TWI473198B - Apparatus for holding a wafer - Google Patents
Apparatus for holding a wafer Download PDFInfo
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- TWI473198B TWI473198B TW98116143A TW98116143A TWI473198B TW I473198 B TWI473198 B TW I473198B TW 98116143 A TW98116143 A TW 98116143A TW 98116143 A TW98116143 A TW 98116143A TW I473198 B TWI473198 B TW I473198B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本發明的實施例係關於一種晶圓固持裝置，本發明的實施例特別是有關於一種晶圓固持裝置，可固持一晶圓以對該晶圓進行電子檢測。Embodiments of the present invention relate to a wafer holding device. Embodiments of the present invention are particularly directed to a wafer holding device that holds a wafer for electronic detection of the wafer.
半導體裝置通常可由以下製程製造，一製程用以在一半導體晶圓(例如一矽晶圓)上形成電路圖樣、一電子晶粒分析(EDS)製程用以檢測具有電路圖樣之晶圓之電性特性、以及一封裝製程用以將形成於晶圓上之半導體晶片分開並將半導體晶片利用環氧樹脂封裝。A semiconductor device can be generally fabricated by a process for forming a circuit pattern on a semiconductor wafer (eg, a germanium wafer) and an electronic grain analysis (EDS) process for detecting the electrical properties of the wafer having the circuit pattern. The features, and a packaging process are used to separate the semiconductor wafers formed on the wafer and encapsulate the semiconductor wafers with epoxy.
在EDS製程中，對晶圓上的半導體晶片施加電信號，可藉由半導體晶片所輸出的電信號而區別出損壞的晶片。晶圓可由一晶圓固持裝置所固持，並且一檢測裝置之探針可與半導體晶片的焊墊直接接觸以施加電信號。In the EDS process, an electrical signal is applied to a semiconductor wafer on a wafer, and the damaged wafer can be distinguished by an electrical signal output from the semiconductor wafer. The wafer can be held by a wafer holding device, and the probe of a detecting device can be in direct contact with the pad of the semiconductor wafer to apply an electrical signal.
晶圓固持裝置包括一主體具有一碟形。連接於一真空泵之一真空線路可形成於主體中，以及與真空線路連接的複數個真空管道可形成於主體表面部份。晶圓固持裝置可利用由真空管道中產生的一真空力來固持晶圓。於此，產生真空力所需的時間係根據本體各部份而有所不同。也就是說，所產生的真空力所需的時間在靠近真空泵之本體的一部份比遠離真空泵之本體的一部份相對要短。據此，當真空力產生以固持晶圓時，晶圓會在主體上滑動。因此，晶圓在被固持時，會脫離一預定的位置，並且需要更多時間來調整晶圓的位置以使晶圓位於標準的檢測位置。The wafer holding device includes a body having a dish shape. A vacuum line connected to a vacuum pump may be formed in the body, and a plurality of vacuum tubes connected to the vacuum line may be formed on a surface portion of the body. The wafer holding device can hold the wafer by a vacuum force generated in the vacuum tube. Here, the time required to generate the vacuum force varies depending on the parts of the body. That is, the time required for the generated vacuum force is relatively short near a portion of the body of the vacuum pump than a portion remote from the body of the vacuum pump. Accordingly, when a vacuum force is generated to hold the wafer, the wafer slides on the body. Therefore, when the wafer is held, it will be separated from a predetermined position, and more time is needed to adjust the position of the wafer to place the wafer at the standard detection position.
本發明實施例提供一晶圓固持裝置，可有效防止晶圓的滑動，可使晶圓固持在一預定位置。Embodiments of the present invention provide a wafer holding device that can effectively prevent wafer sliding and hold the wafer at a predetermined position.
根據本發明一實施例，一晶圓固持裝置包括一主體支撐晶圓並具有一碟形，一第一真空管道形成於主體的一中央部的一上表面，以及一第二真空管道形成於主體的一邊緣部的一上表面；一第一真空源與第一真空管道連接以在第一真空管道中產生一第一真空力，以固持晶圓的一中央部；一第二真空源與第二真空管道連接以在第二真空管道中產生一第二真空力，以固持晶圓的其他部份；以及一控制件與第一以及第二真空源連接以控制第一以及第二真空源的運作，使第一真空力的產生早於第二真空力。According to an embodiment of the invention, a wafer holding device includes a body supporting wafer and has a dish shape, a first vacuum tube is formed on an upper surface of a central portion of the main body, and a second vacuum tube is formed on the main body. An upper surface of an edge portion; a first vacuum source coupled to the first vacuum tube to generate a first vacuum force in the first vacuum tube to hold a central portion of the wafer; a second vacuum source and a second The vacuum conduit is connected to generate a second vacuum force in the second vacuum conduit to hold the other portion of the wafer; and a control member is coupled to the first and second vacuum sources to control operation of the first and second vacuum sources, The first vacuum force is generated earlier than the second vacuum force.
在本發明之一些實施例中，每一第一以及第二真空源包括一真空泵以及一閥件。In some embodiments of the invention, each of the first and second vacuum sources includes a vacuum pump and a valve member.
在本發明之一些實施例中，晶圓固持裝置更包括一第一真空線路包括複數個第一垂直部，由第一真空管道向下延伸，以及一第一水平部，在主體中水平的延伸，以將第一垂直部連接至第一真空源；以及一第二真空線路包括複數個第二垂直部，由第二真空管道向下延伸，以及一第二水平部，在主體中水平的延伸，以將第二垂直部連接至第二真空源。In some embodiments of the present invention, the wafer holding device further includes a first vacuum line including a plurality of first vertical portions extending downward from the first vacuum tube and a first horizontal portion extending horizontally in the body And connecting the first vertical portion to the first vacuum source; and the second vacuum line includes a plurality of second vertical portions extending downward from the second vacuum conduit and a second horizontal portion extending horizontally in the body To connect the second vertical portion to the second vacuum source.
在本發明之一些實施例中，第一真空管道具有一環形。第二真空管道包括同心排列的複數個環形管道，以及將環形管道彼此連接的複數個徑向管道。In some embodiments of the invention, the first vacuum conduit has a ring shape. The second vacuum conduit includes a plurality of annular conduits that are concentrically arranged, and a plurality of radial conduits that connect the annular conduits to one another.
在本發明之一些實施例中，一第三真空管道形成於一中間部的上表面，而中間部位於主體的中央部以及邊緣部之間。在此例中，晶圓固持裝置更包括一第三真空源，與第三真空管道連接，並由控制件控制，藉此在第一真空力產生之後而在第三真空管道中產生一第三真空力；以及一第三真空線路包括複數個第三垂直部，由第三真空管道向下延伸，以及一第三水平部，在主體中水平的延伸，以將第三垂直部連接至第三真空源。In some embodiments of the invention, a third vacuum conduit is formed on the upper surface of an intermediate portion, and the intermediate portion is located between the central portion and the edge portion of the body. In this example, the wafer holding device further includes a third vacuum source connected to the third vacuum tube and controlled by the control member, thereby generating a third vacuum in the third vacuum tube after the first vacuum force is generated. And a third vacuum line comprising a plurality of third vertical portions extending downwardly from the third vacuum conduit and a third horizontal portion extending horizontally in the body to connect the third vertical portion to the third vacuum source.
根據本發明上述之實施力，晶圓固持裝置可利用形成於主體之一中央部之上表面之一第一真空管道固持一晶圓之一中央部，並利用第二以及第三真空管道固持晶圓的其他部份。據此，當主體固持晶圓時可防止晶圓的滑動。According to the above implementation of the present invention, the wafer holding device can hold a central portion of a wafer by using a first vacuum tube formed on one of the upper surfaces of the central portion of the main body, and hold the crystal by the second and third vacuum tubes. The rest of the circle. Accordingly, the sliding of the wafer can be prevented when the body holds the wafer.
本發明茲配合以下圖示以及標號詳細說明，其中顯示本發明之實施例。本發明可以不同樣式具體實現，且其構造不限制於在此所述之實施例。此外，本發明實施例係用來徹底並完整的揭露本發明技術，並提供完整技術範圍予熟知此技術領域者。在圖式中，不同層級以及區域的尺寸以及相對尺寸可跨張顯示以求明確。The present invention has been described in detail with reference to the accompanying drawings The invention may be embodied in different specific forms and its construction is not limited to the embodiments described herein. In addition, the embodiments of the present invention are intended to completely and completely disclose the present technology and provide a complete technical scope to those skilled in the art. In the drawings, the dimensions and relative sizes of different levels and regions can be displayed across the sheets for clarity.
值得注意的是，當一元件或一層在另一元件或另一層之上，或與另一元件或另一層連接，其可視為直接在另一元件/另一層之上或是與另一元件/另一層連接，或當中具有其他元件或層存在。反之，當一元件直接在另一元件/一層之上或是直接與另一元件/層連接，該元件與另一元件之不具有其他元件/層存在。在全文中相同的標號意指相同的元件。於此使用之名詞”以及(或)”包含任一種及所有相關物件之組合。It is noted that when an element or layer is on the other or another layer, or is connected to another element or another layer, it can be Another layer is connected, or there are other elements or layers present therein. On the other hand, when an element is directly connected to another element/layer or directly to another element/layer, the element does not have other elements/layers. The same reference numerals are used throughout the drawings to refer to the same elements. The terms "and" or "an"
值得注意的是，在此使用之名詞”第一、第二、第三…”可用來描述不同元件、零件、區域、層以及(或)部份，但這些元件、零件、區域、層以及(或)部份並不因此設限。這些名詞僅用於區分不同的、零件、區域、層以及(或)部份。因此，以下所述之一第一元件、零件、區域、層以及(或)部份可為一第二元件、零件、區域、層以及(或)部份，而不違反本發明之教示。It is to be noted that the terms "first, second, third..." as used herein may be used to describe various elements, parts, regions, layers and/or parts, but such elements, parts, regions, layers, and Or) the part is not limited. These nouns are only used to distinguish between different parts, regions, layers and/or parts. Thus, one of the first elements, parts, regions, layers and/or parts may be a second element, component, region, layer and/or portion, without departing from the teachings of the invention.
關係名詞，例如”低於”、”高於”以及其他在此可用來說明圖示中之元件或特徵的相對關係。值得注意的是，關係名詞意圖包括使用中的裝置的不同方向，亦包含圖示中所描述的方向。舉例來說，假設圖示中之裝置為反置，說明書中描述元件為“低於”其他元件或”在其他元件以下”，則該元件亦可描述成“高於”其他元件。因此，此名詞“低於”可包括有“低於”及“高於”之關係的描述。此裝置亦可以其他的形式安置(旋轉90度或是其他的方向設置)並且於此使用之相對關係之描述據此說明。Relational nouns such as "below", "above" and "the" are used to describe the relative relationship of the elements or features in the drawings. It should be noted that relational nouns are intended to include different orientations of the device in use, as well as the orientations depicted in the drawings. For example, assuming that the device in the figures is reversed, the elements described in the specification are "below" other elements or "below the other elements", the element can also be described as "above" other elements. Thus, the term "lower than" can include a description of the relationship of "below" and "above". The device can also be placed in other forms (rotated 90 degrees or other orientation settings) and the description of the relative relationship used herein will be described accordingly.
在此所使用之術語僅用來說明特定實施例，並不限制發明技術。在此使用之單數名詞”一”以及“該”，除非說明內容清楚指明，其可用來包含複數的形式。此外，在說明書中之名詞”包含”以及(或)”具有”係用來說明特定特徵、整體、步驟、運作、元件，以及(或)構件，但不排除一個或多個其他相關特徵、整體、步驟、運作、元件、構件，以及(或)集合。The terminology used herein is for the purpose of illustration and description of the embodiments As used herein, the singular terms "a" In addition, the terms "comprising" and "comprising" are used in the specification, and are used to describe a particular feature, whole, step, operation, element, and/or component, but do not exclude one or more other related features, , steps, operations, components, components, and/or collections.
除非特別定義，於此之所有名詞(包括技術性以及科學性名詞)為具有通常知識者所熟知之特殊技術名詞。更值得注意的是，除非於說明書中有特別定義，通常定義於字典中之名詞應該解釋成與相關領域中所代表之意義一致，並不理想化或過度解釋定義名詞之意義。Unless otherwise defined, all terms (including technical and scientific terms) are those of ordinary skill in the art. More notably, unless specifically defined in the specification, the nouns normally defined in the dictionary should be interpreted to be consistent with the meanings represented in the relevant fields, and the meaning of defining nouns is not idealized or over-interpreted.
本發明之實施立茲配合剖面圖式以及標號做說明，其中之圖式為本發明中理想實施例(以及其中的結構)的概要示意圖。因此實施例可能會有不同形狀的結果產生，舉例來說，根據製造的技術以及(或)工差，會產生不同結果。因此，本發明實施例之結構不受此處所示之部份的特定形狀限制，其可包含製造過程中所產生之不同形狀的誤差。在圖式中所示之部份為概示，並且其形狀並非意圖顯示一裝置之一部份之實際形狀，且不限制本發明之領域。The embodiments of the present invention are described in conjunction with the cross-sectional drawings and the drawings, which are schematic diagrams of the preferred embodiments (and structures therein). Thus embodiments may have different shapes resulting in, for example, different results depending on the manufacturing technique and/or workmanship. Thus, the structure of the embodiments of the present invention is not limited by the specific shapes of the parts shown herein, and may include the errors of the different shapes produced in the manufacturing process. The portions shown in the figures are schematic and are not intended to illustrate the actual shape of a portion of a device and do not limit the scope of the invention.
第1圖為本發明實施例中一晶圓固持裝置之剖面示意圖；以及第2圖為第1圖所示之晶圓固持裝置之俯視圖。1 is a schematic cross-sectional view of a wafer holding device in accordance with an embodiment of the present invention; and FIG. 2 is a plan view of the wafer holding device shown in FIG. 1.
參見第1圖與第2圖，一晶圓固持裝置100可用以檢測晶圓上半導體晶片的電性特性。晶圓固持裝置100利用一真空力固持晶圓，包括一主體110、真空線路120、真空源130以及一控制件140。Referring to Figures 1 and 2, a wafer holding device 100 can be used to detect the electrical characteristics of a semiconductor wafer on a wafer. The wafer holding device 100 holds the wafer by a vacuum force, and includes a main body 110, a vacuum line 120, a vacuum source 130, and a control member 140.
主體110具有一碟形並可支撐晶圓。當晶圓上置於主體110上時，晶圓的一中央部係設置於主體110的一中央部上。The body 110 has a dish shape and can support the wafer. When the wafer is placed on the body 110, a central portion of the wafer is disposed on a central portion of the body 110.
真空線路120形成於主體110中。例如，一第一真空線路122、一第二真空線路124以及一第三真空線路126可形成於主體110中。放置於主體110上的晶圓可藉由真空線路120所產生的真空力來固持。A vacuum line 120 is formed in the body 110. For example, a first vacuum line 122, a second vacuum line 124, and a third vacuum line 126 may be formed in the body 110. The wafer placed on the body 110 can be held by the vacuum force generated by the vacuum line 120.
更者，真空管道形成於主體110之一上表面，並與真空線路120連接。例如，一第一真空管道112形成於主體110之一中央部之上表面，一第二真空管道114形成於主體110之一邊緣部之上表面，以及一第三真空管道116形成於主體110之一中間部之上表面，其中中間部位於中央部以及邊緣部之間。Further, a vacuum duct is formed on one of the upper surfaces of the main body 110 and connected to the vacuum line 120. For example, a first vacuum duct 112 is formed on the upper surface of one of the central portions of the main body 110, a second vacuum duct 114 is formed on the upper surface of one of the edges of the main body 110, and a third vacuum duct 116 is formed in the main body 110. An upper surface of the intermediate portion, wherein the intermediate portion is located between the central portion and the edge portion.
真空源130與真空線路120連接以在真空管道112、114和116以及真空線路120中產生真空力。例如，一第一真空源132、一第二真空源134以及一第三真空源136可分別與第一真空線路122、第二真空線路124以及第三真空線路126連接。Vacuum source 130 is coupled to vacuum line 120 to create a vacuum force in vacuum lines 112, 114, and 116 and vacuum line 120. For example, a first vacuum source 132, a second vacuum source 134, and a third vacuum source 136 can be coupled to the first vacuum line 122, the second vacuum line 124, and the third vacuum line 126, respectively.
第一真空線路122包括複數個第一垂直部，由第一真空管道112朝下延伸，以及一第一水平部，在主體110中水平延伸將第一垂直部連接至第一真空源132。The first vacuum line 122 includes a plurality of first vertical portions extending downwardly from the first vacuum conduit 112 and a first horizontal portion extending horizontally in the body 110 to connect the first vertical portion to the first vacuum source 132.
第二真空線路124包括複數個第二垂直部，由第二真空管道114朝下延伸，以及一第二水平部，在主體110中水平延伸將第二垂直部連接至第二真空源134。The second vacuum line 124 includes a plurality of second vertical portions extending downwardly from the second vacuum conduit 114, and a second horizontal portion extending horizontally in the body 110 to connect the second vertical portion to the second vacuum source 134.
第三真空線路126包括複數個第三垂直部，由第三真空管道116朝下延伸，以及一第三水平部，在主體110中水平延伸將第三垂直部連接至第三真空源136。The third vacuum line 126 includes a plurality of third vertical portions extending downwardly from the third vacuum conduit 116 and a third horizontal portion extending horizontally in the body 110 to connect the third vertical portion to the third vacuum source 136.
特別是，第一真空管道112可將第一垂直部彼此連接，第二真空管道114可將第二垂直部彼此連接，第三真空管道116可將第三垂直部彼此連接。In particular, the first vacuum duct 112 may connect the first vertical portions to each other, the second vacuum duct 114 may connect the second vertical portions to each other, and the third vacuum duct 116 may connect the third vertical portions to each other.
第一真空管道112具有一環形，並且每一第二以及第三真空管道114、116包括複數個同心排列的環形管道以及將環形管道彼此連接的複數個徑向管道。也就是說，第二真空管道114的長度大於第一真空管道112的長度，並且第三真空管道116的長度大於第二真空管道114的長度。The first vacuum conduit 112 has an annular shape, and each of the second and third vacuum conduits 114, 116 includes a plurality of concentrically arranged annular conduits and a plurality of radial conduits that connect the annular conduits to one another. That is, the length of the second vacuum conduit 114 is greater than the length of the first vacuum conduit 112, and the length of the third vacuum conduit 116 is greater than the length of the second vacuum conduit 114.
因此，第一真空管道112中第一真空力的形成比第二真空管道114中第二真空力的形成所需時間較短。更者，第二真空管道114中第二真空力的形成比第三真空管道116中第三真空力的形成所需時間較短。據此，晶圓的一中央部放置於主體110上時，可第一時間被第一真空力所固持，藉此可防止晶圓於主體110上滑動。Therefore, the formation of the first vacuum force in the first vacuum duct 112 is shorter than the formation of the second vacuum force in the second vacuum duct 114. Moreover, the formation of the second vacuum force in the second vacuum conduit 114 is shorter than the formation of the third vacuum force in the third vacuum conduit 116. Accordingly, when a central portion of the wafer is placed on the main body 110, it can be held by the first vacuum force for the first time, thereby preventing the wafer from sliding on the main body 110.
此時，第一真空管道112以及第三真空管道116可用以固持具有一第一尺寸之一晶圓，並且第一、第二以及第三真空管道112，114、116可用以固持具有一第二尺寸之一晶圓，其中第二尺寸大於第一尺寸。例如，第一真空管道112以及第三真空管道116可用以固持一8吋晶圓，並且增加第二真空管道114的使用可固持一12吋晶圓。At this time, the first vacuum conduit 112 and the third vacuum conduit 116 may be used to hold a wafer having a first size, and the first, second, and third vacuum conduits 112, 114, 116 may be used to hold a second One of the dimensions of the wafer, wherein the second size is larger than the first size. For example, the first vacuum conduit 112 and the third vacuum conduit 116 can be used to hold an 8-inch wafer, and the use of the second vacuum conduit 114 can be used to hold a 12-inch wafer.
第一真空源132包括一第一真空泵132a以及一第一閥件132b，第二真空源134包括一第二真空泵134a以及一第二閥件134b，以及第三真空源136包括一第三真空泵136a以及一第三閥件136b。The first vacuum source 132 includes a first vacuum pump 132a and a first valve member 132b, the second vacuum source 134 includes a second vacuum pump 134a and a second valve member 134b, and the third vacuum source 136 includes a third vacuum pump 136a. And a third valve member 136b.
控制件140與真空源130連接以控制真空源130的運轉。特別是，控制件140與第一、第二以及第三真空閥件132b、134b、136b連接以控制第一、第二以及第三閥件132b、134b、136b的運轉。Control member 140 is coupled to vacuum source 130 to control operation of vacuum source 130. In particular, control member 140 is coupled to first, second, and third vacuum valve members 132b, 134b, 136b to control operation of first, second, and third valve members 132b, 134b, 136b.
例如，當具有第二尺寸晶圓放置於主體110的上表面時，控制件140連續的開啟第一閥件132b、第三閥件136b以及第二閥件134b。據此，第一真空管道112中可產生第一真空力，並且晶圓的中央部可因此而由主體110的中央部所固持。之後，第三真空力以及第二真空力可相繼的在第三真空管道116以及第二真空管道114中產生，並且晶圓的其他部份可由主體110的中間部與邊緣部所固持。For example, when a wafer having a second size is placed on the upper surface of the body 110, the control member 140 continuously opens the first valve member 132b, the third valve member 136b, and the second valve member 134b. Accordingly, a first vacuum force can be generated in the first vacuum duct 112, and the central portion of the wafer can thus be held by the central portion of the body 110. Thereafter, a third vacuum force and a second vacuum force may be sequentially generated in the third vacuum conduit 116 and the second vacuum conduit 114, and other portions of the wafer may be held by the intermediate portion and the edge portion of the body 110.
或者是，當具有第二尺寸的晶圓放置於主體110的上表面時，控制件140開啟第一閥件132b，並接著約在同時間開啟閥件第二以及第三閥件134b、136b。據此，晶圓的中央部可藉由第一真空管道112中所產生第一真空力而由主體110的中央部所固持，並且晶圓的其他部份可藉由第二以及第三真空管道114、116中產生第二與第三真空力而由主體110的邊緣部與中間部所固持。Alternatively, when a wafer having a second size is placed on the upper surface of the body 110, the control member 140 opens the first valve member 132b and then simultaneously opens the valve member second and third valve members 134b, 136b. Accordingly, the central portion of the wafer can be held by the central portion of the body 110 by the first vacuum generated in the first vacuum conduit 112, and the other portions of the wafer can be passed through the second and third vacuum conduits. The second and third vacuum forces are generated in 114, 116 and are held by the edge portion and the intermediate portion of the body 110.
如上所述，由於晶圓固持裝置100可利用第一真空線路122以及第一真空管道112在第一時間固持晶圓的中央部，可防止晶圓在主體110上滑動。更者，晶圓固持裝置100可精準的將晶圓固遲在一預定位置，並且可縮短調整晶圓位置以使晶圓位於標準的檢測位置所需的時間。As described above, since the wafer holding device 100 can hold the central portion of the wafer at the first time by the first vacuum line 122 and the first vacuum line 112, the wafer can be prevented from sliding on the body 110. Moreover, the wafer holding device 100 can accurately fix the wafer at a predetermined position, and can shorten the time required to adjust the wafer position to place the wafer at the standard detection position.
或者是，控制件140可約在同時開啟第一、第二以及第三閥件132b、134b、136b。在此例中，由於第一真空管道112的長度短於第二以及第三真空管道114、116的長度，第一真空管道112中之第一真空力的產生會早於第二以及第三真空管道114、116中之第二以及第三真空力。因此，雖然第一、第二以及第三閥件132b、134b、136b係由控制件140同時間開啟，晶圓的中央部會在第一時間藉由第一真空管道112中之第一真空力而固持於主體110之中央部上。Alternatively, the control member 140 can open the first, second, and third valve members 132b, 134b, 136b at about the same time. In this example, since the length of the first vacuum conduit 112 is shorter than the lengths of the second and third vacuum conduits 114, 116, the first vacuum force in the first vacuum conduit 112 is generated earlier than the second and third vacuums. The second and third vacuum forces in the conduits 114, 116. Therefore, although the first, second, and third valve members 132b, 134b, and 136b are simultaneously opened by the control member 140, the central portion of the wafer may pass the first vacuum force in the first vacuum conduit 112 at the first time. It is held on the central portion of the main body 110.
此時，當具有第一尺寸的晶圓放置於主體110的上表面時，控制件140可不開啟第二閥件134b。At this time, when the wafer having the first size is placed on the upper surface of the body 110, the control member 140 may not open the second valve member 134b.
在晶圓的檢測步驟完成後，控制件140可關閉第一、第二以及第三閥件132b、134b、136b，藉此移除第一、第二以及第三管道112、114、116之第一、第二以及第三真空力。After the detecting step of the wafer is completed, the control member 140 may close the first, second, and third valve members 132b, 134b, 136b, thereby removing the first, second, and third conduits 112, 114, 116 First, second and third vacuum forces.
根據上述本發明之實施例，一晶圓固持裝置可利用形成於主體的一中央部之上表面之一第一真空管道來固持一晶圓的一中央部並且利用第二以及第三真空管道來固持晶圓的其他部份。據此，當晶圓被各持時，可防止晶圓於主體上滑動。According to the embodiment of the present invention described above, a wafer holding device can hold a central portion of a wafer by using a first vacuum tube formed on a surface of a central portion of the main body and utilize the second and third vacuum tubes. Hold the rest of the wafer. Accordingly, when the wafers are held individually, the wafer can be prevented from sliding on the body.
因此，晶圓可被固持在一預定的位置，並且可縮短調整晶圓位置以使晶圓位於標準的檢測位置所需的時間。Therefore, the wafer can be held at a predetermined position, and the time required to adjust the wafer position to place the wafer at the standard detection position can be shortened.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。另外本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外，摘要部分和標題僅是用來輔助專利文件搜尋之用，並非用來限制本發明之權利範圍。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent. In addition, any of the objects or advantages or features of the present invention are not required to be achieved by any embodiment or application of the invention. In addition, the abstract sections and headings are only used to assist in the search of patent documents and are not intended to limit the scope of the invention.
100．．．晶圓固持裝置100. . . Wafer holding device
110．．．主體110. . . main body
112．．．第一真空管道112. . . First vacuum pipe
114．．．第二真空管道114. . . Second vacuum pipe
116．．．第三真空管道116. . . Third vacuum pipe
120．．．真空線路120. . . Vacuum line
122．．．第一真空線路122. . . First vacuum line
124．．．第二真空線路124. . . Second vacuum line
126．．．第三真空線路126. . . Third vacuum line
130．．．真空源130. . . Vacuum source
132．．．第一真空源132. . . First vacuum source
132a．．．第一真空泵132a. . . First vacuum pump
132b．．．第一閥件132b. . . First valve
134．．．第二真空源134. . . Second vacuum source
134a．．．第二真空泵134a. . . Second vacuum pump
134b．．．第二閥件134b. . . Second valve
136．．．第三真空源136. . . Third vacuum source
136a．．．第三真空泵136a. . . Third vacuum pump
136b．．．第三閥件136b. . . Third valve
140．．．控制件140. . . Control
第1圖為本發明實施例中一晶圓固持裝置之剖面示意圖；以及1 is a schematic cross-sectional view showing a wafer holding device in an embodiment of the present invention;
第2圖為第1圖所示之晶圓固持裝置之俯視圖。Fig. 2 is a plan view of the wafer holding device shown in Fig. 1.
100．．．晶圓固持裝置100. . . Wafer holding device
110．．．主體110. . . main body
112．．．第一真空管道112. . . First vacuum pipe
114．．．第二真空管道114. . . Second vacuum pipe
116．．．第三真空管道116. . . Third vacuum pipe
120．．．真空線路120. . . Vacuum line
122．．．第一真空線路122. . . First vacuum line
124．．．第二真空線路124. . . Second vacuum line
126．．．第三真空線路126. . . Third vacuum line
130．．．真空源130. . . Vacuum source
132．．．第一真空源132. . . First vacuum source
132a．．．第一真空泵132a. . . First vacuum pump
132b．．．第一閥件132b. . . First valve
134．．．第二真空源134. . . Second vacuum source
134a．．．第二真空泵134a. . . Second vacuum pump
134b．．．第二閥件134b. . . Second valve
136．．．第三真空源136. . . Third vacuum source
136a．．．第三真空泵136a. . . Third vacuum pump
136b．．．第三閥件136b. . . Third valve
140．．．控制件140. . . Control
Claims (6)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080129874A KR20100071234A (en) | 2008-12-19 | 2008-12-19 | Apparatus for fixing a wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201025490A TW201025490A (en) | 2010-07-01 |
| TWI473198B true TWI473198B (en) | 2015-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98116143A TWI473198B (en) | 2008-12-19 | 2009-05-15 | Apparatus for holding a wafer |
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| Country | Link |
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| KR (1) | KR20100071234A (en) |
| TW (1) | TWI473198B (en) |
| WO (1) | WO2010071274A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531511B (en) * | 2012-07-04 | 2017-02-08 | 上海微电子装备有限公司 | Sucking disc, wafer bearing stage using same and wafer adsorption method |
| WO2024125891A1 (en) * | 2022-12-13 | 2024-06-20 | Asml Netherlands B.V. | Vacuum table and method for clamping warped substrates |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5564682A (en) * | 1993-08-13 | 1996-10-15 | Kabushiki Kaisha Toshiba | Wafer stage apparatus for attaching and holding semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183366A (en) * | 1993-12-22 | 1995-07-21 | Hitachi Electron Eng Co Ltd | Air suction method of large glass substrate |
| JP3469999B2 (en) * | 1996-10-30 | 2003-11-25 | 京セラ株式会社 | Adsorber manufacturing method |
| JP4457351B2 (en) * | 2005-05-10 | 2010-04-28 | 株式会社ニコン | Substrate holding device |
-
2008
- 2008-12-19 KR KR1020080129874A patent/KR20100071234A/en not_active Application Discontinuation
-
2009
- 2009-05-15 TW TW98116143A patent/TWI473198B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5564682A (en) * | 1993-08-13 | 1996-10-15 | Kabushiki Kaisha Toshiba | Wafer stage apparatus for attaching and holding semiconductor wafer |
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| Publication number | Publication date |
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| TW201025490A (en) | 2010-07-01 |
| KR20100071234A (en) | 2010-06-29 |
| WO2010071274A1 (en) | 2010-06-24 |
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