the drawings is as follows: _ Section: Figure: Known-type high thermal conductivity LED 嶋2 is a cross-sectional view showing a high thermal conductivity 200814368 light emitting diode package structure in accordance with a preferred embodiment of the present invention. [Main component symbol description] 100: Light-emitting diode package structure Ϊ02: Light-emitting diode 104: Metal block 106: Gold wire 1 view: Grease material 110: Optical lens 112: Grease material 114: Pin 200: Light-emitting Diode package structure 202: light-emitting diode 202a/202b: electrode 204: metal block 205: high thermal conductive insulating coating 206a/206b: gold wire 208: transparent material 210: optical lens 212 · resin material 214a/214b: pin 216: substrate

Claims (1)

200814368 十、申清專利範圍: 1.一種高導熱發光二極體封裝結構,至少包含: 一金屬塊; 一發光二極體晶片,固定於該金屬塊上,該發光二極 體晶片具有兩個或兩個以上的電極’該電極與該金屬塊彼 此分離’其中一個或一個以上的電極與該金屬塊以金線連 接,200814368 X. Shenqing Patent Range: 1. A high thermal conductivity LED package structure comprising at least: a metal block; a light emitting diode chip fixed on the metal block, the light emitting diode chip having two Or two or more electrodes 'the electrode and the metal block are separated from each other', wherein one or more of the electrodes are connected to the metal block by a gold wire, 兩個或兩個以上的引腳,位於該金屬塊周圍,該引腳 與金屬塊彼此分離,复Φ 一 /、中個或一個以上的引腳與該金屬 塊以金線連接;以及 一樹脂材料’封裝及固定上述元件於該金屬塊上。 屬二專利軸1項所述之封裝結構,其中該金 屬=材貝包含金、銀、銀合金、銅、銅合金、翻、銘、 鋁合金、鎳、錫或鎂。Two or more pins located around the metal block, the pins and the metal blocks are separated from each other, and a plurality of Φ, /, or more than one of the leads are connected to the metal block by a gold wire; and a resin The material 'packages and secures the above components to the metal block. The package structure of claim 2, wherein the metal material comprises gold, silver, silver alloy, copper, copper alloy, turn, inscription, aluminum alloy, nickel, tin or magnesium. 3 ·如申請專利範圍第1 光學透鏡罩住該樹脂材料。 項所述之封裝結構 更包括一 學透鏡的材質包含;笨:項::之封㈣^ 。鄉本乙烯·丁二嫌_禺哈 基丙稀甲酷、聚碳酸®旨或環氧樹脂或玻璃。日承 200814368 5·一種高導熱發光二極體封裝結構,至少包含: 一金屬塊; 上; -高導熱絕緣鍍層,位於該金屬塊與其基板的接觸面 一發光二極體晶片,固定於該金屬塊上,該發光二極 體晶片具有兩個或兩個以上的電極’該電極與該金屬塊彼 此分離,其中一個或-個以上的電極與該金屬塊以金線連 接; 、 兩個或兩個以上的引腳,位於該金屬塊周s,該引腳 與金屬塊彼此分離,其中一個或一個以上的引腳與該金 塊以金線連接;以及 -樹脂材料,封裝及固定上述元件於該金屬塊上。 6. 如申請專利範圍第5項所述之封裝結構,其中該金 屬塊的材質金、銀、銀合金、銅、銅合金、銘、鋁、鋁合 金、錄、錫或鎮。 7. 如申請專利刪5項所述之封裝結構,更包括一 光學透鏡罩住該樹脂材料。 8·如申請專利範㈣7項所述之㈣結構,立中該光 :透鏡的材質包含聚苯乙烯、苯乙稀_丁二烯_丙晞醋、聚甲 土丙烯甲酯、聚碳酸酯或環氧樹脂或玻璃。 9·如申請專利範圍第5項所述之封裝結構,其中該高 11 200814368 導熱絕緣鍍層包含鑽石鏡膜、類鑽碳(Diamond like carbon ) 鍍膜、氮化鋁(AIN)、氧化鋁(A1203)、氧化鉻(Cr203)、氧 化矽(Si02)或氮化矽(SiN4)。3 · The patented scope 1st optical lens covers the resin material. The package structure described in the item further includes the material of a lens; stupid: item:: the seal (four) ^.乡本乙乙丁二嫌_禺哈 基丙甲甲, polycarbonate® or epoxy or glass.日承200814368 5· A high thermal conductivity LED package structure comprising at least: a metal block; an upper; a high thermal conductive insulating coating on the contact surface of the metal block and its substrate, a light emitting diode wafer fixed to the metal Block, the light emitting diode wafer has two or more electrodes 'the electrode and the metal block are separated from each other, wherein one or more electrodes are connected with the metal block by a gold wire; two or two More than one pin, located in the circumference s of the metal block, the pin and the metal block are separated from each other, wherein one or more pins are connected with the gold block by a gold wire; and - a resin material, encapsulating and fixing the above component On the metal block. 6. The package structure of claim 5, wherein the metal block is made of gold, silver, silver alloy, copper, copper alloy, Ming, aluminum, aluminum alloy, recorded, tin or town. 7. The package structure of claim 5, further comprising an optical lens covering the resin material. 8. If the structure of (4) mentioned in the 7th paragraph of the patent application (4) is applied, the light of the lens shall be: the material of the lens comprises polystyrene, styrene-butadiene-propylene vinegar, polymethyl propylene methyl ester, polycarbonate or Epoxy or glass. 9. The package structure of claim 5, wherein the high thermal insulation coating comprises a diamond mirror film, a diamond like carbon coating, an aluminum nitride (AIN), an aluminum oxide (A1203). , chromium oxide (Cr203), yttrium oxide (SiO 2 ) or tantalum nitride (SiN4). 1212
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050602A (en) * 2011-10-11 2013-04-17 旭丽电子(广州)有限公司 Light-emitting device
TWI476968B (en) * 2011-10-11 2015-03-11 Lite On Electronics Guangzhou Light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050602A (en) * 2011-10-11 2013-04-17 旭丽电子(广州)有限公司 Light-emitting device
TWI476968B (en) * 2011-10-11 2015-03-11 Lite On Electronics Guangzhou Light-emitting device
CN103050602B (en) * 2011-10-11 2016-04-06 光宝电子(广州)有限公司 Light-emitting device

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