TW200810540A - Optical sensor and solid-state imaging device - Google Patents

Abstract

A solid-state imaging device includes a plurality of pixels stored in onedimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operatlon.

Description

200810540 IX. Description of the Invention: [Technical Field of the Invention] In particular, regarding CMOS or the above-described solid-state imaging, the present invention relates to a one-dimensional or two-dimensional solid-state imaging device for a photosensor and a solid-state imaging CCD sensor. , the method of operation of the device. [Prior Art] Devices such as CM〇S (Complementary Metal Oxide Semiconductor) image sensors and CCD (Charge Coupled Device) image sensors have been improved in their properties and are widely used in digital applications. Camera, camera phone, scanner, etc. However, image sensors still require further improvements in the nature of the steps, which are the extended (four) range. The range of image sensing used in the practice is maintained at a level of, for example, 3 to 4 digits (6 to 80 dB). Therefore, in order to compete with the dynamic range of the naked eye or silver halide film, 'we are placing It is desirable to implement a high quality image sensor having a dynamic range of at least 5 to a number of turns (9) screams to 120 dB). Techniques for enhancing the image quality of the above-mentioned image sensing, for example, to generate high S/N bb ^ S. Inoue # - IEEE Workshop on CCDs and Advanced Image Sensor 2001, pp·l6_19" (hereinafter referred to as non-patent literature) A technique for reducing noise is proposed by reading a noise signal occurring in a floating region of a photodiode adjacent to each pixel and adding an optical signal. The difference between them. However, even with this method, the range of achievable astigmatism is only at the order of 80 dB. Achieving a broader dynamic range is necessary. Further, for example, as shown in FIG. 1, the unexamined patent application publication (JP-A) No. 2003-134396 (hereinafter referred to as the patent document) discloses a technique for extending the dynamic range, which is By connecting a floating region having a small capacitor C1 on the high sensitivity and low luminance side and a floating region having a large capacitor C2 on the low sensitivity and high luminance side to the photodiode PD, and then outputting low luminance respectively Side output OUT1 and high brightness side output 〇UT2. Further, as shown in FIG. 2, the unexamined patent application publication (Jp_A) No. 2000-165754 (hereinafter referred to as Patent Document 2) discloses a technique for extending the dynamic range. Capacitor cs in the diffusion (FD) region produces a technique that exposes another extended dynamic range by using a number of cameras that have at least two different exposure time periods, including 2 Imaging of a short exposure time period on the degree side, and imaging with a long exposure time period corresponding to the low shell side. As shown in the figure, the Japanese Unexamined Patent Application Publication (JP-A) is called π=π^_ and is referred to as Patent Document 3), and Y. Muramatsu et al. is published in journal of Solid_State Circuits, VoL 38, Νο· 1 , ρρ· 1 : The literature of the extended dynamic range is disclosed in the literature. The technique is to provide a transistor switch between the hunting pole PD and the capacitor c, and the light switch τ to store the light signal charge. The light diode is in one and the private phase is in both C; and the switch is turned off in the second exposure period to store 5 photo charges in the second U phase on the photodiode on top of the stored charge. These documents are disclosed in !1': when the illumination provided exceeds its saturation value, the remaining charge will be discharged via the reset transistor R. Woif*, as shown in f4, 'Japanese Unexamined Patent Application Publication (hereinafter referred to as Patent Document 4)' discloses that it is allowed to satisfy high use of electricity as a photodiode PD by using a larger electric power than the conventional one. The technical method of brightness photography is slaughter. In addition, as shown in FIG. 5, the document The Joumal 〇f makeup 〇 f such as Infonnatlon and Television Engineers, v〇1 57, 2〇〇3 (hereinafter referred to as 3) is a technique for extending the dynamic range, the technique The signal is converted in a logarithmic manner by means of a logarithmic conversion circuit.斗,2, the patent documents 1, 2, 3, and the method proposed in Non-Patent Document 2, or the use of - or more non-light time period imaging method towel, in the camera and on the high-definition camera system Under different coffees. ^ Hair-Question: The quality of the moving image will be low between at least two camera recording times. Moreover, in the methods proposed in the above-mentioned Patent Documents 4 and 3, although a wide dynamic range can be achieved by the imaging of the high-brightness side of the 6 200810540, on the low-luminance side, the product will be Desirably, the low sensitivity and low S/N ratio are generated, so that the image sensor that reduces the shadow to the CM()S^ image sensor has been difficult to maintain only high sensitivity and maintain high sensitivity. High, than. The foregoing is not an image sensor arranged in a two-dimensional array, but is also applied to a linear _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Ancient 22, the purpose is to provide a solid-state imaging device capable of extending the dynamic range and simultaneously reducing the sensitivity of the I and the S/Ν ratio. The wide-range dynamic range of the light-receiving camera can be used to maintain high-sensitivity in low-brightness imaging by utilizing the sensation of the sensation of the ancient light-emitting photonic diodes, and by using the image to flow through the overflow gate The first field of the meta-domain is stored in a storage capacitor to achieve high-brightness-light-thin-°# domain detectors include: -Technology 5 receives first and generates photo-charge; an overflow gate, is connected to the section And transmitting the photocharge of the photodiode overflowing during the storage operation; and the two-element device component is stored in the light transmitted through the overflow gate during the storage operation, and the light sensing sensor further comprises a transmission transistor , 1 where the transmission electron crystal system will form a junction transistor = (3) ii light is compared with: the semi-conducting domain of the surface area, the material layer of the conductivity type of the sigh, the material is below,, ίΓ Medium ^ 7 200810540 (punch through) barrier. The storage capacitor element may include: a semiconducting system formed in the semiconductor sensor 2 in which the photosensor is formed, as a lower electrode, a container insulating film is formed in the surface layer of the surface layer; On the capacitor insulation film. The upper electrode forming the storage capacitor component may include: a substrate of a photo sensor; a capacitor formed therein and an upper portion, the system is mounted on the electrode of the order; The storage capacitor component may include: - a semiconducting layer formed in the inner wall of the trench, the trench system i as a lower electrode, in the semiconductor substrate; a capacitor insulating film formed on one of the upper portions of the photosensor On the electric thin wall, and each of the plurality of pixel blocks each having the above-mentioned light sensor device, each of which includes a pixel block. In this device, each of the individual elements comprises: a photonic element and a single floating area. a plurality of overflow gates connected to the photodiode and stored and generating photocharges; - photocharges of the polar bodies; - storage capacitor elements, two transmissions of overflow light, two body charges; and - channels of the transmission transistor The solid-state imaging device having the substrate and the substrate for transmitting the transistor, includes a plurality of ^^ to = fixed depth. The element can also include: “Reset Thunder Turn,,; ^ Mother—has the above-mentioned photo sensor. “Capacitor component and floating area. The floating domain is used to discharge the floating area from the storage capacitor element::= 200810540 In the floating area, or the voltage is; - Selecting the transistor: = The solid-state camera device can further include -, the container And a component for discharging (4) storing electricity to be connected to the storage device, the signal charge in the signal generator in the floating dynamic region is used as a voltage; and the storage capacitor is used to amplify the transistor for selecting Russell. ^Select the private Japanese body, which is connected to the mouth of the murmur camera, including the voltage obtained by the Fuzhangzhang prayer, and the weight of both of the optoelectronic components of the two or the total storage of the electricity. Τί area, or floating area and storage capacitor according to the present voltage signal. The light sensor comprises a light body. Sense, the signal output side is stored in the photodiode; the photo-nuclear storage capacitor component generated by the optical dinuclear body ^^j; and based on the diphoto-charge storage, the overflow interpole can be output by the photoelectric first signal. The crystal is composed of the hall, and the hall number is connected between the capacitors. The gate electrode of the Japanese body receives the letter determining the storage operation. [Embodiment] Hereinafter, the description will be made based on this. A solid image device that runs through this will refer to the attached drawings. The same reference symbols denote the same or equal zero. 200810540 盖二A exemplification, 6 is a solid-state specific domain road map according to the first embodiment of the present invention, and Fig. 7 is a schematic plan view thereof. -Su-Hui; 1-Special--Drawing Lei Suzhen = 〇一光二嫌 PD Bu receiving light and generating and storing photoelectric one, '- private t-round V electric yang system is adjacent to the photodiode PD1 and is designed to transmit photo-charge极 ML3 is connected to the left side of the light through the transmission transistor T2, and an overflow gate L〇4 is set adjacent to the photodiode PD1 and is stored in the 乍=transmission overflow. Light II _ PD1 light charge; a storage power = Qi Lei rape. During the wood work, the overflow light diode PD1 is stored via the overflow gate L04. The flat transistor is connected to the floating area, and is connected to the floating area. To release the capacitor CS5; between the two ί, ϋ "Medium, or floating area FD3 and storage capacitor CS5 曰 P ~ electricity is what is the pressure; and a selection of transistor X9, is connected to the amplification 屯The Japanese body SF8 is used to select a halogen or a halogen element. 郷Wei Da, according to the solid-state image pickup device of the present embodiment, is a two-dimensional or -=1 set of a plurality of halogen elements H 4tU , /12 force storage, in the mother-single, drive transmission transistor T2, storage S Emperor S7R system t are connected to the overflow closed-pole L04, and ' The column displacement temporarily stores the crying ^^ gold ff to set the electrode between the electrodes R6. The crystal electrode X9 between the pole electrode two, the line ^14 is connected to the selected electric body to the input _ miscellaneous, and the butterfly = connection In view of the present invention, FIG. 8A shows a photodiode diagram of a PD b overflow interpole L〇4 and a photoreceptor stored in a photoreceptor. The criminal system shows a schematic cross-sectional view of the CS5 region of the light in the book, and the first one in the prime-body PD-transmission transistor T2, the floating region 10 200810540 domain:, the transistor S7, and the storage capacitor (3) - n-type Shi Xi semiconductor based on a cross-sectional view (p-well) 2 and formed with l〇c〇s (^ j forms a P-type well L2 '2425. And in the n-type semiconductor domain formation In the P-type well 21, the 3P is connected by the Pn, and the charge ^ wheel ^ person = 2^ type half_region exceeds the pre-predetermination, and the surface layer is shaped by the body region 31. In the P-type well region formation = the other regions are separated by a predetermined distance from the semiconductor region 34 is i7pr-f:; 11 200810540 immersed. Moreover, in the n + -type semiconductor region 33 and the n + -type semiconductor In the region associated with the domain 34, a gate electrode 40 made of polysilicon or the like is formed on the top surface of the p-type well 21 via a gate insulating film 39 composed of yttrium oxide or the like. And, in the surface layer of the p-type well, a storage transistor S' having a channel formation region is provided, and the n+ type semiconductor region 33 and the n+ type semiconductor region 34 are used as a source/depolarization. In the region where the films 22 and 23 are separated, the P + -type semiconductor region 41 as the lower electrode is formed in the surface layer of the p-type well, and on the top of the layer, the upper electrode is made of polycrystalline germanium or the like. The 43 is formed via a capacitor insulating film 42 made of yttrium oxide or the like. These constitute the storage capacitor CS. An insulating film 44 composed of yttrium oxide or the like is formed so as to cover the overflow gate LO, the transfer transistor T, the storage transistor S, and the storage capacitor CS. An opening region is provided which extends from the n + -type semiconductor region 32 and the n + -type semiconductor region 33 to the upper electrode 43 via the n + -type semiconductor region 34. Further, a wiring 45 connecting the n + -type semiconductor region 32 and the upper electrode 43 and a wiring 46 connected to the n + -type semiconductor region 33 are provided. The driving line 0 is connected to the gate electrode 38 of the transmission transistor T, and the driving line 0 s is connected to the gate electrode 40 of the storage transistor S. The drive line is connected to the gate electrode 36 of the overflow gate LO. The drive line 0LO can be subjected to application of a drive pulse signal or to a zero potential (as in the case of a P-well 21). The threshold voltage of the overflow gate LO is set to be lower than the threshold voltage of the transmission transistor T, so that the excess charge exceeding the saturation value of the photodiode PD is effectively flown to the storage via the overflow gate LO. Capacitor CS. When the threshold voltage of the overflow gate LO and the transmission transistor T are set to be the same, 'setting the potential to a value higher than the zero potential will cause the excess charge exceeding the saturation value of the photodiode PD to effectively pass the overflow gate. The LO flows to the storage capacitor CS. Regarding the other constituent elements 'that is, 'resetting the transistor R, the amplifying transistor SF, 12 200810540, the driving line ^ and ^, and the output line 〇υτ, the wiring 46 is not shown in the circuit diagram, and the result of the configuration is made. The equivalent unillustrated figure of FIG. 6 is disposed in the semiconductor substrate region shown in FIGS. 8A and 8B to form a capacitor Cpd having a relatively shallow potential, and the floating region C caviar state CS is configured to have a relatively deep potential. The capacitor LFD □ Lcs 〇 camera ί 7, 8, and 8B show the solid state dynamic time diagram. ', /. Fig. 9 is a diagram showing the erasing of the age S before the driving of the solid-state image pickup device according to the present embodiment, and the transmission is completely deficient, and the second day: the body R is set to be closed. At this time, the optical diode PD is in a field 'resets the R switch to the floating area n to store the electric bar cs (time: ti). Then, immediately after the (4) + (9) transmission 靡 1 信号 1 1 1 1 1 1 系 系 系 系 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 阈 阈ingredient. During the storage period (time: t3), the switch can reset the transistor R, and select the transistor X in the left closed shape. In the saturation, the photocharge is etched by the photodiode PD to the multi-photoelectric charge. In the case where the flow gate is L〇 and stored and discarded, it is valid_. In this way, why not Zhou? The middle 'storage operation is performed by receiving light with each of the same storage_poles. ", the same light - after the storage has been completed (time: t〇, the transistor χ will be switched to the signal Ν1 contains the value between the amplified transistor SF and the white U), f is the noise component of the solid pattern.乂作13 200810540 嘹—ii, turn on the transmission transistor 1' to make the light stored in the photodiode pd f__FD(_7), and the _=^1 also turns on the storage transistor S to store The photodiode p is transmitted to the floating region FD and the storage capacitor c _ ^ and the signal is read as the charge stored in the CS to be mixed, and arranged in a block diagram of the solid-state imaging device of the embodiment. Dimensional arrangement of the pixel arrays 100 to 103 on the periphery, set, ^) 'Qinhu N2 and (in the FD and cs accept the charge / voltage conversion of the full ^ 隹 除 除 除 知 由 由 由 由 由 由 由 由 由 由 由 由[(S1+N1) 2 machine components and fixed pattern noise components.) Another aspect 仃 = component fish solid security: / by item, therefore, when removing random noise map, ! , the noise N2 is stored in the frame to record ^; subtraction ^ to perform the noise removal operation 妒 S1 Syria, Μ T k where the mother clears the saturation of the noise before the j S1 and the signal on the supersaturation side (S1+S2). The subtraction circuit mother I is formed on the image sensor wafer or forms an individual wafer, and the body divides the capacitive region FD and the storage capacitor cs, and In the case of the shell, compared to the case of resetting the floating area, the _ penetration 4 yang + is not large, and the saturated sag of the supersaturated side signal S2 _ _ _ _ _ _ _ _ _ _ , so the marriage ===== 14 200810540 The size of the prime can effectively extend the dynamic range while maintaining 弁-

The body is expected to form a large storage with high area efficiency. H. The synthesis of the signal of the broad-moving and dry-hearted can be achieved by selecting the pendulum::, (S1+S2), and then S1 and (8) The choice of _ can be obtained by I choose ^1 /, the middle -. We recommend that the Na should be 'voltage' to avoid the switching beam being lower than the S1 saturation tank and set to high power at the same time; and the second power: FD CCS / CFD can make this Gain and saturation before the second cause 4; raw = seek has a dynamic range of shadow '= measures the combination of self-sufficiency from low brightness up to high brightness linear money plus = as shown by the above (4) B intestine display, The signal charge on the _ and the supersaturated side is mixed into the saturation side (4) i: the second two S1+S2). At least the proximity signal S1 is included before saturation. -1^=1^=°1' This will enhance the supersaturation side. For the enhancement of the noise component (such as heavy dark current) ° it itlff, even in the vicinity of the selection point between the signal before saturation and the supersaturated side ^, the floating ^ 2 FD can be reset in the subsequent field. And immediately read the potential as N2, and make sure enough thanks

Ratio, and take in the previous field (S1 + S2 + N (S1 + S + 2) - N2,) to remove the fixed pattern noise component. "Difference (that is, the signal before the saturation (S1 + N1), and the reading of the noise signal N1 fell as i!; ?

Month / = Therefore, you can achieve high-quality and high S/N ratio (low noise) in low-purity area towels without causing afterimages. In the operation on the super-saturation side, after the charge of the overflow photodiode PD has been transmitted through the overflow idle pole L〇15 200810540 in the same storage period, the signal on the low-luminance side is performed. Read. After the reading = reading, at time ts, the signal electric 1 before saturation remaining in the floating area FD is mixed with the supersaturated signal charge, and then the mixed electric charge is read. Furthermore, at this interval t8, when the storage transistor s is turned on, the floating region is connected to the storage capacitor CS having a large capacitance, and the potential of (FD + CS) is directed in the positive direction. Therefore, even if the photodiode PD is in a saturated state, the photocharge of the photodiode PD is completely transmitted to (FD+CS)', and even in the vicinity of the PD saturation, there is no residual thunder: when stored After the capacitor cs is saturated, the threshold voltage of the transistor S can be reset, and the excess charge can be efficiently discharged to the power supply VDD, so even when we use the p-type 矽 half Bl ( ( bl ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° ° 重 重 重 重 重 重 重 重 重 重In the low-brightness imaging where the photodiode PD is not saturated, it can be borrowed from the former and the high-sensitivity and high-polarity PD photoelectric body PD money and high-brightness camera. (4) The signal obtained by the noise, that is, the front of the saturation === side tear (4) 2), the real device on the side of the butterfly, without reducing the wide range of low brightness, in addition, the sensitivity on the side of the degree Achieve wide pressure. This will allow the power supply to be more than the power supply of the general purpose. Moreover, it is intended to meet the increase in the number of microscopic devices in the future. The addition for reading has been reduced to a minimum, so it does not cause the size of the element to be stored in the same way. The storage week between the embodiments is also #' without dividing (10) the brightness side and the low brightness side. It does not even straddle the frame. Even in the case of moving images, 16 200810540 can avoid deterioration of image quality. Moreover, regarding the leakage current from the floating area FD, the image sensor according to the embodiment The minimum signal of (S1+S2) becomes the saturated charge from the photodiode Pd, thus enabling the image sensor to process the amount of charge greater than the leakage current from the floating region FD. This will provide an image sensor independent of Advantages of the FD leakage effect. Second Embodiment The solid-state image pickup device according to the present embodiment is modified according to the circuit structure of the pixel in the solid-state image pickup device of the first embodiment. FIG. Figure 12 is a schematic plan view of Figure 12. Each element contains: a photodiode PD1 that receives light and generates and stores a light load; a transfer transistor Τ2, adjacent to Light two The body PD1 is provided and transmits a photocharge. A floating region FD3 is connected to the photodiode pDj.' through the transmission transistor T2, and is adjacent to the photodiode PD1 and is provided with the photodiode PD1 during the storage operation. Photoacoustic charge; - storage capacitor CS5, between J, through the overflow gate L04 to store the photo-charge of the overflow photodiode pD1; one or two sets of transistor R6, connected to the storage capacitor (3), with ^ Ray = tFD3 signal The electric charge is stored between the area FD3 and the storage capacitor CS5; an amplified Thunder, tt, or the floating area FD3 and the storage capacitor Hs5 are both SiS昼 and the element: the ghost-selective transistor Χ9 is connected to In the example of the second embodiment, the solid-state image pickup according to the present embodiment is stored for storage. In each element, drive 3D or -dimensional array plus;; by column shift register: line system. Furthermore, a memory is used to generate output. Output_pole, block Displacement Temporary 17 200810540 In the example of the first embodiment described above, the solid-state imaging according to the present embodiment is not limited, as long as the electric lion of the floating domain FD3 can be set to be suitable for the pixel selection. It is sufficient to operate or not select the operation. Therefore, the transistor X9 and the driving line 0 χ 14 are selected abbreviated. J name, , , , , and the solid-state imaging film according to the present embodiment shows the light diode Pm in the element. The general cross-sectional relationship between the wide pole LO4 and the storage capacitor II CS5 region is the same as that of the first one two-two>: FIG. 8A. Therefore, the figure is omitted to avoid the rest of the graph. Furthermore, the two-dimensional image device is omitted. The photodiode TM in the pixel, the transmission transistor Τ2:, the ϊ$ region, the FD3, the storage transistor S7, and the storage capacitor c are the same as those in Fig. 8B, and therefore, the figure is omitted to avoid the re-image. According to the embodiment shown in Figures U and 12, the solid-state imaging image will be described. This is shown in Figure 13. According to the driving mode of the solid-state image pickup device of the embodiment, the body is turned on and the current is depleted. The body R is turned off, and the photodiode PD is at a complete CS ( Day fin opened? Crystal R to reset floating area FD and storage capacitor cry, storage capacitor cs) reset noise is floating = miscellaneous § #bN2 is included in the amplified transistor SF value. The noise component. During the storage period _ (^匕' is the 曰 曰 S, the traverse transistor τ, and the transistor R is reset, the excess photocharge of the stored electricity passes through the overflow pole L0::= In the preparation of cs. This operation allows the overflow of the light diode]? 1) # child in the case of storage, but can be used effectively. In this way, before the saturation = the storage operation is not picked up by the same In each of the storage cycles, the light is received and received in the next two cycles. A ', the same photodiode to switch the selected transistor X after the storage has been completed (time: t4,) Turn on, then after 18200810540, read the memory stored in the photodiode pj), which is contained in the threshold cake of the amplified transistor SF. This is the ^^ fine packet first 仏 元 传输 传输 传输 传输 传输 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Fd, discard float = reset operation period, at time: t6;; ^ί^ _ (4), the solid example shown in this example (four) 嶋 (four) - the embodiment of the midpoint mode, by each element = each j to avoid f. In the embodiment, continuous dynamics. "The second ratio, and the broadness does not reduce the low-light sound = the solid-state imaging device of this embodiment is the power supply voltage. This will not be used beyond the general use range. Miniaturization of the sensor. And Η, 二-, the camera device will be able to meet the image in the future, resulting in an increase in the size of the pixel. The addition of '*' has been reduced to a minimum of 70, so it will not be stored in the same period of 4: known as the sensor, this embodiment is the side; the frame. Even in the image sensor of the moving image, the leakage current of the domain FD, the minimum reading of the capacitance of the moving & field FD and the storage capacitor CS according to the present embodiment 19 200810540

The letter, 'that is, (cFD+ccs) becomes (supersaturated charge) + (from the photodiode p charge), thus enabling the image sensor to be processed larger than the floating area FD, which will provide the image sensor without The difference between the effects of the leakage and the leakage of the solid-state imaging device according to the present embodiment is based on the overflow gate of the halogen in the solid-state imaging device of the example: The equivalent circuit of the four elements of the embodiment and the schematic plane w, which corresponds to the respective embodiments of the first embodiment. Moreover, the @16 and 17 points ^ g diagram equivalent circuit diagram and schematic plan, these diagrams correspond to the second each element includes: a photodiode PD1, receiving # 何一FD3 ' is connected through the transmission transistor T2光光二极_了. f ΐL04' ' is adjacent to the photodiode PD1 and transmits the photocharge of the overflow photodiode PD1 during the storage operation period; a storage; 曰1, gate L04, storing the overflow photodiode 'Photon charge; 4 (Figure U), or storage capacitor css (Figure in the domain S7, set in the floating area and stored electrons, body SF8, used to float the area FD3, = S5 ^ = large crystal The signal charge in both CS5 is read as a voltage; and the electric-amplifier amplifying the transistor to select a halogen or a halogen element, which is connected to the first and second embodiments as described above. In the image device, each of the plurality of Z-state arrays having the plurality of pixels arranged as described above is stored. In each pixel, the driver 'is connected to the transmission transistor by :, quasi- or -dimensional respectively. T2, storage transistor ST7, heavy-pole electrode, and gold-driven by column shift register曰^ Gate is selected as the gate electrode of transistor X9. Further: Sushan, select line 0x14 series connection 20 200810540 output. As in the example of the above-mentioned embodiment, according to the frame, there is no limit, as long as The electric light of the floating area FD3 makes it possible to touch the pixel of the selected county or the lion. This selects the transistor X9 and the drive line 0χ14. The mouth is 俨 俨 Λ 18Λ1 in the solid state camera device of the example A schematic cross-sectional view of the photodiode and the storage capacitor 1 (3) in the pixel. Here, in the region where the i3G and the n + -type semiconductor region 32 are associated with each other, the semiconductor is plentiful. The commission p + half _ domain 5 () is electrically connected to The operation method of the camera device of the P+ embodiment is as follows: the block diagram of the solid-state camera device is as follows: the signal read by each 昼素, the amplification ratio of the dynamic range is '=== Coincidentally, the first embodiment is electrically connected to the ρ+Fengyi and the second embodiment. Since the solid-state imaging of the Ρ+ semiconductor region allows the seven-zone region 31 and the lip-shaped well 21, In the embodiment, the number of wirings of the phase-removing signal is reduced, and In the high density storage device is a solid-state image pickup compared to the above-described third embodiment 10 4 S tons more advantageously by mobile charges overflow light diode capable of FIG.

For the image of the device, the half of the surface flow gate LO type "electric s:;; r through 21 200810540 substrate surface or its surface near the surface formed into the body pd, the overflow between the poles, and storage Capacitor csm Fig. 19 shows that the photodiode and _semiconductor semiconductor region ί 51 are a type 1 region having a doped type, an n-type semiconductor region and an n + -type semiconductor region 32. Further, it is lower than the 11-type semiconductor region 3 〇 the above structure Helps reduce the light diode barrier. This will allow the electricity between the charge storage capacitor CS to smoothly move to the storage capacitor cS. / θ shirt light - the charge of the polar body PD can be seen in the solid-state imaging dream shown in Figures 20 and 21. The overflow τ of the plate at a predetermined depth is τ', which becomes parallel to the base conductor layer and the portion below the g_ breakdown barrier. The layer is low-first-pole 1^ and the storage capacitor CS FIG. 20 is an example of a surface diagram of a solid-state diode PD, an overflow gate L〇, and an image according to the present embodiment, showing an area of the W 〇 and the storage capacitor CS. In the spit, =3⁄4 Two: The semi-conducting breakdown barrier in the oblique drop. From the η type by the photodiode roH type ^, f The breakdown path of the f region 32 constitutes the charge breakdown of the polar body PD, and the flow path, thus allowing the overflow of the optical capacitor CS. "When the storage period, the charge is smoothly moved to the storage 20 ® ° « In the example, the n-type semiconductor region 53 is formed in the region of the gate electrode type semiconductor & of the overflow gate 1^0 so as to be connected to the 11 main. In this embodiment, the movable semiconductor domain 53 is further extended below the n + -type semiconductor region 32. (10) The description 4 helps to reduce the breakdown barrier in the overflow gate L〇. from. Type half 22 200810540 The path constitutes a breakdown of the light-to-n+-type semiconductor region 32 from the light-emitting diode bipolar cs_path, thus allowing movement to the storage device. 何 何 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷 电荷The two 8122 in the image device are based on the compact circuit of the solid state (four), and Figure 23 is a schematic plan view. Chengzhi 昼It:, the state photo "set to have two pixels" a,, and "b" set of capacitors crying every checker 'each elementary block contains two diodes and two storage is stored ί 2 The block light diode is connected to the leg and receives the light and the polar body ifal ί transistor T_Tb2, which is adjacent to the light a ^ τ 〇 and 5 and transmits the photocharge; a floating region FD3, through the 4 and the shock _Connected to the light diode ship and PDb^ set _! in storage; A product tlt0b4, respectively adjacent to the optical diode PDai and pdm, and i-. Shooting ^^^ between the individual light diode PDaWpDbl, Photoelectricity: f storage operation __Do not overflow overflow gate · one tongue" + day g do not store the light emitting diode PDal and PDb1, the photoelectric two, the field δ and the electric body R6 ' is connected to the storage capacitor csa5 and Csb5, the nickname of each of the capacitors csa5 and csb5, and the floating area FD3 stored; two ic == sa7 and put =, day 1 between the floating area FD3 and the storage b5, a magnifying transistor SF8, It is used to read the ΐ electric charge of the floating area, or the floating area FD3 and the storage capacitor csa5 and the amplified thunder load as a voltage; and - select the electric (four) X9, which is connected to the big electric j SF8 ' Day day biotin or to select pixel block. In this manner, the basic dendrite block is used to include two photodiodes, two storage capacitors, a floating region 3 amplifying transistor SF, a reset transistor R, and a selective transistor X. In the solid-state imaging device of the present invention, the plurality of cells arranged in the above-described manner are stored in one-dimensional or --- columns. In each of the alum blocks, the drive lines 23 200810540 LOb 0Ta, 0Tb, 0Sa, 0Sb, & 0R are respectively connected to f〇M, the transmission transistors Ta2 and Tb2, and the storage transistor selection line is connected to the selection. The output of the transistor X9 is symmetrical, and is controlled by the column displacement ^ state to produce an output. The structure is not limited, as long as the floating area FD3i can be used so that it can enter the Tt-weight county or the non-selected county to select the transistor X9 and the drive line 0χ. The port is displayed according to the solid-state camera of this reality.昼素块,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The map shown in the first embodiment is the same, and therefore, the figure is omitted to avoid the rest of the figure. Furthermore, the polar bodies PDal and PDbl, the transfer transistor core 2 and the addition, the floating area fd3, which are displayed in the pixel, The storage transistor, Sb7, and storage capacitors CSa5 and csb5, the schematic cross-section of the region is the same as that of Fig. 8B of the first embodiment, and therefore, the figure is also omitted. The present invention according to f 22 and 23 In the embodiment, a method of inserting a solid-state image pickup device will be described. Fig. 24 is a driving sequence of the solid-state film set according to the present embodiment® in a parental block, when the elements "a" and "b" are waiting When reading, the reading can be performed by using the same floating area FD, amplifying the transistor SF, resetting the transistor R, and selecting the transistor X. And proceed. First, before the exposure storage, the storage transistor Sa of the halogen "a" is set to be turned on, and the transmission transistor Ta and the neon crystal R are set to be off. At this time, the halogen Pole PDA is in the -completely depleted state towel. Next, the recording transistor is cut to be turned on to reset the halogen "a", the floating region FD and the storage capacitor csa (time: ti). Then, the re-noise of (f+CSa) obtained immediately after the reset transistor R has been switched off is read as the noise signal N2 (time moxibustion). Here, the noise h#uN2 & includes a change in the threshold voltage of the amplifying transistor SF, as a fixed 24 200810540 overflow interpole LOa, and the remaining photocharge is transmissive, before saturation, Under, but can be used effectively. In each of the book phase cycles, the storage operation is performed by receiving light with the same storage period photodiode. ^ ^ «If " ί? X ° ^ After the reset, reset the floating area qing: «, and will be used as a fixed figure 杂 二 i i 体 体 体 体 体 体 体Storing rt capacitor = in the photodiode PDa, floating domain 2 (SH^ + Nl ^ i carrying optoelectronic i / j " / 匕; and the signal is read as open, Ιΐ ίί, also in 昼素,, b, The central storage transistor Sb is set to say that (4) the transistor ΐ reset transistor R is turned off. Then, the second is turned on to reset the oceanic region FD and the storage capacitor csb, and the transistor R Has been switched to the value obtained after closing, CSb)

; ίίίί TM!#bN2 〇 ? ^tEN2 The change in the threshold voltage of SF as a noise component of the fixed pattern. Stored in between (time: ^ 'saturation before the photocharge is stored by the photodiode TM to store excess photo-charge and then stored through the overflow gate LOb. After completion (time: ti〇), the transistor will be selected χSwitch to open. The weight is connected ($ crystal r switches fine to reset the floating area), and the ro reset noise obtained after 2 reset is read as the noise signal called time. Switching the transmission transistor Tb to turn on to completely transmit the optical signal stored in the photodiode pDb 25 200810540 to the floating region FD (time), and the signal charge f is completely transmitted to the photocharge in the first polar body PDb to The floating area ^ and the storage ϊ ϊ ϋ : : : : 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft ft Because the floating area is positive, the amplified crystal "crystal R, and the selected transistor system are self-reset with a ratio of each two elements, so the pixel area of each pixel can be reduced. The ratio of the elements of the group is set to be different. The block diagram is the same as that in the first embodiment, which is executed by the continuous point method, and is read by each of the alizarins, and the Qiangang transmission and synthesis system and the first full 乍Γ ' are continuously driven to the 昼 块 block. And using the operation from (-rung rhyme), we can choose the signal obtained by the choice of the element; or, = mix and add the halogen signal in the prime block to use the signal. * " In the absence of this In the case of the solid-state imaging device of the embodiment, in the case that the degree is ii: ΐ ΐ 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 高 高It is reduced to the shirt, so it is not the phase: ί Storage: (7) sensor, this embodiment can still avoid the degradation of image quality, in the imaging of moving images, and 'About the leakage from the floating area FD Current, according to the shadow of the embodiment 26 200810540 Image sensor, the minimum signal of (S1+S2) becomes the saturated charge from the photodiode pd, thus enabling the image sensor to process the leakage current larger than the floating region FD The amount of charge. This will provide an image sensor that is immune to FD leakage. The sixth embodiment 夂" The solid-state image pickup device according to the present embodiment is modified in accordance with the circuit configuration in the solid-state image pickup device according to the first embodiment. Fig. 25 is a view of the image pickup device according to the present embodiment. The equivalent circuit diagram of the four elements in Fig. 26. Fig. 26 is a schematic plan view thereof. 2. The solid-state image pickup device according to the embodiment has four elements "a", "b", "c" and, d The composed elementary block is the basic unit, and each element block contains four diodes and four storage capacitors. Each elementary block contains: photodiodes PDa, PDbl, PDcl, and PDdl , receiving light and generating and storing photo charges; transmitting transistors Ta2, Tb2, Tc2", and Td2, respectively, adjacent to photodiodes PDal, PDbl', PDcl", and PDdl'' 'Setting and transmitting photocharges; a floating region FD3 is connected to the photodiodes PDa, PD, PD, PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD PD Overflow gates LOa4, LOb4, LOc4,, and LOd4,,,, are adjacent In the light diodes PDal, PDbl, PDcl,, and PDdl,, and during the storage operation, the floating charges of the individual photodiodes PDal, PDbl, PDcl", and PDdl, are stored; The capacitors CSa5, CSb5, CSc5,, and CSd5, respectively, store the overflow photodiode PDal via the individual overflow gates L〇a4, LOb4, LOc4, and LOd4 during the storage operation, PDbl, PDcl", and pDdl,,, light, charge, a reset transistor R6, connected to each of the storage capacitors CSa5, CSb5, . . . . . . . . . . . The signal charge in the storage capacitor (3), CSC5, and CSd5, and floating region FD3; storage f, crystals Sa7, Sb7', Sc7", and Sd7,,, are located in the floating region]^3 and storage = valley state ^Sa5, CSb5', CSc5'', and CSd5,,,; amplifying the transistor SF8, w to charge the floating area FD3, or floating area and storage capacitor: CSa5, CSb5', CSc5" And each signal charge of CSd5''' is read as voltage; one selects transistor X9, which is connected to Large transistor SF8, used to select halogen or 27 200810540 = block. In this way, as a basic unit, the resetting of the transistor R, and the selection of the == domain FD, the amplifying transistor SF, and the second solid-state imaging device, the plurality of elements arranged in the above arrangement, The train is stored in 0. In each pixel block, the drive lines 0LOa, 0 -, 0L〇C/L〇d, 0Ta, ", ", ", I, ", ", and Sd are respectively connected to the overflow. Flow gate L0a4, L0b4, L0c4,,, another

Ta2;, Tb2, ' :c2?, ' ^^ « 0 Sd7 , and reset the gate electrode of transistor R6. The recording selection line 0x of the driving drive is connected to the selection transistor. The output line 〇 UT15 is connected to the output side source= of the selection transistor X9, and is controlled by the displacement register to generate an output. (4) In the example of the embodiment of the present invention, the camera device according to the present embodiment is not limited in any way, as long as the voltage of the floating region FD3 can be fixed to a suitable one to enable the selection operation of the pixel or You can do it by non-selection. Therefore, ^ transistor X9 and drive line 0χ are selected slightly. In the solid-state imaging according to the present embodiment, the schematic cross-sectional view represents the pixels in the block "a,,,,,,,,,,,,,,,,,,,, Polar body pDal, pDM, pDcY' and PDdl"', overflow gate LOa4, LOb4, L〇c4,, and (4) private,,, and storage, electric device, CSa5, CSb5', CSc5" And the area of CSd5,,, the cross-sectional view is similar to that of FIG. 8A shown in the first embodiment, and therefore, the figure is omitted to avoid the re-image. Furthermore, corresponding to the photodiodes PDal, PDbl in the pixel, , PDcl,, and PDdl,,,, transmission transistors Ta2, Tb2', Tc2", and Td2,,, floating area FD3, storage transistors Sa7, Sb7,, Sc7,, and Sd7,,,, The schematic plan view of the solid-state imaging device in the region of the storage capacitors CSa5, CSb5, CSc5, and CSd5 is similar to that of FIG. 8B of the first embodiment, and therefore, the drawings are also omitted. Here, according to the embodiment shown in Figs. 25 and 26, the operation method of the solid-state image pickup device will be explained. Fig. 27 is a timing chart of driving of the solid-state image pickup device according to the embodiment. In each element block, when the elements "a", "b", c, c, and, d, are waiting to be read, 28 200810540 = will ====, SF, reset First, the polar body PDa is in a completely vacant state. 〗 〖-Jing a storage Ϊ 重 ± ± 设 电 电 设 设 设 设 设 设 设 设 设 设 设 设 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电The chowder is used as a noise signal N2 (time.t2). In order to change the voltage of the idle voltage of the amplifying transistor SF, the photocharge of the PDa household = (4) is stored by the photodiode and the electric field is ^^: the excess photocharges - the overflow gate LOa In this case, κ is called, and the noise of the _ _ _ _ _ _ _ _ _ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ ̄ (Time: t7), and the signal is read as (s_). ϊ ίίΐίί Sa switch to 敝 (time: t8) to completely transfer the stored in the light II CSal# to the floating area FD and the storage capacitor H Λ diode, the floating area FD, and the storage capacitor (10) The electric sputum "b:r will be stored as (S1+S2+N1). Before the exposure storage, it is also set to "on" and the transistor Tb and the reset body R4M will be transmitted. Then, The reset transistor R is set to reset the floating 29 200810540 ^ domain FD and the storage capacitor csb, and the reset noise immediately after the reset (FD + csb) is read as the noise signal N 2 . Here: the fixed amplification __ depends on the Wei, as stored in the middle (time: t9), the photocharge before saturation is supersaturated by the light diode legs, the excess light charge passes through the overflow The gate LOb is stored in ^tti, 2CSb. After the storage has been completed (hour _, will select the electric ΐ I FT? into the fresh 'will reset the electricity (four) R _ Lai Qi to reset the floating No. 2 ν ΪΪΗ, and then ^ The TM 4 obtained after the turn is read as a miscellaneous 'i - decay; 曰1 ΐ!. Then, the transfer transistor Tb is switched on to fully transmit the optical signal in the storage m, fj The floating area FD (time to, ^, & ίΐί) completely transfers the light f charge stored in the photodiode PDb to the storage capacitor CSb. In the photodiode PDb, the floating area is (Sl3t3 Mixing, and reading the signal as "Π" after repeating the same operation for the element, e" and "d". In the solid-state imaging device of the example of the ride, because of the floating area ❹D, the amplification rate = rate = R, and select the f crystal X system with each of the four elements as a group of the ratio of the sheep plus ~ set ' so can reduce the area of the perennial element of the alizarin. All, fine, crane set in the money record and use from We can use (4) the prime block to select any element to obtain the signal obtained by the element. Or, in the case of the -averaging operation, the signal can be mixed and added with the halogen signal in the five-person block. From *^ "One round of the line is set with a ratio of each of the four pixels as a group, and the block diagram of the solid-state image pickup device of the present embodiment is the same as that of the third figure. In the embodiment, The continuous point method, the synthesis system of each -t prime = example === ratio, and the broad dynamic range _ "a 30 20 0810540 In the case where the camera device according to the present embodiment is sensitive to the sense, the Κ 俾 俾 俾 俾 高 高 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The use of Fan Zengqi 'because the addition of components has been minimized, so it is not different from the conventional image sensor that implements a wide range. In this embodiment, the storage of the phase 2 storage of photocharges is not divided. The period between the high-brightness side and the low-brightness side, that is, no straddle _. This method can avoid deterioration of image quality even in the imaging of the axis image. The leakage current like ', self, region FD' becomes a saturated signal from the photodiode pD according to the shadow (S1+S2) of the present embodiment; the denier sensor can handle the leakage larger than the floating region FD The current / what, the current. This will provide the point at which the image sensor is protected from solar leakage. The light-image device of the seven-figure, "g", will be used to store the overflow light diode. The electric D ° sub-package valley state, modified by the above first to sixth embodiments, the use of the junction storage capacitor As a storage capacitor, even if the area is not very high, the 2 electrostatic capacitance system falls on the order of G.3 to 3 ff/_2, so it is difficult to expand the dynamic range. In the example of a planar storage capacitor, the electric field MV/em or less of the #insulating film, the maximum applied voltage is 2.5 to 3 V, π = two bar is 1 bar, and the thickness of the film is set to 7 nm. The purpose is to suppress the capacitor crying edge, the current 'correlated dielectric f number is (four) 9 o'clock, the electrostatic current i is 20.8fF / " m ' Sr = 7.9 when the electrostatic capacitance becomes 9 9fF / #m2, ^ ^ In the case of % (10) 2, in time, the static Wei Rong becomes 200810540. The so-called 咼-k material allows the larger electrostatic electricity to be determined by 化 夕 (ε r: 7.9), Ta 2 〇 5 ( ε r: about 20 to 30), ^ such as nitrogen about 30), Law' ε r: about 40 to 50), and yttrium oxide. · 3)r: a planar storage capacitor having a relatively simple structure In the sub-image, the image sensor is as wide as 100 to 200 dB. It can be seen that it has dynamic and structural applications, such as stacking or trenching, which can increase the area contributed by the capacitor, allowing Das 9 to = 斤 据 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Applicable storage power, the cross section of the planar MOS storage capacitor of the first embodiment. Fig. 2 = Fig. 2 = configuration of the electric valley state CS is used to include: one as the storage ^ri; TM43 ? ^ f 29 The display plane M〇s and the street surface store the storage capacitor ϋ cs are configured to include: 'The conductor region ^ is formed on the n-type semiconductor substrate 2〇, and is formed in the emperor. The surface layer 32 of the PI well is integrated and formed; and the upper semiconductor region container insulating film 42 is formed, and the electrical storage surface pattern formed by the ^^^^ is similar to that shown in FIG. The capacitor insulation is shown as 2" with the Coats material in Figure 28, f this storage Vessel, in the reservoir 31 as shown in FIG six cry '^ such as silicon nitride, or do 2〇5. The surface MOS and the junction storage ^ crying electrical surface diagram) is similar to the flat-leaf-environment shown in Figure 29 - the example of the composition of the Coats material 32 200810540

Ta2 〇 5' and its capacitance is greater than that of Figure 29. The upper element isolation insulating film 62 is provided on the n-type semiconductor substrate 2 on the electrode 63; and the upper electrode t' is formed on the lower electrode 63 to be wired. 45 phase connection. J% stock and % lower. Ground GND is applied to the upper electrode 65. The power supply voltage VDD or the n + -type semiconductor region 32 connected to the CS ^ is formed by the source of the storage transistor / the internal phase insulating film not formed in the lower electrode 67, and the insulating film 68 is formed so as to be inserted backward. At the cathode 69, the power supply is supplied with the power VDD or the ground D ° ^ internal portion. In the formation, the upper electrode 69 is embedded in the lower electrode 67. Its shape has a larger junction area;; = = electric help: the cross-section of the device ίί:; two combined storage capacitance Figure 35 shows that the storage capacitor of the ditch has two sides, the efficiency of the capacitor. The system is configured to include: a trench TC formed by a p-type well 21 on the storage capacitor Cs to reach an n-type semiconducting layer; or a semiconductor substrate 20 type semiconductor region 7〇 formed in the trench The n+ of the lower electrode is formed so as to cover the film I ΐ capacitor insulating film 71 and be embedded in the trench Tc. Here, as a reservoir, the system is divided into n+mm 32' 72;, /;: «^ , 36 shows a section of the trench storage capacitor with junctions. . The configuration of cs is such that the trench Tc is formed in the n-type rotating body base 33 in the 200810540 type well 21; in the inner wall of the trench tc, the first and the f-domains are formed as a storage transistor; the lower electrode (four) semiconductor is formed by positive a And - an insulating capacitor, %, and an inner wall of the pole n + -type semiconductor region 32; and an upper electrode 75 formed to cover the trench TC.糸 糸 隔 电容器 电容器 电容器 图 图 图 / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / The P-well 21 on the storage capacitor cs • arrives at the n-type semi-conducting fin, and the cutter passes through the n-type semiconductor substrate 20-type semiconductor region 76 to be deeper than the trench Tfj2〇; and the inner wall of the n+ drain TC as the lower electrode A region of the depth of the capacitor insulating film is formed in the trench S 78 formed to cover the trench TC covering the TC. Here, as the storage crystal cell germanium insulating film 77 is embedded 32, and the upper electrode 78 is connected by the wiring 45 = the surface and the poles of the n + -type semiconductor region y, FIG. 38 shows a ditch storage electric 衮 ☆ ☆ Hey. It is used to contain a ditch, C, and a surface. The p-type well 22 on the storage capacitor CS reaches „type 4, and the seven-knife f is located in the 〇-type semiconductor substrate 2 〇-type semiconductor region 79, and is formed in the trench Tr/soil 0, as the lower electrode ρ+ The valley is the insulating film 80 and is recessed into the trench Tc. The erbium electrode 81 is formed as an n+ type semiconductor region 32' having a gate 7 and a source connected as a storage transistor. The σ electrode is connected by a wiring 45. Figure 39 shows a cross-sectional view of a CMOS sensor using a junction. For example, a semiconductor of the input capacitor is mounted, and an n+ type semiconductor layer is formed on the p-type smectite layer 91. And formed. ^卩n type Shi Xi semi-conducting, body region and P-type (second conductivity type) semi-conducting phase phase electrical type) half, the internal structure of the semiconductor substrate of the state imaging device is embedded in the intrusive storage Capacitor. Further, the p+ type isolation surface capacitor body (P_sub) 90 I p type is formed by the p type semiconductor layer 91. The commercial conductor layer is corrected by 34 200810540 L i. In the example of the embodiment, the p-type conductor layer domain F1T (four) one-pole PD, the overflow idle pole L〇, the transmission transistor T, a floating region κB domain S. For example, an n+ type semiconductor region 92 as a storage capacitor SC is widely formed on the plurality of formation regions, such as a Ρ-type (four) vertical extension region 92. In the η+ type semiconductor region of the electric valley, the 40 series shows a cross-sectional view of a CMOS sensor using an insulating film capacitor and a storage capacitor. This is the 感 ^ ^ ^ In the 'first Ρ type worm crystal iilal s. and form the body substrate, the rotating layer is separated by an insulating film on on on on on on on 一 一 一 一 一 P P P P P P P P P P , , , , , , , , , , , , , , , The H-system is G = ς, and the container is formed, wherein the semiconductor base === The capacitor is operated on the first junction. The other structure is the same as the CMOS sensor shown in Fig. 39. Between S. The 41 series shows a cross-sectional view of a CMOS sensor using an insulating film capacitor fish-type storage capacitor. The aging is formed in the form of a photodiode-type semi-conducting degree == (1st floor system ^ 921 _ _ _ _ Two or two electricity during the charge storage period 'this will allow the overflow light to be fascinated by various storage capacitor systems can be applied to the above 1st to 7th implementation ^= 壬35 200810540 Example 1 is manufactured by manufacturing a conductor of a wire-like conductor. The device element has a two-dimensional array of elements: the number of t-items, column) χ48_ ), 7·5_square 2 Ϊ region f Cfd=4 σ, storage capacitor fF. Each storage capacitor is composed of Γ石夕, =^广/, that is, polycrystalline oxide oxide-dream capacitor and polycrystalline In the case of the capacitors of the eve, the signals S1 and (8) are the same as the voltages S1 sls^fj000 mV 0 5 "(S1+S2), which are the same value of 0.09 mV. The switching voltage from si to is set to 4 〇〇 mV lower than the saturation voltage of the signal S1. At each switching point, the s/n ratio of the signal (S1+S2) to the residual noise is higher than 仞 dB'. This allows a solid-state imaging device with high image quality to be obtained, and the range of 丨(8) is obtained. Moreover, during the irradiation with high-intensity light, the excess photo-charge of the overflow photodiode PD can be efficiently actuated by the overflow gate, so that the excess photocharge in the adjacent pixel is suppressed. , and production 』 = anti-blooming and smearing. In this example 1, the expansion of the dynamic range can be achieved on the high luminance side while still maintaining the south S/N ratio. Example j According to the solid-state image pickup device of the present invention, a solid-state image pickup device element is manufactured by arranging pixel blocks in two arrays (the number of pixels: 640 (column) x 240 (column)). Here, each elementary block is formed by arranging 2x2 light diodes and storage capacitors on a basic pixel block in a size of 7//m (length) x 3.5//m (width). . The number of valid pixels is 640 (column) χ 480 (column). In each element block, by applying a trench storage capacitor structure, the floating area capacitor CFD is set to 3.4 Ff, and the storage ^ 36 200810540 capacity Ccs is set to 100 fF. The saturation voltages of signals S1 and (S1+S2) are 500 mV and 1000 mV, respectively. The residual noise voltage, which remains in S1 and (Magic + § 2) after noise removal, is the same 0.09 mV value. The switching voltage from S1 to (S1 + S2) is set to be 400 mV lower than the saturation voltage of 彳§ S1. The S/N ratio of the residual noise to the signal at each switching point (S1+S2) is higher than 4〇 dB, thus allowing the solid-state imaging device to achieve high image quality. Get the dynamic range of li〇 dB. Moreover, the high-brightness light illuminates the excess photo-charge of the overflow photodiode PD to the storage capacitor thief, so that the excess photo-electricity leaking into the adjacent element To suppression, there is enhanced anti-blooming and smearing.曰 拉古〗 〖Example 2 towel can achieve the expansion of the secret range on the 1^ degree side while still maintaining the JVJN ratio 0. It should be understood that the present invention is not limited to the above embodiment. For example, the application of the solid-state image pickup device in this embodiment. It is also possible to linearly align the halogens in the image forming apparatus of the present invention; the first steps obtained by separately forming the halogen in the two-secret image device can achieve an unprecedented wide dynamic range and high contrast ratio. Λ 1 Ancient ϋ ϋ storage and other shapes are not particularly limited. In order to do ίΐί random, memory) memory storage capacitors or ^ have been developed in various ways. It is not restricted to the root broadcast too much BH ’ as long as it is used to cover the light. Solid-state camera is connected to: 'tilt. It is a matter of course that the invention may be modified and modified without departing from the spirit and scope of the invention. L, the consumption can be carried out in the present invention, the solid-state image pickup device according to the present invention can be used as an image sensor, and used for a digital camera, a camera phone: a camera on the camera - deameras A ^ vision - Attached to the instrument according to the operation method of the private _ photo county can be made (four) to be wide and wide 37 200810540 sad range of image sensors. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an equivalent circuit diagram of Patent Document 1. FIG. 2 is an equivalent circuit diagram corresponding to Patent Document 2. FIG. 3 is an equivalent circuit diagram corresponding to Patent Document 3. FIG. 4 is an equivalent circuit diagram corresponding to Patent Document 4. FIG. 5 is an equivalent circuit diagram corresponding to Non-Patent Document 3. The dip is a four-dimensional circuit diagram of a pixel in a solid-state image pickup device according to a first embodiment of the present invention. A shirt f is a schematic plan view of a pixel in a solid-state image pickup device according to a first embodiment of the present invention. According to a first embodiment of the present invention, the present invention is shown in a schematic diagram of a solid-state imaging device. According to the first embodiment of the present invention, the 〇1, the overflow gate L04, and the storage capacitor CS5 are displayed in the solid-state imaging device! #S7 Pole body PD1, transmission transistor T2, floating area FD3, Store the electro-crystal and diagram, a schematic cross-sectional view of the area of the storage capacitor CS5. Figure. θ is a block diagram of a solid-state image pickup device according to a first embodiment of the present invention, in accordance with a driving timing of a solid-state image pickup device according to a first embodiment of the present invention. Equivalent Circuit Diagram A schematic diagram of a pixel in a solid-state image pickup device according to a second embodiment of the present invention, in accordance with a second embodiment of the present invention. Fig. I3 is a diagram of a pixel in a solid-state image pickup device according to a third embodiment of the solid-state image device according to the second embodiment of the present invention, corresponding to the f-embodiment. A schematic plan view of a pixel in a solid-state image pickup device according to a third embodiment of the present invention. This plan view corresponds to the first embodiment. = 16 is a solid-state four-effect circuit W according to a third embodiment of the present invention, and the equivalent circuit diagram corresponds to the second embodiment of the second embodiment of the present invention. A plan view which corresponds to the second embodiment. Cross section of the spoon. , like the section of the picture in the clothing. 9 is a cross-sectional view of a pixel in a camera device according to a thin embodiment of the present invention, such as a cross section of a pixel in a camera device according to a fourth embodiment of the present invention. The equivalent of the halogen in the solid-state image pickup device of the fourth embodiment of the month = 2 = the basis of the two elements of the photographing substrate according to the fifth embodiment of the present invention The two pixel diagrams in the image pickup apparatus are the circuit diagrams of the four books in the solid-state image pickup apparatus according to the sixth embodiment of the invention according to the fifth embodiment of the present invention. . FIG. 27 is a seventh embodiment of the present invention, and is a seventh embodiment of the present invention. FIG. 28 is a seventh embodiment of the present invention. A cross-sectional view of a halogen in a solid-state image pickup device of an embodiment. A section of a solid-state image pickup device according to a seventh embodiment of the present invention is a cross-sectional view of a pixel in a solid-state image pickup device according to a seventh embodiment of the present invention. Figure 31 is a cross-sectional view showing a halogen in a solid-state image pickup device according to a seventh embodiment of the present invention. Figure 32 is a cross-sectional view showing a pixel in a solid-state image pickup device according to a seventh embodiment of the present invention. Figure 33 is a cross-sectional view of a pixel in a solid-state image pickup device according to a seventh embodiment of the present invention. Figure 34 is a cross-sectional view showing a pixel in a solid-state image pickup device according to a seventh embodiment of the present invention. Figure 35 is a cross-sectional view of a pixel in a solid-state image pickup device according to a seventh example of the present invention. '36' is a cross-sectional view of a halogen in a solid-state image pickup device according to a seventh embodiment of the present invention. 37 is a sectional view of a halogen in a solid-state image pickup device according to a seventh example of the present invention. Section Ξ3. 8 is a cross-section of a halogen in a solid-state image pickup device according to a seventh embodiment of the present invention. The cross-section of the pixel in the solid-state image pickup device according to the seventh embodiment of the present invention is Ξ4. A cross section of a halogen element in the solid-state image pickup device of the seventh embodiment of the present invention.丨 的 的 5 5 5 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜 〜

"Light Dipole 40 200810540 2~Transfer transistor 2'~Transfer transistor 2"~Transfer transistor 2'"~Transfer transistor 3~Floating area 4~Overflow gate 4'~overflow gate 4"~ Overflow gate 4'"~ overflow gate 5~ storage capacitor 5'~ storage capacitor 5"~ storage capacitor 5"'~ storage capacitor 6~reset transistor 7~storage capacitor 7'~storage capacitor 7"~ Storage capacitor 7'''~ storage capacitor 8~ amplifying transistor 9~selecting transistor 10~drive line 0LO11~drive line0Τ12~drive line0S 13~drive line 0R 14~drive line 0χ 15~output line 20~ Semiconductor substrate (n-type substrate) 21 to p-type well 22, 23, 24, 25 to element isolation insulating film 41 200810540 26, 27, 28, 29 to p+ type isolation region 30 to n-type semiconductor region 31 to ρ+ type semiconductor Region 32 to n + type semiconductor region 33 to n + type semiconductor region 34 to π + type semiconductor region 35 to gate insulating film 36 to gate electrode 37 to gate insulating film 38 to gate electrode 39 to gate insulating Film 40 to gate electrode 41 to p+ type semiconductor region 42 to electricity Insulation film 42a to capacitor insulating film 43 to upper electrode 44 to insulating film 45, 46 to wiring 50 to p+ semiconductor region 51 to n-type semiconductor region 52 to n-type semiconductor region 53 to π-type semiconductor region 60 to n+ semiconductor Region 61 to n+ type semiconductor region 62 to element isolation insulating film 63 to lower electrode 64 to capacitor insulating film 65 to upper electrode 67 to lower electrode 42 200810540 68 to capacitor insulating film 69 to upper electrode 70 to n+ semiconductor region 71 to capacitor insulation Film 72 to upper electrode 73 to n+ type semiconductor region 74 to capacitor insulating film 75 to upper electrode 76 to n+ type semiconductor region 77 to capacitor insulating film 78 to upper electrode 79 to p+ type semiconductor region 80 to capacitor insulating film 81 to upper electrode 90 to p-type germanium semiconductor 90a to insulating film 91 to P-type epitaxial layer 91a to first p-type epitaxial layer 91b to second p-type epitaxial layer 92 to n+-type semiconductor region 93 to p+ type isolation region 94 to p Type germanium semiconductor layer 95~n+ type semiconductor region%~low concentration semiconductor layer 100~103~morphe array 104~column shift register 105~column shift register 106~signal/miscellaneous Reserved output circuit 107~

Claims (1)

200810540 X. Patent application scope: 1. A light sensor comprising: a light diode that receives light and generates a photocharge; an overflow gate connected to the photodiode, the photocharge of the photodiode; And storing a capacitor element during the storage operation to store the photocharge transferred by the gate. The light sensor according to claim 1 of the patent application scope, further includes: a transmission transistor connected to the light diode, the transmission transistor will be in a row; a floating region, a domain thereof . The self-material-polar body is transferred to the floating zone 3. For example, please call the optical sensor of the first item of the patent range, wherein the overflow gate is composed of a junction transistor. The semiconductor region of the gate of the transistor is connected to the germanium body and the overflow region is formed in the well region of the towel. Connected to the photodiode 4, such as the photosensor of claim 1, wherein the overflow is the predetermined depth of the substrate of the shape of the manifold overflow gate semi-conductor = the same conductivity type of the flow channel Th_g_ barrier. ^Layer F+ is low in the ^" pole breakdown (punch ^ application paste axis like side, its towel _ storage fine component package a semiconductor area ' as the lower electrode, sensor, the surface layer of the conductor substrate The medium shape=the ytterbium is formed into the light-capacitor insulating film, and is formed on the upper electrode of the semiconductor, and is formed on the capacitor insulating film. 44 200810540 6. For example, the patent scope of the application is included in the light. a sensor, wherein the storage capacitor cries a lower electrode, formed in a capacitor 70, a capacitor insulating film, and forms: an upper electrode of the substrate forming the photosensor, formed on the lower electrode, And _ 7_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a capacitor insulating film on the inner wall of the trench, in the semiconductor substrate; a middle-upper electrode, which is formed on the inner wall of the trench, and a solid-state imaging device is formed on the substrate The ditch. There are a plurality of books 9 arranged in the array of the application range, the number of the δth item of the patent application range, and the light source: the 〇S transistor or the junction transistor. The inter-temperature system is composed of: a solid-state camera device, including a book block, a domain; each of the wheels - a single-floating area, each of the plurality of elements: a light diode that receives light and generates a light-overflow gate connected to the photo-charge of the photodiode; the A-A limb (4) overflows an overflow capacitor during storage operation for storage in the capacitor element The photo-charge transmitted by the gate; and/or stored in the photodiode via the transmission transistor, connected to the photodiode, a solid-state imaging device, comprising a plurality of halogens, = between floating regions. Each of the second and the second of the patent application scope has an inlet channel transistor having a transmission semiconductor crystal layer and a buried semiconductor layer, and the channel of the transmission transistor is the same Conductive type ", A forms the transmission transistor 45 200810540 The surface or surface of the board is formed to a predetermined deep household. 12· The solid-state imaging of the first aspect of the patent application is a buried channel transistor having a type of transistor with the |= 3D transistor a semiconductor layer, the channel of the transmission transistor is formed in the vicinity of the surface or surface of the substrate of the same conductor to a predetermined, strict sound, 7 into the transmission electric crystal I3 · a solid-state imaging device, including a plurality of paintings As the patent application, the wire sensing H of the second application has a capacitance-resetting transistor, which is connected to the impurity (10), and further comprises: a device element and a signal charge in the floating region; °° or, For releasing the storage electricity - the transistor is disposed in the floating region] and the amplifying transistor for reading in the floating chamber; a selecting transistor is connected to the voltage; 1 item of solid-state camera device. a reset transistor connected to the signal of the floating element and the floating region; (10)$ to release the storage capacitor-transistor is disposed in the floating region and the storage device The crystal 'used to read the letter in the '1 乂 ' in the floating region as a voltage region, and the Japanese body is connected to the amplifying transistor. ·- A kind of solid camera device, including a number of 昼 , 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑 姑For example, in the second section of the patent, the "^ image has a -reset electric day and day body, and the connection secretary is further included: a capacitor ϊίΐ and a signal charge in the floating region for releasing the storage wafer. Between: and; the device element; the reservoir medium voltage or the floating region and 46 200810540 - reset transistor, connected to the storage capacitor element i electric grain element and the signal charge in the floating region; The storage diode is disposed in the floating region without a storage capacitor component and an amplifying transistor for reading a signal charge in the floating region 3 and the storage capacitor component. a day-to-day body connected to the A-type transistor for use in an optional camera device, comprising a plurality of elements, such as the photo sensor of the second application of the patent application scope, the solid device having the noise 2 installed Obtaining a voltage signal of the following two voltage signals, and transmitting a voltage signal to the floating area, the optical electric field of the storage capacitor, or transmitting the floating area and the set: or The floating region and the storage capacitor element The weight of the two is as follows: the solid-state noise-canceling device of the patent application scope f 1〇, the rib turns to the lion voltage 彳§, which is obtained by the transfer of the light to the floating region, 钤. ; & is still connected to the active area and the set or the floating area and the storage capacitor device, the weight of the solid object placed 19., r, the inclusion of the solid state object, including: The solid-state imaging device of the movable region and the storage capacitor element, wherein: the voltage of the reset bit j = the presence of the county moving region and the body of the capacitor element and the n-electricity The method of rotating the ^ sign 'The photo sensor comprises a photodiode +' The method comprises the following steps: storing the first photocharge 47 generated by the body before the photodiode is saturated. 200810540 will be the photodiode a second photocharge generated after the saturation is stored in the storage capacitor element; and the signal is output based on the first and second photo charges. 22. The photosensor of claim 1, wherein The overflow gate is composed of the photocharge and the reservoir The MOS transistor connected between the capacitors is formed, and the gate electrode of the MOS transistor receives a signal for determining a storage operation. 11. Fig. 48