CN1265232C - Circuit pattern detecting device and circuit pattern detecting method - Google Patents
Circuit pattern detecting device and circuit pattern detecting method Download PDFInfo
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- CN1265232C CN1265232C CNB018040187A CN01804018A CN1265232C CN 1265232 C CN1265232 C CN 1265232C CN B018040187 A CNB018040187 A CN B018040187A CN 01804018 A CN01804018 A CN 01804018A CN 1265232 C CN1265232 C CN 1265232C
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- electrooptic element
- crystal layer
- voltage
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133502—Antiglare, refractive index matching layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0311—Structural association of optical elements, e.g. lenses, polarizers, phase plates, with the crystal
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Tests Of Electronic Circuits (AREA)
- Measurement Of Current Or Voltage (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
A transparent conductive layer is formed under a glass substrate. A reflection preventing layer and a reflecting layer are formed on the respective surfaces of an electro-optic crystal layer. The reflection preventing layer of the electro-optic liquid crystal layer is attached to the surface (lower surface) of the transparent conductive layer by use of an adhesive layer. In this manner, the reflection preventing layer 14 is provided between the adhesive layer 13 and the electro-optic crystal layer 15.
Description
Technical field
The present invention relates to the circuit pattern detecting device and the circuit pattern detecting method of the circuitous pattern (pattern) of optical check circuit substrate.
Background technology
Be formed at the existing method of the broken string, short circuit etc. of the circuitous pattern on the circuit substrate as inspection, useful spring probe forms unit clamp, and the pad that makes anchor clamps gather the contact circuit figure carries out the method for electric checking.In the method, when the circuitous pattern that the pad number of checking in recent years increases, need the spring probe of a plurality of costlinesses, the cost of unit clamp raises.In addition,, be difficult to guarantee physically and the contact of pad, also exist because of contacting the pad damage problem that sharp spring probe causes because of the densification of pad.
In addition,, have from a pad, be connected to the situation of a plurality of pads circuitous pattern branch for circuit substrate.Under such situation, there is the problem of the supervision time lengthening of broken string, short circuit.
And, with regard to circuit substrate, a plurality of circuitous patterns are formed on which floor, but in the method that makes the spring probe contact pad, can not check broken string, the short circuit of the circuitous pattern of this Mulitilayer circuit board.
From such background, expect to have the method for the voltage distribution of optical detection circuitous pattern.As the example in the past of using electric optical effect to come the voltage of measuring circuit figure to distribute, the electronic unit that has (Japan) spy to open to disclose in the flat 9-72947 communique be welded to connect detection method and pick-up unit.This method use electrooptics sensor detects the electric field intensity of ad-hoc location non-contactly, thus the state that is welded to connect of check circuit substrate.But, in the method, can only detect the electric field of the fore-end of electrooptics sensor, when the voltage of asking circuitous pattern integral body distributes, the electrooptics sensor is scanned.
On the other hand, open to have disclosed in the flat 5-256794 communique (Japan) spy and check the disconnection defect such as pixel electrode, grid wiring, source wiring of liquid crystal display substrate and the device of circuit defect non-contactly by the voltage Determination of distribution.Here, near the electrooptic element that is disposed at the circuit substrate, the voltage of testing circuit figure distributes two-dimensionally from its reflected light with parallel light beam irradiates.
But the birefraction height of electrooptic element is so because of surface reflection and backside reflection generation interference stripes, obviously worsen the image of the voltage distribution of obtaining according to reflected light.
In addition, voltage is applied to circuit substrate 4 on the time, oriented surface direction diffusion charge in electrooptic element, the tendency that voltage distribute to be worsened.Promptly, in the time of on the circuitous pattern that voltage is applied to circuit substrate, there is the direct current resistance component that has because of reflection horizon that the voltage of the circuitous pattern of circuit substrate is distributed to expand to the problem on the electrooptic element to direct current resistance component, the particularly electrooptic element of surface direction.
Summary of the invention
The object of the present invention is to provide a kind of circuit pattern detecting device and circuit pattern detecting method, can optics be to detect the voltage that is formed on the circuitous pattern on the circuit substrate accurately to distribute the short circuit/broken string of check circuit figure.
Electrooptic element of the present invention comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer; And
Be arranged on the anti-reflection layer between described electrooptics crystal layer and the described transparent electrode layer.
Circuit pattern detecting device of the present invention comprises:
Near the electrooptic element of the described structure that the circuit substrate that has formed circuitous pattern, is provided with;
The electric field generation circuit that will the electric field corresponding offers described electrooptics crystal layer with circuitous pattern; And
The detecting device of the catoptrical intensity distributions of the described electrooptic element that plane of polarization changes is provided according to the birefraction that changes with the electric field that provides.
Electrooptic element of the present invention comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer;
Be arranged on the bond layer between described electrooptics crystal layer and the described transparent electrode layer;
Be arranged on the 1st anti-reflection layer between described electrooptics crystal layer and the described bond layer: and
Be arranged on the 2nd anti-reflection layer between described transparent electrode layer and the described bond layer.
Circuit pattern detecting device of the present invention comprises:
Near the electrooptic element of the described structure that the circuit substrate that has formed circuitous pattern, is provided with:
The electric field generation circuit that will the electric field corresponding offers described electrooptics crystal layer with circuitous pattern: and
The detecting device of the catoptrical intensity distributions of the described electrooptic element that plane of polarization changes is provided according to the birefraction that changes with the electric field that provides.
Circuit pattern detecting method of the present invention is:
Light shine on the electrooptic element, this electrooptic element comprises: the electrooptics crystal layer is set near the circuit substrate that has formed the circuitous pattern that will check; Transparent electrode layer is set at the light incident side of described electrooptics crystal layer; And anti-reflection layer, be set between described electrooptics crystal layer and the described transparent electrode layer;
Between described circuit substrate and electrooptics crystal layer, apply voltage, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
Detection detects the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer from the reflected light of described electrooptic element.
Circuit pattern detecting method of the present invention is:
Light shine on the electrooptic element, this electrooptic element comprises: the electrooptics crystal layer is set near the circuit substrate that has formed the circuitous pattern that will check; Transparent electrode layer is set at the light incident side of described electrooptics crystal layer; Bond layer is set up between described electrooptics crystal layer and the described transparent electrode layer; The 1st anti-reflection layer is set between described electrooptics crystal layer and the described bond layer; And the 2nd anti-reflection layer, be set between described transparent electrode layer and the described bond layer;
Between described circuit substrate and electrooptics crystal layer, apply voltage, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
Detection detects the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer from the reflected light of described electrooptic element.
Circuit pattern detecting device of the present invention comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies periodic zero-sum voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrical equipment;
Light source is to described electrooptic element irradiates light; And
Detecting device detects the catoptrical intensity distributions of described electrooptic element.
Circuit pattern detecting device of the present invention comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrical equipment;
Light source is to described electrooptic element irradiates light; And
Detecting device and applies the catoptrical intensity distributions that described voltage synchronously detects electrooptic element.
Circuit pattern detecting method of the present invention is:
Light shine be set at formed the circuitous pattern that will check circuit substrate near electrooptic element on,
Between described circuit substrate and electrooptics crystal layer, apply alternating voltage, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
When the amplitude of alternating voltage is maximum, detect reflected light from described electrooptic element, detect the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer.
Circuit pattern detecting method of the present invention is:
Light shine be set at formed the circuitous pattern that will check circuit substrate near electrooptic element on,
Between described circuit substrate and electrooptics crystal layer, apply pulse voltage, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
When the rising of pulse voltage, detect reflected light from described electrooptic element, detect the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer.
Circuit pattern detecting device of the present invention comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrical equipment;
Light source is to described electrooptic element irradiates light; And
Detecting device detects the catoptrical intensity distributions of described electrooptic element; And
Control part, control is from the rayed of described light source or to the light incident of detecting device, making irradiates light or incident light is pulsed light.
Circuit pattern detecting method of the present invention is:
Apply alternating voltage being set between near the circuit substrate that has formed the circuitous pattern that will check electrooptic element and the described circuit substrate, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
Periodically link with described alternating voltage, pulsed light shone on the described electrooptic element,
Detection detects the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer from the reflected light of described electrooptic element.
Circuit pattern detecting method of the present invention is:
Apply alternating voltage being set between near the circuit substrate that has formed the circuitous pattern that will check electrooptic element and the described circuit substrate, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
Light shine on the described electrooptic element,
Periodically link with described alternating voltage and to detect reflected light, detect the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer from described electrooptic element.
Description of drawings
Fig. 1 is the sectional view of structure of the electrooptic element of expression the present invention the 1st embodiment;
Fig. 2 is the sectional view of structure of the electrooptic element of expression the present invention the 2nd embodiment;
Fig. 3 is the structural representation of the circuit pattern detecting device of expression the present invention the 3rd embodiment;
Fig. 4 A, Fig. 4 B, Fig. 4 C are the figure of the inspection principle of explanation the 3rd embodiment;
Fig. 5 is the structural representation of the circuit pattern detecting device of expression the present invention the 4th embodiment;
Fig. 6 is the equivalent circuit diagram of the electrooptic element of the 4th embodiment;
Fig. 7 is the scatter diagram to surface direction of expression electric charge when being applied to step voltage on the electrooptic element of the 4th embodiment;
To be expression be applied to condition diagram on the electrooptic element of the 4th embodiment with alternating voltage for Fig. 8 A, Fig. 8 B;
Fig. 9 is the process flow diagram of the checking process of expression the 4th embodiment;
Figure 10 is the structural representation of the variation of expression the 4th embodiment;
To be expression be applied to condition diagram on the electrooptic element of the 5th embodiment with positive negative pulse stuffing voltage for Figure 11 A, Figure 11 B;
To be expression be applied to condition diagram on the electrooptic element of the 6th embodiment with step voltage for Figure 12 A, Figure 12 B;
To be expression be applied to condition diagram on the electrooptic element of the 7th embodiment with a pulse voltage for Figure 13 A, Figure 13 B;
To be expression be applied to condition diagram on the electrooptic element of the 8th embodiment with a plurality of pulse voltages for Figure 14 A, Figure 14 B;
Figure 15 is the structural representation of the circuit pattern detecting device of expression the present invention the 9th embodiment;
Figure 16 is the figure of the voltage light intensity characteristic of expression the 9th embodiment;
Figure 17 A, Figure 17 B, Figure 17 C, Figure 17 D, Figure 17 E are the figure of working condition of the circuit pattern detecting device of expression the present invention the 10th embodiment;
Figure 18 is the synoptic diagram of variation of the circuit pattern detecting device of expression the present invention the 10th embodiment;
Figure 19 A, Figure 19 B, Figure 19 C, Figure 19 D, Figure 19 E are the figure of working condition of the circuit pattern detecting device of expression the present invention the 11st embodiment;
Figure 20 is the synoptic diagram of the circuit pattern detecting device of expression the present invention the 12nd embodiment: and
Figure 21 A, Figure 21 B are the figure of the inspection example of expression the 12nd embodiment.
Preferred forms
Below, with reference to accompanying drawing embodiments of the invention are described.
Fig. 1 is a sectional view of schematically representing the electrooptic element 10 of the 1st embodiment.Form transparency conducting layer 12 11 times at glass substrate.On two surfaces of electrooptics crystal layer 15, form anti-reflection layer 14 and reflection horizon 16 in addition.Go up anti-reflection layer 14 by the bonding electrooptics crystal layer 15 by above-mentioned other formation of bond layer 13 on the surface of transparency conducting layer 12 (downside).That is, between bond layer 13 and electrooptics crystal layer 15, anti-reflection layer 14 is set.
As electrooptics crystal layer 15, for example for Pockel's effect (Pockel ' s effect) crystal etc.Utilizing light to detect under the situation of electric field by the Pockel's effect crystal, the transverse electric field detection that the electric field perpendicular to light direction is had sensitivity is being arranged, and the vertical electric field detection that the electric field that is parallel to light direction is had sensitivity.In order correctly to detect the corresponding Electric Field Distribution of voltage distribution that produces with circuit substrate, use vertical electric field to detect.Have the Pockel's effect crystal that the vertical electric field of sensitivity detects as carrying out electric field to the direct of travel that is parallel to light, Bi is arranged
12SiO
20(BSO, bismuth oxide silicon), GaAs (gallium arsenide), LiNbO
3-55 degree are cut apart, ZnSe, KDP (KH
2PO
4, potassium hydrogen phosphate), KTP (KTiOPO
4, titanium phosphate potassium) etc.KDP, KTP have hygroscopy, and the value of the electrooptics coefficient of ZnSe, GaAs etc. is low.Therefore, expectation use birefraction high but do not have hygroscopy, in cube crystalline substance, have isotropic character, BSO crystal that the electrooptics coefficient ratio is bigger.For example, preferably, form electrooptics crystal layer 15 with the BSO crystal about thickness grinding 1～30mm of 100～500 μ m.If the BSO crystal is lower than 100 μ m, then potential difference (PD) diminishes, so the detection sensitivity of electric field diminishes.And if above 500 μ m, then electric field enlarges to surface direction, be not easy to detect voltage and distribute.
Have again, the electrooptics crystal layer 15 that is used for electrooptic element 10 that uses as present embodiment is not limited to above-mentioned electrooptics crystal layer, as long as can change the electrooptics crystal layer of birefraction by electric field just passable, can use above-mentioned any electrooptics crystal layer, also can use above-mentioned unaccounted electrooptics crystal layer.
Optical grinding is carried out on the two sides of electrooptics crystal layer 15, and aberration is preferably about (1/4) λ (λ is a wavelength) in the surface.Under the situation as the pick-up unit of circuit substrate described later, the thin place of electrooptics crystal layer 15 electric field between the circuitous pattern of circuit substrate and transparency conducting layer 12 does not enlarge, and becomes the Electric Field Distribution that the voltage near original circuitous pattern distributes.Therefore, in order to detect the Electric Field Distribution near the voltage distribution shape of circuitous pattern, electrooptics crystal layer 15 is preferably thinner.But, if electrooptics crystal layer 15 is thin, have at the circuitous pattern with circuit substrate under the situation of certain intervals noncontact electrooptic element 10, in the capacitor structure between circuitous pattern and transparency conducting layer 12, the potential difference (PD) that is applied on the electrooptics crystal layer 15 diminishes.Therefore, the detection sensitivity of electric field diminishes, but also unmanageable problem is arranged.The thickness of electrooptics crystal layer 15 becomes the key that these principal elements are coordinated mutually, in the present embodiment, and the electrooptics crystal layer 15 of used thickness 100 μ m～500 μ m.
The laser beam that incides electrooptic element 10 (seeing through glass substrate 11) is subjected to the phase modulation (PM) that electric field produces, by the bottom reflection of electrooptics crystal layer 15.Electrooptics crystal layer 15 majorities are birefraction height, and then reflectivity is also high.At LiNbO
3Situation under, refractive index is 2.2, reflectivity is about 14% under this situation.Therefore, electrooptics crystal layer 15 is carried out optical grinding, also can detect the reflected light of bottom surface, but, in the present embodiment, reflection horizon 16 is formed on the bottom surface of electrooptics crystal layer 15 in order further to improve reflectivity.Multilayer dielectric reflection horizon is used in reflection horizon 16, as material, MaF is arranged
2-TiO
2, SiO
2-TiO
2Deng.
So, because electrooptics crystal layer 15 is thin and damaged easily, so be bonded on the glass substrate 11 that has formed transparency conducting layer 12 by bond layer 13.If bond layer 13 uses the big material of cure shrinkage, then, electrooptics crystal layer 15 produces stress because approaching, particularly under the situation of some crystal of bismuth oxide silicon piezoelectricity such as (BSO), the uneven danger of optical characteristics is arranged.Therefore, with regard to bond layer 13, use the little materials of cure shrinkage such as epoxy system.
Other embodiment of the present invention below are described.In the explanation of other embodiment, the part identical with the 1st embodiment is attached with identical reference number, and omits its detailed explanation.
Fig. 2 is the sectional view that schematically illustrates the electrooptic element 20 of the 2nd embodiment.The 2nd embodiment also is provided with anti-reflection layer 17 between transparency conducting layer 12 and the bond layer 13 in the 1st embodiment.Thus, can suppress the reflectivity of the lower surface (with the face of glass substrate 11 opposition sides) of transparency conducting layer 12, synthetically improve the picture quality of electrooptic element 20.
The refractive index of transparency conducting layer 12 is 1.90, and epoxy is that the refractive index of the bond layer 13 under the situation is about 1.48, so produce reflection on both borders, produces multipath reflection in transparency conducting layer 12.Even transparency conducting layer 12, also with the 1st embodiment in the upper surface of the electrooptics crystal layer 15 that illustrates and the reflection of lower surface produce multipath reflection in the same manner, may produce interference stripes.Therefore, form the anti-reflection layer 17 of having considered the refringence between transparency conducting layer 12 and the bond layer 13.
According to the 2nd embodiment, between electrooptics crystal layer 15 and bond layer 13, also form anti-reflection layer 17, so laser radiation is arrived under the situation of electrooptic element 20, can suppress the multipath reflection in electrooptics crystal layer 15 and the transparency conducting layer 12, Electric Field Distribution can be detected as preferable image.
As the 3rd embodiment, the some electrooptic elements 10 that used the 1st, the 2nd embodiment or 20 circuit pattern detecting device are described below with reference to Fig. 3.Light from LASER Light Source 30 incides electrooptic element 10 or 20 by optical system mechanism 32.Below electrooptic element 10 or 20, configuration has formed the circuit substrate 34 of circuitous pattern 33.Optical system mechanism 32 is made of optical beam expander 36, polarization spectroscope 38 and optical lens 40.
Light source also can use halogen light source, higher source luminance (メ Ha ラ イ De) etc. except LASER Light Source 30.
The laser that shines electrooptic element 10 or 20 from LASER Light Source 30 is become the laser beam of two dimension by optical beam expander 36.Laser beam carries out polarization by polarization spectroscope 38, shines electrooptic element 10 or 20.
Change plane of polarization to the incident light of electrooptic element 10 or 20 because of the variation of this birefraction.Polarization angle is by the electrooptics tensor of electrooptics crystal layer 15 and the electric field intensity direction decision that produces.Therefore, laser beam distributes according to the voltage of circuitous pattern 33 and changes polarization state.
The laser beam that incides electrooptic element 10 or 20 is radiated in the bottom surface of electrooptics crystal layer 15, incides polarization reflective mirror 38, has the light intensity corresponding with Electric Field Distribution along horizontal direction laser light reflected light beam among the figure and distributes.
Have the laser beam that the light intensity corresponding with Electric Field Distribution distributes by optical lens 40 optically focused, by detecting, the voltage distribution of circuitous pattern can be distributed as the light intensity of two dimension and detect with optical detection device 42.As optical detection device 42, can use CCD etc.By being distributed, the detected voltages of optical detection device 42 resolve, handle (detected Electric Field Distribution intensity and benchmark are distributed compare judgement), defectives such as the broken string of circuitous pattern 33 that can check circuit substrate 34 and short circuit by resolver 42.
This pick-up unit uses the electrooptic element 10 or 20 that is provided with anti-reflection layer 14,17, even so on light source, use the high LASER Light Source 30 of coherence, also can prevent the interference stripes that the multipath reflection of electrooptics crystal layer 15 causes, Electric Field Distribution between transparency conducting layer 12 and the circuitous pattern 33 can be detected as preferable image (hereinafter referred to as the electric field intensity map picture), accurately defectives such as the broken string of the circuitous pattern 33 of check circuit substrate 34 and short circuit.
Have again,, the repeated detection result is carried out summation averaging, then can improve S/N if carry out repeated detection.
And with reference to Fig. 9 also as described later, the difference of the testing result in the time of can also obtaining with non-rayed suppresses the scattered light component.
Be shown in Fig. 4 A～4C from electric field intensity map as the broken string of check circuit substrate and the principle of short circuit.In Fig. 4 A, for the circuitous pattern of observing from above 33, configuration electrooptic element 10 or 20.The good pairing electric field intensity map of circuitous pattern of electrical specification as 46 shown in Fig. 4 B, verily the reproducing circuit figure 33, and the bad pairing electric field intensity map of circuitous pattern of electrical specification as 46 shown in Fig. 4 C, comprise 48A of short circuit portion and disconnection portion 48B, with the electric field intensity map of good circuitous pattern as 46 audit by comparison in, can detect 48A of short circuit portion and disconnection portion 48B.Have again, as circuit substrate, even except the form that also can adopt (detection) at the inside and the back side of substrate circuitous pattern to be arranged is being arranged on the surface of substrate the form of circuitous pattern.
According to the 3rd embodiment, the electrooptic element that use is provided with anti-reflection layer comes the pick-up unit of the circuitous pattern of forming circuit substrate, so the influence that suppresses to disturb with the non-contact method of having used electric optical effect also detects the intensity distributions of the electric field that the circuitous pattern by highly integrated circuit substrate produces accurately, can carry out electric checking.Only above circuit substrate, dispose electrooptic element, electric-field intensity distribution that just can the testing circuit figure.Therefore, by comparing, judge the electric-field intensity distribution of detected electric-field intensity distribution and non-defective unit, can carry out electric checking at short notice with simple position determination system.
In recent years, highly integrated because of circuit substrate is difficult to make spring probe to contact, and the outward appearance by the check circuit figure replaces the situation of electric checking in the majority.But, damage that can not the testing circuit figure in visual examination etc.According to the 3rd embodiment, suppress interference stripes, the electric-field intensity distribution between electrooptics crystal and the circuitous pattern is formed good electric field intensity map look like to come the voltage of testing circuit figure to distribute, so can also detect in visual examination defective such as non-detectable damage.
Fig. 5 represents the pick-up unit of the 4th embodiment.The 32A of optical system mechanism is provided with the polarization spectroscope 38 that spectroscope 38A replaces the 3rd embodiment, between optical beam expander 36 and spectroscope 38A polariscope 52 is set, and be provided with the inspection light microscopic 54 replace optical lens 40.Connect signal source 56 in the circuitous pattern 33 of circuit substrate 34, circuitous pattern 33 is applied voltage according to the timing corresponding with control signal from control device 58.Control device 58 also provides control signal to LASER Light Source 30, optical detection device 42, resolver 44, and the irradiation timing of control light, detection timing, parsing are regularly.Polarization spectroscope 38 equivalences of polariscope 52, spectroscope 38A, inspection light microscopic 54 and the 3rd embodiment.
The electrooptic element 60 of present embodiment can use the element 10,20 of the 1st, the 2nd embodiment, also can use the common components that does not have anti-reflection layer.Fig. 5 represents to use the latter's situation.Electrooptic element 60 has transparency conducting layer 62, electrooptics crystal layer 64, dielectric reflection horizon 66 at least.
Light source can also use halogen light source, higher source luminance etc. except LASER Light Source 30.The laser that incides electrooptic element 60 from LASER Light Source 30 is become the laser beam of two dimension by spectroscope 36.Laser beam carries out polarization by polariscope 52, incides electrooptic element 60.
The laser beam that incides electrooptic element 60 by the variation of the birefraction in the electrooptics crystal layer 64, changes polarization state by 66 reflections of dielectric reflection horizon.The polarization angle of this moment is by the electrooptics tensor of electrooptics crystal 64 and the electric field intensity direction decision that produces.At this moment, laser beam distributes according to the voltage of circuitous pattern 33 and changes polarization state.
The laser beam that has changed from the plane of polarization of electrooptic element 60 emission is incided spectroscope 38A, and wherein the laser beam of vertical branch incides inspection light microscopic 54.Have and the voltage of the circuitous pattern 33 corresponding light intensity distributions that distributes from inspection light microscopic 54 emission laser beam.As inspection light microscopic 54, can use polarization plates etc.By detecting these laser beams with optical detection device 42, the light intensity distributions that the voltage of circuitous pattern 33 can be distributed as two dimension detects.Resolve, handle by resolver 44 as required by the detected voltages of optical detection device 44 are distributed, defectives such as broken string that can check circuit figure 33 and short circuit.
Form the effect of distributed constant circuit in the internal electric characteristic of electrooptic element 60, but in equivalent electrical circuit, can not ignore the reactive component (capacitive sensing component) of in-plane and the adpedance component (direct current resistance component) of vertical direction, so its equivalent electrical circuit as shown in Figure 6.
Capacitive component because of the electrooptics crystal layer 64 of formation between reflection horizon 66 and the ITO layer 62 has low frequency and passes through characteristic on surface direction.Therefore, from signal source 56 when circuitous pattern 33 applies step voltage, as shown in Figure 7, from circuitous pattern 33 capacitive component C by air layer
AirNear circuitous pattern 33 capacitive component C
1Apply voltage V
1, the capacitive component C that separates to surface direction successively
2, C
3..., C
nApply voltage V
2, V
3... V
nSo if circuitous pattern 33 is applied DC voltage, then optical detection device 42 extended detection because of voltage distributes is so can not distribute by testing circuit.
Therefore, from the equivalent electrical circuit of Fig. 6 as can be known,, then can suppress the diffusion of electric charge, can high resolving power ground detect the voltage that is applied on the circuitous pattern 33 and distribute to surface direction if circuitous pattern 33 is applied alternating voltage.
In the present embodiment, shown in Fig. 8 A, alternating voltage is applied on the circuitous pattern 33 from signal source 56.Shown in Fig. 8 B, synchronous when being maximum with the absolute value of alternating voltage, by control device 58 controls regularly, the reflected light that optical detection device 42 detects from electrooptic element 60.When the absolute value of alternating voltage was big, the intensity that detected voltage distributes was also big.Therefore, alternating voltage as shown in figure 11 is applied on the circuitous pattern 33, by the detection of reflected light synchronously when maximum with the amplitude of the alternating voltage shown in Figure 11 B, the distributed constant ground that can highly sensitive, not influence the surface direction of electrooptic element 60 detects voltage and distributes.
And, shown in Fig. 8 B, detect the data of a plurality of light intensity distributions synchronously with alternating voltage, so they are carried out summation averaging, can improve the S/N ratio by resolver 44, voltage can be distributed and detect as light intensity distributions.
Below, the process flow diagram that uses pick-up unit shown in Figure 5 to implement the electric checking of circuit substrate according to the electric field intensity map picture is shown in Fig. 9.
In step S10, control device 58 sends indication to signal source, and circuitous pattern 33 is applied alternating voltage.Detected by optical detection device 42 by the corresponding electric field intensity map picture of the Electric Field Distribution shape with circuitous pattern 33 that applies the voltage generation.
In step S12, control device 58 sends the image detection indication to optical detection device 42, and optical detection device 42 detects the electric field intensity map picture.
In step S14, control device 58 sends image to optical detection device 42 and transmits indication, and optical detection device 42 looks like to be sent to resolver 44 with detected electric field intensity map.Usually, optical detection device 42 detects the signal (scattered light component) by the extinction ratio generation of polariscope 52, inspection light microscopic 54, so obtain and the difference that does not comprise the image that has only scattered light scattered light component of electric field picture content, suppresses the scattered light component.
Therefore, in step S16, control device 58 sends indication to signal source 56, stops circuitous pattern 33 is applied alternating voltage, detects the scattered light component.
In step S18, control device 58 sends the image detection indication to optical detection device 42, and optical detection device 42 detects scattered light image.
In step S20, control device 58 sends image to optical detection device 42 and transmits indication, and optical detection device 42 is sent to resolver 44 with detected scattered light image.
In step S22, from the detected electric field intensity map picture of step S12, deduct detected scattered light image among the step S18 and only obtain the electric field intensity map picture, with the audit by comparison of the pairing electric field intensity map picture of good circuitous pattern that will obtain in advance in, implement the electric checking of circuitous pattern.
Have, the voltage that is used to produce electric field is not limited to be applied to circuitous pattern 33, as shown in figure 10, also can be applied on the transparency conducting layer 62 of electrooptic element 60 again.That is, signal source 56 is free of attachment to circuit substrate 34 (circuitous pattern 33), also can carries out same inspection and be connected on the electrooptic element 60 (transparency electrode 62).Thus, having can be with the contact advantage of coming the circuitous pattern of testing circuit substrate simply such as short bar.
Pick-up unit according to present embodiment, according to the method for having used electric optical effect, the deterioration that can suppress the spatial resolution that causes along the distributed constant circuit characteristic that the surface direction of electrooptic element forms comes the voltage of the circuitous pattern of testing circuit substrate to distribute.Distribute by resolving this voltage, can in the electric checking of the broken string/short circuit of highly integrated circuit substrate, effectively detect.
According to the pick-up unit of present embodiment, only on the circuitous pattern of circuit substrate, dispose electrooptic element, the Electric Field Distribution that the voltage of circuitous pattern can be distributed as two dimension detects.By will this detected Electric Field Distribution and the electric-field intensity distribution of the circuitous pattern of non-defective unit compare, judge, can carry out electric checking with fast, the simple position determination system of detection speed.
In the pick-up unit of present embodiment, by the circuitous pattern to circuit substrate apply periodic zero-sum voltage, for example alternating voltage detects, when voltage is applied on the circuitous pattern of circuit substrate, direct current resistance component to surface direction, particularly the voltage of the circuitous pattern of the circuit substrate that produces of the direct current resistance component that has because of the reflection horizon of electrooptic element distributes and does not diffuse into electrooptic element, can the spatial resolution highland detects voltage and distributes.In the past, the direct current resistance component that has because of the dielectric reflection horizon, do not notice the situation that electric charge makes voltage distribute and worsen along the surface direction diffusion, in the present embodiment, apply periodic zero-sum voltage, for example alternating voltage by circuitous pattern, improve the spatial resolution that voltage distributes circuit substrate.Periodic zero-sum voltage is the voltage that makes the magnitude of voltage of cycle integrated be zero, do not have DC component, is not limited to alternating voltage, also can periodically apply positive negative pulse stuffing voltage.
Figure 11 A, 11B are the figure of the summary of expression the 5th embodiment that applies the periodic zero-sum voltage that pulse voltage produces.
The positive negative pulse stuffing voltage of equal amplitudes that will be shown in Figure 11 A from signal source 56 is applied on the circuitous pattern 33.With applying regularly synchronously of pulse voltage shown in Figure 11 B, control device 58 controls regularly, the reflected light that optical detection device 42 detects from electrooptic element 60.Thus, also can the resolution height, improve S/N and recently detect voltage and distribute.
In the 4th, the 5th embodiment, explanation is by applying periodic zero-sum voltage, suppress the diffusion of electric charge to surface direction, then, by applying the voltage of moment waveform, by the DC component of this voltage, detect Electric Field Distribution in the transition period that did not lose efficacy, thereby suppress the diffusion of electric charge to surface direction.
In the 6th embodiment, the step voltage shown in Figure 12 A is applied on the circuitous pattern 33 from signal source 56.With applying regularly synchronously of step voltage shown in Figure 12 B, control device 58 controls regularly, the reflected light that optical detection device 42 detects from electrooptic element 60.Thus, the influence that not produced by the electric charge diffusion in the electrooptic element 60, the voltage that can detect as light intensity distributions to high resolving power distributes.
In the 7th embodiment, the pulse voltage shown in Figure 13 A is applied on the circuitous pattern 33 from signal source 56.With applying regularly synchronously of step voltage shown in Figure 13 B, control device 58 controls regularly, the reflected light that optical detection device 42 detects from electrooptic element 60.Thus, the influence that not produced by the electric charge diffusion in the electrooptic element 60, the voltage that can detect as light intensity distributions to high resolving power distributes.
In the 8th embodiment, the pulse voltage shown in Figure 14 A is applied on the circuitous pattern 33 from signal source 56.With applying regularly synchronously of as shown in Figure 14B step voltage, control device 58 controls regularly, the reflected light that optical detection device 42 detects from electrooptic element 60.At this moment, with do not apply Figure 14 A voltage during T
OffBe set at the sufficient time that electric charge that the capacitive component of electrooptic element 60 produces discharges.Thus, the influence that not produced by the electric charge diffusion in the electrooptic element 60, the voltage that can detect as light intensity distributions to high resolving power distributes.Here, synchronous with the pulse voltage that applies continuously, carry out summation averaging by the data of 44 pairs of optical detection device 42 detected a plurality of light intensity distributions of resolver, can the voltage distribution be detected as light intensity distributions the S/N highland.
According to the 6th～the 8th embodiment,, detect the voltage distribution so can be distributed in the surface of electrooptic element direction diffusion front space resolution highland at the voltage of circuitous pattern at instantaneous ground detection of reflected light when circuitous pattern applies voltage.
Figure 15 is the synoptic diagram of the circuit pattern detecting device of the 9th embodiment.The 9th embodiment is in the 1st～the 8th embodiment, and (1/8) wavelength plate 70 is set between polariscope 52 and spectroscope 38A, between spectroscope 38A and inspection light microscopic 54 (1/8) wavelength plate 72 is set.Under the situation that (1/8) wavelength plate 72 is not set, (1/4) wavelength plate also can be set replace (1/8) wavelength plate.Thus, can have maximum (1/4) wavelength phase differential at incident light with penetrating on the polarization surface to electrooptic element 60.Therefore, when voltage was applied on the circuitous pattern 33, the relation that applies between voltage and the light intensity became characteristic 16B from the characteristic 16A of Figure 16, highly sensitive when applying voltage.
Shown in Fig. 8 A, alternating voltage is applied on the circuitous pattern 33, by control device 58 controls regularly synchronous shown in Fig. 8 B with the timing that applies positive voltage and negative voltage, detect light intensity distributions by optical detection device 42.The difference of the light intensity distributions when resolver 44 applies positive voltage, negative voltage by acquisition detects as light intensity distributions but sensitivity and resolution highland distribute voltage.
Below, the 10th embodiment is described.The schematic construction of device is identical with the 4th embodiment shown in Figure 5.
As problem so far, the dielectric reflection horizon is not desirable dielectric, in fact has high resistance value, and this dielectric becomes the reason of the resolution deterioration of the voltage distribution that makes circuitous pattern.Because of the resistive component in dielectric reflection horizon, when being applied to DC voltage on the circuitous pattern, electric charge spreads to surface direction, and the spatial resolution that voltage is distributed descends.In order to address this problem, in the 4th embodiment, apply alternating voltage.
The intensity variation that electric optical effect produces has nonlinear characteristic, is applying under voltage and the intensity variation situation with respect to the polar-symmetric of voltage, and near the sensitivity the 0V descends.But, shown in the 9th embodiment, if to the incident light of electrooptic element 60 with penetrate on the polarization surface and have phase differential, then apply between voltage and the light intensity relation as shown in figure 16, become asymmetric.Therefore, near the sensitivity the 0V improves, but when applying alternating voltage, also brightens respectively or deepening with respect to the variation of the light intensity of generating positive and negative voltage.Therefore, under situation about detecting with two-dimensional photodetector such as CCD, the light intensity in the sense cycle changes by average, and sensitivity descends.
Therefore, in the 10th embodiment, by irradiating pulsed light, detect its reflected light, apply the light intensity variation that changes in the alternating voltage thereby only detect in pulsed light is between the light period, the voltage of testing circuit figure distributes in high sensitivity.
Below with reference to Figure 17 A～Figure 17 E the working condition of the 10th embodiment is described.
Pulsed light is by 66 reflections of dielectric reflection horizon, and reflected light is detected by optical detection device 42.Reflected light is overlapping because of applying the intensity variation component that electric field that alternating voltage produces causes, and the intensity of reflected light that optical detection device 42 detects is shown in Figure 17 D.The light intensity that optical detection device 42 detects be at optical detection device 42 detection signal (Figure 17 B) in connecting during (ON), be between detection period in the value of accumulative total intensity of reflected light gained.If from catoptrical testing result, deduct the value suitable, then shown in Figure 17 E, can extract intensity variation component (electric field intensity map picture) based on electric field with irradiates light.Thus, in the light intensity distributions of the two dimension that optical detection device 42 detects, detect the intensity variation based on electric field in the part of the electric field that exists circuitous pattern to produce, the voltage that can obtain circuitous pattern distributes.
In the present embodiment, in order to eliminate the scattered light component, also can be in the hope of not applying the intensity of reflected light under the voltage condition, ask and the difference of the intensity of reflected light when applying voltage.
Below with reference to Figure 19 A～Figure 19 G the 11st embodiment is described.
Pulsed light is by 66 reflections of dielectric reflection horizon, and reflected light is detected by optical detection device 42.Reflected light is overlapping because of applying the intensity variation component that electric field that alternating voltage produces causes, and the intensity of reflected light that optical detection device 42 detects is shown in Figure 19 D.The light intensity that optical detection device 42 detects be at optical detection device 42 detection signal (Figure 19 B) in connecting during (ON), be between detection period in the value of accumulative total intensity of reflected light gained.If from catoptrical testing result, deduct the value suitable, then shown in Figure 19 G, can extract intensity variation component (electric field intensity map picture) based on electric field with irradiates light.
Then, control device 58 control light sources 30, with during the alternating voltage shown in Figure 19 E negative synchronously, pulsed light is shone electrooptic element 60.
Pulsed light is by 66 reflections of dielectric reflection horizon, and reflected light is detected by optical detection device 42.Reflected light is overlapping because of applying the intensity variation component that electric field that alternating voltage produces causes, and the intensity of reflected light that optical detection device 42 detects is shown in Figure 19 F.The light intensity that optical detection device 42 detects be at optical detection device 42 detection signal (Figure 19 B) in connecting during (ON), be between detection period in the value of accumulative total intensity of reflected light gained.If from catoptrical testing result, deduct the value suitable, then shown in Figure 19 G, can extract intensity variation component (electric field intensity map picture) based on electric field with irradiates light.
According to the pick-up unit of the 10th, the 11st embodiment, according to the method for having used electric optical effect, suppress influence by the dielectric reflectance coating diffusion charge of electrooptic element, voltage that can spatial resolution highland testing circuit figure distributes.Distribute by resolving this voltage, can realize the electric checking of the broken string/short circuit of highly integrated circuit substrate.
Having, using electric optical effect to come in the method that the voltage of instrumentation two dimension distributes, as the reason that the spatial resolution that voltage is distributed worsens, is the electric field that produces from circuitous pattern along with to the thickness direction infiltration of electrooptics crystal and enlarge again.But, dielectric reflectance coating as reflection part is not desirable dielectric, has high resistance value, so existence because of the problem that this resistive component worsens the resolution of voltage distribution, does not also address this problem and detect with the photodetector of two dimension the method for voltage distribution so far.
In the method for the invention, detect, thereby improve such characteristic, can detect the voltage distribution in the spatial resolution highland by circuitous pattern is applied alternating voltage.
The intensity variation that electric optical effect produces is a characteristic of nonlinear.In Figure 15, the polarization surface that incident is injected to the electrooptics crystal is carried out phase compensation, but applying under the situation that the voltage sign of not carrying out phase compensation and intensity variation form symmetry characteristic (the characteristic 16A of Figure 16), because near the sensitivity the OV obviously reduces, form asymmetric so phase compensation is carried out in expectation.
But in the photodetector of two dimension, in the CCD of general frequent use, sample frequency is 30Hz, if apply than being the high alternating voltage of Qwest's frequency, then the intensity variation that increases and decreases in the sample frequency offsets, the situation that has sensitivity to worsen.
In the 10th, the 11st embodiment, with the positive and negative irradiating pulsed light synchronously respectively of alternating voltage, so only detect the situation that makes the light intensity increase and decrease because of electric field.Thus, can apply, improve electric field space resolution than being the much higher alternating voltage of Qwest's frequency.
In addition, can make the detection of alternating voltage and photodetector regularly asynchronous, form simple apparatus structure.By obtaining the difference that voltage distributes, the part of the voltage of testing circuit figure existence in high sensitivity.
Figure 20 represents the summary of the pick-up unit of the 12nd embodiment.Present embodiment is made of voltage supply device 110, contact probe 112, circuit substrate 114, voltage check device 116, decision maker 118, electrooptics probe (EO probe) 120, light source 122, optical system mechanism 124, optical detection device 126, control device 128.
At first,, voltage is applied on the regulation pad 130 of wide pitch side of circuit substrate 114 by contact probe 112 from voltage supply device 110.At this moment, detect the voltage of other pads of wide pitch side, by the electric state (short circuit) of the circuitous pattern 132 of decision maker 118 check circuit substrates 114 by voltage check device 116.
Then, near the pad group 134 of narrow pitch side, electrooptics probe 120 is loaded at interval in accordance with regulations.At this moment, electrooptics probe 120 can contact with the pad 134 of narrow pitch side or near the circuitous pattern 132 the pad, also can not contact by the interval about 20 μ m.And, carry out polarization from the light of light source 122 by optical system mechanism 124, shine electrooptics probe 120.
If leniently the pad 130 of pitch side applies voltage, then do not have under the situation of broken string, by the electric field of electrooptics probe 120 detections from the pad 134 of narrow pitch side at circuitous pattern 132.At this moment, change polarization state from the reflected light of electrooptics probe 120 by electric field from the pad 134 of narrow pitch side.Polarized component by electric field change is modulated to light intensity by optical system mechanism 124 and changes, and is detected by optical detection device 126, judges light intensities by decision maker 118, thus electric state (broken string) that can the check circuit figure.
Control above-mentioned this a succession of operation by control device 128.
Figure 21 A, Figure 21 B represent inspection one example of present embodiment.This inspection is electric state (short circuit/broken string) inspection of carrying out on dielectric film 132 forming the BGA band (ball grid array (ballgrid array)) of pad 134 and circuitous pattern 136.Electrooptics probe 120 is loaded in the leading section of the circuitous pattern 136 of BGA band, apply voltage from pad 134 after, electrooptics probe 120 is moved, can carry out the inspection of the electric state (short circuit/broken string) of circuitous pattern 136 simultaneously.
Here,, can use the electrooptic element that comprises anti-reflection layer shown in Figure 2, also can as the 4th embodiment～the 11st embodiment, apply voltage, irradiating pulsed light as electrooptics probe 120.
The invention is not restricted to the foregoing description.Also can use liquid crystal to replace constituting the electrooptics crystal of electrooptic element.In addition, as irradiates light, be not limited to laser, non-laser is also passable.The foregoing description is not limited to independent enforcement, also can appropriate combination implement.
Utilize possibility on the industry
According to such as above-mentioned the present invention, can provide to detect accurately on the optics to be formed on circuit The voltage of the circuitous pattern on the substrate distributes, the circuit diagram of the short circuit of check circuit figure/broken string Shape checkout gear, and the electrooptic element that is used for this device.
Claims (25)
1. circuit pattern detecting device, it comprises:
Be formed with near the electrooptic element that is provided with the circuit substrate of circuitous pattern, this electrooptic element has the electrooptics crystal layer, be arranged on described electrooptics crystal layer light incident side transparent electrode layer and be arranged on anti-reflection layer between described electrooptics crystal layer and the described transparent electrode layer;
Electric field generation circuit applies voltage to described circuitous pattern, so that the electric field corresponding with circuitous pattern offered described electrooptics crystal layer;
And detecting device, this detecting device detects the catoptrical intensity distributions of the described electrooptic element that plane of polarization changes along with the variation of birefraction, and described birefraction changes along with the electric field that is provided;
Described electric field generation circuit also comprises described electrooptic element ground connection, alternating voltage is applied to signal source on the described circuitous pattern.
2. circuit pattern detecting device, it comprises:
Near being formed with the circuit substrate of circuitous pattern, electrooptic element is set, described electrooptic element has the electrooptics crystal layer, be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer, be arranged on bond layer between described electrooptics crystal layer and the described transparent electrode layer, be arranged on the 1st anti-reflection layer between described electrooptics crystal layer and the described bond layer and be arranged on described transparent electrode layer and described bond layer between the 2nd anti-reflection layer;
Electric field generation circuit applies voltage to described circuitous pattern, so that the electric field corresponding with circuitous pattern offered described electrooptics crystal layer; And
Detecting device, this detecting device detects the catoptrical intensity distributions of the described electrooptic element that plane of polarization changes along with the variation of birefraction, and described birefraction changes along with the electric field that is provided;
Described electric field generation circuit also comprises described electrooptic element ground connection, and alternating voltage is applied to signal source on the described circuitous pattern.
3. circuit pattern detecting device comprises:
Electrooptic element is set near the circuit substrate that is formed with circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit periodically applies zero-sum voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrooptic element;
Light source is to described electrooptic element irradiates light; And
Detecting device detects the catoptrical intensity distributions of described electrooptic element,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
4. circuit pattern detecting device as claimed in claim 3, wherein, described voltage applying circuit applies alternating voltage,
Described detecting device detected intensity when the amplitude of alternating voltage is maximum distributes.
5. circuit pattern detecting device as claimed in claim 3, wherein, described detecting device carries out the summation averaging computing with testing result repeatedly.
6. circuit pattern detecting device as claimed in claim 3, wherein, described voltage applying circuit applies positive negative pulse stuffing voltage,
Described detecting device detected intensity when applying pulse voltage distributes.
7. circuit pattern detecting device as claimed in claim 3, wherein, described detecting device comprises resolver, catoptrical intensity distributions when this resolver calculates light incided described electrooptic element and the difference between the catoptrical intensity distributions during incident light are not come the check circuit figure according to difference.
8. circuit pattern detecting device as claimed in claim 3, wherein, described voltage applying circuit comprises described electrooptic element ground connection, alternating voltage is applied to signal source on the described circuitous pattern.
9. circuit pattern detecting device as claimed in claim 3, wherein, described voltage applying circuit comprises described circuitous pattern ground connection, alternating voltage is applied to signal source on the described electrooptic element.
10. circuit pattern detecting device as claimed in claim 3, wherein, described electrooptic element comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer; And
Be arranged on the anti-reflection layer between described electrooptics crystal layer and the described transparent electrode layer.
11. circuit pattern detecting device as claimed in claim 3, wherein, described electrooptic element comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer;
Be arranged on the bond layer between described electrooptics crystal layer and the described transparent electrode layer;
Be arranged on the 1st anti-reflection layer between described electrooptics crystal layer and the described bond layer; And
Be arranged on the 2nd anti-reflection layer between described transparent electrode layer and the described bond layer.
12. circuit pattern detecting device as claimed in claim 3 wherein, also comprises:
Be arranged on the spectroscope between described light source and the described electrooptic element;
Be arranged on 1/8 wavelength plate between described spectroscope and the described light source; And
Be arranged on 1/8 wavelength plate between described spectroscope and the described detecting device.
13. a circuit pattern detecting device comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrooptic element;
Light source is to described electrooptic element irradiates light;
And detecting device, and apply the catoptrical intensity distributions that described voltage synchronously detects electrooptic element;
Described voltage applying circuit comprises described electrooptic element ground connection, alternating voltage is applied to signal source on the described circuitous pattern,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
14. a circuit pattern detecting device comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrooptic element;
Light source is to described electrooptic element irradiates light;
And detecting device, and apply the catoptrical intensity distributions that described voltage synchronously detects electrooptic element;
Described voltage applying circuit comprises described circuitous pattern ground connection, alternating voltage is applied to signal source on the described electrooptic element,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
15. a circuit pattern detecting method, light shine be set at formed the circuitous pattern that will check circuit substrate near electrooptic element on,
Between the electrooptics crystal layer of described circuit substrate and described electrooptic element, apply alternating voltage, produce electric field, the birefraction of described electrooptics crystal layer is changed according to circuitous pattern by this electric field,
When the amplitude of alternating voltage is maximum, detect reflected light from described electrooptic element, detect the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
16. a circuit pattern detecting device comprises:
Electrooptic element is set near the circuit substrate that has formed circuitous pattern, changes plane of polarization according to the birefraction with electric field change;
Voltage applying circuit applies voltage between circuitous pattern and described electrooptic element, so that the electric field corresponding with circuitous pattern offered described electrooptic element;
Light source is to described electrooptic element irradiates light; And
Detecting device detects the catoptrical intensity distributions of described electrooptic element; And
Control part, control be from the rayed of described light source or to the light incident of detecting device, with irradiates light or incident light as pulsed light,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
17. circuit pattern detecting device as claimed in claim 16, wherein, described voltage applying circuit applies alternating voltage,
Described control part and alternating voltage be positive during synchronously from described light source irradiation pulsed light.
18. circuit pattern detecting device as claimed in claim 16, wherein, described detecting device carries out the summation averaging computing with the repeated detection result.
19. circuit pattern detecting device as claimed in claim 16, wherein, described detecting device comprises resolver, catoptrical intensity distributions when this resolver calculates light incided described electrooptic element and the difference between the catoptrical intensity distributions during incident light are not come the check circuit figure according to difference.
20. circuit pattern detecting device as claimed in claim 16, wherein, described voltage applying circuit comprises described electrooptic element ground connection, alternating voltage is applied to signal source on the described circuitous pattern.
21. circuit pattern detecting device as claimed in claim 16, wherein, described voltage applying circuit comprises described circuitous pattern ground connection, alternating voltage is applied to signal source on the described electrooptic element.
22. circuit pattern detecting device as claimed in claim 16, wherein, described electrooptic element comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer; And
Be arranged on the anti-reflection layer between described electrooptics crystal layer and the described transparent electrode layer.
23. circuit pattern detecting device as claimed in claim 16, wherein, described electrooptic element comprises:
The electrooptics crystal layer;
Be arranged on the transparent electrode layer of the light incident side of described electrooptics crystal layer;
Be arranged on the bond layer between described electrooptics crystal layer and the described transparent electrode layer;
Be arranged on the 1st anti-reflection layer between described electrooptics crystal layer and the described bond layer; And
Be arranged on the 2nd anti-reflection layer between described transparent electrode layer and the described bond layer.
24. circuit pattern detecting method, apply alternating voltage being set between near the circuit substrate that is formed with the circuitous pattern that to check electrooptic element and the described circuit substrate, produce electric field, by this electric field the birefraction of the electrooptics crystal layer of described electrooptic element is changed according to circuitous pattern
Pulsed light was shone on the described electrooptic element according to the described alternating voltage cycle,
Detection is from the reflected light of described electrooptic element, detects the voltage distribution pattern between the electrooptics crystal layer of described circuit substrate and described electrooptic element,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
25. circuit pattern detecting method, apply alternating voltage being set between near the circuit substrate that is formed with the circuitous pattern that to check electrooptic element and the described circuit substrate, produce electric field, by this electric field the birefraction of the electrooptics crystal layer of described electrooptic element is changed according to circuitous pattern
Light shine on the described electrooptic element,
According to the reflected light of described alternating voltage cycle detection from described electrooptic element, detect the voltage distribution pattern between described circuit substrate and the electrooptics crystal layer,
Described electrooptic element comprises transparency conducting layer, electrooptics crystal layer, dielectric reflection horizon at least.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP366788/00 | 2000-12-01 | ||
| JP366788/2000 | 2000-12-01 | ||
| JP2000366788 | 2000-12-01 | ||
| JP2001313771 | 2001-10-11 | ||
| JP313771/2001 | 2001-10-11 | ||
| JP313771/01 | 2001-10-11 |
Publications (2)
| Publication Number | Publication Date |
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| CN1395697A CN1395697A (en) | 2003-02-05 |
| CN1265232C true CN1265232C (en) | 2006-07-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB018040187A Expired - Fee Related CN1265232C (en) | 2000-12-01 | 2001-11-30 | Circuit pattern detecting device and circuit pattern detecting method |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100826505B1 (en) |
| CN (1) | CN1265232C (en) |
| TW (1) | TWI269878B (en) |
| WO (1) | WO2002044799A1 (en) |
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-
2001
- 2001-11-30 KR KR1020027009927A patent/KR100826505B1/en not_active IP Right Cessation
- 2001-11-30 WO PCT/JP2001/010478 patent/WO2002044799A1/en active Application Filing
- 2001-11-30 TW TW090129745A patent/TWI269878B/en not_active IP Right Cessation
- 2001-11-30 CN CNB018040187A patent/CN1265232C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI801243B (en) * | 2021-05-21 | 2023-05-01 | 日商日立全球先端科技股份有限公司 | Sample inspection device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1395697A (en) | 2003-02-05 |
| KR100826505B1 (en) | 2008-05-02 |
| WO2002044799A1 (en) | 2002-06-06 |
| KR20030009349A (en) | 2003-01-29 |
| TWI269878B (en) | 2007-01-01 |
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