TWI466541B - 光感測器及固態攝影裝置 - Google Patents
光感測器及固態攝影裝置 Download PDFInfo
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- TWI466541B TWI466541B TW095129174A TW95129174A TWI466541B TW I466541 B TWI466541 B TW I466541B TW 095129174 A TW095129174 A TW 095129174A TW 95129174 A TW95129174 A TW 95129174A TW I466541 B TWI466541 B TW I466541B
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- Prior art keywords
- transistor
- storage
- photodiode
- floating region
- storage capacitor
- Prior art date
Links
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- 101100123718 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pda-1 gene Proteins 0.000 description 16
- 230000008859 change Effects 0.000 description 12
- 229910052732 germanium Inorganic materials 0.000 description 11
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- 229920005591 polysilicon Polymers 0.000 description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- 238000000079 presaturation Methods 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 3
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005029614A JP4497366B2 (ja) | 2005-02-04 | 2005-02-04 | 光センサおよび固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200810540A TW200810540A (en) | 2008-02-16 |
| TWI466541B true TWI466541B (zh) | 2014-12-21 |
Family
ID=36980223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095129174A TWI466541B (zh) | 2005-02-04 | 2006-08-09 | 光感測器及固態攝影裝置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4497366B2 (enExample) |
| TW (1) | TWI466541B (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4745677B2 (ja) * | 2005-02-10 | 2011-08-10 | キヤノン株式会社 | 撮像装置 |
| JP4695902B2 (ja) * | 2005-03-18 | 2011-06-08 | キヤノン株式会社 | 固体撮像装置の製造方法 |
| JP4459099B2 (ja) | 2005-03-18 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| JP4802688B2 (ja) * | 2005-12-06 | 2011-10-26 | コニカミノルタホールディングス株式会社 | 撮像素子および撮像装置 |
| WO2007083704A1 (ja) | 2006-01-18 | 2007-07-26 | National University Corporation Shizuoka University | 固体撮像装置及びその画素信号の読みだし方法 |
| EP2942813B1 (en) * | 2006-08-09 | 2020-09-30 | Tohoku University | Optical sensor and solid-state imaging device |
| US8184191B2 (en) | 2006-08-09 | 2012-05-22 | Tohoku University | Optical sensor and solid-state imaging device |
| CN101507263B (zh) | 2006-08-25 | 2011-04-20 | 京瓷株式会社 | 灵敏度修正方法和摄像装置 |
| JP2008258885A (ja) | 2007-04-04 | 2008-10-23 | Texas Instr Japan Ltd | 撮像装置および撮像装置の駆動方法 |
| JP4480753B2 (ja) | 2007-11-21 | 2010-06-16 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
| CN102017150B (zh) * | 2008-05-02 | 2016-08-03 | 佳能株式会社 | 固态成像装置 |
| JP5219724B2 (ja) | 2008-10-09 | 2013-06-26 | キヤノン株式会社 | 固体撮像装置 |
| JP5355026B2 (ja) * | 2008-10-09 | 2013-11-27 | キヤノン株式会社 | 撮像装置 |
| JP5267867B2 (ja) | 2009-03-06 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 撮像装置 |
| JP4835710B2 (ja) * | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
| JP5521682B2 (ja) | 2010-02-26 | 2014-06-18 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器 |
| JP5671830B2 (ja) * | 2010-03-31 | 2015-02-18 | ソニー株式会社 | 固体撮像素子、固体撮像素子の製造方法、および電子機器 |
| US20130113768A1 (en) * | 2010-07-27 | 2013-05-09 | Sharp Kabushiki Kaisha | Display device and drive method for same |
| JP5810493B2 (ja) * | 2010-09-03 | 2015-11-11 | ソニー株式会社 | 半導体集積回路、電子機器、固体撮像装置、撮像装置 |
| JP5213969B2 (ja) * | 2011-01-07 | 2013-06-19 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| JP5348176B2 (ja) * | 2011-05-16 | 2013-11-20 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
| JP5278491B2 (ja) * | 2011-05-16 | 2013-09-04 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び電子機器 |
| JP5555336B2 (ja) * | 2013-01-28 | 2014-07-23 | キヤノン株式会社 | 固体撮像装置 |
| US9496304B2 (en) | 2013-08-15 | 2016-11-15 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
| US9054007B2 (en) * | 2013-08-15 | 2015-06-09 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
| JP5623607B2 (ja) * | 2013-08-30 | 2014-11-12 | キヤノン株式会社 | 撮像装置及び撮像システム |
| JP2015103958A (ja) | 2013-11-25 | 2015-06-04 | ルネサスエレクトロニクス株式会社 | 撮像装置 |
| US10341592B2 (en) | 2015-06-09 | 2019-07-02 | Sony Semiconductor Solutions Corporation | Imaging element, driving method, and electronic device |
| TWI701819B (zh) * | 2015-06-09 | 2020-08-11 | 日商索尼半導體解決方案公司 | 攝像元件、驅動方法及電子機器 |
| TWI738569B (zh) | 2015-07-07 | 2021-09-01 | 日商半導體能源研究所股份有限公司 | 成像裝置及其運作方法 |
| KR102660456B1 (ko) | 2015-09-10 | 2024-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법 |
| JP6701710B2 (ja) * | 2015-12-14 | 2020-05-27 | 株式会社ニコン | 撮像素子および撮像装置 |
| KR102515664B1 (ko) | 2016-03-08 | 2023-03-29 | 삼성전자주식회사 | Led 플리커 완화 기능을 가지는 이미지 센서 및 상기 이미지 센서를 포함하는 이미지 처리 시스템 |
| JP2017183563A (ja) | 2016-03-31 | 2017-10-05 | ソニー株式会社 | 撮像装置、駆動方法、および、電子機器 |
| WO2018140012A1 (en) * | 2017-01-25 | 2018-08-02 | BAE Systems Imaging Solutions Inc. | Imaging array with extended dynamic range |
| JP7121468B2 (ja) * | 2017-02-24 | 2022-08-18 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
| US10939046B2 (en) | 2017-11-30 | 2021-03-02 | BAE Systems Imaging Solutions Inc. | LED flicker mitigation for motion pictures |
| CN109920808B (zh) * | 2017-12-13 | 2024-05-14 | 松下知识产权经营株式会社 | 摄像装置 |
| CN110278396B (zh) * | 2018-03-16 | 2024-07-12 | 松下知识产权经营株式会社 | 摄像装置 |
| US11089210B2 (en) * | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
| KR102615195B1 (ko) * | 2018-07-19 | 2023-12-18 | 삼성전자주식회사 | ToF 기반의 3D 이미지 센서 및 그 이미지 센서를 구비한 전자 장치 |
| WO2020144910A1 (ja) | 2019-01-08 | 2020-07-16 | パナソニックIpマネジメント株式会社 | 撮像装置 |
| JP7396806B2 (ja) * | 2019-03-29 | 2023-12-12 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP7535506B2 (ja) | 2019-05-31 | 2024-08-16 | ヌヴォトンテクノロジージャパン株式会社 | 固体撮像装置、及びそれを用いる撮像装置 |
| CN113892257B (zh) | 2019-05-31 | 2024-06-21 | 新唐科技日本株式会社 | 固体摄像装置、摄像装置以及摄像方法 |
| CN112769980B (zh) | 2019-11-06 | 2025-02-07 | 华为技术有限公司 | 一种电子设备 |
| WO2021097770A1 (en) * | 2019-11-21 | 2021-05-27 | Huawei Technologies Co., Ltd. | Imaging element, imaging sensor, camera system, and device comprising camera system |
| CN115088074B (zh) | 2020-02-20 | 2025-06-20 | 新唐科技日本株式会社 | 固体摄像装置以及摄像装置 |
| US11616088B2 (en) * | 2020-03-25 | 2023-03-28 | Omnivision Technologies, Inc. | Transistors having increased effective channel width |
| JP7006722B2 (ja) * | 2020-05-01 | 2022-01-24 | 株式会社ニコン | 撮像素子および撮像装置 |
| WO2021235101A1 (ja) * | 2020-05-20 | 2021-11-25 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| WO2022244328A1 (ja) * | 2021-05-17 | 2022-11-24 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
| JP7709851B2 (ja) * | 2021-05-25 | 2025-07-17 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW421962B (en) * | 1997-09-29 | 2001-02-11 | Canon Kk | Image sensing device using mos type image sensing elements |
| TW200303614A (en) * | 2001-11-13 | 2003-09-01 | Toshiba Corp | Solid photographing apparatus and camera module using the same |
| TW200501021A (en) * | 2002-08-30 | 2005-01-01 | Toshiba Matsushita Display Tec | Suppression of leakage current in image acquisition |
| WO2005008748A1 (en) * | 2003-07-10 | 2005-01-27 | Zhao Linxin | An image sensor with a vertical overflow drain and short micro-lens to silicon distance |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590556A (ja) * | 1990-05-11 | 1993-04-09 | Olympus Optical Co Ltd | 固体撮像素子 |
| JP3592106B2 (ja) * | 1998-11-27 | 2004-11-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| JP3558589B2 (ja) * | 2000-06-14 | 2004-08-25 | Necエレクトロニクス株式会社 | Mos型イメージセンサ及びその駆動方法 |
| JP3984814B2 (ja) * | 2001-10-29 | 2007-10-03 | キヤノン株式会社 | 撮像素子、その撮像素子を用いた放射線撮像装置及びそれを用いた放射線撮像システム |
-
2005
- 2005-02-04 JP JP2005029614A patent/JP4497366B2/ja not_active Expired - Lifetime
-
2006
- 2006-08-09 TW TW095129174A patent/TWI466541B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW421962B (en) * | 1997-09-29 | 2001-02-11 | Canon Kk | Image sensing device using mos type image sensing elements |
| TW200303614A (en) * | 2001-11-13 | 2003-09-01 | Toshiba Corp | Solid photographing apparatus and camera module using the same |
| TW200501021A (en) * | 2002-08-30 | 2005-01-01 | Toshiba Matsushita Display Tec | Suppression of leakage current in image acquisition |
| WO2005008748A1 (en) * | 2003-07-10 | 2005-01-27 | Zhao Linxin | An image sensor with a vertical overflow drain and short micro-lens to silicon distance |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200810540A (en) | 2008-02-16 |
| JP2006217410A (ja) | 2006-08-17 |
| JP4497366B2 (ja) | 2010-07-07 |
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