TWI473177B - Heating device - Google Patents
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- TWI473177B TWI473177B TW101102206A TW101102206A TWI473177B TW I473177 B TWI473177 B TW I473177B TW 101102206 A TW101102206 A TW 101102206A TW 101102206 A TW101102206 A TW 101102206A TW I473177 B TWI473177 B TW I473177B
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Description
本發明是有關於一種加熱裝置。The invention relates to a heating device.
在許多的電子產品中會使用半導體晶片，這些半導體晶片通常藉由焊錫或異向性導電膠膜固定在一基板上。當半導體晶片與基板的電性連接不良或是半導體晶片本身存有缺陷時，有必要移除已固定在基板上的半導體晶片。Semiconductor wafers are used in many electronic products, which are typically mounted on a substrate by solder or an anisotropic conductive film. When the electrical connection between the semiconductor wafer and the substrate is poor or the semiconductor wafer itself has defects, it is necessary to remove the semiconductor wafer that has been fixed on the substrate.
在習知技術中，並無適當的裝置或設備將固定在基板上的半導體晶片移除。通常是藉由手工的方式，利用一加熱設備來加熱半導體晶片，再以一夾具將半導體晶片拔除。在上述操作過程中，很容易造成半導體晶片破裂損毀，而無法進行後續分析或進行重工(rework)。In the prior art, there is no suitable device or device to remove a semiconductor wafer that is fixed on a substrate. The semiconductor wafer is usually heated by a heating device by hand, and the semiconductor wafer is removed by a jig. During the above operation, the semiconductor wafer is easily broken and cannot be subjected to subsequent analysis or rework.
另一方面，在許多電子產品中，半導體晶片的周圍設置有其他元件。若以手工方式移除半導體晶片，常常發生移除半導體晶片時，損壞周邊的其他元件。因此，有必要開發出一種嶄新的設備，來移除已固定在基板上的半導體晶片。On the other hand, in many electronic products, other components are disposed around the semiconductor wafer. If the semiconductor wafer is removed by hand, it is often the case that when the semiconductor wafer is removed, other components of the perimeter are damaged. Therefore, it is necessary to develop a new device to remove a semiconductor wafer that has been fixed on a substrate.
本發明之一態樣係提供一種加熱裝置，俾能移除固設於基材上之一物件，且在移除的過程中，能有效地避免物件損毀或破裂。此加熱裝置包含一加熱部以及一推抵部。加熱部具有一加熱面，用以加熱欲移除之物件。推抵部由加熱部之一端向下延伸，推抵部鄰近加熱面之一側具有一推抵面，且推抵面大致垂直加熱面。One aspect of the present invention provides a heating device that can remove an object that is fixed to a substrate and that can effectively prevent damage or breakage of the object during removal. The heating device includes a heating portion and a pushing portion. The heating portion has a heating surface for heating the object to be removed. The pushing portion extends downward from one end of the heating portion, and the pushing portion has a pushing surface adjacent to one side of the heating surface, and the pushing surface is substantially perpendicular to the heating surface.
根據本發明一實施方式，推抵面鄰接加熱面。According to an embodiment of the invention, the abutting surface abuts the heating surface.
根據本發明一實施方式，加熱面以及推抵面實質上為平面。According to an embodiment of the invention, the heating surface and the pushing surface are substantially planar.
根據本發明一實施方式，加熱部具有複數第一氣孔，且每一些第一氣孔具有一開口位於加熱面上。According to an embodiment of the invention, the heating portion has a plurality of first air holes, and each of the first air holes has an opening on the heating surface.
根據本發明一實施方式，推抵部具有複數第二氣孔，且每一些第二氣孔具有一開口位於推抵面上。According to an embodiment of the invention, the pushing portion has a plurality of second air holes, and each of the second air holes has an opening on the pushing surface.
根據本發明一實施方式，此加熱裝置更包含一連接部，連接部實體連接加熱部，並用以傳遞熱能至加熱部。According to an embodiment of the invention, the heating device further comprises a connecting portion, the connecting portion is physically connected to the heating portion and configured to transfer thermal energy to the heating portion.
根據本發明一實施方式，加熱面之一寬度為約1 mm至約5 mm，且加熱面之一長度為約0.5公分至約3公分。According to an embodiment of the invention, one of the heating faces has a width of from about 1 mm to about 5 mm, and one of the heating faces has a length of from about 0.5 cm to about 3 cm.
根據本發明一實施方式，推抵部具有一底面連接推抵面，且底面垂直推抵面。According to an embodiment of the invention, the pushing portion has a bottom surface connecting the pushing surface, and the bottom surface is vertically pushed against the surface.
根據本發明一實施方式，推抵部遠離加熱面之一側具有一斜面，且推抵部之一底部的厚度為約0.5 mm至約3 mm。According to an embodiment of the invention, the pushing portion has a slope away from the side of the heating surface, and the thickness of the bottom of one of the pushing portions is from about 0.5 mm to about 3 mm.
本發明之另一態樣，係提供一種用以移除一半導體晶片之裝置，半導體晶片係藉由一導電層固定於一基材上。此裝置包含一加熱部以及一推抵部。加熱部具有一加熱面，用以接觸並加熱半導體晶片之一上表面，藉此使導電層受熱熔化。推抵部由加熱部之一端向下延伸，推抵部鄰近加熱面之一側具有一推抵面，且推抵面大致垂直加熱面，推抵部用以對半導體晶片施予一接觸力，以移除半導體晶片。In another aspect of the invention, an apparatus for removing a semiconductor wafer is disclosed, the semiconductor wafer being affixed to a substrate by a conductive layer. The device comprises a heating portion and a pushing portion. The heating portion has a heating surface for contacting and heating an upper surface of the semiconductor wafer, whereby the conductive layer is melted by heat. The pushing portion extends downward from one end of the heating portion, and the pushing portion has a pushing surface adjacent to one side of the heating surface, and the pushing surface is substantially perpendicular to the heating surface, and the pushing portion is configured to apply a contact force to the semiconductor wafer. To remove the semiconductor wafer.
為了使本揭示內容的敘述更加詳盡與完備，下文針對了本發明的實施態樣與具體實施例提出了說明性的描述；但這並非實施或運用本發明具體實施例的唯一形式。以下所揭露的各實施例，在有益的情形下可相互組合或取代，也可在一實施例中附加其他的實施例，而無須進一步的記載或說明。The description of the embodiments of the present invention is intended to be illustrative and not restrictive. The embodiments disclosed herein may be combined or substituted with each other in an advantageous manner, and other embodiments may be added to an embodiment without further description or description.
在以下描述中，將詳細敘述許多特定細節以使讀者能夠充分理解以下的實施例。然而，可在無此等特定細節之情況下實踐本發明之實施例。在其他情況下，為簡化圖式，熟知的結構與裝置僅示意性地繪示於圖中。In the following description, numerous specific details are set forth However, embodiments of the invention may be practiced without these specific details. In other instances, well-known structures and devices are only schematically shown in the drawings in order to simplify the drawings.
第1圖繪示本發明一實施方式之加熱裝置100的立體示意圖。加熱裝置100包含加熱部110以及推抵部120。FIG. 1 is a perspective view of a heating device 100 according to an embodiment of the present invention. The heating device 100 includes a heating portion 110 and a pushing portion 120.
加熱部110具有加熱面112，用以加熱一物件。加熱部110可為諸如不鏽鋼材料或鋁合金等金屬材料所製成，使加熱部具有良好的熱傳導性能。在一實施例中，加熱面112實質上為平面。加熱面112的寬度W可例如為約1 mm至約5 mm，具體地為約2 mm。加熱面112的長度L可例如為約0.5公分至約3公分，具體地為1至2公分。加熱部110可使加熱面112產生約300℃以上之高溫。The heating portion 110 has a heating surface 112 for heating an object. The heating portion 110 may be made of a metal material such as a stainless steel material or an aluminum alloy, so that the heating portion has good heat conduction properties. In an embodiment, the heating surface 112 is substantially planar. The width W of the heating surface 112 can be, for example, from about 1 mm to about 5 mm, specifically about 2 mm. The length L of the heating surface 112 can be, for example, from about 0.5 cm to about 3 cm, specifically from 1 to 2 cm. The heating portion 110 can cause the heating surface 112 to generate a high temperature of about 300 ° C or higher.
在一實施方式中，加熱裝置100更包含一連接部130。連接部130實體連接加熱部110，並用以傳遞熱能至加熱部110。舉例而言，連接部130之頂部130a可用以連接至一熱源，例如熱風槍或烙鐵。因此，熱量可經由連接部130而傳遞至加熱部110的加熱面112。In an embodiment, the heating device 100 further includes a connecting portion 130. The connecting portion 130 is physically connected to the heating portion 110 and is used to transfer thermal energy to the heating portion 110. For example, the top 130a of the connection portion 130 can be used to connect to a heat source, such as a heat gun or a soldering iron. Therefore, heat can be transferred to the heating surface 112 of the heating portion 110 via the connection portion 130.
推抵部120由加熱部110之一端110a向下延伸。推抵部120鄰近加熱面112的一側具有一推抵面122，並且推抵面122大致垂直加熱面112。在一實施例中，推抵面122實質上為平面，並且推抵面122鄰接於加熱面112。在另一實施例中，推抵部120具有一底面126。底面126實質上也為一平面，底面126鄰接並垂直於推抵面122。換言之，底面126大致平行於加熱面112。底面126與加熱面112之間的垂直距離可例如為約1-3 mm。推抵部120的厚度T可例如為0.5-3 mm。The pushing portion 120 extends downward from one end 110a of the heating portion 110. The pushing portion 120 has a pushing surface 122 on a side adjacent to the heating surface 112, and the pushing surface 122 is substantially perpendicular to the heating surface 112. In an embodiment, the abutment surface 122 is substantially planar and the abutment surface 122 is adjacent to the heating surface 112. In another embodiment, the pushing portion 120 has a bottom surface 126. The bottom surface 126 is also substantially a flat surface, and the bottom surface 126 abuts and is perpendicular to the pushing surface 122. In other words, the bottom surface 126 is substantially parallel to the heating surface 112. The vertical distance between the bottom surface 126 and the heating surface 112 can be, for example, about 1-3 mm. The thickness T of the pushing portion 120 may be, for example, 0.5 to 3 mm.
第2圖繪示本發明另一實施方式之加熱裝置100的剖面示意圖。在本實施方式中，加熱裝置100中具有供氣通道134，供氣通道134由連接部130內部延伸至加熱部110以及推抵部120的內部。加熱部110具有複數個第一氣孔114，第一氣孔114具有一開口114a位於加熱面112上。類似地，推抵部120具有複數個第二氣孔124，第二氣孔124具有一開口124a位於推抵面122上。供氣通道134連通這些第一氣孔114以及第二氣孔124。因此，可以藉由供氣通道134供給高溫空氣A至第一氣孔114以及第二氣孔124，使高溫空氣A由開口114a及開口124a流出，而得以加熱一物件。在一實施例中，可以僅配置加熱部110的第一氣孔114，而沒有設置推抵部120的第二氣孔124。2 is a cross-sectional view showing a heating device 100 according to another embodiment of the present invention. In the present embodiment, the heating device 100 has an air supply passage 134 that extends from the inside of the connecting portion 130 to the inside of the heating portion 110 and the pushing portion 120. The heating portion 110 has a plurality of first air holes 114, and the first air holes 114 have an opening 114a on the heating surface 112. Similarly, the pushing portion 120 has a plurality of second air holes 124, and the second air holes 124 have an opening 124a on the pushing surface 122. The air supply passage 134 communicates with the first air holes 114 and the second air holes 124. Therefore, the high temperature air A can be supplied to the first air hole 114 and the second air hole 124 through the air supply passage 134, so that the high temperature air A flows out from the opening 114a and the opening 124a to heat an object. In an embodiment, only the first air hole 114 of the heating portion 110 may be disposed, and the second air hole 124 of the pushing portion 120 may not be disposed.
第3圖繪示本發明又一實施方式之加熱裝置100的剖面示意圖。在本實施方式中，推抵部120遠離加熱面112之一側具有一斜面128。推抵部120之底部120a的厚度T可例如為約0.5 mm至約3 mm。FIG. 3 is a cross-sectional view showing a heating device 100 according to still another embodiment of the present invention. In the present embodiment, the pushing portion 120 has a slope 128 away from one side of the heating surface 112. The thickness T of the bottom portion 120a of the pushing portion 120 may be, for example, about 0.5 mm to about 3 mm.
本發明之加熱裝置100係用以移除固設在基材上之一物件。在一具體應用中，物件為半導體晶片140，且半導體晶片140藉由導電層142固定於主動陣列基板144上，如第3圖所示。導電層142例如為異向性導電膠層(ACF)。主動陣列基板144上還配置有彩色濾光片146。當為了分析的需要或其他原因而必須移除半導體晶片140時，便可使用加熱裝置100來移除半導體晶片。以下將詳述其工作原理。The heating device 100 of the present invention is for removing an object fixed on a substrate. In one particular application, the article is a semiconductor wafer 140, and the semiconductor wafer 140 is affixed to the active array substrate 144 by a conductive layer 142, as shown in FIG. The conductive layer 142 is, for example, an anisotropic conductive paste layer (ACF). A color filter 146 is further disposed on the active array substrate 144. When the semiconductor wafer 140 has to be removed for analysis or other reasons, the heating device 100 can be used to remove the semiconductor wafer. The working principle will be detailed below.
首先，將加熱裝置100移動至適當位置，使加熱部110的加熱面112接觸半導體晶片140的上表面，推抵部120的推抵面122接觸半導體晶片140的側表面。然後，藉由加熱部110的加熱面112來加熱半導體晶片140，使半導體晶片140的溫度升高，並藉由熱傳導原理，使半導體晶片140下方的導電層142受熱熔化。此時，沿箭頭F的方向移動加熱裝置100，使推抵部120的推抵面122對半導體晶片140施予一接觸力，而將半導體晶片140由主動陣列基板144上移除。First, the heating device 100 is moved to an appropriate position such that the heating surface 112 of the heating portion 110 contacts the upper surface of the semiconductor wafer 140, and the pushing surface 122 of the pushing portion 120 contacts the side surface of the semiconductor wafer 140. Then, the semiconductor wafer 140 is heated by the heating surface 112 of the heating portion 110 to raise the temperature of the semiconductor wafer 140, and the conductive layer 142 under the semiconductor wafer 140 is thermally melted by the principle of heat conduction. At this time, the heating device 100 is moved in the direction of the arrow F, so that the pushing surface 122 of the pushing portion 120 applies a contact force to the semiconductor wafer 140, and the semiconductor wafer 140 is removed from the active array substrate 144.
在上述應用中，因為半導體晶片140與彩色濾光片146之間的間隙寬度是有限制的，例如為約3 mm。因此，根據本發明之一實施方式，推抵部120之厚度T為約0.5 mm至約3 mm。此外，為了避免在移除半導體晶片140的過程中損害半導體晶片140，推抵面122大致垂直加熱面112。所謂「大致垂直」是指推抵面122實質上垂直於加熱面112，使加熱面112與推抵面122可分別穩固地接觸半導體晶片140的上表面及側表面。例如，推抵面122與加熱面112之間形成一夾角為約85-95度，更明確地為約90度。In the above application, since the gap width between the semiconductor wafer 140 and the color filter 146 is limited, for example, about 3 mm. Therefore, according to an embodiment of the present invention, the thickness T of the pushing portion 120 is from about 0.5 mm to about 3 mm. Moreover, to avoid damaging the semiconductor wafer 140 during removal of the semiconductor wafer 140, the pushing surface 122 is substantially perpendicular to the heating surface 112. By "substantially perpendicular" it is meant that the abutment surface 122 is substantially perpendicular to the heating surface 112 such that the heating surface 112 and the abutment surface 122 are in stable contact with the upper and side surfaces of the semiconductor wafer 140, respectively. For example, the angle between the abutment surface 122 and the heating surface 112 is about 85-95 degrees, more specifically about 90 degrees.
第4圖繪示本發明再一實施方式之加熱裝置100的剖面示意圖。在本實施方式中，推抵面122不直接鄰接或連接加熱面112。具體而言，推抵面122與加熱面112之間具有一凹槽132。凹槽132用以容置半導體晶片140的邊緣144，以避免在移除半導體晶片140的過程中，造成半導體晶片140的邊緣144破裂。4 is a cross-sectional view showing a heating device 100 according to still another embodiment of the present invention. In the present embodiment, the abutting surface 122 does not directly adjoin or connect the heating surface 112. Specifically, there is a groove 132 between the pushing surface 122 and the heating surface 112. The recess 132 is for receiving the edge 144 of the semiconductor wafer 140 to avoid rupturing the edge 144 of the semiconductor wafer 140 during removal of the semiconductor wafer 140.
由上述本發明實施方式可知，應用本發明可以迅速地移除原本固設在基材上的物件，並且有效地防止物件損毀破裂。根據本發明之實施方式，可適用於移除顯示面板上的半導體晶片，避免半導體晶片在移除的過程中破裂。It can be seen from the above embodiments of the present invention that the application of the present invention can quickly remove an object originally fixed on a substrate, and effectively prevent the object from being damaged and broken. According to embodiments of the present invention, it is applicable to remove a semiconductor wafer on a display panel to prevent the semiconductor wafer from rupturing during removal.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100．．．加熱裝置100. . . heating equipment
110．．．加熱部110. . . Heating department
110a．．．加熱部之一端110a. . . One end of the heating section
112．．．加熱面112. . . Heating surface
114．．．第一氣孔114. . . First vent
114a．．．開口114a. . . Opening
120．．．推抵部120. . . Pushing department
120a．．．底部120a. . . bottom
122．．．推抵面122. . . Push face
124．．．第二氣孔124. . . Second air hole
124a．．．開口124a. . . Opening
126．．．底面126. . . Bottom
128．．．斜面128. . . Bevel
130．．．連接部130. . . Connection
130a．．．頂部130a. . . top
132．．．凹槽132. . . Groove
134．．．供氣通道134. . . Gas supply channel
140．．．半導體晶片140. . . Semiconductor wafer
142．．．導電層142. . . Conductive layer
144．．．主動陣列基板144. . . Active array substrate
146．．．彩色濾光片146. . . Color filter
W．．．寬度W. . . width
L．．．長度L. . . length
T．．．厚度T. . . thickness
F．．．箭頭F. . . arrow
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.
第1圖繪示本發明一實施方式之加熱裝置的立體示意圖。Fig. 1 is a perspective view showing a heating apparatus according to an embodiment of the present invention.
第2圖繪示本發明另一實施方式之加熱裝置的剖面示意圖。2 is a cross-sectional view showing a heating device according to another embodiment of the present invention.
第3圖繪示本發明又一實施方式之加熱裝置的剖面示意圖。3 is a cross-sectional view showing a heating device according to still another embodiment of the present invention.
第4圖繪示本發明再一實施方式之加熱裝置的剖面示意圖。4 is a cross-sectional view showing a heating device according to still another embodiment of the present invention.
100．．．加熱裝置100. . . heating equipment
110．．．加熱部110. . . Heating department
110a．．．加熱部之一端110a. . . One end of the heating section
112．．．加熱面112. . . Heating surface
120．．．推抵部120. . . Pushing department
122．．．推抵面122. . . Push face
126．．．底面126. . . Bottom
130．．．連接部130. . . Connection
130a．．．頂部130a. . . top
W．．．寬度W. . . width
L．．．長度L. . . length
T．．．厚度T. . . thickness
Claims (12)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110402497.6A CN102489817B (en) | 2011-12-02 | 2011-12-02 | Apparatus for removing a half semiconductor chip |
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| Publication Number | Publication Date |
|---|---|
| TW201324630A TW201324630A (en) | 2013-06-16 |
| TWI473177B true TWI473177B (en) | 2015-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW101102206A TWI473177B (en) | 2011-12-02 | 2012-01-19 | Heating device |
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| CN (1) | CN102489817B (en) |
| TW (1) | TWI473177B (en) |
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|---|---|---|---|---|
| CN106292020A (en) * | 2015-05-27 | 2017-01-04 | 凌巨科技股份有限公司 | Heater body and heating unit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041012A1 (en) * | 2002-09-03 | 2004-03-04 | International Business Machines Corporation | Low strain chip removal apparatus |
| CN102045953A (en) * | 2009-10-22 | 2011-05-04 | 西安中科麦特电子技术设备有限公司 | Heating component of reflow soldering machine |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410696A (en) * | 1987-07-02 | 1989-01-13 | Fujitsu Ltd | Apparatus for removing flat-lead-type component |
| US5054681A (en) * | 1990-07-25 | 1991-10-08 | Kim Henry I | Component desoldering tool |
| CN2115852U (en) * | 1992-02-21 | 1992-09-16 | 吴泽民 | Tin soldering bit for quick welding electronic device |
| CN2189024Y (en) * | 1994-05-29 | 1995-02-08 | 孟凡寅 | Shovel shaped soldering iron |
| CN2329473Y (en) * | 1998-06-29 | 1999-07-21 | 周晓元 | Dual-purpose electric soldering iron for fast detaching integrated circuit chip |
| US7168609B2 (en) * | 2002-09-03 | 2007-01-30 | International Business Machines Corporation | Method and apparatus for removing known good die |
| CN201397435Y (en) * | 2009-05-26 | 2010-02-03 | 上海晨兴希姆通电子科技有限公司 | IC removing device |
-
2011
- 2011-12-02 CN CN201110402497.6A patent/CN102489817B/en not_active Expired - Fee Related
-
2012
- 2012-01-19 TW TW101102206A patent/TWI473177B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040041012A1 (en) * | 2002-09-03 | 2004-03-04 | International Business Machines Corporation | Low strain chip removal apparatus |
| CN102045953A (en) * | 2009-10-22 | 2011-05-04 | 西安中科麦特电子技术设备有限公司 | Heating component of reflow soldering machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102489817B (en) | 2015-02-04 |
| CN102489817A (en) | 2012-06-13 |
| TW201324630A (en) | 2013-06-16 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |