TWI461768B - 光纖製作方法及其光纖 - Google Patents
光纖製作方法及其光纖 Download PDFInfo
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Description
本發明係關於一種光纖製作方法及其光纖,特別是一種內層包覆有電極之光纖製作方法及具電極之光纖。
傳統光纖於通訊、感測及光電領域獨具鰲頭,近年來更以光纖陀螺儀廣為手機、導航、飛行等方面所用,以藉助具電極之光纖傳遞訊號及光能而達到相位調節之功用。
然而,傳統光纖製作內包覆電極時,往往必須於石英玻璃所製之預形體中鑽鑿複數孔洞,以借助孔洞分別灌注正、負電極及相同於預形體材質之纖核,方可再採用一般光纖抽絲方式加熱該預形體一端至高溫熔融,以對熔融處施力抽絲成形所謂之光纖;亦或者,於石英玻璃所製之預形體中鑽鑿複數孔洞,並於其一孔洞灌注相同於預形體材質之纖核後,方以一般光纖抽絲方式加熱該預形體一端至高溫熔融而抽絲成具孔洞之光纖,再將形成正、負電極之電極材料加熱灌注於其中,而完成具電極光纖之製作。
基於前述作用,雖可致使傳統光纖內包覆有電極,但當以此方法適用於晶體材料為纖核之光纖製作時,多半會因該預形體受熱溫度高達1800℃以上,而導致正、負電極及晶體纖核於抽絲過程隨之熔融,甚至相互摻融於一塊,以致成形光纖後所內包覆之正、負電極及晶體纖核完整性不足;是以,傳統光纖之製法非但無法適用於晶體光纖而於其內層確實包覆有電極及晶體纖核,更可能因過分高溫
加熱而導致晶體纖核徹底熔融,以致失去其既有作用。此外,無論是傳統光纖或晶體光纖之製作,通常為了使正、負電極及纖核能相互匹配於該預形體之孔洞內,勢必對於鑽鑿該預形體之複數孔洞時具有極高的精度要求,也就此加劇製作過程之繁瑣,而相對降低傳統製法之效率。
另一方面,由於傳統製法需經高溫處理而始終無法為晶體光纖所適用,以致藉助晶體為元件材料時,其體積仍受限於傳統波導元件之大小而無法以晶體光纖取代之,終究對於現階段的商品走向輕薄化構成極大阻礙。
有鑑於此,確實有必要發展一種可廣為適用於晶體光纖之光纖製作方法,以將正、負電極內包覆於光纖,並同時解決如上所述之各種問題。
本發明主要目的乃改善上述缺點,以提供一種光纖製作方法,其係能夠適用於晶體光纖,以省去預形體及鑽孔的製作且藉簡化製程而內包覆正、負電極者。
本發明次一目的係提供一種光纖製作方法,其係能夠簡化製程工序,以相對提升光纖製作效率者。
本發明再一目的係提供一種光纖,其係能夠具有完整之正、負電極及纖核,以維持光纖既有特性者。
為達到前述發明目的,本發明之光纖製作方法,係包含:加熱一晶體材料之其中一端至其熔融,而形成一熔融端,並對該熔融端作抽絲而拉出晶纖;沿該晶纖之軸向方向將該晶纖外周面劃分成一第一表層及一第二表層,以將
導電塗料分別附著於該第一表層及第二表層而形成不相互連接的正、負內電極;將附著有正、負內電極之晶纖套入一耐熱管內,加熱該耐熱管直至該晶纖外層受熱軟化而貼附於該耐熱管內周壁,且使該晶纖中心維持為一固形核心層;再將導電塗料分別披覆於該晶纖二端,以形成個別與正、負內電極相互電連接的正、負外電極。
本發明光纖製作方法還可以於該晶纖套入該耐熱管後,選擇於該耐熱管外另套上一集熱管,且該耐熱管可相對該集熱管之軸向方向移動,並使熱源集中於該集熱管,以供熱予該耐熱管。
其中,以雷射所發散之光通過一斜向反光鏡、一聚光鏡而集中於該集熱管。且該集熱管係為藍寶石套管。
其中,該晶纖係放置於一V型槽內,並以真空蒸鍍方式為該晶纖表面鍍上該導電塗料,而於該第一表層及第二表層分別形成正、負內電極。
其中,該熔融端係以雷射光加熱該晶體材料之其中一端至其熔融而形成。
其中,該晶體材料為鈮酸鋰、摻鈦鈮酸鋰、鍶鋇鈮或鈦酸鋇;該導電塗料為銦錫氧化物、摻氟氧化錫或摻鋁氧化鋅等耐高溫導電材料;該耐熱管由二氧化矽所製成。
為達到前述發明目的,本發明還提供一種光纖,係包含:一晶體光纖,具有一耐熱管及一晶纖,該晶纖套設於該耐熱管內,該晶纖外周面與該耐熱管內壁共同夾設有不相連接的一正極內電極及負極內電極,且該晶纖中心還包覆有一固形核心層;一正極外電極,設於該晶體光纖一端,
並與該正極內電極相連接;及一負極外電極,設於該晶體光纖另一端,並與該負極內電極相連接。
其中,前述之耐熱管係為二氧化矽套管。
為讓本發明之上述及其他目的、特徵及優點能更明顯易懂,下文特舉本發明之較佳實施例,並配合所附圖式,作詳細說明如下:本發明光纖製作方法較佳係適用於晶體光纖,以突破傳統製法之限制,但仍不以此為限。是以,儘管本發明詳述技術內容是以「晶體光纖」為主要實施對象,但本領域技術人員亦可基於相同技術概念加以轉用,實屬合宜。
所謂「晶體光纖」係泛指材料分子以單一方式排列之晶體為材料所構成者,其有別於傳統光纖,係因部分材料特性須於單晶態下才可維持,此乃本領域人員之通常知識,不再多作解釋。
該光纖製作方法係包含以下步驟:如第1a及1b圖所示,加熱一晶體材料1至其端部11熔融,並對該熔融端部11作抽絲而拉出晶纖S。詳言之,該晶體材料係泛指鈮酸鋰、摻鈦鈮酸鋰、鍶鋇鈮、鈦酸鋇....等固態材料,本發明則係藉助鈮酸鋰(lithium niobate,LiNbO3
)為晶體材料1,以由雷射加熱提拉法(laser heated pedestal growth,LHPG)抽絲成該晶纖S,此為本領域常用技術手段,容不詳加贅述,僅配合圖面簡單示意裝置舉例說明之。
以本實施例所抽絲之鈮酸鋰為例,係選擇先以直徑約500μm之鈮酸鋰晶棒〔即晶體材料1,以下簡稱〝晶棒1〞〕穿設第1a圖圖面所示的一斜向反光鏡2並予以固定,且對應該斜向反光鏡2放置有一聚光鏡3,該聚光鏡3特別如圖面所示以其聚光面31朝向該晶棒1之端部11;如此,導引雷射光發散至該斜向反光鏡2並反射雷射光至該聚光鏡3,以通過該聚光鏡3之聚光面31將雷射光能集中於該晶棒1之端部11,並持續以功率約12瓦之雷射光作用,直至該晶棒1之端部11受熱熔融;此時,由另一鈮酸鋰晶棒〔簡稱〝晶棒1’〞〕沾附該晶棒1熔融之端部11,並控制該二晶棒1、1’的相對移動速率,以致使該二晶棒1、1’沿第1b圖圖面所示之箭頭方向緩慢抽拉,並在該二晶棒1、1’相對遠離且相接於該二晶棒1、1’尾端之熔融晶體材料因冷卻斷離後,方能抽絲出該晶纖S。
基於上述概念,係可以因應不同之晶纖S尺寸,而選擇操作不同之晶棒1、1’移動速率。例如,控制該晶棒1之移動速率為0.5mm/min,另一晶棒1’之移動速率為2mm/min〔即二晶棒1、1’的相對移動速率比為1:4〕,以抽絲出直徑約300μm之晶纖S;或者,控制該晶棒1之移動速率為0.1mm/min,另一晶棒1’之移動速率為2mm/min〔即二晶棒1、1’的相對移動速率比為1:20〕,以抽絲出直徑約70μm之晶纖S。
以上,所屬技術領域中具有通常知識者理當可基於相同技術手段且因應所需,進而更替〝晶纖S〞種類為實施對象,並以控制抽絲時的相對移動速率而能獲得所需尺寸
之晶纖S為原則,不在此加以設限及重複贅述。
待所需晶纖S製備完成後,接著再如第2圖所示,沿該晶纖S之軸向方向將該晶纖S劃分成不相互連接的一第一表層S1及一第二表層S2,以將導電塗料P分別披覆於該第一表層S1及第二表層S2,而可於該晶纖S外周面形成正、負內電極。詳言之,本實施例係選擇將該晶纖S放置於如圖面所示之V型槽4內,該V型槽4特別為玻璃所製,並以真空蒸鍍方式(vacuum evaporation desposition)為該晶纖S表面鍍上該導電塗料P。其中,該導電塗料P可選擇為銦錫氧化物(Indium Tin Oxide,ITO)、摻氟氧化錫(Fluorine-doped Tin Oxide,FTO)、摻鋁氧化鋅(Al-doped Zinc Oxide,AZO)等耐高溫且具導電作用之氧化物。
舉例而言,本實施例係如第2a圖所示將直徑約70μm之晶纖S橫置於該V型槽4,並於其一端部貼附真空膠帶;如此,該晶纖S裸露於該V型槽4外之部份即為第一表層S1,置於該V型槽4內之部份則為第二表層S2。續如第2b圖所示,針對該第一表層S1以真空蒸鍍方式作用,迫使銦錫氧化物〔即導電塗料P〕受熱汽化為銦錫蒸氣而完整附著於該第一表層S1,且於該第一表層S1表面形成一內電極〔稱之正極內電極P1〕;隨之如第2c圖所示翻轉該晶纖S,以使該第二表層S2裸露於該V型槽4外,並重複藉真空蒸鍍方式作用,以於銦錫蒸氣附著該第二表層S2之表面而形成另一內電極〔稱之負極內電極P2〕。其中,該正、負內電極P1、P2之厚度較佳約略為300nm。
以上,除可藉由真空蒸鍍方式於該晶纖S表面鍍上導
電塗料P之外,所屬技術領域中具有通常知識者亦能在相同概念下,視實際情況選擇以直流反應式磁控濺鍍法(DC reactive magnetron sputtering)、射頻反應式磁控濺鍍法(RF reactive magnetron sputtering)、化學氣相沉積法(chemical vapor desposition,CVD)等各式成膜手段,以確保該導電塗料P穩固附著於該晶纖S表面即可,不多加限制之。
待該晶纖S表面鍍覆有正、負內電極〔即正極內電極P1及負極內電極P2〕後,遂如第3圖所示,將環覆有正、負內電極P1、P2之晶纖S套入一耐熱管5內,加熱該耐熱管5直至該晶纖S外層受熱軟化而貼附於該耐熱管5內周壁,且維持該晶纖S中心為一固形核心層S3。詳言之,本實施例之耐熱管5係選擇由二氧化矽製成〔即所謂石英管〕,較佳係限制該耐熱管5之內徑為75μm、外徑為150μm,以匹配該晶纖S穿套為原則,藉此確保該耐熱管5吸收之熱能可均佈於該晶纖S外表面,進而於該晶纖S表層軟化時仍能維持內層為固形之核心層S3〔參見第4圖〕。
特別地,本發明還可於該耐熱管5外套上一集熱管6,以藉該集熱管6包覆該耐熱管5之部分,且該集熱管6可選擇由藍寶石(sapphire)構成,以藉藍寶石的聚焦效果均勻供熱;且該集熱管6亦可視需求選擇適當尺寸,本實施例較佳係以藍寶石構成且內徑為480μm、外徑為1200μm及長度為3mm之集熱管6供該耐熱管5穿套,以使該耐熱管5可相對該集熱管6之軸向方向移動為主。
舉例而言,本實施例係以相仿雷射加熱提拉法之裝置〔詳閱第3圖所示〕,再次使雷射所發散之光通過該斜向
反光鏡2、聚光鏡3而集中於該集熱管6,並持續操作該耐熱管5以1 mm/min之速度緩慢通過該集熱管6,直至該晶纖S外表面均勻受熱而導致其表層軟化;如此,軟化之晶纖S表層便會熔融而附著於該耐熱管5內壁,並同時將該正、負內電極P1、P2加以包覆,較佳係控制雷射功率為45瓦,以確保該晶纖S內層不致軟化而可維持固形核心層S3〔參見第4圖〕,藉此完成晶體光纖S’之製作。
以上,透過雷射光加熱之手段乃本領域公知常識,且已於最初之晶纖成型過程詳細說明,容不再此贅述。
藉由上述步驟製成該晶體光纖S’之後,僅需再如第4圖所示,將該導電塗料P分別披覆於該晶體光纖S’二端,以形成個別與正、負內電極P1、P2相互電連接的正、負外電極P1’、P2’。詳言之,本實施例同樣選擇以銦錫氧化物為該導電塗料P,且藉真空蒸鍍方式包覆於該晶體光纖S’二端,分別形成與該正極內電極P1相連接之正極外電極P1’,以及與該負極內電極P2相連接之負極外電極P2’,且該正、負外電極P1’、P2’之厚度較佳約略為300 nm;如此遂可完成如第4圖所示之具電極之光纖。
綜上所述,本發明光纖製作方法之主要特徵在於:藉由晶纖外包覆有正、負內電極,並通過雷射加熱致使該晶纖表層軟化而黏附於該耐熱管內壁,且控制雷射功率不致使該晶纖內層熔融而能維持固形核心層之態樣,藉此即能完成晶體光纖之製作,並在該晶體光纖外二端鍍上可與正、負內電極相互連接之正、負外電極,以據此完成本發明之光纖而作為光電光纖所用,以導通電流訊號。如此,
藉由本發明光纖製作方法不僅能夠適用於晶體光纖之製作,更可以省去傳統光纖製備預形體,並於該預形體內鑽孔之繁複,以藉簡化之製程工序,達到完整內包覆正、負電極,而可相對提升光纖製作效率之功效。
並且,藉由本發明光纖製作方法所製成之光纖係由第4圖所示的一晶體光纖S’包覆正、負外電極P1’、P2’所構成,該正、負外電極P1’、P2’係形成於該晶體光纖S’相對二端。該晶體光纖S’包含一耐熱管5及一晶纖S,該晶纖S套設於該耐熱管5內,且沿該晶纖S之軸向方向將其外周面區分為一第一表層S1及一第二表層S2,該第一表層S1係與該耐熱管5內壁夾設有一正極內電極P1,該正極內電極P1遂與該正極外電極P1’相連接,該第二表層S2則與該耐熱管內壁夾設有一負極內電極P2,該負極內電極P2係與該負極外電極P2’相連接,且該正、負內電極P1、P2並未相互連接;另外,該晶纖S中心還包覆有一固形核心層S3。如此,經本發明所製成之光纖係能夠具有完整之正、負電極及纖核,而不致在光纖的成型過程因高溫而造成電極與纖核摻融於一塊,以確保光纖產出之品質且使光纖具有較佳導通電流、訊號等之功效。
雖然本發明已利用上述較佳實施例揭示,然其並非用以限定本發明,任何熟習此技藝者在不脫離本發明之精神和範圍之內,相對上述實施例進行各種更動與修改仍屬本發明所保護之技術範疇,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
〔本發明〕
1、1’‧‧‧晶體材料(晶棒)
11‧‧‧端部
2‧‧‧斜向反光鏡
3‧‧‧聚光鏡
31‧‧‧聚光面
4‧‧‧V型玻璃槽
5‧‧‧耐熱管
6‧‧‧集熱管
S‧‧‧晶纖
S1‧‧‧第一表層
S2‧‧‧第二表層
S3‧‧‧固形核心層
S’‧‧‧晶體光纖
P‧‧‧導電塗料
P1‧‧‧正極內電極
P2‧‧‧負極內電極
P1’‧‧‧正極外電極
P2’‧‧‧負極外電極
第1a~1b圖:本發明光纖製作方法之製作示意圖一。
第2a~2d圖:本發明光纖製作方法之製作示意圖二。
第3圖:本發明光纖製作方法之製作示意圖三。
第4圖:本發明光纖製作方法之成品示意圖。
S‧‧‧晶纖
S3‧‧‧固形核心層
S’‧‧‧晶體光纖
P1‧‧‧正極內電極
P2‧‧‧負極內電極
P1’‧‧‧正極外電極
P2’‧‧‧負極外電極
5‧‧‧耐熱管
Claims (11)
- 一種光纖製作方法,係包含:加熱一晶體材料之其中一端至其熔融,而形成一熔融端,並對該熔融端作抽絲而拉出晶纖;沿該晶纖之軸向方向將該晶纖外周面劃分成一第一表層及一第二表層,以將導電塗料分別附著於該第一表層及第二表層而形成不相互連接的正、負內電極;將附著有正、負內電極之晶纖套入一耐熱管內,加熱該耐熱管直至該晶纖外層受熱軟化而貼附於該耐熱管內周壁,且使該晶纖中心維持為一固形核心層;將導電塗料分別附著於該耐熱管二端,以形成個別與正、負內電極相互電連接的正、負外電極。
- 如申請專利範圍第1項所述之光纖製作方法,於該晶纖套入該耐熱管後,該耐熱管外還另套上一集熱管,且該耐熱管可相對該集熱管之軸向方向移動,並使熱源集中於該集熱管,以供熱予該耐熱管。
- 如申請專利範圍第2項所述之光纖製作方法,其中,以雷射所發散之光通過一斜向反光鏡、一聚光鏡而集中於該集熱管。
- 如申請專利範圍第2或3項所述之光纖製作方法,其中,該集熱管係為藍寶石套管。
- 如申請專利範圍第1、2或3項所述之光纖製作方法,其中,該晶纖係放置於一V型槽內,並以真空蒸鍍方式為該晶纖表面鍍上該導電塗料,而於該第一表層及第 二表層分別形成正、負內電極。
- 如申請專利範圍第1、2或3項所述之光纖製作方法,其中,該熔融端係以雷射光加熱該晶體材料之其中一端至其熔融而形成。
- 如申請專利範圍第1、2或3項所述之光纖製作方法,其中,該晶體材料係為鈮酸鋰、摻鈦鈮酸鋰、鍶鋇鈮或鈦酸鋇。
- 如申請專利範圍第1、2或3項所述之光纖製作方法,其中,該導電塗料係為銦錫氧化物、摻氟氧化錫或摻鋁氧化鋅。
- 如申請專利範圍第1、2或3項所述之光纖製作方法,其中,該耐熱管係由二氧化矽所製成。
- 一種光纖,係包含:一晶體光纖,具有一耐熱管及一晶纖,該晶纖套設於該耐熱管內,該晶纖外周面與該耐熱管內壁共同夾設有不相連接的一正極內電極及負極內電極,且該晶纖中心還包覆有一固形核心層;一正極外電極,設於該晶體光纖一端,並與該正極內電極相連接;及一負極外電極,設於該晶體光纖另一端,並與該負極內電極相連接。
- 如申請專利範圍第10項所述之光纖,其中,該耐熱管係為二氧化矽套管。
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US7317847B1 (en) * | 2006-10-20 | 2008-01-08 | Kvh Industries, Inc. | Optical fibers, devices and methods for making same |
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2012
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CN100378477C (zh) * | 2005-09-29 | 2008-04-02 | 武汉理工大学 | 一种具有导电性能的光子晶体光纤及其制备方法 |
TWI318305B (zh) * | 2006-08-25 | 2009-12-11 | Univ Nat Sun Yat Sen | |
US20120267820A1 (en) * | 2011-02-17 | 2012-10-25 | Massachusetts Institute Of Technology | Fiber draw synthesis |
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US9079793B2 (en) | 2015-07-14 |
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