TWI467162B - Electro optical modulator electro optical sensor and detecting method thereof - Google Patents

Electro optical modulator electro optical sensor and detecting method thereof Download PDF

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TWI467162B
TWI467162B TW100132013A TW100132013A TWI467162B TW I467162 B TWI467162 B TW I467162B TW 100132013 A TW100132013 A TW 100132013A TW 100132013 A TW100132013 A TW 100132013A TW I467162 B TWI467162 B TW I467162B
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electro
tested
modulation device
optical
conductive film
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TW201243318A (en
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yong tong Zou
Hau Wei Wang
Ding Kun Liu
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Ind Tech Res Inst
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Description

電光調變裝置、電光檢測器及其檢測方法Electro-optical modulation device, electro-optical detector and detection method thereof

本揭露係關於一種電光調變裝置、電光檢測器及其檢測方法,特別是關於一種可應用於撓性待測物之電光調變裝置、電光檢測器及其檢測方法。The present disclosure relates to an electro-optic modulation device, an electro-optical detector, and a detection method thereof, and more particularly to an electro-optical modulation device, an electro-optical detector, and a detection method thereof applicable to a flexible object to be tested.

傳統的電路檢測設備常利用探針接觸待測物並施予電壓,檢驗待測物的電路狀況,如短路、斷路等。習知的接觸式探針電路檢測設備常應用於檢測半導體晶粒的製程及PCB板製程的檢測。隨著半導體製程的線寬越來越小,利用探針的檢測方式勢必受到探針物理尺寸的限制,且應用於小尺寸線寬檢測之探針的製作費用也相當昂貴。當待測物的面積越來越大,檢測所需的速度越來越快,全面檢測的需求越來越多時,以抽檢的方式,利用探針接觸來檢測電路則越來越不符合檢測的需求。Conventional circuit detection devices often use a probe to contact a test object and apply a voltage to verify the circuit condition of the object to be tested, such as a short circuit or an open circuit. Conventional contact probe circuit detection devices are commonly used to detect semiconductor die processes and PCB board process inspection. As the line width of the semiconductor process becomes smaller and smaller, the detection method using the probe is bound to be limited by the physical size of the probe, and the probe for the small-line line width detection is also expensive to manufacture. When the area of the object to be tested is getting larger and larger, the speed required for detection is getting faster and faster, and the demand for comprehensive detection is increasing, the detection of the circuit by probe contact is more and more inconsistent with detection. Demand.

如果經過雷射圖案化製程後的待測物蝕刻並不完全時,畫素會形成壞點,使良率下降。此外,在待測物製程中,待測物的電路可能會產生短/斷路、雜質、刮傷等現象。上述現象可經由快速檢測的非接觸式檢測器檢測,以節省後段製程的成本,並確保產品的品質。If the etching of the object to be tested after the laser patterning process is not complete, the pixel will form a dead pixel and the yield will decrease. In addition, in the process of the object to be tested, the circuit of the object to be tested may cause short/open circuit, impurities, scratches, and the like. The above phenomenon can be detected by a fast-detecting non-contact detector to save the cost of the back-end process and ensure the quality of the product.

圖1為一習知電光檢測器,該電光檢測器100包含產生光線之光源14、調變自光源14發射光線之調變器10、一鏡面10-3並自該鏡面10-3反射光線,反射的比率係由電場強度所決定、一分光鏡12、一透鏡16,可供聚焦自調變器10反射的光線、將光線轉變成影像訊號之一CCD攝影機17以及將影像訊號轉變成數位元影像訊號之影像處理器18。而該數位元影像訊號係由一顯示器20所顯示而分析。該調變器10包含一調變器本體10-2、一鏡面10-3以及一支撐架10-1。該調變器本體10-2為六角形且由該支撐架10-1所支撐,該調變器本體10-2單側有導電膜設置。該鏡面10-3形成於該調變器本體10-2的底部。該調變器本體10-2包含一電極,其連接至一外部電源,該外部電源供應一參考電壓,而調變器本體10-2的電光部係經由調變器本體10-2散射入射光並傳輸該反射光至分光鏡12,反射光的比率係由調變器本體10-2的電場強度所決定。1 is a conventional electro-optical detector 100. The electro-optical detector 100 includes a light source 14 for generating light, a modulator 10 for modulating the light emitted from the light source 14, a mirror surface 10-3, and reflecting light from the mirror surface 10-3. The ratio of reflection is determined by the intensity of the electric field, a beam splitter 12, a lens 16, which can focus the light reflected from the modulator 10, convert the light into a video signal CCD camera 17, and convert the image signal into a digit. Image processor 18 of image signal. The digital image signal is analyzed by a display 20. The modulator 10 includes a modulator body 10-2, a mirror surface 10-3, and a support frame 10-1. The modulator body 10-2 is hexagonal and supported by the support frame 10-1. The modulator body 10-2 is provided with a conductive film on one side. The mirror surface 10-3 is formed at the bottom of the modulator body 10-2. The modulator body 10-2 includes an electrode connected to an external power source, the external power source supplies a reference voltage, and the electro-optic portion of the modulator body 10-2 scatters the incident light via the modulator body 10-2. The reflected light is transmitted to the beam splitter 12, and the ratio of the reflected light is determined by the electric field strength of the modulator body 10-2.

藉由數位元影像的不同灰階程度,待測物的電路和蝕刻殘留量則可被確定,進而確定在製程中導電物質是否蝕刻完全,或確定表面瑕疵對導電圖案的電性影響。如圖1所示,調變器10與待測物22之間必須保持一定的距離(約10um)。且需分別施予正負電壓,使其形成電容效應,產生感應電場進而驅動電光調變器10。由於距離(約10um)太小,很容易造成電光調製器10的反射鏡面10-3磨損,增加維護的成本。且該反射鏡面10-3無法使用傳統的鍍膜方式,因此製造成本相當昂貴。By varying the degree of gray scale of the digital image, the circuit and etch residual of the object to be tested can be determined to determine whether the conductive material is completely etched during the process, or to determine the electrical influence of the surface 瑕疵 on the conductive pattern. As shown in FIG. 1, a certain distance (about 10 um) must be maintained between the modulator 10 and the object to be tested 22. The positive and negative voltages are respectively applied to form a capacitive effect, and an induced electric field is generated to drive the electro-optical modulator 10. Since the distance (about 10 um) is too small, it is easy to cause the mirror surface 10-3 of the electro-optic modulator 10 to wear, which increases the cost of maintenance. Moreover, the mirror surface 10-3 cannot use the conventional coating method, and thus the manufacturing cost is quite expensive.

為了改善反射鏡面磨損,習知技術於反射鏡面外,塗佈一層緩衝層而減少反射鏡面被直接磨損。但是上述先前技術並無法快速地量測具有翹曲性質的待測物,如軟性電路板等等。In order to improve the mirror surface wear, the prior art is coated with a buffer layer outside the mirror surface to reduce the direct wear of the mirror surface. However, the above prior art cannot quickly measure a test object having a warping property such as a flexible circuit board or the like.

再者,一般的外觀檢測無法得知待測物的透明導電膜圖案(如:ITO或AZO)的電性狀況。由於待測物(如觸控面板)具有極高的穿透率(高於90%),因而使用一般的自動光學檢測系統(AOI)檢測外觀影像所得到的影像對比相當低(尤其是跨橋部分的上下兩層ITO結構),很容易產生誤判的情況。Furthermore, the general appearance detection cannot know the electrical condition of the transparent conductive film pattern (for example, ITO or AZO) of the object to be tested. Since the object to be tested (such as a touch panel) has a very high transmittance (higher than 90%), the image contrast obtained by detecting an appearance image using a general automatic optical inspection system (AOI) is relatively low (especially across bridges). Part of the upper and lower two layers of ITO structure), it is easy to produce false positives.

本揭露提供一種電光調變裝置,其包含一本體、一導電膜以及一透明保護膜。該本體含有一第一表面及一第二表面。該導電膜設置於該第一表面。該透明保護膜設置於該第二表面並位於一待測物之上。The present disclosure provides an electro-optical modulation device including a body, a conductive film, and a transparent protective film. The body includes a first surface and a second surface. The conductive film is disposed on the first surface. The transparent protective film is disposed on the second surface and located on an object to be tested.

本揭露亦提供一種電光檢測器,其包含一光源產生裝置、一電光調變裝置、一支撐模組以及一取像模組。該光源產生裝置發射一光束。該電光調變裝置調變該光束後該光束入射一待測物。該支撐模組支撐該待測物並使調變後的該光束入射該支撐模組。該取像模組轉換該支撐模組所反射的該光束而成一影像訊號。The present disclosure also provides an electro-optical detector comprising a light source generating device, an electro-optical modulation device, a support module and an image capturing module. The light source generating device emits a light beam. The electro-optical modulation device modulates the beam and the beam is incident on a sample to be tested. The support module supports the object to be tested and causes the modulated light beam to enter the support module. The image capturing module converts the light beam reflected by the support module to form an image signal.

本揭露亦提供一種檢測方法,其包含下列步驟:施加驅動電壓於該待測物;將該電光調變裝置接地;投射該光束於該電光調變裝置;擷取該電光調變裝置之該影像訊號;以及藉由該影像訊號判斷該待測物是否具有缺陷。The disclosure also provides a detection method, comprising the steps of: applying a driving voltage to the object to be tested; grounding the electro-optical modulation device; projecting the beam to the electro-optic modulation device; and capturing the image of the electro-optical modulation device a signal; and determining whether the object to be tested has a defect by the image signal.

上文已相當廣泛地概述本揭露之技術特徵,俾使下文之本揭露詳細描述得以獲得較佳瞭解。構成本揭露之申請專利範圍標的之其他技術特徵將描述於下文。本揭露所屬技術領域中具有通常知識者應瞭解,可相當容易地利用下文揭示之概念與特定實施例可作為修改或設計其他結構或製程而實現與本揭露相同之目的。本揭露所屬技術領域中具有通常知識者亦應瞭解,這類等效建構無法脫離後附之申請專利範圍所界定之本揭露的精神和範圍。The technical features of the present disclosure have been broadly described above, and the detailed description of the present disclosure will be better understood. Other technical features that form the subject matter of the claims of the present disclosure will be described below. It is to be understood by those of ordinary skill in the art that the present invention may be practiced otherwise. It is also to be understood by those of ordinary skill in the art that this invention is not limited to the spirit and scope of the disclosure as defined by the appended claims.

本揭露在此所探討的方向為電光調變裝置、電光檢測器及其檢測方法。為了能徹底地瞭解本揭露,將在下列的描述中提出詳盡的步驟及結構。顯然地,本揭露的施行並未限定於相關領域之技藝者所熟習的特殊細節。另一方面,眾所周知的結構或步驟並未描述於細節中,以避免造成本揭露不必要之限制。本揭露的較佳實施例會詳細描述如下,然而除了這些詳細描述之外,本揭露還可以廣泛地施行在其他的實施例中,且本揭露的範圍不受限定,其以之後的專利範圍為準。The directions discussed herein are electro-optical modulation devices, electro-optical detectors, and detection methods thereof. In order to fully understand the present disclosure, detailed steps and structures will be set forth in the following description. Obviously, the implementation of the present disclosure is not limited to the specific details familiar to those skilled in the relevant art. On the other hand, well-known structures or steps are not described in detail to avoid unnecessarily limiting the disclosure. The preferred embodiments of the present disclosure will be described in detail below, but the disclosure may be widely practiced in other embodiments, and the scope of the disclosure is not limited, which is subject to the scope of the following patents. .

本揭露係提供一種電光調變裝置、電光檢測器及其檢測方法。本揭露主要為利用待測物與電光調變裝置之間所產生的電容所產生感應電場來驅動電光調變裝置,進而獲得調變後的影像資料。此外由於本揭露可用來檢測微小化的待測物並可快速地以接觸式或非接觸式的方式進行檢測,因此可應用於前案技術所無法應用的撓性或具有翹曲性質的待測物上。The disclosure provides an electro-optical modulation device, an electro-optical detector, and a detection method thereof. The disclosure mainly uses the induced electric field generated by the capacitance generated between the object to be tested and the electro-optical modulation device to drive the electro-optical modulation device, thereby obtaining the modulated image data. In addition, since the present disclosure can be used to detect a miniaturized object to be tested and can be quickly detected in a contact or non-contact manner, it can be applied to a flexible or warped property to be tested which cannot be applied by the prior art. On the object.

本揭露之電光調變裝置、電光檢測器及其檢測方法可應用的層面包含觸控面板之透明導電膜(ITO)的圖案製程檢測、半導體晶粒製程檢測、薄膜電晶體液晶陣列製程檢測、太陽能之透明導電膜的圖案製程檢測以及軟性顯示器之透明導電膜的圖案檢測。The applicable electro-optic modulation device, electro-optical detector and detection method thereof include a pattern processing detection of a transparent conductive film (ITO) of a touch panel, a semiconductor die process detection, a thin film transistor liquid crystal array process detection, and a solar energy The pattern process detection of the transparent conductive film and the pattern detection of the transparent conductive film of the flexible display.

如圖2之本揭露的一實施例之電光調變裝置30所示,電光調變裝置30包含一本體31、一導電膜34以及一透明保護膜35。該本體31含有一第一表面32及一第二表面33。該導電膜34設置於該第一表面32,而該透明保護膜35則設置於第二表面33並直接接觸待測物(圖未示)。在此實施例中,導電膜34為透明導電膜(ITO)可供光束通過。該電光調變裝置30之本體31可為一高分子散佈型液晶顯示器(PDLC顯示器)或是一光學晶體,該光學晶體之材質選自磷酸二氫鉀、磷酸二氘鉀及磷酸二氫銨組成之群。當導電膜34電性連接電源(圖未示)時,該透明保護膜35可與待測物(圖未示)保持一定距離或與待測物直接接觸即可產生類似電容的效應,進而驅動電光調變裝置本體31調變入射光束,以供產生影像。As shown in the electro-optic modulation device 30 of the embodiment of the present disclosure, the electro-optic modulation device 30 includes a body 31, a conductive film 34, and a transparent protective film 35. The body 31 includes a first surface 32 and a second surface 33. The conductive film 34 is disposed on the first surface 32, and the transparent protective film 35 is disposed on the second surface 33 and directly contacts the object to be tested (not shown). In this embodiment, the conductive film 34 is a transparent conductive film (ITO) through which a light beam can pass. The body 31 of the electro-optical modulation device 30 can be a polymer-dispersed liquid crystal display (PDLC display) or an optical crystal. The material of the optical crystal is selected from the group consisting of potassium dihydrogen phosphate, potassium dipotassium phosphate and ammonium dihydrogen phosphate. Group. When the conductive film 34 is electrically connected to a power source (not shown), the transparent protective film 35 can maintain a certain distance from the object to be tested (not shown) or directly contact with the object to be tested to generate a similar capacitance effect, thereby driving The electro-optical modulation device body 31 modulates the incident beam for image generation.

圖3顯示本揭露另一實施例之電光調變裝置30',電光調變裝置30'包含一本體31、導電膜34'、透明保護膜35及透光基板36。該本體31與透明保護膜35的結構與連接關係與上述實施例相類似,在此不在贅述。該透光基板36設置於該導電膜34'上。由於該透光基板36之面積大於該本體31,當導電膜34'設置於該透光基板36上時,導電膜34'亦設置於超出該本體31之外的該透光基板36上。FIG. 3 shows an electro-optical modulation device 30 ′ according to another embodiment of the present disclosure. The electro-optical modulation device 30 ′ includes a body 31 , a conductive film 34 ′, a transparent protective film 35 , and a transparent substrate 36 . The structure and connection relationship between the body 31 and the transparent protective film 35 are similar to those of the above embodiment, and are not described herein. The transparent substrate 36 is disposed on the conductive film 34'. The conductive film 34 ′ is also disposed on the transparent substrate 36 outside the body 31 when the conductive film 34 ′ is disposed on the transparent substrate 36 .

如圖3所示之實施例中,本揭露應用於前案電光調製器結構過於複雜、大面積製作困難、製造成本昂貴,且容易使鏡面磨損,而增加檢測成本。因此本揭露利用透光基板36作為基板,並塗佈導電膜34'於透光基板36上後,再塗佈上本體31材料(如高分子散佈型液晶或光學晶體,而光學晶體之材質選自磷酸二氫鉀、磷酸二氘鉀及磷酸二氫銨組成之群)。最後將透明保護膜35設置於本體31上。在此實施例中,透明保護膜35具有耐磨和抗刮的特性,以保護液晶層,此架構可以使電光調製器30'結構避免過於複雜,大面積製作,製造成本昂貴,也使機台維護成本降低。In the embodiment shown in FIG. 3, the disclosure is applicable to the structure of the electro-optic modulator of the prior case being too complicated, difficult to manufacture in a large area, expensive in manufacturing, and easy to wear the mirror surface, thereby increasing the detection cost. Therefore, the present disclosure uses the transparent substrate 36 as a substrate, and applies the conductive film 34' on the transparent substrate 36, and then applies the upper body 31 material (such as a polymer dispersed liquid crystal or an optical crystal, and the optical crystal material is selected. a group consisting of potassium dihydrogen phosphate, potassium dipotassium phosphate and ammonium dihydrogen phosphate). Finally, the transparent protective film 35 is placed on the body 31. In this embodiment, the transparent protective film 35 has abrasion resistance and scratch resistance to protect the liquid crystal layer. This structure can make the electro-optic modulator 30' structure avoid excessive complexity, large-area fabrication, high manufacturing cost, and also make the machine Maintenance costs are reduced.

上述圖2與圖3實施例之電光調變裝置30及電光調變裝置30'並無任何鏡面的設置,且本揭露的電光調變裝置30及電光調變裝置30'具有透明保護膜35可供與待測物直接接觸或非直接接觸並檢測之,以利檢測具有翹曲特性或表面不平整的待測物。The electro-optical modulation device 30 and the electro-optical modulation device 30 ′ of the embodiment of the present invention are not provided with any mirror surface, and the electro-optic modulation device 30 and the electro-optical modulation device 30 ′ of the present disclosure have a transparent protective film 35 . It is directly or indirectly contacted with the object to be tested and detected to facilitate the detection of the object to be tested having warpage characteristics or surface irregularities.

本揭露檢測的待測物為圖案化製程後的導電膜。由於導電膜經過圖案蝕刻製程後,若蝕刻不完全,會導致導電膜的線路設計與原先設計有差異,而產生短路或斷路現象。若蝕刻導電膜有些許殘留時,本揭露之電光檢測器同時可檢測刮傷、灰塵、碰撞或殘留等現象。The object to be tested detected in the present disclosure is a conductive film after the patterning process. Since the conductive film is subjected to the pattern etching process, if the etching is incomplete, the circuit design of the conductive film may be different from the original design, and a short circuit or an open circuit may occur. If the etched conductive film is somewhat residual, the electro-optical detector of the present invention can simultaneously detect scratches, dust, collision or residue.

如圖4之實施例所示,電光檢測器40包含一光源產生裝置420、一電光調變裝置430、一支撐模組440以及一取像模組450。該光源產生裝置420發射一光束,該光束入射電光檢測器40之分光鏡410。分光鏡410可將光束反射至電光調變裝置430。電光調變裝置430包含一本體431、一導電膜432以及一透明保護膜433,其中該本體431含有一第一表面4311及一第二表面4312,該導電膜432設置於該第一表面4311,該透明保護膜433設置於該第二表面4312並直接接觸或非直接接觸該待測物490,因此能因應不同翹曲性質的待測物,並可快速地檢測微小結構並減少誤判的電光檢測器。該待測物490另包含一透明基板441,該透明基板441具有透明導電膜(如ITO或AZO),該透明基板441亦可為可撓性的透明基板441。其中該本體431可為一高分子散佈型液晶顯示器(PDLC顯示器)或為一光學晶體,該光學晶體之材質選自磷酸二氫鉀、磷酸二氘鉀及磷酸二氫銨組成之群。As shown in the embodiment of FIG. 4, the electro-optical detector 40 includes a light source generating device 420, an electro-optical modulation device 430, a support module 440, and an image capturing module 450. The light source generating device 420 emits a light beam that is incident on the beam splitter 410 of the electro-optic detector 40. The beam splitter 410 can reflect the light beam to the electro-optical modulation device 430. The electro-optical modulation device 430 includes a body 431, a conductive film 432, and a transparent protective film 433. The body 431 includes a first surface 4311 and a second surface 4312. The conductive film 432 is disposed on the first surface 4311. The transparent protective film 433 is disposed on the second surface 4312 and directly or indirectly contacts the object to be tested 490, so that the object can be tested according to different warping properties, and the micro structure can be quickly detected and the electro-optical detection of false positives can be reduced. Device. The test object 490 further includes a transparent substrate 441 having a transparent conductive film (such as ITO or AZO), and the transparent substrate 441 may also be a flexible transparent substrate 441. The body 431 can be a polymer-dispersed liquid crystal display (PDLC display) or an optical crystal. The material of the optical crystal is selected from the group consisting of potassium dihydrogen phosphate, potassium dipotassium phosphate and ammonium dihydrogen phosphate.

如圖4所示,支撐模組440包含一反射鏡442。,且該支撐模組440可支撐該待測物490並允許經由電光調變裝置430調變後的該光束入射該支撐模組440之反射鏡442。本發明另包含一電源模組460,該電源模組460分別電性連接該導電膜432及該待測物490之透明基板441。當電源模組460分別電性連接該導電膜432及該透明基板441時,電光調變裝置430接觸或接近待測物490後,待測物490上的透明導電膜圖案491與電光調變裝置430形成電容狀態,進而產生感應電場並驅動電光調變裝置430。由於感應電場將驅動電光調變裝置430,因此待測物490的圖案491會間接呈現於電光調變裝置430上。光源產生裝置420的光束入射於該電光調變裝置430後,取像模組450將擷取電光調變裝置430所調變的感應電壓影像,並轉變該電光調變裝置430所反射的該光束而成一影像訊號。藉由影像訊號的灰階強度,透明導電膜的殘留狀況可被檢測。相同地,製程所產生的缺陷,也可利用本揭露所提出的檢測方法,而檢測缺陷是否會對透明導電膜之線路產生電性影響。As shown in FIG. 4, the support module 440 includes a mirror 442. The support module 440 can support the object to be tested 490 and allow the light beam modulated by the electro-optical modulation device 430 to enter the mirror 442 of the support module 440. The power module 460 is electrically connected to the conductive film 432 and the transparent substrate 441 of the object to be tested 490, respectively. When the power module 460 is electrically connected to the conductive film 432 and the transparent substrate 441, respectively, after the electro-optical modulation device 430 contacts or approaches the object to be tested 490, the transparent conductive film pattern 491 on the object to be tested 490 and the electro-optic modulation device 430 forms a capacitive state, which in turn generates an induced electric field and drives electro-optic modulation device 430. Since the induced electric field will drive the electro-optical modulation device 430, the pattern 491 of the object to be tested 490 will be indirectly presented on the electro-optical modulation device 430. After the light beam of the light source generating device 420 is incident on the electro-optical modulation device 430, the image capturing module 450 captures the induced voltage image modulated by the electro-optical modulation device 430, and converts the light beam reflected by the electro-optical modulation device 430. Become an image signal. The residual state of the transparent conductive film can be detected by the gray scale intensity of the image signal. Similarly, the defects generated by the process can also utilize the detection method proposed by the present disclosure to detect whether the defect has an electrical influence on the line of the transparent conductive film.

如圖4所示,該電光調變裝置430調變該光束後,部分該光束入射至待測物490。該支撐模組440之反射鏡442係設置於透明基板441之下,在此實施例中反射鏡442直接接觸透明基板441,然而在其他實施例中反射鏡442與待側物490之透明基板441存在一間隙,且該反射鏡442係反射入射於該待測物490之該光束,因此反射鏡442可提高由取像模組450(如感光耦合元件(CCD)攝影機或互補式金屬氧化物半導體攝影機)所擷取影像的對比值,進而減少誤判的情況發生。然而在如圖5所示的實施例中,電光檢測器40'之支撐模組440'亦可省略反射鏡442。As shown in FIG. 4, after the electro-optical modulation device 430 modulates the beam, part of the beam is incident on the object to be tested 490. The mirror 442 of the support module 440 is disposed under the transparent substrate 441. In this embodiment, the mirror 442 directly contacts the transparent substrate 441. However, in other embodiments, the mirror 442 and the transparent substrate 441 of the object 490 to be side 490. There is a gap, and the mirror 442 reflects the light beam incident on the object to be tested 490, so the mirror 442 can be improved by the image capturing module 450 (such as a photosensitive coupling element (CCD) camera or a complementary metal oxide semiconductor The camera captures the contrast value of the image, which in turn reduces the occurrence of false positives. However, in the embodiment shown in FIG. 5, the support module 440' of the electro-optic detector 40' may also omit the mirror 442.

復參照圖3,電光調變裝置30'的透光基板36可為BK7玻璃或乙烯對苯二甲酸酯(PET)軟板。在此實施例中,透明保護膜35厚度越薄愈好,較佳的厚度範圍約5微米至15微米之間。透明保護膜35的主要用途在於保護本體31,並使本體31與待測物之間產生電容效應,透明保護膜35的材質可為金屬、有機物、無機物或陶瓷等材料。然而如圖6及圖7之電光檢測器40"、40'''實施例(分別為圖4及圖5的變化實施例)所示,電光調變裝置430'之透明保護膜433亦可併入本體431,而使本體431具有抗磨耐刮的特性。上述各種電光檢測器的實施例的光束將會穿透電光調變裝置及待測物,而前案的光束在電光調變裝置的反射鏡面則被反射而並不會照射至待測物上,因此本揭露之影像對比度較佳。Referring back to FIG. 3, the light transmissive substrate 36 of the electro-optical modulation device 30' may be a BK7 glass or an ethylene terephthalate (PET) soft board. In this embodiment, the thinner the transparent protective film 35 is, the preferred thickness range is between about 5 microns and 15 microns. The main purpose of the transparent protective film 35 is to protect the body 31 and to create a capacitive effect between the body 31 and the object to be tested. The material of the transparent protective film 35 may be metal, organic, inorganic or ceramic. However, as shown in the embodiments of the electro-optical detectors 40", 40"" of FIGS. 6 and 7 (various embodiments of FIGS. 4 and 5, respectively), the transparent protective film 433 of the electro-optical modulation device 430' may be combined. The body 431 is provided with the anti-wear and scratch resistance characteristics. The light beam of the embodiment of the above various electro-optical detectors will penetrate the electro-optical modulation device and the object to be tested, and the beam of the former case is in the electro-optic modulation device. The mirror surface is reflected and does not illuminate the object to be tested, so the image contrast of the present disclosure is better.

再者,如圖8所示為一種利用上述裝置的檢測方法,包含下列步驟:步驟8010施加驅動電壓於該待測物;步驟8020將該電光調變裝置接地;步驟8030投射該光束於該電光調變裝置;步驟8040擷取該電光調變裝置之該影像訊號;以及步驟8050藉由該影像訊號判斷該待測物是否具有缺陷。上述各步驟並不依步驟的數字大小而有順序的關係。Furthermore, as shown in FIG. 8, a detection method using the above apparatus includes the following steps: step 8010 applies a driving voltage to the object to be tested; step 8020, grounds the electro-optical modulation device; and step 8030 projects the beam to the electro-optic beam. The modulating device; the step 8040 captures the image signal of the electro-optic modulating device; and the step 8050 determines whether the object to be tested has a defect by using the image signal. The above steps are not in a sequential relationship depending on the numerical size of the steps.

使用感光耦合元件(CCD)攝影機所拍攝的結果:(一)若未加電壓時,粗略灰階值為25;(二)若有加電壓,但無設置反射鏡時,透明導電膜(ITO)區的粗略灰階值為50,蝕刻區的粗略灰階值為35,黑白對比約為15;(三)若有加電壓,且設置反射鏡時,透明導電膜區的粗略灰階值為80,蝕刻區的粗略灰階值為40,黑白對比約為40,有設置反射鏡較無設置反射鏡的黑白對比增加2.5倍,故可驗證本揭露的無可預期之功效。Results taken with a photocoupler (CCD) camera: (1) If no voltage is applied, the coarse grayscale value is 25; (2) If there is voltage applied, but no mirror is provided, the transparent conductive film (ITO) The coarse grayscale value of the region is 50, the rough grayscale value of the etched region is 35, and the black and white contrast is about 15; (3) if a voltage is applied and the mirror is set, the coarse grayscale value of the transparent conductive film region is 80. The rough grayscale value of the etched area is 40, the black-and-white contrast is about 40, and the black-and-white contrast of the set mirror is less than 2.5 times that of the no-arranged mirror, so the unpredictable effect of the disclosure can be verified.

此外,如圖9所示為另一種檢測方法之實施例,包含下列步驟:步驟9010,量測並計算,無施加電壓下,該待測物的一平均亮度值;步驟9020施加驅動電壓於該待測物;步驟9030將該電光調變裝置接地;步驟9040投射該光束於該電光調變裝置;步驟9050擷取該電光調變裝置之該影像訊號;以及步驟9060藉由該影像訊號判斷該待測物是否具有缺陷。其中步驟9060進一步如圖10所示包含步驟9061根據該平均亮度值設定一預設閥值範圍、步驟9062根據該預設閥值範圍篩選該影像訊號之複數個像素、步驟9063比對該待測物之圖案與該些篩選像素,及步驟9064分析該待測物中有缺陷的各該些像素,上述各步驟並不依步驟的數字大小而有順序的關係。In addition, as shown in FIG. 9, another embodiment of the detecting method includes the following steps: Step 9010, measuring and calculating an average brightness value of the object to be tested without applying voltage; and applying a driving voltage to the step 9020. Step 9030: grounding the electro-optical modulation device; step 9040, projecting the beam to the electro-optic modulation device; step 9050, capturing the image signal of the electro-optic modulation device; and step 9060, determining the image signal by the image signal Whether the object to be tested has defects. Step 9060 further includes, as shown in FIG. 10, step 9061, setting a preset threshold range according to the average brightness value, and step 9062, filtering a plurality of pixels of the image signal according to the preset threshold range, and step 9063 is to be tested. The pattern of the object and the screening pixels, and step 9064 analyze each of the pixels in the object to be tested, and the steps are not in a sequential relationship according to the numerical size of the steps.

以上述檢測方法為例,每次量測前,在無施加電壓下,預先量測並計算該待測物的平均亮度值(如25單位),接著如圖8所示之實施例進行量測,施加電壓後,可依據該待測物的不同並根據該平均亮度值設定預設閥值範圍(如40至45單位),由於該待測物之圖案通常具有許多不同的檢測區域(如導電膜區與蝕刻區),不同的檢測區域具有不同的亮度值,因此某些區域(如蝕刻區(平均亮度值40單位))可能與具有缺陷的區域一起被視為具有缺陷。因此該預設閥值範圍所篩選出的複數個像素有部分確實具有缺陷,而另一部分則為正常。為了區分具有缺陷的各該些像素,本發明可利用已知的該待測物之圖案與被篩選出的像素進行比對並分析在該待測物中哪些像素確實具有缺陷。Taking the above detection method as an example, before each measurement, the average brightness value (for example, 25 units) of the object to be tested is measured and calculated without applying voltage, and then measured according to the embodiment shown in FIG. After the voltage is applied, a preset threshold range (eg, 40 to 45 units) may be set according to the difference of the object to be tested, and the pattern of the object to be tested usually has many different detection areas (eg, conductive). The film area and the etched area) have different brightness values, so some areas (such as etched areas (average brightness value of 40 units)) may be considered defective with the defective area. Therefore, the plurality of pixels selected by the preset threshold range have portions that are indeed defective, and the other portion is normal. In order to distinguish each of the pixels having defects, the present invention can use the known pattern of the object to be tested to compare with the selected pixels and analyze which pixels in the object to be tested do have defects.

本揭露之技術內容及技術特點已揭示如上,然而本揭露所屬技術領域中具有通常知識者應瞭解,在不背離後附申請專利範圍所界定之本揭露精神和範圍內,本揭露之教示及揭示可作種種之替換及修飾。例如,上文揭示之許多裝置或結構或方法步驟可以不同之方法實施或以其他結構予以取代,或者採用上述二種方式之組合。The technical content and the technical features of the present disclosure have been disclosed as above, but those skilled in the art should understand that the teachings and disclosures of the present disclosure are disclosed without departing from the spirit and scope of the disclosure as defined by the appended claims. Can be used for various substitutions and modifications. For example, many of the devices or structures or method steps disclosed above may be implemented in different ways or substituted with other structures, or a combination of the two.

本案之權利範圍並不侷限於上文揭示之特定實施例的製程、機台、製造、物質之成份、裝置、方法或步驟。本揭露所屬技術領域中具有通常知識者應瞭解,基於本揭露教示及揭示製程、機台、製造、物質之成份、裝置、方法或步驟,無論現在已存在或日後開發者,其與本案實施例揭示者係以實質相同的方式執行實質相同的功能,而達到實質相同的結果,亦可使用於本揭露。因此,以下之申請專利範圍係用以涵蓋用以此類製程、機台、製造、物質之成份、裝置、方法或步驟。The scope of the present invention is not limited to the process, machine, manufacture, compositions, means, methods, or steps of the particular embodiments disclosed. It should be understood by those of ordinary skill in the art that, based on the teachings of the present disclosure, the process, the machine, the manufacture, the composition of the material, the device, the method, or the steps, whether present or future developers, The revealer performs substantially the same function in substantially the same manner, and achieves substantially the same result, and can also be used in the present disclosure. Accordingly, the scope of the following claims is intended to cover such <RTIgt; </ RTI> processes, machines, manufactures, compositions, devices, methods or steps.

100...電光檢測器100. . . Electro-optic detector

10...調變器10. . . Modulator

10-1...支撐架10-1. . . Support frame

10-2...調變器本體10-2. . . Modulator body

10-3...鏡面10-3. . . Mirror

12...分光鏡12. . . Beam splitter

14...光源14. . . light source

16...透鏡16. . . lens

17...CCD攝影機17. . . CCD camera

18...影像處理器18. . . Image processor

20...顯示器20. . . monitor

22...待測物twenty two. . . Analyte

30...電光調變裝置30. . . Electro-optical modulation device

30'...電光調變裝置30'. . . Electro-optical modulation device

31...本體31. . . Ontology

32...第一表面32. . . First surface

33...第二表面33. . . Second surface

34...導電膜34. . . Conductive film

34'...導電膜34'. . . Conductive film

35...透明保護膜35. . . Transparent protective film

36...透光基板36. . . Light transmissive substrate

40...電光檢測器40. . . Electro-optic detector

40'...電光檢測器40'. . . Electro-optic detector

40"...電光檢測器40"...electro-optic detector

40'''...電光檢測器40'''. . . Electro-optic detector

410...分光鏡410. . . Beam splitter

420...光源產生裝置420. . . Light source generating device

430...電光調變裝置430. . . Electro-optical modulation device

430'...電光調變裝置430'. . . Electro-optical modulation device

431...本體431. . . Ontology

4311...第一表面4311. . . First surface

4312...第二表面4312. . . Second surface

432...導電膜432. . . Conductive film

433...透明保護膜433. . . Transparent protective film

440...支撐模組440. . . Support module

440'...支撐模組440'. . . Support module

441...透明基板441. . . Transparent substrate

442...反射鏡442. . . Reflector

450...取像模組450. . . Image capture module

460...電源模組460. . . Power module

490...待測物490. . . Analyte

491...透明導電膜圖案491. . . Transparent conductive film pattern

圖1顯示為習知電光檢測器的示意圖;Figure 1 shows a schematic view of a conventional electro-optical detector;

圖2顯示根據本揭露一實施例之電光調變裝置之剖面示意圖;2 is a cross-sectional view showing an electro-optic modulation device according to an embodiment of the present disclosure;

圖3顯示根據本揭露另一實施例之電光調變裝置之剖面示意圖;3 is a cross-sectional view showing an electro-optic modulation device according to another embodiment of the present disclosure;

圖4顯示根據本揭露一實施例之電光檢測器之示意圖;4 shows a schematic diagram of an electro-optic detector according to an embodiment of the present disclosure;

圖5顯示根據本揭露另一實施例之電光檢測器之示意圖;FIG. 5 is a schematic diagram showing an electro-optical detector according to another embodiment of the present disclosure; FIG.

圖6顯示根據本揭露又一實施例之電光檢測器之示意圖;6 shows a schematic diagram of an electro-optic detector according to still another embodiment of the present disclosure;

圖7顯示根據本揭露再一實施例之電光檢測器之示意圖;及FIG. 7 is a schematic diagram showing an electro-optic detector according to still another embodiment of the present disclosure; and

圖8顯示根據本揭露一實施例之電光檢測器檢測方法之流程圖;FIG. 8 is a flow chart showing a method for detecting an electro-optical detector according to an embodiment of the present disclosure;

圖9顯示根據本揭露另一實施例之電光檢測器檢測方法之流程圖;及FIG. 9 is a flow chart showing a method for detecting an electro-optical detector according to another embodiment of the present disclosure; and

圖10顯示根據本揭露另一實施例之電光檢測器檢測方法之部分流程圖。FIG. 10 shows a partial flow chart of an electro-optical detector detection method according to another embodiment of the present disclosure.

40...電光檢測器40. . . Electro-optic detector

410...分光鏡410. . . Beam splitter

420...光源產生裝置420. . . Light source generating device

430...電光調變裝置430. . . Electro-optical modulation device

431...本體431. . . Ontology

4311...第一表面4311. . . First surface

4312...第二表面4312. . . Second surface

432...導電膜432. . . Conductive film

433...透明保護膜433. . . Transparent protective film

440...支撐模組440. . . Support module

441...透明基板441. . . Transparent substrate

442...反射鏡442. . . Reflector

450...取像模組450. . . Image capture module

460...電源模組460. . . Power module

490...待測物490. . . Analyte

491...透明導電膜圖案491. . . Transparent conductive film pattern

Claims (12)

一種電光檢測器,包含:一光源產生裝置,發射一光束;一電光調變裝置,調變該光束後該光束入射一待測物;一支撐模組,支撐該待測物並使調變後的該光束穿透該待測物並入射該支撐模組,其中該支撐模組另包含一反射鏡,該反射鏡設置於該支撐模組並反射入射於該支撐模組之該光束;以及一取像模組,轉變該電光調變裝置所反射的該光束而成一影像訊號。 An electro-optical detector comprises: a light source generating device for emitting a light beam; an electro-optic modulation device, wherein the light beam is incident on a test object after the beam is modulated; a support module supports the object to be tested and is modulated The light beam penetrates the object to be tested and is incident on the support module, wherein the support module further includes a mirror disposed on the support module and reflecting the light beam incident on the support module; The image capturing module converts the light beam reflected by the electro-optical modulation device into an image signal. 根據請求項1所述之電光檢測器,其中該電光調變裝置包含一本體、一導電膜以及一透明保護膜,其中該本體含有一第一表面及一第二表面,該導電膜設置於該第一表面,該透明保護膜設置於該第二表面並位於該待測物之上。 The electro-optic detector according to claim 1, wherein the electro-optical modulation device comprises a body, a conductive film and a transparent protective film, wherein the body comprises a first surface and a second surface, the conductive film is disposed on the The first surface, the transparent protective film is disposed on the second surface and located above the object to be tested. 根據請求項2所述之電光檢測器,其中該本體為一高分子散佈型液晶顯示器(PDLC顯示器)。 The electro-optical detector according to claim 2, wherein the body is a polymer-dispersed liquid crystal display (PDLC display). 根據請求項2所述之電光檢測器,其中該本體為一光學晶體,該光學晶體之材質選自磷酸二氫鉀、磷酸二氘鉀及磷酸二氫銨組成之群。 The electro-optical detector according to claim 2, wherein the body is an optical crystal, and the material of the optical crystal is selected from the group consisting of potassium dihydrogen phosphate, potassium dipotassium phosphate and ammonium dihydrogen phosphate. 根據請求項2所述之電光檢測器,另包含一電源模組,該電源模組分別電性連接該導電膜及該待測物。 The electro-optical detector according to claim 2, further comprising a power module, wherein the power module is electrically connected to the conductive film and the object to be tested. 根據請求項2所述之電光檢測器,其中該電光調變裝置另包含一透光基板,該透光基板設置於該導電膜上,該透光 基板之面積大於該本體,且該導電膜設置於超出該本體之外的該透光基板上。 The electro-optic detector according to claim 2, wherein the electro-optic modulation device further comprises a transparent substrate, the transparent substrate is disposed on the conductive film, and the transparent The area of the substrate is larger than the body, and the conductive film is disposed on the transparent substrate beyond the body. 根據請求項1所述之電光檢測器,其中該取像模組選自一感光耦合元件(CCD)攝影機及一互補式金屬氧化物半導體攝影機。 The electro-optical detector of claim 1, wherein the image capturing module is selected from the group consisting of a photosensitive coupling element (CCD) camera and a complementary metal oxide semiconductor camera. 根據請求項2所述之電光檢測器,其中該透明保護膜之材質選自金屬、有機物、無機物及陶瓷。 The electro-optical detector according to claim 2, wherein the material of the transparent protective film is selected from the group consisting of metals, organic substances, inorganic substances, and ceramics. 一種利用請求項1之電光檢測器之檢測方法,包含下列步驟:施加驅動電壓於該待測物;將該電光調變裝置接地;投射該光束於該電光調變裝置;擷取該電光調變裝置之該影像訊號;以及藉由該影像訊號判斷該待測物是否具有缺陷。 A method for detecting an electro-optic detector using the claim 1, comprising the steps of: applying a driving voltage to the object to be tested; grounding the electro-optical modulation device; projecting the beam to the electro-optic modulation device; and extracting the electro-optic modulation The image signal of the device; and determining whether the object to be tested has a defect by the image signal. 根據請求項9所述之檢測方法,另包含量測並計算,無施加電壓下,該待測物的一平均亮度值。 According to the detection method of claim 9, the method further comprises measuring and calculating an average brightness value of the object to be tested without applying voltage. 根據請求項10所述之檢測方法,其中判斷該待測物缺陷步驟中進一步包含根據該平均亮度值設定一預設閥值範圍,並根據該預設閥值範圍篩選該影像訊號之複數個像素。 The detecting method according to claim 10, wherein the determining the defect of the object to be tested further comprises setting a preset threshold range according to the average brightness value, and filtering a plurality of pixels of the image signal according to the preset threshold value range. . 根據請求項11所述之檢測方法,其中判斷該待測物缺陷步驟中另包含比對該待測物之圖案與篩選該影像訊號之該些 像素並分析該待測物中有缺陷的各該些像素。According to the detection method of claim 11, wherein the step of determining the defect of the object to be tested further comprises: comparing the pattern of the object to be tested with the pixels of the image signal and analyzing the defects in the object to be tested. Some pixels.
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