TWI464754B - Resistance module and manufacturing method thereof - Google Patents

Description

Resistor module and method of manufacturing same

The present invention relates to a resistor module and a method of fabricating the same, and more particularly to a resistor module having a multilayer structure and a method of fabricating the same.

The conventional resistor elements are individually fixed to the substrate after being individually fabricated. However, the size of the conventional resistor is large, and the larger the number of resistive elements required for the substrate, the larger the area of the substrate is required, resulting in an oversized size of the final product. Moreover, conventional resistive elements have to be inserted or assembled into the substrate one by one, which is quite time consuming and costly.

The invention relates to a resistor module and a manufacturing method thereof. The resistor module has a plurality of resistor layers, and a plurality of resistor elements can be simultaneously provided. In addition, through the design of the multilayer resistance layer, the electrical path length of the resistor can be increased to increase the resistance value.

According to an aspect of the invention, a resistor module is provided. The resistor module includes a substrate and a plurality of resistor structures. Each of the resistor structures is formed on the substrate and includes a first resistive layer, a dielectric layer, and a second resistive layer. The first resistance layer is formed on the substrate. A dielectric layer is formed on the upper surface of the first resistive layer. The second resistive layer is formed on the dielectric layer.

According to another aspect of the present invention, a method of fabricating a resistor module is provided. The manufacturing method includes the following steps. Providing a substrate; forming a first resistive layer on the substrate, the first resistive layer defining a first contact and a second contact; forming a dielectric layer covering the upper surface of the first resistive layer, the dielectric layer having a a first opening and a second opening, the first opening exposing the first contact and the second opening exposing the second contact; and forming a second resistive layer on the dielectric layer, the second resistive layer transmitting The first opening is electrically connected to the first contact.

In order to make the above-mentioned contents of the present invention more comprehensible, the preferred embodiments are described below, and the detailed description is as follows:

First embodiment

Referring to FIG. 1, a top view of a resistor module in accordance with a first embodiment of the present invention is shown. The resistor module 100 includes a substrate 102 and a plurality of resistor structures 104. The substrate 102 is, for example, a wafer, a ruthenium oxide substrate, or a semiconductor substrate containing a plastic or resin component. The resistive structure 104 is formed on the substrate 102.

Please refer to Fig. 2, which is a cross-sectional view taken along line 2-2' in Fig. 1. The resistor structure 104 includes a first resistive layer 106, a second resistive layer 108, a first dielectric layer 110, a second dielectric layer 128, a first electrical contact 134, and a second electrical contact 136. The first resistive layer 106 is formed on the substrate 102, the first dielectric layer 110 is formed on the upper surface 124 of the first resistive layer 106, and the second resistive layer 108 is formed on the upper surface 150 of the first dielectric layer 110. After the upper layer, the first resistance layer 106 and the second resistance layer 108 constitute a two-layer structure in which the upper and lower layers overlap.

In this embodiment, the first resistance layer 106 and the second resistance layer 108 are electrically connected. Compared with the conventional single-layer resistor structure, the resistor structure 104 of the present embodiment increases the length of the resistor layer by the two-layer structure formed by the first resistor layer 106 and the second resistor layer 108, and greatly increases the resistance of the resistor structure 104. value. The number of layers of the resistive layer of the present invention is not limited to two layers. In other embodiments, the number of layers of the resistive layer of the resistor module may exceed two.

As shown in FIGS. 1 and 2, the entire second resistance layer 108 overlaps with the first resistance layer 106 via the first dielectric layer 110, so that the laying range of the resistance structure 104 is small, and the area of the substrate 102 can be saved. This is not intended to limit the invention. In one embodiment, as shown in FIG. 1 , only a portion of the second resistive layer 108 ′ of the resistive structure 104 ′ is interposed between the first dielectric layer 110 (the first dielectric layer 110 is not shown in FIG. 1 ). ) overlapping the first resistive layer 106'.

Continuing to refer to Fig. 1, although the resistive structure 104' is laid over the resistive structure 104, the width W of the second resistive layer 108' is large, and the resistance of the resistive structure 104' is reduced. Further, different resistance values can be designed by designing the length and width of the resistive layer. In general, the longer the length of the resistive layer, the larger the resistance value, and the wider the width of the resistive layer, the smaller the resistance value.

Further, as shown in FIG. 1, the range in which the plurality of second resistance layers 108 are laid substantially covers the entire upper surface 122 of the lid substrate 102, and the influence and interference of electromagnetic interference (EMI) can be reduced.

As shown in FIG. 2, the second resistance layer 108 and the first resistance layer 106 are located at different vertical height positions, that is, the second resistance layer 108 extends toward the thickness direction of the substrate 102. As a result, a larger number of resistance structures can be formed in the thickness direction of the substrate 102 under a limited substrate area. The number of the resistor structures 104 of the resistor module 100 is between about 28 and 32. However, instead of limiting the invention, the number of resistor structures 104 may exceed 32 or less.

The first dielectric layer 110 covers the upper surface 124 of the first resistive layer 106 and has a first opening 112 and a second opening 114. The upper surface 124 of the first resistive layer 106 defines a first contact 116 and a second contact. 118, the first opening 112 exposes the first contact 116, and the second opening 114 exposes the second contact 118.

The upper surface 126 of the second resistive layer 108 defines a third contact 120. One portion 108a of the second resistive layer 108 is formed in the first opening 112 and electrically connected to the first contact 116, so that the second resistive layer 108 is electrically connected. It is connected to the first resistance layer 106. The portion 108a of the second resistive layer 108 is substantially perpendicular to the first resistive layer 106.

The first contact 116, the second contact 118, and the third contact 120 are electrical contact regions defined on the surface of the resistive layer, the bonding wires, the electrical contacts, the pads, the bump metal, and the surface. A surface finish or other electrical structure may be formed on the electrical connection region.

The positions of the first contact 116, the second contact 118, and the third contact 120 determine the length of the electrical path between the second contact 118 and the third contact 120, whereby different resistance values can be designed. The positions of the first contact 116, the second contact 118, and the third contact 120 of this embodiment may be determined by actual resistance design values, and are not limited by the implementation of the present invention.

The second contact 118 and the third contact 120 can serve as positive and negative electrodes of the structure formed by the first resistive layer 106 and the second resistive layer 108. The second contact 118 and the third contact 120 can be electrically connected to an external circuit through a solder wire, such as a control module of the touch panel.

Although the position of the third contact 120 overlaps the first resistive layer 106, the third contact 120 may not overlap the first resistive layer 106. For example, in other implementations, a portion of the second resistive layer 108 may not overlap the first resistive layer 106, and the third contact 120 is defined on the portion of the second resistive layer 108, such that the third interface The position of the point 120 does not overlap the first resistive layer 106.

The second dielectric layer 128 covers the second resistance layer 108 and has a third opening 130 and a fourth opening 132. The fourth opening 132 exposes the second opening 114 and the second contact 118 , and the third opening 130 exposes the third contact 120 .

The first electrical contact 134 is formed in the third opening 130 and the third contact 120 to be electrically connected to the second resistive layer 108 for electrically contacting an external circuit. The second electrical contact 136 is formed in the second opening 114, in the fourth opening 132, and the second contact 118 to be electrically connected to the first resistive layer 106 for electrically contacting an external circuit.

The first electrical contact 134 and the second electrical contact 136 are, for example, aluminum pads, which can provide better electrical connection quality, and can also protect the second contact 118 and the third contact 120. Avoid being damaged by the environment.

Although the first electrical contact 134 and the second electrical contact 136 are exemplified by an aluminum pad, the present invention is not limited thereto. In one embodiment, the first electrical contact 134 and the second electrical contact 136 may also be Under-Bump Metallization (UBM).

Hereinafter, a method of manufacturing the resistor module of Fig. 1 will be described with reference to Fig. 3 in conjunction with Figs. 4A to 4D. FIG. 3 is a flow chart showing the manufacture of the resistor module according to the first embodiment of the present invention, and FIGS. 4A to 4D are diagrams showing the manufacturing of the resistor module of FIG. 1.

In step S102, the substrate 102 as shown in FIG. 4A is provided. The substrate 102 is defined with a plurality of (the FIG. 4A only shows a single) resistor module defining region R. The structures formed in the subsequent steps are correspondingly formed in the resistor module defining regions R. A plurality of resistor modules 100 can be cut out by performing a cutting operation along the range of the resistor module defining region R in the cutting step. Further, the manufacturing method of the resistor module of the present embodiment can manufacture a plurality of resistor modules at a time to increase the throughput, which is not intended to limit the present invention. In one embodiment, the substrate 102 can define only a single resistor module definition region R.

Then, in step S104, as shown in FIG. 4A, a plurality of first resistive layers 106 are formed on the upper surface 122 of the substrate 102, and a first contact 116 and a first surface are defined on the upper surface 124 of the first resistive layer 106. Two junctions 118.

In this step S104, a resistive material may be formed on the upper surface 122 of the substrate 102 by a sputtering method. The resistive material is then patterned using a patterning technique to form the first resistive layers 106. The resistive material is, for example, a high-resistance material such as tantalum nitride (TaN), PbTiO3, ruthenium dioxide (RuO2), nickel phosphide (NiP), nickel chrome (NiCr), and NCAlSi.

The above patterning techniques are, for example, photolithography, chemical etching, plasma etching, laser drilling, mechanical drilling, or laser cutting.

Then, in step S106, as shown in FIG. 4B, the first dielectric layer 110 is formed to cover the upper surface 124 of the first resistance layer 106. The first dielectric layer 110 has a first opening 112 and a second opening 114 . The first opening 112 exposes the first contact 116 , and the second opening 114 exposes the second contact 118 .

To clearly show the resistance structure, the 4B to 4D drawings only show a single resistance structure.

In this step S106, one of several coating techniques may be applied to form a dielectric material such as a photoresist. Such coating techniques are, for example, printing, spinning or spraying. Thereafter, the dielectric material is patterned using the patterning techniques described above to form a first dielectric layer 110 as shown in FIG. 4B.

Then, in step S108, as shown in FIG. 4C, the second resistive layer 108 is formed on the first dielectric layer 110, and the upper surface 126 of the second resistive layer 108 defines the third contact 120. The second resistance layer 108 is electrically connected to the first contact 116 of the first resistance layer 106 through the first opening 112 .

Then, in step S110, as shown in FIG. 4D, a second dielectric layer 128 is formed to cover the second resistance layer 108. The second dielectric layer 128 has a third opening 130 and a fourth opening 132. The fourth opening 132 exposes the second opening 114 and the second contact 118, and the third opening 130 exposes the third contact 120. The method of forming the second dielectric layer 128 is similar to the method of forming the first dielectric layer 110, and details are not described herein again.

Then, in step S112, the first electrical contact 134 and the second electrical contact 136 as shown in FIG. 2 are formed on the third contact 120 and the second contact, respectively, by sputtering. 118 on.

After step S112, the first dielectric layer 110, the second dielectric layer 128, and the substrate 102 are cut corresponding to the range of the resistor module defining region R of each resistor module 100 to form a plurality of images as shown in FIG. The resistor module 100.

Second embodiment

5A and 5B, FIG. 5A is a top view of the resistor module according to the second embodiment of the present invention, and FIG. 5B is a cross-sectional view of the direction 5B-5B' in FIG. 5A. The same reference numerals are used in the second embodiment in the same manner as the first embodiment, and details are not described herein again. The resistor module 200 of the second embodiment is different from the resistor module 100 of the first embodiment in that the second resistor layer 208 of the resistor structure 204 in the resistor module 200 has a fourth contact 238, which can As the positive or negative electrode of the second resistance layer 208.

As shown in FIG. 5A, the resistor module 200 includes a substrate 102 and a plurality of resistor structures 204. As shown in FIG. 5B, the resistor structure 204 is formed on the substrate 102. The resistor structure 204 includes a first resistive layer 206, a second resistive layer 208, a first dielectric layer 210, a second dielectric layer 228, a first electrical contact 234, and a second electrical contact 236. The first resistance layer 206 is formed on the substrate 102. The first dielectric layer 210 is formed on the upper surface 224 of the first resistive layer 206.

The second resistance layer 208 includes a first sub-resistive layer 208a and a second sub-resistive layer 208b. The first sub-resistive layer 208a and the second sub-resistive layer 208b are spatially isolated from each other. The first sub-resistive layer 208a is electrically connected to the first contact 216 through the first opening 212, and the second sub-resistor layer 208b is electrically connected to the second contact 218 through the second opening 214, so that the first sub-resistive layer 208a is electrically connected to the second sub resistance layer 208b.

A portion of the first sub-resistive layer 208a is formed in the first opening 212 and overlaps the first resistive layer 206, and the remaining portion is offset from the first sub-resistive layer 208a without overlapping, and the second sub-resistive layer 208b is also the same.

It can be seen from the first embodiment and the second embodiment that the orientations of the first resistive layer 206 and the second resistive layer 208 and the positions of the positive and negative electrodes have various changes, and various embodiments of the electrical path length and the resistance value can be provided. .

The upper surface 224 of the first resistive layer 206 defines a first contact 216 and a second contact 218, and the upper surface 226 of the second resistive layer 208 defines a third contact 220 and a fourth contact 238, and a third contact 220 The fourth contact 238 can serve as the positive and negative electrodes of the second resistive layer 208. The positions of the third contact 220 and the fourth contact 238 do not overlap with the first resistance layer 206.

The second dielectric layer 228 has a third opening 230 and a fourth opening 232. The third opening 230 and the fourth opening 232 respectively expose the third contact 220 and the fourth contact 238. The first electrical contact 234 and the second electrical contact 236 are respectively formed on the third contact 220 and the fourth contact 238 to be in electrical contact with an external circuit. The first electrical contact 234 and the second electrical contact 236 may be aluminum pads or bump metal. The first electrical contact 234 and the second electrical contact 236 of the embodiment are exemplified by aluminum pads. Description.

The manufacturing method of the resistor module 200 of FIG. 5A is similar to the manufacturing method of the resistor module 100 of the first embodiment, and details are not described herein again.

Third embodiment

Referring to FIG. 6, a cross-sectional view of a resistor module in accordance with a third embodiment of the present invention is shown. In the third embodiment, the same reference numerals are used for the same parts as the first embodiment, and details are not described herein again. The resistor module 300 of the third embodiment is different from the resistor module 100 of the first embodiment in that the first resistive layer 306 and the second resistive layer 308 of the resistor module 300 are spatially and electrically The upper lines are isolated from each other.

The resistor module 300 includes a substrate 102 and a plurality of resistor structures 304 (only a single resistor structure 304 is illustrated in FIG. 6). A resistor structure 304 is formed on the substrate 102. The resistor structure 304 includes a first resistive layer 306, a second resistive layer 308, a first dielectric layer 310, a second dielectric layer 328, a first electrical contact 334, a second electrical contact 336, and a third electrical Contact 344 and fourth electrical contact 346.

The first resistive layer 306 is formed on the substrate 102 and defines a first contact 316 and a second contact 318. The first dielectric layer 310 is formed on the first resistive layer 306, and the second resistive layer 308 is formed on the first dielectric. A third contact 320 and a fourth contact 338 are defined on layer 310. The third contact 320 and the fourth contact 338 of the second resistive layer 308 are electrically isolated from the first resistive layer 306. Further, the resistor structure 304 has two electrically resistive layers, which are respectively a first resistive layer 306 and a second resistive layer 308. The first contact 316 and the second contact 318 can serve as the positive and negative electrodes of the first resistive layer 306, and the third contact 320 and the fourth contact 338 can serve as the positive and negative terminals of the second resistive layer 308.

In addition, please refer to FIG. 7, which is a cross-sectional view of a resistor module in accordance with an embodiment of the present invention. The first electrical contact 434 of the resistor module 400 can be electrically connected to the third electrical contact 444 through the bonding wire 448. As a result, the first resistive layer 306 is electrically connected to the second resistive layer 308, and the first resistive layer 306 and the second resistive layer 308 are electrically connected to form a single resistor. Compared with the separated first resistive layer 306 and the second resistive layer 308, a single resistor connected by the first resistive layer 306 and the second resistive layer 308 has an electrical path increasing and an increased resistance value. Conversely, if a resistor structure having a small resistance value is to be obtained, a plurality of electrically separated resistor layers may be formed in the resistor structure in accordance with the resistor module of FIG.

Hereinafter, a method of manufacturing the resistor module of Fig. 6 will be described with reference to Fig. 3 and Fig. 8 . FIG. 8 is a schematic view showing the manufacture of the resistor module of FIG. 6. Steps S102 to S106 of manufacturing the resistor module 300 are similar to steps S102 and S106 of manufacturing the resistor module 100, and the description thereof will not be repeated here, and the following description will be made from step S108.

In step S108, as shown in FIG. 8, a second resistance layer 308 is formed on the first dielectric layer 310. The second resistance layer 308 includes a third sub-resistive layer 308a, a fourth sub-resistive layer 308b1, and a fifth sub-resistive layer 308b2. The upper surface 326 of the third sub-resistive layer 308a defines a third contact 320 and a fourth contact 338.

The fourth sub-resistive layer 308b1 is formed in the first opening 312 of the first dielectric layer 310 and on the first contact 316. The fifth sub resistance layer 308b2 is formed in the second opening 314 of the first dielectric layer 310 and the second contact 318. The fourth sub resistance layer 308b1 and the fifth sub resistance layer 308b2 are substantially perpendicular to the first resistance layer. 306.

In this step S108, the above-mentioned resistive material may be formed on the upper surface 350 of the first dielectric layer 310 by using a sputtering technique. The resistive material is then patterned using the patterning technique described above to form a third sub-resistive layer 308a, a fourth sub-resistive layer 308b1, and a fifth sub-resistive layer 308b2 that are isolated from each other.

Then, in step S110, a second dielectric layer 328 as shown in FIG. 6 is formed to cover the second resistive layer 308.

Then, in step S112, the first electrical contact 334, the second electrical contact 336, the third electrical contact 344, and the fourth electrical contact 346 are formed as shown in FIG. The contact 316, the second contact 318, the third contact 320 and the fourth contact 338 are connected. Then, corresponding to the range of the resistor module defining regions of each resistor module 300, the first dielectric layer 310, the second dielectric layer 328, and the substrate 102 are cut to form a plurality of resistors as shown in FIG. Module 300.

In addition, in another embodiment, FIG. 9 is a cross-sectional view showing a resistor module according to another embodiment of the present invention. The resistor module 500 further includes a seed layer 552. In the manufacturing method of the resistor module 500, after the step S110, the method further includes the steps of: forming the seed layer 552 on the first contact 316, the second contact 318, the third contact 320, and the fourth connection by sputtering or electroplating. The first electrical contact 534, the second electrical contact 536, the third electrical contact 544, and the fourth electrical contact 546 are formed on the seed layer 552 by electroplating to form, for example, The resistor module 500 shown in FIG. The first electrical contact 534, the second electrical contact 536, the third electrical contact 544, and the fourth electrical contact 546 are bump metal.

Fourth embodiment

Referring to FIG. 10, a cross-sectional view of a resistor module in accordance with a fourth embodiment of the present invention is shown. The same reference numerals are used in the fourth embodiment in the same manner as the third embodiment, and details are not described herein again. The resistor module 600 of the fourth embodiment is different from the resistor module 300 of the third embodiment in that the first electrical contact 634 and the second electrical contact 636 of the resistor module 600 are formed in the first A resistor layer 606.

The resistor module 600 includes a substrate 102 and a plurality of resistor structures 604 (only a single resistor structure 604 is depicted in FIG. 10). A resistor structure 604 is formed on the substrate 102. The resistor structure 604 includes a first resistive layer 606, a second resistive layer 608, a first dielectric layer 610, a second dielectric layer 628, a first electrical contact 634, a second electrical contact 636, and a third electrical Contact 644 and fourth electrical contact 646.

The first electrical contact 634 and the second electrical contact 636 are connected to the pad, and the third electrical contact 644 and the fourth electrical contact 646 are connected to the pad. Formed on the second resistance layer 608.

The first dielectric layer 610 covers a portion of the first electrical contact 634 and a portion of the second electrical contact 636. The first electrical contact 634 and the second electrical contact 636 are sandwiched between the first dielectric layer. Between the 610 and the first resistive layer 606, the first electrical contact 634 and the second electrical contact 636 are more stably formed on the first resistive layer 606.

Similar to the technical features of the first dielectric layer 610, the second dielectric layer 628 covers a portion of the third electrical contact 644 and a portion of the fourth electrical contact 646, the third electrical contact 644 and the fourth electrical The contact 646 is disposed between the second resistive layer 608 and the second dielectric layer 628 to form the third electrical contact 644 and the fourth electrical contact 646 more firmly on the second resistive layer 608.

The manufacturing diagram of the resistor module of Fig. 10 will be described below with reference to Fig. 11 and with reference to Figs. 12A to 12D. 11 is a flow chart showing the manufacture of a resistor module according to a fourth embodiment of the present invention, and FIGS. 12A to 12D are diagrams showing the manufacture of the resistor module of FIG. Steps S602 and S604 of FIG. 11 are similar to steps S102 and S104 of FIG. 3, and the description thereof will not be repeated here, and the following description will be made from step S606.

In step S606, as shown in FIG. 12A, the first electrical contact 634 and the second electrical contact 636 are formed on the first contact 616 and the second contact 618 of the first resistive layer 606. The first contact 616 and the second contact 618 are defined on the upper surface 624 of the first resistive layer 606.

Then, in step S608, as shown in FIG. 12B, the first dielectric layer 610 is formed to cover the first resistive layer 606, a portion of the first electrical contact 634, and a portion of the second electrical contact 636. The first dielectric layer 610 has a first opening 612 and a second opening 614 respectively exposing the first electrical contact 634 and the second electrical contact 636.

Then, in step S610, as shown in FIG. 12C, a second resistance layer 608 is formed on the upper surface 650 of the first dielectric layer 610. The upper surface 626 of the second resistive layer 608 defines a third contact 620 and a fourth contact 638, and the second resistive layer 608 is electrically separated from the first resistive layer 606.

Then, in step S612, as shown in FIG. 12D, the third electrical contact 644 and the fourth electrical contact 646 are formed on the third contact 620 and the fourth contact 638 of the second resistive layer 608.

Then, in step S614, a portion of the third electrical contact 644, a portion of the fourth electrical contact 646, and a second resistive layer 608 are formed by the second dielectric layer 628 as shown in FIG. The second dielectric layer 628 has a third opening 630 and a fourth opening 632 respectively exposing the third electrical contact 644 and the fourth electrical contact 646. So far, the resistor module 600 of FIG. 10 is formed.

In addition, in another embodiment, please refer to FIG. 13 , which illustrates a cross-sectional view of a resistor module in accordance with other embodiments of the present invention. The resistor module 700 further includes a seed layer 752, a first bump metal 754, a second bump metal 756, a third bump metal 758, and a fourth bump metal 760, as compared to the resistor module 600. Hereinafter, a method of manufacturing the resistor module 700 will be described with reference to FIG. After the step S612, the manufacturing method of the resistor module 700 further includes: forming a seed layer 752 on the first electrical contact 634, the second electrical contact 636, and the third electrical contact 644 by sputtering or electroplating. And the fourth electrical contact 646. Then, a first bump metal 754, a second bump metal 756, a third bump metal 758, and a fourth bump metal 760 are formed on the seed layer 752 to form the resistor module 700 as shown in FIG. .

The resistor module and the manufacturing method thereof disclosed in the above embodiments of the present invention have a plurality of features, and some of the features are as follows:

(1) The second resistance layer and the first resistance layer are located at different vertical height positions, that is, the second resistance layer can extend toward the thickness direction of the substrate. As a result, a larger number of resistor structures can be formed with a limited substrate area.

(2) The range in which the plurality of first resistance layers and the plurality of second resistance layers are laid substantially covers the upper surface of the cover substrate, and has an effect of reducing EMI interference.

(3) The first resistance layer can be electrically connected or electrically separated from the second resistance layer, and the actual application depends on the visual design requirements. If the first resistance layer and the second resistance layer are electrically connected, the length of the electrical path can be increased to increase the resistance value; if the first resistance layer and the second resistance layer are electrically separated, the number of resistors can be increased.

(4). The resistor module is completed by semiconductor technology, which greatly reduces the volume of the final resistor module.

In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

100, 200, 300, 400, 500, 600, 700. . . Resistor module

102. . . Substrate

104, 104', 204, 304, 604. . . Resistance structure

106, 106', 206, 306, 606. . . First resistance layer

108, 108', 208, 308, 608. . . Second resistance layer

110, 210, 310, 610. . . First dielectric layer

112, 212, 312, 612. . . First opening

114, 214, 314, 614. . . Second opening

116, 216, 316, 616. . . First contact

118, 218, 318, 618. . . Second contact

120, 220, 320, 620. . . Third junction

122, 124, 126, 150, 224, 226, 326, 350, 624, 626, 650. . . Upper surface

128, 228, 628. . . Second dielectric layer

130, 230, 630. . . Third opening

132, 232, 632. . . Fourth opening

134, 234, 334, 434, 534, 634. . . First electrical contact

136, 236, 336, 536, 636. . . Second electrical contact

238, 338, 638. . . Fourth junction

208a. . . First sub-resistive layer

208b. . . Second sub-resist layer

308a. . . Third sub-resist layer

308b1. . . Fourth sub-resist layer

308b2. . . Fifth sub-resistance layer

344, 444, 544, 644. . . Third electrical contact

346, 546, 646. . . Fourth electrical contact

448. . . Welding wire

552, 752. . . Seed layer

754. . . First bump metal

756. . . Second bump metal

758. . . Third bump metal

760. . . Fourth bump metal

108a. . . portion

R. . . Resistor module definition area

S102-S112, S602-614. . . step

W. . . width

1 is a top view of a resistor module in accordance with a first embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the direction 2-2' in Fig. 1.

FIG. 3 is a flow chart showing the manufacture of the resistor module in accordance with the first embodiment of the present invention.

4A to 4D are schematic views showing the manufacture of the resistor module of Fig. 1.

FIG. 5A is a top view of a resistor module in accordance with a second embodiment of the present invention.

Fig. 5B is a cross-sectional view showing the direction 5B-5B' in Fig. 5A.

Figure 6 is a cross-sectional view showing a resistor module in accordance with a third embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a resistor module in accordance with an embodiment of the present invention.

FIG. 8 is a schematic view showing the manufacture of the resistor module of FIG. 6.

FIG. 9 is a cross-sectional view showing a resistor module in accordance with another embodiment of the present invention.

Figure 10 is a cross-sectional view showing a resistor module in accordance with a fourth embodiment of the present invention.

11 is a flow chart showing the manufacture of a resistor module in accordance with a fourth embodiment of the present invention.

12A to 12D are schematic views showing the manufacture of the resistor module of Fig. 10.

Figure 13 is a cross-sectional view showing a resistor module in accordance with other embodiments of the present invention.

100. . . Resistor module

102. . . Substrate

104, 104’. . . Resistance structure

106, 106’. . . First resistance layer

108, 108’. . . Second resistance layer

W. . . width

Claims (18)

A resistor module includes: a substrate; and a plurality of resistor structures formed on the substrate, each of the resistor structures including: a first resistor layer formed on the substrate; a dielectric layer formed on the substrate a surface of the upper surface of the resistor layer; and a second resistor layer formed on the dielectric layer. The resistor module of claim 1, wherein the first resistance layer is electrically connected to the second resistance layer. The resistor module of claim 2, wherein the dielectric layer has a first opening and a second opening, the first resistance layer defining a first contact and a second contact The first opening exposes the first contact and the second opening exposes the second contact, and the second resistive layer is electrically connected to the first contact through the first opening. The resistor module of claim 3, wherein the second resistor layer comprises a first sub-resistive layer and a second sub-resistive layer, the first sub-resistive layer and the second sub-resistive layer are connected to each other The first sub-resistive layer is electrically connected to the first contact through the first opening, and the second sub-resistive layer is electrically connected to the second contact through the second opening. The resistor module of claim 3, wherein the second resistor layer further defines a third contact, each of the resistor structures further includes: an electrical contact formed on the first Three contacts. The resistor module of claim 5, wherein the electrical contact is an Under-Bump Metallization (UBM) or an aluminum pad. The resistor module of claim 5, wherein each of the resistor structures further comprises: a seed layer formed on the electrical contact; and a bump metal formed on the seed On the floor. The resistor module of claim 5, wherein each of the resistor structures further comprises: a sub-layer formed between the electrical contact and the second resistive layer. The resistor module of claim 1, wherein at least a portion of the second resistive layer overlaps the first resistive layer via the dielectric layer. The resistor module of claim 1, wherein the second resistor layer further defines a third contact and a fourth contact, the third contact and the fourth contact and the first The resistive layer is electrically isolated. The resistor module of claim 10, wherein each of the resistor structures further comprises: a solder wire electrically connected to the first contact and the third contact. The resistor module of claim 1, wherein the first resistive layer and the first resistive layer are made of tantalum nitride (TaN), PbTiO3, ruthenium dioxide (RuO2), and nickel phosphide ( At least one of NiP), nickel chromium (NiCr) and NCAlSi. A method for manufacturing a resistor module, comprising: providing a substrate; forming a first resistor layer on the substrate, the first resistor layer defining a first contact and a second contact; forming a dielectric layer covering The first resistive layer has a first opening and a second opening, the first opening exposing the first contact and the second opening exposing the second contact; And forming a second resistor layer on the dielectric layer, the second resistor layer being electrically connected to the first contact through the first opening. The manufacturing method of claim 13, wherein in the step of forming the second resistive layer, the second resistive layer comprises a first sub-resistive layer and a second sub-resistive layer, the first sub- The second sub-resistive layer is electrically connected to the first sub-resistor layer, and the first sub-resistive layer is electrically connected to the first contact through the first opening, and the second sub-resistive layer passes through the second opening Electrically connected to the second contact. The manufacturing method of claim 13, wherein in the step of forming the second resistive layer, the second resistive layer further defines a third contact, further comprising: forming an electrical contact On the third junction. The manufacturing method of claim 15, further comprising: forming a sub-layer on the electrical contact; and forming a bump metal on the seed layer. The manufacturing method of claim 15, wherein the electrical contact is a bump metal or an aluminum pad. The manufacturing method of claim 13, wherein the second resistance layer further defines a third contact, the manufacturing method further comprising: forming a sub-layer on the third contact; and forming an electrical The contacts are on the seed layer.