TWI464221B - 鎵調配油墨及其製造及使用方法 - Google Patents

鎵調配油墨及其製造及使用方法 Download PDF

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Publication number
TWI464221B
TWI464221B TW101105027A TW101105027A TWI464221B TW I464221 B TWI464221 B TW I464221B TW 101105027 A TW101105027 A TW 101105027A TW 101105027 A TW101105027 A TW 101105027A TW I464221 B TWI464221 B TW I464221B
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TW
Taiwan
Prior art keywords
group
gallium
component
liquid carrier
alkyl
Prior art date
Application number
TW101105027A
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English (en)
Chinese (zh)
Other versions
TW201239043A (en
Inventor
大衛 莫斯里
大衛 陀森
Original Assignee
羅門哈斯電子材料有限公司
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Publication date
Application filed by 羅門哈斯電子材料有限公司 filed Critical 羅門哈斯電子材料有限公司
Publication of TW201239043A publication Critical patent/TW201239043A/zh
Application granted granted Critical
Publication of TWI464221B publication Critical patent/TWI464221B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
TW101105027A 2011-02-18 2012-02-16 鎵調配油墨及其製造及使用方法 TWI464221B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/030,175 US8343267B2 (en) 2011-02-18 2011-02-18 Gallium formulated ink and methods of making and using same

Publications (2)

Publication Number Publication Date
TW201239043A TW201239043A (en) 2012-10-01
TWI464221B true TWI464221B (zh) 2014-12-11

Family

ID=46605120

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101105027A TWI464221B (zh) 2011-02-18 2012-02-16 鎵調配油墨及其製造及使用方法

Country Status (7)

Country Link
US (2) US8343267B2 (OSRAM)
JP (1) JP5902502B2 (OSRAM)
KR (1) KR101889765B1 (OSRAM)
CN (1) CN102702841B (OSRAM)
DE (1) DE102012003206A1 (OSRAM)
FR (1) FR2971787A1 (OSRAM)
TW (1) TWI464221B (OSRAM)

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* Cited by examiner, † Cited by third party
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WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same
US9105797B2 (en) * 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
JP6080573B2 (ja) * 2013-01-31 2017-02-15 キヤノン株式会社 電子写真感光体、プロセスカートリッジおよび電子写真装置
CN110518084B (zh) * 2019-08-06 2021-03-05 苏州腾晖光伏技术有限公司 一种镓局域掺杂的perc电池及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
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US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
TW201224071A (en) * 2010-09-30 2012-06-16 Rohm & Haas Elect Mat A selenium/Group 1b/Group 3a ink and methods of making and using same

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WO1993004212A1 (en) 1991-08-26 1993-03-04 Eastman Kodak Company Preparation of group iii element-group vi element compound films
GB9315771D0 (en) 1993-07-30 1993-09-15 Epichem Ltd Method of depositing thin metal films
GB9711799D0 (en) 1997-06-07 1997-08-06 Vecht Aron Preparation of sulphides and selenides
US7524528B2 (en) 2001-10-05 2009-04-28 Cabot Corporation Precursor compositions and methods for the deposition of passive electrical components on a substrate
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US7494841B2 (en) 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US8071419B2 (en) 2006-06-12 2011-12-06 Nanosolar, Inc. Thin-film devices formed from solid particles
US8057850B2 (en) 2006-11-09 2011-11-15 Alliance For Sustainable Energy, Llc Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
US8876971B2 (en) 2006-11-09 2014-11-04 Alliance For Sustainable Energy, Llc Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
US20080280030A1 (en) 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
KR101497633B1 (ko) * 2007-04-18 2015-03-03 나노코 테크놀로지스 리미티드 멀티층을 기본으로 전기적인 활성 박막을 제조
AU2008337899B2 (en) * 2007-12-19 2013-10-31 Merck Patent Gmbh Optically variable pigments of high electrical conductivity
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
CN101870458B (zh) * 2009-04-22 2012-05-09 钟润文 多元金属硫族元素化合物和靶材及涂层材料的制备方法
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
US8372485B2 (en) * 2011-02-18 2013-02-12 Rohm And Haas Electronic Materials Llc Gallium ink and methods of making and using same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
TW201224071A (en) * 2010-09-30 2012-06-16 Rohm & Haas Elect Mat A selenium/Group 1b/Group 3a ink and methods of making and using same

Also Published As

Publication number Publication date
US20130078384A1 (en) 2013-03-28
US8343267B2 (en) 2013-01-01
US9080068B2 (en) 2015-07-14
KR20120103446A (ko) 2012-09-19
DE102012003206A1 (de) 2012-08-23
TW201239043A (en) 2012-10-01
KR101889765B1 (ko) 2018-08-20
CN102702841B (zh) 2015-01-14
JP2012172150A (ja) 2012-09-10
JP5902502B2 (ja) 2016-04-13
CN102702841A (zh) 2012-10-03
FR2971787A1 (fr) 2012-08-24
US20120213924A1 (en) 2012-08-23

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